TWI368979B - Fabrication method of through-silicon vias - Google Patents

Fabrication method of through-silicon vias

Info

Publication number
TWI368979B
TWI368979B TW097135496A TW97135496A TWI368979B TW I368979 B TWI368979 B TW I368979B TW 097135496 A TW097135496 A TW 097135496A TW 97135496 A TW97135496 A TW 97135496A TW I368979 B TWI368979 B TW I368979B
Authority
TW
Taiwan
Prior art keywords
fabrication method
silicon vias
vias
silicon
fabrication
Prior art date
Application number
TW097135496A
Other languages
Chinese (zh)
Other versions
TW201013879A (en
Inventor
Tai Yuan Huang
Chih Hsing Chen
Original Assignee
Advanced Semiconductor Eng
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Semiconductor Eng filed Critical Advanced Semiconductor Eng
Priority to TW097135496A priority Critical patent/TWI368979B/en
Publication of TW201013879A publication Critical patent/TW201013879A/en
Application granted granted Critical
Publication of TWI368979B publication Critical patent/TWI368979B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
TW097135496A 2008-09-16 2008-09-16 Fabrication method of through-silicon vias TWI368979B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW097135496A TWI368979B (en) 2008-09-16 2008-09-16 Fabrication method of through-silicon vias

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW097135496A TWI368979B (en) 2008-09-16 2008-09-16 Fabrication method of through-silicon vias

Publications (2)

Publication Number Publication Date
TW201013879A TW201013879A (en) 2010-04-01
TWI368979B true TWI368979B (en) 2012-07-21

Family

ID=44829489

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097135496A TWI368979B (en) 2008-09-16 2008-09-16 Fabrication method of through-silicon vias

Country Status (1)

Country Link
TW (1) TWI368979B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI677057B (en) * 2017-01-31 2019-11-11 美商格羅方德半導體公司 Methods of forming integrated circuit structure for joining wafers and resulting structure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI677057B (en) * 2017-01-31 2019-11-11 美商格羅方德半導體公司 Methods of forming integrated circuit structure for joining wafers and resulting structure

Also Published As

Publication number Publication date
TW201013879A (en) 2010-04-01

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