TWI381921B - Punching method - Google Patents
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- TWI381921B TWI381921B TW98141895A TW98141895A TWI381921B TW I381921 B TWI381921 B TW I381921B TW 98141895 A TW98141895 A TW 98141895A TW 98141895 A TW98141895 A TW 98141895A TW I381921 B TWI381921 B TW I381921B
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Description
本發明涉及衝型技術,尤其涉及一種對電路板基材進行衝型之方法。 The present invention relates to a punching technique, and more particularly to a method of punching a circuit board substrate.
印刷電路板因具有裝配密度高等優點而得到了廣泛之應用。關於高密度互連電路板之應用請參見文獻Takahashi, A. Ooki, N. Nagai, A. Akahoshi, H. Mukoh, A. Wajima, M. Res. Lab., High density multilayer printed circuit board for HITAC M-880,IEEE Trans. on Components, Packaging, and Manufacturing Technology, 1992, 15(4): 418-425。 Printed circuit boards have been widely used due to their high assembly density. For applications on high-density interconnect boards, see the literature Takahashi, A. Ooki, N. Nagai, A. Akahoshi, H. Mukoh, A. Wajima, M. Res. Lab., High density multilayer printed circuit board for HITAC M -880, IEEE Trans. on Components, Packaging, and Manufacturing Technology, 1992, 15(4): 418-425.
於電路板產品之表面及不同之層間貼合覆蓋膜來保護電路。所述保護膜內需要開設有與導電線路圖形中需要與外界連通之區域形成開口。因此,於電路板中貼合覆蓋膜之前,需要對覆蓋膜進行衝型形成開口,以與其要貼合之電路板相配合。為了提高覆蓋膜衝型之速度,對覆蓋膜衝型採用跳衝或者旋轉衝之方式。跳衝就是採用對於處於卷狀之覆蓋膜,將其固定於衝型機台,藉由旋轉覆蓋膜之卷,對覆蓋膜之一端向另一端連續衝型。而旋轉衝則是於覆蓋膜之一面衝型結束之後,使得覆蓋膜於於與其平行之平面旋轉180度,再進行另一次衝型,從而於覆蓋膜內得到相互對稱之結構。於現有技術中,對上述之兩種衝型方法缺少系統之檢測方法,通常是將衝型 後之產品貼合於電路板後,藉由目視檢測,才能發現衝型得到之覆蓋膜存於偏差,則需要將貼合之覆蓋膜去除,並重新貼合偏差滿足要求之覆蓋膜,從而浪費時間,影響電路板生產效率。 The cover film is adhered to the surface of the circuit board product and between different layers to protect the circuit. An opening is formed in the protective film to form an area in the conductive line pattern that needs to communicate with the outside. Therefore, before the cover film is attached to the circuit board, the cover film needs to be punched to form an opening to match the circuit board to which it is to be attached. In order to increase the speed of the cover film punching type, the cover film punching type adopts a method of jumping or rotating. The jumper is a film that is in the form of a roll and is fixed to the punching machine. By rotating the roll of the cover film, one end of the cover film is continuously punched toward the other end. The rotary rushing is performed after the surface of the cover film is finished, so that the cover film is rotated by 180 degrees in a plane parallel thereto, and another punching pattern is performed, thereby obtaining mutually symmetrical structures in the cover film. In the prior art, there is a lack of a systematic detection method for the above two types of punching methods, usually a punching type. After the product is attached to the circuit board, it can be found by visual inspection that the cover film obtained by the punch type is deviated, and the cover film needs to be removed, and the cover film with the deviation satisfying the requirements is re-applied, thereby wasting Time, affecting board production efficiency.
有鑑於此,提供一種能夠於衝型之後貼合之前就檢測出衝型基材之偏差情況之衝型方法實屬必要。 In view of the above, it is necessary to provide a punching method capable of detecting a deviation of a punched substrate before bonding after punching.
以下將以實施例說明一種衝型方法。 A punching method will be described below by way of example.
一種衝型方法,包括步驟:提供衝型模具,所述衝型模具包括依次設置之第一衝模、第二衝模以及第三衝模;提供衝型基材,所述衝型基材包括第一非產品區域、第一產品區域、第二非產品區域以及第二產品區域,所述第一產品區域位於第一非產品區域和第二非產品區域之間;利用所述衝型模具對衝型基材進行第一次衝型,以使得第一衝模於衝型基材之第一非產品區域形成第一測試圖案,第二衝模於產品區域形成第一產品圖案,第三衝模於第二非產品區域形成第二測試圖案;移動第一次衝型後之衝型基材,以使移動後之衝型基材之第二非產品區域位於移動前之衝型基材之第一非產品區域所在位置,移動後之衝型基材之第二產品區域位於移動前之衝型基材之第一產品區域所在位置;利用所述衝型模具對移動後之衝型基材進行第二次衝型,以使得第一衝模於衝型基材之第二非產品區域亦形成一第一測試圖案,第二衝模於第二產品區域形成第二產品圖案;檢測第一次衝型於第二非產品區域形成之第二測試圖案與第二次衝 型時於第二非產品區域形成之第一測試圖案之相對位置,從而判斷第一次衝型時於第一產品區域形成之第一產品圖案和第二次衝型時於第二產品區域形成之第二產品圖案之偏差是否滿足偏位公差之要求。 A punching method comprising the steps of: providing a punching die, the punching die comprising a first die, a second die and a third die arranged in sequence; providing a punching substrate, the punching substrate comprising the first non a product area, a first product area, a second non-product area, and a second product area, the first product area being located between the first non-product area and the second non-product area; using the punching die to punch the substrate Performing a first punching pattern such that the first die forms a first test pattern on the first non-product region of the punched substrate, the second die forms a first product pattern in the product region, and the third die is in the second non-product region Forming a second test pattern; moving the punched substrate after the first punching so that the second non-product region of the moved stamped substrate is located at the first non-product region of the punched substrate before moving a second product region of the punched substrate after the movement is located at a position of the first product region of the punched substrate before the moving; and the punched substrate is subjected to the second punching by using the punching die. To make the first Forming a first test pattern in the second non-product area of the die-cast substrate, the second die forming a second product pattern in the second product area; detecting the second formation of the second non-product area Test pattern and second rush Forming a relative position of the first test pattern formed in the second non-product area, thereby determining that the first product pattern formed in the first product region and the second product region are formed in the second product region when the first punching pattern is formed Whether the deviation of the second product pattern satisfies the requirement of the offset tolerance.
與先前技術相比,本技術方案提供之衝型方法,只需於衝型模具設置與第一測試圖案及與第一測試圖案對應之第二測試圖案之衝模,將先後兩次進行衝型形成之第一測試圖案與第二測試圖案之位置關係進行檢測,從而便可判定兩次衝型之間之偏差是否滿足偏位公差之要求。本技術方案之偏差檢測方法可防止偏位公差不滿足要求之衝型產品流入後續之生產製程中,並且具有製程簡單及便於操作之特點。 Compared with the prior art, the punching method provided by the technical solution only needs to set the punching die with the first test pattern and the die of the second test pattern corresponding to the first test pattern, and the punching pattern is formed twice. The positional relationship between the first test pattern and the second test pattern is detected, so that it can be determined whether the deviation between the two punch patterns satisfies the requirement of the offset tolerance. The deviation detection method of the technical solution can prevent the punched product whose offset tolerance does not meet the requirements from flowing into the subsequent production process, and has the characteristics of simple process and easy operation.
下面結合附圖及複數實施例對本技術方案提供之衝型方法作進一步說明。 The punching method provided by the technical solution will be further described below with reference to the accompanying drawings and the plural embodiments.
本技術方案第一實施例提供之一種衝型方法,所述衝型方法可應用於對衝型基材進行衝型之偏差之檢測,該衝型方法包括步驟:請參閱圖1,第一步,提供衝型模具100。 The first embodiment of the present technical solution provides a punching method, and the punching method can be applied to the detection of the deviation of the punching type substrate, and the punching method includes the steps: refer to FIG. 1, the first step, A punching die 100 is provided.
衝型模具100包括依次設置之第一衝模110、第二衝模120與第三衝模130。第一衝模110用於形成第一測試圖案,第二衝模120用於形成產品圖案,第三衝模130用於形成第二測試圖案。 The punching die 100 includes a first die 110, a second die 120, and a third die 130 which are sequentially disposed. The first die 110 is used to form a first test pattern, the second die 120 is used to form a product pattern, and the third die 130 is used to form a second test pattern.
本實施例中,第一衝模110具有四橫截面為圓形之四第一 衝子111,四第一衝子111之直徑相等並且等角度設置,即四第一衝子111中心對稱設置。第三衝模130具有一個橫截面為圓形之第二衝子131。每一第一衝子111之中心與對稱中心之距離均等於第二衝子131之半徑、第一衝子111半徑及偏位公差之和。所述偏位元公差可根據實際製作電路板之精度進行確定,其可為±0.05毫米、±0.07毫米或者為±0.10毫米。第一衝子111與第二衝子131之直徑可相等,亦可不等。 In this embodiment, the first die 110 has four cross sections that are circular and the first one. The punch 111 and the four first punches 111 have the same diameter and are equiangularly disposed, that is, the four first punches 111 are symmetrically disposed at the center. The third die 130 has a second punch 131 having a circular cross section. The distance between the center of each first punch 111 and the center of symmetry is equal to the sum of the radius of the second punch 131, the radius of the first punch 111, and the misalignment tolerance. The offset tolerance can be determined according to the accuracy of the actual fabricated circuit board, which can be ±0.05 mm, ±0.07 mm, or ±0.10 mm. The diameters of the first punch 111 and the second punch 131 may be equal or may not be equal.
第二步,請參閱圖2,提供衝型基材200。衝型基材200可為覆蓋膜等。衝型基材200包括沿其長度方向設置之複數交替排列之產品區域與非產品區域,第一衝模110之中心與第三衝模130之中心之連線平行於衝型基材200之長度方向。本實施例中,衝型基材200包括依次排列之第一非產品區域210、第一產品區域220、第二非產品區域230及第二產品區域240,即第一產品區域220位於第一非產品區域210與第二非產品區域230之間,第二產品區域240與第二非產品區域230相鄰。第一產品區域220與第二產品區域240之大小與第二衝模120之大小相對應,第一非產品區域210、第二非產品區域230之大小與第一衝模110與第三衝模130之大小相對應。 In the second step, referring to FIG. 2, a stamped substrate 200 is provided. The punched substrate 200 may be a cover film or the like. The punched substrate 200 includes a plurality of product regions and non-product regions alternately arranged along the length thereof, and a line connecting the center of the first die 110 and the center of the third die 130 is parallel to the longitudinal direction of the punched substrate 200. In this embodiment, the punched substrate 200 includes a first non-product region 210, a first product region 220, a second non-product region 230, and a second product region 240, which are sequentially arranged, that is, the first product region 220 is located at the first non-product. Between the product area 210 and the second non-product area 230, the second product area 240 is adjacent to the second non-product area 230. The size of the first product area 220 and the second product area 240 corresponds to the size of the second die 120, and the size of the first non-product area 210 and the second non-product area 230 and the size of the first die 110 and the third die 130 Corresponding.
