1357620 九、發明說明： 【發明所屬之技術領域】 本發明係有關於一種用以研磨'輸送及切割晶圓之方 法，更特別有關於一種用以研磨晶圓的方法，研磨時可利 用中空外框輔助研磨膠帶固定該晶圓人 【先前技術】 在半導體封裝製程中，通常是先將晶圓切割成一顆顆的 晶粒（die)12 ’再將這些晶粒做成各具功能的半導體封裝構 造。第1至5圖顯示習知用以切割8吋晶圓的方法。參考 第1圖，提供一晶圓1〇，其具有一主動表面16及一背面 14。將一研磨膠帶2〇貼（付於該晶圓ι〇的主動表面“上。 參考第2圖，藉由機械研磨裝置5〇將該晶圓1〇的背面μ 研磨（gnnchng)。參考第3圖，將一切割膠帶（Dicing τ邛匀4〇 黏貼於研磨後之該晶圓的背面14上。參考第4圖，將 該研磨膠帶20自該晶圓的主動表® 16上移除，並藉由 〇玄切。丨膠帶40將該晶圓i 〇固定於晶圓架i 8上。參考第5 圖以刀割機器之切割刀60沿切割道3 1切割晶圓1 〇， 用以分離晶粒12。 +然而，就習知用以切割8吋晶圓的方法而言，研磨後之 薄曰曰圓的厚度通常小於4密爾由於研磨後之薄晶圓 曰產生勉曲且輸送時並無任何卫具支撐薄晶圓，因此研磨 後之薄晶圓可能會發生晶圓破裂（Wafer Break) 〇 雖然S知用以切割i 2 t^晶圓的方法利用研磨步驟、晶 圓固定步驟及料移除步料合於單—機台内完成（in 01301-TW/ASE2050 13576201357620 IX. Description of the Invention: [Technical Field] The present invention relates to a method for polishing a wafer for transporting and cutting, and more particularly to a method for polishing a wafer, which can be used for grinding The frame assisted by the abrasive tape to fix the wafer holder. [Prior Art] In the semiconductor packaging process, the wafer is usually cut into individual dies 12 ' and then the dies are made into functional semiconductor packages. structure. Figures 1 through 5 show a conventional method for cutting 8 turns of wafer. Referring to Fig. 1, a wafer 1 is provided having an active surface 16 and a back surface 14. A polishing tape 2 is attached (applied to the active surface of the wafer ι.) Referring to Fig. 2, the back surface μ of the wafer 1 is ground by a mechanical polishing device 5 。. A dicing tape (Dicing τ 邛 4 〇 is adhered to the back side 14 of the wafer after grinding. Referring to FIG. 4, the abrasive tape 20 is removed from the active watch® 16 of the wafer, and The wafer is fixed to the wafer holder i 8 by a tape 40. Referring to Fig. 5, the cutting blade 60 of the knife cutting machine cuts the wafer 1 along the cutting path 3 1 for separation. Die 12. However, in the conventional method for cutting 8 turns of wafer, the thickness of the thin round after grinding is usually less than 4 mils due to the distortion of the thin wafer after grinding and the conveyance There is no brace to support the thin wafer, so the wafer may be broken after the polished thin wafer. Although the method of cutting the i 2 t^ wafer is used, the grinding step and the wafer fixing step are used. And the material removal step is completed in the single machine (in 01301-TW/ASE2050 1357620
Line Module)’但是仍無法避免研磨後之薄晶圓可能會發生 晶圓破裂。 因此’便有需要提供一種用以研磨、輸送及切割晶圓之 方法’能夠解決前述的問題。 e 【發明内容】 本發明之一目的在於提供一種用以研磨晶圓的方法，研 磨時可利用該中空外框辅助該研磨膠帶固定該晶圓，因此 # 研磨時之晶圓可得到較佳的固定。 本發明之另一目的在於提供一種用以輪送晶圓的方 法，輸送時可利用中空外框及研磨膠帶支撐研磨後之薄晶 圓’因此研磨後之薄晶圓不會發生晶圓破裂。 為達上述目的，本發明提供一種用以研磨晶圓的方法， 包含下列步驊：提供一晶圓，其具有一主動表面及一背面； 提供一研磨.膠帶及一中空外框，其中該研磨膠帶包含一邊 緣邛伤、一連接部分及一中央部份，該連接部分係位於該 邊緣部份與該中央部份之間；將該研磨膠帶之中央部份貼 附於該μ圓之主動表面，並將該研磨膠帶之邊緣部份貼附 於該中空外框上；將該研磨膠帶之連接部份穿入一大尺寸 環體與λΙ、尺寸環體之間，其中該小尺寸環體係配置於該 $尺寸環體内；將該研磨膠帶之中央部份及該中空外框固 定於一托架上；以及將該晶圓之背面，磨。 由於該晶圓之.背面與該中空外框之間具有預定距離，因 此研磨該晶圓的背面時不會研磨到.該中空外框。再者，由 於研磨時可利用該中空外框輔助該研磨膠帶固定該晶圓， 01301-TW/ASE2050 6, 因此研磨時之晶圓可得到較佳的固定。 本發明另提供一種用以輸送晶的法包 驟：提供一晶11 + 法包含下列步 研磨膠帶及一中*外ir ^ 才面，k供於一 . 二卜框，其中該研磨膠帶包含一邊緣邻 份、-連接部分及—中 以3邊緣邛 /,ν ^ ^ . 、。”該連接部分係位於該邊緣 部伤與該中央部份之間 ^ ^ 爷曰圓”叙主 ，將“研磨膠帶之中央部份貼附於 並將該研磨㈣之邊緣部份貼附於該 中工外框上，將該中空外框面中机 圓士贫 τ工外框固疋於-托架上；以及將該晶 圓由一第一位置輸送至一第二位置。 由於輸送時可利用該中空外框及該研磨膠帶支撐研磨 後之薄晶圓，因此研磨後之薄晶圓不會發生晶圓破裂。 為了讓本發明之上述和其他目的、特徵、和優點能更明 顯，下文將配合所附圖示，作詳細說明如下。 【實施方式】 參考第6圖，其顯示本發明之一實施例孓用以切割晶圓 之方法。參考第7a及7b圖，在步驟丨〇2中，提供一晶圓 210 (諸如8吋或12吋晶圓），其具有一主動表面216'一背 面214及複數個縱向及橫向之切割道231，其中該背面214 係相對於該主動表面216，且該等切割道23丨係位於該主 動表面216上’藉以界定出複數個晶粒212。該晶圓210 之主動表面216上係設有積體電路（integrated circuit ; 1C) (圖未示）。 參考第8a及8b圖，在步驟1〇4中，提供一研磨膠帶 220及一中空外框230，其中該研磨膠帶220包含一邊緣部 01301-TW/ASE2050 1357620 77 2、一連接部分224及一中央部份226，該連接部分 224係位於該邊緣部份222與該中央部份226之間。在步 驟106中’將該研磨膠帶220之中央部份226貼附於該晶 圓2 1 〇之主動表面216，並將譎研磨膠帶220之邊緣部份 222貼附於該中空外框230上。 參考第9a及9b圖，在步驟1〇8中，藉由將一大尺寸環 體232與一小尺寸環體234分別朝下（如箭頭233所示）與 朝上（如箭頭235所示）壓迫該研磨膠帶220而使該小尺寸 環體234配置於該大尺寸環體232内，進而將該研磨膠帶 220之連接部份224穿入該大尺寸環鐘232與該小尺寸環 體234之間，如第10圖所示。由於該小尺寸環體234頂升 該晶圓210，因此該晶圓21〇之背面214與中空外框23〇 之間具有一預定距離該預定距離D大於或等於該大尺 寸環體232與該小尺寸環體234之厚度之任一者。該大尺 寸環體232與該小尺寸環體234可具有相同厚度。 參考第11圖’在步驟110中，藉由一第一真空吸力， 將該研磨膠帶220之中央部份226及該中空外樞23〇分別 固定於一研磨桌（Grinding Table)236及一真空架（Vacuum H〇lder)238上。該真空架238僅吸附該中空外框23〇。該 研磨桌236及該真空架238係可為習知製程專用之托架。 參考第丨2圖，在步驟112中，藉由一研磨裝置25〇將 該晶圓210的背面214研磨，以完成本發明之用以研磨晶 圓的步驟。由於該晶圓210之背面214與該中空外框23〇 之間具有該預定距離D，因此研磨該晶圓2丨〇的背面2 j 4 01301-TW/ASE2050 1357620 時不會研磨到該中空外框230。再者，由於研磨時可利用 該中空外框230輔助該研磨膠帶22〇固定該晶圓21〇，因 此研磨時之晶圓210可得到較佳的固定。在步驟114中， 藉由釋放該第一真空吸力，解除該研磨膠帶22〇之中央部 份226及該中空外框23〇在該研磨桌236及該真空架 上的固定。 參考第13圖’在步驟116中，藉由一第二真空吸力， 將該中空外框230固定於另一真空架238，上。該真空架 238,僅吸附該中空外框23〇。在步驟118中，將研磨後2薄 晶圓210’輸送下一個製程機台，亦即由一第一位置輸送至 一第二位置，以完成本發明之用以輸送晶圓的步驟。由於 輸送時可利用該中空外框23〇及該研磨膠帶22〇支撐研磨 後之薄晶圓210,，因此研磨後之薄晶圓21〇，不會發生晶圓 .破裂（Wafer Break).。 參考第，14圖，在步驟12〇中，將該大尺寸環體Μ〕 該小尺寸環體234分別朝上（如箭頭233,所示）與朝下（如 頭235’所示）移除。在步驟122中，解除該研磨膠帶220 黏性。舉例而言，可藉由照射紫外線（UV)或加熱而解除. 研磨膠帶220之黏性^ 參考第15圖，在步驟124中，將一切割膠帶“ο貼丨 於研磨後之該晶圓21〇,之f面214上。該㈣膠帶⑽ 如同該研磨勝帶220 -樣，該切割膠帶240之邊緣將幻 於中空外框230上。參考第16圖，在步驟126中、二 磨膠帶22G自該晶圓21G，之主動表面216上移除，並藉y 01301-TW/ASE2050 1357620 該切割膠帶240將該晶圓210’固定於該中空外框23〇上 上。參考第17圖，在步驟丨28中，以一分割機器之切割刀 260沿該等切割道231切割該晶圓21〇，，用以分離該等晶 粒2 12，如此以完成本發明之用以切割晶圓的方法。Line Module)' However, it is still unavoidable that the wafer may be broken after the polished thin wafer. Therefore, there is a need to provide a method for polishing, transporting and cutting wafers to solve the aforementioned problems. SUMMARY OF THE INVENTION An object of the present invention is to provide a method for polishing a wafer, which can be used to fix the wafer by using the hollow frame during polishing, so that the wafer can be better when polished. fixed. Another object of the present invention is to provide a method for carrying a wafer by using a hollow outer frame and an abrasive tape to support the polished thin round wafer during transport. Thus, the polished thin wafer does not undergo wafer cracking. To achieve the above object, the present invention provides a method for polishing a wafer, comprising the steps of: providing a wafer having an active surface and a back surface; providing a polishing tape and a hollow outer frame, wherein the polishing The tape comprises an edge bruise, a connecting portion and a central portion, the connecting portion being located between the edge portion and the central portion; the central portion of the abrasive tape is attached to the active surface of the μ circle And attaching an edge portion of the abrasive tape to the hollow outer frame; inserting the connecting portion of the abrasive tape into a large-sized ring body and a λΙ, a size ring body, wherein the small-sized ring system configuration In the $-size ring; the central portion of the abrasive tape and the hollow outer frame are fixed to a bracket; and the back surface of the wafer is ground. Since the back side of the wafer has a predetermined distance from the hollow outer frame, the back side of the wafer is not ground to the hollow outer frame. Furthermore, since the hollow frame can be used to assist the polishing tape to fix the wafer, the 01301-TW/ASE2050 6 can be better fixed during polishing. The invention further provides a method for transporting crystals: providing a crystal 11 + method comprising the following step grinding tape and a medium outer ir ^ surface, k is provided in a second frame, wherein the grinding tape comprises a Edge neighbors, - connected parts, and - 3 edges 邛 /, ν ^ ^ . "The connecting portion is located between the edge portion of the wound and the central portion of the body." The center portion of the abrasive tape is attached and the edge portion of the grinding (4) is attached thereto. The hollow outer frame surface of the hollow outer frame is fixed on the bracket; and the wafer is transported from a first position to a second position. The hollow outer frame and the abrasive tape support the polished thin wafer, so that the wafer after grinding does not cause wafer cracking. In order to make the above and other objects, features, and advantages of the present invention more apparent, A detailed description will be given below with reference to the accompanying drawings. [Embodiment] Referring to Figure 6, there is shown an embodiment of the present invention for cutting a wafer. Referring to Figures 7a and 7b, in step 丨〇2 Providing a wafer 210 (such as an 8-inch or 12-inch wafer) having an active surface 216'-a back surface 214 and a plurality of longitudinal and lateral dicing streets 231, wherein the back surface 214 is opposite the active surface 216 And the cutting lanes 23 are located on the active surface 216 The upper portion of the die 210 is defined by an integrated circuit (1C) (not shown). Referring to Figures 8a and 8b, in step 1〇4 An abrasive tape 220 and a hollow outer frame 230 are provided. The abrasive tape 220 includes an edge portion 01301-TW/ASE2050 1357620 77, a connecting portion 224 and a central portion 226. Between the edge portion 222 and the central portion 226. In step 106, the central portion 226 of the abrasive tape 220 is attached to the active surface 216 of the wafer 2 1 and the edge of the abrasive tape 220 is applied. The portion 222 is attached to the hollow outer frame 230. Referring to Figures 9a and 9b, in step 1-8, the large-sized ring body 232 and the small-sized ring body 234 are respectively directed downward (as indicated by arrow 233). The small amount of the ring body 234 is placed in the large-sized ring body 232, and the connecting portion 224 of the polishing tape 220 is inserted into the polishing tape 220, as shown in the arrow 235. Between the large size ring clock 232 and the small size ring 234, as shown in Fig. 10. Because of this The size ring 234 lifts the wafer 210, so that the back surface 214 of the wafer 21 has a predetermined distance between the hollow frame 23 大于 and the predetermined distance D is greater than or equal to the large size ring 232 and the small size ring. Any of the thicknesses of the body 234. The large-sized ring body 232 and the small-sized ring body 234 may have the same thickness. Referring to FIG. 11 'in step 110, the grinding tape 220 is pressed by a first vacuum suction force The central portion 226 and the hollow outer hub 23 are respectively fixed to a Grinding Table 236 and a Vacuum H lder 238. The vacuum frame 238 only adsorbs the hollow outer frame 23A. The grinding table 236 and the vacuum frame 238 can be brackets dedicated to conventional processes. Referring to Figure 2, in step 112, the back side 214 of the wafer 210 is ground by a polishing apparatus 25 to complete the step of grinding the crystal of the present invention. Since the back surface 214 of the wafer 210 and the hollow outer frame 23〇 have the predetermined distance D, the back surface 2 j 4 01301-TW/ASE2050 1357620 of the wafer 2 is not ground to the hollow. Block 230. Furthermore, since the hollow frame 230 can be used to assist the polishing tape 22 to fix the wafer 21 when polishing, the wafer 210 can be preferably fixed during polishing. In step 114, by releasing the first vacuum suction, the central portion 226 of the abrasive tape 22 and the hollow outer frame 23 are released from the polishing table 236 and the vacuum holder. Referring to Fig. 13', in step 116, the hollow outer frame 230 is fixed to the other vacuum frame 238 by a second vacuum suction. The vacuum holder 238 adsorbs only the hollow outer frame 23A. In step 118, the post-polishing 2 thin wafer 210' is transported to the next processing machine, i.e., from a first position to a second position, to complete the steps of the present invention for transporting wafers. Since the hollow outer frame 23 and the polishing tape 22 〇 can support the polished thin wafer 210 during transportation, the polished thin wafer 21 不会 does not cause wafer rupture (Wafer Break). Referring to Figure 14, in step 12, the large-sized ring body 234 is removed upward (as indicated by arrow 233) and downward (as indicated by head 235'). . In step 122, the adhesive tape 220 is released from stickiness. For example, it can be released by ultraviolet (UV) irradiation or heating. The adhesiveness of the abrasive tape 220. Referring to FIG. 15, in step 124, a dicing tape is affixed to the wafer 21 after grinding. (, the face 214. The (4) tape (10) is like the grinding tape 220, the edge of the cutting tape 240 will be illusory on the hollow frame 230. Referring to Figure 16, in step 126, the second grinding tape 22G The active surface 216 of the wafer 21G is removed, and the dicing tape 240 is fixed to the hollow frame 23 by y 01301-TW/ASE2050 1357620. Referring to Figure 17, In step 28, the wafer 21 is cut along the scribe lines 231 by a dicing blade 260 of a split machine for separating the dies 2 12, thus completing the method for cutting the wafer of the present invention. .
I 另外，未發明提供一種用於晶圓的支撐治具，該晶圓 具有主動表面216。該支撐治具包含一中空外框.230 及一研磨膠帶220。該研磨膠帶220包含一邊緣部份222、 φ 連接为224及一中央部份226 ’其中該連接部分224 係位於該邊緣部份222與該中央部份226之間，該邊緣部 份222係貼附於該中空外框23〇上，且該中 貼附於該晶圓2H)之主動表面216，如第8圖所示。係 該支撐治具另包含一大尺寸環體232及一小尺寸環體 234。該小尺寸環體234係配置於該大尺寸環體232内，其 中該研磨膠帶220之連接部份224係穿入該大尺寸環體232 與該小尺寸環體234之間，如第1〇圖所示。 籲 雖然本發明已以前述實施例揭示，然其並非用以限定本 發明，任何本發明所屬技術領域中具有通常知識者，在不 脫離本發明之精神和範圍内，當可作各種之更動與修改。 因此本發明之保護範圍當視後附之申請專利範圍所界定者 【圖式簡單說明】 第1至5圖&先前技術之用以切割晶圓#方法之立體示 I ° · 第6圖為本發明之一實施例之用以切割晶圓的方法之 01301.TW/ASE2050 10 1357620 流程圖。 第7、8a、8b、9a、9b及10至17圖為本發明之該實施 例之用以切割晶圓的方法之立體或剖面示意圖。In addition, a support fixture for a wafer having an active surface 216 is not provided. The support fixture comprises a hollow outer frame .230 and a grinding tape 220. The abrasive tape 220 includes an edge portion 222, a φ connection 224 and a central portion 226 ′, wherein the connection portion 224 is located between the edge portion 222 and the central portion 226, and the edge portion 222 is attached. Attached to the hollow frame 23, and attached to the active surface 216 of the wafer 2H), as shown in FIG. The support fixture further includes a large size ring 232 and a small size ring 234. The small-sized ring body 234 is disposed in the large-size ring body 232, wherein the connecting portion 224 of the abrasive tape 220 penetrates between the large-sized ring body 232 and the small-sized ring body 234, such as the first layer. The figure shows. Although the present invention has been disclosed in the foregoing embodiments, it is not intended to limit the invention, and any one of ordinary skill in the art to which the present invention pertains can be made without departing from the spirit and scope of the invention. modify. Therefore, the scope of protection of the present invention is defined by the scope of the appended claims [Simplified Drawings] Figures 1 to 5 & Prior Art Stereoscopic I of Method for Cutting Wafer # Method · Figure 6 A flow chart of 01301.TW/ASE2050 10 1357620 for a method of cutting a wafer according to an embodiment of the present invention. Figures 7, 8a, 8b, 9a, 9b, and 10 through 17 are schematic perspective or cross-sectional views of a method for dicing a wafer in accordance with this embodiment of the present invention.
【主要元件符號說明】 10 晶圓 12 晶粒 14 背面 16 主動表面 18 晶圓架 20 研磨膠帶 31 切割道 40 切割膠帶 50 機械研磨裝置 60 切割刀 102 步驟 104 步驟 106 步驟 108 步驟 110 步驟. 112 步驟 114 步驟 116 步驟 118 步驟 120 步驟. 122 步驟 124 步驟 126 步驟 128 步驟 210 晶圓 2105 晶圓 212 晶粒 214 背面 216 主動表面 220 研磨膠帶 222 邊緣部份 01301-TW./ASE2050 11- 1357620 224 連接部分 226 230 中空外框 231 23 2 環體 234 236 研磨桌 238 240 切割膠帶 250 機械研磨裝置 260 D 距離 中央部份 切割道 環體 真空架 切割刀 01301-TW/ASE2050 .12[Main component symbol description] 10 Wafer 12 Die 14 Back 16 Active surface 18 Wafer holder 20 Grinding tape 31 Cutting path 40 Cutting tape 50 Mechanical grinding device 60 Cutting blade 102 Step 104 Step 106 Step 108 Step 110 Step. 112 Step 114 Step 116 Step 118 Step 120 Step 122 Step 124 Step 126 Step 128 Step 210 Wafer 2105 Wafer 212 Die 214 Back 216 Active Surface 220 Abrasive Tape 222 Edge Section 01301-TW./ASE2050 11- 1357620 224 Connection Section 226 230 Hollow frame 231 23 2 Ring body 234 236 Grinding table 238 240 Cutting tape 250 Mechanical grinding device 260 D Distance from the central part of the cutting ring Ring vacuum cutter Cutter 01301-TW/ASE2050 .12