TWI376785B - Methdo to reduce plasma-induced charging damage - Google Patents

Description

1376785 Sexual gas chemical composition. In some deployments, performing pre-conversion compensation includes setting a source power-to-bias power ratio within a range of about one less than the conversion. In some deployments, performing pre-conversion compensation includes a starting application that biases power on the working component prior to the process transition.

In some deployments, a method is provided for suppressing charging damage on a working component in a plasma processing chamber during a process transition from one process step to another process step, the method comprising A smooth non-linear transition changes at least one process parameter. In some deployments, the changed process parameters include a stepwise change from a first stable state to a transition state and a stepwise change from the transition state to a second stable state. In some deployments, the process parameters are changed along a Boltzmann curve or a Sigmoidal Richards curve. In some deployments, the change in process parameters includes changing at least one of: a plasma power, a bias power, a gas flow, a chamber pressure, or a magnetic field strength. In some deployments, a method is provided for suppressing charging damage on a working component in a plasma processing chamber during a process transition from one process step to another, which includes continuously changing the plurality of The process parameters are such that a plasma can be stabilized after each change after changing the next selected process parameter. In some deployments, changing the process parameters of the complex includes providing an inactive gas chemistry in the cavity prior to changing other process parameters. In some deployments, changing the process parameters of the complex 7 1376785 involves changing the power of a power supply after adding a cavity pressure. In some deployments, changing the plurality of process parameters includes changing a power supply after providing an inactive gas chemistry in the plasma processing chamber. In some deployments, changing the plurality of process parameters includes changing a power supply after initially applying a bias power to the operating component. [Embodiment]

The charging effect caused by the plasma has a strong relationship with the cavity design and process conditions. During the plasma process of the inductive integrated circuit, there is a great chance that these components will be damaged. Reducing charge damage during steady state process steps has been taken seriously. For example, during an etch or chemical vapor deposition (CVD) process, when the process parameters are actually fixed, the charge damage caused by the plasma can occur during the steady state process step. However, when the process parameters are changed, damage can also occur during the unstable state.

The problem of charging damage caused by plasma associated with the unsteady state is in the case of lower power supply frequency and high frequency plasma power. The reason for the need for high frequency plasma power is that it provides a denser plasma than the low frequency plasma power, which can facilitate high aspect ratio processing and reduced process time. Moreover, the charge damage caused by the plasma is more important when the gate oxide layer is thinned and the element size is reduced. However, the following techniques are not limited to a particular plasma reactor, frequency or process format; however, it is generally applicable to reduce charge damage in various forms of plasma processing, including deposition and etching processes. 8 1376785 Implementation example use. Double-layered in-line f dual-damascene) Multi-mode y-layer silver engraving in the short-circuit method In this example, study the plasma in a dielectric etching cavity coupled with ultra-high frequency capacitance. Uniformity and stability, which can be used in an integral forming process of a sub-65 nm dual-in-town structure. Empirical results indicate that excessive magnetic field strength and step-to-step conversion are the main variables that affect the charging effect. The stability of the battery can be compensated by controlling these process parameters. During dual damascene etching, the component structure is sensitive to charge damage caused by plasma that can cause expensive component yield loss when the metal lines are in the manufacturing order (sequence: dielectric layer etching, photoresist stripping, and barrier layer) During critical steps, when exposed to electrical plasma (electricaUy tranSparent mms) or directly exposed to process plasma, this damage is caused by an increase in charge imbalance during a component or a sudden overshoot of safe charging. The risk is quite high. During the etching through 185 or trench 195, the risk of plasma charging damage depends on the integrated structure formed by the dual damascene structure. The 疋 shown in Fig. 1 is suitable for a one-step forming etching sequence of a sub-65 nanometer node and more than seven layers of dual damascene structures. Layer 110_15 (layer 150 is assumed to be an etched hard masking film and photoresist multiple layer) is a combination of the following: photoresist, hard masking film, substance, and barrier layer. In the process of forming trenches 1 9.5 and vias 185 s s s s s s s s s s s s s s s s s s s s s s s s s The 8 G exposure, trench and cavity steps have the greatest resistance to charge damage caused by plasma. This sequence is formed in a super high 9 1376785 frequency, rate capacitively coupled dielectric etcher, and utilizes multiple steps with a combination of power and partial house power to effectively etch different materials including dual damascene stack 100 The multiple layers are 11〇_15〇. During the multilayer dual damascene stack 100 etched to form trenches 195 during the lifetime structure, the pits and the highest plasma cause the risk of charge damage due to the exposure of the lower layer of metal 18 凹. Then in the second figure, the plasma instability from one plasma condition to the other is a risk factor. The multi-step parameters are usually between the steps in the sequence, including bias power, power supply, voltage (which is controlled in some reactor type forms - charge species tuning unit or CSTU) and any During the two-step conversion, the adjusted process parameters jumped to the new set point in a simple way. If the display is on the 21〇 side of the c line, it is out of control. In addition, these process parameters start to change at each step, usually Causes multiple parameters to change until they are stable to their point. Empirical data shows that the compensation for the conversion increases the risk of charging the plasma because the plasma undergoes significant distribution, density, and energy changes. The change in complement can be expressed as plasma conductivity, which has the characteristic that energy can flow. As shown in Fig. 2, line A, the conductance is significantly proportional in magnitude for the period of 'converted to and converted from the steady state etching condition in the second step. In addition, the conductance is clearly separated from the value of the last step at the beginning and after the second step. All the indicators are made to be linked to the mouth g power supply f, these things; the mouth cavity I 8 5, the groove step condition changes during the #力, magnetic continuity unit dropout component. Single linearity: 2 1 5, or the same time before the ground is obviously electrically damaged. This unrepaired by the plasma is unrepaired (showing that the plasma in a steady state undergoes a significant change during the transition of 10 1376785. * In Figure 2, the 'B continued line shows the compensation conversion during the conversion period. Produces a more 'stable power. As shown in Figure 2, the B-fin line, the deviation of the conductance has been significantly reduced, and the conductance at the beginning and after the etching step 2 is no longer significantly deviated from the step 2 Stabilizing the skin conductance. These improvements result from careful control and the sequence of process parameters discussed below, which are modified and can be universally implemented throughout the etching process, or any other plasma process sequence. • Therefore 'Figure 2 It is shown that as the plasma conductance normalizes the steady state conductance of a single-step process, the compensated transition of the B-line is usually in a smaller deviation mode. • The flattened 'A-line's uncompensated transition is significantly deviated. These changes Table. Ming compensated plasma is more stable when converted from one plasma state to another. Figure 3 shows empirical data demonstrating that the risk of damage can be reduced when using compensated conversions. The degree of reduction in the risk of a single-step etch process is shown in Table 1 in Figure 3. In particular, the uncompensated conversion-to-antenna ratio is 200. 1 and 100, respectively, resulting in 32% and 79 for 〇〇〇: } % leakage current yield. • These yields are improved to 97% and 99.55% respectively with compensation conversion. Similarly, the EEPROM-type sensor formed by this single-step etching is the same as Table 1. The improvement shown in the end. Finally, when using compensated conversion, the external _ power supply (externai_s〇urce) gate breakdown voltage meets the 1% yield criterion. For unmodified conversions, the antenna ratio is & 1〇〇〇: [and 1〇〇'〇〇〇·1, the yields are 88% and 37%, respectively, both of which are unacceptable values. For the stability of the 'temporary compensation solution' Using a EEPROM type 11 1376785 sensor to test a multi-t step sequence for etching a complex multi-layer dual damascene stack. EEPROM-type sensors for unpatched multiple step sequences s, the results of the identification use the big power and Current response (shown in Figure 5 Grid!) as a sign shows - very large risk of damage. Combined with the compensation conversion to the same sequence, the EEPROM sensor voltage and current are reduced to an acceptable level. In addition, the 200 mm antenna metal oxide semiconductor capacitor gate The breakdown voltage meets the 100% yield standard. According to these data, the instability of the plasma and the risk of charge damage caused by the plasma can be minimized by the compensation conversion between successive plasma etching steps. Therefore, in the dual mosaic In the process environment, a high risk factor due to the charge sensitivity of the plasma can be compensated to reduce the plasma charging damage. The plasma instability occurring during the transition from one plasma state to another can be make up. By continuously controlling the plasma state during a transition, the plasma can be more stable and can reduce the charging effect. As this risk factor is mitigated, a continuous etching process without a plasma charging damage project, such as etching and ashing of complex multilayer stacks, can be developed. This feature makes it possible to form integrally formed cavities and grooves that are required for a dual damascene process.参数 Γ 的 的 的 的 的 的 的 的 的 的 的 另外 另外 另外 另外 另外 另外 另外 另外 另外 另外 另外 另外 另外 另外 另外 另外 另外 另外 另外 另外 另外 另外 另外 另外 另外 另外 另外 另外 另外 另外 另外 另外 另外 另外 另外 另外 另外 另外 另外In step 1, the plasma can be controlled to cause charging damage and the recommended process window is significantly increased. Process parameters that can be used to reduce plasma damage are discussed further below. By 12 1376785 by controlling the process power and power ratio; process pressure; system amp & mad chemical composition intensity; and conversion jump point, rate, for the above parameters, % 竿 form low charge damage" control power than power rate 沬 ^ ^ - The method used to reduce the charging damage is to ensure that the power ratio between the power supply and the voltage power is within a low risk of damage. The 4 Α diagram is ~ graphic image, which represents a conceptual charging damage risk - ^ power power pair

A function of the bias power ratio. The risk of charging damage occurs in the power frequency process of the bias power. It can be judged that the use of a power source-only electropolymer due to the thinning and instability of the sheath thickness of the slurry, as shown in the right side of Fig. 4A, increases the risk. Due to unusual large voltage and current gradients. At some point during the process, the risk of damage is quite high. When the thickness of the sheath increases with a low bias frequency, a decrease in charging damage can be observed, demonstrating the wafer. The damage is affected by the sheath. Therefore, in order to reduce charging damage, a low power/bias power ratio Ws/Wb is required, for example, an application having some minimum amount of dust power, in a range below approximately 1.

The magnetic field can be lowered to set the low frequency power within a critical range to maintain a sufficient sheath for the high frequency power supply process without increasing the risk of damage. This low frequency power is related to the electrical destruction density and reactor form, but is typically on the order of 10 0W for an enabler reactor. The reactor is commercially available from Applied Materials, Inc Santa Clara, Ca., which has an etch tool operable at a power source above 100 MHz. When the field power ratio is controlled and maximized, the damage can be minimized by minimizing the damage to the power-to-bias power ratio, which is usually less risky, 13 1376785 especially when it has a magnetic field, because the risk is different. The bias power and magnetic field become higher. On the other hand, when the application power is changed to the power of the printed circuit, the &damage-free window increases with the equivalent magnetic field strength. . Therefore, in order to reduce the charging damage, the process using only the power supply should avoid and use a small amount of lower frequency biasing power. _ Knife Dry In addition, this is the plasma strike, plasma suppression (! (dechucking) can be established V Plasma quench) and release time in general only high frequency

During the (high-freqUenCy-〇nly) process, the inventors observed a reduction in the risk of damage during the application of low frequency bias power. Field ~ Usually 'use a magnetic field during the power frequency process to redistribute charged species such as etch molecules. When a sufficient amount of magnetic field is used, the etching rate of the entire wafer gradually becomes uniform. Therefore, the control of the magnetic field strength is a powerful uniformity of uniformity. The result of using a large magnetic field is to increase the risk of damage, since voltage and current distributions are often negatively affected when too much magnetic field is used. • Use higher pressure in the conversion to stabilize the paddle in terms of reducing charge loss—additional factor... to increase pressure to control pressure stability during the conversion step. Figure 4 is a graphical image , which represents a conceptual charge damage risk as a function of power supply to bias power ratio, indicating the effect of lower and higher pressures. As shown in Figure 4, - if the pressure increases, as indicated by the dashed Higher Pressure line, there is a lower risk of damage during the transition. Higher pressures stabilize the plasma impedance and minimize the risk of damage compared to process conversions that do not have Lili compensation. Therefore, the θ pressure between the process steps before the change of other parameters can reduce the risk of ignoring the power. In the case of the process, the process is changed to the pressure of the process without pressure repair, as indicated by the low pressure dotted line.疋0 plus charging knows the wind another - reduce the rate of shape of the process parameters in the charging damage (s', work jump point, rate and use of the change-process process to another process charge). J. °疋Sensitive. This kind of choice is related to the processing of the next process condition. The mother-variable has a & sex, especially when most variables change at the same time, the variable that needs to be changed, The mother ^^ is used for a period of about 1 second from the self-process step to another process step. In the picture 2, the 缢 仃 仃 - linear jump, as in Figure 2 The uncompensated change c is plotted after 2 S 琛 2 10 or 21 5 . These salvage whites contain low frequency bias power, high power and magnetic field strength. However, other variables, such as pressure, temperature, The amount of gas-rolling limbs and the helium pressure on the back are several variables used to reach the next set point as quickly as possible (unlimited piles of sheep). In the past, power and magnetic fields were fixed. At close to 1,00 0 W/s and 1 0 A/s β However, in order to suppress charging damage, power And the magnetic field strength jump rate as other parameters should not be bran*7, Af dog..., large or too small. Moreover, when the jump rate is smooth, the plasma will be more stable during the conversion, for example, when simulating a wave The slope of the Boltzmann curve or the -s type of the curve (1) is not changed abruptly. For example, the mann curve can represent 15 1376785 A, y

Xr is: 220 or in the process of the reaction. The plasma has a force and a body system: pressure. Importing damages the wind and is generally. In a high power supply. Of course 16 1376785

However, it can be judged that an inactive gas (e.g., argon) is present in the etching machine during the high power period in which the power supply jumps up and down from the steady state. During the period of about 1 second, other process variables change from one state to another. Once the variable reaches its final process state, the chemical composition can then be safely converted, taking into account the charge damage caused by the plasma. Similarly, argon, or other inactive gases, need to be present in the etch machine to reduce the concentration of the process gas before the steady state process conditions jump to the next state (without falling). In general, the residence time of the etching machine is required to be about 1 to 3 seconds to substantially change the concentration of the etching gas. This time must include the time it takes for the neutral gas to pass from the gas valve on the gas control panel to the reaction chamber. By using this gas flushing step, the monitored wafer returns have a lower risk of damage.

As indicated by the E line in Figure 2, the process chemistry can include introduction of gas or other inert gases for 3-5 seconds to ensure that argon has been introduced into the chamber to dilute prior to process variable conversion. Etching gas concentration. Therefore, the jump 210 or "-," in the process variable is interpreted as the residence time of the gas from the gas control panel to the chamber. This guaranteed gas can be diluted before the conversion of the variable. Gas. Similarly, argon gas is introduced for a few seconds before a process variable drops 215 or 225. Although the argon flow rate is indicated to be introduced over a jump of 210 or 22 Torr and a time of 2 丨 5 or less, conversion 210, 215, 220 Or after 225, release or maintain the retained argon in the cavity of the hanging piece, and return the gas type to the reaction gas before the end of the conversion of 210, 215, 2 20 or 22s 4 strokes. 17 1376785 Special In the deployment mode, it can be observed that if the power ratio Ws/Wb is greater than 1, in the _ line; ~ thousand nails biased y _ people money will greatly reduce the generation, :;:, 'can be expected to use other compensation methods Take a tooth, outside, s power supply, the bias power ratio ws / wb higher than i inactive gas can significantly reduce the risk of charging damage. Body,:: The text says 'although inert gas can be used as inactive Gas, other dilutions can be used in his deployment Gas phase In some processes, gas m can be used. This uses a gas such as nltrogen. Since the inert gas does not have to be an inert gas, it can be a 3-body, which dilutes the reaction gas and Limiting the change of -4 pulp or 1 and 柷) during the conversion period. Kneading the magnetic 塥 另 - - - 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低 降低The current gradient and the change to the charging risk are minimized. The research has been completed with several residual field configurations. The magnetic field radius Br and ^ ju. are modified throughout the surface of the wafer. Since only the magnetic field in the material direction will exist on the surface of the wafer, the magnetic field is a pointed configuration when the reflection m extreme condition is zero in the standby axis direction, and the radius is not zero in this configuration. An example of the release was published by Pu and Shan in 1 997 1 month 7

No. entitled "METHOD AND APPARATUS FOR PRODUCING PLASMA UNIFORMITY IN A MAGNETIC FIELD-ENHANCED PLASMA REACTOR" ' belongs to US Patent 18 1376785 No. 5, Applied Materials, Inc., Santa Clara, CA. 674,321, hereby incorporated herein by reference. The pointed configuration significantly reduces the risk of damage compared to the reflective configuration. Therefore, the risk of damage is proportional to the strength of the magnetic field in the axial direction. As mentioned earlier, the use of a high power supply to the bias power ratio of the power supply can increase the size of the lossless window, which can be further increased as the axial magnetic field strength decreases. However, the disclosure herein The method, which is used to minimize the risk of damage, will be more visibly; the semiconductor material in the money engraver. These methods are more beneficial to the process of ultimately modifying the material in a controlled mode. Certain substances are sensitive to process parameters and can affect the substance by slowing, accelerating, shifting, and or changing the way to the final state. However, by carefully controlling the process parameters and, therefore, the plasma state between the transitions between the multiple process steps and the introduction and control of the steady state transition step can control the charge damage caused by the plasma and significantly increase Recommended process operation window. For the purpose of reducing risk, the process chemistry can be controlled by introducing an alternate chemical component during the step conversion, wherein the alternative chemical composition minimizes the risk of damage and transient plasma non-uniformity. In addition, the pressure can be controlled by increasing the pressure during the conversion step and step transitions. This pressure stabilizes the beam impedance and minimizes the risk of damage. Furthermore, the low frequency bias level, etc., can be maintained at a minimum P艮 during the conversion step, for example, between the process steps, during the electropolymerization (electrical strike), and during the release (electrical suppression). 1〇〇w level) to control process power, wherein the low frequency bias level maintains a sufficient amount of electrical damage layer thickness and minimizes the risk of damage. Also, the magnetic field strength can be controlled during the conversion step and step conversion. (Size) and the direction and variation of the magnetic field minimize the risk of damage. Plasma and the rate at which the risk of damage is minimized. The rate form of the above parameters. By minimizing the relationship, the power ratio of the operating power at the frequency power source can be controlled. The voltage and current gradients caused by the self-magnetic field can be controlled by the optimization of the numerical value, and the control jump point can be controlled to speed up the specific power ratio to make the damage risk--low and high fixed frequency multiple shots.

Referring to Figures 2 and B, in some deployments, the conductance or impedance of the plasma is used as a surrogate to determine if charging damage may occur during a transition. The plasma parameters discussed herein can be compensated for by the call resistance, such as the impedance/conductivity of the plasma, and do not cover deviations above certain thresholds. The threshold value of the acceptable plasma impedance/conductivity ratio from its steady state value (the steady state value before or after the conversion) will be related to the cavity, the process form, and the process parameters.

Thus, the impedance/conductivity of the plasma can be monitored during steady state and the plasma impedance/conductivity ratio during the conversion can be compared to develop a compensation scheme for a particular system. The maximum impedance/conductivity error value in some deployments may be a percentage value that may be an absolute value when in other deployments. For example, 'If the impedance/conductivity ratio increases above about 200% of its stable value, additional compensation will be required. Conversely, if the impedance/conductance ratio is reduced by 50%, for example, compensation can be proposed to increase the bias voltage. Limit the deviation of this impedance/conductivity ratio. Similarly, one of the impedance/conductivity ratios can be used to determine if charging damage is likely to occur. Acceptable percent deviations will be based on process format, process parameters, cavity form and component structure and tolerance. Therefore, the appropriate form and compensation amount of 20 1376785 can be determined based on the impedance/conductivity ratio measurement. Moreover, measurements based on plasma impedance/conductivity ratio can limit conversion. The deployment methods disclosed herein are not limited to two frequencies, such as lower frequency bias power and higher frequency power. Three or more frequencies can be used in some deployments. In addition, some deployment methods may use something other than radio frequency, such as microwave, infrared or xenon rays. Furthermore, some or all of the various compensation deployment methods and methods disclosed herein may be combined to further reduce the risk of charging damage. ▲ The invention is disclosed herein as being described by way of specific embodiments and deployments. Variations and modifications may be apparent to those skilled in the art without departing from the scope of the invention as set forth in the appended claims. The figure shows a simple one) The double inlay of the etching process is a one-piece molding (all_in_ embedded stacking. ^ Figure A is drawn (4) unfilled (four), which is a process that is normalized to the conductance of the electric cavity. Figure 2 is a diagram showing the process of compensating the derivative-to-steady state process, and the drawing of the figure C as the electrification cavity of the electrical component - which can rise and fall with uncompensated Conversion change Fig. 2D line drawing shows a process that can be compensated. The rise and fall conversion changes. Figure 2E is a line diagram showing the timing of a chemical composition with a picture compensation π m process. 21 1376785 3 The figure is a table showing the results of charging damage caused by plasma before and after compensation for single and multiple step processes. Figure 4A is a graphical image showing a concept for compensation and uncompensated processes The risk of charging damage is a function of the power supply to the bias power ratio.

Figure 4B is a graphical image showing a concept of charge damage risk as a function of power supply to bias power ratio, showing the effects of lower pressure and higher pressure. [Main component symbol description] 100 dual mosaic stack 1 1 0 barrier layer 120 dielectric substance #2 130 dielectric substance #1 140 hard mask film

150 etched hard masking film and photoresist multiple layers 1 80 0 hole low layer metal 1 8 5 hole 1 9 5 groove 2 1 0 C section of a line 2 1 5 C line of a section 2 2 0 D line A section of a section of the 225 D line drawn 22

Claims (1)

1376785 Patent Application Range: A method for suppressing a plasma processing chamber during a process transition from a first-plasma process step to a second plasma process step frequency And a method of charging damage, wherein the process conversion comprises changing at least one process parameter to change a plasma condition between the first and second plasma process steps, the method comprising the steps of: After the start of the process step, 'perform a conversion of at least one other process parameter before Compensation' to suppress charging damage caused by changes in plasma conditions during the process transition. 2. The method of claim 1, wherein the step of performing the pre-conversion compensation comprises: adding a cavity pressure prior to the process transition. 3. The method of claim 2, further comprising the step of: reducing the pressure of the cavity for the process after the process is switched. 4. The method of claim 2, wherein the step of performing the pre-conversion compensation comprises: if a power-to-bias power ratio is greater than about 1', adding a cavity pressure prior to the process transition. 5. The method of claim 1, wherein the first and second plasma processes are plasma etching processes, and wherein the step of performing the pre-conversion compensation comprises: by introducing before the process conversion An inert gas is used to change the gas chemistry in the chamber, and wherein the method further comprises the following steps. After the process is switched, the inert gas is replaced by a reactive gas. 6. The method of claim 5, wherein the process is converted 23 1376785 The inactive fluorine is introduced to the plasma processing chamber and is introduced into the chamber at a point before the process transition, which causes the process to transfer the inert gas from the gas control panel to the process. 7. The method of claim 6, wherein the step of introducing gas into the plasma processing chamber comprises introducing argon gas 2 seconds before the change. 8. The method of claim 5, compensation The step includes: if a power supply is about 1, the cavity is changed in the cavity before the process is switched: an inactive gas. 9. The method of claim 1, wherein the step of compensating comprises setting a ratio of less than about 1 for the conversion. 1 0. The method of claim 1, wherein the step of compensating comprises: before the process conversion. 11. The method of claim method according to claim 10 includes: setting before the process conversion 1 00W. 12. A method for inhibiting one of the work processes in a plasma processing chamber from a process step to another process step, the method comprising the steps of: the step of: the active gas flow to The interval of the replacement is greater than the retention time of the process cavity, wherein the inactive is introduced: at least the process in which the bias power ratio is greater than the gas chemistry before the conversion is performed, wherein the source power is biased before the conversion is performed The power in which the first bias power is before the conversion is performed. Initiating the biasing power to the biasing power to approximately one of the process transitions during the charging of the component to a predetermined smoothing line 24 1376785. The characteristic conversion changes at least one process parameter to suppress charging damage occurring in the process conversion period. 13. The method of claim 12, wherein the step of changing the at least one cake parameter by the predetermined smooth nonlinear transformation comprises: (a) a Boltzmann curve or a One is to change the at least one process parameter. 14. The method of claim 12, wherein the step of changing the at least one process parameter comprises: gradually changing from the first stable state to a transition state and gradually changing from the transition state to the second stable state. The method of claim 12, wherein the step of changing the at least one selection parameter by the predetermined smooth nonlinear transformation comprises: changing at least one of the following items: (a) 〆 plasma power; (b) a bias power; (c) a gas flow; (d) ~ cavity pressure; or (^) a magnetic field strength. 16. The method of claim 12, wherein a power source is used The rate versus bias power ratio is greater than about 1, and the predetermined smooth nonlinear transition changes at least one process parameter. During the process conversion process, the method of controlling the electrical damage of a process step from one process step to another is used to suppress the damage of a working part in a plasma processing chamber, and the method comprises the following steps: a) Monitoring the impedance of the plasma in a steady state; b) monitoring the impedance of the electrode during a process transition and c) limiting the change in the impedance of the plasma 兮Κβ > during the process transition, The charging damage on the working part is suppressed by 25 ^/6785. 18. The method of claim 17, wherein the step of limiting the impedance during the process transition includes compensating for at least one process parameter. 19. The method of claim 17, further comprising the step of: limiting the change in plasma impedance during the process transition to less than about 2 times the impedance value during the steady state. The method of claim 17, further comprising the step of: limiting the change in impedance of the plasma during the process transition to less than about 1.5 times the value of the impedance in the steady state. 1. The method of claim 17, further comprising the steps of: a) limiting the increase in plasma impedance during the process transition to less than about 2 times the plasma impedance value during the steady state And b) limiting the plasma impedance reduction during the process transition to less than about 1.5 times the plasma impedance value in the steady state. 22. The method of claim 1, wherein the method comprises the steps of: comparing the plasma impedance in a steady state with the plasma impedance in the process transition and based on the steady state of the plasma impedance before the conversion. The value limits the value of the plasma impedance during this conversion. 26 1376785 VII. Designated representative map: (1) The representative representative of the case is: Figure 2. (2) The representative symbol of the representative figure is a simple description: a section of the 210 C line: a section of the 215 C line 22 0 - a section of the D line ... 225 D section of the line 8. If there is a chemical formula in this case, please disclose the chemical formula that best shows the characteristics of the invention: