TWI346393B - A method for forming a p-n junction photodiode and an apparatus for the same - Google Patents
A method for forming a p-n junction photodiode and an apparatus for the sameInfo
- Publication number
- TWI346393B TWI346393B TW096124547A TW96124547A TWI346393B TW I346393 B TWI346393 B TW I346393B TW 096124547 A TW096124547 A TW 096124547A TW 96124547 A TW96124547 A TW 96124547A TW I346393 B TWI346393 B TW I346393B
- Authority
- TW
- Taiwan
- Prior art keywords
- forming
- same
- junction photodiode
- photodiode
- junction
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Light Receiving Elements (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW096124547A TWI346393B (en) | 2007-07-05 | 2007-07-05 | A method for forming a p-n junction photodiode and an apparatus for the same |
US11/875,287 US7579668B2 (en) | 2007-07-05 | 2007-10-19 | Method for photo-detecting and apparatus for the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW096124547A TWI346393B (en) | 2007-07-05 | 2007-07-05 | A method for forming a p-n junction photodiode and an apparatus for the same |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200903826A TW200903826A (en) | 2009-01-16 |
TWI346393B true TWI346393B (en) | 2011-08-01 |
Family
ID=40220779
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW096124547A TWI346393B (en) | 2007-07-05 | 2007-07-05 | A method for forming a p-n junction photodiode and an apparatus for the same |
Country Status (2)
Country | Link |
---|---|
US (1) | US7579668B2 (zh) |
TW (1) | TWI346393B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10415513B2 (en) * | 2015-05-26 | 2019-09-17 | Tenneco Gmbh | EGR system with particle filter and wastegate |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3863334A (en) * | 1971-03-08 | 1975-02-04 | Motorola Inc | Aluminum-zinc metallization |
JPS5378788A (en) * | 1976-12-23 | 1978-07-12 | Hitachi Ltd | Temperature-compensation-type constant voltage element |
DE3706278A1 (de) * | 1986-02-28 | 1987-09-03 | Canon Kk | Halbleitervorrichtung und herstellungsverfahren hierfuer |
US5412229A (en) * | 1990-08-31 | 1995-05-02 | Sumitomo Electric Industries, Ltd. | Semiconductor light detecting device making use of a photodiode chip |
DE19714054A1 (de) * | 1997-04-05 | 1998-10-08 | Daimler Benz Ag | SiGe-Photodetektor mit hohem Wirkungsgrad |
FR2764117B1 (fr) * | 1997-05-30 | 1999-08-13 | Sgs Thomson Microelectronics | Contact sur une region de type p |
US5965875A (en) * | 1998-04-24 | 1999-10-12 | Foveon, Inc. | Color separation in an active pixel cell imaging array using a triple-well structure |
US6350663B1 (en) * | 2000-03-03 | 2002-02-26 | Agilent Technologies, Inc. | Method for reducing leakage currents of active area diodes and source/drain diffusions |
US6483116B1 (en) * | 2000-04-25 | 2002-11-19 | Innovative Technology Licensing, Llc | High performance ultraviolet imager for operation at room temperature |
JP4154165B2 (ja) * | 2002-04-05 | 2008-09-24 | キヤノン株式会社 | 光電変換素子及びそれを用いた固体撮像装置、カメラ及び画像読み取り装置 |
US7009680B2 (en) * | 2003-06-02 | 2006-03-07 | Xtellus Inc. | Narrow band tunable filter with integrated detector |
JP3878575B2 (ja) * | 2003-04-28 | 2007-02-07 | 松下電器産業株式会社 | 固体撮像装置及びその駆動方法 |
US6953925B2 (en) * | 2003-04-28 | 2005-10-11 | Stmicroelectronics, Inc. | Microlens integration |
JP4839008B2 (ja) * | 2005-03-28 | 2011-12-14 | 富士フイルム株式会社 | 単板式カラー固体撮像素子 |
US20070099328A1 (en) * | 2005-10-31 | 2007-05-03 | Yuan-Sheng Chiang | Semiconductor device and interconnect structure and their respective fabricating methods |
-
2007
- 2007-07-05 TW TW096124547A patent/TWI346393B/zh not_active IP Right Cessation
- 2007-10-19 US US11/875,287 patent/US7579668B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US7579668B2 (en) | 2009-08-25 |
US20090008736A1 (en) | 2009-01-08 |
TW200903826A (en) | 2009-01-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |