TWI382284B - Photoresist coating process - Google Patents
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Description
本發明是有關於一種半導體製程，且特別是有關於一種光阻塗佈製程。This invention relates to a semiconductor process and, more particularly, to a photoresist coating process.
一般而言，半導體元件的製造流程相當複雜，包括薄膜沈積、微影、蝕刻、離子植入及熱製程等步驟。其中，微影(Photolithography)製程可以說是整個半導體製程中，最舉足輕重的步驟之一。微影製程主要由光阻塗佈、曝光以及顯影三大步驟所構成。In general, the manufacturing process of semiconductor components is quite complicated, including steps of thin film deposition, lithography, etching, ion implantation, and thermal processing. Among them, the photolithography process can be said to be one of the most important steps in the entire semiconductor process. The lithography process is mainly composed of three steps of photoresist coating, exposure and development.
習知光阻塗佈製程主要包括三個部分。首先，將晶圓置放在旋轉器(spinner)的平台上，高速旋轉晶圓一段時間，以去除晶圓表面的灰塵。然後，提供光阻材料於晶圓表面，並藉由控制晶圓的轉速，使光阻材料均勻地塗佈在晶圓上，以形成光阻層。而後，停止提供光阻材料，之後，藉由控制晶圓的轉速，調整光阻層的厚度。The conventional photoresist coating process mainly includes three parts. First, the wafer is placed on a spinner platform and the wafer is rotated at high speed for a period of time to remove dust from the wafer surface. Then, a photoresist material is provided on the surface of the wafer, and the photoresist material is uniformly coated on the wafer by controlling the rotation speed of the wafer to form a photoresist layer. Then, the supply of the photoresist material is stopped, and then the thickness of the photoresist layer is adjusted by controlling the rotational speed of the wafer.
光阻材料在晶圓上的均勻塗佈以及完整覆蓋對於圖案轉移的正確性具有相當大的影響。然而，習知的光阻塗佈製程常有光阻材料塗佈不均以及光阻材料覆蓋晶圓不完整的情況發生，或者是為了完整覆蓋晶圓而塗佈過多的光阻材料。如此一來，可能會影響圖案轉移的正確性或使生產成本大幅上升。另一方面，採用習知的方法，其光阻材料的用量大，製程成本高。Uniform coating of the photoresist on the wafer and complete coverage have a considerable impact on the correctness of the pattern transfer. However, the conventional photoresist coating process often has uneven coating of the photoresist material and the incompleteness of the photoresist covering the wafer, or coating too much photoresist material to completely cover the wafer. As a result, it may affect the correctness of the pattern transfer or increase the production cost. On the other hand, according to the conventional method, the amount of the photoresist material is large, and the process cost is high.
本發明提供一種光阻塗佈製程，使光阻材料能均勻地覆蓋整個晶圓表面且能夠節省光阻材料的用量。The present invention provides a photoresist coating process that allows the photoresist material to uniformly cover the entire wafer surface and saves the amount of photoresist material.
本發明提出一種光阻塗佈製程，包括進行第一步驟以及第二步驟。在第一步驟中，以第一平均加速率旋轉晶圓。在第二步驟中，以第二平均加速率旋轉晶圓。其中，第一平均加速率與第二平均加速率大於零，並且僅在第二步驟提供光阻材料至晶圓上。The present invention provides a photoresist coating process comprising performing a first step and a second step. In a first step, the wafer is rotated at a first average rate of increase. In a second step, the wafer is rotated at a second average rate of increase. Wherein the first average acceleration rate and the second average acceleration rate are greater than zero, and the photoresist material is provided onto the wafer only in the second step.
依據本發明實例所述，上述第二步驟是以多階段加速率旋轉晶圓。According to an embodiment of the invention, the second step is to rotate the wafer at a multi-stage acceleration rate.
依據本發明實例所述，上述各階段加速率旋轉晶圓的步驟包括加速旋轉晶圓與等速旋轉晶圓。According to an embodiment of the present invention, the step of rotating the wafer at each of the above stages includes accelerating the rotating wafer and the constant velocity rotating wafer.
依據本發明實例所述，上述第二平均加速率小於或等於第一平均加速率。According to an embodiment of the invention, the second average acceleration rate is less than or equal to the first average acceleration rate.
依據本發明實例所述，上述光阻塗佈製程更包括進行速率調控步驟，使晶圓上的光阻材料均勻分佈。According to the examples of the present invention, the photoresist coating process further includes performing a rate adjustment step to uniformly distribute the photoresist material on the wafer.
依據本發明實例所述，上述速率調控步驟包括反覆地加速旋轉晶圓與減速旋轉晶圓。According to an embodiment of the invention, the rate adjustment step includes repeatedly accelerating the rotating wafer and decelerating the rotating wafer.
依據本發明實例所述，上述速率調控步驟之速率呈阻尼弦波波形(DAMPED SINUSOIDAL)。According to an embodiment of the invention, the rate control step is at a rate of a sinusoidal waveform (DAMPED SINUSOIDAL).
依據本發明實例所述，上述在速率調控步驟中，加速旋轉晶圓與減速旋轉晶圓的步驟之間更包括使晶圓等速旋轉。According to the embodiment of the present invention, in the rate adjusting step, the step of accelerating the rotating wafer and the step of decelerating the rotating wafer further comprises rotating the wafer at a constant speed.
依據本發明實例所述，上述速率調控步驟之速率呈脈衝波形。According to an embodiment of the invention, the rate of the rate adjustment step is a pulse waveform.
依據本發明實例所述，上述速率調控步驟的速率範圍大於零且小於第二步驟的最終速率。According to an embodiment of the invention, the rate range of the rate adjustment step is greater than zero and less than the final rate of the second step.
依據本發明實例所述，上述速率調控步驟的速率範圍在第二步驟的速率範圍內。According to an embodiment of the invention, the rate range of the rate adjustment step is within the rate range of the second step.
依據本發明實例所述，上述第一步驟為一預濕步驟，施加一溶劑至晶圓上，以潤濕晶圓。According to an embodiment of the invention, the first step is a pre-wetting step of applying a solvent to the wafer to wet the wafer.
依據本發明實例所述，上述光阻塗佈製程更包括在第一步驟之前進行一初始步驟，不施加任何物質，使晶圓等速旋轉。According to an embodiment of the present invention, the photoresist coating process further includes performing an initial step before the first step, without applying any substance, to rotate the wafer at a constant speed.
依據本發明實例所述，上述初始步驟的速率大於零且小於第一步驟的最終速率。According to an embodiment of the invention, the rate of the initial steps described above is greater than zero and less than the final rate of the first step.
本發明另提出一種光阻塗佈製程，包括下列步驟。首先，提供一光阻材料在一旋轉的晶圓上。而後，進行一速率調控步驟，使晶圓上的光阻材料均勻分佈，其中速率調控步驟包括反覆地加速晶圓與減速晶圓。The invention further provides a photoresist coating process comprising the following steps. First, a photoresist material is provided on a rotating wafer. Then, a rate adjustment step is performed to evenly distribute the photoresist material on the wafer, wherein the rate adjustment step includes repeatedly accelerating the wafer and decelerating the wafer.
依據本發明實例所述，上述速率調控步驟之速率呈阻尼弦波波形(DAMPED SINUSOIDAL)。According to an embodiment of the invention, the rate control step is at a rate of a sinusoidal waveform (DAMPED SINUSOIDAL).
依據本發明實例所述，上述在速率調控步驟中，加速旋轉晶圓與減速旋轉晶圓的步驟之間更包括使晶圓等速旋轉。According to the embodiment of the present invention, in the rate adjusting step, the step of accelerating the rotating wafer and the step of decelerating the rotating wafer further comprises rotating the wafer at a constant speed.
依據本發明實例所述，上述速率調控步驟之速率呈脈衝波形。According to an embodiment of the invention, the rate of the rate adjustment step is a pulse waveform.
本發明之光阻塗佈製程僅在第二步驟中提供光阻材料，其中反覆地加速旋轉晶圓以及等速旋轉晶圓使光阻材 料能均勻地塗佈且覆蓋整個晶圓表面，故能節省光阻材料的用量，使生產成本大幅下降。再者，在停止供應光阻材料後，更以反覆地加速晶圓與減速晶圓的方式使光阻材料塗佈地更均勻，進而使光阻層具有適當且均一的厚度，以利後續圖案轉移的進行。The photoresist coating process of the present invention provides a photoresist material only in the second step, wherein the wafer is repeatedly accelerated and the wafer is rotated at a constant speed to make the photoresist The material can be uniformly coated and covers the entire surface of the wafer, so that the amount of the photoresist material can be saved, and the production cost is greatly reduced. Furthermore, after the supply of the photoresist material is stopped, the photoresist material is more uniformly coated in a manner of repeatedly accelerating the wafer and decelerating the wafer, so that the photoresist layer has an appropriate and uniform thickness to facilitate subsequent patterns. The transfer proceeds.
為讓本發明之上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式，作詳細說明如下。The above described features and advantages of the present invention will be more apparent from the following description.
本發明提出一種光阻塗佈製程，包括對晶圓進行分別具有一平均加速率的第一步驟與第二步驟，且僅在第二步驟中提供光阻材料，使光阻材料能均勻地塗佈且覆蓋整個晶圓表面，以及節省光阻材料的用量。再者，本發明又提出一種光阻塗佈製程，在提供光阻材料在旋轉的晶圓上後，對晶圓進行一速率調控步驟，使光阻材料能均勻的分佈於晶圓上。在接下來的實施例中，將以結合上述兩種光阻塗佈製程為例，但本發明不以此為限，上述的兩種光阻塗佈製程可以分別與習知的光阻塗佈方式結合而有各種實施方式。The present invention provides a photoresist coating process comprising a first step and a second step of respectively performing an average acceleration rate on a wafer, and providing a photoresist material only in the second step, so that the photoresist material can be uniformly coated. The cloth covers the entire wafer surface and saves the amount of photoresist material. Furthermore, the present invention further provides a photoresist coating process for performing a rate adjustment step on the wafer after the photoresist material is provided on the rotating wafer, so that the photoresist material can be uniformly distributed on the wafer. In the following embodiments, the above two photoresist coating processes are taken as an example, but the invention is not limited thereto, and the above two photoresist coating processes can be separately coated with conventional photoresists. There are various ways to combine the modes.
圖1繪示為本發明一實施例之光阻塗佈製程中的晶圓的旋轉速率與晶圓的旋轉時間的關係圖。其中，線段A表示晶圓的旋轉速率，線段B表示提供光阻材料的時間。1 is a graph showing the relationship between the rotation rate of a wafer and the rotation time of a wafer in a photoresist coating process according to an embodiment of the present invention. Among them, the line segment A represents the rotation rate of the wafer, and the line segment B represents the time at which the photoresist material is provided.
首先，將晶圓置於半導體機台中。晶圓例如是基底或是已形成有材料層的基底。半導體機台例如是光阻塗佈機台。First, the wafer is placed in a semiconductor machine. The wafer is, for example, a substrate or a substrate on which a material layer has been formed. The semiconductor machine is, for example, a photoresist coating machine.
請參照圖1，接著，進行初始步驟10，不施加任何物質至晶圓上，使晶圓等速旋轉。初始步驟10可以移除晶圓表面的灰塵或雜質，以減小晶圓表面的摩擦阻力，進而使後續的光阻材料更容易進行塗佈的動作。在本實施例中，晶圓旋轉的速率的範圍例如是大於0且小於2000 rpm。Referring to FIG. 1, next, an initial step 10 is performed, and no substance is applied to the wafer to rotate the wafer at a constant speed. The initial step 10 can remove dust or impurities from the surface of the wafer to reduce the frictional resistance of the wafer surface, thereby making the subsequent photoresist material easier to coat. In the present embodiment, the rate of wafer rotation is, for example, greater than 0 and less than 2000 rpm.
之後，進行靜置步驟15，使晶圓的旋轉速率遞減至0，並保持在0 rpm數秒，例如是2秒。同樣地，在此靜置步驟15仍不施加任何物質至晶圓上。Thereafter, a rest step 15 is performed to decrement the wafer rotation rate to zero and to remain at 0 rpm for a few seconds, for example 2 seconds. Likewise, no matter is applied to the wafer during this resting step 15.
然後，對晶圓進行第一步驟20，以一第一平均加速率旋轉晶圓，使晶圓由0 rpm達到一個足夠高的最終速率，例如是大於初始步驟的速率。在本實施例中，在第一步驟20中，例如是在4秒至4.5秒內，使晶圓的旋轉速率由0 rpm升高至2500 rpm。同樣地，在此第一步驟20仍不施加光阻材料至晶圓上。在本實施例中，第一步驟20例如是預濕步驟，其更包括在晶圓旋轉的同時施加一溶劑至晶圓表面上，使晶圓表面濕潤，以增加後續光阻材料對晶圓表面的附著能力。溶劑例如是預濕潤溶劑。Then, the wafer is subjected to a first step 20 of rotating the wafer at a first average rate of acceleration to bring the wafer from 0 rpm to a sufficiently high final rate, for example, a rate greater than the initial step. In the present embodiment, in the first step 20, the rotation rate of the wafer is raised from 0 rpm to 2500 rpm, for example, within 4 seconds to 4.5 seconds. Likewise, no photoresist material is applied to the wafer in this first step 20. In this embodiment, the first step 20 is, for example, a pre-wetting step, which further includes applying a solvent to the surface of the wafer while the wafer is rotating to wet the surface of the wafer to increase the surface of the photoresist to the surface of the wafer. Adhesion ability. The solvent is, for example, a pre-wet solvent.
在進行第一步驟20之後，對晶圓進行第二步驟30。在本發明中，如線段B所示，僅在此步驟30中將光阻材料提供至晶圓上，而在其他的步驟中，則不將光阻材料提供至晶圓上。進行第二步驟30的初速率與第一步驟20的最終速率大致相同，並再以一第二平均加速率旋轉晶圓。第二平均加速率例如是小於或等於第一平均加速率。在本實施例中，在第一步驟20中，例如是在4.5秒至6秒內， 使晶圓中旋轉的速率由2500rpm升高至3600 rpm。在本實施例中，第二步驟30例如是以多階段加速率旋轉晶圓，每一階段加速旋轉晶圓的步驟包括加速旋轉晶圓與等速旋轉晶圓。詳言之，光阻材料是施加至旋轉中的晶圓，而反覆地使晶圓加速旋轉與等速旋轉，使光阻材料能均勻地塗佈且覆蓋整個晶圓表面。光阻材料可以是正光阻或負光阻。在本實施例中，光阻材料包括溶劑、樹脂以及感光劑，其例如是丙二醇甲醚乙酸酯(propylene glycol methyl ether acetate)、酚醛(苯酚甲醛樹脂，phenol formaldehyde resin)以及雙氮基奈(diazonaphthoquinone)。After the first step 20 is performed, a second step 30 is performed on the wafer. In the present invention, as shown in line B, the photoresist material is provided to the wafer only in this step 30, and in other steps, the photoresist material is not provided onto the wafer. The initial rate at which the second step 30 is performed is substantially the same as the final rate at the first step 20, and the wafer is rotated at a second average acceleration rate. The second average acceleration rate is, for example, less than or equal to the first average acceleration rate. In this embodiment, in the first step 20, for example, within 4.5 seconds to 6 seconds, The rate of rotation in the wafer was increased from 2500 rpm to 3600 rpm. In this embodiment, the second step 30 is, for example, rotating the wafer at a multi-stage acceleration rate, and the step of accelerating the rotating wafer at each stage includes accelerating the rotating wafer and the constant-speed rotating wafer. In detail, the photoresist material is applied to the rotating wafer, and the wafer is repeatedly rotated and rotated at a constant speed to uniformly coat the photoresist material and cover the entire wafer surface. The photoresist material can be a positive photoresist or a negative photoresist. In this embodiment, the photoresist material includes a solvent, a resin, and a sensitizer, which are, for example, propylene glycol methyl ether acetate, phenol formaldehyde resin, and bis-zinophthalene ( Diazonaphthoquinone).
在本實施例中，在第二步驟30之後，停止提供光阻材料，對晶圓進行一速率調控步驟40，使晶圓上的光阻材料可以塗佈地更均勻，進而使光阻層具有均一且適當的厚度。速率調控步驟40的速率範圍大於零且小於第二步驟的最終速率。在本實施例中，速率調控步驟的速率範圍在第二步驟的速率範圍內，例如是在2700 rpm至3600 rpm之間。在一實施例中，速率調控步驟40包括反覆地加速旋轉晶圓、等速旋轉晶圓以及減速旋轉晶圓。速率調控步驟40的速率例如是呈脈衝波形，如圖1所示者。在另一實施例中，速率調控步驟40只包括反覆地加速旋轉晶圓與減速旋轉晶圓。速率調控步驟40的速率例如是呈阻尼弦波波形(DAMPED SINUSOIDAL)，如圖2所示者。In this embodiment, after the second step 30, the supply of the photoresist material is stopped, and the wafer is subjected to a rate adjustment step 40 to make the photoresist material on the wafer more uniformly coated, thereby allowing the photoresist layer to have Uniform and appropriate thickness. The rate range of rate adjustment step 40 is greater than zero and less than the final rate of the second step. In this embodiment, the rate of the rate adjustment step is in the range of the second step, for example between 2700 rpm and 3600 rpm. In one embodiment, the rate adjustment step 40 includes repeatedly rotating the wafer, rotating the wafer at a constant speed, and decelerating the wafer. The rate of the rate adjustment step 40 is, for example, a pulse waveform, as shown in FIG. In another embodiment, the rate adjustment step 40 only includes repeatedly accelerating the rotating wafer and decelerating the rotating wafer. The rate of the rate adjustment step 40 is, for example, a sinusoidal waveform (DAMPED SINUSOIDAL), as shown in FIG.
