TWI353652B - Integrated circuit and method for fabricating the - Google Patents

Description

1353652 IX. Description of the Invention: TECHNICAL FIELD OF THE INVENTION The present invention relates to a structure and a process thereof, and more particularly to an integrated circuit structure and a process thereof. [Prior Art] A method for improving the performance of a semiconductor element is generally to reduce the cost per unit die by reducing the geometry of the integrated circuit, and at the same time improving the performance of some aspects of the semiconductor device. Metal connection between the integrated circuit and other circuits or between the integrated circuit and the system components becomes relatively important, and with the miniaturization of the integrated circuit, the negative impact on the line performance It also increases. When the parasitic capacitance and resistance of the metal interconnects increase, it will mean a decrease in the performance of the cymbal. Among them, the most concern is the voltage drop between the power bus and the ground bus, and the RC delay of the critical signal path. In order to solve this problem, a low-resistance metal (e.g., copper) is used as a wire, and a low-k dielectric material is used between the signal lines. From the point of view of the metal history of the integrated circuit (1C), the sputtered aluminum has become the main stream of jc-connected metal materials since the 1960s. The thin film aluminum covers the entire wafer by sputtering, and then the aluminum metal is patterned by a yellow lithography process and a dry etching or wet etching process. In terms of cost and sputtering stress considerations, it is difficult and costly to fabricate aluminum metal line technology with thicknesses in excess of 2 microns. In about 1995, Damascene became another metal that could be used to connect. In the case of Damascene steel, after the insulating layer is patterned, a copper layer can be formed by electroplating and the copper layer outside the opening of the insulating layer can be removed by chemical mechanical polishing (CN1p) to connect the copper metal The wire is formed in the opening of the insulating layer. Plating thick metal on the entire wafer causes large stresses, and the thickness of the damascene copper is usually determined by the thickness of the insulating layer. Therefore, the insulating layer is generally oxidized by chemical vapor deposition (CVD). Because of the stress and cost considerations, it is impossible to provide too thick thickness, that is, to form a copper metal wire having a thickness of more than 2 micrometers, which is technically difficult and expensive. SUMMARY OF THE INVENTION An object of the present invention is to provide an integrated circuit structure and a process thereof which can improve the performance of an integrated circuit. It is an object of the present invention to provide an integrated circuit structure and a process thereof for forming a coarse metal interconnection scheme under a passivation layer in a fine metal metal structure (fine line metal) Above the ground, for the above purposes, the present invention provides an integrated circuit structure comprising a semiconductor substrate; a metal line over the semiconductor substrate, and the thickness of the metal line is between 5 microns and 27 microns 'Between; 苡 and - 21 protective layer, including a silicon nitride layer on the gold line and above the semiconductor substrate, and a bismuth-compound (silicon - *** ~*~ One - - • • • oxide) The layer is on the layer of the ruthenium compound. ...1353532 For the above purposes, the present invention provides an integrated circuit structure comprising a semiconductor substrate; a metal line positioned above the semiconductor substrate, and the metal line having a thickness between 5 microns and 27 microns And a layer of silicon oxynitride on the metal line and the semiconductor substrate, and a silicon 0Xide layer on the layer of the oxynitride compound. For the above purposes, the present invention provides a method of fabricating an integrated circuit structure, the method comprising: forming a first metal layer over a semiconductor substrate; forming a first photoresist layer on the first metal layer, and a first photoresist layer opening in the first photoresist layer exposes the first metal layer; and a second metal layer having a thickness between 5 micrometers and 25 micrometers is exposed in the opening of the first photoresist layer Extracting the first metal layer; removing the first photoresist layer; removing the first metal layer not under the second metal layer; forming a nitrogen compound layer on the second metal layer and the semiconductor substrate Upper; and forming an oxonium compound layer on the yttrium compound layer. For the above purposes, the present invention provides a method of fabricating an integrated circuit structure, wherein (4) includes forming a "metal-semiconductor" side; forming a germanium resist layer on the first metal layer and at the first photoresist One of the first photoresist layer openings in the layer exposes the second θ having a first thickness between 5 μm and 25 μm, and the first __metal layer/layer exposed by the opening of the resist layer is in the first a light layer; removing the first photoresist film under the second metal layer on the second metal layer and the semiconductor:: a J-band total oxime compound 漘4--two </ RTI> <RTI ID=0.0># </ RTI> </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; The structures and methods are all constructed over a semiconductor substrate or over a semiconductor wafer. Here, the term "upper" in the present invention means that it is located above and in contact with something, or that it is located above or not in contact with something. Referring to Fig. 1, a semiconductor substrate 2 includes a plurality of semiconductor devices 4, a wiring structure 6, and a plurality of dielectric layers 8. The semiconductor substrate 2, the semiconductor device 4, the wiring structure 6, and the dielectric layer 8 will be described below, and then the embodiment will be described. A semiconductor substrate 2 such as a germanium (Si) substrate or gallium arsenide (GaAs) is used. a germanium or germanium germanium (SiGe) substrate, and the semiconductor substrate 2 may also be a semiconductor wafer, and the semiconductor wafer is, for example, a silicon wafer, a gallium arsenide wafer or a germanium wafer. The semiconductor element 4 is located in or above the semiconductor substrate 2. The semiconductor component 4 includes a passive component (such as a resistor, a capacitor or an inductor) or an active component, and the active component is, for example, a metal oxide semiconductor (MOS) component, such as a p-channel-metal oxide semiconductor (p). -channel MOS) component, n-channel MOS device, bi-carrier complementary metal-oxide semiconductor (BiCMOS) device, _bi-carrier connected transistor (Bipolar Junction.Tr to nsistor 'BJT) II Two _~1·7 ---, - . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . A line structure 6 is located above the semiconductor substrate 2. The line structure 6 may be composed of a plurality of metal layers 1 (having a thickness of, for example, less than 3 μm) and a plurality of metal plugs 12, wherein the metal layers are formed. 1〇 and the metal plug 12 is made of copper, or the metal layer is made of aluminum or aluminum alloy, and the metal plug 12 is made of tungsten. In addition, the manner of forming the metal layer .10 includes a damascene process, an electroplating process, or a sputtering process, such as forming a copper layer as a metal layer 10 by inlaying, or sputtering. The process forms aluminum or an aluminum alloy as the metal layer 10. For example, in the case of a damascene process, the metal layer 10 is formed by first depositing an inorganic protective layer on the upper surface of a dielectric layer 8 by means of chemical vapor deposition (CVD). The material of the inorganic protective layer is selected from the group consisting of a nitrogen ruthenium compound, a oxynitride compound or a carbon ruthenium compound, and then a photoresist layer is formed on the inorganic protective layer, and the inorganic protective layer is etched by using the photoresist layer opening in the photoresist layer. Forming an opening composed of a trench and a via hole with the dielectric layer 8, and then depositing a barrier layer on the lower surface of the opening and the sidewall and the inorganic protective layer by means of a spatter or chemical vapor deposition On the surface, the material of the barrier layer is selected from the group consisting of a button (Ta), a nitride button (TaN), cobalt (Co), nickel (Ni), tungsten (W), tantalum nitride, and sharp (ΝΪ>). One of aluminum silicate, titanium oxide (TilvJ), and titanium nitride (TiSiN), or an alloy formed from the above materials; again using sputtering or chemical vapor deposition Way to deposit a layer - '◊....··^^ The seed layer of the history ^ steel material is in the barrier 扈丄 'Continue electricity: Han Yi: Resignation of gold - belongs to the second -: two. · · &lt;·Ι I |· I-III M • 一···*·· -·· ~ .·. _ Factory.1 —* ·· · . . . ^ ^ _ ' _ i 1353652 Seed 曰 after taking and chemical mechanical polishing (Chemical Mechanical

The PoHsh, CMP) removes the copper metal, seed layer and barrier layer outside the opening until the upper surface of the inorganic protective layer is exposed. The barrier layer, the seed layer and the copper metal formed in the trench in this manner are the metal layer 1' and the 15 metal layers 10 can pass through the metal plug 12 in the via hole to communicate between the adjacent two layers. The metal layer 1 is connected to the semiconductor device 4, and the metal layer 10 is formed by sputtering an aluminum alloy layer (including 90 wt% or more of aluminum and 1 wt% or less of copper) by a sputtering process. The aluminum alloy layer is patterned on a dielectric layer 8 by a photolithography process. a plurality of dielectric layers 8 (having a thickness of, for example, less than 3 micrometers) are positioned above the semiconductor substrate 2 and the metal layer 1 is positioned between the dielectric layers 8 and is transmissive in the dielectric layers 8 The metal plug 12 connects the adjacent two layers of the metal layer 10. The dielectric layer 8 is generally formed by chemical vapor deposition (CVD), and the dielectric layer 8 is, for example, an oxonium compound (for example, SiO 2 ), an oxide of tetraethoxy decane (TEOS), or Carbon, oxygen and hydrogen compounds (for example SiwCxOyHz), nitrogen bismuth compounds (such as Si3N4), Fluorinated Silicate Glass (FSG), Black Diamond film, Silk. Printed layer (SiLK), multi-turn L-oxidative dream (porous silicon 0\heart 6), oxynitride compound, polyaryl vinegar (卩〇]^716. limbs::66 61*), poly---benzene 0 evil ° sit 〇1&gt;^61120\&2〇16,? 30), dielectric constant. Value (1 &lt;;) between 1.5 and 3 materials or formed by spin coating. Glass (Spin-On Glass, SOG; Chinese can also be translated as spin-on glass) . _ . - _ - - _ - · _ - . - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - The line structure 6 is explained in relation to the dielectric layer 8 and the like, and then the embodiment is explained. Referring to FIG. 2A, a metal containing a germanium dielectric layer 14 over the wiring structure 6 and above the dielectric layer 8 and having at least one opening 14a in the germanium containing dielectric layer 14 exposes the wiring structure 6. Layer 1〇. The germanium-containing dielectric layer 14 is, for example, a silic〇n nitride layer or a silicon oxynitride layer, and the germanium-containing dielectric layer 14 has a thickness of, for example, 0.1 micron ( Ιιη) to between 05 microns. Therefore, the germanium-containing dielectric layer 14 may be a layer of a ruthenium nitride compound having a thickness between 〇. 丨 micrometer and 〇 5 micrometers, and the opening 14a exposes a metal layer 1 made of copper; or The layer 14 may be a layer of oxynitride compound having a thickness between 〇1 μm and 〇5 μm, and the opening 14a exposes the metal layer 10 made of copper; or the germanium-containing dielectric layer 14 may have a thickness between a layer of a ruthenium nitride compound between 〇丨 micrometers and 0.5 micrometers, and the opening 14a exposes a metal layer 10 made of aluminum; or the dielectric layer 14 containing ruthenium may have a thickness of between 0.1 micrometers and 0.5 micrometers. A layer of oxynitride compound, and the opening 14 is madly exposed to a metal layer of material including aluminum. In addition, the manner of forming the germanium-containing dielectric layer 14 is, for example, using an electrically enhanced chemical vapor deposition (corrosive coffee).

Enhanced Chemical Vapor Deposition (PECVD) formation. In addition, the manner of forming at least one opening 14a in the germanium-containing dielectric layer 14 is as follows. First, referring to FIG. 2B, a photoresist layer 15 is formed on the germanium-containing dielectric layer 14 and exposed through exposure. The developing process or the like patterning the photoresist layer 15 to form at least one photoresist layer opening 15a in the photoresist layer 15 and exposing the photoresist layer 15 to form the photoresist layer 15 is, for example,

—二:· 1 . ':.···一:._ ----~一-•一, :二一:一,二-J 1353652 Formed by spin coating process or pressed (laminati〇n) process formation, and in the process of patterning the photoresist layer 15, for example, using a double (stepper) exposure machine or using double (1 magic alignment machine (contact) Exposure is performed. Next, as shown in FIG. 2C, the germanium-containing dielectric layer 14 exposed by the photoresist layer opening 15a is removed to form the opening 14a in the germanium-containing dielectric layer 14 and expose the metal layer 1 The manner of removing the germanium-containing dielectric layer 14 exposed by the photoresist layer opening 15a is, for example, removed by etching, and is exposed by dry etching to remove the photoresist layer opening 15a. The + dielectric layer 14 is preferably a preferred method 'for example, using a reactive ion etch (RIE) process to remove the photoresist layer 14 &amp; exposed to the dream dielectric layer 14 Finally, the photoresist layer 15 is removed, as shown in FIG. 2A, and the photoresist layer 15 is removed. The plasma of aerobic ions (〇2 piasina) is removed or removed by an organic solvent (for example, an organic solvent containing an amide). Further, after the photoresist layer 15 is removed, a plasma (for example, containing oxygen) may be used. The ion plasma or the plasma containing a fluoride ion concentration of less than 200 PPM and oxygen ions is used to clean the metal layer 10, thereby removing photoresist residue or other foreign matter on the upper surface of the metal layer. __ Next, after completing Figure 2A After the process steps shown, the oxide layer of the metal layer 1 暴露 exposed by the opening 14a is removed by an Ar sputtering etching process or an ion milling process. As shown in Fig. 2D, an adhesion/diffusion barrier layer is formed by sputtering, and the metal layer 10 exposed on the opening 14a is formed on the layer of the stone layer 12 1353652 14 Wherein the word "upper" is used in the present invention to indicate that it is on or in contact with something. The material of the adhesion/diffusion barrier layer 16 is selected, for example, from titanium (Ti), titanium tungsten alloy (TiW), and nitride. Titanium (TiN), chromium (Cr), Ming (Co At least one of or a group of refractory metals or refractory metal-alloys, and the thickness of the adhesion/diffusion barrier layer 16 is It is between 0.03 microns and 0.5 microns. Further, the refractory metal refers to a metal having characteristics such as high melting point and high chemical stability, such as tantalum (Ta), molybdenum (Mo) or tungsten (W). For example, the adhesion/diffusion barrier layer 16 may be a titanium layer having a thickness of between 0.03 micrometers and 0.5 millimeters. The titanium layer is sputtered on the layer of the nitrogen-niobium compound and the metal layer 10 of the material including the copper exposed by the opening 14a; Alternatively, the adhesion/diffusion barrier layer 16 may be a titanium layer having a thickness of between 0.03 micrometers and 0.5 micrometers sputtered on the oxynitride compound layer and the metal layer 10 of the material including the copper exposed by the opening 14a; Alternatively, the adhesion/diffusion barrier layer 16 may be a titanium layer having a thickness of between 0.03 micrometers and 0.5 micrometers sputtered on the layer of the nitrogen-niobium compound and the metal layer _ 10 of the material including the aluminum exposed by the opening 14a; Alternatively, the adhesion/diffusion barrier layer 16 may be a titanium layer having a thickness between 0.03 micrometers and 0.5 micrometers sputtered on the oxynitride compound layer and the opening '14a|exposed material including the metal layer 10 of the name Or, the adhesion/diffusion barrier layer 16 may be a titanium-tungsten alloy layer having a thickness of between 0.03 micrometers and 0.5 micrometers. The splashing of the material on the layer of the nitrogen-niobium compound and the opening 14a includes a monumental metal. Layer __1 卫..上.惑煮丄/Diffusion barrier Z - — -_. -·ΐ·:__--:·一—π_ ·———— 1 - - ·-* — · · · ' ' &quot;&quot;&quot; · ·.~.-··二~ - ········ ~ · !353652 16 may be a titanium-tungsten alloy layer having a thickness between 0.03 micrometers and 〇5 micrometers sputtered on the layer of nitrogen-niobium compound and exposed to the opening 14a including copper Or the adhesion/diffusion barrier layer 16 may be a titanium-tungsten alloy layer having a thickness of between 0.03 micrometers and 0.5 micrometers sputtered on the layer of the nitrogen-niobium compound and exposed to the opening 14a. On the metal layer 10 of aluminum; or, the adhesion/diffusion barrier layer 16 may be a titanium-tungsten alloy layer having a thickness between 微3 and 0.5 μm sputtered on the oxynitride compound layer and the opening 14a. The exposed material consists of a metal layer of aluminum. Referring to FIG. 2E, a metal layer 18 is formed on the adhesion/diffusion barrier layer 16. This metal layer 18 serves as a conductive layer and a seed layer for electroplating, and the thickness is, for example, The method of forming the metal layer 18 between 5 micrometers and 1 millimeter meter is, for example, sputtering, vapor deposition, physical gas phase/integral or electroless plating (electr〇less piating). Since the metal layer 18 can facilitate the placement of the subsequent metal layer, the material of the metal layer 18 varies with the material of the subsequent metal layer, such as when a metal layer of gold (Au) is formed on the metal layer 18 by electroplating. The material of the metal layer 18 is preferably gold. When the metal layer formed of copper (Cu) is formed on the metal layer 18. The metal layer 18 is preferably made of copper. In summary, when the adhesion/diffusion barrier layer 16 is formed by sputtering in a thickness of between 0.03 micrometers and 〇.5 micrometers, the metal layer I8 may have a thickness of between 〇. 〇 5 microns to 丨. A gold layer between the layers is sputtered onto the titanium layer; or, when the adhesion/diffusion barrier layer 16 is formed by sputtering, the thickness is between 〇·〇3 μm to A titanium layer between 0.5 micrometers has a thickness of between 〇. 〇 5 micrometers to 1 micrometer, ♦ ------ ------ a ^ ^.... · two r ·..-.. · a 1-23533652 a copper layer is sputtered on the titanium layer; or, when the adhesion/diffusion barrier layer 16 is formed by sputtering, a thickness of between titanium and tungsten is between 0.03 micrometers and 0.5 micrometers. In the alloy layer, the metal layer 18 may be a gold layer having a thickness of between 0.05 μm and 1 μm sputtered on the titanium tungsten alloy layer; or, when the adhesion/diffusion barrier layer 16 is sputtered. When a titanium-tungsten alloy layer having a thickness of between 0.03 μm and 0.5 μm is formed, the metal layer 18 may be a copper layer having a thickness of between 0.05 μm and 1 μm sputtered on the titanium-tungsten alloy layer. Referring to FIGS. 2F and 2G, a photoresist layer 20 is formed on the metal layer 18, and the photoresist layer 20 is patterned by exposure and development processes to form at least one photoresist layer opening 20a in the photoresist. The metal layer 18 is exposed within the layer 20 (including exposing the metal layer 18 above the metal layer 10 exposed by the opening 14a). Here, the 2Gth image is a cross-sectional side view of the 2Fth image along the photoresist layer opening 20a having the line pattern. The method of forming the photoresist layer 20 is formed, for example, by a spin coating process or by a lamination process, and in the process of patterning the photoresist layer 20, for example, by using a double (IX) exposure. The stepper exposes the photoresist layer 20 or exposes the photoresist layer 20 by a double (IX) alignment exposure machine. In addition, after the development, the metal layer 18 exposed by the photoresist layer opening 20a may be cleaned by using a plasma (for example, a plasma containing oxygen ions or a plasma containing a fluoride ion concentration of less than 200 PPM and oxygen ions), thereby removing the metal. A photoresist residue or other foreign matter on the upper surface of layer 18. Referring to Figure 2H, a metal layer 22 having a thickness between 5 microns and 25 microns is formed by electroplating on the photoresist layer opening m 15 1353652 layer 18. The metal layer 22 includes at least one of copper, nickel or gold, or a group of the plurality of layers, for example, the metal layer 22 may be a single layer metal structure of a gold layer, a single layer metal structure of a copper layer, a composite layer metal structure (copper/nickel) composed of a copper layer and a recording layer on the copper layer, or a copper layer, a recording layer on the copper layer, and a gold layer on the nickel layer The composite layer metal structure (copper/nickel/gold) is composed. In addition, the method of forming the metal layer 22 may also include an electroless plating process. Taking the electroplating process to form the metal layer 22 as an example, the metal layer 22 can be formed by the following four methods: a. plating a copper layer having a thickness between 5 micrometers and 25 micrometers in a plating solution containing a copper sulfate (CuS04) solution. On a metal layer 18 of material such as copper. b. plating a copper layer on a metal layer 18 of a material such as copper with a plating solution containing a copper sulfate (CuS04) solution, and then plating a nickel layer on the copper layer with a plating solution containing a nickel sulfate (NiS04) solution. . The thickness of the copper layer is, for example, between 4 μm and 25 μm, and the thickness of the nickel layer is, for example, between 0.5 μm and 3 μm. c. electroplating a copper layer on a metal layer 18 of a material such as copper with a plating solution containing a copper sulfate (CuS04) solution, and continuing to electroplate a nickel layer in the copper layer with a plating solution containing a nickel sulfate (NiS04) solution. Then, a gold layer is electroplated on the recording layer with a plating solution containing a solution of gold sulfite (Na3Au(S03)2). Wherein, the thickness of the copper layer is, for example, between 4 micrometers and 25 micrometers, and the thickness of the nickel layer is, for example, one of 0.5 micrometers to 3 micrometers; and the thickness of the gold layer is, for example, between 〇.〇. 5 microns to 0.2 micros. 16 1353652. d. A gold layer having a thickness of between 5 micrometers and 25 micrometers of electroplating solution containing a solution of sodium sulfite gold (Na3Au(S03)2) is applied to a metal layer 18 of a material such as gold. Referring to FIG. 21, after the metal layer 22 is formed, the photoresist layer 20 is subsequently removed, and the photoresist layer 20 is removed by, for example, removing plasma using oxygen plasma (02 plasma) or using an organic solvent ( For example, an organic solvent containing an amino compound is removed. In addition, after removing the photoresist layer 20, the metal layer 22 and the metal layer 18 may be cleaned by using a plasma (for example, a plasma containing oxygen ions or a plasma containing a fluoride ion concentration of less than 200 PPM and oxygen ions) to remove the metal. A photoresist residue or other foreign matter on the upper surface of the layer 22 and the upper surface of the metal layer 18. Continuing to refer to FIG. 2J, the metal layer 18 and the adhesion/diffusion barrier layer 16 that are not under the metal layer 22 are removed. Wherein, the manner of removing the metal layer 18 and the adhesion/diffusion barrier layer 16 not under the metal layer 22 is removed by a money engraving method, and the engraving method can be divided into dry etching and wet etching ( Wet etching) two kinds. The best way to remove the adhesion/diffusion barrier layer 16 is to include a chemical plasma etch, a splatter etch (such as a high-pressure argon splatter etch), and a chemical gas etch. For example, in the removal of the metal layer 18, it can be removed by a wet chemical etching process, a sputtering process, or an ion milling process. Moreover, when the material of the metal layer 18 is gold, it can be removed by etching using an iodine-containing etching solution (for example, an etching solution containing potassium iodide), and when the material of the metal layer 18 is copper, it can be used with a -·II circle. Round _ , , ^^^» Round _ · ** · · — — · 一 - » *&gt; , _ _ ·—— : · 17 1353652 Ammonium hydroxide (NH4〇H) etching solution is removed by etching. In the removal of the adhesion/diffusion barrier layer 16, for example, it is removed by a reactive ion silver engraving (RIE) process, a sputtering etch process, or an ion milling process. • Therefore, the present invention can form at least one metal line 24 on the germanium-containing dielectric layer 14, 14 and the opening 1 exposed to the metal layer 10, the metal line 24 is formed by an adhesion/diffusion barrier layer 16, A metal layer 18 on the adhesion/diffusion barrier layer 16 and a metal layer 22 on the metal layer 18 are formed, and the thickness tl is between 5 micrometers and 27 micrometers. After removing the metal layer 18 and the adhesion/diffusion barrier layer 16 which are not under the metal layer 22, a protective layer 32 is formed on the metal line 24 and the germanium-containing dielectric layer 14, and is transparent to the protective layer. A method in which the opening 32a exposes the metal line 24 and the protective layer 32 and the opening 32a are formed as follows. However, the present invention may also be formed in the protective layer 32 without any openings 32a exposing the metal lines 24. The first method for forming the protective layer and the opening is as shown in Fig. 3A. First, a plasma-reinforced chemical vapor deposition (PECVD) is used to form a nitrogen arsenic having a thickness ranging from 〇.丨micron to 〇·5 μm. The compound layer 26 is formed on the metal line 24 with a ruthenium-containing dielectric layer (4 (for example, a ruthenium compound layer or a ruthenium oxynitride layer), followed by plasma enhanced chemical vapor deposition (PECVD) to form a thickness of 〇. A silicon oxide layer 28 between j microns and 〇 5 microns is formed on the yttrium compound layer 26 and finally formed by plasma enhanced chemical vapor deposition (PEcVD) to a thickness of between 0.5 μm and 1.5 μm. The layer of the arsenazo compound is in the layer of the oxonium halide 28 ° 18 1353652. Therefore, the protective layer 32 is composed of a layer of a ruthenium compound compound 26, an oxonium compound layer 28 and a ruthenium compound layer 30. . Further, a manner of forming at least one opening 32a in the protective layer 32 and exposing the metal wiring 24 (e.g., a copper layer, a nickel layer or a gold layer exposing the metal wiring 24) will be described below. The first way of forming the opening 32a is shown in Figures 3B to 3D. First, as shown in FIG. 3B, a photoresist layer 34 is formed on the ytterbium compound layer 30 of the protective layer 32, and then the photoresist layer 34 is patterned by exposure and development processes to form at least one photoresist layer opening 34a. A layer of nitrogen bismuth compound 30 over the metal line 24 is exposed within the photoresist layer 34. The method of forming the photoresist layer 34 is formed, for example, by a spin coating process or by a lamination process, and in the overdriving of the patterned photoresist layer 34, for example, doubling (IX) The stepper is exposed or exposed to the exposure using a double (IX) contact aligner. Referring to FIG. 3C, the yttrium compound layer 30, the yttrium compound layer 28 and the yttrium compound layer 26 under the photoresist layer opening 34a are sequentially removed to form at least one opening 32a in the protective layer 32 and exposed. Metal line 24 (e.g., a copper layer, a nickel layer, or a gold layer that exposes metal lines 24). The manner of removing the nitrogen argon compound layer 30, the oxon compound layer 28 and the yttrium compound layer 26 under the photoresist layer opening 34a is, for example, removed by etching, and is removed by reactive ion etching (RIE) process etching. - Good way. · Referring to FIG. 3D, the photoresist layer 34 is removed, and the photoresist layer 34 is removed by, for example, removing plasma using oxygen ions or using an organic solvent (for example, containing an amino compound). Organic solvent) removed. In addition, after removing H-thickness 34-彳4"jrm垔, for example, Γ Τ-1—1 &quot;* w- τ__ _ ·. · — · · · ~ — - - «- · — — * — ···. **-·»**, 19 1353652 Plasma containing oxygen ions or plasma containing fluoride ions with a concentration of less than 200 PPM and oxygen ions) The metal line 24 exposed by the cleaning opening 32a is removed A photoresist residue or other foreign matter on the upper surface of the metal line 24. The second way of forming the opening 32a is shown in Figs. 3E to 3F. First, referring to FIG. 3E, spin coating iii forms a polymer layer 36 on the nitrogen bismuth compound layer 30 of the protective layer 32, followed by baking, exposure, and development. The polymer layer 36 is patterned to form at least one polymer layer opening 36a within the polymer layer 36 and expose the nitrogen bismuth compound layer 30 over the metal line 24. In the process of patterning the polymer layer 36, for example, exposure is performed by a double (IX) stepper or by a double (1X) contact aligner. Further, in a nitrogen atmosphere or an oxygen-free environment, a curing process is used at a temperature between 200 ° C and 290 ° C, between 290 ° C and 330 ° C or between 330 ° C. To 400. (: The polymer layer 36 is hardened between and the hardening process is performed for a period of between 30 minutes and 2 hours. The polymer layer 36 is, for example, selected from the group consisting of polyimide (PI) and phenyl ring. One of benzocyclobutane (BCB), polyurethane, epoxy resin, polyparaxylene polymer, welding cap material, elastic material or porous dielectric material, and hardened polymer The thickness of the layer 36 is, for example, between 5 micrometers and 30 microseconds. For example, the polymer layer 36 may be a polyimide layer having a thickness of between 5 micrometers and 30 micrometers or a thickness of 5 micrometers to A stupid cyclobutene layer between 30 microns. Referring to Figure 3F, the polymer layer opening 36a is removed sequentially - - - ** - - - - · · · - - -------., , — · '* ~ . 子—.圆圆·. Circle *^^**^^ * I _ I IM· , I circle · ·- ·*_» V - — ~ ~ ' ---·-·*τϊ- . - — '一·1 &quot; - ·· - · · - · - ____.. — .r~iz 20 1353652 The yttrium compound layer 30 And an oxonium compound layer 28 and a yttrium compound layer 26 to form at least one The port 32a is in the protective layer 32 and exposes a metal line 24 (e.g., a copper layer, a nickel layer or a gold layer exposing the metal line 24). wherein - the nitrogen bismuth compound layer 30, oxonium under the polymer layer opening 36a is removed. The manner of the compound layer 28 and the nitrogen argon compound layer 26 is, for example, removed by etching, and is preferably removed by reactive ion etching (RIE) process etching. Further, the above-mentioned nitrogen bismuth compound layer 26 may also be composed of a oxynitride compound. Layer substitution, that is, plasma enhanced chemical vapor deposition (PECVD) to form a layer of oxynitride compound having a thickness between 0.1 micrometers and 0.5 micrometers on metal line 24 and a germanium containing dielectric layer 14 (eg, nitrogen) On the bismuth layer or the oxynitride layer, followed by plasma enhanced chemical vapor deposition (PECVD) to form an oxonium compound layer 28 having a thickness between 0.1 μm and 0.5 μm. On the ruthenium compound layer, plasma-reinforced chemical vapor deposition (PECVP) is continuously used to form a ruthenium nitride compound layer 3 having a thickness of between 0.5 μm and 1.5 μm on the oxonium compound layer 28, and then proceeding. Figure 3B above to The steps described in the 3D diagram or the steps described in the above FIG. 3E to FIG. 3F are not described in detail herein, but those skilled in the art can implement the same by the above description. For the protection of drawers and recitations, please refer to Figure 4A, first to form a layer of arsenide compound 38 between 〇丨μm and 〇5μm by plasma enhanced chemical vapor deposition (PECVD). On the metal line 24 and the ruthenium-containing dielectric layer i4 (for example, a ruthenium compound layer or an It oxy-compound layer), the plasma-enhanced chemistry is further used to form 21 1353652 oxygen having a thickness of between 0.1 μm and 0.5 μm. The ruthenium compound layer 40 is on the ruthenium compound layer 38, followed by formation of a spin on glass (SOG) layer 42 on the oxonium compound layer 40. Continuing, the spin-on glass layer 42 is etched using an etch process to expose the oxonium compound layer 40. Further, a nitrogen arsenide compound layer 44 having a thickness of between 0.5 μm and 1.5 μm is formed on the spin-on glass layer 42 and the exposed oxonium compound layer 40 by plasma enhanced chemical vapor deposition (PECVD). on. Therefore, the protective layer 32 is composed of a ruthenium nitride compound layer 38, an oxonium compound layer 40, a spin-on glass layer 42, and a ruthenium nitride compound layer 44. Further, a manner of forming at least one opening 32a in the protective layer 32 and exposing the metal wiring 24 (e.g., a copper layer, a nickel layer or a gold layer exposing the metal wiring 24) will be described below. The first way of forming the opening 32a is shown in Figs. 4B to 4E). First, as shown in FIG. 4B, a photoresist layer 46 is formed on the nitrogen-germanium compound layer 44 of the protective layer 32, and then through a process such as exposure and development to form a photoresist layer 46 to form at least one photoresist layer opening. 46a is within the photoresist layer 46 and exposes the nitrogen bismuth compound layer 44 above the metal line 24. Wherein, the manner tb of forming the photoresist layer 46 is formed by a spin coating process or by a lamination process, and in the patterned photoresist layer 46, for example, using — (IX) The exposure machine (stepper) performs exposure with a double (1X) contact aligner to expose the exposure. Please refer to FIG. 4C 热 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ , , &amp; in the protective layer 32 and expose the metal line ^ exposed metal recorded Di, two, Λ. ~ ''~~~~~'^. a ''--ά.~% 24 copper layer, Record layer or gold layer). Wherein, 22 1353652 removes the yttrium compound layer 44, the yttrium compound layer 40 and the yttrium compound layer 38 under the photoresist layer opening 46a, for example, by etching, and is removed by reactive ion etching (RIE) process etching. Is the preferred way. Referring to FIG. 4D, the photoresist layer 46 is removed, and the photoresist layer 46 is removed by, for example, removing plasma using oxygen ions or using an organic solvent (for example, containing an amino compound). Organic solvent) removed. In addition, after removing the photoresist layer 46, the metal line 24 exposed by the opening 32a may be cleaned by using a plasma (for example, a plasma containing oxygen ions or a plasma containing a fluoride ion concentration of less than 200 PPM and oxygen ions). The photoresist residue or other foreign matter on the upper surface of the metal line 24 is removed. The second way of forming the opening 32a is shown in Figs. 4E to 4F. First, as shown in FIG. 4E, a polymer layer 48 is spin-coated to form a polymer layer 48 on the protective layer 32, and then the polymer layer 48 is patterned by baking, exposure and development to form at least one. The polymer layer opening 48a is within the polymer layer 48 and exposes the nitrogen bismuth compound layer 44 above the metal line 24. In the process of patterning the polymer layer 48, for example, a one-time (IX) stepper is used for exposure or a double (IX) contact aligner is used for exposure. Further, in a nitrogen atmosphere: or an anaerobic environment, a curing process is used at temperatures between 200 ° C and 290 ° C, between 290 ° C and 330 ° C or between 330 °. The polymer layer 48 is hardened between C and 400 ° C, and the hardening process is carried out for a period of between 30 minutes and 2 hours. Wherein, the polymer layer 48 is, for example, selected from the group consisting of polyimine (PI), phenylcyclobutene (BCB), polyurethane, epoxy Lesin, polyparaxylene, high fat t, _5 drought Bios, _f"t raw material or porous, — . , 1 I ·- - Ύ - - - ' : - - - - - - - - · · - - ' · * ' * - - __ -_** * • Two--'- 23 1353652 one of the dielectric materials, and the thickness of the hardened polymer layer 48 is, for example, between 5 micrometers and 30 micrometers, for example, the polymer layer 48 may be 5 micrometers thick. A layer of polyamidene between 30 microns or a layer of phenylcyclobutene having a thickness between 5 microns and 30 microns. Referring to FIG. 4F, the yttrium compound layer 44, the yttrium compound layer 40 and the yttrium compound layer 38 under the polymer layer opening 48a are sequentially removed to form at least one opening 32a in the protective layer 32 and exposed. Metal line 24 (e.g., a copper layer, a nickel layer, or a gold layer that exposes metal lines 24). The manner of removing the nitrogen argon compound layer 44, the oxon compound layer 40 and the yttrium compound layer 38 under the polymer layer opening 48a is, for example, removed by etching, and is removed by reactive ion etching (RIE) process etching. Good way. In addition, the above-mentioned nitrogen bismuth compound layer 38 may also be replaced by a oxynitride compound layer, that is, a plasma reinforced chemical vapor deposition (PECVD) is used to form a oxynitride compound layer having a thickness of between 0.1 μm and 0.5 μm. On the metal line 24 and the germanium-containing dielectric layer 14 (for example, a layer of a cerium nitride compound or a layer of oxynitride compound), the use of enhanced plasma chemical vapor deposition (PECVD) continues to form a thickness of between 0.1 micrometers and 0.5 micrometers. An inter-phosphonium compound layer 40 is on the oxynitride compound layer, followed by a spin-on glass (800) layer 42 on the oxon compound layer 40, and the spin-on glass layer 42 is further etched using an etching process. Exposing the oxonium compound layer 40 to form a ruthenium nitride compound layer 44 having a thickness of between 0.5 μm and 1.5 μm on the spin-on glass layer 42 and the exposed oxon compound layer 40, followed by The steps described in the above 4B to 4D or the steps described in the above 4E to 4F are not described in detail herein, but the skilled person can Explain and implement accordingly. The third method for forming the protective layer and the opening is as shown in FIG. 5, first forming a layer of a nitrogen arsenide compound having a thickness of between 0.1 μm and 0.5 μm by plasma enhanced chemical vapor deposition (PECVD). On the metal line 24 and the germanium-containing dielectric layer 14 (for example, a layer of a cerium nitride compound or a layer of oxynitride compound), plasma-reinforced chemical vapor deposition (PECVD) is continuously used to form a thickness between 0.1 μm and 0.5 μm. The oxonium compound layer 40 is on the yttrium compound layer 38. Next, spin coating forms a polymer layer 50 on the oxon compound layer 40, and in a nitrogen atmosphere or an oxygen-free environment, using a curing process at a temperature between 200 ° C and 290 ° C, The polymer layer 50 is hardened between 290 ° C and 330 ° C or between 330 ° C and 400 ° C, wherein the hardening process is carried out for a period of between 30 minutes and 2 hours, and the polymer layer 50 For example, polyimine (PI) or phenylcyclobutene (BCB). Continuing, the polymer layer 50 is etched using an etching process to expose the oxonium compound layer 40. Further, a ruthenium nitride compound layer 44 having a thickness of between 0.5 μm and 1.5 μm is formed on the polymer layer 50 and the exposed oxonium compound layer 40 by plasma enhanced chemical vapor deposition (PECVD). Therefore, the protective layer 32 is composed of a ruthenium nitride compound layer 38, an oxygen chopped compound layer 40, a polymer layer 50 and a nitrogen pulverized compound layer 44. In addition, regarding the manner in which at least one opening 32a is formed in the protective layer 32 and the metal line 24 is exposed (for example, a copper layer, a nickel layer or a gold layer exposing the metal line 24), please refer to the above FIG. 4B to FIG. 4F. The related description will not be described in detail here. ___________ 25 1353652 In addition, the above-mentioned nitrogen compound layer 38 may also be replaced by a oxynitride compound layer, that is, by plasma enhanced chemical vapor deposition (PECVD). Forming a layer of oxynitride compound having a thickness between 0.1 μm and 0.5 μm on the metal line 24 and the germanium-containing dielectric layer 14 (for example, a layer of a ruthenium compound or a layer of oxynitride compound), continuing to utilize the plasma Enhanced chemical vapor deposition (PECVD) to form an oxonium compound layer having a thickness of between 0.1 μm and 0.5 μm on the oxynitride compound layer, followed by formation of a polymer layer 5 〇 in the oxygen stone compound On layer 40, the polymer layer 5 is then etched using an etching process to expose the oxonium compound layer 40, and then plasma-reinforced chemical vapor deposition (PECVD) is used to form a thickness of between 0.5 μm and 1.5 μm. Nitrogen The compound layer 44 is formed on the polymer layer 50 and the exposed oxon compound layer 40, and finally the steps described in the above FIGS. 4B to 4D or the steps described in the above 4E to 4F are performed. It is not described in detail here, however, those skilled in the art can implement it by the above description. The fourth type of protective layer and the hot mouth method

Referring to FIG. 6A, first, a plasma enhanced chemical vapor deposition (PECVD) is used to form a layer of a ruthenium nitride compound 52 having a thickness between 〇.丨micron and 〇5 micrometers on the metal line 24 and containing germanium. On the dielectric layer 14 (for example, a layer of a ruthenium compound or a layer of oxynitride compound), plasma-enhanced chemical vapor deposition (PECVD) is continued to form an oxonium compound having a thickness of between 〇丨micrometers and 〇5 micrometers. Layer 54 is on the yttrium compound layer 52, followed by formation of a spin on glass (SOG) layer 56 on the oxon compound layer 54.

An etch process etches the spin-on glass layer 56 to expose the oxonium compound layer to form a etched compound layer 58 having a thickness of 26 1353652 degrees between 0 and 2 microns to 0.5 microns on the spin-on glass layer 56. The exposed oxonium compound layer 54 is on. Further, a ruthenium compound layer 60 having a thickness of between 0.5 μm and 1.5 μm is formed on the oxonium compound layer 58 by plasma enhanced chemical vapor deposition (PECVD). Therefore, the protective layer 32 is composed of a ruthenium nitride compound layer 52, an oxonium compound layer 54, a spin-on glass layer 56, an oxonium compound layer 58, and a ruthenium nitride compound layer 60. Further, a method of forming at least one opening 32a in the protective layer 32 and exposing the metal wiring 24 (e.g., a copper layer, a recording layer or a gold layer exposing the metal wiring 24) is as follows. The first way of forming the opening 32a is shown in Figs. 6B to 6D. First, referring to FIG. 6B, a photoresist layer 62 is formed on the nitriding compound layer 60 of the protective layer 32, and then the photoresist layer 62 is patterned by exposure and development processes to form at least a photoresist layer opening. 62a is within the photoresist layer 62 and exposes the nitrogen bismuth compound layer 6〇 above the metal line 24. The method of forming the photoresist layer 62 is formed by, for example, a spin coating process or a lamination process, and in the process of patterning the photoresist layer 62, for example,丨χ) The exposure machine (stepper) performs exposure or 疋 疋 (IX) alignment exposure machine (c〇ntact aligner) into the exposure. Referring to FIG. 6C, the yttrium compound layer 60, the yttrium compound layer 58, the oxonium compound layer w and the nitriding compound layer 52' under the photoresist layer opening 62 &amp; are sequentially removed to form at least one opening. 〇32a is in the protective layer h and exposes the metal line 24 (for example, the copper layer exposing the metal line 24, and removing the nitrogen argon under the photoresist layer opening 02a) a ----------. / 27 1353652 The method of the layer 60, the yttrium compound layer 58, the yttrium compound layer 54 and the yttrium compound layer 52 is, for example, removed by etching, and is preferably removed by reactive ion etching (RIE) process etching. Referring to FIG. 6D, the photoresist layer 62 is removed, and the photoresist layer 62 is removed by, for example, removing plasma using oxygen plasma (02 plasma) or using an organic solvent (for example, containing an amino compound). In addition, after removing the photoresist layer 62, the plasma 32 (for example, a plasma containing oxygen ions or a plasma containing a fluoride ion concentration of less than 200 PPM and fluorine ions) may be used to clean the opening 32a. Metal line 24 to remove metal lines 24 The photoresist residue or other foreign matter on the surface. The second way of forming the opening 32a is shown in Figures 6E to 6F. First, as shown in Figure 6E, spin coating to form a polymer layer 64 in the protective layer. The polymer layer 64 is patterned on a layer of nitrogen bismuth compound 60, followed by baking, exposure and development to form at least one polymer layer opening 64a in the polymer layer 64 and exposing the nitrogen above the metal line 24. The ruthenium compound layer 60. During the process of patterning the polymer layer 64, for example, exposure with a double (IX) stepper or doubling (IX) alignment aligner Into the exposure. Come again - in the nitrogen: in a gaseous or anaerobic environment, using a curing process at temperatures between 200 ° C and 290 ° C, between 290 ° C and 330 ° C The polymer layer 64 is hardened between 330 ° C and 400 ° C, and the hardening process is carried out for a period of between 30 minutes and 2 hours. The polymer layer 64 is, for example, selected from the group consisting of polyfluorene. Imine (PI), phenylcyclobutene (BCB), polyurethane, epoxy resin, polyparadimethylene One of the polymer type 'welding material, the dream material or the porous 28 1353652 dielectric material, and the thickness of the hardened polymer layer 64 is, for example, between 5 micrometers and 30 micrometers, for example, the polymer layer 64. It may be a layer of polyamidene having a thickness of between 5 micrometers and 30 micrometers or a layer of phenylcyclobutene having a thickness of between 5 micrometers and 30 micrometers. See Figure 6F, in order The nitrogen argon compound layer 60, the oxonium compound layer 58, the oxonium compound layer 54 and the yttrium compound layer 52 under the polymer layer opening 64a are removed to form at least one opening 32a in the protective layer 32 and expose the metal line 24 ( For example, a copper layer, a gold layer or a gold layer of the metal line 24 is exposed. Wherein, the manner of removing the nitrogen argon compound layer 60, the oxonium compound layer 58, the oxygen oxysulfide compound layer 54 and the nitrogen argon compound layer 52 under the polymer layer opening 64a is, for example, removed by etching and reactive ion etching ( RIE) Process etching removal is the preferred mode. In addition, the above-mentioned nitrogen argon compound layer 52 may also be replaced by a oxynitride compound layer, that is, a plasma reinforced chemical vapor deposition (PECVD) is used to form a oxynitride compound layer having a thickness of between 0.1 μm and 0.5 μm. On the metal line 24 and the germanium-containing dielectric layer 14 (for example, a layer of a cerium nitride compound or a layer of oxynitride compound), the subsequent reading is formed by plasma enhanced chemical vapor deposition (PECVD) to a thickness of 0.1 μm to 0.5 μm. An ambiguity between the layers of -4 on this oxynitride compound layer, followed by formation of a spin-on-glass (SOG) layer 56 on the oxonium compound layer 54, followed by an etching process etch The glass layer 56 is coated to expose the oxonium compound layer 54 and continue to form a ruthenium compound layer 58 having a thickness of between 0.2 μm and 0.5 μm by plasma enhanced chemical vapor deposition (PECVD). On the glass layer 56 and the exposed oxonium compound layer 54, a layer of a ruthenium ruthenium compound having a thickness of between 0.5 μm and 1.5 μm is formed by plasma deposition of a gas chromatograph 29 1353652 (PECVD). 60 on the oxonium compound layer 58 and finally The steps described in the above 6B to 6D or the steps described in the above 6E to 6F are not described in detail here, but those skilled in the art can use the above description. To implement. _ The fifth method for forming the protective layer and the opening is as shown in Fig. 7, first forming a layer of a ruthenium nitride compound layer having a thickness of between 0.1 μm and 0.5 μm by plasma enhanced chemical vapor deposition (PECVD). On the metal line 24 and the germanium-containing dielectric layer 14 (for example, a layer of a cerium nitride compound or a layer of oxynitride compound), plasma-reinforced chemical vapor deposition (PECVD) is continuously used to form a thickness of 0.1 μm to 0.5 μm. The inter-monooxon compound layer 54 is on the nitrogen hydrazine compound layer 52. Next, spin coating forms a polymer layer 66 on the oxon compound layer 54 and in a nitrogen atmosphere or an oxygen-free environment, using a curing process at a temperature between 200 ° C and 290 ° C, between The polymer layer 66 is hardened between 290 ° C and 330 ° C or between 330 ° C and 400 ° C, wherein the hardening process is carried out for a period of between 30 minutes and 2 hours, and the polymer layer 66 For example, polyimine (PI) or benzene tombenbutene (BCB). Thereafter, an etching layer T is used to etch the layer 66 to expose the oxon compound layer 54. Continuing, a layer of oxonium compound 58 having a thickness of between 0.2 microns and 0.5 microns is formed on the polymer layer 66 and the exposed oxonium compound layer 54 by plasma enhanced chemical vapor deposition (PECVD). Further, a layer of a ruthenium nitride compound layer having a thickness of between 0.5 μm and 1.5 μm is formed by plasma-enhanced chemical vapor deposition (PECVD) on the winter-rocky layer 58. 30 1353652 - Thus, the protective layer 32 is composed of a nitrile compound layer 52, a oxonite compound layer 54, a polymer layer 66, an oxygen compound layer 58, and a nitrogen compound layer 60. For the manner of forming at least one opening 32a in the protective layer 32 and exposing the metal line 24 (for example, a copper layer, a nickel layer or a gold layer exposing the metal line 24), please refer to the relevant descriptions of FIGS. 6B to 6F above. It will not be explained in detail here. In addition, the above-mentioned nitrogen compound layer 52 may also be replaced by a yttrium-deuterium compound layer, that is, an iammonia compound having a thickness of between 0.1 μm and 0.5 μm is formed by paddle-type chemical vapor deposition (PECVD). The layer continues on the metal line 24 with the germanium containing dielectric layer 14 (eg, a layer of a ruthenium nitride compound or a layer of oxynitride compound) and continues to form a thickness between 0.1 micron and 0.5 micron by plasma enhanced chemical vapor deposition (PECVD). An oxonium compound layer 54 is disposed on the oxynitride compound layer, followed by formation of a polymer layer 66 on the oxonium compound layer 54, followed by etching the polymer layer 66 using an etching process to expose the oxonium compound. Layer 54, continues to utilize plasma enhanced chemical vapor deposition (PECVD) to form an oxonium compound layer 58 having a thickness between 0.2 microns and 0.5 microns on the polymer layer 66 and the exposed oxonium compound layer 54. Then, a plasma reinforced chemical vapor deposition (PECVD) is used to form a ruthenium nitride compound layer 60 having a thickness of between 0.5 μm and 1.5 μm on the oxonium compound layer 58 and finally subjected to the above-mentioned FIG. 6B to The steps described in the 6D diagram 6E for the first or second step of the FIGS FIG 6F, which is not described in detail, those skilled in the art that when then can be described by the above-described embodiment and accordingly. 6 kinds of formation of the upper layer of the protective layer -1 - 31 1353652 Please refer to Figure 8A, using plasma enhanced chemical vapor deposition (PECVD) to form a nitrogen bismuth thickness between 0.5 microns and 1.5 microns Compound layer 68 is on metal line 24 with a ruthenium containing dielectric layer 14 (e.g., a ruthenium compound layer or a nitroxanthine compound layer). Therefore, the protective layer 32 is composed of a nitrogen argon compound layer 68. Further, a manner of forming at least one opening 32a in the protective layer 32 and exposing the metal wiring 24 (e.g., a copper layer, a nickel layer or a gold layer exposing the metal wiring 24) will be described below. The first way of forming the opening 32a is shown in Figs. 8B to 8D. First, referring to FIG. 8B, a photoresist layer 70 is formed on the ytterbium compound layer 68, and then the photoresist layer 70 is patterned by exposure and development processes to form at least one photoresist layer opening 70a in the photoresist layer. A layer of nitrogen ruthenium compound 68 over metal line 24 is exposed within 70. The method of forming the photoresist layer 70 is formed, for example, by a spin coating process or by a lamination process, and is used in the process of patterning the photoresist layer 70, for example, by doubling (IX). The stepper is exposed or exposed to the exposure using a double (IX) contact aligner. Referring to Fig. 8C, the underlying nitrogen ruthenium compound layer 68 of the photoresist layer opening 7_0a is removed to form at least one opening 32a in the protective layer 32 and expose the metal line 24. Among them, the manner of removing the nitrogen ruthenium compound layer 68 under the photoresist layer opening 70a is, for example, removed by silver etching, and is preferably removed by reactive ion etching (RIE) process etching. Referring to FIG. 8D, the photoresist layer 70 is removed, and the photoresist layer 70 is removed by, for example, using an oxygen-containing, sub-electricity p]_asjna}_32 1353652 to remove or utilize an organic solvent ( For example, an organic solvent containing an amino group-based compound is removed. In addition, after removing the photoresist layer 70, the metal line 24 exposed by the opening 32a may be cleaned by using a plasma (for example, a plasma containing oxygen ions or a plasma containing a fluoride ion concentration of less than 200 PPM and oxygen ions). The photoresist residue or other foreign matter on the upper surface of the metal line 24 is removed. The second way of forming the opening 32a is shown in Figs. 8E to 8F. First, as shown in FIG. 8E, a polymer layer 72 is spin-coated to form a polymer layer 72 on the yttrium compound layer 68, followed by a process of baking, exposing and developing to form a polymer layer 72 to form at least one polymer layer opening. 72a is within polymer layer 72 and exposes a layer of nitrogen bismuth compound 68 over metal line 24. In the process of patterning the polymer layer 72, for example, exposure is performed by a double (IX) stepper or by a double (1 parent) contact aligner. Further, in a nitrogen atmosphere or an oxygen-free environment, a curing process is used at a temperature between 200 ° C and 290 ° C, between 290 ° C and 330 ° C or between 330 ° C. The polymer layer 72 is hardened to between 400 ° C and the hardening process is carried out for a period of between 30 minutes and 2 hours. The polymer layer 72 is, for example, selected from the group consisting of polyimine (PI), phenylcyclobutene (BCB), polyurethane, epoxy resin, polyparaphenylene phthalate polymer, and welding cap. One of a material, an elastic material or a porous dielectric material, and the thickness of the hardened polymer layer 72 is, for example, between -5 micrometers and 30 micrometers, for example, the polymer layer 72 may have a thickness of 5 micrometers to 30 micrometers. A layer of polyamidene between the micrometers or a layer of phenylcyclobutene having a thickness of between 5 micrometers and 30 micrometers. ____ Read the reference to the 8F calendar $, remove the nitrogen 33 1353652 矽 compound layer 68 under the polymer layer opening 72a to form at least one opening 32a in the protective layer 32 and expose the metal line 24 » wherein the polymer is removed The manner of the nitrogen argon compound layer 68 under the layer opening 72a is, for example, removed by etching and removed by a reactive silicon ion etching (RIE) process. In summary, a protective layer 32 is formed on the metal line 24 and the germanium-containing dielectric layer 14 (for example, a layer of a cerium nitride compound or a layer of oxynitride compound), and the protective layer 32 can protect the semiconductor element 4 and the wiring structure 6 And the metal line 24 is protected from the damage of moisture and foreign ion contamination 'that is, the protective layer 32 can prevent moving ions (such as sodium ions), water gas (m〇isture), transition metal (such as gold, silver, copper) and other impurities penetrate, and damage the semiconductor component 4 under the protective layer 32 (such as a transistor, a polycrystalline resistive element or a polycrystalline sinusoidal poly capacitor) , line structure 6 or metal line %. Here, the "lower"-word means in the present invention that it is located under and in contact with something, or that it is located underneath something but is not in contact therewith. The maximum lateral dimension of the opening 32a is, for example, between 2 microns and % microns or between 30 microns and 300 microns. In addition, the shape of the opening 32 &amp; may be a circle, a square or a polygon of five or more sides, and the maximum lateral dimension of the opening 8a refers to the diameter dimension of the circular opening, the side length dimension of the square opening or the polygonal opening of five or more sides. The longest diagonal size. Further, the shape of the opening π 32a may be a rectangle, and the width of the rectangular opening is between 2 μm and 40 μm. In addition, the base metal line 24 is a reconfigurable line (redistributed to the port 32a). 34 1353652 The position of the metal line 24 is different from the position of the metal layer 10 exposed by the opening 14a. The invention can also be an interconnecting metal trace. Therefore, the metal layer 10 exposed by the two openings 14a or the two openings 14a can be connected via the metal line 24, and the manner of formation is as follows. First, please refer to FIG. 9A. Forming a dream dielectric layer 14 (eg, a nitrogen compound layer or a oxynitride compound layer) above the wiring structure 6 and above the dielectric layer 8 and containing the germanium dielectric layer 14 as described in FIG. 2A. At least two openings 14a respectively expose at least two metal layers 10 of the line structure 6, and regarding the germanium-containing dielectric layer 14, the opening 14a, and the formation of the germanium-containing dielectric layer 14 and the opening 14a, please refer to the above 2A. The description of the figure to FIG. 2C will not be described in detail here. Referring to FIG. 9B, an adhesive/diffusion barrier 16 is formed in the ytterbium-containing dielectric as described in FIGS. 2D to 2E. Layer 14 (eg, nitrogen evolution) a metal layer 10 on the layer or the yttrium compound layer) and the two openings 14a are respectively exposed, and a metal layer 18 is formed on the adhesion/diffusion barrier layer 16 with respect to the adhesion/diffusion barrier 16 and For the description of the metal layer 18, please refer to the description of FIG. 2D to FIG. 2E, which will not be described in detail herein. Referring to FIG. 9C, a photoresist layer 74 is formed on the metal layer 18, and is exposed through exposure. Developing a patterned photoresist layer 74, such as forming a photoresist layer opening 74a in the photoresist layer 74 and exposing the metal layer 18 (including exposing the two metal layers 10 exposed at the two openings 14a, respectively) The upper metal layer 18), wherein the photoresist layer 74 is formed, for example, by a spin coating process to form a lamination process, and the photoresist layer 74 is patterned at 35 1353652. For example, the exposure is performed by a double (l-Χ)-stepper or by a double (IX) contact aligner. Alternatively, the plasma can be utilized after development ( For example, a plasma containing oxygen ions or containing a fluoride ion concentration of less than 200 PPM and oxygen The plasma of the ion) cleans the metal layer 18 exposed by the photoresist layer opening 74a, thereby removing the photoresist residue or other foreign matter on the upper surface of the metal layer 18. See Figure 9D, as shown in Figure 2H. For example, a metal layer 22 having a thickness t2 between 5 micrometers and 25 micrometers is formed on the metal layer 18 exposed by the photoresist layer opening 74a. For the description of the metal layer 22, please refer to the description of FIG. 2H. It will not be explained in detail here. Referring to FIG. 9E, after the metal layer 22 is formed, the photoresist layer 74 is removed, and the photoresist layer 74 is removed by, for example, removing plasma using oxygen ions or using an organic solvent. Removal (for example, an organic solvent containing an amino compound). In addition, after removing the photoresist layer 74, the metal layer 22 and the metal layer 18 may be cleaned by using a plasma (for example, a plasma containing oxygen ions or a plasma containing a fluoride ion concentration of less than 200 PPM and oxygen ions) to remove the metal. A photoresist residue or other foreign matter on the upper surface of the layer 22 and the upper surface of the metal layer 18. Referring to Figure 9F, the metal layer 18 and the adhesion/diffusion barrier layer 16 which are not under the metal layer 22 are removed. For the manner of removing the metal layer 18 and the adhesion/diffusion barrier layer 16 which are not under the metal layer 22, please refer to the description of FIG. 2J, which will not be described in detail herein. Therefore, the present invention can form a metal line 1 〇 _ _ a metal line J J _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ V—; .. ^ . 一一-二_ . . . . , —————— Two:-· V.-; ·- ·' . . . * * 36 1353652 疋 by a sticky / diffusion resistance The barrier layer 16 is formed of a metal layer 18 on the adhesion/diffusion barrier layer 16 and a metal layer 22 on the metal layer 18, and has a thickness t3 of between 5 micrometers and 27 micrometers. Next, after removing the metal layer 18 and the adhesion/diffusion barrier layer 16 which are not under the metal layer 22, a protective layer 32 is formed on the metal line % and the germanium-containing dielectric layer 14 (for example, a nitrogen-nenetium compound layer or nitrogen oxide). On the ruthenium compound layer, the metal line 24 may be exposed through at least one opening 32a located in the protective layer 32, or the metal layer 24 may be exposed without any opening 32a in the protective layer 32. For the method of forming the protective layer 32 and the opening 32a, please refer to the above descriptions of the "methods for forming the protective layer and the opening", and the ninth embodiment is formed by the method of the cover and the opening. The protective layer 32 is formed on the metal line 24 and The metal layer 24 is exposed on the dielectric layer 14 and there is no opening 3 in the protective layer 32. However, those skilled in the art can use the above-mentioned six methods of "forming a protective layer and opening" by the above description. The content can be implemented accordingly, and at least one opening 32a can be formed in the protective layer 32. The metal circuit 24 is exposed to connect an external circuit, wherein the external circuit is connected by, for example, using a wire bonding process to bond a wire (for example, a gold wire). One end of the wire or copper wire is connected to the exposed metal line 24, and the other end is connected to the external circuit. In addition, the external circuit may be a semiconductor wafer, a printed circuit board, a flexible board, a substrate containing a ceramic material, a previously formed passive passive device or a glass substrate, and the printed circuit board contains glass fibers, and the flexible board includes a thickness. A polymer layer (eg, polyimine) between 3 microns and 2 microns. In a manner, the present invention 37 1353652 can also form a pad on the metal layer 10 exposed by the opening 14a, and form a protective layer 32 on the pad through the above six methods of forming a protective layer and opening. An opening 32a of the germanium-containing dielectric layer 14 and located in the protective layer 32 exposes a pad, and the manner of formation is as follows. First, as shown in FIG. 10A, a stone-containing dielectric layer 14 (for example, a nitrogen compound layer or a oxynitride layer) is formed in the contents of FIGS. 2A, 2D, and 2E. Above the wiring structure 6 and above the dielectric layer 8, and at least one opening 14a in the germanium-containing dielectric layer 14 exposes at least one metal layer 10 of the wiring structure 6, and the associated dielectric layer 14, the opening 14a and For the description of the formation of the stone-containing dielectric layer 14 and the opening 14a, please refer to the descriptions of FIGS. 2A to 2C above, and the detailed description thereof will not be repeated here. Next, an adhesion/diffusion barrier 16 is formed on the metal layer 10 exposed on the germanium-containing dielectric layer 14 (for example, a layer of a cerium nitride compound or a layer of oxynitride compound) and the opening 14a, and a metal layer 18 is formed. The adhesion/diffusion barrier layer 16 and the description of the adhesion/diffusion barrier 16 and the metal layer 18 are described in the description of FIGS. 2D to 2E, and will not be described in detail herein. Referring to FIG. 10B, a photoresist layer 76 is formed on the metal layer 18, and at least one photoresist layer opening 76a is formed on the photoresist layer 76 by patterning the photoresist layer 76 through exposure and display processes. The metal layer 18 is positioned inside the metal layer 10 exposed by the opening 14a. Wherein, the method of forming the photoresist layer 76 is formed, for example, by a spin coating process or by a lamination process, and in the process of patterning the photoresist layer 76, for example, using one time ( The IX) stepper performs exposure or a double-fold (1X) contact aligner. Another: ― 38 1353652 After the development, the plasma exposed by the photoresist layer opening 76a can be cleaned by using a plasma (for example, a plasma containing oxygen ions or a plasma containing a gas ion concentration of less than 20 〇 PPM and oxygen'). Layer 18 is used to remove photoresist residues or other foreign matter from the upper surface of metal layer 18. • Referring to FIG. 10C, a metal layer 22 having a thickness between 5 micrometers and 25 micrometers is formed on the metal layer 18 exposed by the photoresist layer opening 76a, as described in FIG. 2H. For a description of the metal layer 22, refer to the description of FIG. 2H, which will not be described in detail herein. Referring to FIG. 10D, after the metal layer 22 is formed, the photoresist layer 76 is removed, and the photoresist layer 76 is removed, for example, by using a plasma containing oxygen ions to remove or using an organic solvent. Removal (for example, an organic solvent containing a gas-based compound). In addition, after removing the photoresist layer 76, the metal layer 22 and the metal layer 18 may be cleaned by using a plasma (for example, a plasma containing oxygen ions or a plasma containing a fluoride ion concentration of less than 200 PPM and oxygen ions) to remove the metal. Resist residue or other foreign matter on the upper surface of layer 22 and the upper surface of metal layer 18. Referring to Fig. 10E, the metal layer 18 and the adhesion/diffusion barrier layer 16 which are not under the metal layer 22 are removed. For the manner of removing the metal layer 18 and the adhesion/diffusion barrier layer μ which are not under the metal layer 22, please refer to the description of Fig. 2J, which will not be described in detail. Therefore, the present invention can form at least the interface 78 for connecting an external circuit on the metal layer 10 exposed by the opening 14a. The pad 78 is formed by a point/diffusion barrier layer 16 and is located in the adhesion/diffusion barrier. A metal on the barrier layer 16 and a metal layer 22 on the metal layer 18, and each of the hemorrhoids - '~------" ~;, _ ' - rr ~ one two two; :;• Two ~ ~ _ 39 1353652 between 5 microns and 27 microns. The external circuit may be a semiconductor wafer, a printed circuit board, a flexible board, a substrate containing a ceramic material, a previously formed passive passive device or a glass substrate, and the printed circuit board contains glass fibers, and the flexible board includes a thickness. A polymer layer (eg, polyimine) between 3 microns and 200 microns. Then, after removing the metal layer 18 and the adhesion/diffusion barrier layer 16 which are not under the metal layer 22, a protective layer 32 is formed on the pad 78 and the silicon-containing dielectric layer 14 (for example, a nitrogen-niobium compound layer or nitrogen). The matte layer is exposed on the oxygen oxide compound layer and through only one opening 32a in the protective layer 32. For the method of forming the protective layer 32 and the opening 32a, please refer to the above-mentioned six "methods for forming a protective layer and an opening". The 10F is a protective layer 32 formed on the pad 78 by the first type of bin. The above-mentioned six kinds of "forming the protective layer and the opening" are formed by the above-mentioned description by the opening 32a of the stone layer 14 and located in the opening 32a of the protective layer 32. The content of the method is implemented accordingly. Alternatively, the interface 78 exposed by the bonding wire to the opening 32a or the formation of a scaly metal layer or a metal bump (for example, a gold bump) over the interface 78 exposed by the opening 32a can be used. The 塾78 is connected to an external circuit, wherein the external circuit may be a semiconductor wafer, a printed circuit board, a flexible board, a substrate containing a ceramic material, a previously formed passive passive device or a glass substrate, and the printed circuit board contains glass fibers. The flexible board then comprises a polymer layer (e.g., polyimide) having a thickness between 3 Å and 2 Å. After the last month _ _ ^ to describe the formation of the shy layer 3_2 sensation of the boat akisaki 1353652, then the following three processes can be carried out, described as follows: The first process ~ after the completion of the above protective layer 32 or opening 32a step, then cut The semiconductor substrate 2 is formed to form a plurality of wafers, and the wafers may be further bonded to a metal line exposed by one of the openings 32a of the protective layer 32 by one end of a wire bonding wire (the material of which includes gold, copper or aluminum) through a wire bonding process. 24 (for example, a copper layer, a nickel layer or a gold layer of the metal line 24), and the other end is connected to a lead of a leadframe or a pad, which may be another One of the semiconductor wafer pads, one of the pads above the other semiconductor substrate, one of the pads above the organic substrate, one of the pads above the ceramic substrate, one of the pads above the substrate, and one of the upper of the glass substrate A pad or a pad above a soft board, and the board includes a polymer layer having a thickness between 30 and 200 microns. The wire bonding strength used in the wire bonding process of the present invention is, for example, between 1 〇〇 millinewton (mN) to 1,000 millinewtons, between 200 millinewtons to 1,000 millinewtons, or between 200 millimeters. Newton to between 500 millinewtons. Finally, after the wire bonding process is completed, a polymer material, such as epoxy or polyimide, is formed to coat the wire. Further, when the metal line 24 is a reconfigurable line (RDL), the position at which the wire bonding wire is bonded to the metal line 24 is different from the position of the metal layer 10 exposed by the opening 14a from a top perspective view. After the second process is completed by the step of forming the protective layer 32 or the opening 32a, the present invention can form another metal line over the protective layer 32 and connect the opening 32a to the violent one--- 1 ~~. 1- · -: ·- : ~ 1353652 The metal. Line 24, under the "Metal line 24 includes two connecting lines 24a, 24b" and "Protective layer 32 system ~ through a type of formation of the protective layer and opening to form i way For the sake of explanation, those skilled in the art can implement the above-described six methods of "forming a protective layer and opening" by the following description, and the metal line 24 is not limited to the two connecting lines. Referring to FIG. 11A, a metal layer 80 having a thickness between 2,000 angstroms and 5,000 angstroms (preferably having a thickness of between 2,500 angstroms and 3,500 angstroms) is formed on the polymer layer 36. The two polymer layer openings 36a are respectively exposed on the two connecting lines 24a, 24b, and the metal layer 80 serves as an adhesion/barrier layer, and functions to provide the connecting lines 24a, 24b and the metal. Good adhesion between the materials and prevents diffusion reactions between the connecting lines 24a, 24b and the metallic material. The material of the metal layer 80 is, for example, selected from the group consisting of titanium, crane, abundance, titanium nitride, titanium alloy, titanium alloy, group, nitride group, complex, copper, copper alloy, gold, town, beginning, and At least one of 钌, 姥, 姥, and silver, or a group formed by, for example, by means of a splash bond or an evaporation. For example, the metal layer 80 may be a titanium layer having a thickness of between 2,000 angstroms and 5,000 angstroms (preferably having a thickness of between 2,500 angstroms and 3,500 angstroms) on the polymer layer 36 and the second polymer. The layer openings 36a are respectively exposed on the copper layers of the two connection lines 24a, 24b; alternatively, the metal layer 80 may have a thickness of between 2,000 angstroms and 5,000 angstroms (preferably, the thickness is between 2,500 angstroms and 3,500 angstroms). A titanium layer is sputtered onto the polymer layer 36 with ==- ------- - · - - - - . . ' T Γ*·.: ~- · · - - ~ - 'T1 --1—' ·'' ··* * - -1ν 42 1353652 The dimerized layer opens σ 3 6a on the recording layers of the two connecting lines 24a, 24b respectively exposed; or 'the metal layer 8G may be the thickness - Titanium layer between 2, _ Å to -5, 〇〇〇 (better thickness is between 2, Å to 3, 5 Å) on the polymer layer 36 The two polymer layer opening shirts are respectively exposed on the two connection lines, the gold layer of 24b; or the metal layer _80 may have a thickness of 2, 559 to 5, and the thickness of the café is 2 2,500 angstroms. To 3,5 (9) angstroms - off alloy layer (10) in polymerization 6 is on the copper layer of the two connection lines 24, 24' exposed by the polymer layer opening σ 36a respectively; or, the metal layer 8 〇 may have a thickness of 2, 〇〇〇 to 5' 〇〇〇 A titanium-tungsten alloy layer between angstroms (preferably having a thickness of between 2 5 (9) angstroms and 3,500 angstroms) is sputtered on the polymer layer 36. The fish is polymerized (four) and the openings are respectively exposed by two connecting lines 2 On the recording layer, or 'metal I 80 can be between 2'_ Å to 5, _ Å (preferably the thickness is between 2 5 (10) angstroms to 3, _ Ai's door of a titanium-tungsten alloy layer The ruthenium is plated on the polymer layer 36 and the two polymer layer openings 36a are respectively exposed on the gold layer of the connection line. The success is formed to a thickness of between 5 angstroms and 2 angstroms (more) The thickness of the crucible is between 75 G and 15 (10) angstroms (4) - the metal layer 7 is on the metal layer 8 , and the metal layer 82 is used as a conductive layer and a seed layer for the electric bond. The manner of forming the metal layer 82 For example, sparking steam, = CVD or eleetrMess plating, etc. Since the metal layer 82 can be beneficial to the subsequent metal layer Therefore, the material of the metal layer 82 may vary with the material of the subsequent metal layer, such as when the plating is formed. The M 8 out of the metal layer 82 (4) ' - . _ —* ** 1353652 The system is made of copper; The metal is formed of gold (Au), and the metal layer 82 is made of gold. When the metal layer of the palladium is formed on the metal layer 82, the material of the metal layer 82 is formed. Palladium is preferred; when the shovel forms a metal layer of platinum on the metal layer 82, the material of the metal layer 82 is preferably platinum; when the shovel is formed of a metal layer of tantalum in the metal layer 82 In the upper case, the material of the metal layer 82 is preferably 铑; when the metal layer of the enamel is formed on the metal layer 82 by electroplating, the material of the metal layer 82 is preferably 钌; when the metal layer is formed by plating When the metal layer 82 is used, the material of the metal layer 82 is preferably ruthenium; when the metal layer formed of nickel is plated on the metal layer 82, the material of the metal layer 82 is preferably nickel.

In summary, when the metal layer 80 is formed by sputtering, the thickness of the titanium layer is between 2,000 angstroms and 5,000 angstroms (preferably, the thickness is between 2,500 angstroms and 3,500 angstroms). The layer 82 may be a gold layer having a thickness between 500 angstroms and 2,000 angstroms (preferably having a thickness between 750 angstroms and 1,500 angstroms) on the titanium layer; or, when the metal layer 80 is When a titanium-tungsten alloy layer having a thickness of between 2,000 angstroms and 5,000 angstroms (preferably having a thickness of between 2,500 angstroms and 3,500 angstroms) is formed by sputtering, the metal layer 82 may be thick. a gold layer between 500 angstroms and 2,000 angstroms (preferably having a thickness of between 750 angstroms and 1,500 angstroms) is sputtered onto the titanium tungsten alloy layer; or, when the metal layer 80 is splashed When the plating method forms a titanium layer having a thickness of between 2,000 angstroms and 5,000 angstroms (preferably, the thickness is between 2,500 angstroms and 3,500 angstroms), the metal layer 82 may have a thickness of between -500 angstroms and 2,000 Å. Between angstroms (better thickness is between 750 angstroms to Γ, 50 (Τ _

44 1353652 A copper layer is sputtered on the titanium layer; or, when the metal layer 80 is formed by sputtering, the thickness is between 2,000 angstroms and 5,000 angstroms (the preferred thickness is When a titanium-tungsten alloy layer is between 2,500 angstroms and 3,500 angstroms, the metal layer 82 may have a thickness of between 500 angstroms and 2,000 angstroms (preferably, a thickness of between 750 angstroms and 1,500 angstroms). A copper layer is deposited on the layer of the alloy. Referring to FIG. 11B, a photoresist layer 84 is formed on the metal layer 82, and the photoresist layer 84 is patterned by exposure and development processes to form a photoresist layer opening 84a in the light. A metal layer 82 is disposed within the resist layer 84 over the two connecting lines 24a, 24b and over the portion of the polymer layer 36. The photoresist layer 84 is, for example, a positive-type photoresist layer, and the photoresist layer 84 is formed by a spin coating method, for example, in the process of patterning the photoresist layer 84. For example, exposure is performed by using a stepper of double (IX) or a contact aligner of one time (IX). In addition, after development, the metal layer 82 exposed by the photoresist layer opening 84a may be cleaned by using a plasma (for example, a plasma containing oxygen ions or a plasma containing a fluoride ion concentration of less than 200 PPM and oxygen ions) to remove the metal. Residual photoresist or other foreign matter on the layer 82 on the surface of the layer 82.

For example, the method of forming the photoresist layer 84 and the patterned photoresist layer 84 of the present invention may be performed by spin coating with a thickness of between 5 micrometers and 30 micrometers (preferably, a thickness of between 7 micrometers and 15 micrometers). A positive-type photoresist layer is on the metal layer 82, and a double (IX) stepper is used to contain two kinds of G-line and Η-line length+, G-line and 1"-line soil wave Hanging 3 has a binding and an I 45 ^53652 line, or a light source with a G-line, a Η line, and an I-line wavelength, illuminating the positive-type photoresist layer for exposure. Then developing the positive-type photoresist through the development process. The layer 'shows the plated pattern to form the photoresist layer opening 84a in the photoresist layer 84 and exposes the metal layer 82 above the two connection lines 24a, 24b and over the portion of the polymer layer 36. The wavelength range is between 434 nm and 438 nm. The wavelength range of the Η line is between 403 nm and 407 nm, and the wavelength range of the I line is between 363 nm and 367. Between the rice. Please refer to Figure 11C for the thickness of the plating to form! A metal layer % between micrometers and 2 micrometers (e.g., between 1 micrometer and 50 micrometers) is on the metal layer 82 exposed by the photoresist layer opening 84a. The preferred thickness of the metal layer 86 is between 2 The micro-layer is between 30 microns and the metal layer 86 may be a single-layer metal structure of gold, copper, silver, palladium, platinum, rhodium, ruthenium, iridium or nickel or a composite layer metal structure composed of the above metal materials. Alternatively, the manner in which the metal layer 86 is formed may also include an electroless plating process. For example, the metal layer 86 may be formed by electroplating to a thickness of between 2 micrometers and 35 micrometers. A gold layer is exposed on the metal layer 82 of the photoresist layer opening "a, such as gold, or A copper layer formed by electroplating having a thickness between 2 micrometers and 35 micrometers is exposed on the photoresist layer opening 84a, such as a copper metal layer 82. Again, the manner in which the metal layer 86 is formed For example, a copper layer having a thickness of between 2 micrometers and 35 micrometers is placed on a metal layer 82 of a material such as copper, and then the thickness of the electricity is between 0.1 micrometers and 10 micrometers (preferably thickness). The system is between 〇丨 micron to 5 nickel layer in this copper layer, the last two plating thickness is Ό.Ό1 &quot;** . ·*^&quot;^·· · Μ &lt; . - — * - —— I - &quot; * \ — — - - - -- 46 1353652 A gold layer between the micro half and 10 microns (preferably between 0.1 microns and 2 mm) is on this town layer. As shown in Fig. 11D, after the metal layer 86 is formed, the photoresist layer 84 is subsequently removed. Further, after the photoresist layer 84 is removed, the plasma may be passed first (for example). The metal layer 86 and the metal layer 82 are cleaned by a plasma containing oxygen ions or a plasma containing a fluoride ion-concentration of less than 200 PPM and oxygen ions, thereby removing photoresist residues on the upper surface of the metal layer 86 and the upper surface of the metal layer 82. Or other foreign matter. Continuing, as shown in FIG. 11E, the metal layer 82 and the metal layer 80 that are not under the metal layer 86 are removed. The manner in which the metal layer 82 and the metal layer 80 are not under the metal layer 86 is removed, for example. It is removed by etching, and the etching method can be divided into dry etching and wet etching, and dry etching includes chemical plasma etching, splash etching (such as sputtering etching using high-pressure argon gas) and chemical gas etching. For example, in wet etching In the aspect, when the metal layer 80 is a titanium-tungsten alloy, it can be removed by etching using a solution containing hydrogen peroxide, and when the metal layer 80 is titanium, it can be removed by etching using a solution containing cyanofluoric acid, and when the metal layer 82 is gold, It can be etched and removed by using an iodine-containing etching solution (for example, an etchant containing potassium iodide); in the dry etching, when the metal layer 80 is titanium or a titanium-tungsten alloy Bf, chlorine-containing electrical etching can be used. The metal layer 82 is removed, and when the metal layer 82 is gold, it can be removed by high-pressure argon gas. Therefore, the present invention can form a metal line 88 on the polymer layer 36 and the two polymer layer openings 36a. The connecting lines 24a, 24b are connected to the two connecting lines 24a, 24b exposed by the two polymer layer openings 36a. The metal lines 88 are formed by a metal layer 80 and a metal layer 82 on the metal layer 80. A metal layer 86 on the metal layer 82 is formed by -47-'--- 1353652. _ See FIG. 11F, the present invention removes the metal layer 82 that is not under the metal layer 86. After the metal layer 80, a polymer layer 90 can be formed over the metal lines 88 and the polymer layer 36, and a polymer layer opening 90a in the polymer layer 90 exposes the metal lines 88. Wherein, the polymer layer 90 is, for example, selected from the group consisting of polyimide, phenylcyclobutene, polyurethane, epoxy resin, polyparaxylene polymer, solder mask material, elastic material or porous dielectric material. One, and the thickness of the hardened polymer layer 90 is, for example, between 2 micrometers and 30 micrometers (preferably, the thickness is between 3 micrometers and 12 micrometers), and the formation includes spin coating and hot pressing. Dry film or screen printing. Bottom to form a polyimine layer on the metal line 88 and the polymer layer 36, and to pattern the content of the polyimide layer as an example of forming and patterning the polymer layer 90, but the skilled person It can be carried out according to the use of other polymer materials (for example, phenylcyclobutene or epoxy resin) according to the following examples. The first method of forming and patterning the polymer layer 90 is by spin coating a spin coating process having a thickness between 4 microns and 60 microns (preferably between 6 microns and 24 microns). The photosensitive polyimide layer is patterned on the metal line 88 and the polymer layer 36, followed by a process of baking, exposing and developing a polyimine layer to form at least one polyimide layer opening. The metal line 88 is exposed in the polyimide layer, and in the process of patterning the polyimide layer, the exposure machine is doubled (IX) to contain G-line and H-line (H- Line) and at least two of the three wavelengths of the I-line (I-line) are exposed to the imine layer, that is, the light bee has a G-line and a plaque at 48 1353652. Line (H-line), containing G line (G-line^I-line, containing H-line and I-line or containing α-line (G-line), The light source of the H-line and the I-line (i_nne) is exposed to the polyimide layer for exposure. Finally, in a nitrogen atmosphere or an oxygen-free environment, the curing process is performed at a temperature of 20 (TC to 290 ° C). Between 290 ° C and 330. (: Or between 330 ° C and 40 (TC hardened polyimide layer, wherein the hardening process is carried out between 30 minutes and 2 hours, and the hardened polyimide layer thickness is between 2 micrometers between 30 micrometers (preferably, the thickness is between 3 micrometers and 12 micrometers). In addition, after hardening the polyimide layer, a plasma containing oxygen ions (A plasma) or containing The plasma having a fluoride ion concentration of less than 200 PPM and oxygen ions removes polymer residues or other foreign matter on the upper surface of the metal line 88 exposed by the opening of the polyimide layer.

The second type of domain-forming polymer; | 9G is a spin coating process with a spin coating thickness between 4 microns and 60 microns (preferably between 6 microns and 24 microns) and sensitized a first polyimine layer on the metal line 88 and the polymer layer 36, followed by sequential baking, exposure and development processes to pattern the first polyimide layer to form at least one first - The polyimide layer opens in the first polyimide layer and exposes the metal line 88, and in the process of patterning the first polyimide layer, the exposure machine is used to contain the G line (G- A line of light, at least two of the three wavelengths, H-line and 丨 (1), illuminate the first polyimide layer for exposure. Continue, in a nitrogen atmosphere or an oxygen-free environment, using a hardening process at a temperature of between 330 ^ or 介:, 49 1353652 c to 4 〇 (r hardened the first polyimine layer between the rc, wherein the hardening process is carried out The time is between 30 minutes and 2 hours, and the hardened first poly-imine layer thickness is between 2 microns and 30 microns (preferably between 3 microns and 12 microns) In addition, after hardening the first polyimine layer, it is possible to select a plasma containing a secret or a plasma containing a concentration of less than 200 PPM and oxygen ions to remove the first layer of polyimine. The polymer residue on the upper surface of the metal line 88 exposed or exposed to the mouth.

Further, the step of forming and patterning the first polyimide layer forms a second polyimide layer on the first polyimide layer and forming at least one second polyimide layer opening | The metal line 88 exposed by the opening of the bismuth iminoimine layer is exposed within the dimeric quinone layer. Therefore, the polymer layer 9 can be composed of the first polyimide layer and the second polyimide layer, and the polymer layer opening 90a can be the second polyimide layer opening itself or by the first The opening of the polyimide layer and the opening of the second polyimide layer are formed. Finally, after hardening the second polyimine layer, the metal containing the oxygen ion or the plasma containing the fluoride ion concentration of less than 200 PPM and the oxygen ion may be used to remove the metal exposed by the opening of the L-polyimine layer. Polymer residue or other foreign matter on the upper surface of line 88. &quot; The third way of forming and patterning the polymer layer 9〇 is based on the second formation and patterning of the polymer layer 90, after forming the second polyimide layer to form a second The polyimine layer continues to form one or more layers of polyimine on the second polyimide layer, ie,

Hi package multi-light process, • .. r ·-ψ· &gt;. 50 1353652 multiple development process and _ complex hardening process. Wherein, after each hardening process, a plasma of i aerobic ions or a plasma containing a fluoride ion concentration of less than 200 PPM and oxygen ions may be selected to remove the upper surface of the metal line 88 exposed by the opening of the polyimide layer. Polymer residue or other foreign matter, or after the last hardening process, using a plasma containing oxygen ions or a plasma containing a fluoride ion concentration of less than 200 PPM and oxygen ions to remove the polyimide layer opening A polymer residue or other foreign matter on the upper surface of the metal line 88. After the above process is completed, the semiconductor substrate 2 can then be diced to form a plurality of wafers. In addition, these wafers can be further connected to external circuits in a manner that is described below. a. These wafers can be connected to an external circuit by bonding a wire conductor to the metal line 88 exposed by the polymer layer opening 90a through a wire bonding process. b. Before cutting the semiconductor substrate 2, forming a tin-containing metal layer over the metal line 88 exposed by the polymer layer opening 90a, and after cutting the semiconductor substrate 2 to form a plurality of wafers, connecting the wafers through the tin-containing metal layer External circuit. Wherein, the tin-containing metal layer is, for example, a tin-lead alloy, a tin-silver alloy, a tin-silver-copper alloy or a lead-free alloy. For example, tin-lead alloys have their tin/lead ratio adjusted according to demand. The common ratio of tin-lead is 90/10, 95/5, 97/3, 37/63. c. Before cutting the semiconductor substrate 2, a metal bump is formed over the metal line 88 exposed by the polymer layer opening 90a, and is cut, and the semiconductor wafer is named as a plurality of wafers. Cangjie 1353652 Bumps) Connect these wafers to external circuits. Ray. * — ------------. 8. The external electrical device mentioned above is, for example, a semiconductor wafer, a printed circuit board (PCB) containing glass fibers, and having a thickness between 30 micrometers and 200 micrometers. A soft plate of a polymer layer (such as polyimide), a substrate containing a ceramic material, a glass substrate or a discrete passjve device. After the third step of forming the protective layer 32 or the opening 32a, please refer to FIG. 12A to form a thickness between 〇〇1 μm and 3 μm (preferably, the thickness is between G. a metal layer 92 of between G1 micrometers and 1 micrometer is on the protective layer 32 and the metal line 24 exposed by the opening 32a, wherein the metal line 24 is, for example, a reconfiguration line (RDL), and is viewed from a top perspective view. The position of the metal line 24 exposed by the opening 32a is different from the position of the metal layer 1〇 exposed by the opening, and the metal layer 92 acts as an adhesion/barrier layer, and functions to provide a metal line and a metal material. Good adhesion and prevent diffusion reaction between the metal line 24 and the metal material. The material of the metal layer 92 is, for example, selected from the group consisting of titanium, tungsten, quartz, titanium nitride, titanium tungsten alloy, niobium vanadium alloy, button, nitride button, chromium, copper, chrome steel alloy, gold, lock, surface, handle At least one of, or a group of, or a group of silver, formed by, for example, sputtering or evaporation. For example, the metal layer 92 may be a titanium layer that affects the thickness of the crucible (between Π micrometers and 3 microliters (preferably, the thickness is between 0.01 micrometers and i micrometers). --------- -·__ 52 1353652 on the layer; or, the metal layer 92 may be between 0.01 microns and 3 microns in thickness (preferably between 0.01 microns and 1 micron) a titanium layer is sputtered on the protective layer 32 on the nickel layer of the metal line 24 exposed by the opening 32a; or the metal layer 92 may be between 0.01 micrometers and 3 micrometers in thickness (preferably thickness) a layer of titanium between 0.01 micrometers and 1 micrometer is sputtered onto the gold layer of the metal line 24 exposed on the protective layer 32 and the opening 32a; alternatively, the metal layer 92 may have a thickness of 0.01 micron to A titanium-tungsten alloy layer between 3 microns (preferably having a thickness between 0.01 microns and 1 micron) is sputtered onto the protective layer 32 and the copper layer of the metal line 24 exposed by the opening 32a; or, metal Layer 92 can be a titanium-tungsten alloy layer having a thickness between 0.01 microns and 3 microns (preferably between 0.01 microns and 1 micron) Sputtered on the protective layer 32 on the nickel layer of the metal line 24 exposed by the opening 32a; alternatively, the metal layer 92 may have a thickness between 0.01 micrometers and 3 micrometers (preferably, the thickness is between 0.01 micrometers and 1 micrometer) A titanium-tungsten alloy layer between the micrometers is sputtered onto the gold layer of the metal line 24 exposed on the protective layer 32 and the opening 32a. Further, the thickness is formed between 0.005 micrometers and 2 micrometers (preferably thick) A metal layer 94 having a degree between 0.1 micrometers and 0.7 micrometers is on the metal layer 92. The metal layer 94 serves as a conductive layer and a seed layer during electroplating. The metal layer 94 is formed by sputtering, for example. Evaporation, physical vapor deposition or electroless plating, etc. Since the metal layer 94 can facilitate the subsequent metal layer setting, the material of the metal layer 94 will vary with the material of the subsequent metal layer, such as when forming materials by electroplating. When the metal layer of copper is on the metal layer 94, the material of the metal layer 94 is preferably copper; when the metal layer of 53 1353652 is formed on the metal layer 94 by electroplating, the material of the metal layer 94 is made of gold. good.

In summary, when the metal layer 92 is formed by sputtering, the thickness of the titanium-containing metal layer is between 0.01 micrometers and 3 micrometers (preferably, the thickness is between 0.01 micrometers and 1 micrometer). The metal layer 94 may be a copper layer having a thickness between 0.005 micrometers and 2 micrometers (preferably having a thickness between 0. 1 micrometer and 0.7 micrometer) on the titanium-containing metal layer; or, when When the metal layer 92 is formed by sputtering, a thickness of between 0.01 μm and 3 μm (preferably between 0.01 μm and 1 μm), the entire layer 94 may be a thickness layer. a copper layer between 0.005 micrometers and 2 micrometers (preferably having a thickness between 0.1 micrometers and 0.7 micrometers) is sputtered onto the titanium layer; or, when the metal layer 92 is formed by sputtering When a titanium-tungsten alloy layer having a thickness of between 0.01 micrometers and 3 micrometers (preferably having a thickness between 0.01 micrometers and 1 micrometer) is used, the metal layer 94 may have a thickness of between 0.005 micrometers and 2 micrometers. A copper layer having a thickness of between 0.1 micrometers and 0.7 micrometers is sputtered onto the titanium-tungsten alloy layer.

Referring to FIG. 12, a photoresist layer 96 is formed on the metal layer 94, and the photoresist layer 96 is patterned through an exposure and development process to form at least one photoresist layer opening 96a in the photoresist layer 96 and exposed. The metal layer 94 above the metal line 24 exposed by the opening 32a is formed, and in the process of forming the photoresist layer opening 96a, for example, a stepper or a double (IX) alignment is utilized. The exposure aligner is used for exposure. Then, referring to FIG. 12C, a diffusion barrier layer 98 is formed on the metal layer 94 exposed by the photoresist layer opening 96a, and the diffusion barrier layer 98 is formed by using a diffusion barrier layer 98. Plating·~ · — ~ — — —1 &quot;― 1 —·· - · :..厂....... — —*· ~ ~ ^ *~ - -: 54 ....... 1353652 Thickness A copper layer between 0:5 microns and 10 microns is on the metal layer 94 of material, such as copper, and a nickel layer having a thickness between 01 microns and _5 microns is then plated over the copper layer. Therefore, the diffusion barrier layer 98 may be composed of a copper layer and a nickel layer on the copper layer. Next, a tin-containing metal layer 100 having a thickness between 1 micrometer and 500 micrometers is formed on the diffusion barrier layer 98 in the photoresist layer opening 96a. The preferred thickness of the tin-containing metal layer 100 is 3 The manner in which the tin-containing metal layer is formed between micrometers and 25 micrometers is, for example, electroplating, electroless plating, or screen printing. In addition, the tin-containing metal layer 100 is, for example, tin-lead alloy (tm Iead all〇y), tin-silver alloy, tin-silver-copper alloy (Q0pper all〇y) or lead-free alloy (lead-free alloy). ). Taking tin 2 alloy as an example, the tin/lead ratio can be adjusted according to the demand, and the common ratio of tin to lead is 90/10, 95/5, 97/3, 37/63. As can be seen from the above, the diffusion barrier layer 98 is located below the tin-containing metal layer 1'. The diffusion barrier layer 98 includes, for example, a thickness of between G1 micrometers and 5 meters. (10) Next, and a copper layer having a thickness between 0.5 and 10 microns is under the recording layer, and the copper layer is formed over the metal line 24 exposed by the opening 32a. Solder The present invention can also be formed on the diffusion barrier layer 98 - a smear layer (so is not shown in the thief tablelaye), ::: a subsequent tin-containing metal layer 1 〇. The tin between the diffusion barrier layer and the anchor layer is made of gold, steel, tin alloy, tin-silver full-mouth gold-silver-copper-copper alloy or lead-free alloy, etc. Figure 12D Dry, household Λ - after forming a tin-containing metal layer 100, . I.. _Τ'- - Release. Insult ^ 1-^. • · · · · · ~τ·- . .1. A. 55 1353652 Continue The photoresist layer 96 is removed. Continuing to remove the metal layer 94 and the metal layer 92 that are not under the tin-containing metal layer 100. The manner of removing the metal layer 94 and the metal layer 92 is, for example, removed by etching, and the etching method can be divided. For dry etching and wet etching, another dry etching includes chemical plasma etching, splash etching (such as sputtering with high pressure argon) and chemical gas etching. For example, in wet etching, when the metal layer 92 is a Chinhe alloy When the metal layer 92 is titanium, it can be removed by etching using a solution containing cyanofluoric acid; in the dry etching, when the metal layer 92 is titanium or titanium tungsten alloy, it can be used. Chlorine-containing plasma is removed by etching. See Figure 12E for removal. After the metal layer 94 and the metal layer 92 under the tin-containing metal layer 100, a reflow process may be selected to cause the tin-containing metal layer 100 to reach a melting point and cohere into a spherical shape. However, the present invention may also be performed first. The reflow process is such that the tin-containing metal layer 100 reaches the melting point and is internally spherical, and then the metal layer 94 and the metal layer 92 not under the tin-containing metal layer 100 are removed; or the present invention may not be subjected to the reflow process. The reflow process is not performed until the tin-containing metal layer 100 is connected to the external circuit. After the above process is completed, the semiconductor substrate 2 can be subsequently cut to form a plurality of wafers, and the wafers can be connected through the tin-containing metal layer 1 An external circuit, such as a semiconductor wafer, a printed circuit board containing glass fibers, a soft board containing a polymer layer having a thickness of between 30 micrometers and 200 micrometers, a substrate containing a ceramic material, or a preformed surface. Passive components, etc. The above description is based on the characteristics of the drink _ _ _ camp 叼 4, its purpose is 56 1353652 Γ ϋ ϋ 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该To - implement.,: not limited -. ····-..···-. · · · _ - _ - . . . . . . . . . . . . . . . . . . . The equivalent modification or modification of the spirit of the disclosure shall be included in the scope of the patent application described below. [Simple description of the schema] Schematic description: Figure 1 is a crystal of the invention Schematic diagram of a circular cross section. Fig. 2A to Fig. 2J are diagrams showing a process profile of a metal circuit according to the present invention. &quot; Figs. 3A to 3F are schematic cross-sectional views showing a process for forming a protective layer and an opening thereof according to the present invention. . 4A to 4F are schematic cross-sectional views showing a process for forming a protective layer and an opening thereof according to the present invention. Fig. 5 is a schematic cross-sectional view showing a process for forming a protective layer and an opening thereof according to the present invention. 6A to 6F are schematic cross-sectional views showing a process for forming a protective layer and an opening thereof according to the present invention. Figure 7 is a schematic cross-sectional view showing the formation of a protective layer and its opening. 8A to 8F are schematic views of a process section for forming a protective layer and an opening thereof according to the present invention. 9A to 9G are schematic cross-sectional views showing a process of an embodiment of the present invention. 10A to 10F are schematic cross-sectional views showing a process of an embodiment of the present invention. 1353652 11AJ to 11th are schematic views of a process section of a main embodiment of the present invention. ' - 12A to 12E are schematic cross-sectional views showing a process of an embodiment of the present invention. Description of the figure:

2 semiconductor substrate 6-wire final structure 10 metal layer 14 containing germanium dielectric layer 15 photoresist layer.

4 semiconductor element 8 dielectric layer 12 metal plug 14a opening 15a photoresist layer opening 1 8 metal layer 20a photoresist layer opening 24 metal line 24b connecting line 28 oxon compound layer 32 protective layer 34 photoresist layer 3 6 polymer layer 38 arsenide compound layer 42 spin-on glass layer 46 photoresist layer 48 polymer layer 50 polymer layer 16 adhesion/diffusion barrier layer 20 photoresist layer 22 metal layer 24a connection line 26 yttrium compound layer 3 〇 矽Compound layer 32a opening 34a photoresist layer opening 36a polymer layer opening 40 oxon compound layer 44 arsenide compound layer 46a photoresist + layer opening 48a polymer layer opening 1353652

'52...the nitrogen is hard and the second layer is -

- * ~ , , +r · . *· ·3ΐ^, two * - «C • . - - . -, . . . : - r 56 spin-on glass layer 60 nitride compound layer 62a photoresist layer opening 64a polymer layer opening 68 arsenide compound layer 70a photoresist layer opening 72a polymer layer opening 74a photoresist layer opening 76a photoresist layer opening 80 metal layer 8 4 photoresist layer 86 metal layer 90 polymer layer 92 metal layer 96 light Resistive layer 98 diffusion barrier layer 54 oxygen chopping compound layer 58 oxygen dream compound layer 62 photoresist layer 64 polymer layer 66 polymer layer _ 70 photoresist layer 72 polymer layer 74 photoresist layer 76 photoresist layer 78 pad 82 metal layer 84a photoresist layer opening 88 metal line 90a polymer layer opening 94 metal layer 96a photoresist layer opening 100 tin-containing metal layer

Claims (1)

Patent application No. 096122418 _Application for patent scope replacement ^〇〇〇年十十, application patent scope a semiconductor substrate; a first dielectric layer, a wiring structure, over the semiconductor substrate; a plurality of first metal layers over the first dielectric layer, the wiring structure bonding copper layer; The first metal layer includes a plurality of second dielectric layers between the first metal layers; a third dielectric layer is located above the circuit structure; and the third dielectric layer and the first metal of the circuit Above the line, the first metal line contacts a first area of the line structure, and the first area is connected via a first opening in the third dielectric layer, the first metal line includes a second a metal layer and a third metal layer above the second metal layer, without any dielectric layer between the first metal layer and the third metal layer; a second metal line located in the third dielectric layer And above the circuit structure, the second metal line contacts a second area of the line structure, and the second area is connected via a second opening in the third dielectric layer, the second gold The circuit includes a fourth metal layer and a fifth metal layer above the fourth metal layer, and the dielectric layer 143044-1000331.doc 1353652 is not interposed between the fourth metal layer and the fifth metal layer. Located above the first metal line, the second metal line, and the third dielectric layer, the insulating layer contacts sidewalls of the third metal layer and sidewalls of the fifth metal layer, the insulating layer includes a nitride layer; And a third metal line over the insulating layer, the first metal line and the second metal line, the third metal line connecting the first metal line via a third opening in the insulating layer, and contacting a surface area of the first metal line connecting the second metal line via a fourth opening in the insulating layer and contacting a surface area of the second metal line, the first metal line The first metal line is connected via the third metal line. 2. The wafer of claim 1, wherein the semiconductor substrate is a stone substrate. 3. The wafer of claim 1, further comprising at least one metal oxide semiconductor (M?s) element in or on the semiconductor substrate. 4. The wafer of claim 2, wherein the second metal layer is only under the second metal layer, and the fourth metal layer is only under the fifth metal layer. 5, such as the scope of patent application! The wafer of claim 7, wherein the circuit structure further comprises a plurality of metal plugs connecting the first metal layers. 6. The wafer of claim i, wherein the second dielectric layer comprises a material having a dielectric constant value (k) between 5 and 3. The wafer of claim 2, wherein the material of the second dielectric layer comprises an oxonium compound, a nitrogen hydrazine compound or a oxynitride compound. The wafer of claim 1, wherein the first metal layer has a thickness of less than 3 microns. 9. The wafer of claim 1, wherein the first metal layers further comprise a plurality of barrier layers under the electro-mineralized copper layers. 1. The wafer of claim 9, wherein the barrier layers are selected from the group consisting of a button, tantalum nitride or titanium nitride. 11. The wafer of claim 1, wherein the third dielectric layer comprises a layer of a ruthenium compound or a layer of a ruthenium oxynitride compound. 12. The wafer of claim 2, wherein the first metal line further contacts a third region of the line structure and the third portion is connected via a fifth opening in the third dielectric layer a region, the first region being connected to the third region via the first metal line. The wafer of claim 2, wherein the thickness of the second metal layer is between 0.03 micrometers and 〇.5 micrometers, and the thickness of the fourth metal layer is between 0.03 micrometers and 〇. Between .5 microns. 14. The wafer of claim 2, wherein the material of the second metal layer and the fourth metal layer comprises titanium, titanium tantalum alloy, nitride, or a group. 15. The wafer of claim 3, wherein the third metal layer has a haze system between 5 microns and 25 microns, and the thickness of the fifth metal layer 143044-1000331.doc 1353652 is Between 5 microns and 25 microns. The wafer of claim 1, wherein the third metal layer comprises a copper layer, a nickel layer or a gold layer. 17. The wafer of claim 1, wherein the fifth metal layer comprises a plated metal layer. 18. The wafer of claim 1, wherein the first metal line and the second metal line contact an upper surface of the third dielectric layer. 19. The wafer of claim 1, wherein the insulating layer further comprises an oxonium compound layer. 20. The wafer of claim 1, wherein the nitride layer is a layer of a ruthenium nitride compound. 21. The wafer of claim 1, further comprising a polymer layer between the insulating layer and the third metal line. 22, such as the scope of patent application! The wafer of the item further includes a polymer layer over the second metal line. 23. The wafer of claim 1 further comprising a polymer layer on the insulating layer and between the first metal line and the second metal line. 24. The wafer of claim 1, wherein the third opening has a maximum transverse dimension of between 2 microns and 30 microns, and the fourth opening has a maximum transverse dimension of between 2 microns and Between 30 microns. 25. The wafer of claim 3, wherein the third metal -4- 143044-1000331.doc 26 circuit comprises a sixth metal layer, a sub-layer on the sixth metal layer, and a seventh metal layer on the seed layer, the metal layer and the seed layer being located only below the seventh metal layer, the seventh metal layer having a thickness between 2 microns and 3 microns. The wafer of claim 25, wherein the material of the sixth metal layer comprises titanium, titanium nitride, titanium tungsten alloy, tantalum, nitride, or copper alloy. 27, 28, 29, 30, 31, 32, 33. The wafer of claim 25, wherein the material of the seed layer comprises copper. The wafer of claim 25, wherein the seventh metal layer comprises a copper layer, a gold layer or a nickel layer. The wafer of claim 1, wherein the third metal line comprises a --key metal layer. The wafer of claim 29, wherein the electrographic metal layer comprises a copper layer having a thickness of between 2 microns and 35 microns. The wafer of claim 1, further comprising a metal bump above the second metal line. The wafer of claim 1, further comprising a tin-containing metal layer above the first metal line. A wafer 'comprising: a semiconductor substrate; a first damascene metal layer over the semiconductor substrate, the first damascene metal layer comprising a copper layer; 143044-1000331.doc 1353652 a second damascene metal layer Located above the semiconductor substrate; a germanium-containing dielectric layer over the semiconductor substrate, the first damascene metal layer and the second damascene metal layer; a first metal line on the germanium-containing dielectric layer and the first Above the damascene metal layer, the first metal line contacts the &quot;surface area of the first damascene metal layer, and the first damascene metal layer is connected via a first opening in the shatter-containing dielectric layer, the first The metal line includes a first metal layer and a first metal layer above the first metal layer, the first metal layer is only under the second metal layer, and there is no between the first metal layer and the second metal layer Any dielectric layer; a first metal line over the stone-containing dielectric layer and the second inlaid metal layer, the second metal line contacting the second inlay gold a surface region of the layer and connecting the second damascene metal layer via a second opening in the germanium-containing dielectric layer, the second metal line including a third metal layer and over the third metal layer a fourth metal layer, the third metal layer is only under the fourth metal layer, and there is no dielectric layer between the third metal layer and the fourth metal layer; an insulating layer is located on the first metal line, Above the cut dielectric layer, the insulating layer includes a gold layer; and a third metal line 'is located on the insulating layer, the first metal line 143044-1000331.doc -6 - and the second metal line The third metal line is connected to the first metal line via a third opening in the insulating layer, and contacts a surface area of the first metal line, the third metal line passing through a first layer located in the insulating layer The fourth opening connects the second metal line 'and contacts a surface area of the second metal line'. The first metal line connects the second metal line via the third metal line. 34. The wafer of claim 33, wherein the semiconductor substrate is a broken substrate. 35. The wafer of claim 33, further comprising at least one metal oxide semiconductor (MOS) component located in or above the semiconductor substrate. The wafer of claim 33, wherein the insulating layer contacts a sidewall of the second metal layer and a sidewall of the fourth metal layer. 37. The wafer of claim 33, further comprising a plurality of fifth metal layers and a plurality of dielectric layers between the semiconductor substrate and the germanium containing dielectric layer. 38. The wafer of claim 33, wherein the first inlay metal layer further comprises a barrier layer under the copper layer. 39. The wafer of claim 38, wherein the material of the barrier layer comprises a button, tantalum nitride or cobalt nitride. 40. The wafer of claim 33, wherein the electric layer comprises a layer of a ruthenium compound or a layer of a ruthenium oxynitride compound. 41. The wafer of claim 33, further comprising a third damascene metal layer over the semiconductor substrate, the germanium containing dielectric layer being over the third damascene metal layer, the first metal trace Contacting a surface region of the third damascene metal layer, and connecting the third damascene metal layer via a fifth opening in the germanium-containing dielectric layer, the first damascene metal layer connecting the first metal via Three inlaid metal layers. 42. The wafer of claim 33, wherein the thickness of the first metal layer is between 微米3〇 and 〇·5 microns, and the thickness of the third metal layer is between 〇. 〇 3 microns to 〇 · 5 microns. The wafer of claim 33, wherein the material of the first metal layer and the third metal layer comprises titanium, titanium tungsten alloy, nitrogen oxide, or a group. 44. The wafer of claim 33, wherein the genus layer has a thickness between 5 microns and 25 microns and the fourth metal layer has a thickness between 5 microns and 25 microns. 45. The wafer of claim 33, wherein the &quot;&quot;&quot;--------------------------------------------------------------------------------------- a wafer, wherein the fourth metal layer comprises a layer of electricity copper. 47. The wafer of claim 33, wherein the genus line and the second metal line are in contact with the bismuth-containing dielectric layer 143044-1000331.doc 48, as in claim 33 The wafer, wherein the insulating layer further comprises a layer of an oxygen compound. 49. The wafer of claim 33, wherein the nitride layer is a gas-compounding compound layer. 50. The wafer of claim 33, further comprising a polymer layer between the insulating layer and the third metal line. 51. The wafer of claim 33, further comprising a polymer layer over the third metal line. 52. The wafer of claim 33, further comprising a polymer layer on the insulating layer and between the first metal line and the second metal line. 5. The wafer of claim 3, wherein the third opening has a maximum lateral dimension of between 2 microns and 30 microns, and the fourth opening has a maximum transverse dimension of between 2 microns and Between 3 〇 micron. 54. The wafer of claim 33, wherein the third metal line comprises a fifth metal layer, a sub-layer on the fifth metal layer, and a sixth metal layer on the seed layer. The fifth metal layer and the seed layer are located only under the sixth metal layer, and the sixth metal layer has a thickness of between 2 micrometers and 3 micrometers. 55. The wafer of claim 54, wherein the material of the metal layer comprises titanium, titanium nitride, titanium tungsten alloy, tantalum, nitride, or copper alloy. The wafer of claim 54, wherein the material of the seed layer comprises copper. 57. The wafer of claim 54, wherein the sixth metal layer comprises a copper layer, a gold layer or a recording layer. 58. The wafer of claim 33, wherein the third metal line comprises an electroplated copper layer having a thickness between 2 microns and 35 microns. 59. The wafer of claim 33, further comprising a metal bump above the second metal line. 60. The wafer of claim 33, further comprising a tin-containing metal layer over the third metal line. 10- 143044-1000331.doc