TWI368278B - Semiconductor device having recess gate - Google Patents

Semiconductor device having recess gate

Info

Publication number
TWI368278B
TWI368278B TW095149448A TW95149448A TWI368278B TW I368278 B TWI368278 B TW I368278B TW 095149448 A TW095149448 A TW 095149448A TW 95149448 A TW95149448 A TW 95149448A TW I368278 B TWI368278 B TW I368278B
Authority
TW
Taiwan
Prior art keywords
semiconductor device
recess gate
recess
gate
semiconductor
Prior art date
Application number
TW095149448A
Other languages
Chinese (zh)
Other versions
TW200802620A (en
Inventor
Young-Kyun Jung
Original Assignee
Hynix Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hynix Semiconductor Inc filed Critical Hynix Semiconductor Inc
Publication of TW200802620A publication Critical patent/TW200802620A/en
Application granted granted Critical
Publication of TWI368278B publication Critical patent/TWI368278B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42356—Disposition, e.g. buried gate electrode
    • H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66613—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation
    • H01L29/66621—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation using etching to form a recess at the gate location
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66613—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation
    • H01L29/66628—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation recessing the gate by forming single crystalline semiconductor material at the source or drain location

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
TW095149448A 2006-06-30 2006-12-28 Semiconductor device having recess gate TWI368278B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20060060292 2006-06-30
KR1020060124735A KR100780620B1 (en) 2006-06-30 2006-12-08 Semiconductor device with recess gate and method for fabricating the same

Publications (2)

Publication Number Publication Date
TW200802620A TW200802620A (en) 2008-01-01
TWI368278B true TWI368278B (en) 2012-07-11

Family

ID=39011590

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095149448A TWI368278B (en) 2006-06-30 2006-12-28 Semiconductor device having recess gate

Country Status (3)

Country Link
KR (1) KR100780620B1 (en)
CN (1) CN101097957B (en)
TW (1) TWI368278B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101036927B1 (en) 2008-12-31 2011-05-25 주식회사 하이닉스반도체 Semiconductor device with vertical gate and method for manufacturing the same
US9064699B2 (en) * 2013-09-30 2015-06-23 Samsung Electronics Co., Ltd. Methods of forming semiconductor patterns including reduced dislocation defects and devices formed using such methods

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990000763A (en) * 1997-06-10 1999-01-15 문정환 Manufacturing Method of Semiconductor Device
US6677205B2 (en) * 2001-09-28 2004-01-13 Infineon Technologies Ag Integrated spacer for gate/source/drain isolation in a vertical array structure
KR20050119244A (en) * 2004-06-16 2005-12-21 주식회사 하이닉스반도체 Method for forming gate of semiconductor device
KR100574497B1 (en) * 2004-12-24 2006-04-27 주식회사 하이닉스반도체 Asysmmetry recess channel mosfet and method for manufacturing thereof

Also Published As

Publication number Publication date
CN101097957A (en) 2008-01-02
CN101097957B (en) 2010-10-06
KR100780620B1 (en) 2007-11-30
TW200802620A (en) 2008-01-01

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees