TWI377331B - Manufacturing apparatus and manufacturing method for carbon nanotube heat sink - Google Patents

Description

1377331 101 years 08 with 07 correction replacement page six, invention description: [Technology of the invention] [0001] The present invention relates to a heat sink preparation apparatus and method, and more particularly to a carbon nanotube heat sink preparation device and method. [Prior Art] [0002] Since the early 1990s, nanomaterials represented by carbon nanotubes have attracted great attention due to their unique structure and properties. The carbon nanotubes have the advantage of being mechanically strong and having a low density. In recent years, with the deep research on Nai (four) management research (four), its application prospects are constantly emerging. For example, due to the unique electromagnetic, optical, mechanical, and chemical properties of carbon nanotubes, a large number of applications related to their applications in field emission electron sources, sensors, germanium optical materials, and soft ferromagnetic materials have been reported. . Since the carbon nanotubes have good thermal conductivity along their radial direction, the carbon nanotube array can be used as a heat sink in the semiconductor field. Please refer to the heat sink disclosed in Chinese Patent Application No. CN1 964028A, filed on Nov. 11, 2005, which is hereby incorporated by reference. The heat sink includes: a substrate and a plurality of carbon nanotubes. The substrate has a first surface and a second surface opposite the first surface. The plurality of carbon nanotubes penetrate the second surface of the substrate from the first surface and extend outward. Preparation method of the heat sink

The method specifically includes the steps of: providing a substrate; forming a plurality of carbon nanotubes on the substrate; and fixing a substrate at one end of the plurality of carbon nanotubes to remove the substrate. The heat sink prepared by the method can be used as a heat sink fin by using a carbon carbon. However, the heat density of the carbon nanotubes in the heat sink prepared by this method is relatively large, so that the heat in the carbon nanotubes is not easily transmitted to the office. 5 09_Product No. Α〇101 Page 4 / Total 32 pages 1〇 13299661 -〇Γ377331, therefore, the heat convection effect of this kind of radiator is poor. 1101.08 months gt; day correction; 1 [〇〇〇4] In order to overcome the above problem, "Chip cooling with integrated carbon nanotube microfin architectures" (K Kordas et al. Appl. Phys.

A heat sink and its system are disclosed in Lett. 90. 123105 (2007)

Preparation method. The heat sink comprises a crucible substrate having a matrix of 10 x 10 carbon nanotubes grown in a matrix, the carbon nanotube array having a size of 1.2 x 10 x 10 cubic millimeters. The method for preparing the heat sink comprises the steps of: growing a carbon nanotube array on a crucible substrate; processing the carbon nanotube array with a pulsed laser at a scan rate of 50 mm/sec to enable the laser treated nanometer The carbon tube is removed, thereby forming a 1 〇χ 1 carbon nanotube array 歹! " 玄 散热 heat dissipation benefits between the various carbon nanotube arrays - a fixed gap, thereby improving the heat convection effect of the radiator. _] However, the above-mentioned method for preparing the heat dissipation H is such that since the substrate for growing the carbon nanotube array is a flat surface, only one carbon nanotube can be formed on the substrate at a time, so that each time Only a heat sink can be made from the array of carbon nanotubes that are lent on the substrate. Therefore, the preparation method of the heat dissipator is costly and inefficient. SUMMARY OF THE INVENTION [6] There is a need for a device for efficiently preparing a carbon nanotube heat sink and a method for preparing a carbon nanotube heat sink using the device. A device for preparing a carbon nanotube heat sink, comprising: a substrate having a surface, wherein a plurality of first-nano tubes and a plurality of second carbon tubes are formed on a surface of the substrate On the surface of the base (4)

a plurality of grooves are provided, the grooves having a bottom surface _962 lux numbered surface 5th page / a total of 32 S 1013299661-0 1377331 101. The modified replacement page is grown on the surface of the substrate, The second carbon nanotube is grown in the bottom surface of the groove, the second carbon nanotube is beyond the surface of the substrate, and the first and second carbon nanotubes are all from the substrate toward the same growth direction. For growth, the first carbon nanotube and the second carbon nanotube have the same length, and a height difference between the free end of the first carbon nanotube and the free end of the second carbon nanotube.

[0008] A method for preparing a carbon nanotube heat sink, comprising the steps of: providing a substrate; forming a groove on a surface of the substrate; and growing a plurality of first nanocarbons in the same direction on the substrate And a plurality of second carbon nanotubes, wherein the first carbon nanotube is grown on the surface of the substrate, and the second carbon nanotube is grown in a bottom surface of the recess, the second nano tube The carbon nanotubes extend beyond the surface of the substrate, the first carbon nanotubes and the second carbon nanotubes have the same length, and the free ends of the first carbon nanotubes and the free ends of the second carbon nanotubes have a a height difference; providing a first substrate and a second substrate, fixing a free end of the first carbon nanotube farther from the substrate in the first substrate; and fixing the free end to the first in the first substrate The carbon nanotubes are removed from the substrate, and are independently formed on the first substrate to obtain a first carbon nanotube heat sink; the free end of the second carbon nanotube is fixed to the second substrate a second carbon nanotube having a free end fixed in the second substrate from the substrate In addition, single-site so formed on the second substrate to obtain a second carbon nanotube radiator. [0009] Compared with the prior art, the apparatus for preparing a carbon nanotube heat sink according to the present invention includes a substrate having a plurality of first carbon nanotubes and a plurality of second nanocarbons formed on the surface of the substrate a tube, and a height difference between the free end of the first carbon nanotube and the free end of the second carbon nanotube 98912962# Vehicle number deletion 1 Page 6 / Total 32 pages 1013299661-0 Γ 377331

Correction replacement page for 10 years _ August 07. The apparatus for preparing a carbon nanotube heat sink can prepare a plurality of carbon nanotube heat sinks, improve the preparation efficiency of the carbon nanotube heat sink, and reduce the production cost. [Embodiment] [0010] For the purpose of the present invention The following further embodiments are described in detail below with reference to the accompanying drawings. [0011] Please refer to FIG. 1, which is a flow chart of a method for preparing a carbon nanotube heat sink according to an embodiment of the present invention. 2 to FIG. 7 are process flow diagrams of a method for preparing a carbon nanotube heat sink according to a specific embodiment of the present invention. The method includes six steps from S10 to S60. [0012] Step S10, referring to FIG. 2, a substrate 12 is provided. The substrate 12 has a first surface, that is, a bottom surface, and a second surface, that is, a top surface, and the first surface is parallel to the second surface. The second surface is provided with a plurality of mutually spaced grooves 130 such that the substrate 12 is formed with two different heights and spaced apart from each other by the first growth surface 120 and the second growth surface 140. The grooves 130 are arranged in a lattice on the second surface of the substrate. The first growth surface 120 and the second surface of the substrate 12 are coplanar. The bottom surface of the recess 130 is the second growth surface 140. The height of the first growth surface 120 is higher than the height of each of the second growth surfaces 140. [0013] The substrate 12 may be a P-type or N-type germanium substrate, or a germanium substrate formed with an oxide layer. In the embodiment, the substrate 12 is a ruthenium substrate. The shape and number of layers of the groove 130 are not limited. It can be understood that the groove 130 can be a layer of grooves, a two-layer groove, a three-layer groove or an N-layer groove or the like. The distance from the bottom surface of the same layer groove to the first surface of the substrate 12 is equal, and the distance from the bottom surface of the groove of the different layers to the first surface of the substrate 12 is not equal. The groove 1013299661-0 09812062^ single number A 〇 101 page 7 / total 32 pages 1377331 101. 08. 07 桉 g g g page 130 can be stepped or stepped, as shown in Figure 8, It can also be set to be concentric, as shown in Figure 9. The grooves 130 may be formed in a staggered array of dots on the surface of the substrate 12, as shown in Fig. 13 "the grooves 130 may be formed by casting or surname the substrate 12. As shown in FIG. 11, in the present embodiment, six recesses 130 are formed on the cymbal substrate 12. The six grooves are arranged in a 3x2 dot pattern on the surface of the ruthenium substrate 12, that is, the six grooves are arranged in two rows, and three grooves 130 are arranged at intervals of each row. Each of the grooves 130 has only one layer and the bottom surface of each groove 130 is a second growth surface 140, and the shape of the second growth surface 14 is rectangular. [0014] Step S20, referring to FIG. 3, forming a carbon nanotube array having substantially the same length on the first growth surface 120 and the second growth surface 14 of the substrate 12, wherein the first surface of the substrate 12 is formed. The carbon nanotube array on the growth surface 120 is a first carbon nanotube array 1 , and the carbon nanotube array formed on the second growth surface 丨 4 为 is a second carbon nanotube array 2 〇 ^ first The carbon nanotube array 10 and the second carbon nanotube array 2 have the same growth direction. The length of the carbon nanotube array grown is controlled such that the carbon nanotubes in the second carbon nanotube array 20 extend beyond the first growth surface 基板2 of the substrate 12 (which is higher than the first growth surface 120) The second growth surface 14 is, and the first carbon nanotube array 10 and the second carbon nanotube array 2 are the same length. Therefore, the first carbon nanotube array 1 is higher than the second carbon nanotube Array 2 〇, that is, the free end of the first carbon nanotube array 1 及 and the free knowledge of the second carbon nanotube array 2 Ϊ have a degree of difference. [0015] Please refer to FIG. 10, in the The method of forming the first carbon nanotube array 丨〇 and the second carbon nanotube array 20 on the growth surface 120 and the second growth surface 140 respectively comprises the following steps: 09812962#单号A0101 Page 8 of 32 1013299661-0 Γ 377331 [0016] 101. August 07, the revised replacement page step S201, a catalyst layer is uniformly formed on a partial region of the first growth surface 120 of the substrate 12 and the second growth surface 140. The material of the catalyst layer may be one of alloys of iron (Fe), cobalt (Co), nickel (Ni) or any combination thereof. The catalyst material of Example of the present embodiment is iron.

[0017] The region where the catalyst is formed on the first growth surface 120 of the substrate 12 may be of any shape. In this embodiment, referring to FIG. 11, the shaded area is a region where a catalyst is formed, wherein the catalyst region 50 formed on the first growth surface 120 of the substrate 12 is 8 rectangular regions arranged in a 4×2 arrangement, and each rectangular region is Adjacent to a groove 130. The grooves 130 are arranged in two rows, and the catalyst regions 50 are arranged in parallel with the grooves 130 and spaced apart. The groove 130 and the catalyst region 50 form two rows parallel to each other. The catalyst regions formed in the grooves 130 in Fig. 11 are a plurality of rectangular regions arranged in a 3x2 arrangement. [0018] Step S202, the substrate 12 on which the catalyst layer is formed is annealed in air at 700 ° C to 900 ° C for about 30 minutes to 90 minutes. [0019] Step S203, placing the annealed substrate 12 in a reaction furnace, heating to 500 ° C to 740 ° C in a protective gas atmosphere, and then introducing a carbon source gas for about 5 minutes to 30 minutes to react on the substrate. The region 50 in which the first growth surface 120 of the 12 is formed is grown to obtain the first carbon nanotube array 10, and the second growth surface 140 is grown to obtain the second carbon nanotube array 20. Among them, the carbon source gas may be selected from acetylene, ethylene, decane and other chemically active hydrocarbons, and the shielding gas is nitrogen or an inert gas. In the present embodiment, the carbon source gas is acetylene and the shielding gas is argon. Since the first carbon nanotube array 10 and the second carbon nanotube array 20 are simultaneously produced by the process of growing the carbon nanotubes, the first carbon nanotube array 10 and the second nanometer 1013299661-0 09812962 #单编号A〇101 Page 9 of 32 pages 1373731 The following is the replacement of the carbon nanotube array 20 in the carbon nanotube array 20 growth time and growth rate are the same, so the first carbon nanotube array The lengths of 10 and second carbon nanotube arrays 20 are substantially the same.

[0020] Step S30, referring to FIG. 4, a first substrate 18 is provided, and the substrate 12 and the carbon nanotube arrays 10, 20 grown thereon are inverted to make the first carbon nanotube array 10 far away. The free end of the substrate 12 is fixed in the first substrate 18. Alternatively, the substrate 12 and the carbon nanotube arrays 10 and 20 grown thereon may not be inverted, and the free ends of the first carbon nanotube array 10 remote from the substrate 12 may be fixed to the first substrate. 18 in. [0021] The material of the first substrate 18 may be a polymer phase change material or a low-burn metal material.

[0022] The polymer phase change material refers to a polymer that can be melted at a certain temperature (phase change point), for example, ruthenium rubber, polyester, polyvinyl chloride, polyvinyl alcohol, polyethylene, polypropylene, ring Oxygen resin, polyacetal, polyacetal or paraffin. Optionally, at least one additive is added to the polymeric phase change material. The additive may also be a polymer. Additives are used to improve the flexibility and stability of the polymeric material, as well as to adjust the phase transition temperature of the polymeric material, such as the addition of dimercaptosulfoxide to the paraffinic matrix material. Alternatively, the polymeric matrix material is filled with particles of non-carbon nanotube heat conductive material. The content of the non-carbon nanotube heat conductive material particles in the thermal interface material is between 0.1 wt% and 5 wt%, and the particles are thermally conductive and non-directional to improve the thermal conductivity of the thermal interface material. The non-nanocarbon tube heat conductive material particles include nano metal powder and nano ceramic powder such as aluminum, silver, copper, aluminum oxide, aluminum nitride, boron nitride and the like. 09812962Bill No. A〇101 Page 10 of 32 1013299661-0 [0023] [0023] 1377331 [0024]

The low-melting-point metals mentioned in the previous year, including the tin, copper, indium, lead, recorded, gold, silver, Syrian, and alloys or mixtures of the foregoing materials, such as tin-lead alloy, indium tin alloy, tin-silver Copper alloy, gold-bismuth alloy, gold-bismuth alloy, and the like. In the embodiment, the material of the first substrate 18 is paraffin, and the thickness of the first substrate 18 is 1 mm. In this embodiment, the height of the carbon nanotubes in the first carbon nanotube array 10 is 3 mm, in which the carbon nanotubes have a height of 丨 mm and are located in the paraffin base, and the 2 mm high carbon nanotubes are exposed to the air. The method for fixing the free end of the first carbon nanotube array 10 away from the substrate 12 in a first substrate 18 specifically includes the following steps: Step S301, moving the first carbon nanotube array 1 远离 away from the substrate The free end of 12 is immersed in a first substrate material in a molten state, and the second carbon nanotube array 20 is not & into the first substrate material in the molten state; step "o?, curing the first [0025] The first substrate 18 has opposing first and second surfaces 18 and 182. The first array of carbon nanotubes extends from the first surface 180 of the first substrate 18 to the The second surface 182 extends outwardly in a direction perpendicular to the second surface 182, that is, the first carbon nanotube array 1 〇 penetrates the first substrate 18. The thickness of the first substrate 18 is determined according to actual needs as needed The magnitude of the amount of heat dissipation, and the magnitude of the holding force of the desired carbon nanotubes. Preferably, the thickness of the first substrate 18 is 〇.i mm to 丨cm. The freedom of the second carbon nanotube array 20 Forming a gap 17 between the end and the first substrate 18 to make the second carbon nanotube array 2〇 is not in contact with the first substrate 18. [0026] Step S40, referring to FIG. 5, the first carbon nanotube array 1〇 is removed from the first growth surface 12〇 of the substrate 12 to make the first carbon nanotube The array 1 is separated from the substrate 12 and formed on the first substrate 18 independently to obtain the first nano carbon 09812962^^^51 A0101 Π page / total 32 pages 1013299661-0 1377331 101. The first carbon nanotube heat sink 100 includes a first substrate 18 and a first carbon nanotube array 1 , and the first carbon nanotube array 1 〇 penetrates the first substrate 18 . In the example, the first carbon nanotube array 1 is 8 rectangular regions arranged in a 4x2 arrangement and spaced apart from each other. Since the 8 rectangular regions are arranged at intervals, the carbon nanotube density is small, so that the carbon nanotubes are in the carbon nanotubes. The heat is easily conducted to the air, so the heat convection effect of the carbon nanotube heat sink is better. [0027] There are various methods for removing the first carbon nanotube array 10, such as mechanical grinding, chemical etching, and the like. In this embodiment, the method of removing the first carbon nanotube array "10" is to directly pull the first base. The bottom 18 detaches the first carbon nanotube array from the first growth surface 120 of the substrate 12. Since the first carbon nanotube array 10 is only grown on the surface of the substrate 12, the first carbon nanotube array is the same as the substrate 12. The bonding force is weak. However, the first carbon nanotube array 1 〇 penetrates the first substrate 18 and is fixed to the first substrate ist, and the first carbon nanotube array 10 has a strong binding force with the first substrate 18. Therefore, The first carbon nanotube array 1 and the substrate 丨 2 are separated by a small force to obtain the first carbon nanotube heat sink 100. 4 [〇〇28] Alternatively to the first heat sink 1 The second surface 182 of the first substrate 18 of the crucible is etched to remove portions of the first substrate material to expose more of the carbon nanotubes. The method of etching the first substrate material may be an oxygen plasma etching or an acid etching method. If the material of the first substrate is paraffin, the paraffin wax may be removed by oxygen plasma etching to cause the first heat sink 1 to leak out of the carbon nanotubes. If the material of the first substrate 18 is a low melting point metal, the metal base material is corroded with acid. Thereby leaking the carbon nanotubes. The first carbon nanotube array 10 has an outcrop on the first surface 180 and the second surface 182 of the first substrate 18, so that the first heat sink 1〇{) 〇9812962 is produced by the number A0101, page I2, total 32 pages. 1013299661-0 Γ377331 August 101 ΟV-day is connected (4) to better contact with heat source or air, so that the heat dissipation effect of the first heat sink 100 is better.

[0029] Step S50, referring to FIG. 6, a second substrate 22 is provided, and the substrate 12 and the second carbon nanotube array 20 grown on the second growth surface 140 are inverted, and the second nanometer is inverted. The free end of the carbon nanotube array 20 remote from the substrate 12 is fixed to the second substrate 22. Alternatively, the substrate 12 and the second carbon nanotube array 20 grown on the second growth surface 140 may not be inverted, and the free ends of the second carbon nanotube array 20 away from the substrate 12 may be fixed. In the second substrate 22 . Step S50 is similar to step S30. The material of the second substrate 22 is a polymer phase change material or a low melting point metal material. The material of the second substrate 22 may be the same as or different from the material of the first substrate 18. In this embodiment, the material of the second substrate 22 is paraffin wax. The method of fixing the free end of the second carbon nanotube array 20 away from the substrate 12 in the second substrate 22 and the step of disposing the first carbon nanotube array 10 away from the substrate 12 in step S30 The method in which the free end is fixed in a first substrate 18 is similar. The method of fixing the free end of the second carbon nanotube array 20 away from the substrate 12 in the second substrate 22 includes the following steps: Step S501, moving the second carbon nanotube array 20 away from the substrate 12 The free end is immersed in a molten second substrate material; in step S502, the second substrate material is cured. Since the carbon nanotubes in the prepared second carbon nanotube array 20 exceed the first growth surface 120 of the substrate 12 in step S20, the free end of the second carbon nanotube array 20 can be fixed to In the second substrate 22. [0030] Step S60, referring to FIG. 7, the second carbon nanotube array 20 is removed from the second growth surface 140 of the substrate 12, and the second carbon nanotube array 20 is removed from the 09012962 production number Α〇101. Page 13 / Total 32 pages 1013299661-0 1377331 101 August 0> Day correction replacement page is separated from the substrate 12 to be independently formed on the second substrate 22 to obtain the second carbon nanotube heat sink 200. The second carbon nanotube heat sink 20 0 includes a second substrate 22 and a second carbon nanotube array 20. In the present embodiment, the second carbon nanotube array 20 is removed by directly drawing the second substrate 22 to detach the second carbon nanotube array 20 from the second growth surface 140 of the substrate. In the present embodiment, the second carbon nanotube array 20 is 6 rectangular regions arranged in 3x2 and spaced apart from each other. Since the six rectangular regions are arranged at intervals, the density of the carbon nanotubes is small, so that the heat in the carbon nanotubes is easily conducted to the air. Therefore, the heat convection effect of the carbon nanotube heat sink is better. Stomach [0031] Alternatively, the surface of the second carbon nanotube heat sink 200 formed with a carbon nanotube is etched to expose more of the carbon nanotubes. The method of etching the second carbon nanotube heat sink 200 is the same as the method of etching the first carbon nanotube heat sink 100.

[0032] In this embodiment, the substrate 12 having a layer of grooves 130 can simultaneously prepare two carbon nanotube arrays at different levels, that is, the first carbon nanotube array, in the process of growing the carbon nanotube array. 10 and a second carbon nanotube array 20. It can be understood that if the stepped groove 130 of the first growth surface 120 of the substrate 12 is a two-layer groove, the preparation method of the carbon nanotube heat sink provided by the present invention can be used in a single growth. Three carbon nanotube heat sinks were prepared during the carbon nanotube array process. If the groove on the substrate 12 is an N-layer groove, the preparation method of the carbon nanotube heat sink provided by the present invention can prepare N + 1 Nye in the process of growing the carbon nanotube array once. Carbon tube radiator. Referring to FIG. 12, a carbon nanotube array having three different heights is grown on a substrate 12 having a two-layer groove provided by the present invention, and the carbon nanotube array includes a plurality of carbon nanotubes, and the number is 10912962^^^ ^ A〇101 Page 14 of 32 Page 1013299661-0 Γ377331 101.08.08 gt; Day nucleus replacement page With the substrate 12, three carbon nanotube heat sinks can be prepared at one time. [0033] The apparatus for preparing a carbon nanotube heat sink according to the present invention includes a substrate having a plurality of first carbon nanotubes and a plurality of second carbon nanotubes formed on a surface thereof, and There is a height difference between the free end of the first carbon nanotube and the free end of the second carbon nanotube. The device for preparing a carbon nanotube radiator can prepare a plurality of carbon nanotube radiators, thereby improving the preparation efficiency of the carbon nanotube radiator and reducing the production cost. BRIEF DESCRIPTION OF THE DRAWINGS [0034] FIG. 1 is a flow chart of a method for preparing a carbon nanotube heat sink according to an embodiment of the present invention. 2 to FIG. 7 are process flow diagrams of a method for preparing a carbon nanotube heat sink according to an embodiment of the present invention. 8 is a plan view of a substrate having two stepped grooves used in a method of fabricating a carbon nanotube heat sink according to an embodiment of the present invention. 9 is a plan view of a substrate having concentric grooves for use in a method for preparing a carbon nanotube heat sink according to an embodiment of the present invention. [0037] FIG.

10 is a flow chart of a method for preparing a carbon nanotube array used in a method for preparing a carbon nanotube heat sink according to an embodiment of the present invention. 11 is a schematic view showing a region where a catalyst is formed on a surface of a substrate in a method for preparing a carbon nanotube heat sink according to an embodiment of the present invention. 12 is a front view of a preparation apparatus of a carbon nanotube heat sink having a two-layer groove used in a method for preparing a carbon nanotube heat sink according to an embodiment of the present invention. 13 is a schematic view of a substrate having staggered grooves used in a method for preparing a carbon nanotube heat sink according to an embodiment of the present invention. 09812962#单号A〇101 Page 15/32 pages 1013299661-0 1377331 101.08.07 Revision 7 &Page [Key component symbol description] [0042] First carbon nanotube array: 1 0 [ 0043] Substrate: 12 [0044] Gap: 1 7 [0045] First substrate: 18 [0046] Second carbon nanotube array: 20 [0047] Second substrate: 22 [0048] Catalyst region: 5 0 [0049 First carbon nanotube heat sink: 100 [0050] First growth surface: 120 [0051] Groove: 130 [0052] * Second growth surface: 140 [0053] First surface of the first substrate: 180 [ 0054] Second surface of the first substrate: 182 [0055] Second carbon nanotube heat sink: 200

09812962#单号 A〇101 Page 16 of 32 1013299661-0

Claims (1)

101: Amendment to August 07, _ pp. 1.377331 VII. Patent application scope: 1. A device for preparing a carbon nanotube heat sink, comprising: a substrate having a surface, wherein a surface of the substrate is formed a plurality of first carbon nanotubes and a plurality of second carbon nanotubes, wherein the surface of the substrate is provided with a plurality of grooves, the groove has a bottom surface, and the first carbon nanotubes are grown on the On the surface of the substrate, the second carbon nanotube is grown in a bottom surface of the recess, the second carbon nanotube is beyond a surface of the substrate, the first and second nanocarbons The tubes are all grown from the substrate in the same growth direction, the first carbon nanotube and the second carbon nanotube have the same length, and the free end of the first carbon nanotube and the free end of the second carbon nanotube The apparatus for preparing a carbon nanotube heat sink according to claim 1, wherein each of the plurality of grooves is an N-layer groove, wherein N Greater than or equal to 1. 3. The apparatus for preparing a carbon nanotube heat sink according to claim 2, wherein, when the N is greater than or equal to 2, the N-layer groove is stepped or stepped. 4. The apparatus for preparing a carbon nanotube heat sink according to claim 2, wherein, when the N is greater than or equal to 2, the N-layer grooves are concentric. 5. The apparatus for preparing a carbon nanotube heat sink according to claim 2, wherein the plurality of grooves are formed in a staggered array on the surface of the substrate. 6. The apparatus for preparing a carbon nanotube heat sink according to claim 2, wherein, when the N is greater than or equal to 2, the second carbon nanotube comprises a plurality of carbon nanotubes having different heights. 09812962^^^#u A〇101 Page 17 of 32 1013299661-0 1377331 Modified on August 07, 2011. Replacement page 7. Preparation device for carbon nanotube heat sink according to claim 2 Wherein * the distance from the bottom surface of the same layer of grooves in each of the grooves to the surface of the substrate is equal. 8 . The method for preparing a carbon nanotube heat sink, comprising the steps of: providing a substrate; forming a groove on a surface of the substrate; And growing a plurality of first carbon nanotubes and a plurality of second carbon nanotubes on the substrate in the same direction, wherein the first carbon nanotubes are grown on the surface of the substrate in the bottom surface of the recess Growing the second carbon nanotube, the second carbon nanotube is beyond the surface of the substrate, the first carbon nanotube and the second carbon nanotube have the same length, the first carbon nanotube The free end has a height difference from the free end of the second carbon nanotube; a first substrate and a second substrate are provided, and the free end of the first carbon nanotube farther from the substrate is fixed to the first In the substrate; The first carbon nanotube having the free end fixed in the first substrate is removed from the substrate, and is independently formed on the first substrate to obtain a first carbon nanotube heat sink; a free end of the carbon tube is fixed in the second substrate; a second carbon nanotube having a free end fixed in the second substrate is removed from the substrate, and is independently formed on the second substrate to obtain a Second carbon nanotube radiator. 9. The method of preparing a carbon nanotube heat sink according to claim 8, wherein the groove is an N-layer groove, wherein N is greater than or equal to 1. The method for producing a carbon nanotube heat sink according to claim 8, wherein the substrate has a thickness of 0.1 mm to 1 cm. 11. A method for preparing a carbon nanotube heat sink according to item 8 of the patent application scope 09812962^^^^ A〇101 page 18/32 page 1013299661-0 Γ377331 101 years.08 months 0> Wherein the method of fixing the free end of the first carbon nanotube farther from the substrate to the first substrate comprises the steps of: immersing the free end of the first carbon nanotube into the first state of a molten state In the base material; curing the first base material; the method of fixing the free end of the second carbon nanotube closer to the second substrate in the second substrate comprises the step of: second carbon The free end of the tube is immersed in a molten second substrate material; the second substrate material is cured. 12 The method for preparing a carbon nanotube heat sink according to claim 8, wherein the first base material comprises a polymer phase change material or a low melting point metal material; and the second base material comprises a polymer phase Variable material or low melting point metal material. 13. The method for preparing a carbon nanotube heat sink according to claim 8, wherein the first carbon nanotube and the second carbon nanotube have the same length " 09812962^^« A〇101 Page 19 of 32 1013299661-0