第三步,參閱圖3,利用衝型模具100對衝型基材200進行第一次衝型,以使得第一衝模110於衝型基材200之第一非產品區域210形成第一測試圖案250,第二衝模120於第一產品區域220形成第一產品圖案221,第三衝模30於第二非產品區域230形成第二測試圖案260。 In the third step, referring to FIG. 3, the punching type substrate 200 is subjected to the first punching type by using the punching die 100, so that the first die 110 forms the first test pattern 250 in the first non-product region 210 of the punched substrate 200. The second die 120 forms a first product pattern 221 in the first product region 220, and the third die 30 forms a second test pattern 260 in the second non-product region 230.
將衝型模具100之第一衝模110與衝型基材200之第一非產品區域210相對應,第二衝模120與衝型基材200之第一產品區域220相對應,第三衝模130與衝型基材200之第二非產品區域230相對應。衝型模具100於衝型機台(圖未示)壓力之作用下,於衝型基材200之第一非產品區域210形成第一測試圖案250,衝型基材200之第一產品區域220形成第一產品圖案221,衝型基材200之第二非產品區域230形成第二測試圖案260。本實施例中,第一測試圖案250為4個中心對稱並等角度等間隔設置之圓孔,並將4個圓孔之對稱中心定義為第一測試圖案250之中心。第二測試圖案260為一圓孔,該圓孔之圓心定義為第二測試圖案260之中心。第一測試圖案250之中心與第二測試圖案260之中心之間距定義為第一測試圖案250與第二測試圖案260之間之距離。 The first die 110 of the stamping die 100 corresponds to the first non-product region 210 of the stamped substrate 200, the second die 120 corresponds to the first product region 220 of the stamped substrate 200, and the third die 130 is The second non-product region 230 of the stamped substrate 200 corresponds. The punching die 100 forms a first test pattern 250 on the first non-product region 210 of the punched substrate 200 under the pressure of a punching machine (not shown), and the first product region 220 of the stamped substrate 200 A first product pattern 221 is formed, and the second non-product region 230 of the stamped substrate 200 forms a second test pattern 260. In this embodiment, the first test pattern 250 is four centrally symmetric and equiangularly arranged circular holes, and the center of symmetry of the four circular holes is defined as the center of the first test pattern 250. The second test pattern 260 is a circular hole whose center is defined as the center of the second test pattern 260. The distance between the center of the first test pattern 250 and the center of the second test pattern 260 is defined as the distance between the first test pattern 250 and the second test pattern 260.
第四步,參閱圖3,沿平行於第一衝模110之中心與第三衝模130之中心連線之方向移動第一次衝型後之衝型基材200,以使移動後之衝型基材200之第二非產品區域230位於移動前第一非產品區域210所於位置,移動後之衝型基材200之第二產品區域240位於移動前第一產品區域220所於之位置。 In the fourth step, referring to FIG. 3, the punched substrate 200 of the first punch type is moved in a direction parallel to the center of the first die 110 and the center of the third die 130, so as to make the punched base after the movement. The second non-product area 230 of the material 200 is located at the position of the first non-product area 210 before the movement, and the second product area 240 of the moved stamped substrate 200 is located at the position of the first product area 220 before the movement.
本實施例中,第一衝模110之中心與第三衝模130之中心之連線平行於衝型基材200之長度方向,沿著平行於第一衝模110之中心與第三衝模130之中心連線之方向移動第一次衝型後之衝型基材200,並使得衝型基材200移動之距離與第一測試圖案250與第二測試圖案260之距離相等 ,從而使得以使移動後之衝型基材200之第二非產品區域230位於移動前第一非產品區域210所於位置,移動後之衝型基材200之第二產品區域240位於移動前第一產品區域220所於之位置。 In this embodiment, the line connecting the center of the first die 110 and the center of the third die 130 is parallel to the length direction of the punched substrate 200, and is connected to the center of the third die 130 along the center parallel to the first die 110. Moving the first punched substrate 200 in the direction of the line, and moving the punched substrate 200 by a distance equal to the distance between the first test pattern 250 and the second test pattern 260 So that the second non-product area 230 of the moved stamped substrate 200 is located at the position of the first non-product area 210 before the movement, and the second product area 240 of the moved stamped substrate 200 is before the movement. The location at which the first product area 220 is located.
第五步,參閱圖4,利用衝型模具100對移動後之衝型基材200進行第二次衝型,以使得第一衝模110於衝型基材200之第二非產品區域230形成第一測試圖案250,第二衝模120於第二產品區域240形成第二產品圖案241。 In the fifth step, referring to FIG. 4, the punched substrate 200 is subjected to a second punching process by using the punching die 100, so that the first die 110 forms the second non-product region 230 of the punched substrate 200. A test pattern 250, the second die 120 forms a second product pattern 241 in the second product region 240.
藉由上一步驟中對衝型基材200之移動,使得第一衝模110與衝型基材200之第二非產品區域230相對應,第二衝模120與衝型基材200之第二產品區域240相對應。於衝型機台之壓力之作用下,第一衝模110於第二非產品區域230形成第一測試圖案250,第二衝模120於第二產品區域240形成第二產品圖案241。並且,第一次衝型形成之第二測試圖案260與第二次衝型形成之第一測試圖案250相互重合。 By the movement of the punched substrate 200 in the previous step, the first die 110 corresponds to the second non-product region 230 of the stamped substrate 200, and the second die 120 and the second product region of the stamped substrate 200 240 corresponds. Under the pressure of the punching machine, the first die 110 forms a first test pattern 250 in the second non-product area 230, and the second die 120 forms a second product pattern 241 in the second product area 240. Moreover, the second test pattern 260 formed by the first punching pattern and the first test pattern 250 formed by the second punching pattern overlap each other.
第六步,根據檢測衝型基材200第二非產品區域第一次衝型形成之第二測試圖案260與第二次衝型形成之第一測試圖案250之相對位置關係,從而判斷第一次衝型時於第一產品區域220形成之第一產品圖案221與第二次衝型時於第二產品區域240形成之第二產品圖案241之偏差是否滿足偏位公差之要求。 In the sixth step, the first positional relationship between the second test pattern 260 formed by the first punching pattern of the second non-product region of the stamped substrate 200 and the first test pattern 250 formed by the second punching pattern is detected, thereby determining the first position. Whether the deviation between the first product pattern 221 formed in the first product region 220 and the second product pattern 241 formed in the second product region 240 during the second punching type meets the requirement of the offset tolerance.
本實施例中,可採用目測之方式對第一次衝型時於第二非產品區域230形成之第二測試圖案260與第二次衝型時 於第二產品區域240形成之第一測試圖案250之相對之位置關係進行檢測。請參閱圖3,當第一次衝型與第二次衝型之偏差滿足偏位公差之要求時,第一次衝型形成之第二測試圖案260之一圓孔與第二次衝型形成之第一測試圖案250四圓孔不相交,即第二次衝型形成之第一測試圖案250之四圓孔環繞第一次衝型形成之第二測試圖案260之一個圓孔。 In this embodiment, the second test pattern 260 and the second punch type formed in the second non-product region 230 during the first punching can be visually detected. The relative positional relationship of the first test pattern 250 formed in the second product region 240 is detected. Referring to FIG. 3, when the deviation between the first punching pattern and the second punching pattern meets the requirement of the offset tolerance, one of the second test pattern 260 formed by the first punching pattern is formed by the second punching pattern and the second punching pattern. The four test holes of the first test pattern 250 do not intersect, that is, the four round holes of the first test pattern 250 formed by the second punch pattern surround a circular hole of the second test pattern 260 formed by the first punch.
請參閱圖5及圖6,當第一次衝型與第二次衝型之偏差不滿足偏位公差之要求時,第一次衝型形成之第二測試圖案260之一圓孔與第二次衝型形成之第一測試圖案250四圓孔中之一個或者複數相交。當然,第一次衝型形成之第二測試圖案260之一圓孔不位於第二次衝型形成之第一測試圖案250之四圓孔中間亦是不能滿足偏位公差要求之。 Referring to FIG. 5 and FIG. 6 , when the deviation between the first punching pattern and the second punching pattern does not meet the requirement of the offset tolerance, one of the second test patterns 260 formed by the first punching pattern has a circular hole and a second time. One or more of the four circular holes of the first test pattern 250 formed by the punching pattern intersect. Of course, the circular hole of one of the second test patterns 260 formed by the first punching type is not located in the middle of the four circular holes of the first test pattern 250 formed by the second punching type, and the offset tolerance requirement cannot be satisfied.
可理解,本實施例提供之衝型基材200可包括複數交替設置之產品區域與非產品區域,從而檢測相鄰之兩個產品區域形成之產品圖案之間之偏差是否滿足偏位公差之要求。例如,於移動第一次衝型後之衝型基材200時還使第三非產品區域位於移動前之衝型基材之第二非產品區域所於位置,利用所述衝型模具對移動後之衝型基材200進行第二次衝型時,還於第三非產品區域形成第二測試圖案,所述衝型方法於第三非產品區域形成第二測試圖案後還包括步驟:沿平行於第一衝模之中心與第二衝模之中心之連線方向移動衝型基材,使得移動後第三產品區域位於移動前第二產品區域之位置,移動後之第三非產 品區域位於移動前第二非產品區域所於之位置;利用衝型模具對衝型基材進行第三次衝型,使得第二衝模於第三產品區域形成第三產品圖案,使得第一衝模於第三非產品區域形成第一測試圖案;檢測第二次衝型於第三非產品區域形成之第二測試圖案與第三次衝型於第三非產品區域形成之第一測試圖案之間之相對位置,從而判斷第二次衝型時於第二產品區域形成之第二產品圖案與第三次衝型時於第三產品區域形成之第三產品圖案之偏差是否滿足偏位公差之要求。 It can be understood that the punched substrate 200 provided in this embodiment may include a plurality of product regions and non-product regions that are alternately disposed, thereby detecting whether the deviation between the product patterns formed by the adjacent two product regions meets the requirement of the offset tolerance. . For example, when moving the punched substrate 200 after the first punching, the third non-product region is located at the position of the second non-product region of the punched substrate before the movement, and the punching mold is used to move When the second punching type substrate 200 performs the second punching type, a second test pattern is further formed in the third non-product area, and the punching method further comprises the following steps after forming the second test pattern in the third non-product area; Moving the punched substrate parallel to the direction of the center of the first die and the center of the second die, so that the third product region after the movement is located at the position of the second product region before the movement, and the third non-product after the movement The product area is located at the position of the second non-product area before the movement; the punching type substrate is subjected to the third punching type by using the punching mold, so that the second die forms a third product pattern in the third product area, so that the first die is Forming, by the third non-product area, a first test pattern; detecting a second test pattern formed between the second test pattern formed by the third non-product area and the third test pattern formed by the third non-product area The relative position is used to determine whether the deviation between the second product pattern formed in the second product region and the third product pattern formed in the third product region during the third punching type satisfies the deviation tolerance requirement.
本技術方案第二實施例提供之一種衝型方法,該方法可應用於旋轉衝型後偏位公差之檢測。 The second embodiment of the technical solution provides a punching method, which can be applied to the detection of the offset tolerance of the rotary punching type.
請參閱圖7,第一步,提供衝型模具300。 Referring to FIG. 7, the first step is to provide a die 300.
衝型模具300包括第一衝模310、第二衝模320與第三衝模330。第一衝模310用於形成第一測試圖案,第二衝模320用於形成產品圖案,第三衝模330用於形成第二測試圖案,第一衝模310與第三衝模330關於衝型模具300之中心呈中心對稱設置。 The punching die 300 includes a first die 310, a second die 320, and a third die 330. The first die 310 is used to form a first test pattern, the second die 320 is used to form a product pattern, and the third die 330 is used to form a second test pattern, and the first die 310 and the third die 330 are adjacent to the center of the die 300 Centered symmetrically.
本實施例中,第一衝模310具有四橫截面為圓形之四第一衝子311,四個第一衝子311之直徑相等並且等角度設置,即四個第一衝子311中心對稱設置。第三衝模330具有一個橫截面為圓形之第二衝子331。每個第一衝子311之中心與對稱中心之距離均等於第二衝子331之半徑、第一衝子311半徑及偏位公差之和。所述偏位元公差可根據實際製作電路板之精度進行確定,其可為±0.05毫米、± 0.07毫米或者為±0.10毫米。第一衝子311與第二衝子331之直徑可相等,亦可不等。 In this embodiment, the first die 310 has four first punches 311 having a circular cross section, and the four first punches 311 are equal in diameter and equiangularly disposed, that is, the four first punches 311 are symmetrically disposed at the center. . The third die 330 has a second punch 331 having a circular cross section. The distance between the center of each first punch 311 and the center of symmetry is equal to the sum of the radius of the second punch 331, the radius of the first punch 311, and the misalignment tolerance. The offset of the offset can be determined according to the accuracy of the actual circuit board, which can be ±0.05 mm, ± 0.07 mm or ±0.10 mm. The diameters of the first punch 311 and the second punch 331 may be equal or may not be equal.
請參閱圖8,提供衝型基材400。衝型基材400可為覆蓋膜等。衝型基材400包括依次排列之第一非產品區域410、第一產品區域420、第二非產品區域430及第二產品區域440。第一產品區域420與第二產品區域440位於第一非產品區域410與第二非產品區域430之間,並且第一產品區域420與第二產品區域440關於衝型基材400中心對稱設置。第一產品區域420之大小與第二衝模320之大小相對應,第一非產品區域410、第二非產品區域430之大小與第一衝模310與第三衝模330之大小相對應。 Referring to Figure 8, a stamped substrate 400 is provided. The punched substrate 400 may be a cover film or the like. The stamped substrate 400 includes a first non-product region 410, a first product region 420, a second non-product region 430, and a second product region 440 that are sequentially arranged. The first product region 420 and the second product region 440 are located between the first non-product region 410 and the second non-product region 430, and the first product region 420 and the second product region 440 are symmetrically disposed about the center of the punched substrate 400. The size of the first product region 420 corresponds to the size of the second die 320, and the size of the first non-product region 410 and the second non-product region 430 corresponds to the size of the first die 310 and the third die 330.
第三步,請參閱圖9,利用衝型模具300對衝型基材400進行第一次衝型,以使得第一衝模310於衝型基材400之第一非產品區域410形成第一測試圖案450,第二衝模320於第一產品區域420形成第一產品圖案421,第三衝模330於第二非產品區域430形成第二測試圖案460。 In the third step, referring to FIG. 9, the punching type substrate 400 is subjected to the first punching type by using the punching die 300, so that the first die 310 forms the first test pattern on the first non-product region 410 of the punched substrate 400. 450, the second die 320 forms a first product pattern 421 in the first product region 420, and the third die 330 forms a second test pattern 460 in the second non-product region 430.
將衝型模具300之第一衝模310與衝型基材400之第一非產品區域410相對應,第二衝模320與衝型基材400之第一產品區域420相對應,第三衝模330與衝型基材400之第二非產品區域430相對應。衝型模具300於衝型機台(圖未示)壓力之作用下,於衝型基材400之第一非產品區域410形成第一測試圖案450,衝型基材400之第一產品區域420形成第一產品圖案421,衝型基材400之第二非產品區域430形成第二測試圖案460。本實施例中,第一測試圖案450為四個中心對稱並等角度等間隔設置之圓孔 ,並將4個圓孔之對稱中心定義為第一測試圖案450之中心。第二測試圖案460為一圓孔,該圓孔之圓心定義為第二測試圖案460之中心。 The first die 310 of the stamping die 300 corresponds to the first non-product region 410 of the stamped substrate 400, the second die 320 corresponds to the first product region 420 of the stamped substrate 400, and the third die 330 is associated with The second non-product region 430 of the stamped substrate 400 corresponds. The punching die 300 forms a first test pattern 450 on the first non-product region 410 of the punched substrate 400 under the pressure of a punching machine (not shown), and the first product region 420 of the punched substrate 400 A first product pattern 421 is formed, and a second non-product region 430 of the stamped substrate 400 forms a second test pattern 460. In this embodiment, the first test pattern 450 is a circular hole with four centers symmetrically and equally spaced at equal intervals. And define the center of symmetry of the four circular holes as the center of the first test pattern 450. The second test pattern 460 is a circular hole whose center of the circle is defined as the center of the second test pattern 460.
第四步,請參閱圖10,使第一次衝型後之衝型基材400於其所於之平面內繞衝型模具300之中心旋轉180度,以使轉動後之衝型基材200之第一非產品區域410位於移動前第二非產品區域430所於位置,移動後之衝型基材400之第二非產品區域430位於移動前第一非產品區域410所於之位置,移動後第二產品區域440位於已動前第一產品區域420所於之位置。 In the fourth step, referring to FIG. 10, the punched substrate 400 after the first punching is rotated 180 degrees in the center of the punching die 300 in the plane thereof, so that the punched substrate 200 after the rotation is rotated. The first non-product area 410 is located at the position of the second non-product area 430 before the movement, and the second non-product area 430 of the moved punched substrate 400 is located at the position of the first non-product area 410 before the movement, moving The rear second product area 440 is located at the location of the first product area 420 before the move.
第五步,請參閱圖10,利用衝型模具300對移動後之衝型基材400進行第二次衝型,以使得第一衝模310於衝型基材400之第二非產品區域430形成第一測試圖案450,第二衝模320於第一產品區域420形成第二產品圖案422,第三衝模330於第一非產品區域410形成第二測試圖案460。 In the fifth step, referring to FIG. 10, the punched substrate 400 is subjected to a second punching process by using the punching die 300 so that the first die 310 is formed in the second non-product region 430 of the punched substrate 400. The first test pattern 450, the second die 320 forms a second product pattern 422 in the first product region 420, and the third die 330 forms a second test pattern 460 in the first non-product region 410.
藉由上一步驟中對衝型基材400之轉動,使得第一衝模310與衝型基材400之第二非產品區域430相對應,第二衝模320與衝型基材400之第二產品區域440相對應,第三衝模330與衝型基材400之第一非產品區域410相對應。於衝型機台之壓力之作用下,第一衝模310於第二非產品區域430形成第一測試圖案450,第二衝模120於第二產品區域440形成第二產品圖案422。並且,第一次衝型形成之第二測試圖案260與第二次衝型形成之第一測試圖案250相互重合,第一次衝型形成之第一測試圖案250與 第二次衝型形成之第二測試圖案260相互重合,第一次衝型形成之第一產品圖案421與第二次衝型形成之第二產品圖案441中心對稱。 By rotating the punched substrate 400 in the previous step, the first die 310 corresponds to the second non-product region 430 of the stamped substrate 400, and the second die 320 and the second product region of the stamped substrate 400 Corresponding to 440, the third die 330 corresponds to the first non-product region 410 of the stamped substrate 400. Under the pressure of the punching machine, the first die 310 forms a first test pattern 450 in the second non-product area 430, and the second die 120 forms a second product pattern 422 in the second product area 440. Moreover, the first test pattern 260 formed by the first punching pattern and the first test pattern 250 formed by the second punching pattern overlap each other, and the first test pattern 250 formed by the first punching pattern is The second test patterns 260 formed by the second punching pattern are coincident with each other, and the first product pattern 421 formed by the first punching pattern is centrally symmetric with the second product pattern 441 formed by the second punching pattern.
第六步,檢測衝型基材400於第一非產品區域410第一次衝型時形成之第一測試圖案450與第二次衝型時形成之第二測試圖案460之相對位置及第一次衝型時於第二非產品區域430形成之第二測試圖案460與第二次衝型時於第二非產品區域430形成之第一測試圖案450之相對位置,從而判斷第一次衝型時於第一產品區域420形成之第一產品圖案421與第二次衝型時於第二產品區域440形成之第二產品圖案441之偏差是否滿足偏位公差之要求。 The sixth step is to detect the relative position and the first position of the first test pattern 450 formed by the punched substrate 400 during the first punching of the first non-product region 410 and the second test pattern 460 formed during the second punching. The second test pattern 460 formed in the second non-product area 430 and the relative position of the first test pattern 450 formed in the second non-product area 430 in the second shot type, thereby determining the first shot type Whether the deviation between the first product pattern 421 formed in the first product region 420 and the second product pattern 441 formed in the second product region 440 at the second punching type satisfies the requirement of the offset tolerance.
本實施例中,可採用目測之方式對形成之第一次衝型形成之第二測試圖案460與第二次衝型形成之第一測試圖案450及第一次衝型形成之第一測試圖案450與第二次衝型形成之第二測試圖案460之相對之位置關係進行檢測。當第一次衝型與第二次衝型之偏差滿足偏位公差之要求時,第二次衝型形成之第二測試圖案460之一圓孔與第一次衝型形成之第一測試圖案450四圓孔均不相交,即第二次衝型形成之第一測試圖案450之四圓孔環繞第一次衝型形成之第二測試圖案460之一圓孔;並且,第一次衝型形成之第二測試圖案460之一圓孔與第二次衝型形成之第一測試圖案450之四圓孔均不相交。 In this embodiment, the first test pattern 460 formed by the first punch forming and the first test pattern 450 formed by the second punching pattern and the first test pattern formed by the first punching type may be visually measured. The relative positional relationship between 450 and the second test pattern 460 formed by the second punch is detected. When the deviation between the first punching pattern and the second punching pattern satisfies the requirement of the offset tolerance, the first test pattern 450 formed by one of the second test pattern 460 formed by the second punching pattern and the first punching pattern is formed. The four circular holes are not intersected, that is, the four circular holes of the first test pattern 450 formed by the second punching pattern surround a circular hole of the second test pattern 460 formed by the first punching type; and, the first punching type is formed. One of the circular holes of the second test pattern 460 does not intersect with the four circular holes of the first test pattern 450 formed by the second punch.
當第一次衝型形成之第一產品圖案421與第二次衝型形成之第二產品圖案441之偏差不滿足偏位公差之要求時,第二次衝型形成之第二測試圖案460之一個圓孔與第一次衝 型形成之第一測試圖案450四圓孔中之至少一個相交,第一次衝型形成之第二測試圖案460之一圓孔與第二次衝型形成之第一測試圖案450之四圓孔中至少一相交。當兩次衝型形成之第二測試圖案沒有位於兩次形成之第一測試圖案之四圓孔中間亦是不滿足公差要求。 When the deviation between the first product pattern 421 formed by the first punching pattern and the second product pattern 441 formed by the second punching pattern does not satisfy the requirement of the offset tolerance, the second test pattern 460 formed by the second punching pattern is a round hole with the first rush At least one of the four circular holes formed by the first test pattern 450 is formed, and one of the first test pattern 460 formed by the first punching pattern and the fourth round hole formed by the first test pattern 450 of the second punching pattern are At least one intersects. When the second test pattern formed by the two punch patterns is not located between the four circular holes of the first formed test pattern, the tolerance requirement is not satisfied.
本技術方案中,第一衝模之第一衝子及第二衝模之第二衝子橫截面之形狀亦不限於本實施例提供之圓形,其亦可為正多邊形等形狀。第一衝子之個數亦不限於4個,其亦可為3個或者多於4個。另外,第一衝模可只包括一衝子,而第二衝模包括複數衝子。 In the technical solution, the shape of the cross section of the first punch of the first die and the second punch of the second die is not limited to the circular shape provided by the embodiment, and may also be a shape such as a regular polygon. The number of the first punches is not limited to four, and it may be three or more. Additionally, the first die may include only one punch and the second die includes a plurality of punches.
本技術方案提供之衝型偏差之檢測方法,只需於衝型模具設置與第一測試圖案及與第一測試圖案對應之第二測試圖案之衝模,將先後兩次進行衝型形成之第一測試圖案與第二測試圖案之位置關係進行檢測,從而便可判定兩次衝型之間之偏差是否滿足偏位公差之要求。本技術方案之偏差檢測方法可防止偏位公差不滿足要求之衝型產品流入後續之生產製程中,並且具有製程簡單及便於操作之特點。 The detection method of the punching deviation provided by the technical solution only needs to set the die of the punching die with the first test pattern and the second test pattern corresponding to the first test pattern, and the first step of forming the punching pattern twice The positional relationship between the test pattern and the second test pattern is detected, so that it can be determined whether the deviation between the two punch patterns satisfies the requirement of the offset tolerance. The deviation detection method of the technical solution can prevent the punched product whose offset tolerance does not meet the requirements from flowing into the subsequent production process, and has the characteristics of simple process and easy operation.
綜上所述,本發明確已符合發明專利之要件,遂依法提出專利申請。惟,以上所述者僅為本發明之較佳實施方式,自不能以此限制本案之申請專利範圍。舉凡熟悉本案技藝之人士援依本發明之精神所作之等效修飾或變化,皆應涵蓋於以下申請專利範圍內。 In summary, the present invention has indeed met the requirements of the invention patent, and has filed a patent application according to law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Equivalent modifications or variations made by persons skilled in the art in light of the spirit of the invention are intended to be included within the scope of the following claims.
100、300‧‧‧衝型模具 100,300‧‧‧ punching mould
110、310‧‧‧第一衝模 110, 310‧‧‧ first die
111、311‧‧‧第一衝子 111, 311‧‧‧ first punch
120、320‧‧‧第二衝模 120, 320‧‧‧second die
130、330‧‧‧第三衝模 130, 330‧‧‧ third die
131、331‧‧‧第二衝子 131,331‧‧‧second punch
200、400‧‧‧衝型基材 200,400‧‧‧ punched substrate
210、410‧‧‧第一非產品區域 210, 410‧‧‧ first non-product area
220、420‧‧‧第一產品區域 220, 420‧‧‧ first product area
221、421‧‧‧第一產品圖案 221, 421‧‧‧ first product pattern
230、430‧‧‧第二非產品區域 230, 430‧‧‧ second non-product area
240、440‧‧‧第二產品區域 240, 440‧‧‧Second product area
241、441‧‧‧第二產品圖案 241, 441‧‧‧ second product pattern
250、450‧‧‧第一測試圖案 250, 450‧‧‧ first test pattern
260、460‧‧‧第二測試圖案 260, 460‧‧‧ second test pattern
圖1係本技術方案第一實施例提供之衝型模具之示意圖。 1 is a schematic view of a punching die provided by a first embodiment of the present technical solution.
圖2係本技術方案第一實施例提供之衝型基材之示意圖。 2 is a schematic view of a stamped substrate provided by the first embodiment of the present technical solution.
圖3係本技術方案第一實施例提供之對衝型基材第一次衝型後之示意圖。 FIG. 3 is a schematic view showing the first punching type of the punched substrate provided by the first embodiment of the present technical solution.
圖4係本技術方案第一實施例提供之對衝型基材第二次衝型後偏位公差滿足要求之示意圖。 FIG. 4 is a schematic view showing that the offset tolerance of the second punching type of the punched substrate provided by the first embodiment of the present technical solution satisfies the requirements.
圖5係本技術方案第一實施例提供之對衝型基材第二次衝型後偏位公差不滿足要求之示意圖。 FIG. 5 is a schematic view showing that the offset tolerance of the second type of the punched substrate provided by the first embodiment of the present technical solution does not satisfy the requirement.
圖6係本技術方案第一實施例提供之對衝型基材第二次衝型後偏位公差不滿足要求之另一示意圖。 FIG. 6 is another schematic diagram of the offset tolerance of the second type of punched substrate provided by the first embodiment of the present technical solution.
圖7係本技術方案第二實施例提供之衝型模具之示意圖。 FIG. 7 is a schematic view of a punching mold provided by a second embodiment of the present technical solution.
圖8係本技術方案第二實施例提供之衝型基材之示意圖。 FIG. 8 is a schematic view of a stamped substrate provided by a second embodiment of the present technical solution.
圖9係本技術方案第二實施例提供之對衝型基材第一次衝型後之示意圖。 FIG. 9 is a schematic view showing the first punching type of the punched substrate provided by the second embodiment of the present technical solution.
圖10係本技術方案第二實施例提供之對衝型基材第二次衝型後之示意圖。 FIG. 10 is a schematic view showing the second punching type of the punched substrate provided by the second embodiment of the present technical solution.
210‧‧‧第一非產品區域 210‧‧‧First non-product area
220‧‧‧第一產品區域 220‧‧‧First product area
221‧‧‧第一產品圖案 221‧‧‧ first product pattern
230‧‧‧第二非產品區域 230‧‧‧Second non-product area
240‧‧‧第二產品區域 240‧‧‧Second product area
241‧‧‧第二產品圖案 241‧‧‧Second product pattern
250‧‧‧第一測試圖案 250‧‧‧First test pattern
260‧‧‧第二測試圖案 260‧‧‧Second test pattern
Claims (10)
Priority Applications (1)
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TW98141895A TWI381921B (en) | 2009-12-08 | 2009-12-08 | Punching method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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TW98141895A TWI381921B (en) | 2009-12-08 | 2009-12-08 | Punching method |
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TW201119818A TW201119818A (en) | 2011-06-16 |
TWI381921B true TWI381921B (en) | 2013-01-11 |
Family
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TW98141895A TWI381921B (en) | 2009-12-08 | 2009-12-08 | Punching method |
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TW (1) | TWI381921B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107222973A (en) * | 2017-06-16 | 2017-09-29 | 苏州市华扬电子股份有限公司 | A kind of method for quickly producing qualified flexible PCB |
Citations (5)
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JP2002192276A (en) * | 2000-12-22 | 2002-07-10 | Xenesys Inc | Thermal conductive element production method |
JP2005121390A (en) * | 2003-10-14 | 2005-05-12 | Jsr Corp | Circuit board inspection device |
TWI239089B (en) * | 2000-03-24 | 2005-09-01 | Sanyo Electric Co | Manufacturing process of semiconductor device |
TW200534752A (en) * | 2004-03-03 | 2005-10-16 | Sanyo Electric Co | Manufacturing method of multilayer substrate |
TW200701844A (en) * | 2005-06-27 | 2007-01-01 | Beac Co Ltd | Method for punching printed circuit board, printed circuit board, board for boc and punching device |
-
2009
- 2009-12-08 TW TW98141895A patent/TWI381921B/en not_active IP Right Cessation
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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TWI239089B (en) * | 2000-03-24 | 2005-09-01 | Sanyo Electric Co | Manufacturing process of semiconductor device |
JP2002192276A (en) * | 2000-12-22 | 2002-07-10 | Xenesys Inc | Thermal conductive element production method |
JP2005121390A (en) * | 2003-10-14 | 2005-05-12 | Jsr Corp | Circuit board inspection device |
TW200534752A (en) * | 2004-03-03 | 2005-10-16 | Sanyo Electric Co | Manufacturing method of multilayer substrate |
TW200701844A (en) * | 2005-06-27 | 2007-01-01 | Beac Co Ltd | Method for punching printed circuit board, printed circuit board, board for boc and punching device |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN107222973A (en) * | 2017-06-16 | 2017-09-29 | 苏州市华扬电子股份有限公司 | A kind of method for quickly producing qualified flexible PCB |
CN107222973B (en) * | 2017-06-16 | 2020-02-14 | 苏州市华扬电子股份有限公司 | Method for rapidly producing qualified flexible circuit board |
Also Published As
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TW201119818A (en) | 2011-06-16 |
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