1356211 玖、發明說明： 【發明所屬之技術領域】 本發明是關於光罩及擴散反射板。 【先前技術】 無須背光（backlight)等的光源之反射型顯示元件，例如 反射型液晶顯示元件係組合反射板與控制入射到顯示元件 的光以及被反射板反射的光的光量之光控制裝置（液晶顯 示元件等）’進行顯示，因電力消耗小，故常被利用於攜帶 用的機器。_ 在反射型顯示元件中需要反射外光的擴散反射板，擴 散反射板係散射由自擴散反射板的法線方向偏移1〇〜30度 角度入射的外光，反射散射光到觀察者側。 這種擴散反射板的製造方法有對玻璃或金屬板進行噴 砂加工’藉由藥液處理而平滑化的方法，或利用藉由疊層 膜的熱應力而產生的凹凸之方法等，或利用以自然現象發 生的構造之方法。若使用此等方法，則有可形成完全隨機 配置的散射構造，起因於散射構造的干涉不發生的優點， 但因無法精度佳地形成特定的散射構造，故很難得到高的 反射亮度。而且，其配置由於是根據自然現象，因此缺乏 再現性，品質管理困難。 另一方面，彩色濾光片（color filter)等的液晶構件的情 形’擴散反射板係形成於彩色濾光片之下。此情形因生產 性局，故藉由使用大面積的光罩之近接式曝光（proximity exposure)(總括曝光）的微影（photolithography)技術被使 1356211 以近接式曝光，因使用巨額的大面積的光罩，故在避 免光罩的破損或污染的意義上，光罩與感光性樹脂（光阻 (reS1St))表面的間隙（曝光間隙）通常被以數十~數百# m保 持’達成ΙΟ/zm左右的解析度。曝光間隙係由配置於光罩 的孤立圖案（pattern)的外徑與形成光罩及擴散反射板的玻 璃基板的厚度決定。 而且，藉由在光罩配置對應所希望的光像的孤立圖 案’可再現性佳地製造擴散反射板成大面積基板。 光罩具有由完全透射光的光透射部與完全遮蔽光的遮 蔽部構成的圖案區域，由於以形成比較鮮明的曝光像爲前 提’故爲了以總括曝光穩定地形成擴散反射板所要求的平 滑的散射構造，有有效地利用光罩中的繞射的方法或利用 吸光性光阻的方法。 此技術領域的習知技術已知有不規則地配置俾凹部或 凸部的頂點間距離的分布寬爲平均値的3 0〜9 0 %之擴散反 射板（例如參照日本專利第29 1 2 1 76號公報）。 而且，已知有利用數列配置圖案成螺旋狀的光罩及擴 散反射板（例如參照日本特開2002- 1 42 1 1號公報）。 【發明內容】 但是，在不規則地配置俾凹部或凸部的頂點間距離的 分布寬爲平均値的30~90%之擴散反射板中，因無助於散射 的平坦部多，故反射亮度低。 因此，爲了提高反射亮度而提高凹凸部的規則性的話 會產生干涉條紋。一方面，爲了抑制干涉條紋使規則性降 低的情形，例如利用數列配置圖案成螺旋狀的情形由於是 1356211 螺旋狀，故大致單位區域的周邊部，空隙區域剩餘很多。 因此，爲了製作具有大面積的散射構造之擴散反射板，可 考慮藉由接鄰配置小面積的單位區域以形成大面積。 但是，習知的圖案配置的情形因在接鄰的單位區域的 邊界線中存在空隙區域，故變成不連續，反射亮度會產生 不均勻。 本發明乃鑒於這種問題所進行的創作，其目的爲提供 可在不產生干涉條紋或不均勻的狀態下製造反射亮度高的 擴散反射板之光罩及擴散反射板。 爲了解決上述課題，與本發明有關的光罩係具有接鄰 重複配置配置有複數個孤立圖案的中心點的長方形、平行 四邊形或六角形的單位區域而成的圖案區域，其特徵爲：設 定由單位區域內的中心點構成的複數個德洛內三角形與橫 跨單位區域和接鄰的其他單位區域的邊界線而構成的複數 個德洛內三角形的面積總合爲與單位區域的面積同一之德 洛內三角形群，令構成此三角形群的複數個德洛內三角形 的面積的平均値爲A，標準偏差爲B的情形，中心點係滿 足以下的條件（1)以及（2)而配置， (1) 、70 // m2S AS 120 μ m2 (2) 、0.05 S B/A S 0.25。 本發明的光罩的圖案區域係具有預定形狀（長方形、平 行四邊形或六角形）的單位區域無間隙地重複而成。在此單 位區域內配置有孤立圖案的中心點。此時中心點的排列係 藉由令德洛內三角形群（X)爲母集團的上述平均値A、標準 偏差B規定。此德洛內三角形群（X)係由由單位區域內的中 1356211 · 心點構成的複數個德洛內三角形（y)與橫跨該單位區 接鄰的其他單位區域的邊界線而構成的複數個德洛內 形（ζ)構成。再者’德洛內三角形（γ)以及 德洛內三 (ζ)被設定使德洛內三角形（γ)的總面積與德洛內三角} 的總面積的和與單位區域的面積同一。因此，德洛內 形群（X)的三角形的總面積變成與單位區域的面積同一 外，此情形藉由德洛內三角形群（χ)形成的多角形可與 單位區域同樣地無間隙地重複。中心點的排列被決定 此設定的德洛內三角形群（X)滿足上述條件（1)以及（2) 此，可得到在圖案區域全面中無接縫（邊界線）連續的 圖案的中心點排列。 此處，藉由光罩中的孤立圖案的中心點規定的平均 未滿70// m2的情形因光罩的孤立圖案彼此接近，故在 式曝光時受到影響，無法穩定形成擴散反射板的散射 不佳。另一方面，平均値A比1 20 a m2大的情形因藉 用此光罩的近接式曝光製造的擴散反射板的散射構造 隙變大，無助於散射的平坦部的面積增加，故因散射 成的反射亮度變低。而且，因正反射造成的背景的映 的顯著，故不佳。 而且，因藉由光罩中的孤立圖案的中心點規定的 的値未滿0.05的情形，在藉由使用此光罩的近接式曝 造的擴散反射板的散射構造中因散射光的相位一致， 變強故不佳。一方面，A/B的値比0.25大的情形，因 所造成的反射亮度變低，再者因製造時的光散射性能 動大欠缺穩定性，故不佳。 域和 三角 角形 衫（Z) 三角 。此 前述 俾如 。據 孤立 値A 近接 構造 由使 之間 所造 入變 A/B 光製 干涉 散射 的變 1356211 一方面，如果使用具有藉由本發明的數値範圍規定的 圖案區域之光罩，則藉由利用近接式曝光之微影技術可在 不產生干涉條紋或不均勻的狀態下製造反射亮度高的擴散 反射板。 而且，與本發明有關的擴散反射板係在接鄰重複配置 配置有複數個凹凸部的中心點的長方形、平行四邊形或六 角形的單位區域而成，其特徵爲：設定由單位區域內的中心 點構成的複數個德洛內三角形與橫跨單位區域和接鄰的其 他單位區域的邊界線而構成的複數個德洛內三角形的面積 總合爲與單位區域的面積同一之德洛內三角形群，令構成 此三角形群的複數個德洛內三角形的面積的平均値爲A， 標準偏差爲B的情形，中心點係滿足以下的條件（1)以及（2) 而配置， (1) 、7 0 # m2 S A S 1 2 0 // m2 (2) 、0.05 S B/A S 0.25。 此外，凹凸部係圓錐狀或圓錐台狀等的凹部或凸部， 對於在各單位區域內排列凹部的情形，著眼於凹部的中心 點間的隔離距離，對於在各單位區域內排列凸部的情形， 著眼於凸部的中心點間的隔離距離。 藉由在擴散反射板的凹凸部的中心點規定的平均値A 未滿70 μ m2的情形擴散反射板的散射構造不穩定故不佳。 —方面，平均値A比1 20 V m2大的情形擴散反射板的散射 構造之間隙變大，無助於散射的平坦部的面積增加，故反 射亮度變低，再者，因正反射造成的背景的映入變的顯著， 故不佳。 1356211 藉由在擴散反射板的凹凸部的中心點規定的A/B的値 未滿0.05的情形，因散射光的相位一致，干涉變強故不佳》 —方面，A/B的値比0.25大的情形，因散射所造成的反射 亮度變低，再者因光散射性能的變動大欠缺穩定性，故不 佳。 —方面，因與本發明有關的擴散反射板滿足上述條 件，故在不產生干涉條紋或不均勻的狀態下反射亮度變 局。 【實施方式】 以下針對與實施形態有關的光罩及擴散反射板來說 明。此外對於同一要素使用同一符號，重複的說明省略。 第1圖是與實施形態有關的光罩的俯視圖。 光罩Μ具有對角500mm以上的尺寸K。即此光罩Μ係 使用於近接式曝光。而且，光罩Μ具備擴散反射區域形成 用的圖案區域PR。圖案區域PR係與配置有複數個孤立圖 案Ρ1的單位區域R1同一的區域接鄰重複配置成矩陣狀而 成。 此外，單位區域R1若具有可藉由同一形狀的重複塡充 平面的形狀的話爲佳，不限於長方形爲平行四邊形或六角 形都可以。 此處，複數個孤立圖案Ρ1係由光透射部或遮光部構 成◊孤立圖案Ρ1的形狀爲外形尺寸爲15/zm以下的圓形、 環狀、橢圓形或事實上對應此等形狀的六角形以上的多角 形都可以，環狀的情形孤立圖案P1的寬度爲4ym以下更 佳。外形尺寸係對於孤立圖案P 1爲圓形或環狀的情形意味 -10- 1356211 著外徑的尺寸（直徑），對於橢圓形或多角形的情形意味著 由成爲中心點的重心位置到外周的平均距離的兩倍。 據此，以藉由使用光罩Μ的近接式曝光之微影技術可 形成具有微小的凹凸面的擴散反射板。 第2圖是與實施形態有關的光罩的圖案配置的說明 圖。 在長方形的單位區域R1內存在光透射部C1~C9(複數 個孤立圖案P1)，分別具有中心點11〜19(中心點〇1)。而且， 在經由邊界線Bd2接鄰於單位區域R1的單位區域R2內存 在與單位區域R 1同一排列，具有中心點2 1〜29的光透射部 C21〜29。再者，在經由邊界線Bd3接鄰於單位區域R1的單 位區域R 3內也存在與單位區域R1同一排列，具有中心點 31〜39的光透射部C31〜39。 此處，由單位區域R1內的中心點11〜19構成的複數個 德洛內三角形（Y)與橫跨單位區域R 1和接鄰的其他單位區 域尺2'113的邊界線8(12、8(13，由中心點13、16、19、21〜23、 31 ' 34、37構成的複數個德洛內三角形（Z)的面積的總和係 與單位區域R1的面積同一。因此合倂此等德洛內三角形（Y) 以及（Z)設定爲德洛內三角形群（X)(圖中的斜線部分）。令構 成此德洛內三角形群（X)的複數個德洛內三角形的面積的 平均値爲A，標準偏差爲B的情形，中心點0 1係滿足以下 的條件（1)、（2)而配置》 (1) ' 70/z m2^ \2Q μ. m2 (2) 、0·05 S Β/Α S 0.25。 由具有這種圖案配置的單位區域構成的圖案區域內的 1356211 單位區域彼此變成無接縫而連續。因此，若使用與本實施 形態有關的光罩，則利用藉由近接式曝光的微影技術，可 在不產生干涉條紋或不均勻的狀態下製造反射亮度高的擴 散反射板。 而且，孤立圖案P1的中心點0 1的排列係如以下而決 定。此處在平面上配置有幾個點時，在藉由最接近哪一點 分割該平面內的點而成的圖（芙諾以圖（Voronoi diagram)) 中，稱此被分割的區域爲芙諾區域。稱連接此接鄰的芙諾 區域的母點彼此而成的三角形爲德洛內三角形，可作爲顯 示點群的連接關係的手法而使用。 首先，決定存在於單位區域R1內的孤立圖案P1的中 心點01的數目N，利用電腦決定以X、y爲亂數N個座標 U, y)，在所決定的座標配置中心點01(隨機配置（1))。例 如若令長方形的單位區域的左下角的座標爲原點（0,0)，令 通過原點位於長方形的對角線上的長方形的右上角的座標 爲（Xmax，Ymax)，則 Xmax例如爲 132，YMAX例如爲 396，令 由0至132選擇的亂數X、由0至396選擇的亂數y的一組 爲一個座標，則藉由使此亂數產生N次，可得到N個座標 (x，y)。具體上N例如爲63。此外，座標（0，0)與座標（〇，1) 之間的間隔在光罩上係設定爲0.5 // m。此情形單位區域R 1 的形狀變成各邊66 "mx 198/zm的長方形。接鄰重複配置 此單位區域R1成例如矩陣狀。 其次，在對據此得到的隨機配置（1)的上述德洛內三角 形群（X)中得到德洛內三角形的面積的平均値A以及面積 分布的標準偏差B。各個三角形的面積S若令接鄰的三個 -12- 1356211 中心點〇1的座標爲（a, b)、（c, d)、（e, f)，則如以下表示。 S=(ad+cf+eb-bc-de-fa)/2 此處面積比A + B大的德洛內三角形在縮小的方向移動 中心點01，面積比A-B小的德洛內三角形在擴大的方向移 動中心點0 1。以下詳細說明。1356211 BRIEF DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to a photomask and a diffuse reflection plate. [Prior Art] A reflective display element that does not require a light source such as a backlight, for example, a reflective liquid crystal display element is a light control device that combines a reflecting plate with a light amount that controls light incident on the display element and light reflected by the reflecting plate ( The liquid crystal display device or the like is 'displayed, and since it is small in power consumption, it is often used for a portable device. _ A diffuse reflection plate that needs to reflect external light in a reflective display element. The diffuse reflection plate scatters external light incident at an angle of 1 〇 to 30 degrees from the normal direction of the diffused reflection plate, and reflects the scattered light to the observer side. . The method for producing such a diffuse reflection plate includes a method of sandblasting a glass or a metal plate, a method of smoothing by a chemical liquid treatment, a method of using irregularities generated by thermal stress of a laminated film, or the like. A method of constructing a natural phenomenon. When such a method is used, it is possible to form a scattering structure which is completely randomly arranged, and the interference of the scattering structure does not occur. However, since a specific scattering structure cannot be formed with high precision, it is difficult to obtain high reflection brightness. Moreover, since the arrangement is based on natural phenomena, it lacks reproducibility and quality management is difficult. On the other hand, a case of a liquid crystal member such as a color filter is formed below the color filter. This situation is due to the production bureau, so the 1356211 is exposed in close proximity by using photolithography technology using a large-area photomask proximity exposure (collective exposure), due to the use of a large amount of large area. The mask, so in the sense of avoiding the damage or contamination of the mask, the gap (exposure gap) between the mask and the photosensitive resin (resistance (reS1St)) is usually maintained at tens to hundreds of meters. Resolution of /zm or so. The exposure gap is determined by the outer diameter of an isolated pattern disposed on the mask and the thickness of the glass substrate forming the mask and the diffusing reflector. Further, the diffuse reflection plate is preferably made into a large-area substrate by providing an isolated pattern corresponding to a desired light image in the photomask. The reticle has a pattern region composed of a light transmitting portion that completely transmits light and a shielding portion that completely blocks light, and is required to form a relatively sharp exposed image, so that smoothing is required for stably forming a diffuse reflection plate in a collective exposure. The scattering structure has a method of effectively utilizing diffraction in a photomask or a method of using light-absorbing photoresist. It is known in the prior art that diffuse reflection plates having a distribution of the distance between the apexes of the ridges or the ridges having an average width of 値30 to 90% are irregularly arranged (for example, refer to Japanese Patent No. 29 1 2 1 Bulletin 76). Further, a photomask and a diffusing reflector which are arranged in a spiral pattern by a plurality of rows are known (for example, see JP-A-2002-1421 1). SUMMARY OF THE INVENTION However, in a diffuse reflection plate in which the distribution of the distance between the apexes of the ridges or the convex portions is irregularly 30 to 90% of the average ,, the reflection brightness is large because there is no flat portion which does not contribute to scattering. low. Therefore, in order to increase the reflection brightness and improve the regularity of the uneven portion, interference fringes are generated. On the other hand, in order to suppress the irregularity of the interference fringes, for example, in the case where the pattern is arranged in a spiral shape by the array, since the spiral is 1356211, the peripheral portion of the substantially unit region and the void region remain much. Therefore, in order to produce a diffuse reflection plate having a large-area scattering structure, it is conceivable to arrange a small area unit area by adjacent to form a large area. However, in the case of the conventional pattern arrangement, since there is a void region in the boundary line of the adjacent unit region, it becomes discontinuous, and the reflection brightness is uneven. The present invention has been made in view of such problems, and an object thereof is to provide a reticle and a diffuse reflection plate which can produce a diffuse reflection plate having high reflection luminance without causing interference fringes or unevenness. In order to solve the above problems, the photomask according to the present invention has a pattern region in which a rectangular, parallelogram or hexagonal unit region in which a plurality of center points of a plurality of isolated patterns are arranged in a reverse arrangement is arranged, and is characterized in that: The total area of the plurality of Delaunay triangles formed by the center point of the unit area and the boundary line of the unit area and other unit areas adjacent to each other is the same as the area of the unit area. The Delonian triangle group is such that the average 値 of the area of the plurality of Delaunay triangles constituting the triangular group is A, and the standard deviation is B, and the center point is configured by satisfying the following conditions (1) and (2). (1) , 70 // m2S AS 120 μ m2 (2), 0.05 SB/AS 0.25. The pattern area of the photomask of the present invention is formed by repeating a unit area having a predetermined shape (rectangular, parallelogram or hexagonal shape) without a gap. The center point of the isolated pattern is configured in this unit area. The arrangement of the center points at this time is defined by the above-mentioned average 値A and standard deviation B of the Delonian triangle group (X). The Delaunay triangle group (X) is composed of a plurality of Delonian triangles (y) composed of a middle 1356211 · heart point in a unit area and a boundary line connecting other unit regions adjacent to the unit area. A plurality of Delonoid shapes are formed. Further, the 'Drone's triangle (γ) and Delauna's triangle (ζ) are set such that the sum of the total area of the Delaunay triangle (γ) and the total area of the Delaunay triangle} is the same as the area of the unit area. Therefore, the total area of the triangle of the Deloitte group (X) becomes the same as the area of the unit area, and the polygon formed by the Delaunay triangle group (χ) can be repeated without gaps in the same unit area. . The arrangement of the center points is determined by the setting of the Delaunay triangle group (X) satisfying the above conditions (1) and (2), and the center point arrangement of the pattern having no seam (boundary line) continuous in the entire pattern region can be obtained. . Here, the average of less than 70//m2 specified by the center point of the isolated pattern in the reticle is affected by the isolated pattern of the reticle, so that it is affected during the exposure, and the scattering of the diffused reflection plate cannot be stably formed. Not good. On the other hand, in the case where the average 値A is larger than 1 20 a m 2 , the scattering structure gap of the diffused reflection plate manufactured by the proximity exposure using the reticle becomes large, and the area of the flat portion which does not contribute to scattering increases, so The reflected brightness of the scattering becomes low. Moreover, the reflection of the background caused by the regular reflection is remarkable, which is not preferable. Further, since the 値 defined by the center point of the isolated pattern in the reticle is less than 0.05, the phase of the scattered light is uniform in the scattering structure of the proximity-exposed diffused reflection plate by using the reticle. It is not good because it is strong. On the one hand, when the A/B is larger than 0.25, the reflection brightness is lowered, and the light scattering performance at the time of manufacture is not stable, which is not preferable. Field and triangle jersey (Z) triangle. This is for example. According to the isolated 値A proximity structure, the variation of the A/B light interference scattering is made between 1356211. On the one hand, if a reticle having a pattern area defined by the range of the present invention is used, by using the proximity The lithography technique of the exposure can produce a diffuse reflection plate having high reflection brightness without generating interference fringes or unevenness. Further, the diffuse reflection plate according to the present invention is formed by a rectangular, parallelogram or hexagonal unit area in which a plurality of concavo-convex portions are arranged in a position alternately arranged, and is characterized by setting a center in a unit area. The sum of the multiple Delonian triangles formed by the points and the boundary line of the unit area and the other unit areas adjacent to each other is the same as the area of the unit area. , the average 値 of the area of the plurality of Delaunay triangles constituting the triangular group is A, and the standard deviation is B, and the center point is configured by satisfying the following conditions (1) and (2), (1), 7 0 # m2 SAS 1 2 0 // m2 (2) , 0.05 SB/AS 0.25. Further, the concave-convex portion is a concave portion or a convex portion such as a conical shape or a truncated cone shape. When the concave portions are arranged in each unit region, attention is paid to the separation distance between the center points of the concave portions, and the convex portions are arranged in each unit region. In this case, focus on the separation distance between the center points of the convex portions. When the predetermined average 値A is less than 70 μm 2 at the center point of the uneven portion of the diffused reflection plate, the scattering structure of the diffused reflection plate is unstable, which is not preferable. On the other hand, when the average 値A is larger than 1 20 V m2, the gap of the scattering structure of the diffused reflection plate becomes large, and the area of the flat portion which does not contribute to scattering increases, so that the reflection brightness becomes low, and further, due to the regular reflection The reflection of the background becomes significant, so it is not good. 1356211 By the case where the A/B of the predetermined point of the concave-convex portion of the diffuse reflection plate is less than 0.05, the phase of the scattered light is uniform, and the interference becomes strong, which is poor, and the aspect ratio of A/B is 0.25. In the large case, the reflection brightness due to scattering becomes low, and the change in light scattering performance is less stable, which is not preferable. On the other hand, since the diffuse reflection plate according to the present invention satisfies the above conditions, the reflection brightness is changed in a state where interference fringes or unevenness are not generated. [Embodiment] Hereinafter, a mask and a diffusing reflector according to an embodiment will be described. In addition, the same reference numerals are used for the same elements, and the repeated description is omitted. Fig. 1 is a plan view of a reticle according to an embodiment. The mask Μ has a dimension K of a diagonal of 500 mm or more. That is, the mask is used for proximity exposure. Further, the mask Μ has a pattern region PR for forming a diffusion reflection region. The pattern region PR is arranged in a matrix in the same region as the unit region R1 in which a plurality of isolated patterns Ρ1 are arranged. Further, the unit region R1 is preferably a shape which can be filled by a repeating plane of the same shape, and is not limited to a rectangular parallelepiped or a hexagon. Here, the plurality of isolated patterns Ρ1 are formed of a light transmitting portion or a light blocking portion, and the isolated pattern Ρ1 has a shape of a circle having a size of 15/zm or less, a ring shape, an ellipse shape, or a hexagonal shape corresponding to the shape. The above polygonal shape may be sufficient, and in the case of a ring shape, the width of the isolated pattern P1 is preferably 4 μm or less. The case where the outer dimension is circular or ring-shaped for the isolated pattern P 1 means the size (diameter) of the outer diameter of the -10- 1356211, and the case of the ellipse or the polygon means the position of the center of gravity which becomes the center point to the outer circumference. Double the average distance. According to this, a diffuse reflection plate having a minute uneven surface can be formed by a lithography technique using a close-contact exposure of a photomask. Fig. 2 is an explanatory view showing a pattern arrangement of a reticle according to an embodiment. In the rectangular unit area R1, light transmitting portions C1 to C9 (plurality of isolated patterns P1) are present, and have center points 11 to 19 (center point 〇 1). Further, in the unit region R2 adjacent to the unit region R1 via the boundary line Bd2, there are light-transmitting portions C21 to 29 having the center points 2 1 to 29, which are arranged in the same manner as the unit region R 1 . Further, in the unit region R 3 adjacent to the unit region R1 via the boundary line Bd3, the light transmitting portions C31 to 39 having the center points 31 to 39 are also arranged in the same arrangement as the unit region R1. Here, a plurality of Delaunay triangles (Y) formed by the center points 11 to 19 in the unit region R1 and a boundary line 8 between the unit area R 1 and the other unit area rule 2' 113 adjacent to each other (12, 8 (13) The sum of the areas of the plurality of Delauna triangles (Z) composed of the center points 13, 16, 19, 21 to 23, 31' 34, 37 is the same as the area of the unit area R1. The Delonian triangles (Y) and (Z) are set to the Delaunay triangle group (X) (the oblique line in the figure). The area of the complex Delauna triangles that make up this Delaunay triangle group (X) The average 値 is A, and the standard deviation is B. The center point 0 1 is configured to satisfy the following conditions (1) and (2). (1) '70/z m2^ \2Q μ. m2 (2) 0·05 S Β/Α S 0.25. The 1356211 unit areas in the pattern area formed by the unit area having such a pattern are continuous without seams. Therefore, if the mask according to the embodiment is used, By using lithography technology of proximity exposure, it is possible to produce a diffusion with high reflection brightness without generating interference fringes or unevenness. Further, the arrangement of the center point 0 1 of the isolated pattern P1 is determined as follows. Here, when several points are arranged on the plane, the point in the plane is divided by the closest point. (Voronoi diagram), the divided area is called the Funno area. The triangle formed by connecting the mother points of the adjacent Fu Nuo area to each other is a Delaunay triangle, which can be used as a display point. First, the number N of the center points 01 of the isolated patterns P1 existing in the unit area R1 is determined, and X, y is used as a random number N coordinates U, y) by the computer. Determine the coordinate configuration center point 01 (random configuration (1)). For example, if the coordinates of the lower left corner of the rectangular unit area are the origin (0, 0), let the origin of the rectangle on the diagonal of the rectangle be on the upper right side of the rectangle. If the coordinates of the angle are (Xmax, Ymax), then Xmax is, for example, 132, and YMAX is, for example, 396. Let the random number X selected from 0 to 132 and the random number y selected from 0 to 396 be a coordinate. By making this random number N times, N coordinates (x, y) can be obtained. The upper N is, for example, 63. In addition, the interval between the coordinates (0, 0) and the coordinates (〇, 1) is set to 0.5 // m on the reticle. In this case, the shape of the unit area R 1 becomes the side 66 " a rectangle of mx 198/zm. The unit area R1 is arranged in a matrix, for example, next to each other. Next, a Delaunay triangle is obtained in the above-described Delaunay triangle group (X) of the random configuration (1) thus obtained. The average 値A of the area and the standard deviation B of the area distribution. If the area S of each triangle is adjacent to the three -12- 1356211, the coordinates of the center point 〇1 are (a, b), (c, d), ( e, f), as shown below. S=(ad+cf+eb-bc-de-fa)/2 where the Delaunay triangle with a larger area than A + B moves the center point 01 in the direction of reduction, and the Delaunay triangle with smaller area than AB is expanding The direction of the movement moves to the center point 0 1. The details are as follows.
—個德洛內三角形係以接鄰的三個中心點〇1當作頂 點而構成，令德洛內三角形群（X)的三角形數目爲K個。比 較德洛內三角形的面積的平均値A與第k個（k=l~K)德洛內 三角形的面積S(k)的差分△(△rSOO-A)的絕對値丨ΔΙ和標 準偏差B，特定具有比標準偏差B還大的面積之德洛內三 角形的號碼。所特定的德洛內三角形因由三個中心點〇 1 構成，故例如如以下使其中的一個中心點01的座標移動。A Delaunay triangle is formed by arranging three adjacent center points 〇1 as the apex, and the number of triangles of the Delaunay triangle group (X) is K. Comparing the absolute 値丨ΔΙ and the standard deviation B of the difference Δ(ΔrSOO-A) between the average 値A of the area of the Delaunay triangle and the area S(k) of the kth (k=l~K) Delaunay triangle A number of a Delauna triangle having an area larger than the standard deviation B. The specific Delauna triangle is composed of three center points 〇 1, so that, for example, the coordinates of one of the center points 01 are moved as follows.
選擇構成所特定的三角形之三個中心點之中與不包含 於此三角形的接鄰的中心點之距離爲最短的中心點01，移 動該座標（X，y)到座標（x+1，y)，再計算對應前述平均値A、 面積 S(k)的移動後的平均値 A’與德洛內三角形的面積 5(1)，計算該差分^’（6’=5(1〇^’）的絕對値丨^’丨。對於1 △ Ί<ΙΔ丨的情形移動中心點01到座標（x+1, y)，對於ΙΔ ’丨>丨 △丨的情形移動到座標（x-1, y)。丨△ ’丨=丨△丨的情形不移動。同 樣地進行y座標的移動。據此，製作隨機配置（2)。 對所有被特定的德洛內三角形進行此移動操作，重複 到平均値A、標準偏差B滿足上述（1)以及（2)的條件爲止， 確定中心點01的座標 '例如移動操作的次數爲數次。據 此，孤立圖案P1的中心點0 1的排列被決定。即依次實行 以下的順序。 -13- 1356211 (i) 、在K個德洛內三角形群中算出三角形的面積的平 均値Α以及標準偏差Β。 (ii) 、算出第k個（k=l〜K)德洛內三角形的面積S(k)。 (iii) 、算出S(k)與A的差分△(△=$(]〇-△)的絕對値ΙΔ I » (iv) 、特定ΙΔΙ>Β的德洛內三角形的號碼。 (V)、由所特定的德洛內三角形選擇一個三角形，選擇 三角形的三個中心點之中與不包含於此三角形的接鄰的中 心點之距離爲最短的中心點。 (Vi)、移動所選擇的中心點的座標（X，y)到座標（χ+1， y)。 (vii)、計算移動後的平均値A’與德洛內三角形的面積 S(k’）的差分△’（△’= S(k’）-A，）的絕對値丨△ Ί。 (v i i i)'對於丨△ ’丨< I △ I的情形移動中心點〇 1到座標（x + 1， y)，對於丨△ Ί>ΙΔ丨的情形移動到座標（x-1，y)，對於丨△，丨=丨 △丨的情形不移動。 (ix)'再度特定丨ΔΙ>Β的德洛內三角形的號碼。 (X)、由所特定的德洛內三角形選擇一個三角形，選擇 三角形的三個中心點之中與不包含於此三角形的接鄰的中 心點之距離爲最短的中心點。 (X i )、移動所選擇的中心點的座標（X，y )到座標（X， y + 1) 〇 (xii)、計算移動後的平均値A’’與德洛內三角形的面積 S (k’’）的差分 Δ S(k’’）-A’’）的絕對値丨△ ’，|。Selecting the distance between the three center points constituting the specified triangle and the center point of the neighboring point not including the triangle as the shortest center point 01, and moving the coordinate (X, y) to the coordinates (x+1, y Then, calculate the moving average 値A' and the area of the Delaunay triangle corresponding to the aforementioned average 値A, area S(k), and calculate the difference ^'(6'=5(1〇^' Absolute 値丨^'丨. For the case of 1 △ Ί < ΙΔ丨, move the center point 01 to the coordinate (x+1, y), and move to the coordinate (x-1) for the case of ΙΔ '丨>丨△丨, y). 丨 △ '丨 = 丨 △ 丨 does not move. Similarly, the movement of the y coordinate is performed. Accordingly, a random configuration (2) is made. This movement operation is repeated for all the specific Delauna triangles. Until the average 値A and the standard deviation B satisfy the conditions (1) and (2) above, the coordinates of the center point 01 are determined, for example, the number of times of the movement operation is several times. Accordingly, the arrangement of the center point 0 1 of the isolated pattern P1 is performed. It is decided that the following order is carried out in order. -13- 1356211 (i) Calculating the triangle in the K Delonian triangle group The average 値Α of the area and the standard deviation Β. (ii) Calculate the area S(k) of the kth (k=l~K) Delaunay triangle. (iii) Calculate the difference between S(k) and A. (Δ=$(]〇-△) absolute 値ΙΔ I » (iv), the specific ΙΔΙ>Β The number of the Delauna triangle. (V), select a triangle from the specified Delaunay triangle, select the triangle The distance between the three center points of the three center points and the center point not adjacent to the triangle is the shortest center point. (Vi), move the coordinates (X, y) of the selected center point to the coordinates (χ+1) , y) (vii), calculate the absolute 値丨 Δ of the difference Δ' (Δ' = S(k')-A,) between the average 値A' after the movement and the area S(k') of the Delaunay triangle (viii) 'For the case of 丨△ '丨< I △ I, move the center point 〇1 to the coordinate (x + 1, y), and move to the coordinate (x-1 for the case of 丨△ Ί> ΙΔ丨y), for 丨△, 丨=丨△丨 does not move. (ix) 'Re-specify 丨ΔΙ> 号码Drone's triangle number. (X), select a triangle from the specified Delaunay triangle ,select The distance between the three center points of the triangle and the center point of the adjacent triangle is the shortest center point. (X i ), the coordinates (X, y) of the selected center point are moved to the coordinates (X , y + 1) 〇(xii), the absolute 値丨 of the difference Δ S(k'')-A'') of the average 値A'' after the movement and the area S (k'') of the Delaunay triangle △ ',|.
Uiii)、對於I △，’1<1 △ Ί的情形移動中心點〇1到座標（X， -14- 1356211 y+l)，對於丨△’丨的情形移動到座標（x, y-l)，對於I △，’ Μ △’丨的情形不移動" (xiv)、對所有被特定的德洛內三角形實行（v)~(xiii)， 重複到最終的平均値A、標準偏差B滿足上述（1)以及（2) 的條#爲止。此外，A ’、A ’’係顯示演算次數爲第二次、第 三次的平均値A，在上述中爲了明確化起見A使用A ’以及 A’’。 使上述過程在電腦實行，配置孤立圖案使孤立圖案的 重心與所決定的中心點一致。 第3圖是與實施形態有關的擴散反射板的圖案配置的 說明圖。此擴散反射板具備藉由上述光罩Μ形成有圖案的 光阻，而對於光阻的種類有感光部分對顯影液爲不溶性的 負型與可溶性的正型。此情形凹凸部D1係凹部或凸部，依 照光阻爲負型或正型其形狀不同。即使可考慮以下的（1)〜（4) 的情形。 (1 )、使用孤立圖案爲光透射部，正型光阻的情形，面 對孤立圖案的位置的光阻溶解，在面對光透射部的位置形 成有凹部。 (2) 、使用孤立圖案爲遮光部，負型光阻的情形，面對 孤立圖案的周邊部的位置的光阻溶解，在面對遮光部的位 置形成有凸部。 (3) 、使用孤立圖案爲光透射部，負型光阻的情形，面 對孤立圖案的周邊部的位置的光阻溶解，在面對光透射部 的位置形成有凸部。 (4) 、使用孤立圖案爲遮光部，負型光阻的情形.，面對 -15- 1356211 凹凸層2係由感光性樹脂等的有機材料構成，例如可 使用漆用酣醒樹脂（novolac resin)系、（甲基）丙烧樹脂系正 型光阻。更佳爲可使用添加炭黑（carbon black)或色素，對 曝光光賦予吸光性的正型光阻。感光性樹脂係具有在曝光 製程、顯影製程後的加熱製程硬化的性質。 對於形成光散射層於彩色濾光片基板而使用的情形係 在光散射層上配設有著色樹脂區域4R、4G、4B。在著色樹 脂區域4R、4G、4B上依照需要配設有透明保護膜6，形成 有驅動液晶用的透明電極5。透明電極5例如可使用IT 0 (銦 錫氧化物）等。 此外’著色樹脂區域4R、4G、4B若不洗脫在液晶中成 爲顯示不良原因的雜質，則任何材質都可以。具體的材質 有僅透射任意光而控制膜厚的無機膜，或染色、分散染料 或分散顏料的樹脂等。 對於此樹脂的種類雖然無特別限制，但可使用丙烯、 聚乙嫌醇、聚醯亞胺等。此外，由製程的簡便性或耐氣候 性等的面，對於著色樹脂區域4R、4G、4B使用分散顏料 的樹脂膜較佳。 而且，對於以光散射層作爲元件基板使用的情形，也 能在光散射層上形成配線或驅動元件。 第5A圖、第5B圖、第5C圖、第5D圖、第5E圖是 第4圖所示的彩色濾光片的製造方法的說明圖。製程（a) ~ 製程（e)係依次被實行。 [塗佈製程（a)] 在透明基板1上塗佈正型光阻（感光性樹脂），形成光 -17- 1356211 阻層（凹凸層2的中間體）2(第5A圖）。 [曝光製程（b)] 經由光罩Μ進行總括曝光（近接式曝光）（第5B圖）。其 中，在光罩Μ中複數個孤立圖案Ρ1的中心點01係以第2 圖說明的排列配置。藉由使用此光罩Μ的曝光在光阻內形 成有潛像濃度分布2a。再者，孤立圖案Ρ1的外形尺寸D 爲15//m以下較佳。 [顯影、熱處理製程（c)] 藉由進行光阻的顯影以形成圖案（第5C圖）。顯影若選 定適合光阻的條件的話佳，以鈉或鉀的氫氧化物、碳酸鹽、 碳酸氫鹽這種無機鹼、有機銨等的有機鹼的溶液作爲顯影 液使用。顯影係藉由在20 °C至40 °C的浸漬或噴淋顯影液來 進行。顯影後的基板在以純水充分洗淨後進行熱處理。 在熱處理製程中光阻的圖案被加熱硬化，形成有平滑 的凹凸部。熱處理溫度較佳爲120~ 25 0°C，更佳爲150〜230 °C的範圍。而且，熱處理時間以1〇~60分較佳。 [反射膜形成製程（d)] 形成包含金屬膜的反射膜3(第5D圖）。對於此形成可 使用蒸鍍法或濺鍍法。構成反射膜3的材料以純鋁、鋁合 金（Al-Nd合金等）或銀合金（Ag-Pd-Cu合金）等較佳。反射膜 3的厚度爲0.1~0.3/zm的範圍較佳，更佳爲0.15〜〇.25//m 的範圍。反射膜3可使用介電質多層膜。 而且’對於反射膜3包含金屬膜的情形可達成高反射 率。此金屬膜包含金屬鋁、鋁合金或銀合金較佳，惟當然 包含不給$特性不良影響的其他元素也可以，反射膜3係 -18- 1356211 依照需要藉由蝕刻等除去不要部分，形成光透射部或標識 類。 依照需要形成紅 '綠、藍的著色層4R、4G、4B，接著 沉積透明保護膜6以及透明電極5於形成物之上，完成附 擴散反射板的彩色濾光片（第5E圖）。 (實施例） 以下’藉由實施例說明本發明，但本發明並非僅限定 於以下的實施例。 (實驗條件） (實施例1) 在構成光罩的圖案區域之長方形的單位區域（66a mx 1 9 8 y m)內，以預定的排列配置外徑9 " m的圓形光透射部 的中心點（7 3個）。此排列係藉由使用亂數的上述手法決 定。在得到的排列中藉由德洛內三角形群（X)規定的平均値 A爲90以m2，B/A的値爲0.2。以藉由使用此光罩的近接式 曝光之微影技術製造附擴散反射板的彩色濾光片。此外， 光罩上的單位區域以及光透射部係對應彩色濾光片的單位 像素以及凹凸部。 首先，以l.lym的膜厚在洗淨的370X470X0.7mm的 玻璃基板（Coi:ningl737)塗佈添加炭黑的吸光性光阻（透射 係數（transmission factor)0_2/Aim)。在熱板（hot plate)上對 所得到的光阻膜進行10(TC x 110秒鐘的預烘烤（pre-bake) 後，隔著上述光罩以曝光間隙130//m、曝光量300m〗/cm2 的條件進行曝光。 曝光後的基板係使用〇.5%KOH溶液以23°C、80秒的條 -19- 1356211 件進行顯影後，在無塵烤箱（clean〇ven)中熱處理200°CX20 分鐘。 在所得到的基板表面形成有凹凸部，另一方面，在周 邊部中不要的光阻完全被剝離除去，使彩色濾光片或 TFT、TFD等的元件基板的形成爲可能的狀態。 對製作的加熱處理後的基板藉由濺鍍以0.2 的厚度 形成鋁合金（Al-Nd合金）反射膜，當作擴散反射板》 由所得到的擴散反射板切出具有5 X 5cm2的面積的一 部分，隔著甘油貼合5x5cm2的玻璃基板（Corningl737)，當 作光散射性能評價用模型胞（model cell)。 水洗所製作的擴散反射板，使用旋轉塗佈機（spin coater)塗佈感光性紅色光阻CR-8960(FUJIFILM Arch公司 製）。預烘烤後，隔著具有條紋狀的光透射部之光罩曝光 後，使用無機鹼水溶液顯影，水洗之後在無塵烤箱中進行 2 00 °C X 20分鐘的熱處理，製作條紋狀的紅色透明樹脂圖案 (厚度1.0仁m)。 再者，藉由重複在此基板分別同樣地塗佈感光性綠色 光阻 CG-8960(FUJIFILM Arch公司製）、感光性藍色光阻 CB- 8 960(FUJIFILM Arch公司製），曝光、顯影、熱處理， 製作紅色、綠色、藍色的透明樹脂圖案的排列。 藉由在形成透明樹脂圖案的基板上塗佈NN-525 (JSR公 司製）作爲保護膜材料，曝光、顯影、熱處理，形成厚度2.0 的透明保護膜層，當作彩色濾光片。 (實施例2)〜（實施例5) 製作在滿足上述（1)以及（2)的條件之範圍內使長方形 -20-Uiii), for I △, the case of '1<1 △ 移动 moves the center point 〇1 to the coordinate (X, -14- 1356211 y+l), and moves to the coordinate (x, yl) for the case of 丨△'丨, For I △, ' Μ △ '丨 does not move " (xiv), for all the specific Delauna triangles (v) ~ (xiii), repeat to the final average 値 A, standard deviation B meets the above (1) and (2) Article # so far. Further, A ', A '' shows that the number of calculations is the second and third average 値A, and in the above, A' and A'' are used for clarification. The above process is carried out on a computer, and an isolated pattern is arranged so that the center of gravity of the isolated pattern coincides with the determined center point. Fig. 3 is an explanatory view showing a pattern arrangement of a diffuse reflection plate according to an embodiment. The diffuse reflection plate is provided with a photoresist having a pattern formed by the mask ,, and the type of the photoresist is a negative type and a soluble positive type in which the photosensitive portion is insoluble to the developer. In this case, the concave-convex portion D1 is a concave portion or a convex portion, and the shape is different depending on whether the photoresist is negative or positive. Even the following cases (1) to (4) can be considered. (1) When the isolated pattern is the light transmitting portion or the positive resist, the photoresist at the position of the isolated pattern is dissolved, and a concave portion is formed at a position facing the light transmitting portion. (2) When the isolated pattern is the light-shielding portion or the negative-type photoresist, the photoresist at the position facing the peripheral portion of the isolated pattern is dissolved, and a convex portion is formed at a position facing the light-shielding portion. (3) When the isolated pattern is the light transmitting portion or the negative resist, the photoresist at the position of the peripheral portion of the isolated pattern is dissolved, and a convex portion is formed at a position facing the light transmitting portion. (4) In the case where the isolated pattern is used as the light-shielding portion and the negative-type photoresist is used, the surface of the uneven layer 2 is composed of an organic material such as a photosensitive resin, for example, a varnish resin (novolac resin) can be used. ), (meth) propylene resin is a positive photoresist. More preferably, a positive photoresist which imparts light absorption to the exposure light by using carbon black or a pigment may be used. The photosensitive resin has a property of being hardened by a heating process after an exposure process or a development process. In the case where the light-scattering layer is formed on the color filter substrate, the colored resin regions 4R, 4G, and 4B are disposed on the light-scattering layer. A transparent protective film 6 is disposed on the colored resin regions 4R, 4G, and 4B as needed, and a transparent electrode 5 for driving the liquid crystal is formed. As the transparent electrode 5, for example, IT 0 (indium tin oxide) or the like can be used. Further, any of the materials may be used if the colored resin regions 4R, 4G, and 4B do not elute impurities which cause deterioration in the liquid crystal. Specific materials include inorganic films that transmit only a small amount of light and control the film thickness, or resins that dye, disperse, or disperse pigments. The type of the resin is not particularly limited, but propylene, polyethylidene alcohol, polyimine or the like can be used. Further, it is preferable to use a resin film of a dispersed pigment for the colored resin regions 4R, 4G, and 4B from the surface of the process, such as simplicity of the process or weather resistance. Further, in the case where the light scattering layer is used as the element substrate, wiring or a driving element can be formed on the light scattering layer. 5A, 5B, 5C, 5D, and 5E are explanatory views of a method of manufacturing the color filter shown in Fig. 4. Process (a) ~ Process (e) are implemented in sequence. [Coating Process (a)] A positive resist (photosensitive resin) is applied onto the transparent substrate 1 to form a resist layer (intermediate body of the uneven layer 2) 2 (Fig. 5A) of the light -17-1356211. [Exposure Process (b)] Total exposure (close-up exposure) via mask Μ (Fig. 5B). Among them, the center point 01 of the plurality of isolated patterns Ρ1 in the mask 系 is arranged in the arrangement illustrated in Fig. 2 . The latent image density distribution 2a is formed in the photoresist by exposure using the mask. Further, the outer shape D of the isolated pattern Ρ1 is preferably 15/m or less. [Development, Heat Treatment Process (c)] A pattern is formed by performing development of a photoresist (Fig. 5C). For the development, if a condition suitable for the photoresist is selected, a solution of an inorganic base such as an inorganic base such as sodium or potassium hydroxide, a carbonate or a hydrogencarbonate or an organic ammonium is used as the developing solution. The development is carried out by dipping or spraying a developing solution at 20 ° C to 40 ° C. The developed substrate is subjected to heat treatment after being sufficiently washed with pure water. The pattern of the photoresist is heat-hardened in the heat treatment process to form a smooth uneven portion. The heat treatment temperature is preferably from 120 to 25 ° C, more preferably from 150 to 230 ° C. Further, the heat treatment time is preferably from 1 〇 to 60 minutes. [Reflective Film Forming Process (d)] A reflecting film 3 including a metal film is formed (Fig. 5D). For this formation, an evaporation method or a sputtering method can be used. The material constituting the reflective film 3 is preferably pure aluminum, aluminum alloy (Al-Nd alloy or the like) or silver alloy (Ag-Pd-Cu alloy). The thickness of the reflective film 3 is preferably in the range of 0.1 to 0.3 / zm, more preferably in the range of 0.15 to 〇.25 / / m. As the reflective film 3, a dielectric multilayer film can be used. Further, a high reflectance can be achieved in the case where the reflective film 3 contains a metal film. It is preferable that the metal film contains a metal aluminum, an aluminum alloy or a silver alloy, but of course, other elements which do not adversely affect the characteristics may be included, and the reflective film 3 is -18- 1356211, and unnecessary portions are removed by etching or the like as needed to form light. Transmissive part or identification class. A red 'green, blue coloring layer 4R, 4G, 4B is formed as needed, and then a transparent protective film 6 and a transparent electrode 5 are deposited on the formation to complete a color filter with a diffusing reflection plate (Fig. 5E). (Embodiment) Hereinafter, the present invention will be described by way of examples, but the invention is not limited to the following examples. (Experimental Conditions) (Example 1) The center of the circular light transmitting portion of the outer diameter 9 " m was arranged in a predetermined arrangement in a rectangular unit area (66 a mx 1 9 8 ym) constituting the pattern region of the mask. Points (7 3). This arrangement is determined by the above method using random numbers. In the resulting arrangement, the average 値 A specified by the Delaunay triangle group (X) is 90 m2, and the B of B/A is 0.2. A color filter with a diffused reflector is fabricated by a lithography technique using a proximity exposure of the mask. Further, the unit area and the light transmitting portion on the photomask correspond to the unit pixel and the uneven portion of the color filter. First, a light-absorbing photoresist (transmission factor 0_2/Aim) to which carbon black was added was applied to a washed 370X470X0.7 mm glass substrate (Coi: ningl737) with a film thickness of l.lym. After the obtained photoresist film was subjected to 10 (TC x 110 second pre-bake) on a hot plate, the exposure gap was 130//m and the exposure amount was 300 m. Exposure was carried out under the conditions of /cm2. The exposed substrate was developed by using a 5%.5% KOH solution at 23 ° C for 80 seconds, and then heat-treated in a clean oven. °CX20 minutes. The uneven surface is formed on the surface of the obtained substrate. On the other hand, unnecessary photoresist in the peripheral portion is completely removed and removed, and formation of a color filter, an element substrate such as TFT or TFD is possible. A heat-treated substrate was formed by sputtering to form an aluminum alloy (Al-Nd alloy) reflective film at a thickness of 0.2, and was used as a diffuse reflection plate. The obtained diffused reflection plate was cut out to have a size of 5 X 5 cm 2 . A part of the area was bonded to a glass substrate (Corningl 737) of 5×5 cm 2 via glycerin, and used as a model cell for evaluating light scattering performance. The diffused reflection plate produced by washing was coated with a spin coater. Photosensitive red photoresist CR-8960 (FUJIFILM Arch) After prebaking, it is exposed through a reticle with a stripe-shaped light transmitting portion, developed with an aqueous solution of an inorganic alkali, washed with water, and then subjected to heat treatment at 200 ° C for 20 minutes in a dust-free oven to produce a stripe-like shape. Red transparent resin pattern (thickness: 1.0 Å). Further, a photosensitive green photoresist CG-8960 (manufactured by FUJIFILM Arch Co., Ltd.) and a photosensitive blue photoresist CB-8 960 (the same) were applied to the substrate. Manufactured by FUJIFILM Arch Co., Ltd., by exposure, development, and heat treatment, an arrangement of red, green, and blue transparent resin patterns is formed. NN-525 (manufactured by JSR Corporation) is applied as a protective film material on a substrate on which a transparent resin pattern is formed. Exposure, development, and heat treatment to form a transparent protective film layer having a thickness of 2.0 as a color filter. (Example 2) to (Example 5) The production is within the range satisfying the conditions (1) and (2) above. Make a rectangle -20-