綜上所述，光阻塗佈製程僅在第二步驟中提供光阻材料，故能節省光阻材料的用量，使生產成本大幅下降。此外，在提供光阻材料至晶圓上時，以多階段加速旋轉晶圓， 可使光阻材料能覆蓋整個晶圓表面且均勻地分佈在晶圓上。再者，在停止供應光阻材料後所進行的速率調控步驟，可使光阻材料塗佈地更均勻，使所形成的光阻層具有均一且適當的厚度，以利後續圖案轉移的進行，進而提升元件的可靠度。此外，本發明之光阻塗佈製程可使用現有的光阻塗佈設備，且其可分別與現有的光阻製程整合，故不會造成生產成本的大幅增加。In summary, the photoresist coating process only provides the photoresist material in the second step, so that the amount of the photoresist material can be saved, and the production cost is greatly reduced. In addition, when the photoresist material is provided onto the wafer, the wafer is accelerated in multiple stages, The photoresist material can be applied to cover the entire wafer surface and evenly distributed on the wafer. Furthermore, the rate control step performed after the supply of the photoresist material is stopped, the photoresist material can be coated more uniformly, and the formed photoresist layer has a uniform and appropriate thickness for subsequent pattern transfer. In turn, the reliability of the component is improved. In addition, the photoresist coating process of the present invention can use existing photoresist coating equipment, and it can be integrated with the existing photoresist process, respectively, so that the production cost is not greatly increased.
雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作些許之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the invention, and any one of ordinary skill in the art can make some modifications and refinements without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims.
10‧‧‧初始步驟10‧‧‧ initial steps
15‧‧‧靜置步驟15‧‧‧Standing steps
20‧‧‧第一步驟20‧‧‧First steps
30‧‧‧第二步驟30‧‧‧ second step
40‧‧‧速率調控步驟40‧‧‧ Rate control steps
A‧‧‧晶圓的旋轉速率A‧‧‧ wafer rotation rate
B‧‧‧提供光阻材料的時間B‧‧‧Time to provide photoresist
圖1繪示為本發明一實施例之光阻塗佈製程中的晶圓的旋轉速率與晶圓的旋轉時間的關係圖。1 is a graph showing the relationship between the rotation rate of a wafer and the rotation time of a wafer in a photoresist coating process according to an embodiment of the present invention.
圖2繪示為本發明另一實施例之光阻塗佈製程中的晶圓的旋轉速率與晶圓的旋轉時間的關係圖。2 is a graph showing relationship between a rotation rate of a wafer and a rotation time of a wafer in a photoresist coating process according to another embodiment of the present invention.
10‧‧‧初始步驟10‧‧‧ initial steps
15‧‧‧靜置步驟15‧‧‧Standing steps
20‧‧‧第一步驟20‧‧‧First steps
30‧‧‧第二步驟30‧‧‧ second step
40‧‧‧速率調控步驟40‧‧‧ Rate control steps
A‧‧‧晶圓的旋轉速率A‧‧‧ wafer rotation rate
B‧‧‧提供光阻材料的時間B‧‧‧Time to provide photoresist
Claims (18)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW97129078A TWI382284B (en) | 2008-07-31 | 2008-07-31 | Photoresist coating process |
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| Application Number | Priority Date | Filing Date | Title |
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| TW97129078A TWI382284B (en) | 2008-07-31 | 2008-07-31 | Photoresist coating process |
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| Publication Number | Publication Date |
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| TW201005450A TW201005450A (en) | 2010-02-01 |
| TWI382284B true TWI382284B (en) | 2013-01-11 |
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| TW97129078A TWI382284B (en) | 2008-07-31 | 2008-07-31 | Photoresist coating process |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5677001A (en) * | 1996-08-22 | 1997-10-14 | Vanguard International Semiconductor Corporation | Striation-free coating method for high viscosity resist coating |
| US20040076749A1 (en) * | 2002-10-22 | 2004-04-22 | Nanya Technology Corporation | Method for coating low viscosity materials |
| US20060223336A1 (en) * | 2005-04-04 | 2006-10-05 | Yayi Wei | Method for forming a resist film on a substrate having non-uniform topography |
-
2008
- 2008-07-31 TW TW97129078A patent/TWI382284B/en active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5677001A (en) * | 1996-08-22 | 1997-10-14 | Vanguard International Semiconductor Corporation | Striation-free coating method for high viscosity resist coating |
| US20040076749A1 (en) * | 2002-10-22 | 2004-04-22 | Nanya Technology Corporation | Method for coating low viscosity materials |
| US20060223336A1 (en) * | 2005-04-04 | 2006-10-05 | Yayi Wei | Method for forming a resist film on a substrate having non-uniform topography |
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| TW201005450A (en) | 2010-02-01 |
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