TWI377732B - Multiband bandpass filter with transmission-zeros and substrate structure thereof - Google Patents

Multiband bandpass filter with transmission-zeros and substrate structure thereof Download PDF

Info

Publication number
TWI377732B
TWI377732B TW98102901A TW98102901A TWI377732B TW I377732 B TWI377732 B TW I377732B TW 98102901 A TW98102901 A TW 98102901A TW 98102901 A TW98102901 A TW 98102901A TW I377732 B TWI377732 B TW I377732B
Authority
TW
Taiwan
Prior art keywords
resonator
layer
capacitor
wiring
inductor
Prior art date
Application number
TW98102901A
Other languages
Chinese (zh)
Other versions
TW201029255A (en
Inventor
Tzyy Sheng Horng
Kuan Chang Lin
Chien Hsiang Huang
Hui Hsiang Huang
Sung Mao Wu
Original Assignee
Univ Nat Sun Yat Sen
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Nat Sun Yat Sen filed Critical Univ Nat Sun Yat Sen
Priority to TW98102901A priority Critical patent/TWI377732B/en
Publication of TW201029255A publication Critical patent/TW201029255A/en
Application granted granted Critical
Publication of TWI377732B publication Critical patent/TWI377732B/en

Links

Landscapes

  • Filters And Equalizers (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Description

、發明說明: 【發明所屬之技術領域】 種帶通濾波器,特別係有關 多頻帶通濾波器。 本發明係有關於一 於一種具有傳輸零點之 【先前技術】 習知雙頻帶㈣波11常用的設計方式即是連接 兩個:同頻帶操作之帶通遽波器,其係將兩個不同 頻帶操作之滤波$結合達到雙頻通帶之特性,但是 此架構所組成之雙頻帶通遽波器之佔用面積為一般 早一頻帶操錢波器的兩倍,且為了㈣波器具備 良好的頻率選擇特性,必須在單—錢器上使用三 :諧振器,因此整體電路必須使用六個諧振器而使 =凡件尺寸過於龐大,且過多的元件容易造成電路 知乾過大。再者n器通常是使用傳輸零點來降 低系統之間的干擾,抑制及影像雜訊(Image frequency),而設計傳輸零點的方法如台灣專利公告 號第1269481“多層陶瓷技術濾波器及其結構,,其揭 示一種使用多個諧振器產生多個傳輸零點並同時合 成濾波器的方法,此架構共使用四種諧振器分別產 生四個傳輸零點,雖然可針對想要壓抑的信號頻率 範圍’變動元件值而調整傳輸零點之頻率位置使設 计更彈性化,但諧振器之元件值仍然需配合濾波器 之通帶頻率範圍作設計,且為了達到良好的禁帶衰 減量必須使用過多的諧振器產生傳輪零點,將使得 1377732 整體電路尺寸變大β 【發明内容】 點之之主要目的係在於提供—種具有傳輸 頻:通遽波器’其係包含有一輸入端 出鈿、一帶通濾波單元、 赛 至^ 一串聯回授諧振器c Γ器,該帶通攄波單元係包, 有電性連接該輸入端之第一譜振器及一與: 譜振器並聯之% ^ 楚一扯益,該第一諧振器係具有一 第一目自振器電感及一鱼兮筮一 一諧振器雷六 /、第一括振器電感並聯之苐 °電令,忒第二諧振器係 電感及一與該第-增枳哭φa ^弟一々振态 容,…b 電感並聯之第二譜振器電 :产:白振器係電性連接該輸出端,該串聯 ::: =與該帶通遽波單元串聯,該串聯回: 係具有—串聯回授諧振器電容及-與該串把 回扠諧振器電容並聯之串聯回、 " 聯麵合譜振器係與該帶通,皮:::電感’該並 ::電:t一電性連接該輪出端之並聯搞合諧振器 ,:本發明係藉由將該帶通瀘波單元 ==控制高頻第二通帶頻率範圍,並J 聯搞合諧振器以合成出多個傳輸零點以形 用::、杜Γ輸零點之多頻帶通濾波器’且具有所使 =件數較少,容易達到電路面積縮減及減少多 餘之疋件而造成損耗之功效。 5 1377732 本發明之次一目的係在於提供一種具有傳輸零 點之多頻帶通濾、波器之基板結構,其係包含有一下 接地層、一形成於該下接地層上之串聯回授諧振器 電容層、一形成於該串聯回授諧振器電容層上之串 聯回授諧振器電感層、一形成於該串聯回授諧振器 電感層上之諧振器電.感層、一形成於該諧振器電减 層上之譜振器電容㈣、一形成於該譜振器電容積 層上之共用金屬層、一形成於該共用金屬層上之電 極層、一形成於該電極層上之匹配電容層、一形成 於該匹配電容層上之並聯耦合諧振器電容積層一 形成於該並聯耦合諧振器電容積層上之並聯耦合諧 振器電感層;以及一形成於該並聯耦合諧振器;感 層上之上接地層,該譜振器電容積層係包含-上諸 層及一下諧振器電容層,且該下諧振器電 ^ ^〖生連接该共用金屬層,該電極層係具有一 哕丘用仝ί輸出電極,該匹配電容層係電性連接 二::金屬層’該並聯耦合諧振器電容積層係具有 声聯:合譜振器電容層及一下並聯轉合諧振器 配;二田發明之該第—諧振器電容係與該輸入匹 該第:二Ϊ共:金屬層之—第一共用金屬佈線且 金屬1電谷係與該輸出匹配電容共用該共用 器電容係藉由;;2:佈線,且該串聯回授譜振 地佈線所形成,心 譜振11電容佈線與該下接 肜成,因此可減少金屬層設置數目,此外, 6 1377732 若欲達到通帶增加之目的,僅需以該具有傳輸零點 之多頻帶通濾波器之基板結構為基礎,直接在該具 有傳輸零點之多頻帶通濾波器之基板結構垂直方向 增加該串聯回授諧振器與該並聯回授諧振器之數目 即可,因此不會因為通帶之增加而導致電路面積增 加。 【實施方式】DESCRIPTION OF THE INVENTION: TECHNICAL FIELD OF THE INVENTION A band pass filter is particularly concerned with a multi-band pass filter. The present invention relates to a prior art having a transmission zero point. A conventional design method of a conventional dual-band (four) wave 11 is to connect two: band-pass choppers operating in the same frequency band, which are two different frequency bands. The filtering of the operation is combined with the characteristics of the dual-frequency passband, but the dual-band pass chopper composed of this architecture occupies twice the area of the normal one-band operation, and has a good frequency for the (four) wave. To select characteristics, three: resonators must be used on the single-money machine, so the whole circuit must use six resonators so that the size of the parts is too large, and too many components are likely to cause the circuit to be too large. In addition, n-devices usually use transmission zeros to reduce interference, suppression and image frequency between systems, and the method of designing transmission zeros is as described in Taiwan Patent Publication No. 1268481 "Multilayer Ceramic Technology Filters and Their Structures. , which discloses a method of generating a plurality of transmission zeros and simultaneously synthesizing filters using a plurality of resonators, which use four resonators to generate four transmission zeros, respectively, although the frequency range of the signal to be suppressed can be 'variable components' Adjusting the frequency position of the transmission zero makes the design more flexible, but the component values of the resonator still need to be designed with the passband frequency range of the filter, and in order to achieve good bandgap attenuation, too many resonators must be used. Passing the zero point will make the overall circuit size of the 1377732 become larger. [Inventive content] The main purpose of the point is to provide a transmission frequency: the pass filter includes an input port and a band pass filter unit. Race to ^ a series feedback resonator c ,, the band pass chopper unit package, electrically connected to the input end A spectrum oscillator and a pair: Spectrometer in parallel with % ^ Chu Yihui, the first resonator has a first-mesh self-oscillator inductance and a fish-to-one resonator Lei Liu /, first括 电 电 电 电 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒 忒Electrically connecting the output terminal, the series::: = is connected in series with the bandpass chopper unit, and the series is: having a series-receiving resonator capacitance and - connecting in series with the string-turning resonator capacitance Back, " joint surface spectroscopy system and the band pass, skin::: inductance 'the sum:: electricity: t is electrically connected to the parallel connection of the round end of the resonator, the invention is by The bandpass chopper unit == controls the high frequency second passband frequency range, and the J combines the resonators to synthesize a plurality of transmission zeros to form::, multi-band pass filter of the rhododendron zero point' And it has the effect that the number of pieces is small, and it is easy to achieve the effect of reducing the circuit area and reducing the excess of the pieces. 5 1377732 The present invention The object of the invention is to provide a multi-band pass filter and wave filter substrate structure having a transmission zero point, which comprises a lower ground layer, a series feedback resonator capacitor layer formed on the lower ground layer, and a series formed in the series Retrieving a series feedback resonant inductor layer on the resonator capacitor layer, a resonator electrical sensing layer formed on the series feedback resonator inductance layer, and a spectral oscillator formed on the resonator electrical subtraction layer a capacitor (4), a common metal layer formed on the electric volume layer of the spectrometer, an electrode layer formed on the common metal layer, a matching capacitor layer formed on the electrode layer, and a matching capacitor layer formed on the capacitor layer a parallel coupled resonator electrical volume layer formed on the parallel coupled resonator inductive layer of the parallel coupled resonator electrical volume layer; and a parallel coupled resonator formed on the sensing layer; a ground layer above the sensing layer, the spectral volume of the spectral oscillator The upper resonator layer and the lower resonator capacitor layer are connected, and the lower resonator electrically connects the common metal layer, and the electrode layer has a dome electrode and an output electrode, the matching The electrical connection of the capacitance layer is two:: the metal layer 'the parallel volume coupling resonator electric volume layer has the sound connection: the combined spectrum resonator layer and the next parallel conversion resonator; the second invention of the resonator-resonator capacitance system And the input: the second common: the metal layer - the first common metal wiring and the metal 1 electric valley and the output matching capacitor share the shared capacitor is by; 2: wiring, and the serial feedback The spectrally grounded wiring is formed, and the cardiac spectrum 11 capacitor wiring is connected with the lower connection, so that the number of metal layers can be reduced. In addition, 6 1377732, if the purpose of increasing the pass band is required, only the transmission zero point is required. Based on the substrate structure of the band pass filter, the number of the series feedback resonator and the parallel feedback resonator can be increased directly in the vertical direction of the substrate structure of the multi-band pass filter having the transmission zero point, so The increase in passband leads to an increase in circuit area. [Embodiment]

請參閱第1圖,依據本發明之一具體實施例係 揭不一種具有傳輸零,點之多頻帶通濾波器1〇,其係 包含有一輸入端P卜一輸出端P2、一帶通濾波單元 11、至少一串聯回授諧振器12以及至少一並聯耦合 諧振器13,該帶通濾波單元丨i係包含有一電性連 接该輸入端P1之第一諧振器Ua、一與該第一 器1U並聯之第二諧振器llb、一輸入匹配電容°C1;Referring to FIG. 1 , according to an embodiment of the present invention, a multi-band pass filter having a transmission zero and a point is included, which includes an input terminal P, an output terminal P2, and a band pass filtering unit 11. The at least one series-connected resonator 12 and the at least one parallel-coupled resonator 13 include a first resonator Ua electrically connected to the input terminal P1, and a parallel connection with the first device 1U The second resonator 11b, an input matching capacitor °C1;

:輸出匹配電容C2及一耦合電感u,該第一諧振 器1。1 a係具有一第一諧振器電感L 2及一與該第一諧 振器電感L2並聯之第一諧振器電容c3,該第二諧 振器lib係具有一第二諧振器電感L3及一與該第二 諧振器電感L3並聯之第二諧振器電容c4,且該第 二譜振器m係電性連接該輸出端p2,該輸入匹配 電容ci兩端係分別電性連接該輸人端ρι =振器1U,該輸出匹配電容〇兩端係分別電性連 接該輸出端P2及該第二諸振器m,該輕 -端係電性連接該第一諸振器Ua及該輸入二 7 1377732 而另-端係電性連接該第二讀振器Ub及該 輪出匹配電容C2,該串聯回授諧振器12係與該帶 通濾波單元11串聯,該串聯回授諧振器12係^有 :串:回授諧振器電容C5及-與該串聯回 器电谷¢5並聯之串聯回授諧振器電感 a ’在本實An output matching capacitor C2 and a coupled inductor u, the first resonator 1. 1 a having a first resonator inductor L 2 and a first resonator capacitor c3 connected in parallel with the first resonator inductor L2, The second resonator lib has a second resonator inductor L3 and a second resonator capacitor c4 connected in parallel with the second resonator inductor L3, and the second oscillator m is electrically connected to the output terminal p2. The two ends of the input matching capacitor ci are respectively electrically connected to the input end ρι = the vibrator 1U, and the two ends of the output matching capacitor 电 are electrically connected to the output end P2 and the second vibrator m respectively. The end is electrically connected to the first vibrator Ua and the input two 7 1377732, and the other end is electrically connected to the second vibrator Ub and the wheel matching capacitor C2, and the series feedback resonator 12 is coupled with The band pass filtering unit 11 is connected in series, and the series feedback resonator 12 has: a string: a feedback resonator capacitor C5 and a series feedback resonator inductance a 'in parallel with the series return electric grid 5 real

她例中,該串聯回授諧振器12之一端係接地,該並 聯耦合諧振器13係與該帶通濾波單元u並聯 並聯耦合諧振器係具有一電性連接該輸入#端’= 之並聯細振器電容C6及一電性連接該輸出端 P2之並聯耦合諧振器電“5,且該並聯耦合諧振哭 電容C6係與該並聯辑合諧振器電感L5串聯,在 實施例中’該並聯衫譜振器13之該並軸合譜振 器電谷C6係電性連接該輸人匹配電容q,該並聯 輕合諧振器電《L5係、電性連接該輸出匹配電容 C2。本發明係、將該帶通遽波單幻1結合該串聯回授 諧振器U與該並聯輕合譜振器13,其係以該串聯 回授諧振器12控制高頻第二通帶頻率範圍 整體電路之導納參數(Y_parame㈣之γΐ2為零時, 因為《無法通過而·產生傳輸零點之電性特點以進 行電路之Υ12振幅與相位頻率響應之觀察,使得咳 =遽波單元11與該並軸合諧振II Π在特定頻 率點上純大小相同但相位為反相使Υ12為零 f專輸零點’因此具有所使用之元件數較少,容易 達到電路面積縮減及減少多餘之元件而造成損耗之 8 1377732 功效。 此外,請參閱第2圖,其係為本發明之另一具 體實施例,其係將該帶通遽波單元1 I結合複數個串 聯回授諧振器12以及複數個並聯耦合諧振器13, 以I成夕個通7JT设小》且藉由結合該些串聯回授譜 振益12及該些並聯耦合諧振器13,達到控制多個 高頻通帶的頻率並形成多個傳輸零點之目的,因而 形成高選擇度之多頻通帶。 # 接著’請參閱第3及4圖’依據本發明之一具 體實施例係揭示一種具有傳輸零點之多頻帶通濾波 器之基板結構100,其係包含有一下接地層11〇a、 一形成於該下接地層11 〇a上之串聯回授諧振器電容 層120、一形成於該串聯回授譜振器電容層12〇上 之串聯回授諧振器電·感層130、一形成於該串聯回 授諧振器電感層130上之諧振器電感層14〇、一形 成於該諸振器電感層140上之諧振器電容積層 籲 150、一形成於該諧振器電容積層150上之共用金屬 層M、一形成於該共用金屬層μ上之電極層16〇、 一形成於該電極層160上之匹配電容層170、一形 成於該匹配電容層170上之並聯耦合諧振器電容積 層180、一形成於該並聯耦合諧振器電容積層ι8〇 上之並聯耦合諧振器電感層190;以及一形成於該 並聯耦合错振器電感層190上之上接地層11 〇b,該 下接地層110a係具有一下接地佈線u〇c,該串聯回 9 1377732 授諧振器電容層120係具有一串聯回授諧振器電容 佈線120a’該下接地佈線110c與該串聯回授諧振器 電容佈線120a係形成一串聯回授諧振器電容A1, 該串聯回授諸振器電感層130係具有一串聯回授諧 振器電感佈線130a及一耦合電感佈線i3〇b,並以一 第一導電柱B1連接該串聯回授諧振器電感佈線 130a之一第一端130c與該下接地佈線11〇c,請再 參閱第1及3圖’該串聯回授諧振器電容A1係與該 串聯回授諧振器電感佈線13〇a形成一串聯回授諧振 器12 ’該諧振器電感層140係具有一第一諧振器電 感佈線141及一第二諧振器電感佈線142,該諧振 器電容積層150係包含一上諧振器電容層15〇a及一 下諧振器電容層15〇b,該耦合電感佈線i3〇b係電 性連接至該譜振器電感層丨4〇與該下諧振器電容層 150b,該上諧振器電容層15〇a係具有一第一上諧振 器電容佈線150c及一第二上諧振器電容佈線 150d,該下諧振器電容層i5〇b係具有一第一下譜振 器電容佈線150e及一第二下諧振器電容佈線i5〇f, 且該下諧振器電容層150b係電性連接該共用金屬 層M’並以一第二導電柱B2連接該第一諧振器電 感佈線141之一端i4ia、該第一下諧振器電容佈線 I50e與該耦合電感佈線130b之一端13〇d,及以一 第三導電柱B3連接該第二諧振器電感佈線142之一 端142a、該第二下諧振器電容佈線15〇f與該耦合電 10 1377732 感佈線130b之另一端i3〇e ,該共用金屬層M係具 有一第一共用金屬佈線Ml及一第二共用金屬佈線 M2,並以一第四導電柱B4連接該第一諧振器電感 佈線141之另一端141b、該第一上諧振器電容佈線 150c與該串聯回授諧振器電感佈線u〇a之一第二 端130f,及以一第五導電柱B5連接該第二諧振器 電感佈線142之另一端142b、該第二上諧振器電容 佈線150d與該串聯回授諧振器電感佈線n〇a之一 籲 第三端130g,且該第四導電柱B4及該第五導電柱 B5係延伸至該串聯芎授諧振器電容層丨2〇,並以一 第六導電柱B6連接該第一共用金屬佈線M1與該第 一下諧振器電容佈線150e,及以一第七導電柱B7 連接該第一共用金屬佈線M2與該第二下譜振器電 容佈線150f,該第一上諧振器電容佈線15〇c、該第 一下諧振器電容佈線150e及該第一共用金屬佈線 • Ml係形成一第一諧振器電容A2,該第二上諧振器 電容佈線150d、該第二下諧振器電容佈線15〇f及該 第一共用金屬佈線]VI2係形成一第二譜振器電容 A3,請再參閱第丨及3圖,該第一諧振器電感佈線 Ml與該第一諧振器電容A2係形成一第一諧振器 Ha’該第二諧振器電感佈線142與該第二諧振器電 谷A3係形成一第二諧振器11 b,該串聯回授諧振器 12係電性連接該第一諧振器11a與該第二諧振器 Ub,該電極層ι6〇係具有一輸入電極ι61及一輸出In one example, one end of the series feedback resonator 12 is grounded, and the parallel coupled resonator 13 is connected in parallel with the band pass filter unit u. The parallel coupled resonator system has an electrical connection to the parallel connection of the input # terminal '= The vibrator capacitor C6 and a parallel coupled resonator electrically connected to the output terminal P2 are electrically "5, and the parallel coupled resonant crying capacitor C6 is connected in series with the parallel coupled resonator inductor L5. In the embodiment, the parallel shirt The parallel-coupled spectral oscillator electric valley C6 of the spectrum oscillator 13 is electrically connected to the input matching capacitor q, and the parallel light-receiving resonator is electrically connected to the output matching capacitor C2. The invention is Combining the band pass chopping single phantom 1 with the series feedback resonator U and the parallel light multiplexer 13 for controlling the overall circuit of the high frequency second pass band frequency range by the series feedback resonator 12 When the γΐ2 of the Y_parame(4) is zero, because of the inability to pass the electrical characteristics of the transmission zero to observe the amplitude and phase frequency response of the circuit, the cough=chopping unit 11 and the parallel axis resonance II纯 pure size phase at a specific frequency point However, the phase is inverting so that Υ12 is zero and f is dedicated to the zero point. Therefore, the number of components used is small, and it is easy to achieve the circuit area reduction and reduce the excess components to cause the loss of 8 1377732. In addition, please refer to Figure 2, It is another embodiment of the present invention, which combines the band pass chopper unit 1 I with a plurality of series feedback resonators 12 and a plurality of parallel coupled resonators 13 to set a small 7JT And by combining the series feedback spectrum excitation 12 and the parallel coupled resonators 13, the purpose of controlling the frequencies of the plurality of high frequency passbands and forming a plurality of transmission zeros is achieved, thereby forming a high selectivity multi-frequency Passing through. #Next' Please refer to Figures 3 and 4'. In accordance with an embodiment of the present invention, a substrate structure 100 having a multi-band pass filter for transmitting zeros is disclosed, which includes a lower ground layer 11a, a series feedback resonator capacitor layer 120 formed on the lower ground layer 11 〇a, a series feedback resonator electrical sensing layer 130 formed on the series feedback resonator capacitor layer 12 、, forming a In-line feedback resonance a resonator inductor layer 14 on the inductor layer 130, a resonator dielectric layer 150 formed on the inductor layer 140, and a common metal layer M formed on the resonator dielectric layer 150. An electrode layer 16〇 on the common metal layer μ, a matching capacitor layer 170 formed on the electrode layer 160, and a parallel coupled resonator dielectric layer 180 formed on the matching capacitor layer 170 are formed in the parallel a parallel coupled resonator inductor layer 190 coupled to the resonator electrical volume layer ι8 ;; and a ground layer 11 〇b formed on the parallel coupled oscillating inductor layer 190, the lower ground layer 110a having a lower ground wiring 〇c, the series back 9 1377732 resonator capacitor layer 120 has a series feedback resonator capacitor wiring 120a', the lower ground wiring 110c and the series feedback resonator capacitor wiring 120a form a series feedback resonator capacitance A1, the series feedback oscillator inductor layer 130 has a series feedback resonator inductor wiring 130a and a coupled inductor wiring i3〇b, and is connected to the series feedback resonator by a first conductive pillar B1. The first end 130c of the sense wiring 130a and the lower ground wiring 11〇c, please refer to FIGS. 1 and 3 respectively. The series feedback resonator capacitor A1 forms a line with the series feedback resonator inductor wiring 13〇a. The series resonant resonator 12' has a first resonator inductive wiring 141 and a second resonator inductive wiring 142. The resonator electrical volume layer 150 includes an upper resonator capacitive layer 15a And a resonator capacitor layer 15〇b, the coupled inductor wiring i3〇b is electrically connected to the spectrum inductor layer 丨4〇 and the lower resonator capacitor layer 150b, the upper resonator capacitor layer 15〇a Having a first upper resonator capacitor wiring 150c and a second upper resonator capacitor wiring 150d, the lower resonator capacitor layer i5〇b has a first lower spectral resonator capacitor wiring 150e and a second lower resonator capacitor a wiring i5〇f, and the lower resonator capacitor layer 150b is electrically connected to the common metal layer M′ and connected to one end i4ia of the first resonator inductor wiring 141 by a second conductive pillar B2, the first lower resonator One end of the capacitor wiring I50e and the coupled inductor wiring 130b d, and connected to one end 142a of the second resonator inductor wiring 142, the second lower resonator capacitor wiring 15〇f, and the other end i3〇e of the coupling power 10 1377732 sensing wiring 130b by a third conductive pillar B3, The common metal layer M has a first common metal wiring M1 and a second common metal wiring M2, and is connected to the other end 141b of the first resonator inductor wiring 141 by a fourth conductive pillar B4, and the first upper resonance. The capacitor capacitor wiring 150c and the second end 130f of the series feedback resonator inductor wiring u〇a, and the other end 142b of the second resonator inductor wiring 142 connected to the second conductive pillar B5, the second upper resonance The capacitor wiring 150d and the series feedback resonator inductor wiring n〇a are called to the third end 130g, and the fourth conductive pillar B4 and the fifth conductive pillar B5 are extended to the series capacitor resonator layer. 2〇, and the first common metal wiring M1 and the first lower resonator capacitor wiring 150e are connected by a sixth conductive pillar B6, and the first common metal wiring M2 and the second are connected by a seventh conductive pillar B7. Lower spectrum resonator capacitance wiring 150f, the first upper resonance The capacitor wiring 15〇c, the first lower resonator capacitor wiring 150e, and the first common metal wiring M1 form a first resonator capacitor A2, the second upper resonator capacitor wiring 150d, and the second lower resonator The capacitor wiring 15〇f and the first common metal wiring]VI2 form a second spectrum resonator capacitor A3. Please refer to FIGS. 3 and 3 again, the first resonator inductor wiring M1 and the first resonator capacitor A2. Forming a first resonator Ha', the second resonator inductor wiring 142 and the second resonator grid A3 form a second resonator 11b, and the series feedback resonator 12 is electrically connected to the first The resonator 11a and the second resonator Ub, the electrode layer 具有6 has an input electrode ι61 and an output

11 1377732 電極162,該匹配電容層17〇係電性連接該共用金 屬層Μ,該匹配電容層170係具有一輸入匹配電容 佈線171及一輸出匹配電容佈線172,其係以—第 八導電柱Β8連接該輸入匹配電容佈線171與該第一 共用金屬佈線Ml ’及以—第九導電柱69連接該輸 出匹配電容佈線172與該第二共用金屬佈線M2,該 輸入匹配電容佈線Π1、該輸入電極161與該第一 共用金屬佈線Ml係形成一輸入匹配電容八4,該輸 出匹配電容佈線172、該輸出電極162與該第二共 用金屬佈線M2係形成一輸出匹配電容A5,請再來 閱第1及3圖,該第一諧振器Ua、該第二諧振器 llb、該輪入匹配電容A4、該輸出匹配電容A5及該 耦合電感佈線130b係形成一帶通濾波單元u,★亥 並聯耦合諧振器電容積層18〇係具有一上並聯耦= 譜振器電容層18Ga及-下並聯輕合譜振器電容層 180b,該上並聯耦合諧振器電容層18如係具有至少 一上並聯耦合諧振器電容佈線18〇c,該下並聯耦人 譜振器電容層祕係具有至少—下並聯輕合譜振 器電容佈線180d,並以一第十導電柱B1〇連接爷下 並聯耦合諧振器電容佈線18〇d與該輸入電極16\, 及以-第十-導電柱B11連接該下並聯耦合諧振器 電容佈線180d與該缔出電極162,該上並聯耦合諧 tm’與該下並㈣合諧振器電容佈線 180d係形成一並聯耦合諧振器電容A6,該並聯耦合 1377732 諧振器電感層19π&θ^_ 、 〇係具有一並聯耦合諧振器電感佈 線191並以—第十二導電柱Β12連接該上並聯福 t譜振器電容佈線咖與該並⑽合諧振器電感佈 :丨91之端191a’及以一第十三導電柱B13連接 3亥上並聯輕合譜振器電容佈線職與該並聯鶴合諸 振器電感佈線191之另—端㈣,請再參閱第!及 3圖’該並聯#合雜器電感佈線191係與該並聯 耦口°白振裔電谷A6形成一並聯輕合譜振器13,該 並聯耦合諧振器13係連接該輸入電極161與該輸出 電極⑹^上接地層11Gb係具有—上接地佈線 110d且覆蓋於該並聯耦合諧振器電感層上方以 形成該具有傳輸零點之乡㈣通缝 丨00。由於,發明之該第-諸振器電容則=: 入匹配電谷A4共用該共用金屬層M之該第一共用 金屬佈線且該第二諧振器電容A3係與該輸“配 電容A5共用該共用金屬層M之該第二共用金屬 線’因此可減少金屬層設置數目,且該串聯回授批 振器電容A1係藉由該串聯回授諧振器電容佈、: 120a與該下接地佈線11〇c所形成,故又減少—金 層之設置’此外’若欲達到通帶增加之目的,僅· 以該具有傳輸零點之多頻帶通濾波器之基板結= 100為基礎,直接在該具有傳輸零點之多頻帶= 波器之基板結構100垂直方向增加該串聯回於if 器12與該並聯耦合諧振器13之數目即可,因又= 13 1377732 會因為通帶之增加而導致電路面積增加。11 1377732 electrode 162, the matching capacitor layer 17 is electrically connected to the common metal layer Μ, the matching capacitor layer 170 has an input matching capacitor wiring 171 and an output matching capacitor wiring 172, which is connected to the eighth conductive pillar Β8 is connected to the input matching capacitor wiring 171 and the first common metal wiring M1 ′ and the ninth conductive pillar 69 is connected to the output matching capacitor wiring 172 and the second common metal wiring M2, the input matching capacitor wiring Π1, the input The electrode 161 and the first common metal wiring M1 form an input matching capacitor VIII. The output matching capacitor wiring 172, the output electrode 162 and the second common metal wiring M2 form an output matching capacitor A5. Please read it again. In the first and third figures, the first resonator Ua, the second resonator 11b, the wheel-in matching capacitor A4, the output matching capacitor A5, and the coupled inductor wiring 130b form a band-pass filtering unit u. The resonator electrical volume layer 18 has an upper parallel coupling = a spectral resonator capacitive layer 18Ga and a lower parallel coupled light resonant resonator capacitor layer 180b, the upper parallel coupled resonator capacitive layer 18 such as a tie At least one upper and lower parallel coupled resonator capacitor wiring 18〇c, the lower parallel coupled human spectrum oscillator capacitor layer secret system has at least—lower parallel light bridge resonator capacitor wiring 180d, and connected with a tenth conductive column B1〇 The lower parallel coupled resonator capacitor wiring 18〇d is connected to the input electrode 16\, and the -10th conductive pillar B11 is connected to the lower parallel coupled resonator capacitor wiring 180d and the output electrode 162, and the upper parallel coupling harmonic tm' Forming a parallel coupled resonator capacitor A6 with the lower (4) resonator capacitor wiring 180d, the parallel coupling 1377732 resonator inductor layer 19π & θ^_, 〇 has a parallel coupled resonator inductor wiring 191 and The twelve conductive column Β12 is connected to the upper parallel parallel volt-amplifier capacitor wiring coffee and the parallel (10) resonator inductor fabric: 丨91 end 191a' and a thirteenth conductive column B13 connected to the 3 hai parallel light spectrum The vibrator capacitor wiring is the other end (four) of the parallel connection of the inductor and the inductor wiring 191, please refer to the first! And the figure 3 'the parallel # mixer inductor wiring 191 and the parallel coupling ° white vibration electric valley A6 form a parallel light spectrum oscillator 13, the parallel coupling resonator 13 is connected to the input electrode 161 and the output electrode (6) The upper ground layer 11Gb has an upper ground wiring 110d and overlies the inductive layer of the parallel coupled resonator to form the town (four) through seam 00 having the transmission zero point. Since the first-peristor capacitor of the invention is: the in-matching electric valley A4 shares the first common metal wiring of the common metal layer M and the second resonator capacitance A3 is shared with the input “reserving capacitor A5” The second common metal line of the common metal layer M can thus reduce the number of metal layer settings, and the series feedback resonator capacitance A1 is fed back by the series capacitor capacitor: 120a and the lower ground wiring 11 〇c is formed, so it is reduced - the setting of the gold layer 'in addition' is intended to achieve the purpose of increasing the pass band, only based on the substrate junction of the multi-band pass filter having the transmission zero point = 100, directly The frequency band of the transmission zero point = the substrate structure 100 of the wave device increases the number of the series back to the if 12 and the parallel coupled resonator 13 in the vertical direction, because again = 13 1377732 will increase the circuit area due to the increase of the pass band .

另,請參閱第5圖,其係為本發明之另一實施 其中該上並聯_合譜振器電容層18Ga係具有-第一上並聯轉合譜振器電容佈線職及-第二上並 %,口咕振盗電容佈線18〇f,t亥下並聯麵合譜振器 電容層180b係具有—第—下並㈣合It振H電容 佈線18Gg及—第:τ並聯輕合諸振器電容佈線 職,並以該第十二導電柱m2連接該第一上並聯 耦合諧振器電容佈線18〇e與該並聯耦合諧振器電感 佈線⑼之一端191谷,及以該第十三導電柱B13連 接該第二上並聯耦合諧振器電容佈線180f與該並聯 耦合諧振器電感佈線191之另一端191b,該第一上 並聯麵合諸振器電容佈線18Ge與該第—下並聯耗合In addition, please refer to FIG. 5, which is another implementation of the present invention, wherein the upper parallel-combined spectrum resonator capacitor layer 18Ga has a first upper parallel conversion spectral resonator capacitor wiring position and a second upper %, 咕 咕 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容Capacitor wiring, and connecting the first upper parallel coupled resonator capacitor wiring 18〇e and one end 191 valley of the parallel coupled resonator inductor wiring (9) with the twelfth conductive pillar m2, and the thirteenth conductive pillar B13 Connecting the second upper parallel coupled resonator capacitor wiring 180f and the other end 191b of the parallel coupled resonator inductor wiring 191, and the first upper parallel surface combined with the resonator capacitor wiring 18Ge is in parallel with the first-down parallel connection

„電容佈線180“系形成一第一並聯耦合諧振 器電今A6,δ亥第二上並聯耦合諧振器電容佈線18〇f j該第二下並聯耦合諧振器電容佈線180h係形成 —第二並聯耦合諧振器電容A6,,,且該第一並聯耦 合譜振器電容A6,、該第二並聯輕合諧振器電容A6” 與該並聯耦合諧振器電感佈線191係形成一第一並 聯耦合諧振器與一第二並聯耦合諧振器。 夕接著,請參閱第.6圖,其係為該具有傳輸零點 之多頻帶通濾波器電路照片與所得散射參數結果, 其係利用低溫共燒陶瓷製程製作,電路尺寸為 2^mmxl.25mmx〇.9mm,電路設計之散射參數模擬 14 1377732 結果與利用向量網路分析儀之量測結果彼此相當符 合。由量測結果顯示第一通帶之中心頻率约為 2.45GHz,且通帶範圍之折返損耗大於12dB,通帶 範圍之植入損耗小於· 1.6dB ;第二通帶之中心頻率約 為5.25GHz,且通帶範圍之折返損耗大於i7dB,通 π範圍之植入損耗小於2dB;四個傳輸零點分別位 於1/6、3.04、3.3以及6.3GHz;禁帶衰減量在頻 率範圍於0.1〜1.5GHz内皆可大於i5dB、於 3.2〜3.9GHz内皆可大於23犯以及於6〜8(}Ηζ内皆可 大於20dB。 本發明之保護範圍當視後附之申請專利範圍所 界定者為準’任何熟’知此項技藝者’在不脫離本發 明之精神和範圍内所作之任何變化與修改,均屬於 本發明之保護範圍。 、 【圖式簡單說明】 第1圖:依據本發明之—具體實施㈣,一種具有傳 輸零點之多頻帶通濾波器之等效電路圖。 第2圖:依據本發明之另—具體實施例,另一種具 有傳輪零點之多頻帶通濾波器之等效電路 圖。 第3圖.依據本發明之—具體實施例,-種具有傳 輸零點之㈣帶㈣波ϋ之基板結構之立 體圖。 第4圖:依據本發明 钱具體實施例,該具有傳輸 零點之多頻帶通濾 上視圖。 波器之基板結構各層 之„Capacitor wiring 180” forms a first parallel coupled resonator, A6, δH, second upper parallel coupled resonator capacitor wiring 18〇fj, the second lower parallel coupled resonator capacitor wiring 180h is formed—second parallel coupling The resonator capacitor A6, and the first parallel coupled resonator capacitor A6, the second parallel coupled resonator capacitor A6" and the parallel coupled resonator inductor wiring 191 form a first parallel coupled resonator and A second parallel coupled resonator. Next, please refer to Fig. 6, which is a photograph of the multi-band pass filter circuit with the transmission zero point and the obtained scattering parameter result, which is fabricated by a low temperature co-fired ceramic process, the circuit The size is 2^mmxl.25mmx〇.9mm, the scattering parameter simulation of the circuit design 14 1377732 The results are in good agreement with the measurement results using the vector network analyzer. The measurement results show that the center frequency of the first passband is about 2.45. GHz, and the foldback loss of the passband range is greater than 12dB, the implant loss of the passband range is less than 1.6dB; the center frequency of the second passband is about 5.25GHz, and the foldback loss of the passband range is large At i7dB, the implant loss in the π range is less than 2dB; the four transmission zeros are located at 1/6, 3.04, 3.3, and 6.3GHz; the forbidden band attenuation can be greater than i5dB in the frequency range of 0.1~1.5GHz. It can be greater than 23 guilts in ~3.9 GHz and greater than 20 dB in 6~8 (} 。. The scope of protection of the present invention is subject to the definition of the patent application scope. Any changes and modifications made without departing from the spirit and scope of the present invention are within the scope of the present invention. [A Brief Description of the Drawings] FIG. 1 : According to the present invention - a specific implementation (4), a transmission zero An equivalent circuit diagram of a multi-band pass filter. Fig. 2 is an equivalent circuit diagram of another multi-band pass filter having a transmission zero according to another embodiment of the present invention. Fig. 3 is a view of the present invention. - A specific embodiment, a perspective view of a substrate structure having a (four) band (four) wave 传输 of transmitting zeros. Fig. 4 is a top view of a multi-band filter having a transmission zero point according to a specific embodiment of the present invention. structure Layers

依據本發明 有傳輸零點 之立體圖。 之另一具體實施例,另一種具 之多頻帶通濾波器之基板結構 第6圖:依據本發明之一 ^ . 具體實施例,該具有傳轉According to the invention there is a perspective view of the transmission zero. Another specific embodiment, another substrate structure having a multi-band pass filter. Fig. 6: According to one embodiment of the present invention, the embodiment has a transfer

“ 夕頻帶通濾波器電路照片與所得葡 射參數結果。 Μ 【主要元件符號說明】 10 11 lib 13 具有傳輸零點 帶通濾波單元 弟一譜振器 並聯耦合諧振 之多頻帶通濾波器 11 a 第一諧振器 12 串聯回授諧振器 器 j具有傳輸零點之多頻帶通波器之基板結 ⑽下接地層 UOb上接地層"Photo of the sigma band pass filter circuit and the resulting sigma parameter result. Μ [Description of main component symbols] 10 11 lib 13 Multi-band pass filter with parallel zero-band bandpass filtering unit-spectrum oscillator parallel coupling resonance 11 a A resonator 12 is connected in series to the resonator device j. The substrate junction (10) of the multi-band wave-transmission device having the zero point is transmitted to the ground layer on the ground layer UOb.

U0c下接地佈、線 蘭上接地佈線 120串聯回授諧振器電容層 120a串聯回授諧振器電容佈線 130串聯回授諧振器電感層 I30a串聯回授諧振器電感佈線 l3〇b搞合電感佈線 130c第一端 13〇d —端 i3〇e 另一端 UOf第二端 130g第三端 140諧振益電感層:141第一諧振器電感佈線 16 1377732 141a —端 141b 另一端 142第二諧振器電感佈線 142a —端 142b 另一端 150諧振器電容積層150a上諧振器電容層 150b下諧振器電容層U0c lower grounding cloth, line blue grounding wiring 120 series feedback resonator capacitance layer 120a series feedback resonator capacitance wiring 130 series feedback resonator inductance layer I30a series feedback resonator inductance wiring l3〇b engage inductance wiring 130c First end 13〇d - end i3〇e other end UOf second end 130g third end 140 resonant benefit inductor layer: 141 first resonator inductor wiring 16 1377732 141a - end 141b the other end 142 second resonator inductor wiring 142a - End 142b The other end 150 resonator dielectric volume layer 150a on the resonator capacitor layer 150b lower resonator capacitance layer

150c第一上諧振器電容佈線 150d第二上諧振器電容佈線 150e第一下諧振器電容佈線 150f第二下諧振器電容佈線 160電極層 161輸入電極 170 匹配電容層 162 輸出電極 171輸入匹配電容佈線172 ^ ψ 1 δη ^ * a %出匹配電谷佈, 180並聯耦合諧振器電容積層 180a上並聯耦合諧振器電容層 180b下並聯耦合諧振器電容層150c first upper resonator capacitance wiring 150d second upper resonator capacitance wiring 150e first lower resonator capacitance wiring 150f second lower resonator capacitance wiring 160 electrode layer 161 input electrode 170 matching capacitance layer 162 output electrode 171 input matching capacitor wiring 172 ^ ψ 1 δη ^ * a % out of the matching grid, 180 parallel coupled resonator electric volume layer 180a parallel coupled resonator capacitor layer 180b parallel coupled resonator capacitor layer

180c上並聯耦合諧振器電容佈線 180d下並聯耦合諧振器電容佈綠 180e第一上並聯耦合諧振器電容佈線 180f第二上並聯耦合諧振器電容佈線 180g第一下並聯耦合諧振器電容佈線 180h第二下並聯耦合諧振器電容佈線 190 並聯耦合譜振器電感層 191並聯耦合諧振器電感佈線 191b 191a —端 [S3 1377732180c parallel coupling resonator capacitor wiring 180d parallel coupling resonator capacitor green 180e first upper parallel coupling resonator capacitor wiring 180f second upper parallel coupling resonator capacitor wiring 180g first lower parallel coupling resonator capacitor wiring 180h second Lower parallel coupled resonator capacitor wiring 190 Parallel coupled spectrum oscillator inductor layer 191 Parallel coupled resonator inductor wiring 191b 191a - terminal [S3 1377732

A1 串聯回授譜振電容 A2 第一 It振器電容 A3 第二諧振器電容 A4 輸入匹配電容 A5 輸出匹配電容 A6 並聯耦合諧振器電容 A6, 第一並聯耦合諧振器電容 A6” 第二並聯耦合諧振器電容 B1 第一導電柱 B2 第二導電柱 B3 第三導電柱 B4 第四導電柱 B5 第五導電柱 B6 第六導電柱 B7 第七導電柱 B8 第八導電柱 B9 第九導電柱 B10 第十導電柱 Bll 第十一導電柱. B12 第十二導電柱 B13 第十三導電柱 Cl 輸入匹配電容 C2 輸出匹配電容 C3 第一諧振器電容 C4 第二諧振器電容 C5 串聯回授諸振器電容 C6 並聯耦合諧振器電容 LI 耦合電感 L2 第一諧振器電感 L3 第二諧振器電感 L4 串聯回授諧振器電感 L5 並聯耦合諧振器電感 M 共用金屬層 - Ml 第一共用金屬佈線 M2 第二共用金屬佈線 PI 輸入端 P2 輸出端 18A1 series feedback spectral capacitor A2 first it oscillator capacitor A3 second resonator capacitor A4 input matching capacitor A5 output matching capacitor A6 parallel coupled resonator capacitor A6, first parallel coupled resonator capacitor A6" second parallel coupled resonance Capacitor B1 first conductive column B2 second conductive column B3 third conductive column B4 fourth conductive column B5 fifth conductive column B6 sixth conductive column B7 seventh conductive column B8 eighth conductive column B9 ninth conductive column B10 tenth Conductive column B11 eleventh conductive column. B12 twelfth conductive column B13 thirteenth conductive column Cl input matching capacitor C2 output matching capacitor C3 first resonator capacitance C4 second resonator capacitance C5 series feedback resonator capacitance C6 Parallel coupled resonator capacitor LI coupled inductor L2 first resonator inductor L3 second resonator inductor L4 series feedback resonator inductor L5 shunt coupled resonator inductor M common metal layer - Ml first common metal wiring M2 second common metal wiring PI input P2 output 18

Claims (1)

1377732 七 、申請專利範圍: 種具有傳輸零點之多頻帶通濾波器, 一輸入端; 〃係包含 一輸出端; =通其係包含有一電性連接該輸入端 白振益及—與該第一諧振器並聯之第二批 :器,該第-諧振器係具有一第一譜振器電感:: :該第-諧振器電感並聯之第—諧振器電容, 一諧振器係具有一第二譜振器電感及一遍' 譜振器電感並聯之第二㈣器電容,且Μ 器係電性連接該輪出端; 〃弟…皆振 :少-串聯回授諧振器’係與該 聯,該串聯回授譜振器係具有-串聯回4= 諧振器電感;以及. 卫聯之串聯回授 至少一並聯耦合諧振器,係盥 聯,該並聯耦合諧振哭係且…:、濾波單元並 並聯輕合諧振Γ電感r及—電性連接該輪出端之 範圍第1項所述之具有傳輸零點之多頻 匹配電容、叶出單元另包含有-輸入 匹配電容兩端係分 。電感,該輸入 描51,訪认· f連接垓輸入端及該第 輪出匹配電容兩端係分別電性連接該輪; J9 f及該第二諧振器,該耦合電感一端係電性連接該 第一諧振器及該輸入匹配電容,而另一端係電性連 接該第二諧振器及該輸出匹配電容。 3、 如申請專利範圍第2項所述之具有傳輸零點之多頻 2通濾波器,其中該並聯耦合諧振器之該並聯耦合 2振器電容係電性連接該輸入匹配電容,該並聯耦 合譜振器電感係電性連接該輸出匹配電容。外 4、 =申請專利範圍第丨項所述之具有傳輸零點之多頻 帶通滤波器,其中該串聯回授諧振器之一端係接地。 5、 如申請專利範圍第Μ所述之具有傳輸零點之多頻 帶通濾波器,其中該並聯耦合諧振器之該並聯耦合 諧振器電容係與該並聯耦合諧振器電感串聯。° 6、 一種具有傳輸零點之多頻帶通濾波器之基板結構, 其係包含: ° 一下接地層; 一形成於該下接地層上之串聯回授諧振器電容層; 一形成於該串聯回授諧振器電容層上之 9 諧振器電感層;: 杈 一形成於該串聯回授諧振器電感層上之諧振器電 感層; 一形成於該諧振器電感層上之諧振器電容積層其 係包含一上譜振器電容層及一下諧振器電容層; 一形成於該諧振器電容積層上之共用金屬層且該 下諧振器電容層係電性連接該共用金屬層;^ 1377732 一形成於該共用金屬層上之電極層,其係具有一輸 入電極及一輸出電極; 一形成於該電極層上之匹配電容層,其係電性連接 該共用金屬層; 一形成於該匹配電容層上之並聯耦合諧振器電容 積層,其係具有一上並聯耦合諧振器電容層及一下 並聯耦合諧振器電容層; 一形成於該並聯耦合諧振器電容積層上之並聯耦 合諧振器電感層;以及 一形成於該並聯耦合諧振器電感層上之上接地層。 7、 如申請專利範圍第6項所述之具有傳輸零點之多曰頻 帶通遽波器之基板結構,其巾該下接地層係具有一 下接地佈線,該串翻授譜振器電容層係且有一串 聯回授諧振器電容佈線’該下接地佈線與該串聯回 授諧振器電容佈線係形成—串聯回授諧振器電容。 8、 如申請專利範圍第7項所述之具有傳輸零點之多頻 帶通遽波器之基板結構,其巾該串聯回㈣振器電 感層係具有-串聯回授諧振器電感佈線,該串聯回 授譜振器電容係與該串聯回授譜振器電感佈線形成 一串聯回授諧振器。 9、 如申請專利範圍第6項所述之具㈣輸零點之多頻 帶通遽波器之基板結構,其巾該切㈣電容層係 具有一第一上諧振器電容佈線及一第二上 容佈線,該下譜振器電容層係具有-第-下諧振器 21 1377732 電容佈線及一第二下諧振器電容佈線,該共用金屬 層係具有-第-共用金屬佈線及—第二共用金屬佈 線,該第一上諧振器電容佈線、該第一下諧振器電 容佈線及該第一共用金屬佈線係形成一第一諧振器 電容,該第二上諧振器電容佈線、該第二下=振^ 電谷佈線及該第二共用金屬佈線係形成一第二諧^1377732 VII. Patent application scope: a multi-band pass filter with transmission zero point, an input terminal; the tether system includes an output terminal; = the system includes an electrical connection with the input terminal white vibration and - and the first resonator a second batch of parallels: the first resonator has a first spectral oscillator inductance:: the first-resonator inductor is connected in parallel with the first-resonator capacitor, and one resonator has a second spectral oscillator The inductor and the second (four) capacitor of the 'spectral inductor in parallel, and the cymbal is electrically connected to the wheel end; 〃 ... 皆 皆 皆 皆 皆 : : : : : : : : : 少 少 少 少 少 少 少 少 少 少 少 少 少 少 少 少 少 少 少The spectral oscillator system has - series return 4 = resonator inductance; and. Guardian series feedback at least one parallel coupled resonator, the system is coupled, the parallel coupled resonant crying and ...:, filtering unit and parallel coupling The resonant Γ inductor r and the range of the ferroelectric connection are electrically connected to the wheel end. The multi-frequency matching capacitor having the transmission zero point described in the first item, the leaf output unit further includes a - input matching capacitor at both ends. Inductance, the input port 51, the access port of the f-connection port and the two ends of the first-stage matching capacitor are respectively electrically connected to the wheel; J9 f and the second resonator, the coupling inductor is electrically connected at one end The first resonator and the input match the capacitor, and the other end is electrically connected to the second resonator and the output matching capacitor. 3. The multi-frequency 2-pass filter with transmission zero according to claim 2, wherein the parallel coupled resonator of the parallel coupled resonator is electrically connected to the input matching capacitor, and the parallel coupling spectrum The vibrator inductance is electrically connected to the output matching capacitor. 4, = multi-band bandpass filter with transmission zero as described in the scope of the patent application, wherein one end of the series feedback resonator is grounded. 5. A multi-band bandpass filter having a transmission zero as described in the scope of the patent application, wherein the parallel coupled resonator capacitance of the parallel coupled resonator is in series with the parallel coupled resonator inductance. 6. A substrate structure having a multi-band pass filter for transmitting a zero point, comprising: a lower ground layer; a series feedback resonator capacitor layer formed on the lower ground layer; and a serial feedback a resonator inductor layer on the resonator capacitor layer; a resonator inductor layer formed on the inductor layer of the series feedback resonator; a resonator electrical volume layer formed on the inductor layer of the resonator An upper spectrum resonator capacitor layer and a lower resonator capacitor layer; a common metal layer formed on the resonator electrical volume layer and the lower resonator capacitor layer electrically connected to the common metal layer; ^ 1377732 is formed on the common metal An electrode layer on the layer having an input electrode and an output electrode; a matching capacitor layer formed on the electrode layer electrically connected to the common metal layer; and a parallel coupling formed on the matching capacitor layer a resonator electrical volume layer having an upper parallel coupled resonator capacitor layer and a lower parallel coupled resonator capacitor layer; one formed in the parallel coupled resonator A parallel coupling on the bulk layer couples the resonator inductive layer; and a ground plane formed on the inductive layer of the parallel coupled resonator. 7. The substrate structure of the multi-turn band pass chopper having the transmission zero point as described in claim 6 of the patent application, wherein the lower ground layer has a grounding wiring, and the string is retracing the capacitive layer There is a series feedback resonator capacitor wiring 'the lower ground wiring is formed with the series feedback resonator capacitor wiring system - the resonator capacitor is serially fed back. 8. The substrate structure of the multi-band pass chopper having a transmission zero point according to claim 7 of the patent application, wherein the series (four) vibrator inductor layer has a series-connected resonator inductor wiring, and the series is back. The spectral resonator capacitance is combined with the series feedback resonant inductor wiring to form a series feedback resonator. 9. The substrate structure of the multi-band pass chopper of (4) zero-point transmission according to claim 6 of the patent application, wherein the (four) capacitor layer has a first upper resonator capacitor wiring and a second upper capacitor. Wiring, the lower spectral resonator capacitor layer has a -first-lower resonator 21 1377732 capacitor wiring and a second lower resonator capacitor wiring, the common metal layer having - a first common metal wiring and a second common metal wiring The first upper resonator capacitor wiring, the first lower resonator capacitor wiring and the first common metal wiring form a first resonator capacitance, the second upper resonator capacitance wiring, the second lower=vibration The electric valley wiring and the second common metal wiring form a second harmonic 1〇、=申請專利範圍第9項所述之具有傳輸零點之多頻 f通濾波器之基板結構,其中該諧振器電感層係具 有一第一諧振器電感佈線及一第二諧振器^感佈 線,該第一諧振器電感佈線與該第一諧振器電容係 幵〆成第振器,该第一譜振器電感佈線與該第 二諧振器電容係形成一第二諧振器。The substrate structure of the multi-frequency f-pass filter having the transmission zero point described in claim 9, wherein the resonator inductance layer has a first resonator inductance wiring and a second resonator In the wiring, the first resonator inductor wiring and the first resonator capacitor are coupled into a vibrator, and the first oscillator inductor wiring and the second resonator capacitor form a second resonator. 1卜=申請專利範圍帛6項所述之具有傳輸零點之多頻 ▼通濾波之基板結構,其中該串聯回授諧振器電 感層係另具有一輕合電感佈,線,該#合電感佈線係 電性連接至該諧振器電感層與該下諧振器電容層。 12、=申請專利範圍第6項所述之具有傳輸零點之多頻 ▼通濾波器之基板結構,其中該上並聯耦合諧振器 電谷層係具有至少一上並聯耦合諧振器電容佈線, 該下並聯耦合諧振器電容層係具有至少一下並聯耦 口諧振器電容佈線,該上並聯耦合諧振器電容佈線 與該下並聯耦合諧振器電容佈線係形成一並聯耦合 諧振器電容。 σ 22 1377732 13、 如申請專利範圍第12項所述之具有傳輸零點之多 頻帶通濾波器之基板結構,其中該並聯耦合諧振器 電感層係具有一並聯耦合諧振器電感佈線,該並聯 耦合諧振器電感佈線係與該並聯耦合諧振器電容形 成一並聯耦合諧振器,該並聯耦合諧振器係連接該 輸入電極與該輸出電極。 14、 如申請專利範圍第6項所述之具有傳輸零點之多頻 帶通濾波器之基板結構,其中該共用金屬層係具有 一第一共用金屬佈線及一第二共用金屬佈線,該匹 配電谷層係具有一輸入匹配電容佈線及一輸出匹配 電谷佈線,該輸入匹配電容佈線、該輸入電極與該 第共用金屬佈線係形成一輸入匹配電容,該輸出 匹配電谷佈線、該輸出電極與該第二共用金屬佈線 係形成一輸出匹配電容。 231b=Application of the patent scope 帛6 item has a multi-frequency ▼-pass filter substrate structure for transmitting zero point, wherein the series feedback resonator inductance layer further has a light-combined inductor cloth, a line, and the #inductance wiring Electrically connected to the resonator inductor layer and the lower resonator capacitor layer. 12. The substrate structure of the multi-frequency ▼-pass filter having a transmission zero point as claimed in claim 6, wherein the upper parallel-coupled resonator electric valley layer has at least one upper parallel coupled resonator capacitor wiring, the lower The parallel coupled resonator capacitor layer has at least a lower parallel coupled resonator capacitor wiring, and the upper parallel coupled resonator capacitor wiring forms a parallel coupled resonator capacitor with the lower parallel coupled resonator capacitor wiring. The substrate structure of the multi-band pass filter with transmission zero point according to claim 12, wherein the parallel coupled resonator inductor layer has a parallel coupled resonator inductor wiring, the parallel coupled resonance The inductor wiring and the parallel coupled resonator capacitor form a parallel coupled resonator that connects the input electrode to the output electrode. 14. The substrate structure of the multi-band pass filter having a transmission zero point according to claim 6, wherein the common metal layer has a first common metal wiring and a second common metal wiring, and the matching electric valley The layer has an input matching capacitor wiring and an output matching grid wiring, the input matching capacitor wiring, the input electrode and the first common metal wiring form an input matching capacitor, the output matching the grid wiring, the output electrode and the The second common metal wiring forms an output matching capacitor. twenty three
TW98102901A 2009-01-23 2009-01-23 Multiband bandpass filter with transmission-zeros and substrate structure thereof TWI377732B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW98102901A TWI377732B (en) 2009-01-23 2009-01-23 Multiband bandpass filter with transmission-zeros and substrate structure thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW98102901A TWI377732B (en) 2009-01-23 2009-01-23 Multiband bandpass filter with transmission-zeros and substrate structure thereof

Publications (2)

Publication Number Publication Date
TW201029255A TW201029255A (en) 2010-08-01
TWI377732B true TWI377732B (en) 2012-11-21

Family

ID=44853966

Family Applications (1)

Application Number Title Priority Date Filing Date
TW98102901A TWI377732B (en) 2009-01-23 2009-01-23 Multiband bandpass filter with transmission-zeros and substrate structure thereof

Country Status (1)

Country Link
TW (1) TWI377732B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI639273B (en) 2012-05-11 2018-10-21 國立中山大學 Stacked inductance resonator and bandpass filter of using the same
CN108808185A (en) * 2018-07-27 2018-11-13 广东风华高新科技股份有限公司 A kind of LTCC bandpass filters suitable for L-band
KR20210013955A (en) * 2019-07-29 2021-02-08 삼성전기주식회사 Semi-conductor package

Also Published As

Publication number Publication date
TW201029255A (en) 2010-08-01

Similar Documents

Publication Publication Date Title
CN106330130B (en) Channel-splitting filter
TW200807799A (en) Resonator device with shorted stub and MIM-capacitor
TWI377732B (en) Multiband bandpass filter with transmission-zeros and substrate structure thereof
US8018297B2 (en) Balanced-unbalanced conversion circuit
TW200941816A (en) Second order band-pass filter and wireless apparatus using the same
Mezaal et al. A novel design of two loosely coupled bandpass filters based on Hilbert-zz resonator with higher harmonic suppression
JP4735087B2 (en) 90 degree hybrid circuit and Wilkinson power distribution circuit
JP2006211272A (en) Diplexer
TWI425534B (en) Transformer
Zemlyakov et al. The novel waveguide filters on complex multilayered metal-dielectric structures
Amiri et al. Design of compact RF filters with narrow band-pass and wide stop-band by open-stub & T-shaped microstrip resonators and defected ground structure (DGS)
JP2008061082A (en) Balancing filter circuit and high frequency device fabricated thereby
US3381207A (en) Compact frequency multiplier
JPH0478203A (en) Mixer
JP2017228862A (en) Electronic circuit
TW200908431A (en) Filtering circuit and structure thereof
JP6994988B2 (en) Filters and electronic devices
JP3853753B2 (en) High frequency suppression circuit
Goes et al. A design technique for distributed dual-band bandpass filters
JP2007288742A (en) Small wideband antenna device
Goldenberg et al. Synthe-sis and implementation of a polynomial notch filter according to an RF prototype
TWI586229B (en) Adjustable an in-line band rejection structure
TWI252604B (en) Multilayered band-pass filter
JP2018067863A (en) Band pass filter
JP5599334B2 (en) Crossing circuit