TWI377610B - Substrate processing method - Google Patents

Description

1377610 Description of the Invention: [Technical Field] [0001] The present invention relates to a substrate processing method in which a Zengshi soil, a step formed by a step and used as a mask, is dissolved in a new light. In the reflow process of the resist pattern, the step of flowing the photoresist is performed [previously] [0002] in, for example, an LCD (Liquid Crystal Display) ^TPT (^ 仃 仃 仃 仃 , , , 亦 亦 亦 亦 亦 亦 四 四f 彡 而 ' 进行 进行 进行 进行 进行 进行 进行 进行 进行 进行 进行 进行 进行 进行 进行 进行 进行 进行 进行 进行 进行 进行 进行 进行 进行 进行 进行 进行 进行 进行 进行 进行 进行 进行 进行 进行 进行 进行 进行 进行 进行 进行 进行 进行 进行 进行The resist pattern dissolves and deforms to form a new photoresist. According to the reflow process, when the photoresist pattern is formed for the second time, the processing of the main image device and the exposure device can reduce the device cost; Description _ use this reflow treatment of the TFT ^ step ^ W efficiency. When [0004] forming an amorphous SiTFT, as shown in Figure 6 (), on the glass substrate 200 on the gate electrode 2 〇 1 sequentially piled up, Forming an insulating layer 202;

The Si layer 203 is composed of an a-Si layer (undoped amorphous Si layer) + phosphorus amorphous Si layer 203b; and) 3a and n a-Si layers (metal doped layer 205 for forming a source) [Art] In addition, for the side metal layer 205, the photoresist is formed on the film by layer 2〇5, by the exposure and development, the step of the shirt is used in the metal. No. However, the photoresist pattern 206 has different film thicknesses (thickness, thickness, and thickness) exposure processing, and the exposure technique is disclosed in Patent Document 1. /, 'Searching for 。. 'And 'About the half 3 1377610® ^ F00, 6^ use the photoresist pattern 206 as the metal for the money; B grabs [=5 as the % layer; ί is not affected by the partial; _., the influence of the liquid _ resistance metamorphic _'2QmQ6 due to full processing, The process of removing the altered layer 207 is performed. For the treatment of the mouth, the instillation of the upper-input/L is treated as follows. For example, the alkaline solution is used as the thirst liquid, and the metamorphic layer is removed as shown in Fig. 6 (c). The film does not need to rely on the film resistance ^7 - processing 'to block the shadow to block the surrounding light resistance # (% of |) blocking to remove, leaving only [0009] then as shown in Figure 6 (4), retention By light 206 is exposed to a solvent atmosphere to perform a photo-reaction process (reflow treatment), as shown in FIG. 6 (where), and the photoresist layer is formed on the photo-resist layer. The cover is placed on the Si layer 2〇3, and the layer is moved as =(4). 'The heart layer in the channel area: before the shape processing, 7 is *timed_12. seconds_乂;2^^^ ί By this, the scent of the scented cake (4) is dissolved by the sufficiency of the organic solvent, and the organic solvent is penetrated into the photoresist as a whole. = Document 1] Japanese special opening 2〇〇5_1 Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. Into the f layer 2G7, in order to remove the variable f layer 2 () 7 into the reflow process, the solvent atmosphere to the light resistance. As described in the literature 2, there is a method, more to the photoresist to W light # hunting this The surface of the photoresist is reorganized into a solvophilic property. In the use of the method, the use of a wet side liquid such as a test solution causes an increase in cost, and the 'long time required to process this step' There is an unsuitable for mass production step of its icr&i®] 1 as in the above case, the object of the present invention is to provide a first-class solution of the photoresist pattern to form a desired photoresist pattern in the retroreflection process. In order to solve the above problems, according to the plate processing method of the present invention, the light-hardening case is dissolved, and a new light-receiving case is formed, and its characteristics are exposed. The bottom of the light side of the state of the county _ case 槪 scale between the internal storm blowing air on the substrate to remove the pure water; and the domain. The silk pattern is exposed to the dissolution of the job to dissolve it, and shade the established area The pure water is exposed to γοοηΓ ϋ The pattern is exposed to pure water for W seconds. Such hunting is carried out by exposing the photoresist at the reflow point where the photoresist is dissolved to pure water, and the pure water increases the surface of the photoresist by the mass layer. The read layer deteriorates to a density error, and the metamorphic layer is not removed. And the improvement of the photoresist absorption is as follows: in the reflow (dissolution) treatment, the organic solvent permeates the absorption rate of the photoresist &~j, and as a result, the dissolution can be stably performed, and the cost is not required to be reduced as in the past, and the production is increased. effectiveness. In addition to the step of refining the layer, [0015] and also exposing the photoresist pattern to the process of dissolving, and obscuring the predetermined area, and in the A j汛For the etching of the underlying film, 1377610, the mask is used to make the time of the light-off wire _ exposed to the pure water towel called 嶋 (four), and the substrate can be appropriately circulated by r/m ί The method has a photoresist and forms a new photoresist pattern, and the feature is exposed on the side mask of the ιΐίίί film, and the photoresist pattern is used to supply pure water on the substrate for a predetermined time to wash off the developer; The substrate is blown with air to remove the pure water; and the domain. Exposing the photoresist pattern to a solvent atmosphere to dissolve it, and shielding the solution in a predetermined area with a concentration of 2.3·ΤΜΑΗ (tetramethylammonium hydroxide) water/liquid mixture, or diluting the aqueous solution with a predetermined ratio of pure water. By. ^ In the county of Nao County, you should at least resist Wu [my ί by! ° This is done before the shredding process, to make the second rape, the developer makes the photoresist and the metamorphic layer swell, Guangcheng Shengguang The absorption rate of the organic solvent is blocked, and the organic solvent is allowed to penetrate the photoresist as a whole during the treatment. Therefore, the step of removing the metamorphic layer can be reduced as needed, and the effect photoresist pattern can be used to form a substrate processing method, which can improve the production efficiency in the reflow rate of the dissolution pattern and the resistance pattern of the first resistance pattern. Implementation method] I according to the implementation of the county _ in accordance with the invention u plate = two real r paste substrate processing method of the reflow pattern TFT ^ fco? /? Ev) ^! i throwing i set (check g) 52 was applied Device. Into the sister _ stream processing to re-form the photoresist pattern 2, the wide stream pattern forming apparatus 1 includes the substrate 11 box station (c/s), and the middle edge station 2 is provided with the substrate processing unit 3, The substrate processing unit 3 imaginary Μ-Μ, the substrate processing direction shown in the array is arranged in a plurality of substrates, and the substrate is processed in two rows. (4) Decrement between the number and the roller conveyor. The horizontal axis conveyor lane of the Lin Rei slave is arranged in the substrate processing line indicated by the arrow [F2] 卩 arrow A in each unit, and the first hydrophobic treatment unit (10) 5 in the processing direction. For example, HMDS (hexa Aim :=? = heat treatment, whereby the substrate 0 is hydrophobized and the second, the heated wire G cooling line is set to a temperature. The line is used to place the photoresist before the unit (10)) 7 deal with). In addition, the details of the prior processing are handled by this pre-processing, so the details are described.仃之(10)8 J Dissolved light T is connected to the pre-processing unit (Μ) 7 is configured with a reflow unit 1377610. In this reflow unit (RF) 8, the substrate remaining in the cavity (4) is exposed to expose the photoresist to the solvent atmosphere. [=4] In the 'Fig. 1', there are examples of the arrangement of the substrate processing lines across the two columns. The right side = soap element (10) 8 (two in each line), the two rows of substrate processing lines = the substrate delivery unit 4, the substrate G The reflow unit (Rp) 8 is sent in and out. ^The conveying portion 4 includes an arm (four) holding & holding the substrate G, and is set to be compliant; == two') by 8, the substrate G is appropriately fed by the arm device 4a to have 8, which can be im and in 2 columns Between the management lines, adjacent to the reflow unit (10), the buffer unit (return) 9 is disposed at the position of the mu portion 4, and the upper plate and the heat treatment device (10) COL) 10 can be processed in the substrate indicated by the arrow B. A plurality of heating plates and cold plates are formed; a buffer unit (Buf) 11 is used to temporarily hold the substrate G. The change of life is used for the production of the photoresist and its surface part; ^) 7 is the treatment of the young (before the reflow treatment) ====); structure: ?r·. 15 Freely used to control the rotation of the roller. The dice wheeling mechanism is constructed to move the conveying path 15 by the flat. The transport drive mechanism 19 drives the water in the pure water f-chamber unit 16 to cool the treated surface of the substrate G. The method can be immersed (dressed) in a manner that is exposed to Flowing water + square ί, set the way. _ 2G immersion by slit 対σ 13 1377610 [0028] In Fig. 2, the nozzle 2G is connected to the pure water supply mechanism 2, and the ton of water supply mechanism 21 starts and stops the supply of pure water W. Further, the nozzle 2A has a slit-like nozzle opening extending in the width direction of, for example, the substrate G, and is provided in the vicinity of the inlet 16a of the chamber unit 'π. ' At the bottom of the chamber single unit 16, there is a fine discharge, which is discharged by the pure water W. [0029] The substrate G transported by the horizontal moving transport path 15 in the horizontal direction is fed into the chamber unit 16 from the feed inlet 16a at a predetermined speed (and the substrate G is sent by the sensor without a map). After entering), the pure water supply mechanism 21 is the same

