TWI343505B - Line-at-a-time electronic driving method and micro-electromechanical systems device - Google Patents

Description

1343505 (I) The representative representative of the case is: (1B). (b) A brief description of the symbol of the representative figure: 112~substrate; 114~interferometric modulator array; 116~light source; 118~lightguide; 120~collimator; ^122~light; 126~film stack; 128-observation . 5. If there is a chemical formula in this case, please disclose the benefits that best show the characteristics of the invention. TECHNICAL FIELD OF THE INVENTION: 1. Technical Field of the Invention The present invention relates to an interference modulator. [Prior Art] An interferometric modulator (丨Mods) modulates incident light by operating the optical characteristics of the micromechanical element. This is accomplished by using various techniques to alter the optical characteristics of the micromechanical components. This is accomplished by varying the optical properties of the component using various techniques. Interferometric modulators offer many applications in their own right, from flat panel displays to optical computing fiber optic modulators to projection displays. These different applications can be designed with different interferometric modulators for the 1077A-4732AA-PF 3 1343505. SUMMARY OF THE INVENTION Generally, in one aspect, the invention features an interferometric modulator-based display that will be an anti-reflective coating or a micro-fabricated auxiliary light source. In general, in one aspect, for a matrix driven array of interferometric modulators or other mechanical components, the invention features a high efficiency drive system. In general, in one form, the invention features a color system that provides greater flexibility. In general, in one aspect, the invention features an electronic device whose background color can be reconfigured to provide different display modalities and/or application functions. Generally, in one form, the present invention is characterized in that an interference modulation is transferred from an interferometric modulator to reduce the operation of the interferometric modulator. In the present invention, the invention is characterized by having a choice. The interferometric modulator design of the swaying device. Generally, in one aspect, the inventive device or interferometer is an interferometric modulation array, and η is used with and in conjunction with a microelectromechanical switch or a micro-electromechanical based logic connection. As a general matter, in one form, the apparatus of the present invention can apply micro-interference modulation to optical switching as well as optical modulation. In general, t, such as °, in a form, the special device of the present invention, which consists of 2 η «. This is an interference modulation warfare and 3-D photoelectric structure. r 43505 In general, in one form, the application of the invention. In the general form of the modulated light, the present invention is in the form, the invention is 生isheng; ^擗gu, #砝咖,#信文为—the microelectromechanical base la and according to the continuous mesh supply procedure Packaging method - in general, in the form, the present invention: the payment of the letter is 66, the film is used, the interferometric modulator is used as the test structure to calculate the remaining should be: [Embodiment] Anti-reflective coating is a previously described The design of the interferometric modulator (in the United States, on the 6th of January, 1995, the special shot request 帛〇 8/554, 63 (the induction absorber design application, here for reference) is black, in which It is possible to absorb #99.7% of the light absorbed on its surface. 4 contributes to the reflective display. In this design, the interferometric modulator reflects light of a given color in an unactivated state and absorbs in an activated state. Light.

Because the interferometric modulator array is formed on a substrate, the absorptive capacity will be reduced by the intrinsic reflection of the substrate. In the case of a glass substrate, the amount of reflection is typically about 4%, which exceeds the spectrum of visible light. Thus, although the interferometric modulator structure has the ability to absorb light, the black state can only be as dark as possible, and the frontal reflection from the substrate still exists. One method of improving the overall performance of an interferometric modulator-based display is by utilizing anti-reflective mineral film (ARcoatings). Such a film of money may include one or more layers of dielectric germanium deposited on the surface of the substrate and designed to reduce reflection from the substrate. There are many possible examples of the design and manufacture of 1077A-4732AA-PF 5 13435〇5 film, which is a kind of early and late film design. It is an early coating of magnesium fluoride. Long thickness. Another method is to divide the aluminum fluoride into four parts - oily soil β / skin / enamel film / children on the broken glass, followed by a layer of quarter-wave film of fluorescein magnesium. A layer of zinc sulfide film is added between the two. The first picture shows a Fang Mu Gans adm Riwan, where the AR coating is applied to the interferometer modulation display to change the § sound; a k , k

Unsound performance. In Fig. 1A, the AR key film 100, as described above, is deposited on the surface of the glass layer 1 2 adhered to the glass substrate 106. This AR coating _ reduces the brightness of the incident light ι 9 reflected from the surface by introducing more light into the glass layer 1〇2. The result is that when the interferometric modulator is operated in the absorption mode, more incident light can be incident on the interferometric modulator array and a darker display state can still be obtained. The AR coating (10) can also be deposited directly onto the surface of the surface having an array of interferometric modulators. Integrated Light Figure 1A also shows how the auxiliary light is illuminated on a display. In this example, a microscope arc lamp array 1〇4 is fabricated in the glass layer 1〇2. The efficiency of the arc lamp is the source of the light source. According to historical facts, arc lamps have been manufactured using the manufacturing technology of general light bulbs. A typical style of such a lamp is described in U.S. Patent No. 4,987,496. A glass of blood is produced and the separately fabricated electrodes are enclosed in a glass borer. After filling the appropriate gas, the glass m is sealed. Although this bulb can be made very small, its manufacturing method may not be suitable for manufacturing a large number of bulb arrays. Techniques for fabricating microelectromechanical structures can be applied to fabricate microdischarges or

1077A-4732AA-PF 6 505 : Because of the microscopic size of such a miniature lamp cymbal, the applied voltage is less than the voltage and electricity supplied to the conventionally manufactured arc lamp in the example of Figure 1A. An array can be fabricated by which the diaphragm 3 emitted by the lamp is directed to the interferometric modulator array 108' by the reflector layer lu of the body as described below. Figure 2 shows a detailed description of such a lamp, which is optimized for use in a flat panel. The process is described below. As shown in step ^, a frit layer 2 is etched by wet or dry chemical etching. In order to form the reflector bowl 201. The depth and shape of the bowl is determined by the area and tolerance required for each source. Shallow bowls produce a wide range of reflected light. The knives are parabolic and parallel to the reflected light. The diameter of the bowl varies from about 10 microns to hundreds of microns. This size is readily accepted by the viewer's point of view by the amount of display area. The density of the micro lamp array must also be considered. A reflector/composite metal layer 204 and sacrificial layer 202 are deposited and formed into a predetermined pattern using conventional deposition techniques, such as sputtering and standard yellow light development techniques. The reflector/composite metal layer can be a stack of thin films comprising aluminum (reflector) and a complex metal such as cesium iodide 'iodine rape and indium iodide. This complex metal is not necessary to increase the characteristics of the light produced. This sacrificial layer can be a layer, such as Shi Xi. The electrode layer 206 is then deposited and formed into a predetermined pattern to form two separate electrodes. This material may be a high temperature resistant metal such as a crane; and has a thickness sufficient to provide mechanical support 's of thousands of angstrom units. The sacrificial layer 202 is then removed using dry etching techniques. The entire set (e.g., the array of bulbs) is sealed by adhering to a glass sheet, such as a substrate (as shown in Figure 1A), with the 1077A-4732AA-PF 7 1343505 reflector facing the panel. A gas, such as a crucible, is used to backfill the voids and form a pressure of about one atmosphere during the step of sealing the bulb. This can be performed in a closed chamber that has been previously filled with helium. Applying a sufficient voltage to the electrodes of each bulb will cause a discharge, a gas between the ends of the two electrodes, and the emitted light 2〇5 will face away from the reflector 204. If the gate interval is approximately a few hundred microns or less, the voltage can be reduced to several volts. If the electrode material is deposited with a small amount of pressure, the sacrificial layer 202 will determine the position of the electrode within the bowl. In this example, the thickness selected is used to provide a discharge. When removed, how much pressure should be left, causing electrode displacement, which determines the thickness to compensate for the displacement. Generally, s, the thickness will be only a little bit of the depth of the bowl, about several to tens of microns. Referring again to Figure 1A, light is shown traveling along path 113. The light is therefore emitted towards the interferometric modulator array where it acts and is sequentially reflected by the array along path 110 towards interface 107 and observer (1). Therefore, it is possible to manufacture a lamp that does not have a reflector layer in all directions. With or without a reflector w + ^ AJ ^ ug j used for a micro light source or a micro light source array where the DP can be L7 4θ . k can include the projection display, the emission plane of the light or the interior of the plane ( A traditional light source or an external (automobile flash) light source of Judu', 丨1 residence, house. "I W flying early refers to the first β-graph, which shows a source of light from a source of glass or plastic.] 6 shows an alternative auxiliary light method. The light guide 118 is dotted with "112. Can include any type such as fluorescent lamps, LED arrays or the above miniature lamps

