TWI360861B - Rfid tag and method of manufacturing the same tag - Google Patents

Rfid tag and method of manufacturing the same tag Download PDF

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TWI360861B
TWI360861B TW96129818A TW96129818A TWI360861B TW I360861 B TWI360861 B TW I360861B TW 96129818 A TW96129818 A TW 96129818A TW 96129818 A TW96129818 A TW 96129818A TW I360861 B TWI360861 B TW I360861B
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Taiwan
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radio frequency
frequency identification
hole
identification tag
antenna
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TW96129818A
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Chinese (zh)
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TW200908204A (en
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Takashi Yamagajo
Toru Maniwa
Manabu Kai
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Fujitsu Ltd
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第96129818號申請案 100年07月22日修正替換 九、發明說明: t發明所屬之技術領域】 技術領域 本發明係有關於一種射頻識別標藏及射頻識別標藏之 製造方法。本發明適合作為例如可貼在金屬上之對應金屬 之射頻識別標籤。 C先前枝術】 月景技術 眾所皆知’ RFID(射頻識別)系統係無線通信系統之 。一般而言’該系統包含有射頻識別(亦稱RFID標 籤)及項寫(RW)裝置,且藉由無線通信,即可由RW裝置對 射頻識別標籤進行資訊的讀寫。 在射頻識別標籤中,已知有藉由内建於射頻識別標籤 自體之電源動作的類型(稱作主動式標籤),及以來自rW裝 置之接收電波作為驅動電力動作的類型(稱作被動式標籤)。 在為使用被動式標籤之RFID系統時,射頻識別標籤係 以來自RW裝置之無線信號作為驅動電力,使内建之1(:或 LSI等積體電路動作,進行對應接收無線信號(控制信號)之 各種處理。利用前述接收無線信號之反射波,即可進行由 射頻識別標籤對RW裝置之發送。即,可將標籤山或前述各 種處理的結果等資訊載於該反射波上,進行對RW裝置之發 送。 此外,RFID系統中有利用到各種頻帶,而UHF頻帶 (860MHz〜960MHz)最近正備受矚目。UHF頻帶與既存之 第96129818號申請案 100年07月22日修正替換 13·56ΜΗζ頻帶或2.45GHz頻帶相比,可進行長距離通信》 在歐洲係使用868MHz,在美國係使用915MHz,而在日本 係使用953MHz附近的頻率。UHF帶之射頻識別標籤(以下 亦簡稱「標籤」)之通信距離係依照標籤内所用之IC晶片或 LSI等積體電路的性能而有所不同,大概在左右。又, RW裝置之輸出為1瓦特(w)左右。 習知射頻識別標籤有例如後述之專利文獻丨〜3所述者。 專利文獻1之技術的目的在於,即使在接近電波吸收體 使用RFID標籤時,也可抑制通信距離的降低,而可確保通 仏之可罪性。因此,專利文獻1中揭示了一種RFID標籤,該 RFID標籤包含有:具預定介電常數之長方體狀介電體構 件,該在介電體構件表面藉由蝕刻等形成為環形之收發用 天線圖形’及透過晶片接塾電性連接於該天線圖形之1(:晶 片。 根據該R™標籤,當將其使用在裝有液體之瓶子或人 體等具-定之導電常數的物體時,可在介電體構件周圍由 天線圖形來形成小型環形天線,在貼附對象内也可形成電 流環路,而可形成更大的電流環路,以提高環形天線之增 益’加長通信距離。 專利文獻2之技術係以製作出通信距離長,而且印字也 很谷易之RFID標籤為目的。因此,專利文獻2之標籤 係貼合料件與第2零件構成者,其中p零件包含有由 介電體構成之板狀第1基底;及覆蓋該第丨基底之表裡面中 之第1面的金制,而第2零件包含有:板狀第2基底;設於 1360861 ——__ 第96129818號申請案 ' | 100年07月22曰修正替拖 , 該第2基底上,且與前述第1零件之金屬層電性連接,而構 成通信天線之金屬圖形;連接於該金屬圖形,且可透過該 通信天線進行無線通信的電路晶片;及用以使該第2基底接 - 著於前述第1基底之表裡面中相對於前述第1面之第2面之 5 黏著材層’前述第1零件之金屬層與前述第2零件之金屬圖 形係由導通構件電性連接在一起。 專利文獻3之技術的目的在於提供一種rfid標籤,係 - 即使配設於含有金屬材料之機器内部時’也可抑制共振頻 .· 率或Q值的變化’而可確保良好的通信狀態者。因此,專利 10 文獻3中,係以設有環狀天線圖形及1C之大略圓板狀基板、 及具有與該基板大略相等之直徑的圓板狀磁板來構成標 - 籤’且藉由以1條直線切除該磁板周圍之一部份,即可簡單 地調整電感。 藉此’即使在機器内部配置有金屬構件等時,也可以 15磁板抑制影響,又’還可藉由設定切除部之寬度,使減少 _ 之金屬材料之天線電感與增加之磁半之電感互相抵銷,來 補償共振頻率或Q值的變化’而可確保良好的通信狀態。 專利文獻1 :特開2006-53833號公報 專利文獻2:特開2006-301690號公報 20 專利文獻3 :特開2006-331101號公報 【明内容J 發明揭示 發明所欲解決之問題 在將UHF頻帶用之射頻識別標籤貼在金屬上時,會有 7 第96129818號申請案 100年07月22日修正替換 與1C晶片或LSI等積體電路(以下簡稱晶片)之阻抗匹配或增 益變不佳’造成通信困難的情形。因此,如前述專利文獻 1〜3之技術,將射頻識別標籤之天線圖形作成環形而作了各 種嘗試,在具有環狀天線圖形之射頻識別標籤中,當晶片 之電納成分(為阻抗之倒數的導納虛部(通常以B表示))較大 時,就會不易調整阻抗匹配(以下亦簡稱「匹配調整」)❶ 即,由於搭載於射頻識別標藏之晶片的等效電路可用 並列之電容成分Cep、及並列之電阻成分Rcp表示,電納成 分B主要係依存電容成分Cep而變化,當該電容成分Ccp過 大時,就會不易設計、調整與其匹配之天線阻抗。 例如,如第13圖(比介電常數對Ccp特性)所示,其中— 個天線阻抗之調整方法係,藉由改變形成有天線圖形形成 之介電體(基板)的比介電常數(變小),即可增大天線圖形之 對應阻抗,而介電體之比介電常數也有其縮小的界限存在 (最小值為空氣之比介電常數=1),就會不易對應大於該界限 之對應電容成分Cep所需之晶片(第13圖_之£52)。 又,雖然藉由改變環狀天線圖形之環全長,也可進行 匹配調整,但縮短環全長時,會使增益下降。 本發明係有鑑於前述問題而發明出來者,且其目的之 一在於提供可抑制增益降低,並可輕易地進行與晶片之匹 配調整的射頻識別標籤。 此外,本發明並不限於前述目的,其另一目的在於可 發揮由實施後述發明之最佳形態所示之各結構導出之作用 效果,且為先前技術無法獲得之作用效果。 第96129818號申請案 | 100年07月22日修正替換 以解決問題之手段 為達成前述目的,本發明係使用以下所示之射頻識別 示藏及射頻識別標籤之製造方法。 (1) 即,本發明之射頻識別標籤包含有·晶片連接部, 係可連接晶片者;天線圖形,係呈環狀且電性連接於前述 晶片連接部者;及導通構件,係導通前述天線圖形之一部 份者。 (2) 此時,前述導通構件亦可分別設於以前述晶片連接 部為中心之對稱位置處。 (3) 又,前述天線圖形亦可設於介電體構件之表層面, 且則述導通構件係由穿通孔構成,且該穿通孔係通過前述 介電體構件之内部,將前述介電體構件之對向之各面上的 前述天線圖形互相導通者。 (4) 而且,前述天線圖形亦可設於介電體構件之表層 且月j述導通構件係由侧面導體構成,且該側面導體係 通過别述介電體構件之側面,將前述介電體構件之對向之 各面上的前述天線圖形互相導通者。 (5) 另外’前述穿通孔亦可設定成其直徑越大,則導體 部分之面積越小。 (6) 而且,別述穿通孔亦可僅内壁之一部份附加有導體 鑛層。 )發月之射頻識別標籤之製造方法包含有以下步 驟.形成電性連接於可連接晶片之晶片連接部的環狀天線 圖形,及形成導通前述天線圖形之一部份的導通構件。 1360861 第96129818號申請案 1〇〇年〇7月22日修正替換 (8)此時,亦可改變複數前述導通構件之間隔,藉此調 整與則述晶片之阻抗匹配。 發明效果 根據前述之本發明,藉由設置前述導通構件,則不需 5改變前述環狀天線圖形之物理性全長,即可使天線圖形之 阻抗變化’而可抑制增益降低,並可實現可輕易地進行與 所搭載之晶片之匹配調整的射頻識別標籤。 圖式簡單說明 第1圖係模式性地顯示本發明之第丨實施形態之射頻識 10別標籤之結構的立體圖。 第2圖係第1圖所示之射頻識別標籤之Α-Α截面圖。 $3圖係模式性地顯示第i圖及第2圖所示之射頻識別 標籤之模擬模型的立體圖。 第4圖係顯不第3圖所示之模擬模型之天線阻抗的史密 15 斯圖。 第5圖係顯不第3圖所示之模擬模型之天線阻抗的史密 斯圖。 第6圖係模式性地顯示縮短環形天線之環路長後之射 頻識別標籤之仿真模型的立體圖。 20 第7圖係顯不第6圖所示之模擬模型之天線阻抗的史密 斯圖。 第8圖係顯示將第3圖所示之射頻識別標籤之通孔設成 1道時之仿真模型的圖。 第9圖係顯示第8圖所示之模擬模型之天線阻抗的史密 10 1360861 96129818 號申 ϋ" . I 100年07月22日修正^植 斯圖。 ^ 第10圖係模式性地顯示本發明之第2實施形態之射頰 識別標籤之結構的立體圖。 第11圖係顯示第1 〇圖所示之射頻識別標簸之側面導體 5的位置改變時之對應電容成分(Cep)之變化的圖表。 第12圖係模式性地顯示本發明之第3實施形態之射頻 . 識別標籤之結構的立體圖。 .φ ·第13圖係顯不射頻識別標藏之基板(介電體)之比介電 禚數改變時之對應電容成分(Cep)之變化的圖表。 10【資施方式】 實施發明之最佳形態 以下參照圖式說明本發明之實施形態。唯,本發明當 不限疋於以下所示之實施形態’亦可在不脫離本發明之 意旨的範圍内作各種變形來實施。 [1 ]第1實施形態 • 帛1圖係模式性地顯示本發明之第1實施形態之射頻識 別標藏之結構的立體圖’而第2圖係第i圖所示之射頻識別 標籤之A-A截面圖。 2〇 > #該等第1圖及第2圖所示,本實施形態之射頻識別標 織包含有:基板(介電體構件)1;導體圖形之,係在除該基板 之長邊側之側面(-對對向之側面)外之各面之表層面上連 通形成者’也就是第2圖之戴面圖中之環形(方形)天線圖形 (以下亦稱環形天線)2;晶片連接部(供電點)3,係在構成環 攻線2長邊之基板丨面的中心附近與環形天線2電性連接 11 1360861 第96129818號申請案 1〇〇年〇7月22日修正替換 者,通孔(亦稱穿通孔)4,係作為導通構件,可在複數處(在 第1圖及第2圖中為2處)互相導通形成於基板丨表裡面之環 形天線2者;ic晶片或LSI等積體電路(晶片封裝體)5,係電 性連接於前述晶片連接部3者;外包樹脂ό,係包覆基板1全 5體者;接著層7 ’係設於外包樹脂6中欲安裴(貼)在金屬等上 之面者。此外,在第1圖中,省略了晶片封裝體5的圖式, 且省略了一部份外包樹脂6的圖式。 基板1係由具預定介電常數之介電體構成,例如,可由 聚四氟乙烯(PTFE)、聚苯醚(ΡΡΕ)等所期望之樹脂構成。 10 天線圖形2可藉由對銅或銀等金屬導體進行蝕刻或抗 钱處理等形成。又,如第1圖所示,為可確保所期望之增益, 可使天線圖形2在基板1之表面上具有對稱之圖形,且該對 稱之圖形係由供電點3越往長度方向,寬度就變得越大者。 通孔4可藉由在貫通基板1之孔的内壁中由導體鍍層等 15形成導電層來構成,在第i圖及第2圖所示之例巾係設於 以供電點3為中心之對稱位置處。藉此,如第2圖之截面圖 所示,即可藉由通孔4,將形成於導體圖形2之一部份,即 基板1之對向之各面(表面與裡面)的導體圖形2互相電性連 接(導通)’且包含有第丨環形圖形以,係以形成於基板丨之表 20層面(表裡面及側面)之導體圖形2為外周(長邊及短邊)者; 及第2環形圖形2b,係以形成於基板1之表層面(表裡面)的一 部份導體圖形2和通孔4為内周者,,藉由各環形圖形^、 2b,主要可產生2個電流環路。 此外,通孔4不一定要設在對稱位置處,而設在對稱位 12 1360861 * 第96129818號申請案_ 100年07月22日修正替換 置處可比較容易確保所需之增益。又,如後述,所設置之 通孔數亦可為1道(處)。即,只要可構成共有-部份環形圖 形2(2a)之第2環形圖形沘就夠了。 在如上述構成之本例之射頻識別標籤中,並未改變第! 5環形圖形2a之環長,而是藉由構成第2環形圖形2b來防止增 >降低,並可在史密斯圖上,使天線阻抗朝逆時針方向旋 轉(變化)’即’可增大天線圖形2之對應電容成分Ccp。又, #由改變通孔4間之距離(縮小),即可調整對應電容成分 • CCP(增大)。因此,可輕易地對具大電容電納成分之積體電 10路5(以下亦記為晶片5或標籤LSI5)進行阻抗匹配。 如第3圖所示,係將射頻識別標籤之外形尺寸設為長 69mmx寬35mmx厚5mm,且天線圖形2之厚度(導體厚)為 Ιίμηι,其導電率為5xl〇6s/m,將天線圖形2模型化,作為— 例,而對該天線圖形2設置通孔4時之天線阻抗的變化顯示 15 於第4圖之史密斯圖。 ^ 在該第4圖所示之史密斯圖中可知,0所表示之位置係 顯示在未設置通孔4時之950MHz之天線阻抗,丨所表示之位 置係顯示在設置通孔4時之天線阻抗,天線阻抗係朝逆時針 方向旋轉(變化),故可增大天線圖形2之對應電容成八 20 Ccp。因此,如第5圖所示,可進行與晶片5之阻抗的匹配二 且δ亥晶片5之阻抗係與在史密斯圖上1所表示之位署去二 複數的關係且電容成分大者。 又,如下述之第1表及第2表所示,可知不論是在將射 頻識別標藏貼在金屬上時及存在於自由空間上時之。 那—種 13 1360861 第96129818號申請案 1〇〇年〇7月22日修正替換 情形下,設有通孔4之增益及通信愍離的下降皆較少 [第1表] 增益比較 _____— 增益[dBi] 利用通孔匹配 將%長縮短時 ΐΐίΛ上時 1.93 1.11 〜---- 6 Λ Φ間 0.89 -2.95-- 無通孔 無變化 3.38 1.91 且環長 [第2表] 此外’第2表所示之通信距離(Γ)可藉由以下⑴式及(2) 式算出。 10 通信距離比輕 通信距離[m] 利用通孔匹配 將環長梅短時 無通孔,且環長 目i A全屬上時 1.873 1.695^*^-- 無變化 自由空間 1.276 0.755、^-- 0.179 ^___ 0.198 【數學式1】 fPt'Gt'Gr-q 4^ν ΤάΓ~~ ... (ι) ^RcRa ~\Ζ^^ - (2) λ :波長RELATED APPLICATIONS RELATED APPLICATIONS: TECHNICAL FIELD The present invention relates to a method of manufacturing a radio frequency identification tag and a radio frequency identification tag. The invention is suitable as a radio frequency identification tag for, for example, a corresponding metal that can be attached to a metal. C previous branching] Moonlight technology is well known. RFID (Radio Frequency Identification) system is a wireless communication system. Generally, the system includes radio frequency identification (also known as RFID tag) and item writing (RW) devices, and by wireless communication, information can be read and written by the RW device on the radio frequency identification tag. In the radio frequency identification tag, a type that is operated by a power source built in the RFID tag itself (referred to as an active tag), and a type in which a received wave from the rW device is used as a driving power action (referred to as passive type) is known. label). In the RFID system using the passive tag, the radio frequency identification tag uses the wireless signal from the RW device as the driving power, and the built-in 1 (or LSI or other integrated circuit operates to respond to the received wireless signal (control signal). Various processes can be performed by the radio frequency identification tag to the RW device by using the reflected wave of the received wireless signal. That is, the information such as the tag mountain or the results of the various processes described above can be carried on the reflected wave to perform the pair RW device. In addition, various frequency bands have been utilized in the RFID system, and the UHF band (860 MHz to 960 MHz) has recently attracted attention. The UHF band and the existing application No. 9612818 have been revised to replace the 13.56-inch band on July 22, 100. Long-distance communication is possible compared to the 2.45 GHz band. 868 MHz is used in Europe, 915 MHz is used in the United States, and frequencies around 953 MHz are used in Japan. Radio frequency identification tags (hereinafter also referred to as "tags") of UHF bands The communication distance varies depending on the performance of the integrated circuit such as the IC chip or the LSI used in the tag, and is approximately on the left and right. It is about 1 watt (w). The conventional radio frequency identification tag is described, for example, in the patent documents 丨 to 3 described later. The technique of Patent Document 1 is to suppress communication even when an RFID tag is used close to the radio wave absorber. The reduction in distance can ensure the guiltiness of overnight. Therefore, Patent Document 1 discloses an RFID tag including: a rectangular parallelepiped dielectric member having a predetermined dielectric constant, the dielectric body The surface of the member is formed into a circular transmitting and receiving antenna pattern by etching or the like and is electrically connected to the antenna pattern 1 through the wafer interface (: a wafer. According to the RTM label, when it is used in a bottle filled with liquid or When an object such as a human body having a constant electric constant is formed, a small loop antenna can be formed by an antenna pattern around the dielectric member, and a current loop can be formed in the attached object to form a larger current loop. The gain of the loop antenna is increased to lengthen the communication distance. The technique of Patent Document 2 is for the purpose of producing an RFID tag having a long communication distance and printing is also very easy. Therefore, Patent Document 2 The label is a composite member and a second component, wherein the p component includes a plate-shaped first base made of a dielectric body; and a gold cover covering the first surface of the front surface of the second base, and 2 parts include: a plate-shaped second base; set in 1360861 - __ No. 9612818 application ' | 100 years July 22 曰 correction replacement, the second base, and the metal layer of the first part a metal pattern constituting a communication antenna; a circuit chip connected to the metal pattern and capable of wireless communication through the communication antenna; and a second substrate connected to the surface of the first substrate The metal layer of the first component and the metal pattern of the second component are electrically connected to each other by the conductive member with respect to the second surface of the first surface. The object of the technique of Patent Document 3 is to provide an RFID tag which can ensure a good communication state by suppressing a change in resonance frequency or Q value even when disposed inside a device containing a metal material. Therefore, in Patent Document 3, the label-shaped label is formed by a circular disk-shaped substrate having a loop antenna pattern and 1C, and a disk-shaped magnetic plate having a diameter substantially equal to the substrate. The inductance can be easily adjusted by straightening a portion of the magnetic plate around a portion of the magnetic plate. Therefore, even