TWI367399B - - Google Patents

Info

Publication number
TWI367399B
TWI367399B TW092134801A TW92134801A TWI367399B TW I367399 B TWI367399 B TW I367399B TW 092134801 A TW092134801 A TW 092134801A TW 92134801 A TW92134801 A TW 92134801A TW I367399 B TWI367399 B TW I367399B
Authority
TW
Taiwan
Application number
TW092134801A
Other languages
Chinese (zh)
Other versions
TW200416498A (en
Inventor
Shigeru Hirukawa
Kobayashi Naoyuki
Owa Soichi
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of TW200416498A publication Critical patent/TW200416498A/zh
Application granted granted Critical
Publication of TWI367399B publication Critical patent/TWI367399B/zh

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70341Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70991Connection with other apparatus, e.g. multiple exposure stations, particular arrangement of exposure apparatus and pre-exposure and/or post-exposure apparatus; Shared apparatus, e.g. having shared radiation source, shared mask or workpiece stage, shared base-plate; Utilities, e.g. cable, pipe or wireless arrangements for data, power, fluids or vacuum

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW92134801A 2002-12-10 2003-12-10 Exposure method, exposure apparatus, and manufacturing method of device TW200416498A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002357959 2002-12-10
JP2003169903 2003-06-13
JP2003398923A JP4701606B2 (ja) 2002-12-10 2003-11-28 露光方法及び露光装置、デバイス製造方法

Publications (2)

Publication Number Publication Date
TW200416498A TW200416498A (en) 2004-09-01
TWI367399B true TWI367399B (ja) 2012-07-01

Family

ID=34198700

Family Applications (1)

Application Number Title Priority Date Filing Date
TW92134801A TW200416498A (en) 2002-12-10 2003-12-10 Exposure method, exposure apparatus, and manufacturing method of device

Country Status (2)

Country Link
JP (1) JP4701606B2 (ja)
TW (1) TW200416498A (ja)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101861493B1 (ko) * 2003-04-11 2018-05-28 가부시키가이샤 니콘 액침 리소그래피 머신에서 웨이퍼 교환동안 투영 렌즈 아래의 갭에서 액침 액체를 유지하는 장치 및 방법
US7589822B2 (en) * 2004-02-02 2009-09-15 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
US7751030B2 (en) 2005-02-01 2010-07-06 Asml Holding N.V. Interferometric lithographic projection apparatus
US8081295B2 (en) * 2005-03-15 2011-12-20 Carl Zeiss Smt Gmbh Projection exposure method and projection exposure system therefor
JPWO2007055237A1 (ja) * 2005-11-09 2009-04-30 株式会社ニコン 露光装置及び露光方法、並びにデバイス製造方法
US8934084B2 (en) * 2006-05-31 2015-01-13 Asml Holding N.V. System and method for printing interference patterns having a pitch in a lithography system
US8896809B2 (en) 2007-08-15 2014-11-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
NL1035920A1 (nl) * 2007-09-26 2009-03-30 Asml Netherlands Bv Lithographic System, Lithographic Apparatus and Device Manufacturing Method.
JP2009141263A (ja) * 2007-12-10 2009-06-25 Toshiba Corp 露光方法、フォトマスクおよびレチクルステージ
US20090174873A1 (en) * 2007-12-17 2009-07-09 Nikon Corporation Exposure apparatus, exposure method and device manufacturing method
JP2013145863A (ja) 2011-11-29 2013-07-25 Gigaphoton Inc 2光束干渉装置および2光束干渉露光システム
TWI792281B (zh) 2020-05-22 2023-02-11 台灣積體電路製造股份有限公司 半導體光刻技術及/或方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60186016A (ja) * 1984-03-05 1985-09-21 Nec Corp 半導体装置の製造方法
JPS6167225A (ja) * 1984-09-08 1986-04-07 Sony Corp パタ−ン形成方法
AU2747999A (en) * 1998-03-26 1999-10-18 Nikon Corporation Projection exposure method and system
JP2001237167A (ja) * 2000-02-23 2001-08-31 Nikon Corp 露光方法及びデバイス製造方法
JP2002164280A (ja) * 2000-09-14 2002-06-07 Sony Corp 露光方法
JP2002237167A (ja) * 2001-02-07 2002-08-23 Sony Corp 記録媒体カートリッジ

Also Published As

Publication number Publication date
JP2005026649A (ja) 2005-01-27
JP4701606B2 (ja) 2011-06-15
TW200416498A (en) 2004-09-01

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees