1352128 100年Ό7月2〇日 L------------- 六、發明說明： 【發明所屬之技術領域】 [0001] 本發明係關於薄膜製程領域，特別涉及一種具有鍍骐膜 厚監控功能之鍍膜設備及其鍍膜方法。 【先前技術】 [0002] 目前，薄膜製程技術廣泛應用於半導體工業及精密機械 上’由於利用薄膜製程技術所生產之產品具有很高附加 價值，使薄膜製程技術與薄膜材料被廣泛應用於研究及 實務，同時帶來鍵膜技術之迅速發展。通常，鍵獏方法 主要包括離子鍍膜法、射頻磁控濺鍍、真空蒸發法、化 學氣相沈積法。然而，隨著積體電路之密集及微型化， 精密機械之精度提昇，對於鍍膜厚度要求愈漸嚴苛。例 如有些濾光薄膜要求薄膜層數高達數十層之多，從而使 得薄膜鍍層厚度監控成為一大難題。 [0003] 對於薄膜鍍層厚度監控，光學監控係高精密鍍膜製程申 所常用之較佳監控方式，並分為直接於工件上進行監控 或間接於一單獨監控試片上進行監控，後者靈活性強， 如採用石英監控晶片來監控及量測鍍膜厚度，其能對薄 膜沈積厚度進行實時監測，基本原理為：一定質量之物 質沈積於石英晶片上，其共振頻率之改變量為：Af = _ 2 2f〇 △m/ACup/·5: ;其中，、為石英晶片之初 始共振頻率；A為表面積；p為石英的密度 (2· 648gcm 3)。該公式中c係與石英晶體有關的常數， 其在鍍膜過程中將保持不變；則在一定範圍内，石英晶 片共振頻率之改變與沈積於其表面之莫爾量變化呈線性 094117367 表單編號A0101 第4頁/共19頁 1003263264-0 100年07月20日修正替換頁 1352128 變化；因而，通過監測石英晶片共振頻率之改變即可監 控沈積於其表面之鍍膜膜厚。 [〇〇〇4] 先前技術提供一種鍍膜設備，其包括一馬達；一第一齒 輪，其係轴設於該馬達之轴心；至少二第二齒輪，其係 分別與該第一齒輪嚙合；至少二基板承載座，其係分別 軸設於各第二齒輪之軸心；一隔板，其係設於該等第二 齒輪與該等基板承載座之間，且該隔板之一側面至少設 有二遮板支架，各遮板支架之一端部係固設於該隔板， 且其另一端部係朝該基板承載座之設置方向延設；以及 一鍍膜源，其係與該等基板承載座相對而設。鍍膜設備 之光學監控單元係鄰設於該等基板承載座之一。該方法 僅通過遮板來遮擋欲鍍膜較薄之區域，從而產生厚度不 連續之膜層，惟其係為單層膜之不連續厚度之控制，通 常，對於不同光學元件，其相應設計薄膜厚度需求不同 ，而在監控波長範圍受限制下，所能監測鍍膜厚度會受 限制，因而難以滿足多層薄膜厚度多樣化之產品，同時 難以對該多樣化薄膜厚度進行精密控制。 [0005] 有鑑於此，有必要提供一種能適用於鍍膜厚度多樣化且 易於精密控制之鍍膜設備實為必要。 【發明内容】 [0006] 以下，將以若干實施例說明一種能適用於鍍膜厚度多樣 化且易於精密控制之鍍膜設備。 [0007] 以及通過實施例說明一種鍍膜方法。 [0008] 為實現上述内容，提供一種鍍膜設備，其包括：一承載 094117367 表單編號A0101 第5頁/共19頁 1003263264-0 1352128 100年07月20日核正替換百 裝置，所述承載裝置具有一旋轉軸及一承載平台，所述 承載平台上設置有複數承載座，所述複數承載座用以承 載複數欲鍍膜之工件；一鍍膜源，其與所述承載裝置相 對而設，所述鍍膜源係蒸鍍源、濺鍍源及靶材中的一種 或幾種；以及一監控裝置，其與所述鍍膜源相對並靠近 於所述工件設置，所述監控裝置包括至少一監控晶片及 滑動元件，所述監控晶片位於所述滑動元件的一端，所 述監控晶片相對所述鍍膜源而設，以使所述鍍膜源對所 述工件鍍膜之同時對所述監控晶片亦鍍膜，其中，所述 監控晶片係石英晶片或光學玻璃晶片，所述滑動元件與 所述旋轉軸沿所述旋轉軸之軸向滑動連接，用於鍍膜時 動態的調整監控晶片相對於鍍膜源之距離，從而所述監 控晶片之鍍膜厚度與所述工件之鍍膜厚度成一比值。 [0009] 其中，所述鍍膜設備進一步包括至少一測試組件，其與 該鍍膜源相對而設，並設置於鍍膜源與承載座之間。 [0010] 所述測試組件至少包括一能動態調整之測試晶片；所述 測試晶片採用石央晶片或光學玻璃晶片。 [0011] 所述監控晶片之鍍膜厚度與工件之鍍膜厚度所成比值與 所述監控晶片相對於鍍膜源之距離成反比例關係；所述 比值介於0. 8〜2之問。 [0012] 所述承載裝置採用傘具式或行星式承載裝置；而所述複 數承載座均勻分佈於所述傘具式承載裝置相對於鍍膜源 之表面或行星式承載裝置相對於鍍膜源之表面。 [0013] 以及，一種鍍膜方法，其包括以下步驟： 094117367 表單编號Α0101 第6頁/共19頁 1003263264-0 1352128 100年07月20日梭正替換頁 [0014] 提供一上述之鍍膜設備； [0015] 將複數欲鍍膜之工件置於所述承載裝置之複數承載座上 t [0016] 對所述工件及所述監控晶片鍍膜，同時通過調整所述滑 動元件沿所述旋轉軸軸向滑動，調整所述監控晶片相對 於鍍膜源之距離，進而改變所述監控晶片之鍍膜厚度與 所述工件欲鍍膜厚度所成之比值，從而使有利於利用所 述監控晶片監控所述工件上欲鍍膜厚度； [0017] 重複前一步驟，直到所述工件鍍上預定厚度之薄膜。 [0018] 其中，所述鍍膜方法進一步包括利用一測試組件初步監 控工件鍍膜厚度及鍍膜源之鍍率；所述測試組件至少包 括一能動態調整之測試晶片；其採用石英晶片或光學玻 璃晶片。 [0019] 所述工件欲鍍膜厚度增大時，所述監控晶片相對於鍍膜 源之距離減小，使得所述監控晶片之鍍膜厚度與工件之 鍍膜厚度之比值增加；所述工件欲鍍膜厚度降低時，增 加所述監控晶片相對於鍍膜源之距離，使得所述監控晶 片之鍍膜厚度與工件之鍍膜厚度之比值降低；所述比值 介於0. 8〜2之間》 [0020] 與先前技術相較，本實施例提供之鍍膜設備具有一可動 態滑動之監控晶片，當欲鍍工件固定時，通過動態調整 監控晶片相對於鍍膜源之距離，來調整監控晶片上所鍍 膜厚度，以改變監控晶片之鍍膜厚度與欲鍍於工件上薄 膜厚度之比值，使監控晶片適應於監控新的欲鍍膜厚度 094117367 表單編號A0101 第7頁/共19頁 1003263264-0 1352128 100年07月20日核正替換頁 ，因而，本實施例之鍍膜設備可適應產品膜厚多樣化， 特別適用於多層鍍膜；而且該比值在實際應用中較易於 精密控制，並通過動態調整監控晶片相對於鍍膜源之距 離，以實現對工件不同鍍膜厚度進行精確控制。 [0021] 本實施例提供之鍍膜方法利用設備可動態滑動之監控晶 片，在鍍膜過程中，可通過調整該監控晶片相對於鍍膜 源之距離，從而可對工件鍍膜厚度進行即時監控，實現 工件鍍膜厚度之精密控制。 【實施方式】 [0022] [0023] 下面結合附圖對本發明作進一步詳細說明。 請一併參閱第一圖及第二圖，為本技術方案實施例提供 之鍍膜設備及承載裝置結構示意圖。鍍膜設備1包括一工 件承載裝置10，其具有複數承載座11，用於承載欲鍍之 工件12 ; —鍍膜源20，其與所述工件承載裝置10相對而 設；以及一監控裝置30，其與鍍膜源20相對而設，其相 對於鍍膜源20之距離可隨著鍍膜厚度變化作出相應調整 ，以改變所述監控裝置中監控晶片31之鍍膜厚度與工件 12之鍍膜厚度之比值。鍍膜設備1還可包括至少一測試組 件40，其與該鍍膜源20相對而設，並設置於鍍膜源與承 載座之間。整個鍍膜設備1可置於一真空腔體50内。 [0024] 所述承載裝置10可採用傘具式或行星式結構。本實施例 採用行星式結構。承載裝置10具有一旋轉軸13及一承載 平台14，而複數承載座11則設置於承載平台14上，並均 勻分佈於以該旋轉軸13為中心之一定半徑之承載圓週15 094117367 上，或者分多層環繞於旋轉軸13周圍；承載圓週15之半 表單編號A0101 第8頁/共19頁 1003263264-0 100年07月20日修正替換頁 1352128 徑視承載座11數量而定，承載座11數量較少時，半徑相 應較小；而承載座11數量較多時，半徑也要相應增加， 以能均勻佈置該等承載座11，從而能同時對較多工件12 進行鍍膜。本實施例採用兩個承載圓週15，共具有24個 承載座11，其上分別承載有一欲鍍膜之工件12。 [0025] 所述鍍膜源20與所述承載裝置10相對而設；該鍍膜源係 可採用蒸鍍源、濺鍍源'靶材。當需鍍多層薄膜時，其 通常包含多種材質薄膜，因而，鍍膜源可相應包括多種 鍍膜源，則鍍膜源20可採用多個鍍源或靶頭。 [0026] 所述監控裝置30可包括監控晶片31及滑動元件32 ;監控 晶片31可採用石英晶片或光學玻璃晶片；滑動元件32可 沿旋轉軸13軸向滑動，以調整監控晶片31之位置，從而 動態地調整監控晶片31相對於鍍膜源20之距離。本實施 例中，監控晶片31及工件12均相對鍍膜源20而設，對工 件12鍍膜之同時，監控晶片31上亦相應鍍上一定厚度薄 膜，因而，監控晶片31之鍍膜厚度與工件12之鍍膜厚度 成一定比值。通常，鍍膜時間恆定時，監控晶片31及工 件12所鍍膜層之厚度與其相對於鍍膜源20之距離成反比 ，即監控晶片31及工件12相對鍍膜源20之距離越近，其 上所鍍膜層越厚，因而，當工件12位置固定，監控晶片 31及工件12之鍍膜厚度比值可由監控晶片31相對鍍膜源 20之距離遠近來調整。如需於工件12鍍上一定厚度單層 薄膜時，根據監控晶片31及工件12鍍膜厚度所成比值， 通過監控晶片31監控其自身鍍膜厚度來間接控制工件12 上鍍膜厚度；如需於工件12上鍍多層薄膜時，按上述同 094117367 表單編號A0101 第9頁/共19頁 1003263264-0 1352128 100年07月20日核正替换百 樣方法鍍上第一膜層後，第二膜層厚度有變化時，則調 整監控晶片31相對於鍍膜源20之距離，較厚時就調近距 離，使監控晶片31及工件12鍍膜厚度比值適合，通常介 於0.8〜2之間，以利於監控晶片31對自身鍍膜厚度進行監 控，亦即實現對工件12不同鍍膜厚度進行精確控制。監 控晶片31可採用一個或多個晶片，對於較簡單鍍膜，單 個監控晶片31即可滿足要求；如鍍膜源20採用多種鍍材 時，可採用多個監控晶片31，分別對應於鍍膜材質。 [0027] 所述測試組件40可包括測試晶片41以及滑動支撐座42 ; 也可通過設置一活動支柱43，來調整測試組件40高度及 傾角。滑動支撐座32可沿外殼内壁之滑軌移動，以調整 測試晶片41之位置，從而可調整其相對於鍍膜源20之距 離；測試晶片41可採用石英測試晶片或光學玻璃測試晶 片，其利用石英震盪頻率之改變來初步監控工件12之鍍 膜厚度變化，並根據該厚度變化監測鍍膜源之鍍率。通 常，鍍膜源之鍍率維持在0. 5A*s_1左右，當測試組件40 監測之鍍膜速率偏離該數值時，即可調整鍍膜源20之電 壓或功率，以使鍍膜源20之鍍率達到預定要求。當鍍膜 源20採用多種鍍材時，也可於相應位置設置多個測試組 件40同時對鍍膜厚度進行初步監控，以減少操作誤差， 提高鍍膜過程之精度。 [0028] 鍍膜時，承載座11在旋轉軸13帶動下繞其轉動，使工件 12均勻鍍膜。當需要於工件12上鍍較厚薄膜時，即可縮 短監控晶片31相對於鍍膜源20之距離，即造成監控晶片 31之鍍膜厚度與欲鍍於工件上薄膜厚度之比值提高；反 094117367 表單編號A0101 第10頁/共19頁 1003263264-0 1352128 100年07月20日修正替换頁 之亦然。因而，在本實施例中，‘監控晶片31相對於鍍膜 源20之位置可與工件12相對於鍍膜源20之位置相近似， 亦可高於或低於工件12相對於鍍膜源20之位置。鍍膜設 備1特別適應於多層鍍膜，當每層薄膜厚度不一時，按上 述方法相應地調整監控晶片31之位置，以使其適應新鍍 膜層厚度之需求，於工件12上鍍得相應厚度之薄膜層。 如對於一紫外濾光片，為提高紫外波段截止效果，通常 需於基底鍍上30層以上薄膜，每層薄膜厚度變化範圍在 100nm~200nm左右，此時需不斷調整監控晶片31之位置 ，以利於其對工件12上不同厚度之鍍膜進行即時監控。 [0029] 請參閱第三圖，係本技術方案提供之鍍膜方法流程圖。 該鍍膜方法包括以下步驟：提供一鍍膜源；將複數欲鍍 膜之工件置於與鍍膜源相對設置之承載裝置之複數承載 座上；對工件鍍膜，同時調整一監控裝置中監控晶片相 對於鍍膜源之距離，來改變監控晶片之鍍膜厚度與工件 欲鍍膜厚度所成之比值，以利於監控晶片監控工件上欲 鍍膜厚度；重複前一步驟，直到工件鍍上預定厚度之薄 膜。 [0030] 步驟100 :提供一鍍膜源。該鍍膜源20係可採用蒸鍍源、 濺鍍源、靶材等，當需鍍多層薄膜時，其通常包含多種 材質，因而，鍍膜源可相應包括多種材質之鍵膜源，則 鍍膜源20可採用多個鍍源或靶頭。 [0031] 步驟200 :將複數欲鍍膜之工件置於與鍍膜源相對設置之 承載裝置之複數承載座上。通常，為保持該等工件鍍膜 均勻一致性，該等承載座11均勻分佈於承載平台14上， 094117367 表單編號A0101 第11頁/共19頁 1003263264-0 1352128 100年07月20日核正替換頁 而對於欲鍍相同厚度膜層之工件12，可將其設置於對稱 的承載座11上。 [0032] 步驟300 :對工件鍍膜，同時調整一監控裝置中監控晶片 相對於鍍膜源之距離，來改變監控晶片之鍍膜厚度與工 件欲鍍膜厚度所成之比值，以利於監控晶片監控工件上 欲鍍膜厚度。開始鍍膜時，通過監控裝置30中之監控晶 片31來監控工件12上鍍膜厚度，由於監控晶片之鍍膜厚 度與工件欲鍍膜厚度成一定比值，通過該比值可得出監 控晶片31相對於鍍膜源20之距離，調整成相應位置後， 即可利用監控晶片31監控鍍膜厚度。如工件12欲鍍膜厚 度增大時，使得該比值增加，即可相應縮短所述監控晶 片31相對於鍍膜源20之距離，以利於其對工件12鍍膜厚 度之監控；同樣，工件12欲鍍膜厚度較低時，使得該比 值減小，即可相應增加監控晶片31相對於鍍膜源之距離 ，以利於其對工件12鍍膜厚度之監控。通過監控晶片31 之此種即時監控，可精密控制工件12之鍍膜厚度。 [0033] 步驟400 :重複前一步驟，直到工件鍍上預定厚度之薄膜 。通常，工件12上需鍍多層薄膜，當工件12通過上述步 驟鍍上一層薄膜後，接著進行下一層鍍膜時，該膜層厚 度通常與上一層薄膜厚度不同，此時只需重複步驟300， 使監控晶片31仍然能監控工件12欲鍍膜厚度，於其上鍍 新的膜層。如此，不論需於工件12上鍍多少層薄膜，其 厚度儘管各不相同，通過本實施例提供之鍍膜方法即可 滿足預定厚度鍍膜要求。欲鍍膜有時需鍍上不同材質膜 層時，還要更換成相應鍍源。 094117367 表單編號A0101 第12頁/共19頁 1003263264-0 Γ352128 100年07月20日修正替換頁 [0034] 另，鍍膜方法還可包括利’用一測試組件40初步監控工件 12鍍膜厚度及鍍膜源20鍍率之步驟；測試組件40至少包 括一能動態調整之測試晶片41，其可採用石英晶片或光 學玻璃晶片。 [0035] 本實施例提供之鍍膜設備1具有一可動態滑動之監控晶片 31，當欲鍍工件固定時，通過動態調整監控晶片31相對 於鍍膜源20之距離，從而可改變監控晶片31之鍍膜厚度 與欲鍍於工件12上薄膜厚度之比值，使監控晶片適應於 監控新的欲鍍膜厚度。因而，本實施例之鍍膜設備可適 應膜厚多樣化之產品，特別適用於多層鍍膜。而且上述 比值在實際應用中較易於精密控制，能通過動態調整監 控晶片31相對於鍍膜源20之距離，使監控晶片31能即時 對工件不同厚度之鍍膜進行精確控制。另，由於本實施 例還結合一可動態滑動之測試組件40，利用其初步監控 鍍膜厚度以及鍍膜源20之鍍率，以利於監控晶片31進一 步對工件12鍍膜厚度進行精密控制。 [0036] 综上所述，本發明符合發明專利之要件，爰依法提出專 利申請。惟，以上所述者僅為本發明之較佳實施例，自 不能以此限制本案之申請專利範圍。舉凡熟悉本案技藝 之人士，在援依本案發明精神所作之等效修飾或變化， 皆應包含於以下之申請專利範圍内。 【圖式簡單說明】 [0037] 第一圖係本技術方案實施例之鍍膜設備示意圖。 [0038] 第二圖係本技術方案實施例之鍍膜設備中承載裝置仰視 圖。 表單編號A0101 094117367 第13頁/共19頁 1003263264-0 1352128 [0039] [0040] [0041] [0042] [0043] [0044] [0045] [0046] [0047] [0048] [0049] [0050] [0051] [0052] [0053] [0054] [0055] 100年07月20日核正替換 第三圖係本技術方案實施例之鍍膜方法流程圖。 【主要元件符號說明】 鍍膜設備：1 承載座：11 旋轉韩：13 承載圓週：15 監控裝置：30 滑動元件：32 測試晶片.41 活動支柱：4 3 承載裝置：10 工件：12 承載平台：14 鍍膜源：20 監控晶片：31 測試組件：40 滑動支撐座：42 真空腔體：50 094117367 表單编號A0101 第14頁/共19頁 1003263264-01352128 100 years Ό July 2nd day L------------- VI. Description of the invention: [Technical field of invention] [0001] The present invention relates to the field of thin film processing, and more particularly to plating Coating equipment for coating thickness monitoring function and coating method thereof. [Prior Art] [0002] At present, thin film process technology is widely used in the semiconductor industry and precision machinery. 'Because of the high added value of the products produced by the thin film process technology, the thin film process technology and film materials are widely used in research and Practice, while bringing the rapid development of key film technology. Generally, the key 貘 method mainly includes ion plating method, radio frequency magnetron sputtering, vacuum evaporation method, and chemical vapor deposition method. However, with the intensive and miniaturized integrated circuit, the precision of precision machinery is increasing, and the thickness of the coating is increasingly demanding. For example, some filter films require as many as dozens of layers, which makes film thickness monitoring a major challenge. [0003] For film coating thickness monitoring, optical monitoring is a preferred monitoring method commonly used in high-precision coating process, and is divided into direct monitoring on the workpiece or indirectly on a separate monitoring test piece, the latter is flexible. If a quartz monitor wafer is used to monitor and measure the thickness of the coating, it can monitor the thickness of the deposited film in real time. The basic principle is that a certain mass of material is deposited on the quartz wafer, and the resonance frequency is changed: Af = _ 2 2f 〇 Δm / ACup / · 5: ; where, is the initial resonant frequency of the quartz wafer; A is the surface area; p is the density of quartz (2 · 648gcm 3). In this formula, c is a constant related to quartz crystal, which will remain unchanged during the coating process; then within a certain range, the change of the resonant frequency of the quartz wafer and the change in the amount of Moir deposited on the surface are linear 094117367. Form No. A0101 Page 4 of 19 Page 1003263264-0 Correction of the replacement page 1352128 on July 20, 100; thus, the film thickness deposited on the surface of the quartz wafer can be monitored by monitoring the change in the resonant frequency of the quartz wafer. [〇〇〇4] The prior art provides a coating apparatus comprising a motor; a first gear, the shaft is disposed at an axis of the motor; and at least two second gears respectively meshing with the first gear; At least two substrate carriers are respectively disposed on the axis of each of the second gears; a spacer is disposed between the second gears and the substrate carriers, and at least one side of the spacers Providing two shutter brackets, one end of each shutter bracket is fixed to the partition plate, and the other end portion thereof is extended toward the direction in which the substrate carrier is disposed; and a coating source is connected to the substrates The carrier is opposite. The optical monitoring unit of the coating device is adjacent to one of the substrate carriers. The method only obscures the thin area to be coated by the shutter, thereby producing a film layer having a discontinuous thickness, which is a control of the discontinuous thickness of the single layer film. Generally, for different optical components, the corresponding design film thickness requirement is required. Unlike the limited monitoring wavelength range, the thickness of the coating can be monitored, which makes it difficult to meet the diversified thickness of the multilayer film, and it is difficult to precisely control the thickness of the various films. In view of the above, it is necessary to provide a coating apparatus that can be applied to a variety of coating thicknesses and is easy to precisely control. SUMMARY OF THE INVENTION [0006] Hereinafter, a coating apparatus which can be applied to a variety of coating thicknesses and which is easy to precisely control will be described with reference to a number of embodiments. [0007] A method of coating is described by way of examples. [0008] In order to achieve the above, a coating apparatus is provided, which includes: a bearing 094117367, a form number A0101, a fifth page, a total of 19 pages, 1003263264-0, 1352128, a reversal of 100 devices, the carrier device has a rotating shaft and a carrying platform, wherein the carrying platform is provided with a plurality of carriers, the plurality of carriers are used to carry a plurality of workpieces to be coated; and a coating source is disposed opposite to the supporting device, the coating One or more of a source evaporation source, a sputtering source, and a target; and a monitoring device disposed opposite to the coating source and adjacent to the workpiece, the monitoring device including at least one monitoring wafer and sliding The monitoring wafer is located at one end of the sliding element, and the monitoring wafer is disposed opposite to the coating source, so that the coating source is coated on the workpiece while the monitoring wafer is also coated, wherein The monitoring wafer is a quartz wafer or an optical glass wafer, and the sliding element is slidably coupled to the rotating shaft along an axial direction of the rotating shaft for dynamic adjustment monitoring during coating Coating the wafer with respect to the distance of the source, so that the monitoring control film coating thickness to the wafer to a thickness ratio of the workpieces. [0009] Wherein, the coating device further comprises at least one test component disposed opposite the coating source and disposed between the coating source and the carrier. [0010] The test component includes at least one dynamically adjustable test wafer; the test wafer is a center wafer or an optical glass wafer. The ratio is between 0. 8~2. The ratio of the ratio of the thickness of the coating film to the thickness of the coating film is inversely proportional to the distance of the surface of the coating film. [0012] the carrying device adopts an umbrella-type or planetary-type carrying device; and the plurality of carrying seats are evenly distributed on the surface of the umbrella-type carrying device relative to the coating source or the surface of the planetary carrier relative to the coating source . [0013] Also, a coating method comprising the following steps: 094117367 Form No. 101 0101 Page 6 / Total 19 Page 1003263264-0 1352128 100 July 20th Shuttle Replacement Page [0014] A coating apparatus as described above is provided; [0015] placing a plurality of workpieces to be coated on a plurality of carriers of the carrier device t [0016] coating the workpiece and the monitor wafer while adjusting axial sliding of the sliding member along the rotating shaft Adjusting the distance of the monitoring wafer relative to the coating source, thereby changing the ratio of the coating thickness of the monitoring wafer to the thickness of the workpiece to be coated, thereby facilitating monitoring of the workpiece on the workpiece by the monitoring wafer Thickness; [0017] The previous step is repeated until the workpiece is plated with a film of a predetermined thickness. [0018] wherein the coating method further comprises initially monitoring the thickness of the workpiece coating and the plating rate of the coating source by using a test component; the testing component comprises at least a dynamically adjustable test wafer; and the quartz wafer or the optical glass wafer is used. [0019] when the thickness of the workpiece to be coated is increased, the distance between the monitoring wafer and the coating source is reduced, so that the ratio of the coating thickness of the monitoring wafer to the coating thickness of the workpiece is increased; the thickness of the workpiece to be coated is decreased. The ratio of the thickness of the coating film to the coating thickness of the workpiece is reduced; the ratio is between 0. 8 and 2 [0020] and the prior art In contrast, the coating apparatus provided in this embodiment has a dynamically slidable monitoring wafer. When the workpiece to be plated is fixed, the thickness of the coating on the monitoring wafer is adjusted by dynamically adjusting the distance of the wafer relative to the coating source to change the monitoring. The ratio of the thickness of the wafer to the thickness of the film to be plated on the workpiece, so that the monitor wafer is adapted to monitor the new thickness of the coating 094117367. Form No. A0101 Page 7 / 19 pages 1003263264-0 1352128 100 years of replacement Therefore, the coating apparatus of the embodiment can be adapted to a variety of film thicknesses, and is particularly suitable for multi-layer coating; and the ratio is practically applied. Easier to precise control, monitoring and dynamic adjustment of the wafer by plating with respect to the distance of the source, in order to achieve different coating thickness of the workpiece for precise control. [0021] The coating method provided by the embodiment utilizes the device to dynamically slide the monitoring wafer. During the coating process, the distance between the monitoring wafer and the coating source can be adjusted, so that the coating thickness of the workpiece can be monitored in real time to realize the workpiece coating. Precision control of thickness. [Embodiment] [0023] The present invention will be further described in detail below with reference to the accompanying drawings. Please refer to the first figure and the second figure together to provide a schematic diagram of the structure of the coating device and the carrying device provided by the embodiment of the technical solution. The coating device 1 comprises a workpiece carrier 10 having a plurality of carriers 11 for carrying a workpiece 12 to be plated; a coating source 20 opposite the workpiece carrier 10; and a monitoring device 30 Opposite to the coating source 20, the distance from the coating source 20 can be adjusted correspondingly with the thickness variation of the coating to change the ratio of the coating thickness of the monitor wafer 31 to the coating thickness of the workpiece 12 in the monitoring device. The coating apparatus 1 may further include at least one test assembly 40 disposed opposite the coating source 20 and disposed between the coating source and the carrier. The entire coating apparatus 1 can be placed in a vacuum chamber 50. [0024] The carrying device 10 may adopt an umbrella type or a planetary structure. This embodiment employs a planetary structure. The carrying device 10 has a rotating shaft 13 and a carrying platform 14, and the plurality of carrying seats 11 are disposed on the carrying platform 14 and evenly distributed on the bearing circumference 15 094117367 of a certain radius centered on the rotating shaft 13 or The multi-layer is surrounded by the circumference of the rotating shaft 13; the half of the carrying circle 15 is the form number A0101, the eighth page, the total of 19 pages, 1003263264-0, the correction of the replacement page 1352128, the number of the bearing seats 11 When there are few, the radius is correspondingly small; when the number of the carrier 11 is large, the radius is correspondingly increased, so that the carriers 11 can be evenly arranged, so that more workpieces 12 can be coated at the same time. In this embodiment, two load-bearing circumferences 15 are used, which have a total of 24 load-bearing seats 11 on which a workpiece 12 to be coated is respectively carried. [0025] The coating source 20 is disposed opposite to the carrier device 10; the coating source may be a vapor deposition source or a sputtering source 'target. When a multi-layer film is to be applied, it usually contains a plurality of film materials. Therefore, the film source can include a plurality of film sources, and the film source 20 can use a plurality of plating sources or targets. The monitoring device 30 may include a monitoring wafer 31 and a sliding member 32; the monitoring wafer 31 may be a quartz wafer or an optical glass wafer; the sliding member 32 may be axially slid along the rotating shaft 13 to adjust the position of the monitoring wafer 31, Thereby, the distance of the monitor wafer 31 with respect to the coating source 20 is dynamically adjusted. In this embodiment, the monitoring wafer 31 and the workpiece 12 are both disposed opposite to the coating source 20. While the workpiece 12 is coated, the monitoring wafer 31 is also plated with a certain thickness of film, thereby monitoring the coating thickness of the wafer 31 and the workpiece 12 The thickness of the coating is a certain ratio. Generally, when the coating time is constant, the thickness of the coating layer of the monitor wafer 31 and the workpiece 12 is inversely proportional to the distance from the coating source 20, that is, the closer the wafer 31 and the workpiece 12 are to the coating source 20, the coating layer thereon. The thicker, thus, when the workpiece 12 is fixed in position, the coating thickness ratio of the monitor wafer 31 and the workpiece 12 can be adjusted by the distance of the monitor wafer 31 from the coating source 20. If the workpiece 12 is plated with a certain thickness of the single layer film, according to the ratio of the thickness of the coating wafer 31 and the workpiece 12, the thickness of the coating on the workpiece 12 is indirectly controlled by the monitoring wafer 31 to monitor the thickness of the coating itself; When plating a multilayer film, as described above, 094117367 Form No. A0101 Page 9/19 pages 1003263264-0 1352128 100 July 20th After the first film is plated, the thickness of the second film layer is When changing, the distance between the monitoring wafer 31 and the coating source 20 is adjusted. When the thickness is thicker, the distance is adjusted to make the ratio of the coating thickness of the monitoring wafer 31 and the workpiece 12 suitable, usually between 0.8 and 2, to facilitate monitoring the wafer 31. The thickness of the coating itself is monitored, that is, the precise control of the thickness of the coating 12 is achieved. The monitoring wafer 31 can adopt one or more wafers. For a simple coating, a single monitoring wafer 31 can meet the requirements; if the coating source 20 uses a plurality of plating materials, a plurality of monitoring wafers 31 can be used, which respectively correspond to the coating material. [0027] The test assembly 40 can include a test wafer 41 and a sliding support 42; the height and tilt of the test assembly 40 can also be adjusted by providing a movable post 43. The sliding support base 32 is movable along the slide rail of the inner wall of the outer casing to adjust the position of the test wafer 41 so as to adjust its distance from the coating source 20; the test wafer 41 can be a quartz test wafer or an optical glass test wafer using quartz. The change in the oscillation frequency is used to initially monitor the change in coating thickness of the workpiece 12, and the plating rate of the coating source is monitored based on the thickness variation. Generally, the plating rate of the coating source is maintained at about 0.5 A*s_1. When the coating rate monitored by the test component 40 deviates from the value, the voltage or power of the coating source 20 can be adjusted to achieve the plating rate of the coating source 20. Claim. When the coating source 20 is made of a plurality of plating materials, a plurality of test components 40 may be disposed at corresponding positions to simultaneously monitor the thickness of the coating to reduce the operation error and improve the precision of the coating process. [0028] When the film is coated, the carrier 11 is rotated around the rotating shaft 13 to uniformly coat the workpiece 12. When it is required to plate a thick film on the workpiece 12, the distance between the monitoring wafer 31 and the coating source 20 can be shortened, that is, the ratio of the coating thickness of the monitoring wafer 31 to the thickness of the film to be plated on the workpiece is increased; and the 094117367 form number A0101 Page 10 of 19 1003263264-0 1352128 The revised replacement page is also available on July 20, 100. Thus, in the present embodiment, the position of the monitor wafer 31 relative to the coating source 20 may be similar to the position of the workpiece 12 relative to the coating source 20, and may be higher or lower than the position of the workpiece 12 relative to the coating source 20. The coating device 1 is particularly suitable for multi-layer coating. When the thickness of each film is different, the position of the monitoring wafer 31 is adjusted accordingly according to the above method to adapt to the thickness of the new coating layer, and the film of the corresponding thickness is plated on the workpiece 12. Floor. For an ultraviolet filter, in order to improve the ultraviolet band cut-off effect, it is usually necessary to plate more than 30 films on the substrate, and the thickness of each film varies from about 100 nm to about 200 nm. At this time, the position of the monitor wafer 31 needs to be constantly adjusted to It facilitates immediate monitoring of coatings of different thicknesses on the workpiece 12. [0029] Please refer to the third figure, which is a flow chart of a coating method provided by the technical solution. The coating method comprises the steps of: providing a coating source; placing a plurality of workpieces to be coated on a plurality of carriers of the carrying device disposed opposite to the coating source; coating the workpiece while adjusting a monitoring device in the monitoring device relative to the coating source The distance is changed to change the ratio of the coating thickness of the monitor wafer to the thickness of the workpiece to be coated, so as to facilitate monitoring of the wafer thickness on the workpiece. The previous step is repeated until the workpiece is plated with a predetermined thickness. [0030] Step 100: providing a coating source. The coating source 20 can be an evaporation source, a sputtering source, a target, etc. When a multilayer film is to be plated, it usually contains a plurality of materials. Therefore, the coating source can include a plurality of material bond source sources, and the coating source 20 Multiple plating sources or targets can be used. [0031] Step 200: placing a plurality of workpieces to be coated on a plurality of carriers of a carrier disposed opposite the coating source. Generally, in order to maintain the uniformity of the coating of the workpieces, the carriers 11 are evenly distributed on the carrying platform 14, 094117367 Form No. A0101 Page 11 / 19 pages 1003263264-0 1352128 100 July 20th Nuclear Replacement Page For the workpiece 12 to be plated with the same thickness, it can be placed on the symmetrical carrier 11. [0032] Step 300: coating the workpiece, and adjusting the distance of the monitoring wafer relative to the coating source in a monitoring device to change the ratio of the coating thickness of the monitoring wafer to the thickness of the workpiece to be coated, so as to facilitate monitoring of the wafer to monitor the workpiece. Coating thickness. When the coating is started, the thickness of the coating on the workpiece 12 is monitored by the monitoring wafer 31 in the monitoring device 30. Since the coating thickness of the monitoring wafer is proportional to the thickness of the workpiece to be coated, the ratio of the monitoring wafer 31 to the coating source 20 can be obtained by the ratio. After the distance is adjusted to the corresponding position, the thickness of the coating can be monitored by the monitor wafer 31. If the thickness of the workpiece 12 is to be increased, the ratio is increased, and the distance between the monitor wafer 31 and the coating source 20 can be shortened correspondingly to facilitate monitoring of the coating thickness of the workpiece 12. Similarly, the thickness of the workpiece 12 is desired. When the ratio is lower, the ratio is reduced, and the distance between the monitor wafer 31 and the coating source is increased correspondingly to facilitate the monitoring of the coating thickness of the workpiece 12. By monitoring such instant monitoring of the wafer 31, the coating thickness of the workpiece 12 can be precisely controlled. [0033] Step 400: Repeat the previous step until the workpiece is plated with a film of a predetermined thickness. Generally, the workpiece 12 is coated with a multi-layer film. When the workpiece 12 is coated with a film through the above steps, and then the next layer is coated, the film thickness is usually different from the thickness of the upper film. The monitor wafer 31 is still capable of monitoring the thickness of the workpiece 12 to be coated and plating a new layer thereon. Thus, no matter how many layers of film are to be plated on the workpiece 12, although the thicknesses thereof are different, the coating method provided by the embodiment can satisfy the predetermined thickness coating requirements. If the coating is to be plated with different material layers, it must be replaced with the corresponding plating source. 094117367 Form No. A0101 Page 12 of 19 1003263264-0 Γ352128 Correction Replacement Page of July 20, 100 [0034] In addition, the coating method may further include initially monitoring the coating thickness and coating source of the workpiece 12 with a test component 40. The step of 20 plating rate; the test assembly 40 includes at least one dynamically adjustable test wafer 41, which may be a quartz wafer or an optical glass wafer. [0035] The coating apparatus 1 provided in this embodiment has a dynamically slidable monitoring wafer 31. When the workpiece to be plated is fixed, the distance between the wafer 31 and the coating source 20 can be dynamically adjusted, thereby changing the coating of the monitoring wafer 31. The ratio of the thickness to the thickness of the film to be plated on the workpiece 12 allows the monitor wafer to be adapted to monitor the thickness of the desired coating. Therefore, the coating apparatus of the present embodiment can be applied to a product having a wide film thickness, and is particularly suitable for a multilayer coating. Moreover, the above ratio is easier to precisely control in practical applications, and the distance between the wafer 31 and the coating source 20 can be dynamically adjusted, so that the monitoring wafer 31 can accurately control the coating of different thicknesses of the workpiece. In addition, since the present embodiment further incorporates a dynamically slidable test assembly 40, the thickness of the coating film and the plating rate of the coating source 20 are initially monitored to facilitate the monitoring wafer 31 to further precisely control the coating thickness of the workpiece 12. [0036] In summary, the present invention complies with the requirements of the invention patent and submits a patent application according to law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Anyone who is familiar with the skill of this case, equivalent modifications or changes made in the spirit of the invention shall be included in the scope of the following patent application. BRIEF DESCRIPTION OF THE DRAWINGS [0037] The first figure is a schematic view of a coating apparatus of an embodiment of the present technical solution. [0038] The second drawing is a bottom view of the carrying device in the coating apparatus of the embodiment of the present technical solution. [0050] [0049] [0055] [0055] [0055] The replacement of the third figure is a flow chart of the coating method of the embodiment of the present technical solution. [Main component symbol description] Coating equipment: 1 Carrier: 11 Rotating Korea: 13 Bearing circumference: 15 Monitoring device: 30 Slide component: 32 Test wafer. 41 Activity pillar: 4 3 Carrier: 10 Workpiece: 12 Load platform: 14 Coating source: 20 Monitoring wafer: 31 Test component: 40 Slide support: 42 Vacuum chamber: 50 094117367 Form number A0101 Page 14/19 pages 1003263264-0