TWI346381B - Capacitor in an integrated circuit - Google Patents

Capacitor in an integrated circuit

Info

Publication number
TWI346381B
TWI346381B TW096128388A TW96128388A TWI346381B TW I346381 B TWI346381 B TW I346381B TW 096128388 A TW096128388 A TW 096128388A TW 96128388 A TW96128388 A TW 96128388A TW I346381 B TWI346381 B TW I346381B
Authority
TW
Taiwan
Prior art keywords
capacitor
integrated circuit
integrated
circuit
Prior art date
Application number
TW096128388A
Other languages
English (en)
Other versions
TW200843083A (en
Inventor
Jhon Jhy Liaw
Original Assignee
Taiwan Semiconductor Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg Co Ltd filed Critical Taiwan Semiconductor Mfg Co Ltd
Publication of TW200843083A publication Critical patent/TW200843083A/zh
Application granted granted Critical
Publication of TWI346381B publication Critical patent/TWI346381B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H01L23/5223—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW096128388A 2007-04-30 2007-08-02 Capacitor in an integrated circuit TWI346381B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/742,421 US9177908B2 (en) 2007-04-30 2007-04-30 Stacked semiconductor capacitor structure

Publications (2)

Publication Number Publication Date
TW200843083A TW200843083A (en) 2008-11-01
TWI346381B true TWI346381B (en) 2011-08-01

Family

ID=39885938

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096128388A TWI346381B (en) 2007-04-30 2007-08-02 Capacitor in an integrated circuit

Country Status (3)

Country Link
US (1) US9177908B2 (zh)
CN (1) CN101299428B (zh)
TW (1) TWI346381B (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8106478B2 (en) * 2007-01-18 2012-01-31 Renesas Electronics Corporation Semiconductor device and storage medium
US8304855B2 (en) * 2010-08-04 2012-11-06 Harris Corporation Vertical capacitors formed on semiconducting substrates
US9224643B2 (en) * 2011-09-19 2015-12-29 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for tunable interconnect scheme
US8941089B2 (en) * 2012-02-22 2015-01-27 Adesto Technologies Corporation Resistive switching devices and methods of formation thereof
US9666661B2 (en) * 2015-09-08 2017-05-30 Taiwan Semiconductor Manufacturing Company, Ltd. Coplanar metal-insulator-metal capacitive structure
CN112989743B (zh) * 2021-02-05 2024-05-28 上海华虹宏力半导体制造有限公司 一种验证电容失配测试结果的系统及方法
US11984351B2 (en) 2021-04-13 2024-05-14 Taiwan Semiconductor Manufacturing Company, Ltd. Cavity in metal interconnect structure

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5479316A (en) * 1993-08-24 1995-12-26 Analog Devices, Inc. Integrated circuit metal-oxide-metal capacitor and method of making same
US5708559A (en) * 1995-10-27 1998-01-13 International Business Machines Corporation Precision analog metal-metal capacitor
US6358709B1 (en) * 1995-12-07 2002-03-19 Diversa Corporation End selection in directed evolution
US6251740B1 (en) * 1998-12-23 2001-06-26 Lsi Logic Corporation Method of forming and electrically connecting a vertical interdigitated metal-insulator-metal capacitor extending between interconnect layers in an integrated circuit
US6037621A (en) * 1998-07-29 2000-03-14 Lucent Technologies Inc. On-chip capacitor structure
US6391785B1 (en) * 1999-08-24 2002-05-21 Interuniversitair Microelektronica Centrum (Imec) Method for bottomless deposition of barrier layers in integrated circuit metallization schemes
JP4446525B2 (ja) * 1999-10-27 2010-04-07 株式会社ルネサステクノロジ 半導体装置
US6117747A (en) * 1999-11-22 2000-09-12 Chartered Semiconductor Manufacturing Ltd. Integration of MOM capacitor into dual damascene process
US6822312B2 (en) * 2000-04-07 2004-11-23 Koninklijke Philips Electronics N.V. Interdigitated multilayer capacitor structure for deep sub-micron CMOS
US6680542B1 (en) * 2000-05-18 2004-01-20 Agere Systems Inc. Damascene structure having a metal-oxide-metal capacitor associated therewith
US6570210B1 (en) * 2000-06-19 2003-05-27 Koninklijke Philips Electronics N.V. Multilayer pillar array capacitor structure for deep sub-micron CMOS
US6690570B2 (en) * 2000-09-14 2004-02-10 California Institute Of Technology Highly efficient capacitor structures with enhanced matching properties
EP1328973A2 (en) * 2000-10-03 2003-07-23 Broadcom Corporation High-density metal capacitor using dual-damascene copper interconnect
TW541646B (en) * 2002-07-11 2003-07-11 Acer Labs Inc Polar integrated capacitor and method of making same
TW548779B (en) * 2002-08-09 2003-08-21 Acer Labs Inc Integrated capacitor and method of making same
US6624040B1 (en) * 2002-09-20 2003-09-23 Chartered Semiconductor Manufacturing Ltd. Self-integrated vertical MIM capacitor in the dual damascene process
US6893959B2 (en) * 2003-05-05 2005-05-17 Infineon Technologies Ag Method to form selective cap layers on metal features with narrow spaces
JP4615962B2 (ja) * 2004-10-22 2011-01-19 ルネサスエレクトロニクス株式会社 半導体装置
US7466534B2 (en) * 2006-06-06 2008-12-16 International Business Machines Corporation High capacitance density vertical natural capacitors

Also Published As

Publication number Publication date
CN101299428A (zh) 2008-11-05
TW200843083A (en) 2008-11-01
US9177908B2 (en) 2015-11-03
US20080265369A1 (en) 2008-10-30
CN101299428B (zh) 2011-01-12

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