TWI368293B - Method for fabricating a deep trench in a substrate - Google Patents

Method for fabricating a deep trench in a substrate

Info

Publication number
TWI368293B
TWI368293B TW096144097A TW96144097A TWI368293B TW I368293 B TWI368293 B TW I368293B TW 096144097 A TW096144097 A TW 096144097A TW 96144097 A TW96144097 A TW 96144097A TW I368293 B TWI368293 B TW I368293B
Authority
TW
Taiwan
Prior art keywords
fabricating
substrate
deep trench
trench
deep
Prior art date
Application number
TW096144097A
Other languages
English (en)
Other versions
TW200924108A (en
Inventor
Chung Yen Chou
Hai Han Hung
Teng Wang Huang
Shin Yu Nieh
Original Assignee
Nanya Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanya Technology Corp filed Critical Nanya Technology Corp
Priority to TW096144097A priority Critical patent/TWI368293B/zh
Priority to US12/035,443 priority patent/US7666792B2/en
Publication of TW200924108A publication Critical patent/TW200924108A/zh
Application granted granted Critical
Publication of TWI368293B publication Critical patent/TWI368293B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3083Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/3086Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/66181Conductor-insulator-semiconductor capacitors, e.g. trench capacitors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices
    • H10B12/01Manufacture or treatment
    • H10B12/02Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03Making the capacitor or connections thereto
    • H10B12/038Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H10B12/0387Making the trench

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Semiconductor Memories (AREA)
TW096144097A 2007-11-21 2007-11-21 Method for fabricating a deep trench in a substrate TWI368293B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW096144097A TWI368293B (en) 2007-11-21 2007-11-21 Method for fabricating a deep trench in a substrate
US12/035,443 US7666792B2 (en) 2007-11-21 2008-02-22 Method for fabricating a deep trench in a substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW096144097A TWI368293B (en) 2007-11-21 2007-11-21 Method for fabricating a deep trench in a substrate

Publications (2)

Publication Number Publication Date
TW200924108A TW200924108A (en) 2009-06-01
TWI368293B true TWI368293B (en) 2012-07-11

Family

ID=40642426

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096144097A TWI368293B (en) 2007-11-21 2007-11-21 Method for fabricating a deep trench in a substrate

Country Status (2)

Country Link
US (1) US7666792B2 (zh)
TW (1) TWI368293B (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8860183B2 (en) 2009-06-10 2014-10-14 Seoul Viosys Co., Ltd. Semiconductor substrate, semiconductor device, and manufacturing methods thereof
US8481411B2 (en) * 2009-06-10 2013-07-09 Seoul Opto Device Co., Ltd. Method of manufacturing a semiconductor substrate having a cavity
JP5847083B2 (ja) 2009-08-26 2016-01-20 ソウル バイオシス カンパニー リミテッドSeoul Viosys Co.,Ltd. 発光素子の製造方法
JP5570838B2 (ja) * 2010-02-10 2014-08-13 ソウル バイオシス カンパニー リミテッド 半導体基板、その製造方法、半導体デバイス及びその製造方法
CN117293156B (zh) * 2023-11-27 2024-02-20 合肥晶合集成电路股份有限公司 深沟槽的制备方法及图像传感器

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6544855B1 (en) * 2001-10-19 2003-04-08 Infineon Technologies Ag Process flow for sacrificial collar with polysilicon void

Also Published As

Publication number Publication date
US20090130853A1 (en) 2009-05-21
TW200924108A (en) 2009-06-01
US7666792B2 (en) 2010-02-23

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