when a metal member or the like is disposed inside the machine, the influence of the 15 magnetic plates can be suppressed, and the inductance of the metal material can be reduced and the inductance of the magnetic half can be increased by setting the width of the cut portion. Offset each other to compensate for changes in the resonant frequency or Q value to ensure a good communication state. Patent Document 1: JP-A-2006-53833, JP-A-2006-301690, JP-A-2006-301-101, JP-A No. 2006-331101, No. 2006-331101, No. 2006-331101, the disclosure of which is hereby incorporated by reference. When the RFID tag is attached to the metal, there is a 7th No. 9612918 application, and the correction of the impedance circuit or the gain of the integrated circuit (hereinafter referred to as the wafer) of the 1C chip or LSI is corrected. A situation that causes communication difficulties. Therefore, as in the techniques of the aforementioned Patent Documents 1 to 3, various attempts have been made to make the antenna pattern of the radio frequency identification tag into a ring shape. In the radio frequency identification tag having the loop antenna pattern, the susceptance component of the chip (the reciprocal of the impedance) When the admittance imaginary part (usually indicated by B) is large, it is difficult to adjust the impedance matching (hereinafter also referred to as "matching adjustment"). That is, since the equivalent circuit of the chip mounted on the radio frequency identification tag can be juxtaposed The capacitance component Cep and the parallel resistance component Rcp indicate that the susceptance component B mainly changes depending on the capacitance component Cep. When the capacitance component Ccp is excessively large, it is difficult to design and adjust the matching antenna impedance. For example, as shown in Fig. 13 (specific permittivity vs. Ccp characteristics), the method of adjusting the impedance of the antenna is to change the specific dielectric constant of the dielectric (substrate) formed with the antenna pattern. Small), the corresponding impedance of the antenna pattern can be increased, and the dielectric constant of the dielectric body also has its narrowing limit (the minimum value is the dielectric constant of air = 1), and it is difficult to correspond to the limit. Corresponding to the wafer required for the capacitance component Cep (Fig. 13_£52). Further, although the matching adjustment can be performed by changing the entire length of the loop antenna pattern, the gain is lowered when the total length of the loop is shortened. SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and an object thereof is to provide a radio frequency identification tag which can suppress a decrease in gain and can be easily adjusted to match a wafer. Further, the present invention is not limited to the above-described object, and another object thereof is to exert an effect obtained by implementing each structure shown in the best mode of the invention described later, and which is an effect that cannot be obtained by the prior art. Application No. 96129818 | Correction and Replacement by July 22, 100 Means for Solving the Problem In order to achieve the above object, the present invention uses the radio frequency identification display and the method of manufacturing the radio frequency identification tag shown below. (1) That is, the radio frequency identification tag of the present invention includes a wafer connection portion that is connectable to a wafer; an antenna pattern that is annular and electrically connected to the wafer connection portion; and a conduction member that turns on the antenna Part of the graphics. (2) At this time, the conduction members may be respectively provided at symmetrical positions centering on the wafer connecting portion. (3) Further, the antenna pattern may be provided on a surface layer of the dielectric member, and the conductive member is formed by a through hole, and the through hole passes through the inside of the dielectric member to sandwich the dielectric The aforementioned antenna patterns on the opposite sides of the member are electrically connected to each other. (4) Further, the antenna pattern may be provided on a surface layer of the dielectric member, and the conductive member may be formed of a side conductor, and the side conductor system may be the dielectric body by a side surface of the dielectric member The aforementioned antenna patterns on the opposite sides of the member are electrically connected to each other. (5) Further, the aforementioned through-hole may be set such that the larger the diameter thereof, the smaller the area of the conductor portion. (6) Moreover, the through-hole may be attached to only one of the inner walls with a conductor layer. The method of manufacturing a radio frequency identification tag of the present invention comprises the steps of forming a loop antenna pattern electrically connected to a wafer connection portion of the connectable wafer, and forming a conduction member that turns on a portion of the antenna pattern. 1360861 Application No. 96129818 1 〇〇 〇 〇 July 22 correction replacement (8) At this time, the interval of the plurality of above-mentioned conduction members can also be changed, thereby adjusting the impedance matching with the wafer. Advantageous Effects of Invention According to the present invention described above, by providing the conductive member, it is possible to reduce the impedance of the antenna pattern without changing the physical full length of the loop antenna pattern, and it is possible to suppress the gain reduction. Radio frequency identification tags that are matched to the mounted chips are placed. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a perspective view schematically showing the structure of a radio frequency identification tag according to a third embodiment of the present invention. Figure 2 is a cross-sectional view of the radio frequency identification tag shown in Figure 1. The $3 diagram graphically displays a perspective view of the simulation model of the RFID tag shown in Figures i and 2. Figure 4 shows the Smiths diagram of the antenna impedance of the analog model shown in Figure 3. Figure 5 shows the Smith chart of the antenna impedance of the analog model shown in Figure 3. Fig. 6 is a perspective view schematically showing a simulation model of the radio frequency identification tag after shortening the loop length of the loop antenna. 20 Figure 7 shows the Smith chart of the antenna impedance of the simulated model shown in Figure 6. Fig. 8 is a view showing a simulation model when the through hole of the radio frequency identification tag shown in Fig. 3 is set to one track. Fig. 9 is a diagram showing the antenna impedance of the simulation model shown in Fig. 8 (Japanese Patent Application No. 10 1360861, filed on Jan. 22, 2011). Fig. 10 is a perspective view schematically showing the structure of the buccal identification tag of the second embodiment of the present invention. Fig. 11 is a graph showing changes in the corresponding capacitance component (Cep) when the position of the side conductor 5 of the radio frequency identification target shown in Fig. 1 is changed. Fig. 12 is a perspective view schematically showing the structure of the radio frequency identification tag of the third embodiment of the present invention. Fig. 13 is a graph showing the change in the corresponding capacitance component (Cep) when the dielectric enthalpy of the substrate (dielectric body) of the radio frequency identification mark is not changed. 10 [Mission Method] BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be described with reference to the drawings. The present invention is not limited to the embodiments shown below, and various modifications may be made without departing from the spirit and scope of the invention. [1] First embodiment: Fig. 1 is a perspective view showing a configuration of a radio frequency identification tag according to a first embodiment of the present invention, and Fig. 2 is an AA cross section of a radio frequency identification tag shown in Fig. i. Figure. 2〇>#The first and second figures show that the radio frequency identification standard woven fabric of the present embodiment includes a substrate (dielectric member) 1 and a conductor pattern on the long side of the substrate. The side surface (the side opposite to the opposite side) is connected to the surface layer of the surface of the face, which is the ring (square) antenna pattern (hereinafter also referred to as a loop antenna) 2 in the wearing view of the second figure; the wafer connection The part (power supply point) 3 is electrically connected to the loop antenna 2 near the center of the substrate surface which constitutes the long side of the loop line 2. 11 1360861 The application of the No. 9612918 is revised and replaced on July 22, The through hole (also referred to as a through hole) 4 is used as a conduction member, and can be electrically connected to the loop antenna 2 formed in the surface of the substrate at a plurality of places (two in FIG. 1 and FIG. 2); an ic wafer or An integrated circuit (chip package) 5 such as an LSI is electrically connected to the wafer connecting portion 3; an outer resin ό is used to cover the entire substrate 1; and the layer 7' is provided in the outer resin 6 Ampoule (post) on the metal and the like. Further, in the first drawing, the pattern of the chip package 5 is omitted, and a part of the pattern of the outer resin 6 is omitted. The substrate 1 is made of a dielectric material having a predetermined dielectric constant, and may be made of, for example, a desired resin such as polytetrafluoroethylene (PTFE) or polyphenylene ether. The 10 antenna pattern 2 can be formed by etching or resisting a metal conductor such as copper or silver. Moreover, as shown in FIG. 1, in order to ensure the desired gain, the antenna pattern 2 can have a symmetrical pattern on the surface of the substrate 1, and the symmetrical pattern is extended from the feeding point 3 to the length direction, and the width is Become bigger. The through hole 4 can be formed by forming a conductive layer by a conductor plating or the like 15 in the inner wall of the hole penetrating the substrate 1, and the ribs shown in the first and second figures are symmetrical about the feeding point 3. Location. Thereby, as shown in the cross-sectional view of FIG. 2, the conductor pattern 2 formed on one of the conductor patterns 2, that is, the opposite sides (surface and inside) of the substrate 1 can be formed by the through holes 4. Electrically connected (conducting) and including a second circular pattern, wherein the conductor pattern 2 formed on the surface of the substrate 20 (inside and on the side) is the outer circumference (long side and short side); The annular pattern 2b is formed by forming a part of the conductor pattern 2 and the through hole 4 formed on the surface layer (inside the surface) of the substrate 1 as an inner circumference, and by using the annular patterns ^, 2b, two currents can be mainly generated. Loop. In addition, the through hole 4 does not have to be located at a symmetrical position, but it is relatively easy to ensure the required gain in the symmetrical position 12 1360861 * No. 96,192, 918, and the correction of the replacement position on July 22, 100. Further, as will be described later, the number of through holes to be provided may be one track. That is, it suffices that the second ring pattern 共有 of the shared-partial ring pattern 2 (2a) can be constructed. In the radio frequency identification tag of the present example constructed as described above, the first change has not been made! 5 ring length of the ring pattern 2a, but to prevent the increase by constituting the second ring pattern 2b, and to rotate (change) the antenna impedance in the counterclockwise direction on the Smith chart to increase the antenna The corresponding capacitance component Ccp of the graph 2. Also, #by changing the distance between the through holes 4 (reduction), the corresponding capacitance component can be adjusted. • CCP (increase). Therefore, it is possible to easily perform impedance matching on the integrated circuit 10 (hereinafter also referred to as the wafer 5 or the tag LSI 5) having a large capacitance susceptance component. As shown in Fig. 3, the external dimensions of the RFID tag are set to be 69 mm long, 35 mm wide, and 5 mm thick, and the thickness of the antenna pattern 2 (conductor thickness) is Ιίμηι, and its conductivity is 5xl〇6s/m. 2 Modeling, as an example, the change in antenna impedance when the through hole 4 is provided for the antenna pattern 2 is shown by the Smith chart of Fig. 4. ^ In the Smith chart shown in Fig. 4, the position indicated by 0 shows the antenna impedance of 950 MHz when the through hole 4 is not provided, and the position indicated by 丨 shows the antenna impedance when the through hole 4 is provided. The antenna impedance is rotated (changed) in the counterclockwise direction, so that the corresponding capacitance of the antenna pattern 2 can be increased to eight 20 Ccp. Therefore, as shown in Fig. 5, the impedance matching with the wafer 5 can be matched, and the impedance of the δ ray wafer 5 is different from the relationship between the two complex numbers indicated by 1 on the Smith chart and the capacitance component is large. Further, as shown in the first table and the second table described below, it is understood that the radio frequency identification mark is attached to the metal and exists in the free space. That kind of 13 1360861 No. 96129918 application 1 year, July 22, when the replacement is replaced, the gain of the through hole 4 and the drop of the communication are less [Table 1] Gain comparison _____ Gain [dBi] Uses through-hole matching to shorten the % length when ΐΐίΛ is 1.93 1.11 ~---- 6 Λ Φ Between 0.89 -2.95-- No through hole no change 3.38 1.91 and ring length [Table 2] In addition The communication distance (Γ) shown in Table 2 can be calculated by the following formulas (1) and (2). 10 Communication distance than light communication distance [m] With through hole matching, the ring length is short and there is no through hole, and when the ring length is i A, it is 1.873 1.695^*^-- no change free space 1.276 0.755, ^- - 0.179 ^___ 0.198 [Math 1] fPt'Gt'Gr-q 4^ν ΤάΓ~~ ... (ι) ^RcRa ~\Ζ^^ - (2) λ : Wavelength

Pt :讀寫(RW)裝置之功率 Gt :天線增益 q:匹配係數Pt : power of the read/write (RW) device Gt : antenna gain q: matching coefficient

Pth :晶片5之最小動作之功率 Gr :標籤天線增益Pth: the power of the minimum action of the chip 5 Gr: the tag antenna gain

Rc、Xc :晶片5之電阻(電抗Zc=Rc+jXc)Rc, Xc: resistance of the wafer 5 (reactance Zc = Rc + jXc)

Ra、Xa :天線圖形之電阻(電抗Za=Ra+jXa) 14 第96129818號申請案 1〇〇年〇7月22日修正替換 杈擬之計算條件如下面之第3表所示。 【第3表】Ra, Xa: Resistance of the antenna pattern (reactance Za = Ra + jXa) 14 Application No. 9612918 1 Revision of the year of July 22 Revision The calculation conditions of the simulation are shown in Table 3 below. [Table 3]

此外’在前述第3表中’ Rep相當於晶片5中為阻抗Zc 倒數之導納(Yc=1/Zc=G+jB=(l/Rcp)+j(〇Ccp)的電導(G)成 刀,Ccp則相當於積體電路5之導納(Ye)的電納(B)成分。 又’如第6圖所示’例如將射頻識別標籤的長度由69mm 縮短為42mm,使天線圖形2之環長變短’即可如第7圖所 示,在史密斯圖上使天線阻抗朝逆時針方向變化。此時, 如則述之第1表及第2表所示’因天線圖形2之環長變短’增 益就會降低而使通信距離變短。 此外’如第1表及第2表所示,在未設置通孔4且環長也 未調整時,增益會變最高,但晶片5之電容成分Cep大時, 就會無法進行匹配,而使通信距離變短。 因此’如本例之設有通孔4者,其總合性能較高。 (通孔4為1道時) 如第8圖所示’前述通孔4數亦玎為1道。此外,第8圖 所示之模型除了通孔數之外,其他皆與第3圖所示之模型相 同。如此,如第9圖所示,本發明人由模擬而可確認,即使 在將通孔數設成1道時,也可在史密斯圖上使天線阻抗朝逆 時針方向旋轉,且增益也不比如前述設置2道通孔4時遜色。 第96129818號申請案 100年07月22日修正替換 想當然,前述旋轉量(角度)係設置2道通孔4者較大。也 鱿是說,藉由改變通孔數’即可調整天線阻抗之電容成分 Ccp之可變量。因此’可藉由增加通孔數來對應較大之對應 電容成分Cep。 [2]第2實施形態 第10圖係模式性地顯示本發明之第2實施形態之射頻 熾別標籤之結構的立體圖,且該第10圖所示之射頻識別標 籤係設置導體圖形(側面導體)8來代替設置前述通孔4,且該 側面導體8係由基板1中供電點3所在之面(表面)之天線圖形 2(以供電點3為中心之對稱位置2處)的一部份向基板1之寬 度方向延伸,且通過基板1之長邊側之側面,而與對向於前 述表面之面(裡面)的天線圖形2連通者。 即’在本例中,係藉由側面導體8通過基板丨之側面, 互相導通設於基板1之表裡面的天線圖形2,該側面導體8即 可發揮與作為前述導通構件之通孔4同等的效果。此種結構 可在不易在基板1設置通孔4時發揮效用。此外,在第1〇圖 中,S2係顯示側面導體8之間隔。唯,在本例中,側面導體 8不一定要在以供電點3為中心之對稱位置處,亦可只在基 板1之同一側面設置丨處。 藉此,在該射頻識別標籤中,包含有以形成於基板1 之表裡面的導體圖形2為外周(長邊及短邊)之第1環形圖 形及以形成於基板1之表裡面的一部份導體圖形2和側面 導體8為内周之第2環形圖形。 因此可抑制增益降低,並可在史密斯圖上,使天線 1360861 第96129818號申請案 100年07月22日修正替換 阻抗朝逆時針方向旋轉(變化),而可增大天線圖形2之對應 電容成分CcP ° 又,藉由改變側面導體8間之距離S2(縮小),即可調整 對應電容成分Cep(增大)。因此,可輕易地對具大電納成分 5 之晶片5進行阻抗匹配。 舉一例來說,可將基板1之尺寸設為長7〇mmx寬44mmx 厚3.14mm,且基板1之比介電常數6『為6.05 ’介電損失角tan8 為0.003,天線圖形2之寬度W為25mm,由該天線圖形2向側 面導體8延伸之導體部分的寬度為5mm,而側面導體8之間 10 隔S2改變時之對應電容成分Cep之變化顯示於第11圖。 如該第11圖所示,不論是使用頻率為915MHz、953 MHz哪一者,藉由將側面導體8之間隔S2縮小,皆可增大對 應電容成分Cep ° [3]第3實施形態 15 第12圖係模式性地顯示本發明之第3實施形態之射頻 識別標籤之結構的立體圖,該第12圖所示之射頻識別標籤 設有孔面積較前述通孔4大之四角枉狀貫通孔(穿通孔)9’且 該貫通孔9之至少任一側壁(内壁)附加有與形成於基板1之 表裡面之天線圖形2導通的金屬鍍層(導體鍍層)91,來代替 20 前述通孔4。 即,在本例中,藉由附加在貫通孔9之側壁的金屬鍍層 91,即可互相導通形成於基板1之表裡面的天線圖形2,該 金屬鍍層91可發揮與作為已述之導通構件的通孔4同等的 效果。此外’在本例中’貫通孔9(金屬鍍層91)也不一定要 17 1360861 第 96129818 號申 100年07月22日修正替換 在以供電點3為中心之對稱位置處,亦可只設在1處。又, 貫通孔9的形狀並不限於四角柱狀,亦可為三角柱或圓柱 狀。 又,在第12圖中’金屬鍍層91係附加在貫通孔9之4個 5側壁中離供電點3最遠之位置的一整面側壁上,亦可附加在 其他側壁上。又,亦可只在側壁之一部份附加金屬鍍層91。 例如’當貫通孔9之面積(直徑)大且側壁(内壁)之面積 大時,若在其整面附加金屬鍍層91,天線圖形2中之電流分 布就容易產生混亂,而使增益降低,所以會有只在側壁之 10面之一部份附加金屬鍍層91較佳的情形。例如,可在側壁 之面附加線狀金屬鍍層91。即,貫通孔9最好是設定成其直 徑越大,則導體部分之面積越小。 藉此,該射頻識別標籤包含有第1環形圆形,係分別以 幵>成於基板1之表面的導體圖形2為長邊(對向之2邊)及短邊 15 (剩下之對向之2邊)者;及第2環形圖形,係以形成於基板i 之表面的一部份導體圖形2為長邊,且以附加於貫通孔9側 壁之金屬鍍層91為短邊者。 在如上述構成之本例之射頻識別標籤中,亦未改變第i 環形圖形之環長,而是藉由構成第2環形圖形防土增益降 20低,並可在史密斯圖上使天線阻抗朝逆時針方向旋轉(變 化)。即,可使天線圖形2之對應電容成分Cep増大。 又,藉由改變貫通孔9間(金屬鍍層91間)之距離(縮 小),可調整對應電容成分Cep(增大)。因此,可輕易地對具 大電納成分之晶片5進行阻抗匹配。此外,金屬鍍層91間之 18 第96129818號申請案 __!〇〇年〇7月22日修正替換 距離不僅可藉由改變貝通孔9之設置位置來改變,還可藉由 改變金屬鍍層91之附加位置來改變,而不需改變貫通孔9之 設置位置。 [4]其他 5 在前述實施形態中,基本上是藉由改變設於基板1之通 孔4、與天線圖开>2連通之側面導體8、或貫通孔9等導通構 件之數目或間隔’來調整天線阻抗(主要為對應電容成分 Cep),亦可併用其他調整方法。例如’亦可附加地改變天 線圖形2之寬度’或改變晶片5在基板1上之搭載位置’或改 10 變基板1之介電常數。 產業上利用之可能性 如以上詳述,根據本發明,可抑制增益降低,並可實 現可輕易調整與所搭載之晶片之匹配調整的射頻識別標 籤,所以在無線通信技術領域,或物品之生產、庫存、流 15通管理、P〇s系統、保全系統等技術領域中極為有用。 【闽式簡單說明】 第1圖係模式性地顯示本發明之第丨實施形態之射頻識 別標籤之結構的立體圖。 第2圖係第1圖所示之射頻識別標籤之A_A截面圖。 2〇 第3圖係模式性地顯示第1圖及第2圖所示之射頻識別 標籤之模擬模型的立體圖。 第4圖係顯示第3圖所示之模擬模型之天線阻抗的史密 斯圖。 第5圖係顯示第3圖所示之模擬模型之天線阻抗的史密 1360861 _ 第96129818號申請案 100年07月22日修正替換 斯圖。 第6圖係模式性地顯示縮短環形天線之環路長後之射 頻識別標籤之仿真模型的立體圖。 第7圖係顯示第6圖所示之模擬模型之天線阻抗的史密 5 斯圖。 第8圖係顯示將第3圖所示之射頻識別標籤之通孔設成 1道時之仿真模型的圖。 第9圖係顯示第8圖所示之模擬模型之天線阻抗的史密 斯圖。 10 第10圖係模式性地顯示本發明之第2實施形態之射頻 識別標籤之結構的立體圖。 第11圖係顯示第10圖所示之射頻識別標籤之側面導體 的位置改變時之對應電容成分(Cep)之變化的圖表。 第12圖係模式性地顯示本發明之第3實施形態之射頻 15 識別標籤之結構的立體圖。 第13圖係顯示射頻識別標籤之基板(介電體)之比介電 常數改變時之對應電容成分(Cep)之變化的圖表。 20 20 1360861 第96129818號申請案 100年07月22日修正替換 【主要元件符號說明】 2.. .天線圖形 • 2a...第1天線圖形 • 2b...第2天線圖形 3.. .晶片連接部 4.. .通孔 ' 5...積體電路 6…外包樹脂 7.. .接著部 8.. .側面導體 9…貫通孔 91…金屬鍵層 A...線 52.. .間隔 W...寬度Further, 'in the third table, 'Rep corresponds to the conductance (G) of the reciprocal of the impedance Zc in the wafer 5 (Yc=1/Zc=G+jB=(l/Rcp)+j(〇Ccp)) The knife, Ccp is equivalent to the susceptance (B) component of the admittance (Ye) of the integrated circuit 5. Also, as shown in Fig. 6, for example, the length of the radio frequency identification tag is shortened from 69 mm to 42 mm, so that the antenna pattern 2 As the length of the loop becomes shorter, the antenna impedance can be changed counterclockwise on the Smith chart as shown in Fig. 7. At this time, as shown in the first table and the second table, As the length of the loop becomes shorter, the gain is reduced and the communication distance is shortened. In addition, as shown in Tables 1 and 2, when the through hole 4 is not provided and the loop length is not adjusted, the gain becomes the highest, but the wafer When the capacitance component Cep of 5 is large, the matching cannot be performed, and the communication distance is shortened. Therefore, as in the case of the through hole 4 of this example, the total performance is high. (When the through hole 4 is one channel) As shown in Fig. 8, the number of the aforementioned through holes 4 is also one. In addition, the model shown in Fig. 8 is the same as the model shown in Fig. 3 except for the number of through holes. Figure 9 shows The inventors have confirmed by simulation that even when the number of through holes is set to one, the antenna impedance can be rotated counterclockwise on the Smith chart, and the gain is not inferior as in the case of setting the two through holes 4 as described above. The application of the No. 9612818 is revised on July 22, 100. Of course, the rotation amount (angle) is larger than that of the two through holes. It is also said that the antenna impedance can be adjusted by changing the number of through holes. The capacitance component Ccp is variable. Therefore, the corresponding capacitance component Cep can be correspondingly increased by increasing the number of via holes. [2] The second embodiment is a schematic representation of the second embodiment of the present invention. A perspective view of the structure of the radio frequency tag, and the radio frequency identification tag shown in FIG. 10 is provided with a conductor pattern (side conductor) 8 instead of the through hole 4, and the side conductor 8 is powered by the power supply point 3 in the substrate 1. A portion of the antenna pattern 2 (the symmetrical position 2 centered on the power supply point 3) on the surface (surface) extends in the width direction of the substrate 1 and passes through the side of the long side of the substrate 1, and is opposed to On the surface of the aforementioned surface (inside) The line pattern 2 is connected. That is, in this example, the side conductor 8 passes through the side surface of the substrate ,, and the antenna pattern 2 provided on the surface of the substrate 1 is electrically connected to each other, and the side conductor 8 can be used as the conduction. The effect of the through hole 4 of the member is equivalent. This structure can be used when it is difficult to provide the through hole 4 in the substrate 1. Further, in the first drawing, S2 shows the interval between the side conductors 8. However, in this example, The side conductor 8 does not have to be at a symmetrical position centered on the power supply point 3, or may be disposed only on the same side of the substrate 1. Thereby, the radio frequency identification tag is included to be formed on the substrate 1. The conductor pattern 2 in the front surface is a first ring pattern of the outer circumference (long side and short side) and a second ring pattern in which a part of the conductor pattern 2 and the side conductor 8 formed on the surface of the substrate 1 are inner circumferences. Therefore, the gain reduction can be suppressed, and the corresponding capacitance component of the antenna pattern 2 can be increased by rotating (changing) the corrected replacement impedance in the counterclockwise direction on the Smith chart by the antenna 1360861, No. 96,298,881. CcP ° Further, by changing the distance S2 (reduction) between the side conductors 8, the corresponding capacitance component Cep (increase) can be adjusted. Therefore, the wafer 5 having the large susceptance component 5 can be easily impedance-matched. For example, the size of the substrate 1 can be set to be 7 mm long, 44 mm wide, and 3.14 mm thick, and the dielectric constant 6 of the substrate 1 is 6.05', the dielectric loss angle tan8 is 0.003, and the width of the antenna pattern 2 is W. The width of the conductor portion extending from the antenna pattern 2 to the side conductor 8 is 5 mm, and the change in the corresponding capacitance component Cep when the side surface conductor 8 is changed by S2 is shown in Fig. 11. As shown in Fig. 11, regardless of the frequency of use of 915 MHz or 953 MHz, by reducing the interval S2 of the side conductors 8, the corresponding capacitance component Cep ° can be increased. [3] The third embodiment 15 12 is a perspective view schematically showing a structure of a radio frequency identification tag according to a third embodiment of the present invention, and the radio frequency identification tag shown in FIG. 12 is provided with a four-corner-shaped through hole having a hole area larger than that of the through hole 4 ( Instead of the aforementioned through hole 4, a metal plating layer (conductor plating layer) 91 which is electrically connected to the antenna pattern 2 formed on the front surface of the substrate 1 is attached to at least one of the side walls (inner wall) of the through hole 9. That is, in this example, by the metal plating layer 91 attached to the side wall of the through hole 9, the antenna pattern 2 formed on the inside of the substrate 1 can be electrically connected to each other, and the metal plating layer 91 can function as a conduction member as described above. The through hole 4 has the same effect. In addition, in this example, the through hole 9 (metal plating layer 91) does not have to be 17 1360861. The number of the 9612298 is applied to the symmetrical position centered on the power supply point 3, and may be set only at the symmetrical position centered on the power supply point 3 1 place. Further, the shape of the through hole 9 is not limited to a square column shape, and may be a triangular column or a columnar shape. Further, in Fig. 12, the metal plating layer 91 is added to the entire side wall of the four side walls of the through hole 9 which is the farthest from the feeding point 3, and may be attached to the other side wall. Further, the metal plating layer 91 may be added only to one of the side walls. For example, when the area (diameter) of the through hole 9 is large and the area of the side wall (inner wall) is large, if the metal plating layer 91 is added to the entire surface thereof, the current distribution in the antenna pattern 2 tends to be disordered, and the gain is lowered. There may be a case where a metal plating layer 91 is added only to one of the ten faces of the side wall. For example, a linear metal plating layer 91 may be added to the side surface of the side wall. That is, it is preferable that the through hole 9 is set such that the larger the diameter thereof, the smaller the area of the conductor portion. Thereby, the radio frequency identification tag includes a first circular circle, and the conductor pattern 2 formed on the surface of the substrate 1 is a long side (two sides) and a short side 15 (the remaining pair) And the second ring pattern is such that a part of the conductor pattern 2 formed on the surface of the substrate i is a long side, and the metal plating layer 91 attached to the side wall of the through hole 9 is a short side. In the radio frequency identification tag of the present example constructed as described above, the ring length of the i-th ring pattern is also not changed, but the anti-soil gain of the second ring pattern is lowered by 20, and the antenna impedance is made on the Smith chart. Rotate (change) counterclockwise. That is, the corresponding capacitance component Cep of the antenna pattern 2 can be made larger. Further, by changing the distance (reduction) between the through holes 9 (between the metal plating layers 91), the corresponding capacitance component Cep (increased) can be adjusted. Therefore, impedance matching of the wafer 5 having a large susceptance component can be easily performed. In addition, the application of the metal plating layer 91, No. 96,192,818, __! 〇〇 〇 〇 July 22, the correction replacement distance can be changed not only by changing the position of the Beton hole 9 but also by changing the metal plating layer 91 The additional position is changed without changing the setting position of the through hole 9. [4] Others 5 In the above embodiment, the number or interval of the conduction members such as the side conductors 8 or the through holes 9 that are connected to the through holes 4 of the substrate 1 and the antenna pattern opening > 'To adjust the antenna impedance (mainly for the corresponding capacitance component Cep), other adjustment methods can be used in combination. For example, the width of the antenna pattern 2 may be additionally changed or the mounting position of the wafer 5 on the substrate 1 may be changed or the dielectric constant of the substrate 1 may be changed. Industrial Applicability As described above, according to the present invention, it is possible to suppress a decrease in gain, and to realize a radio frequency identification tag that can be easily adjusted to match the mounted wafer, so that it is in the field of wireless communication technology or production of articles. It is extremely useful in technical fields such as inventory, flow 15 management, P〇s system, and security system. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a perspective view schematically showing the configuration of a radio frequency identification tag according to a third embodiment of the present invention. Figure 2 is a cross-sectional view of the A-A of the RFID tag shown in Figure 1. 2〇 Fig. 3 is a perspective view schematically showing a simulation model of the radio frequency identification tag shown in Figs. 1 and 2 . Fig. 4 is a Smith chart showing the antenna impedance of the simulation model shown in Fig. 3. Fig. 5 is a diagram showing the antenna impedance of the simulation model shown in Fig. 3, 1360861 _ No. 96,192, 918. Fig. 6 is a perspective view schematically showing a simulation model of the radio frequency identification tag after shortening the loop length of the loop antenna. Fig. 7 is a Smith chart showing the antenna impedance of the simulation model shown in Fig. 6. Fig. 8 is a view showing a simulation model when the through hole of the radio frequency identification tag shown in Fig. 3 is set to one track. Fig. 9 is a Smith chart showing the antenna impedance of the simulation model shown in Fig. 8. 10 is a perspective view schematically showing the configuration of a radio frequency identification tag according to a second embodiment of the present invention. Fig. 11 is a graph showing changes in the corresponding capacitance component (Cep) when the position of the side conductor of the radio frequency identification tag shown in Fig. 10 is changed. Fig. 12 is a perspective view schematically showing the configuration of the radio frequency 15 identification tag of the third embodiment of the present invention. Fig. 13 is a graph showing changes in the corresponding capacitance component (Cep) when the dielectric constant of the substrate (dielectric body) of the radio frequency identification tag is changed. 20 20 1360861 Application No. 96129918 Correction and replacement on July 22, 100 [Description of main component symbols] 2.. Antenna pattern • 2a... 1st antenna pattern • 2b... 2nd antenna pattern 3.. Wafer connection portion 4.. through hole '5...integrated circuit 6...outer resin 7...subsequent portion 8.. side conductor 9...through hole 91...metal bond layer A...line 52.. Interval W...width

21twenty one

Claims (1)

丄刪861 第96129818號申請案 1〇〇年07月22日修正替換 卞、申請專利範圍: - L —種射頻識別標籤’其特徵在於包含有: 晶片連接部,係可連接晶片者; 天線圖形,係呈環狀且電性連接於前述晶片連接部 5 者;及 導通構件’係導通前述天線圖形之一部份者。 2.如申請專利範圍第1項之射頻識別標藏,其中前述導通 構件係分別設於以前述晶片連接部為中心之對稱位置丄 861 861 No. 96,192, 918, filed on July 22, 1st, revised, 申请, patent application scope: - L - a type of radio frequency identification tag 'characterized to include: wafer connection, can be connected to the chip; antenna graphics And being electrically connected to the wafer connecting portion 5; and the conducting member' is a portion of the antenna pattern. 2. The radio frequency identification of claim 1, wherein the conductive members are respectively disposed at a symmetrical position centering on the wafer connection portion. 處。 10 3_如申請專利範圍第1項之射頻識別標籤,其中 前述天線圖形係設於介電體構件之表層面, 且前述導通構件係由穿通孔構成,且該穿通孔係通 過刖述介電體構件之内部,將前述介電體構件之對向之 各面上的前述天線圖形互相導通者。 15 4·如申請專利範圍第1項之射頻識別標籤,其中At the office. The radio frequency identification tag of claim 1, wherein the antenna pattern is disposed on a surface layer of the dielectric member, and the conductive member is formed by a through hole, and the through hole is through a dielectric Inside the body member, the antenna patterns on the respective faces of the dielectric member are electrically connected to each other. 15 4. If you apply for the RFID tag of item 1 of the patent scope, 前述天線圖形係設於介電體構件之表層面, 且前述導通構件係由側面導體構成,且該側面導體 係通過前述介電體構件之側面,將前述介電體構件之對 向之各面上的前述天線圖形互相導通者。 20 5·如申清專利範圍第3項之射頻識別標籤,其中前述穿通 孔係設定成其直徑越大,則導體部分之面積越小。 6.如申請專利範圍第5項之射頻識別標籤,其中前述穿通 孔僅内壁之一部份附加有導體鍍層。 7· -種射頻識別標籤之製造方法,其特徵在於包含有以下 22 1360861 ' 第96129818號申請案 100年07月22日修正替換 步驟: 形成電性連接於可連接晶片之晶片連接部的環狀 天線圖形;及 形成導通前述天線圖形之一部份的導通構件。 ' 5 8.如申請專利範圍第7項之射頻識別標籤之製造方法,係 改變複數前述導通構件之間隔,藉此調整與前述晶片之 阻抗匹配。The antenna pattern is disposed on a surface layer of the dielectric member, and the conductive member is formed by a side conductor, and the side guiding system passes the opposite sides of the dielectric member through the side surface of the dielectric member. The aforementioned antenna patterns on the other are mutually conductive. 20 5. The radio frequency identification tag of claim 3, wherein the through-hole is set such that the larger the diameter, the smaller the area of the conductor portion. 6. The radio frequency identification tag of claim 5, wherein the through hole has only one portion of the inner wall to which a conductor plating is attached. 7. A method of manufacturing a radio frequency identification tag, comprising the following 22 1360861 'Application No. 96,192, 918, 100 July, 2011, a modification and replacement step: forming a ring electrically connected to a wafer connection portion of a connectable wafer An antenna pattern; and a conductive member forming a portion of the antenna pattern. The manufacturing method of the radio frequency identification tag according to the seventh aspect of the patent application is to change the interval of the plurality of the above-mentioned conductive members, thereby adjusting the impedance matching with the aforementioned wafer. 23 1360861 第96129818號申請案 100年07月22日修正替換 七、指定代表圓: (一) 本案指定代表圖為:第(1 )圖。 (二) 本代表圖之元件符號簡單說明: 1.. .基板 2.. .天線圖形 3.. .晶片連接部 4.. .通孔 5.. .積體電路 6.. .外包樹脂 A · · _ 線23 1360861 Application No. 96129918 Revision and Replacement on July 22, 100. VII. Designated representative circle: (1) The representative representative of the case is: (1). (2) The symbol of the symbol of this representative diagram is briefly described: 1.. Substrate 2.. . Antenna pattern 3... Wafer connection part 4.. . Through hole 5.. Integral circuit 6.. Outsourcing resin A · · _ line 八、本案若有化學式時,請揭示最能顯示發明特徵的化學式:8. If there is a chemical formula in this case, please disclose the chemical formula that best shows the characteristics of the invention:
TW96129818A 2007-08-13 2007-08-13 Rfid tag and method of manufacturing the same tag TWI360861B (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI384396B (en) * 2006-10-11 2013-02-01 Sony Corp The computer can read the storage medium, the regeneration device, the method of displaying the user interface, the method of generating and recording the button data

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI420398B (en) * 2009-02-24 2013-12-21 Tyfone Inc Contactless device with miniaturized antenna
US8453935B1 (en) 2012-01-03 2013-06-04 Southern Taiwan University Broadband RFID label (TAG) antenna for metal

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI384396B (en) * 2006-10-11 2013-02-01 Sony Corp The computer can read the storage medium, the regeneration device, the method of displaying the user interface, the method of generating and recording the button data

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