1376704 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種高絕緣高電壓電阻及其製造方法， 特別是關於一種結合陶瓷管之高絕緣高電壓電阻及其製造 方法。 【先前技術】 電阻等被動元件在工業之發展中是必要且不可或缺的 元件，而隨著工業化的進步，有時電阻可能會被用在高電 壓之環境中例如5k伏特之環境，甚至於是超過69k伏特之 超高電壓之環境下。在此情況下，一般之電阻會無法負荷 而造成損壞。因此需要一種可以承受高電壓環境之電阻元 件。 在先前技術中，已經揭露一種結合交聯聚乙烯 (Cross-line PE，XLPE)或是模造式矽橡膠絕緣之電阻， 以用於高電壓之環境下。但交聯聚乙烯之製程變異性太 大，且在高電壓之環境下電阻本體會產生高溫，如絕緣材 料的散熱不良將會縮減電阻之使用期限。若是使用模造式 矽橡膠之電阻，針對不同絕緣等級需要用不同之矽橡膠模 具製成不同的模造式矽橡膠電阻，此模具將會造成製造成 本提高。除了上述的缺失外，結合交聯聚乙烯或是模造式 矽橡膠等材料對於溶劑之適應性不佳，尤其是對於汽油等 高揮發性的溶劑會很容易滲入穿透。當電阻放置於溶劑中 1376704 端蓋13a及13b相接。金屬導線14a及金屬導線14b可為 銅線或是銅包鋼線，但本發明並不以此為限。藉由金屬導 線14a、14b、端蓋13a、13b及導電部12彼此電性連接以 形成通過電阻主體10之負載電流通路。由於電阻主體1〇 之製程係與現有製造電阻之技術相似，故在此不再贅述。1376704 VI. Description of the Invention: [Technical Field] The present invention relates to a high-insulation high-voltage resistor and a method of manufacturing the same, and more particularly to a high-insulation high-voltage resistor combined with a ceramic tube and a method of manufacturing the same. [Prior Art] Passive components such as resistors are necessary and indispensable components in the development of the industry, and with the advancement of industrialization, sometimes the resistors may be used in a high voltage environment such as a 5 kV environment, or even Exceeding the high voltage of 69k volts. In this case, the general resistance will not be able to load and cause damage. Therefore, there is a need for a resistor element that can withstand high voltage environments. In the prior art, a resistor incorporating a cross-line PE (XLPE) or a molded ruthenium rubber insulation has been disclosed for use in a high voltage environment. However, the process variation of the cross-linked polyethylene is too large, and the high-voltage environment generates a high temperature in the resistor body. If the heat dissipation of the insulating material is poor, the life of the resistor is reduced. If a molded 矽 rubber resistor is used, it is necessary to make different molded 矽 rubber resistors for different insulation grades with different 矽 rubber molds, which will result in a manufacturing cost increase. In addition to the above-mentioned defects, materials such as cross-linked polyethylene or molded ruthenium rubber have poor adaptability to solvents, especially for highly volatile solvents such as gasoline. When the resistor is placed in the solvent, 1376704 end caps 13a and 13b are connected. The metal wire 14a and the metal wire 14b may be copper wire or copper clad steel wire, but the invention is not limited thereto. The metal wires 14a, 14b, the end caps 13a, 13b, and the conductive portion 12 are electrically connected to each other to form a load current path through the resistor body 10. Since the process of the resistor body 1 is similar to the existing technology for manufacturing resistors, it will not be described herein.
陶兗管20係用以包覆電阻主體10,並根據所需承受之 電壓没疋不同之厚度t及外徑圓周長^。較佳者’陶曼管 20之表H過上釉處理’以增加亮度、耐候性及絕緣性， 進^ P方止外4之〜由等高揮發性之溶劑渗入高絕 電厂以提供防護效果。電阻主體Π)與陶究管2〇之間可 包括-料⑽層3〇, Μ有贿之 放入陶瓷管20後，第—密㈣命哲田电1遐10 ^ 9Π 在封鳊21與第二密封端22係分別 ^ B 兩端，覆蓋於電阻主體ι〇之端蓋13 及一密封電阻主體I第-密封…第密二 22之材質可為矽樹脂，伸 /、第一在封端 端21與第二密封端22 以此為限。第一密封 有防護效果。2之表面㈣時_上轴處理’以具 "月 圖3係本發明之高絕緣高壓電阻所jl# 之熱阻係數之等效電路圖。 阻所具有 在本實施例中，高絕緣高壓電阻^所具有的熱電阻係 數RT之等效電路圖即如圖3所示。其中幻係代表端蓋 13a、13b所具有之熱阻係數，们係代表導電部12所具有 之熱阻係數’ R3係代表磁棒u所具有之熱阻係數 代表陶究管20,包括第一密封端21與第二密封端22所具 7 1376704 有之熱阻係數。由圖3之等效電路可知，高絕緣高壓電阻 1所具有的熱電阻係數為尽 R2^3+(2R,+R4)(r2+^ 〇 而得到高絕緣高壓電阻i之發熱 △T=PxRT，其中P為高絕緣高壓電阻 之”為 本發明之S絕緣高壓電阻丨會 ’、。由此可知， ^ n會々有較小的發熱量。因此在 境下’本發明之高絕緣高壓電阻1可維持較長 對照ί著請參考圖4係本發明之陶竞管規格與所適電壓之The ceramic tube 20 is used to cover the resistor body 10, and has a different thickness t and an outer circumference circumference according to the voltage to be withstood. The preferred 'Taman tube 20 table H glazed treatment' to increase brightness, weather resistance and insulation, into the outside of the 4 ~ ~ by the high volatile solvent into the high power plant to provide protection effect. Between the resistor body Π) and the pottery tube 2〇, the material (10) layer 3〇 can be included, and the bribe is placed in the ceramic tube 20, and the first-fourth (four) 命哲田电1遐10^9Π in the seal 21 The second sealing end 22 is respectively connected to the end of the resistor body ι, and a sealing resistor body I. The first sealing material of the second sealing member 22 can be made of enamel resin, stretched, and first sealed. The end end 21 and the second sealing end 22 are limited thereto. The first seal has a protective effect. The surface (4) of the surface (4) is processed by the upper axis. The equivalent circuit diagram of the thermal resistance coefficient of the high-insulation high-voltage resistor jl# of the present invention is shown in Fig. 3. In the present embodiment, the equivalent circuit diagram of the RTD RT of the high-insulation high-voltage resistor is shown in Fig. 3. The phantom represents the thermal resistance coefficient of the end caps 13a, 13b, which represent the thermal resistance coefficient of the conductive portion 12, and the R3 represents that the thermal resistance coefficient of the magnetic bar u represents the ceramic tube 20, including the first The sealed end 21 and the second sealed end 22 have a thermal resistance coefficient of 7 1376704. It can be seen from the equivalent circuit of FIG. 3 that the high-insulation high-voltage resistor 1 has a thermal resistance coefficient of R2^3+(2R, +R4) (r2+^ 〇 and a high-insulation high-voltage resistance i is generated by ΔT=PxRT, Where P is a high-insulation high-voltage resistor "is the S-insulated high-voltage resistor of the present invention". It can be seen that ^ n will have a small heat generation. Therefore, the present invention has a high-insulation high-voltage resistor 1 Can maintain a long comparison, please refer to Figure 4 is the Tao competition tube specifications and the appropriate voltage
本發明不同之陶衫2G可以承受之電 A 南絕緣面壓電阻1所要承受之電壓越大時，陶竟其20P之】 度t及外縣㈣必_長。而 =20之厚 係將電壓大小分為五個等級， ^方式中， 此由圖4中可知，當電壓月並不以此為限。因 伏特幻5k伏特之間時， =，备介於处 徑圓周長0為18公厘；當電墨广度（為5公厘，外 間時’陶瓷管20之厚度t為8;1八；5k伏特至30k伏特之 公厘；當電壓介於30k伏特至t厘，外徑圓周長0為24 之厚度t為1〇公厘，外徑圓 伏特之間時，陶瓷管2〇 於5〇k伏特至7处伏特之間時0^28公厘；當電齡 公厘，外徑圓周長0為38公厘。兩定官2〇之厚度t為15 管20之規格僅為舉例，本發明並：：意的是，上述之陶瓷 接著請參考圖5係本發明 ^述之規格為限。 、”S緣焉壓電阻之製造方 1376704 法之步驟流程圖。此處需注意的是，以下雖以上述之高絕 緣高壓電阻1為例說明本發明之高絕緣高壓電阻之製造方 法，但本發明之高絕緣高壓電阻之製造方法並不以使用在 上述之高絕緣高壓電阻1為限。 首先進行步驟501 :提供一電阻主體，該電阻主體包括 一磁棒及二端蓋，二端蓋分別位於該磁棒之兩端。 首先要先提供電阻主體10。本發明係先利用磁棒U 及端蓋13a、端蓋13b ’將磁棒u之兩端分別連接端蓋 及端蓋13b以製成電阻主體1〇。 在此步驟501中，進一步根據所需之一電阻值，以決 定是利用繞線製成或皮膜製成一導電部12包覆磁棒u。 當高絕緣高壓電阻1所需之電阻值小於谢歐姆時，導電 部12係利用繞線製成，而當所需之電阻值介於5〇k歐姆至 10G歐姆時’導電部12係利用皮膜製成。在本實施例中， 導電部12係以皮膜製成為例進行說明。 其次進行步驟5〇2 ·提供二金屬導線，將各該金屬導線 之一端分別電性連接各該端蓋。 在本步驟5〇2中將金屬導線與⑷分別電性連接 端蓋13aA 13b，如此一來’電阻主體1〇即可透過金屬導 線1扣與14b電性連接至其他的電子元件（圖未示）。 接著進行步驟5G3:根據所需承受之—電壓值以提供一 陶瓷管，將該陶究管之表面進行上釉處理。 接著根擄高絕緣高壓電阻i會承受之電壓環境，以提 供不同厚度t及外徑圓周長0之陶竞管2()，其中電壓越高， 1376704 其陶瓷管20之厚度t及外徑圓周長4皆越長。陶瓷管20 選擇之標準可參考圖4。接著將陶瓷管20之表面進行上釉 處理，以達到防護之效果。 再進行步驟504:將該電阻主體包覆於該陶瓷管内，並 提供一矽樹脂層以密封該電阻主體及該陶瓷管。 在本步驟504中，將電阻主體10放置入於陶瓷管20 内。接著再利用矽樹脂層30密封電阻主體10與陶瓷管20。 亦可在製成電阻主體10後，先行將矽樹脂層30包覆於電 阻主體10上，本發明並不以此為限。 接著進行步驟505:提供一第一密封端及一第二密封 端，以分別設置於該陶瓷管之兩端以密封該電阻主體。 再提供第一密封端21及第二密封端22，第一密封端 21及第二密封端22可由矽樹脂之材質製成，但本發明並 不以此為限。接著將第一密封端21及第二密封端22設置 於陶瓷管20之兩端，以覆蓋電阻主體10之端蓋13a及端 蓋13b。如此一來，即可將電阻主體10完全密封。 接著進行步驟506:將該第一密封端及該第二密封端之 表面進行上釉處理。 接著將第一密封端21及第二密封端22進行上釉處 理。如此一來，即可製造出高絕緣高壓電阻1，並且藉由 陶瓷管20、第一密封端21及第二密封端22之保護，使得 高絕緣高壓電阻1在溶劑中仍可正常作用。 最後進行步驟507 :測量高絕緣高壓電阻之電阻值。 最後再測量高絕緣高壓電阻1之電阻值，以確定是否 1376704 符合所需之電阻值。 此處需注意的是，本發明之高絕緣高壓電阻之製造方 法並不以上述之步驟次序為限，只要能達成本發明之目 的，上述之步驟次序亦可加以改變。 經由上述之製造方法，所製造出的高絕緣高壓電阻1 可用於5k伏特到75k伏特之高電壓環境中，且具有較高的 可靠度，成本較低廉。並且與先前技術之電阻比較，本發 明之高絕緣高壓電阻1在溶劑中的適應性為結合交聯聚乙 烯之電阻的3倍，為模造矽橡膠之電阻之4.5倍，也具有 高絕緣之效果。由此可知，本發明之高絕緣高壓電阻1明 顯優於先前技術之電阻。 綜上所陳，本發明無論就目的、手段及功效，在在均 顯示其迥異於習知技術之特徵，懇請貴審查委員明察， 早曰賜准專利，俾嘉惠社會，實感德便。惟應注意的是， 上述諸多實施例僅係為了便於說明而舉例而已，本發明所 主張之權利範圍自應以申請專利範圍所述為準，而非僅限 於上述實施例。 【圖式簡單說明】 圖1係本發明之高絕緣高壓電阻之外觀示意圖。 圖2係依據圖1之高絕緣高壓電阻之剖面圖。 圖3係本發明之高絕緣高壓電阻所具有之熱阻係數之等效 電路圖。 圖4係本發明之陶瓷管規格與所適電壓之對照表。 1376704 圖5係本發明之高絕緣高壓電阻之製造方法之步驟流程圖。 【主要元件符號說明】 高絕緣高壓電阻1 電阻主體10 磁棒11 導電部12 端蓋 13a、13b 金屬導線14a、14b 陶瓷管20 第一密封端21 第二密封端22 矽樹脂層30 厚度t 外徑圓周長0 熱阻係數Rl、R2、R3、R4The different ceramic shirts of the present invention can withstand the power of A. The insulation voltage of the south insulator is greater than the voltage to be withstood, and the ceramics are 20P and the outer county (four) must be long. The thickness of =20 divides the voltage into five levels. In the ^ mode, it can be seen from Figure 4 that the voltage month is not limited to this. Between the volts and the 5k volts, =, the circumference is 0 to 18 mm; when the ink width is 5 mm, the thickness of the ceramic tube 20 is 8; 18; 5k Volt to 30k volts of metric; when the voltage is between 30k volts and t PCT, the outer diameter of the outer circumference is 0, the thickness t is 24 〇, and the outer diameter is between volts, the ceramic tube 2 〇5〇k 0 to 28 mm between volts and 7 volts; when the electrical age is mm, the outer diameter of the outer circumference is 0 to 38 mm. The thickness t of the two constants is 15 and the specification of the tube 20 is only an example, the present invention And:: It is intended that the above-mentioned ceramics, please refer to FIG. 5, which is a specification of the method of the present invention. The flow chart of the method of the manufacturing method of the S-edge rolling resistor 1376704. Here, it should be noted that the following Although the method for manufacturing the high-insulation high-voltage resistor of the present invention is described by taking the above-described high-insulation high-voltage resistor 1 as an example, the method for manufacturing the high-insulation high-voltage resistor of the present invention is not limited to the high-insulation high-voltage resistor 1 described above. Step 501: providing a resistor body, the resistor body includes a magnetic bar and a two-end cover, wherein the two end caps are respectively located on the magnetic Firstly, the resistor body 10 is first provided. In the present invention, the magnetic rod U and the end cover 13a and the end cover 13b' are respectively used to connect the two ends of the magnetic rod u to the end cover and the end cover 13b respectively to form the resistor body 1. In this step 501, according to one of the required resistance values, it is determined that the magnetic rod u is covered by a conductive portion 12 made of a wire or a film. The resistance value required for the high insulation high voltage resistor 1 When it is less than Xie ohm, the conductive portion 12 is made by winding, and when the required resistance value is between 5 〇 k ohm and 10 G ohm, the conductive portion 12 is made of a film. In this embodiment, the conductive portion The 12 series is made by taking the film as an example. Next, step 5〇2 is provided. Two metal wires are provided, and one end of each of the metal wires is electrically connected to each of the end caps respectively. In this step 5〇2, the metal wires are connected with (4) The end caps 13aA 13b are electrically connected respectively, so that the resistor body 1 can be electrically connected to the other electronic components (not shown) through the metal wires 1 and 14b. Then proceed to step 5G3: according to the required - voltage value to provide a ceramic tube The surface is glazed. Then the high-voltage high-voltage resistor i will withstand the voltage environment to provide different thickness t and outer diameter of the circumference of the ceramic tube 2 (), the higher the voltage, 1376704 its ceramic tube 20 The thickness t and the outer diameter of the circumferential length 4 are longer. The standard for selecting the ceramic tube 20 can be referred to Fig. 4. Then, the surface of the ceramic tube 20 is glazed to achieve the protective effect. Then, step 504 is performed: Covering the ceramic tube and providing a resin layer to seal the resistor body and the ceramic tube. In this step 504, the resistor body 10 is placed in the ceramic tube 20. Then the resin layer 30 is used to seal the resistor. The main body 10 and the ceramic tube 20. The resin layer 30 may be coated on the resistor body 10 after the resistor body 10 is formed. The invention is not limited thereto. Next, proceeding to step 505, a first sealing end and a second sealing end are provided to be respectively disposed at both ends of the ceramic tube to seal the resistor body. Further, the first sealing end 21 and the second sealing end 22 are provided. The first sealing end 21 and the second sealing end 22 can be made of a material of a resin, but the invention is not limited thereto. Next, the first sealing end 21 and the second sealing end 22 are disposed at both ends of the ceramic tube 20 to cover the end cap 13a and the end cap 13b of the resistor body 10. In this way, the resistor body 10 can be completely sealed. Next, step 506 is performed: the surfaces of the first sealed end and the second sealed end are subjected to glazing treatment. The first sealed end 21 and the second sealed end 22 are then subjected to glazing treatment. In this way, the high-insulation high-voltage resistor 1 can be manufactured, and the high-insulation high-voltage resistor 1 can still function normally in the solvent by the protection of the ceramic tube 20, the first sealed end 21, and the second sealed end 22. Finally, step 507 is performed: measuring the resistance value of the high insulation high voltage resistor. Finally, measure the resistance of the high-insulation high-voltage resistor 1 to determine if 1376704 meets the required resistance value. It should be noted here that the manufacturing method of the high-insulation high-voltage resistor of the present invention is not limited to the above-described order of steps, and the order of the above steps may be changed as long as the object of the present invention can be attained. Through the above manufacturing method, the manufactured high-insulation high-voltage resistor 1 can be used in a high-voltage environment of 5k volts to 75k volts, and has high reliability and low cost. Moreover, compared with the resistance of the prior art, the high-insulation high-voltage resistor 1 of the present invention has an adaptability in a solvent of three times that of the combined cross-linked polyethylene, 4.5 times the resistance of the molded ruthenium rubber, and also has a high insulating effect. . From this, it is understood that the high-insulation high-voltage resistor 1 of the present invention is clearly superior to the prior art resistor. To sum up, the present invention, regardless of its purpose, means and efficacy, shows its distinctive features of the prior art. You are requested to review the examinations and grant the patents as soon as possible. It is to be noted that the various embodiments described above are intended to be illustrative only, and the scope of the invention is intended to be limited by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing the appearance of a high-insulation high-voltage resistor of the present invention. Figure 2 is a cross-sectional view of the high-insulation high-voltage resistor according to Figure 1. Fig. 3 is an equivalent circuit diagram showing the thermal resistance coefficient of the high-insulation high-voltage resistor of the present invention. Figure 4 is a comparison table of the specifications of the ceramic tube of the present invention and the appropriate voltage. 1376704 FIG. 5 is a flow chart showing the steps of a method for manufacturing a high-insulation high-voltage resistor of the present invention. [Main component symbol description] High-insulation high-voltage resistor 1 Resistor body 10 Magnetic bar 11 Conductive portion 12 End caps 13a, 13b Metal wires 14a, 14b Ceramic tube 20 First sealed end 21 Second sealed end 22 Silicone resin layer 30 Thickness t Diameter of the circumference of the circle 0 thermal resistance coefficient Rl, R2, R3, R4