The step starts to drive and the pure water w which flows out from the nozzle 20 at a predetermined temperature (for example, 24. 〇 to 24.5 ° C). Further, when the substrate G is not present under the nozzle 2 by the sensor (not shown), the pure water supply mechanism 21 stops driving and stops the flow of the water W from the nozzle 2 . [0030] After the pure water W is mounted on the substrate, the roller transport mechanism of the horizontal moving wheel 15 is stopped in the chamber unit 16, thereby exposing the photoresist to the pure water W for a predetermined time ( For example 30sec). [00!!] The chamber unit 17 is a unit for removing the pure water W contained in the substrate G, and is provided with a blowing nozzle 22 for holding the substrate G which is fed from the inlet 丨%. The treated surface of the water w blows the air.

The blowing nozzle 22 is disposed at a predetermined distance (for example, 150 mm) from the nozzle opening with respect to the surface to be processed. The air ejected from the nozzle opening is controlled by the blowing mechanism 23 to eject a predetermined pressure (e.g., MPa 2 MPa) of air to the surface to be processed of the substrate G (for example, 20 sec). A drain port 17c is provided at the bottom of the chamber unit 17 for discharging the pure water w removed from the substrate G by blowing air by the blowing nozzle 22. With this configuration, the air ejected from the blowing nozzle 22 can be placed on the substrate G that moves in the chamber unit 17 by moving the conveying path 15 horizontally, and is placed on the upper surface (treated surface). The pure water W is blown away, and when the substrate g is sent out from the delivery port 17b of the chamber unit 17, all the excess pure water w is removed. 9 1377610 30 The control unit consisting of the computer or the computer that executes the program = control _19, Shuqing fine, the blower side is f', according to the flow chart of Fig. 3 and the substrate state diagram of Fig. 4 In the substrate processing method of the present invention, the singularity of the device 1 is formed by the shoji of the shovel of the shovel of the shovel. Disposal of the unit 5 station, a piece of substrate G along the horizontal movement of the conveyor to the hydrophobic device 50 and exposure of 51 semi-exposure: membrane. "Yusaki into a private film, so that * need to become thin [_5] # By the hydrophobized light unit (10), the HMDS (hexamethyl-nitrogen-burning) atmosphere is ==2〇Se〇, the predetermined temperature (for example, 11(). The crucible is subjected to heat treatment for the second treatment, and the substrate is reduced. The bonding between G and the photoresist (step of Fig. 3) is obtained by the hydrophobization treatment, and the back-stage reflow treatment is appropriately suppressed (the photoresist 曰 is used to make the line width K & t. ^T, the substrate G in the high temperature state is hydrophobized. 5 towel is transported to the cooling unit it (Col) 6 and cooled to a predetermined temperature (step of Figure 3 [0036] light mosquito temperature The substrate G is then transported along the feed path 15 to the chamber unit 16 of the pretreatment unit (PreT) 7. Further, the pure water supply mechanism 21 causes the pure water W to flow out from the nozzle 20 so that the upper surface of the substrate G is horizontally The treated surface) is filled with pure water w (the step of Fig. 3 is illusion $. Once the substrate G as a whole contains pure water w, the conveying drive mechanism 19 is the roller in the 7jc flat moving conveyor 15 in the temporary chamber single unit 16 Driven, as shown in the figure, the photoresist 206 is exposed to pure water W for a predetermined time (for example, 7 of 10). Thereafter, the substrate G is transported along the horizontally moving transport path 15 to the chamber unit 17 Θ. The driving blowing lining 23 is self-blowing the nozzle 22 at a predetermined time (for example, 〇·2ΜΡ〇 ejects air between the surfaces of the substrate G that moves in the horizontal direction (for example, 2〇Se〇' thereby removing the pure water w of the ship (Fig. 3) Step S4) 〇 So, on the substrate G processed in the pre-processing unit (PreT) 7, as shown in FIG. 4 (4), the pure water W swells the photoresist 2〇6 and the metamorphic layer 2〇7 to increase the photoresist 206 ( The surface area of the altered layer 207) is deformed to a state in which the density is coarse. [0038] The conveying path 15 is moved horizontally. In the pre-processing unit (PreT) - the resistive restructured substrate G is transported to a returning element (RF) 8 adjacent to the pre-processing unit (pFeT) 7 or a buffer unit (Buf) 9. Ship f Ϊίΐ G to the buffer unit (Buf At 9 o'clock, the appropriate-age substrate transport unit 4 transports the substrate G toward the free reflow unit (RF) 8. [0039] _flow unit (RF) 8, adjusting the substrate G temperature to a predetermined % 2 ' will be adjusted The solvent atmosphere to a predetermined concentration, for example, the dilute-milk-introducing chamber is replaced with an atmosphere. The photoresist 206 and the metamorphic layer 207 are exposed to the diluent gas during the period of the treatment. Here, the photoresist 206 and the altered layer 2〇7 have an increased surface area, and the table has been reorganized into a state of high density, so that the absorption rate of the diluent of the organic solvent can be increased to quickly make the lion age pass through to the light. Block the whole. To this end, the scale (flow) progresses to form a photoresist pattern that shields the target Tg (step S5 of Fig. 3). Further, the processing in the J〇〇401 reflow unit (10)) 8 is completed, that is, the axe is transported to the buffer unit (Buf) 9 by the soil transport unit 4, and then the moving conveyor is moved. The substrate G is transported to the heat treatment set (10) / (8) 1 〇, and the photoresist pattern is fixed (step S6 of Fig. 3). Further, at 4, the substrate G of the substrate G is bonded to the substrate g by the substrate transfer unit 4, and then the substrate G is transported to the etching device 52. Now /, & [GG41] silk according to this method of the implementation of the daily basis of the reduction of the law 'in> the reflow process of the valley solution to advance the resistance of the light in the pure water ^ < The photoresist of the layer makes the organic solvent easy to penetrate. That is, = the age of the joyful rate 'and (four) stream processing, it may be necessary to go to the light layer of the step of the hot, allow 4- [2〇42] In addition, in the above embodiment, in the pre-processing unit (PreT) 7 Ordering materials, although the enamel is exposed to pure water w towel-like reconstituted photoresist, == pure =: in order to expose the photoresist to a given concentration

In the 'developing solution for reconstituting the photoresist is preferably, for example, a concentration of 2.38% of butyl _ _ tetrahydrogen hydride strips) aqueous solution, or in response to the damage of the silk surface, the slag is 1~1_0 times the pure water —^_#_tmah Aqueous solution. ^乍, at this time, the configuration example of the preprocessing unit (PreT) 7 is as shown in FIG. 5, and a liquid-liquid nozzle 24 is provided in the chamber single 7L 16 , and the developer liquid nozzle % includes a slit-shaped nozzle opening. The developing solution nozzle 25 supplies the developing solution nozzle 25 with a developing solution d having a predetermined concentration (for example, 2.38%). [0043] As shown in the figure, a pure water nozzle 26 is provided in the chamber unit 17, and the pure water nozzle 26 is supplied with pure water by the pure water supply mechanism 27. Further, the pure water w from the pure water nozzle 26 is cleaned and the rinsing agent of the shadow liquid D contained on the substrate G is removed. ‘

Further, although the pure water W' supplied to the substrate G is removed by the air blown from the air blowing nozzle 22, but also in the chamber unit 17, a plurality of pure water nozzles 26 and air blowing nozzles 22 are provided along the conveying path. The combination is configured to repeat the rinsing process. [0044] In the above embodiment, the shape of the hydrophobization treatment by the hydrophobization treatment unit (AD) 5 before the treatment in the pretreatment unit (PreT) 7 is shown, but the hydrophobization treatment may be performed. It is carried out after the treatment in the pretreatment unit (preT) 7 (before the reflow treatment). In the substrate processing method of the present invention, the hydrophobization treatment before the reflow treatment does not necessarily have to be carried out in the substrate treatment method of the present invention. 0, 12 1377610 [Examples] [0045] According to the embodiment, the method for processing the substrate according to the present invention is further described in accordance with the embodiment. [0046] Example 1 is a condition for pretreatment, and the state is exposure base '.sec ^ 20sec . sosec ^ (dressing) mode, dip ^ The method of setting the method to set the immersion in the flowing water. When the method of immersing the pure water and exposing the photoresist to the immersion (containment) mode, the pure water of the f ee is mixed with the photoresist when the photoresist is immersed in the pure water towel. Inside the sink. It is water-purified pure 2 squares = plate f is 20 to 30 in water depth. The distance of light blocking is 5 〇〇 _. When the formula is sighed, the water is blown from the water outlet to the air. The pure water on the substrate is 150mm, and the blowing time is about 2〇sec. The distance from the nozzle to the light block is about [〇〇48]. The results of the gentleman's fruit recognition of the main flow 'reflow process results flow (dissolved 1 ° and 'as recorded in Table 1 when it does not flow is X. /螂) is completely 〇, when not complete △, 丄377610

1 Table 1

[0〇49] The water treatment method and the pure water treatment line under the combination of the conditions of the table and the time. The flow processing in the step can be completely

[_] After tMA) When the photoresist on the substrate is processed and the photoresist is wiped, the reflow process is confirmed for a predetermined time. Treatment and removal of pure water treatment Pure water, shaft W Γ005Π

The method of blowing water-like pure water, so that the light 'exposed _ ί ' is placed on the sleek side, and the pure water of lcx is mounted on the photoresist. When the method of impregnating in pure water is used, the substrate is Immersion in water depth 2. ~30 ugly = distance::= When the form of pure water is set, 'set from the water-air outlet to the ash, and the air is blown by the air, and the dry air is the air that blows toward the pure water on the substrate. Air >1 force source (4) G_2MPa, the distance from the nozzle to the light block is about 150mm, the blowing time is about 20sec. And the substrate is heated to 110. (: 120 seconds, and the substrate is exposed to hmds (six 曱In the atmosphere of the bismuth alkane, the hydrophobization treatment is carried out. 14 As described in Table 2, when it is incomplete, it is Δ, and when it is not flowing at all, when the fruit & , - partial flow

As a result, the E7 stream processing is shown in Table 2. [0〇53]T^rTtr^—— But the pure water treatment time is more than 3〇t, which leads to the difference. π Where the flow in the reflow step of the whole shellfish ,, 4] Λ Example 3 yuan after the treatment (AD), in the pre-treatment single treatment, on the substrate: photoresist = resistance; Pre-purified water, Wei ^ treatment and removal of the parts, the state is the silk resistance exposed to 24t ~ 2d ( Sheng f) W as a method of making the touch silk Wei water towel, set dip in the flow r: =: Ant When pure water is called, the photoresist is exposed to the etch, Γν, ί, ί (dressing) mode, and 1 cc of pure water is placed on the photoresist. When the method of broadcasting the /5/B in pure water, the substrate is immersed in a water depth of 20 to 3 mm. When the method of blowing water-like pure water is used, the distance from the water-air outlet is set to 500_. Six friends, the air is blown by the air and the dry air is the air that is blown toward the pure water on the substrate. The pressure source and pressure in the second gas are Q2MPa, the distance from the blowing nozzle to the light blocking is 150mm, and the blowing time is about 2〇. 15 1377610 Methyl ====«于狮以 [0056] The results of this experiment are shown in Table 3. Also, do it. 1^3] Pure water treatment method 10 20 30 60 Immersion 0 〇〇〇流水〇〇〇〇水气〇〇〇〇〇〇〇〇[0057] Time _4^^^金示' f On the pure water treatment method, pure water treatment line.纟,, and 4, the flow processing in the 'reflow step' can be completely true [0058] In the case of Example 4, ^ί m pre-processing unit (preT) processing (pre-processing) line flush = up dew = ^The established time, after which, the result is pure water, and after the treatment, the solid surface of the German (ad), after which the Wei reflux treatment τ_[ΓΓ甲] 气== the condition of the former, the developer is the concentration 2.38% of 99 (four), &===, () () times (_ version, pure water ~ 3〇 η ^ ί ^ ί 彡 ^, silk plate G immersion · riding water depth of 2 〇 5 conditions [ f 2 疋 time (5sec, 10μ, 2〇sec, 3〇Sec, 60Sec, water depth is 2G~i_f ^(4) Correction, only the plate G is immersed in the developer, all the photoresist is 4 is turned over 3 Second. If this job is dipped, it will be used for 3 seconds, 16 (pure water 乍t first t divided by running water to expose to 24%.~24.5.. Blowing the [ΓΓ] air gas grabbing the dry air for the The pure water on the substrate from the blown material to the light prevents the methyltrinitrogen solution from being diluted: the test results are shown in Tables 4 and 5. In addition, the development of Table 4 is △, when it is not flowing at all, one [Table 4 】 Incomplete developer treatment between F (s Ec ) 5 10 20 30 60 U Δ 厶0 sputum treatment time [sec) sputum treatment method [Table 5] 5 έ 5 Ζ ΙΗΖ ΙΗΖ ΙΗΖ ΙΗΖ ΙΗΖ ΙΗΖ 稀释 稀释 稀释 稀释 稀释 ^ ^ ^ ^ ^ ^ ^ ^ ^ 影 影 影 影, the flow time in the reflow step can be completely implemented, and when the developer is diluted, the development process treats the dream shoe eclipse, and the clearing A can be flow-processed in the full-flow reflow step, but the circumference is narrow. Therefore, the cooperation between the two departments is a pre-discrimination. The method, [can be used to confirm the effect of the substrate treatment according to the invention, which is not in the form of the application. [Industry utilization/J·sheng The step of the present invention applicable to the pattern crossing the plurality of patterns is suitable for use in the electronic component manufacturing industry, etc. 17 f Schematic description J [0065]

Reflow pattern of the method of forming 裒 Figure 2 shows the pre-processing unit Figure 3 shows the reflow pattern

Fig. 5 is a cross-sectional view showing a schematic configuration of another embodiment of the pretreatment unit. Fig. 6 (a) to (e) are cross-sectional views showing a schematic configuration of a substrate cross-section of a step of performing a reflow process in forming a TFT. The substrate processing step of the case forming device. -I * *_ t λ_ !_ __ The processing method of the substrate processing method. Fig. 7 (a) to (c) are sectional views of the substrate for explaining the processing steps of forming the TFT after the step of Fig. 6. [Description of main component symbols] [0066] A, B: Arrow developer solution 基板: Substrates S1 to S6: Step Tg: Target pure water 1: Reflow pattern forming device 2: Substrate cassette station (C/S) 3: Substrate processing Part 4: Substrate conveying section 4a: Arm section 5: Hydrophobization processing unit (AD) 6: Cooling unit (c〇i) 7: As processing unit (PreT) 1377610 8: Reflow unit (RP) 9: Buffer unit (Buf) . 10: Heat treatment device (HP/COL) 11: Buffer unit (Buf) '15: Horizontally moving conveyance path 16, 17: Chamber unit 16a: Delivery port (inlet) 16c: Drain port 17a: Feeding port 17b: delivery port #17c: drain port 19: transport drive mechanism 20: nozzle 21: pure water supply mechanism 22: blowing nozzle (air blowing nozzle) 23: blowing mechanism 24: developing solution nozzle 25: developing solution supply mechanism 26: pure Water nozzle φ 27: pure water supply mechanism 30: control unit 50: • coating development processing device (COT/DEV) 51: exposure device (Exp) 52: name device (Etching) 200: glass substrate 201: gate electrode 202: Insulation layer 203: Si layer 203a: a-Si layer (undoped amorphous Si layer) 203b: n+a-Si layer (scaled amorphous Si layer) 39 1377610 205: Metal layer 206: light Resistance pattern 207: metamorphic layer

Claims (1)

u//610 VII, Shen Yu patent scope: Department = in the photoresist _ solution 'and form a new exposed in ^ ^ Lang Huan _ fresh silk _ case _ time _ storm and shade the area d (the fourth) air To remove _ pure water; and expose the photoresist pattern to a solvent atmosphere to dissolve it, 2. If the substrate processing method of the application of the third item is applied, 3 Fig. ==: The f is used to make the photoresist and before the step of making the second film of the underlying film • Reduce the film side mask to make the money in the case of the mosquito in the water in the step of 1 in the water, or blow the air on the substrate, after the step to 'implement the step of hydrophobizing the substrate . '人,' 7 4. A substrate processing method for forming a photoresist pattern of a photoresist pattern formed on a substrate, characterized in that the following steps are carried out: ???solution, and forming a photoresist pattern for use in an etch mask newly exposed on a film. Purging the substrate to supply pure water for a predetermined period of time to wash off the developer; blowing air on the substrate to remove the pure water; and domain 0 exposing the photoresist to a solvent atmosphere to dissolve it And masking the predetermined area 21 1377610, wherein the developer concentration or the pure water is in a predetermined ratio. 5. The substrate treatment method according to the fourth aspect of the patent application is 2. 38% of the TMAH (tetraf-argon arsenate) aqueous solution. Dilute the TMAH aqueous solution for 10 seconds. 6. If the application scope is 4#5, the water is used to wash off the developer, to X. Eight, the pattern: twenty two