1077A-4732AA-PF 343505 Array, fixed to the opposite side of the light guide. Light 122 is coupled into the light guide using a collimator i2, such that most of the light is captured within the light guide via total internal reflection. The diffuser pad is plated with a material or film stack 126 that forms a reflective surface toward the substrate ι2 and an absorbing surface toward the viewer. When light trapped in the light guide is incident on the scattering pad, the condition of total internal reflection is no longer observed and some portion of the light is scattered in all directions. The scattered light that can enter the near and near media vertically, is toward the viewer 128, and is reflected into the substrate 112 due to the presence of the reflective coating I26. Similar to the above-mentioned miniature light bulbs, the dispersions can be made in an array, and each array is as large as the displayed portion, making it almost impossible to detect when looking directly. When the size is relatively small, about ten microns, sufficient auxiliary light can be provided because of the inherent light efficiency of the interferometric modulator array 114. The shape of the scattering pad can be circular, rectangular or of any shape' which can reduce the perception of the viewer. Addressing Elements in the Array In order to activate the array of interferometric modulators, and to coordinate the display, the equations are applied to the rows and columns of the array—continuous voltages are commonly referred to as inter-line modes. The underlying concept is to apply a sufficient voltage to a particular row, so that the voltage applied to the selected column causes the cells on the selected row to be initiated or cancelled according to the column voltage. The threshold and the applied voltage must be such that only the cells located below the selected row are affected by the applied column voltage. By sequentially selecting the rows included on the entire display, the entire array can be addressed in one cycle time. A simple completed example is shown in Figure 3. Hysteresis curve 3 is an idealized representation of the electrical response of a reflective interferometric modulator. χ axis representation

1077A-4732AA-PF ^^505 The applied voltage, and the y-axis represents the amplitude of the reflected light. The interferometric modulator exhibits a hysteresis because, when the applied voltage exceeds the pullback threshold, the interferometric modulator structure is activated and becomes highly absorbed. When the applied voltage is reduced, the applied voltage must be less than the release threshold κ to return the structure to the unactivated state. The difference between the pullback and the release threshold creates a hysteresis window. This hysteresis effect, and the optional addressing system, are disclosed in U.S. Patent Application Serial No. 08/744,253, filed on Jan. The hysteresis window can be used at any time by the sustain-bias voltage V», as so that the modulator can be driven or released in any state. Voltage V. " and corresponds to the voltage that must drive or release the interferometric modulator structure. This array utilizes power: the device is driven by applying voltage to the rows and columns, known as column and row drive theft. The interferometric modulator is fabricated using a pull back threshold of 6 volts and has a release threshold J Α of 3 tex. For such a device, the general values are "volts, volts, and 9 volts. =3" in the graph, the graph is shown in Fig. 3〇2, and the waveform type can be used to display a hysteresis curve. Class curve _. ::: Five voltages are required for 'two columns of dust and three rows.' The selected voltage, select, because 。 1. 1. Zero volts. The difference between the line voltage is w (four) and Vet) 10 is equal to ^, and the difference between V盥V- is equal to L. Conversely, se, F"' is equal to I, and the difference between v ^ v ', I.

Vsem and L. 1. The difference between them is equal to v. ". Addressing occurs; -, 5g,, ^ In the order, about ": and ... in the general address of the order.. ^ Ding's shell material is loaded into the column driver test during the picture 0, ρ data separately A and dynamic, One or zero of the root carry, resulting in the application of ^ or V.

1077A-4732AA-PF »1343505 At the end of the pressure reserve, the row driver 〇 is applied with Vseir. The pulse of the choice of value. This results in any interferometric modulator with v_ on the column causing the start-up' and having Ve on the column. " Any interfering modulator release. The data for the lower-row is loaded into the column, and a selected pulse is applied to the second, and is implemented sequentially until the last-line of the display w. Then, the address is started again from 玎〇, but at this time, the screen i appears. The difference between the pictures is similar to the conversion between the data and the column voltage. The binary zero is now represented by v_ and the row select pulse is now v-n. With this technique, the overall voltage polarity applied to the display array varies with each face. This is useful, especially for MEMS-based displays, because it allows compensation for any DC value charge growth, which occurs when only a single-polar voltage is applied. The increase in charge within the structure can significantly shift the electrical curve of the interferometric modulator or other microelectromechanical device. Color display image ▲Because the interferometric modulator is a multi-function device with various possible optical responses' - different color display images may have different characteristics. One possible structure develops a two-part dry (four) μ design, and the same interferometric modulator can achieve a color state, a black state, and a white state. This possibility can be used to take care of & Μ ® /preparation -r* ^ and Φ color image, can, background color + pigment,,. This term is used because this method is similar to painting coloring, which is produced by adding a pigment to a white background to obtain the desired color. With this method, a special painting can obtain any utterance and φ & Λ color' and obtain the desired saturation by controlling the addition of the pigment to the background. This method can constitute a display with color, black and white pixels.

1077A-4732AA-PF 11 1343505 As shown in FIG. 4A, a pixel 4 〇〇 includes five sub-pixel units 4 〇 2, 404, 406, 408 ′ each of which can reflect red 'green, blue, and white, respectively. All sub-pixels can produce a black state. The brightness control of each pixel can be accomplished by pulse width modulation, and the related art has been disclosed in Japanese Patent No. 5' 835' 255. At the same time, the relevant sub-pixel size is appropriately selected, which results in a very large degree of control of brightness and saturation of the pixel as a whole. For example, by reducing the total brightness of white sub-pixels, a saturated color can be obtained. Conversely, # is reduced by the brightness of the sub-pixels, = by simultaneously maximizing it with the white sub-pixels to obtain significant black and white. All changes in the middle can be easily obtained. /, color image controlled by the user as described above, in terms of resolution, grayscale degree, and clearness, 'as in the nature of the display based on the interferometric modulator, the second is more flexible. No performance. Within this range, it is possible to effectively provide a product using display control with f beyond the general characteristics. Or, the display system automatically adapts to different viewing needs. ..., for example, 'If you have some articles, you can use the black and white mode of the product if you want to watch the text. (5) If you want to watch high-quality color silence / , you can watch the dynamic writing. =Γ:Γ, or in another mode, the parent mode of the -w 込 class, in the range of the sinister work, the soil display form, the interference modulator of the w , 鍉 固 固 固 固The exchange of special attributes, false right requires a high-resolution picture, needs, and has to be black and white 'has the ability to obtain a high gray level. -... If it is only necessary to give the user the need for such translation, the controller can be restarted.

1077A-4 732AA-PP

12 1343505 has a certain band width ‘and therefore determines the configuration to some extent. According to the fact, any display degree is basically limited by the response time of the pixel unit to the amount of information that can be displayed in a given time.

A display architecture that can provide such flexibility has been described in the figure. In this block diagram, the executor controller logic operations 412, including programmable logic components and field programmable arrays (FPGAs), utilizing various IC techniques, provide the functionality to change components or can be reset after shipment. Such components are typically used for special applications such as digital signal processing or image compression, which provide high quality for such processing, and the use of such components during the product design phase while providing flexibility. The controller 412 provides signals and data to the drive electronics 414 and 416 for the address display 418. The conventional control system is based on 1 (or application-specific integrated circuits (ASICs), which effectively validate the program during manufacturing by its design function. - In this example, the program description includes several basic and Internal wafer layout of higher-level logic components (logic gates and logic blocks or gate components). By using field programmable components, such as FPG As, in hardware applications or hardware applications, The display setting can be loaded from the display control component from a component 410' such as a memory or a conventional microprocessor having a memory. The memory can be an EEpR〇Ms type or other programmable storage element; and the micro-processing The device can be implemented in a simple microcontroller type, and its function is to load a large number of applications from the memory into the FPGA in addition to the general functions of the processor processing products. The advantage of this method is that it has a simple and easy circuit diagram combined with it. A wide variety of display function settings and mixed display scan rates are available.

1077A-4732AA-PF ^43505 For example, 'one part of the screen may display text side with low-level resolution' while the other provides high-quality receiving e-mail display. This can be done over the entire bandwidth of the display by varying the display rate of the scan for different areas of the display. The low-order resolution text area can be scanned quickly and has only one or two—or two bits of grayscale density. High-resolution email areas can be scanned quickly, and the phase S is in two or four three- or four-bit grayscales. Changeable settings electronics This concept broadly includes, not only, the functionality of the display controller, but also the functionality of the overall product. Figure 4C shows a setup of a general portable electronic product 418 having programmable logic elements or equivalents to its core 420. In many display center personal electronic products, such as pDAs (personal digital assistants) and electronic universal notebooks, the central processing system - different versions of RISC processors, using fewer instruction sets. When the Risc processor is a more efficient CPU version, it boosts the functionality of more PCs, which still perform a repetitive work for the general-purpose processor's (4) many functions, such as fetching instructions from memory. In personal computers, energy consumption is not an issue, and users generally want to implement many complex application software. This relative view is for the general display of the center personal electronics σ _^β 卞 。. The mouth is right and wrong. It requires low energy consumption and provides a relatively small amount of relatively simple programs. Such a system facilitates programs that perform special functions, such as web browsers, calendars, drawing programs, 'telephone/addressing databases, and handwriting/speech recognition as a stone-like application. Therefore, when the user needs to perform the "power" mode, for example, 1077Α-4732ΑΑ-ΡΓ 14 [1343505] core processor changes the settings with the hardware application, and the user interacts with the product. Therefore, the processor of this hardware application, the various field programmable gate arrays displayed in its internal logic operations and connections have this difficult application (ie program) 'reconfigure and write when loading a new hardware application. . Many providers of this component also provide an application development system that allows for a specific programming language (a hardware narrative language) to be reduced to a logical representation that creates the appropriate processor. Many of the functions are also simplified or reduced to higher-level programming languages. One way to implement this processor is in the paper by K〇uichi Nagaini et al., Proc. IEEE Workshop on FPGA based Custom Computing Mechines, 1998.

Plastic Cell Architecture: Towards Reconfigurab1e Computing f0r GenerabPurp〇se,, expose. Referring again to FIG. 4C, the hardware application processor 420 is displayed in the center of a stack of I/O components and computer peripheral products that will be used, modified, or not depending on the functionality and characteristics of the currently loaded hardware application. The Council. The hardware application can be loaded from external memory in the memory 422 present in the product or via RF or interface 424, i.e., application content with a particular hardware application can be retrieved from a networked cellular network or other electronic device. Another example of a hardware application is that the audio interface 432 includes a voice recognition or voice synthesis rule system, the handwriting input 426 includes a handwriting recognition rule system, and the image input device 43 includes an image compression and processing mode. The production of this type. The port can perform a large number of functions by the function of its main part, the display field is the main user interface and the core processor can be changed. By comparing the total power of such components with the hundreds of milliwatts of the production

1077A-4732AA-PF 15 1343505 The combination is on the order of tens of milliwatts. The optical point of view of the optical point of view on December 19, 996, the application of the arm _, 947, and the year "*, national special: application No. 09/056 '975" is hereby provided, reference ^|| 51 ^Λ. , θ ^ , , 匕 路 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉This is done by the description of Fig. 5 and Fig. 5β. This statement also uses the electrostatic force to change the geometry of the interference space. The electrode 502 is made of: 〇 on the top and through the insulating film 5〇4 and the film/ Mirror_Electrical barrier. The function of the electrode 502 is only used as an electrode and is not used as a mirror. The optical cavity 505 is formed between the film/mirror 5〇6 and the second mirror 5〇8. Regarding the second mirror 508 The support system - a transparent superstructure 510, which may be a thick deposition of organic matter, such as SU8, polythionimide or an inorganic material. Determined by the sacrificial layer during fabrication, when no voltage is applied, such as '5th As shown in Figure A, the film/mirror is maintained at a predetermined position relative to the second mirror 5 () 8. The thickness of several thousand angstroms is suitable. For a starting voltage of approximately four volts. If the second mirror is made of a suitable material, such as chrome, and the mirror/film is made of a reflective material, the structure will reflect the given frequency that can be perceived by the observer 512. Light 511. In addition, if the chrome is about 4 矣 thin to translucent and the aluminum is relatively thin 'at least 5 angstroms and opaque, the structure can have a wide variety of photoresponses. 5C and The 5D image shows the response of the white and the color, respectively, determined by the length of the hole and the thickness of the constituent layer. Figure 5 shows the application of electricity between the main electrode 5〇2 and the film mirror 5〇6.

1077A-4732AA-PF 16 1343505 The result of the seat. The vertical setting of Jinshi Dong amine 罝 this / film / mirror surface, thus changing the optical empty length and the interferometric modulator 氺Μ learning characteristics. The 5c® display - a kind of reflected optical response, can have two borrowing #能^^~, and the black state 521 is indicated when the device is fully started, and the white state is white when the device is not activated. Figure 5D shows the optical response with color peaks 525, 527, and 529, respectively, in #蓝& in red. Thus the electromechanical operating state of the device can be controlled separately from its optical performance. The material and configuration of the main electrode, which affects electromechanical, may be selected from materials that do not include a second mirror; since it does not have the optical function of an interferometric modulator. This design can be made using the steps and techniques of surface micromechanics, for example, as disclosed in U.S. Patent Application Serial No. 08/688, filed on Jul. 31, 196, which is incorporated herein by reference. In another example, shown in Figure 6A, the support structure for the interferometric modulator 606 is placed in position to be hidden by the film/mirror 608. In this way, the number of inactive areas is effectively reduced because the observer only sees the area covered by the film/mirror and the minimum spacing between adjacent interferometric modulators. This is not the case in Fig. 5A. From the viewpoint of color, the film support is transparent and constitutes a structure that does not function. Figure 6b shows the same structure in the startup state. In Figure 7A, another geometric configuration applied to the interferometric modulator structure is disclosed. This design is similar to that disclosed in U.S. Patent Nos. 5,638, 〇84. This design utilizes a transparent plastic film that stretches anisotropically and thus naturally exists in a curled state. A voltage is applied to planarize the film as a microelectromechanical shutter. The function of this device can be improved by interfering with it. 1077A-4732AA-PF 17 B43505 Interferometric Modulator Change in Figure 7A, in which the film stack 7〇4 is the dielectric layer/conductive layer human insulating layer, July 07, 996, filed in US Patent Application No. 08 /688' The main part of the design of the inductive absorption interferometric modulator disclosed in 710 is hereby incorporated by reference. The voltage applied between the aluminum film 702 and the buildup layer 704 causes the film 702 to assume a flat shape relative to the buildup layer. At the time of manufacture, the aluminum 7〇2 also includes other reflective metals (silver 'copper, nickel), or is plated with a reflective metal in the dielectric material or in the inner layer of the organic material, and is disposed on a thin sacrificial layer, and the sacrificial layer can be wetted. Etching or gas phase removal techniques are removed. The aluminum film 7〇2 is further mechanically fixed to the substrate by a support tab 716 which is deposited directly onto the optical buildup layer 704. Because of this, the light incident on the area of the tab and the buildup layer is absorbed, so that this mechanically inactive area does not function optically. In this example and other interferometric modulator designs, this technique eliminates scattered black masks. The incident light 706 is not completely absorbed, or a portion of the frequency of light 708 is reflected according to the spacing of the deposited layers. This optical effect is an inductively absorbing interferometric modulator as disclosed in U.S. Patent Application Serial No. 08/688,71, the entire disclosure of which is incorporated herein by reference. The figure shows the condition of the device when no voltage is applied. The residual stress in the film causes it to curl into a tight roll shape. The residual stress can be generated by depositing a thin material & 718 over the film, which has a relatively high residual stress. In the case of chrome-based use, the thickness of the film in # is reduced to several hundred angstroms to obtain the inter-stress. As the film no longer obscures its light path, the beam 7 〇 6 is allowed to pass through the hoarding f 704 and through the plate 71 〇. Tablet 71Q can exist in no

1077A-4732AA-PF 18 1343505 is a state of high absorption or highly reflective (established color or white light). With respect to the modulators used in reflective displays, the optical buildup layer 704 can be designed to reflect a given color (if the plate 71 is absorbing) or absorbed (if the plate 710 is in a reflective state) when the device is activated. Rotary Startup As shown in Figure 8A, another interferometric modulator geometry is activated in a rotary manner. The electrode 802, an aluminum film having a thickness of about 1 angstrom, is formed on the substrate, as disclosed in U.S. Patent Application Serial No. 08/688,70, the entire disclosure of which is incorporated herein by reference. 8 〇〇. A support rod 808 and a rotary joint 810, a support shutter 812 and a reflective film 813 thereon are disposed. The support shutter can be an aluminum film having a thickness of several thousand angstroms. Its X-Y size is from tens to hundreds of microns. The film can be interferometric and designed to reflect a given color. A fixed interference stacked layer of inductively absorbing type is disclosed in U.S. Patent Application Serial No. 8/688,71, filed on Jan. s. It may also include a polymer immersed in a color dye' or aluminum or silver to provide broadband reflection. The electrode 2 and the shutter 812 are designed such that applying a voltage (e.g., 1 volt) between the two will cause the shutter 812 to partially or fully rotate the rotating hinge shaft. A shutter 818 is shown in a rotated state. Generally, for a known pixel, all of the shutters will be driven together by signals located at the common bus bar electrodes 8〇4. This shutter will experience electromagnetic hysteresis. If the distance between the rotating hub and the electrode is designed so that the electrostatic attraction of the electrode exceeds the spring tension of the rotating frame during rotation. The shutter will therefore have two motor steady states. In the operation of the penetrating mode, the shutter does not block the incident light.

1077A-4 7 32AA-PF 19 »43505 Xu Qi passed. Figure 8A illustrates a reflection mode in which incident light 822 is reflected back to observer 820. In one state of this mode, if the shutter is metal fabricated, the shutter will reflect white light, or if the shutter is plated with an interference film or a skimmer, it will reflect a given color or a set of colors. The thickness of the description of the interference stack and the resulting color are also disclosed in U.S. Patent Application Serial No. 8/688, filed on Jan. 31, 1996, which is incorporated herein by reference. In another state, 'light is allowed to pass through and is absorbed by the substrate 8', if the opposite side of the shutter is plated with an absorbing film or film. The 4 film may comprise another dye soaked organic film or an inductively absorbing buildup layer designed to absorb. Conversely, the shutter will be highly absorbing, i.e., appear black, and the substrate 800 is plated with a highly reflective film 824 or selectively coated with a dye film or interference film along the color reflective film lines as described above to reflect color. The operation of the apparatus can be further improved by the addition of the auxiliary electrode 814, which provides additional torque to the shutter, which induces electrostatic attraction when charged to an electrical source between the auxiliary electrode 814 and the shutter 812. Auxiliary electrode 814 includes a combination of conductor 814 and support structure 816. The electrode comprises a transparent conductor, such as ΙΤ0, which is approximately several thousand angstroms thick. All of the structures and associated electrodes are mechanically fabricated from materials that are deposited on a single-bottomed surface, such as a monolithic panel; and are therefore easily fabricated and can be reliably activated due to good control electrode spacing. For example, if the electrodes are placed on opposing substrates, surface variations of both the device substrate and the opposing substrate can be combined to produce a deviation of a majority of microns. Thus, the voltage that needs to affect the change can be varied by tens of volts. The structure of the monolith varies exactly with the surface of the 1077A-4732AA-PF 20 1343505 substrate and produces minor changes. Figure 8B shows the manufacturing flow for the rotary modulator, steps 丨7. In step 1, the substrate 830 has been plated with an electrode 832 and an insulator 834. The electrodes and insulator materials are aluminum and ruthenium dioxide, each having a thickness of one thousand angstroms. These are patterned in step 2. Sacrificial interval 836

A material, such as a plurality of microns of germanium, is deposited and patterned in step 3; then in step 4 is plated with a pillar/rotary hub/shader material 838, a tantalum of 1 angstrom thickness or Titanium / crane alloy. In step 5, material 838 has been patterned to form bus bar electrodes 844, support posts 840, and shutters 842. In step 6, the shading reflector 846 has been deposited and patterned. In the step ", the sacrificial interval has been etched away to produce a complete structure. Step 7 also reveals a top view of the structure, detailing the rotation hub of the support post 848, the torsion arm 850 and the shutter 852. The modulator, which is a two-bit device, requires only a small amount of voltage • # can drive the display. The driver electronics do not need to generate analog signals to obtain gray-scale operation. Therefore, the electronic components can be used on December 19, 1996. U.S. Patent Application Serial No. 08/769,947, the entire disclosure of which is incorporated herein by reference. Figure 9 illustrates this concept. Figure 9 is a basic switching block diagram having an input terminal 9〇〇 coupled to output 904 by applying a control signal 9〇2. Figure 9 illustrates how a row of drivers performs Make

1077A-4732AA-PF 21 1343505 used. The row drive $ used for addressing as described above requires three voltage values to be extracted. Applying the appropriate control signal to the row driver allows the input-to-input voltage selection to be provided to output 9G3. The input voltage is ^_ and Vb, as, corresponding to 906, deleted and 910 in the figure. Similarly, with respect to the column flips shown in the % graph, the appropriate control signal causes selection of one or other voltage value 'transmission to output 92'. This input voltage is the sum ground ’ corresponding to 914, 916 and 918 in the figure. Figure 9D illustrates how the logic device 932 is used. In this example, the -N excitation opens using the base switching blocks 934, 936, 938, and 94. All of the components can be configured and combined in this manner, which is provided in the fabrication of the display subsystem shown in Figure 9E. This system includes control logic 926, row driven stomach 924, column driver (10), and display array 930, and uses the addressing structure as described in FIG. The manufacture of this switching element, such as a microelectromechanical component, can be used to manufacture the entire display system in a single step. This switching manufacturing step becomes the second step of the interferometric modulator manufacturing step and is illustrated in Figure IX. - Step 1 shows the top view and side view of the starting platform. Arrow _4 table θ See the direction. Substrate] A sacrificial interval of 1 (10) 2, (4) 〇 0 0 has been deposited, and a pattern is formed on the surface. At the end of step 2, the material 数's several micrometers thick alloy has been deposited and exposed to form the source 10 drain 1 008 and the interpole structure 1 〇〇 6. An impervious metal of hundreds of angstroms, such as gold '铱 or platinum, can be plated onto this structural material to maintain low contact resistance during switching. A groove 2' is formed in the source shoe to facilitate the movement of the source rod in the plane of the parallel substrate. Comparing the upper circle with the front view, the perspective view also shows the difference between steps 3 and 4. Arrow number】〇】6

1077A-4732AA-PF indicates the direction of the front side. In step 3, the sacrificial material leaves 6敕ΛΑ, Ύ 〇, and is removed by the surname. The adjusted source pole is 1 010 and can move freely. The electrode 'source pole 10' is applied between the pole and the closed pole structure. The gate 2 (10) 6 of the drain pole is not in contact with the poleless ring 8, so the source is in contact with the centerless. The starting mode is parallel to the surface of the substrate. Therefore, the steps are: Applicable to the main interferometric modulator manufacturing step. This method needs to be used to manufacture a switch that is activated perpendicular to the surface of the substrate. Figures 10B and 10c illustrate the planar microelectromechanical cutting (d) The other two designs. The switch in (10) is different from the switch used in the switch between the drain and the source, and the source must be circulated. The rod takes the ground to 7%, and the current of the pole will affect the switching of 1' to complicate the circuit design. This is not the norm with the switch 1〇2〇. The switch in Figure 10C reveals another improvement. In this example, the U)40 electrically insulates the switching lever 1042 from the contact rod. The edge can be Si〇2, which can be used to form a pattern by depositing and exposing with known techniques. In the circuit of the switch, the switch is used to eliminate the necessity of electrically isolating the logic signal from the switching drive voltage. Needed. Multi-Dimensional Optoelectronic Structure a In general, the ultra-micro-element of an interferometric modulator has a beneficial optical power function and is activated by itself or with a starter associated with the ray, the electron, the mechanism or the optical device. Movable. The sub-layer of the monolithic structure of the interference film stack is generated as a multi-dimensional optoelectronic structure. In general, a photoelectric structure is defined, which can improve electromagnetic waves due to structural geometry and related changes. Travel. This

The structure of 1077A'4732AA-PF 23 can interact with light in the direction of - such as η * (four). The multidimensional structure is also like the difference of the photoelectric frequency f (ρβΓ, Ό structure (PBG s) or photoelectric crystal. John D Joannopoulos et al., written by Ph.t〇nlc Crystals", explains the periodic optoelectronic structure. One-dimensional PBG can appear in a continuous, nuclear-folding pattern. For example, Figure 16 shows the different types of interferometric modulators of the filter type and the 1坆 method. 4骐 stacked 1614盥—” U18, for example, the interstitial layer and the oxidized stone layer are the same. .. One of the four knives is thicker in wavelength and is fabricated on a substrate to form a central cavity with a central cavity 1 and a modulator structure. -5 stacked lines are continuous with X盥γ too A , ^ ^ β, due to the change in the refractive index of the material, has a periodic alternating ancient primal effect β in the Ζ direction, as long as they are the same, low refractive index layer with the spacing of the parent. This is considered to be one-dimensional in calving. Because of the most;: early-axis', for example, the light wave traveling in the 2-axis direction, periodic effect The two-dimensional map and the eleventh-first graph illustrate two kinds of two-dimensional light in the UA diagram, and the micro-rings have a total of one type and more P 4 benefits 1102 can be fabricated using known techniques using materials known by Xu Xi, such as five jw , .λ E ^ , —Oxide oxide alloy. Improved device with h wavelength in the range of 1.55 μm, one (four), ^1.0^, and Γ=1〇^. 'On a substrate 1100 (eg glass, f ± am ^ · * ii· ^ Xu ^ can be selected), the structure 'is a circular first waveguide, its refractive index and size within the Aohan 11 decided to enter the first frequency and mode of Dane. , class, and theft, if the design is correct, 选择 选择 田 田 选择 选择 选择 选择 选择 选择 选择 选择 选择 选择 选择 选择 选择 选择 选择 选择 选择 选择 选择 选择 选择 选择 选择 选择 选择 选择 选择 选择 选择 选择 选择 选择 选择 选择 选择 选择 选择 选择 选择 选择 选择 选择 选择 选择 选择 选择As indicated by the symbol "Ο!

1077A-4732AA-PF 24 1343505 In the plane. The one-dimensional analog of this device will be the manufactured Fukuda 4^ early-mirror-Pylo filter. Due to the single boundary layer (^ device can maintain - high-order optics a, no gate μ is more than a thousand cycles, however, the photoelectric structure can be considered. The side of the brother frequency effect is qualitative; the younger PBG is shown in the UB diagram. The column array 11.6 exhibits a refractive index that changes periodically: toward _ and 隹 斛 - - to the right side of the shape;

: In the XY plane of the symbol U03, the most significant influence is caused by the travel of this / and the electromagnetic propagation system. ★ Because of the natural nature of the period, the array of 帛11B is used together—the properties of the 44 film stack, except for its higher-order π ΛΥ plane, along the coordinate axes of the array, the array is periodic. The refractive index is changed between the cylindrical material and the surrounding material, and the surrounding material is generally a gas. Using the same principles applied to the thin film stacking design, it is appropriate to: < Measure the array, allowing the fabrication of a wide range of optical resonators (mirror, band pass filter, edge filter) acting in the χγ plane propagation. The array 丨丨〇6 shown in the example of Fig. 11 includes a distortion or defect 1108 in the form of a circle which is different from the size and/or refractive index. For example, the diameter of the cylinder is slightly larger or smaller than the other cylinders (eg, the diameter of the four-knife difference in diameter) or its difference is the material (eg, air versus dioxide). The entire size of the array is determined by the size of the optical system or component. , it must be handled skillfully. Depending on the characteristics required, this defect can also occur in multiple columns. This structure is similar to the dielectric Fabry, filter ’ in Fig. 61 but acts only in the two-dimensional range. In this example, the defect is similar to the hole 1 61 6 . The remaining cylinders are similar to adjacent two-dimensional stacks. l〇77A-4732AA-PF 25 I3435U5 The relevant dimensions of the structure of the figure are shown by the column spacing - (both can be regarded as a crystal lattice), the cylinder is straight]: between: a quarter wave is different from the ground r 』 . Class #, $ ' - Dimensional Equivalent, ® Column Diameter and Interval is a quarter-wavelength level 0)) The UI work... is determined by the need for the travel mode, and for the single-core expansion, there is a calculation of the female level... The structural rule acting on light, ', and proved by John D. Joannopoulos et al. in textbooks, Ph〇tonic Crystais. . And this structure is also manufactured using the same materials and techniques used to fabricate the resonator (10). A mono-film of, for example, 1 can be deposited on a glass substrate using conventional techniques and formed into a pattern, and then a column of the appearance ratio can be created using a reactive ion. For example, 'wavelength 155/zm, the diameter and spacing of the cylinder are 〇. 5 // m and 〇. 1 // m. The optoelectronic structure can also be guided to propagate under a limited geometry. Therefore, it is quite useful in terms of application, and when the size is constrained to be quite strict, it is possible to guide and/or select a predetermined optical frequency or optical band. It is also possible to fabricate a waveguide that transmits light traveling in the XY plane, forcing the light to moderately transition in a space less than the wavelength of the light. This can be done by creating a linear row of cylindrical defects that can be used as a waveguide. The three-dimensional structure is illustrated in Fig. 12. The three-dimensional periodic structure 1 2 0 2 acts on the propagation of travel in the XY, YZ and XZ planes. Various optical responses can be obtained by appropriate structural design and selection of constituent materials. Apply these same design rules, however, apply 3D here. Defects occur in points, lines or regions relative to points and lines, which differ from the surrounding medium in size and/or refractive index. In Fig. 12, the defect 1 204 is a single point element, but it is also possible that 1077A-4732AA-PF 26 1343505 can be a line or a combination of line and point elements or regions. For example, _, line type, 'bowl 蜓, array of defect points' can be made which is based on any three paths = over PBG' and acts as a tightly bound waveguide for transmitting light therein. Defects are generally located within them, but are shown on the surface for illustrative purposes. The relevant dimensions of this structure are illustrated in the drawings. The diameter of the coffee's spacing is completely related to the material, but the above design rules can also be used. Making a three-dimensional ms system is more complicated. Conventional devices for making one-dimensional or two-dimensional features, if applied to three-dimensional, will add more deposition, artifacts, and surname cycles to obtain a three-dimensional structure. Manufacturing techniques for fabricating periodic three-dimensional structures include: holographic development, in which a light-sensitive material is exposed to a standard wave and folded into a material to form a refractive index change pattern; a self-organizing organic material or a self-bonding material According to (4) some adhesion and the directional characteristics of a certain dissimilar kiln polymeric material, a cylindrical array or a spherical structure is generated during the deposition of the material, and the ceramic method can be added to provide a spherical structure to control the size into a liquid suspension, once cured, organized This structure can also be removed by dissolution or high temperature; a combination of the above methods and the like. Heterogeneous molecular polymerization techniques and self-binding techniques are of particular concern because both are low temperature and require little or no exposure to development. [This technique includes polymer dissolution, such as polyphenylquinic block polyphenylene. After the B solution of the WPPQmPSr 〇 carbon is coated on the substrate and the solvent is volatilized, a tight hexagonal arrangement in which the gas is filled in the polymer sphere is generated. This technique can be repeated multiple times to produce a number of layers; the period of the array can be controlled by the number of repeating units using the high molecular unit Μη). Use micron size, including metal, oxide semiconductor, with reduced

1077A-4732AA-PF 27 The effect of the array period, the step-by-step _ / 』 the refractive index of the molecule between the days. Defects are created by direct application of materials to tools such as submicron grade condensers. Beam 2 atoms j J is used for very small selections within the & domain, where materials are removed or added; and times are used to alter the optical properties of the material. It is produced when a particle beam having energy is used, for example, using a focused ion ΐ...: upper mouth to remove material. Material addition occurs when focusing on a volatile, gas-containing metal such as tungsten hexafluoride (helicopter conductor) or tetrafluoroethylene (insulated dioxane). The gas slows down and the composition deposits at the ion beam contacting the substrate. Another method includes the use of what is called microelectrode deposition (4). Details (4) U.S. Patent No. 5,641,391. In this method, a single microscopic electrode can be used to define the three-dimensional features of the resolution. Using the sub-micron of the substrate, the metal deposited by this method, the defect 〃 is generally oxidized' to form a dielectric defect surrounded by the m array, and the PBG array is fabricated using the above technique. There are features on the surface that v-Gamma is in the form of other material patterns, such as PBG arrays on the surface of the substrate; during the formation of defects, it can also be used as a template for defects in the pBG range. This is especially relevant for the m method, which is sensitive to the condition of the substrate, mainly the self-assembly method. According to the method: the nature of this method can promote or inhibit the PBG's 'growth' from the local area surrounded by the seed crystal twice. In this method, the defect ''seed, pattern can be made...before, during the formation of PBG, PBG is formed within the defect area. Therefore, the type of device known as an interferometric modulator is more

1077A-4732AA-PF 28, the first electrical structure is added to the modulator itself' and becomes more. Any light = structure, inherently a static device, can be changed by changing its geometry and/or changing its = (4) heart. (4) The ground's micro-fabric Fabri-Pylopo: (shown in Figure 16) 'contains two mirrors, each of which is a glimpse of light, which can be electrostatically changed by the hole width. Adjustment. Figure 13 shows two examples of the addition of a two-dimensional, earth-like interferometric modulator design. In Fig. 13A, a partially cut-away pattern reveals a self-supporting film 1 304' which is fabricated and fixed on the side facing the substrate and has a micro-ring resonator 13〇6. The waveguides ι3〇ι and 1302 lying inside the substrate 13〇3 are flat and parallel, and can be fabricated using known techniques. In Figure W, the interferometric modulator is shown in an undriven state, in a micro-ring. There is an air gap between the soil bottoms. The microring is fabricated so that its position overlaps and aligns with the pair of waveguides. The size of the microring is the same as the above example. Section 1 305 shows the dimensions of the waveguide, $ w = Umm and t = i 〇〇 nm. In the undriven state, light 13〇8 is undistributed within waveguide 1302, and the output beam 131〇 has a spectrum identical to incident beam 1308. The interferometric modulator is driven to force the micro-rings to closely contact the substrate and the waveguide, changing the optical properties of the device. Light traveling in the waveguide 13〇2 can be coupled into the microring by an evanescent phenomenon. This micro-ring, if properly sized, is an optical resonator that couples the selected frequency from the waveguide 〇3〇2 and introduces it into the waveguide 1301. This is shown in Figure 13B, where beam 1312 is shown traveling in the opposite direction of beam 1 308. This type of device can be used as a frequency selective switch; a special wavelength can be selected from the waveguide 1077Α-4732ΑΑ-ΡΓ 29 1343505 by applying a voltage or other driving device that requires the structure to be in close contact with the lying waveguide. come out. The electrostatic description of this geometry has been described in a paper by B. E Little et al., Vertically Coupled Microring

Resonator Channel Dropping Filter" , IEEE Photonics Technology Letters, vol· 11, no. 2, 1999. Another example is illustrated in Figure 13C. In this example, a pair of waveguides 1332 and 1330 and a resonator 1314 are fabricated in a cylindrical shape on a substrate. The PBG is the same cylindrical array, the waveguide is defined by removing two rows (each waveguide), and the resonator is defined by removing two columns. The top view provides a more detailed structure of the waveguides 1 330 and 1332 and the resonator 1314. The size is related to the important wavelength and the materials used. For the 1.55 " m wavelength, the diameter and spacing of the cylinder are 〇. 5 // m and 1 // m, respectively. The height h determines the travel mode, which will be supported and slightly larger than half a wavelength, if only a single mode is propagated. Two separate cylinders i3u are formed on the inner surface of the film 1315, which face downward; and like the cylinders on the substrate, have the same dimensions and the same material (or the same optical properties). The resonator and the cylinder are designed to match each other; a cylinder is correspondingly present in the resonator, wherein a cylinder is suitably disposed on the film. When the interferometric modulator is in an undriven state, it has a finite vertical air gap 1312 that is at least a few hundred nanometers between the PBG and the thin film cylinder, and thus no optical interaction occurs. The cylinder appearing in the resonator acts as a defect, creating a coupling between the waveguides 1330 and 1332. In this state, the device acts as shown in Fig. 13B, and the light selection frequency ' traveling along the waveguide is now injected into the waveguide 332 and travels in the opposite direction to the light 1077A-4732AA-PF 30 1343505 1329. The interferometric modulator is driven into contact with the PBG, however, placing the cylinder properly in the resonator changes its characteristics. The defects of the resonator are eliminated by arranging the thin cylinder. With the light 1 328 that does not interfere when traveling, the device in this state acts as shown in Figure 13A. A description of the static electricity of this geometry has been published in the paper by H A. Haus. Channel drop filters in photonic crystals" , Optics

Express, vol. 3, no, i, i998 〇 Optical Switcher In Figure 14A, the device according to the inductive absorber includes a self-supporting aluminum film 1400, located on the tens to hundreds of micrometers square, suspended in the material accumulation layer. At 1402, the buildup layer of material comprises a combination of a metal and an oxide and forms a predetermined pattern on the transparent substrate. </ RTI> <RTIgt; to

The film on the substrate also includes a transparent conductor such as IT〇. The structure may be followed by a metal film such as molybdenum or tungsten, a thickness of several hundred angstroms. This material is used so that in the undriven state, the device reflects a specific range of wavelengths and becomes as strong as possible when the film is driven into contact therewith. Side view 1410 shows a view of one of the devices, viewed from the side of the substrate. Beam 1408 is propagated within the substrate at any angle and is incident on an interferometric modulator 1406 that is shown in an undriven state. Assuming that the frequency of the light coincides with the range of reflection of the interferometric modulator in an untwisted state, the light is reflected at a complementary angle and away. Side view '1414, showing the phase in the drive state ^ 31

1077A-4732AA-PF

JKJJ Interferometric Modulator. Because the device is now no longer being reflected too much' and by interfering with the modulator's stack of ::: two light gauges, pairs; in the configuration 'manufacturing can be used as an optical switcher's interference modulation for the chopped base (four) light:: Very smooth, very flat (focus on light...: long: and the previous wavelength is still several times longer (at least hundreds of micrometers are used as the substrate/waveguide, where the beam travels in a certain direction, = parallel On the substrate, but from multiple reflections from one surface to the other surface. The light waves in this structure are often used as the substrate guiding waves. Figure 14B shows a variation of the invention. The film forming the predetermined pattern ^20' is no longer The rectangle is—the end of the tide is sharp. When the mechanical constant of the structure is kept constant along this length, the electrode area is reduced, and the force of applying static electricity to the tip of the cone is small. If the voltage is gradually increased The film is first driven at the wider end, and then when the voltage is increased, it will be activated in the direction of arrow 1428. For incident light, the + modulator acts as an absorption region where the area Q is determined according to the applied voltage value. 4 shows the result of propagating the beam on the substrate when no voltage is applied. The corresponding reflection region 1429, ie the perspective view of the incident beam, shows the interferometric modulator, showing that the beam overlaps the trace 143 in the reflection region because the entire region 1429 does not absorb, The beam 143 is reflected from the interferometric modulator 428 into the form of a beam 1432. In side view 1 436, a temporary voltage value is applied and the reflected beam 1440 has decayed to some extent because the displayed reflective region 丨437 P is injured. Absorption. Figures 1438 and 1429 show the results of the full effect and light

The 1077A-4 732AA-PP beam is fully attenuated. ^ τίκ J M can be modulated by optical attenuation. By using a reducer, the response is directly related to the applied voltage value. :: The optical switch is illustrated in Figure 15A. Selective structure measurement: using metal to make ', for example, thousands of angstroms of thickness #, in this way... a mirrored electrical connection. Mirror 1502 exists in transparent light

?' It is bonded to the support 1500. Mirror® 1502 can include a single metal film or metal oxide and a semiconductor film.

The stent is made of a material having a refractive index equal to or greater than the substrate. Ting can be a SiO 2 (same refractive index) or a high refractive index polymer having a variable refractive index. The brackets are manufactured to the specified dimensions, so the mirrors are supported at a 45 degree angle. Utilizing a yellow-like lithography technique, which can be completed according to a reticle that continuously changes its optical density. On a particular surface, a three-dimensional shape can be formed in the photoresist by appropriately varying the density and making the reticle exposure. This shape can be converted to other materials via reactive ion etching. The entire structure is suspended on conductor 15A, which has formed a predetermined pattern to provide a window 1 505 on the underlying substrate 1 504 that does not block light. In other words, a piece of conductor 15〇3 has been etched away so window 155 includes bare glass. This switching is similar to an interferometric modulator that can be activated to drive the entire structure into contact with the substrate/waveguide. Side view 1512 shows its optical properties. The beam 1510 is within the substrate and propagates at a 45 degree angle to the normal to prevent it from traveling beyond the boundary of the substrate. This is because the 45 degree angle is known as the critical angle, which allows for a small or no loss of reflection of the beam between the substrate and the external medium according to the Total Internal Reflection Theory (TIR). 1077A-4732AA'PF 33 1343505 The TIR theory is based on the Snell theorem' but there is a basic need that the refractive index of the medium outside the substrate is less than the refractive index of the substrate. The device in side view 1512 shows that the switch 1 506 is in an undriven state and the beam 1510 travels in an unobstructed manner. When the switch 15〇6 is activated and in contact with the substrate, the beam path is changed as shown in side view 1514. Since the stent has a refractive index greater than or equal to the substrate, the beam no longer undergoes a TIR at the interface. The beam exits the substrate and enters the optical support&apos; where it is mirrored. A specularly reflected beam at 45 degrees is allowed to travel perpendicular to the plane of the substrate. The result 'light can penetrate the substrate interface because it no longer satisfies TIR; and can be captured by a fiber coupler 152, the fiber coupler has been placed on the opposite side of the substrate/waveguide. A similar concept has been revealed in X. Zhou et al., 1 998, siDDigest, vol. XXIX, paper 1avegUide

Panel Display Using Electromechanical Spatial

Modulators々. This particular device is designed for illuminating display applications. The mirror can also be incorporated with a reflective grating that can be etched using conventional exposure techniques. However, this method shows wavelength dependence, and the loss due to multi-order diffraction is not the result of the film mirror. In addition, another optical structure can replace the mirror as its properties and shortcomings. This can be classified into refraction, reflection, and diffraction; and can include microlenses (penetration and reflection), concave or convex mirrors, diffractive optical elements, holographic optical elements, germanium, and any other form of optical element, and can be utilized Microfabrication technology is produced. In an example where another optic is used, the optics imparted by the stent and angle may be independent of the type of micro-optics. Use the decoupling switcher that uses the change of the genus as the light.

1077A-4732AA-PF 34 1343505 Surface design /63⁄4 5 Φ 'rK ίΠ- , '皮导Μ ^ Specific frequency can be arbitrary from the substrate / wave paste. The side view (4) shows more complicated improvements, in which - the additional fixed mirror, the opposite tilt of the 45 degree system "mountain A1&quot; on the base with the decoupling switcher. The mirror is different from the switcher" it can not be By carefully selecting the mirrors on the two structures, the cone I paralyzed and efficiently dissipates the light 1522 leaving the substrate by switching the piano 15〇6, and the γ s ~ surface is again lighted back to the United States. Can be mistaken by the re-lighting mirror π handle mouth back to the bottom. However, in the χγ^ n e. ^, λΥ 面 面 由 由 由 由 由 rs rs rs rs rs rs rs rs rs rs rs rs rs rs rs rs rs rs rs rs rs rs rs rs rs rs rs rs rs rs rs rs rs rs rs rs rs rs rs Any new direction. The combination of the two structures will be used as a direction switcher. The re-coupling mirror can also be used to couple anything that propagates into the substrate perpendicular to the surface. Figure 15 shows an array using an ancient- &amp; hemp... directional switcher. Overlooking the base 1 535, the linear array j 536 is a .. ^ . γν ^ first fiber coupled to the 3 y array, which guides the pupil perpendicular to the corner of the _χ γ plane Tang ^ 隹 ι _ soil bottom. A re-coupling mirror array (耒: shown) is directly disposed at a position opposite to the fiber consumable array, so that the light is merged into the surface parallel to the bottom surface of the beam, and a directional switcher array is fabricated. It is one of the 31 series. The switch is set in a special manner so that light from any of the input fiber couplers 1 536 coupled into the substrate can be directed to either of the mountains, λ output fiber coupler 1 532. Use this

The device of the method can be used as a learning switch for X, which can switch any different input to any different output. Modulable Filter Refer to Figure 6 for an interferometric modulator in the form of a _ 糸丨 糸丨 + + J modulation Fabry-Perot filter. In this example, a conductive contact pad 1 602 is accumulated, and

The i〇77A-4732AA-PF 35 is patterned with 3505 along the interface mirror 1604 and the sacrificial layer. This includes a stone film having a thickness that is a multiple of a half wavelength. The mirror may include (iv) a stack 'e.g., Τ1〇2 (high refractive index) and (10) (low refractive index), and has a high and low refractive index ' of germanium and the layer may also be air. The deposition insulation is wo and is patterned such that the second contact pad i6i2 is only in contact with the mirror. The mirror of the money case is deleted from the mirror Ύ (4), and the lateral dimension of the connection 1 by the support 1615 is mainly determined by the beam size of the interaction. Generally, it is about tens to hundreds of micrometers. The sacrificial layer 16G6 is partially chemically quarantined, leaving a suitably sized support to provide mechanical flexibility of approximately ten micrometers squared. The dummy (four) face-cut top layer and the bottom layer of mirror 1 604 are slightly doped to conduct electricity, and the voltage applied between contact pads 1 602 and 1612 will cause the mirror island to exit. Therefore, the optical response of this structure can be turned on. Figure i7A shows the application of this tunable filter. A modulatable filter 17G4, a mirror surface 1716, and an anti-reflection coating m2 have been fabricated on the upper surface of the substrate 1714. - Mirror 1717 has been fabricated on the underlying surface of the substrate, e.g., forming a -metal&apos; image of gold at least 1 GGnni thickness. Mounted on the upper surface of the substrate is an optical superstructure 1706 having an inner surface having a reflectivity of at least 95%, such as by an additional reflective gold film, and supporting a tilted mirror surface 1710. In this device, the beam 17 〇 2 travels within the substrate at an angle greater than the critical angle, with a critical angle of .41 degrees with respect to the glass substrate and the air medium. Therefore, it is necessary to keep the mirror 1716 fixed within the substrate/waveguide range. This configuration provides more flexibility in the propagation of light in terms of angle selection.

1077A-4732AA-PF 36 Howling 505 Beam 1702 is incident on Fabry-Pylo 17〇4, and when the remaining beam I?09 is reflected, light 1708 of a given frequency is passed. The transmitted frequency is incident on and reflected from the super-junction 1706 and then reflected by the mirror 1716 onto the inclined mirror 171G. The mirror Π 10 is suitably tilted such that light is directed at a vertical angle relative to the substrate toward the anti-reflective chain film 1712 and then into the outer surface. This device is used as a wavelength selective filter as a whole. ~ • $Structural Multi-Tech H includes the formation of precise depths of holes for a large number of micromachines, such as the thickness of the substrate and at least several hundred microns. After completing the hole engraving, the slanted mirror is fabricated and the entire assembly is bonded to the substrate, such as glass, using a number of 矽/glass bonding techniques in which the more detailed changes are made in Figure 17B. In this example, the second modulatable chopper 1 739 has been used to provide additional frequency selective

Road. In other words, 'two separate frequencies are now individually selectable. Sensor 1 738 is also added and provides a high degree of functional integration. The mascots have not been coupled into the base 1 7 7 ' and are incident on the 1 752 filter state. This coating is different from the 17th and 7th 7th _ ^ ^ 匕 filter 闽夂 1 7B ® , which includes the 爯刼 制造 制造 # # # # # # # # # # # # # # # # # # # # # # # # # # # # The selected ton i angle directly couples the wait angle into the base t. It includes the recoupling of the re-coupling frequency of the Μ 于 vertical 匕 δ in the first 175 直到 until the illumination is tilted. Mirror 1 760, which is the surface of beam 1 756. Therefore, the sniper is born straight ahead of this, and then traces the original path away from the device, to

1077A-4732AA-PF 37 ^43505 Use with other devices for optical connection. Beam 1 758 is incident on IC1 764 which can detect and interpret information within the beam. This IC can be an FPGA style, or other 矽, 矽/锗 or gallium arsenide device with integrated circuitry that has the benefit of directly coupling light carrying data. For example, a high frequency wide optical interconnect can be formed between iCsl764 &amp; 1762 by a two-way optical path control 1772 function. This is formed by a combination of mirror 1 766 and re-coupling mirror 1 768. If there are elements such as vertical hole surface emitting lasers (VCSELS) or light emitting diode LEDs, light is emitted by either ICs. Light is detected by any optical sensing element and according to the characteristics of the element fabricated by the semiconductor technology used to manufacture 1C. The light incident on the ic can also modulate the light incident on Ic by exposure to the substrate traveling light by an interferometric modulator already fabricated on the surface of Ic. Optical Mixer Using Substrate Waveguides Figures 18A and 18B illustrate a two-channel optical mixer having a τα variation using a substrate/waveguide. Figure 18A shows a schematic diagram of the device. &amp; contains a variety; leather long "with two stereotypes" skin &amp; Μ. And 1 803, divided and directed toward two independent variable attenuators "Μ. Then, they are output to a number of possible channels 18〇7 or enter-optical stop. Figure 10 (10) reveals another structure. This input light The device is guided into the substrate by the occlusion, anti-reflection chain, and coupled into the substrate by means of a re-mirror mirror 1806. This re-coupling mirror guides the optical wave, dividing the frequency reading beam and not guiding the direction toward the second adjustable (four) Wave, · its cutting = frequency" knife cheek rate; I 2 (light

1077A-4732AA-PF 38 1343505 Beam 1 81 7), beam of residual frequency! 8丨9 further travels via τ丨R. Along the path of the beam 1815 transmitted by the modulatable filter 1808, the light is reflected back through the mirror 1810 through an anti-reflective coating to the substrate/waveguide and recoupled into the substrate. The re-coupling mirror 1811 directs the beam 1817 toward the attenuator 1812 and then continues along the path parallel to the beam 1817 to continue selection by the second modulatable filter 18〇9. The two beams are moved in position by the function of the beam position changer 1816. This structure acts as a recoupling mirror, producing the same result, except that the mirror is parallel to the surface of the substrate. Since the mirror is suspended above the surface of the substrate at a fixed distance, the position of the incident point on the interface opposite the substrate moves toward the right. The displacement is determined directly by the height of the position changer. Light beam 1819 containing unselected wavelengths is also moved by the function of position changer 1818. The result is that all three beams are equally divided, as they are incident decoupled from the array of switches 1820 and 1824. These are optionally directed to direct the light beam into one of the two optical combiners 1 828 or into the sensor/sink ♦ 1830. Optical combiners can be fabricated using a variety of techniques. The polymer film is exposed to form a cylindrical pattern, and a top mirror is formed by reactive ion etching. The absorber/sensor includes a semiconductor component mounted to the substrate to provide an output power measurement as a benefit. The optical superstructure 829 supports the external optical components and provides a hermetic package for the mixer. The combination of this planar interferometric modulator and the substrate waveguide provides an optical component that is easy to manufacture, set, and external to the external because the device is present on the waveguide and/or superstructure and can be used in the waveguide and in the waveguide and super The role of light propagating between structures. Because all the components are in a flat manner

1077A-4732AA-PF 39 »Φ3505 Manufacturing' is economically efficient thanks to large-scale manufacturing on a large scale, and different parts can be easily and accurately fixed and fixed. In addition, because all of the moving elements are activated in a direction perpendicular to the substrate, they are relatively simple to manufacture and drive compared to more elaborate non-planar mirrors and beams. The active electronic component can be attached to either the superstructure or the substrate/waveguide for added functionality. Alternatively, the moving element can be fabricated as part of a superstructure, especially if it is a semiconductor such as germanium or gallium arsenide. Print manufacturing methods Because they are planar&apos; and because many layers do not have the semiconductor electronic properties that require special substrates, interferometric modulators, like many microelectromechanical structures, can take advantage of I technology, like the printing industry. Such methods generally include a flexible, continuous sheet-like pattern of paper or plastic. The reference screen printing method </ RTI> generally comprises a continuous roll of substrate material fed into a series of tools, each selectively coated with a dye to continuously produce a color pattern image. This step is important because it can be manufactured at high speed. Figure 19 is intended to illustrate a series of applications to a single interferometric modulator and by virtue of this extension to fabricate an interferometric modulator array or other microelectromechanical structure. Screen printing source 19 基底 base material, such as a transparent plastic roller. The representation area from the block material includes, for illustration, only a single device. / Pre-engraving tool 1 904 is stamped in a plastic plate - a recessed pattern. This can be done by a metal tape having a suitable protruding case with a surname 刻 ± ^ formed on the surface. The metal tape is fixed to a sinusoidal knot, / simplification, and is embossed with sufficient pressure.

1077A-4732AA-PF 40 1343505 The plate 'deforms the plastic to form a concave pattern. Figure 1906 has been described. The lithium film Is 1 9 0 8 is deposited by a known thin film deposition method, such as sputtering or evaporation, to deposit a 4-layer layer. The result is a stack 1910 of four ruthenium films comprising oxide, ^ L 〇 complex, oxide and a sacrificial film. These material buttons ^ , , , ^ ^ τ are equivalent to the inductive absorption interference modulation Is s. A device 分配9丨2 is dispensed, cured and exposed to photoresist to pattern these layers. As long as the pattern is combated, a thin film etch is applied in device 914. Alternatively, the pattern is completed using a known shot melting method. In this case, the 7-shot is swept across the material, allowing the substrate to move while entering the lamp. The frequency and power of the laser is sufficient to vaporize the required material to a micron size. Adjusting the frequency of the laser, so only with the material on the substrate, does not work with the melon ~ 'male and the substrate itself. Because the vaporization is too fast, the substrate is slightly heated. In the example of this device, the Tao film that has been recognized by the ancients is etched using the same pattern. As shown in 1 91, the photoresist is stripped by applying 奘罟]Q丨β to 1 916. The device 丨92 is another deposition device that sinks the gazette gas, and the product will become the structural layer of the interferometric modulator. About this layer 1 9 2 2 can be used. U_ u M a will be used. This material can also include organic materials that exhibit ', have very slight J stress, and can be deposited using a variety of pvD and Μ (4) techniques. This layer is exposed to a predetermined pattern m stripping photoresist by means of devices 1 924, 1 926 and coffee, respectively. Device 193G is used to remove the sacrificial layer surname. If this layer is Shi Xi, this purpose can be accomplished by using the gas phase surname. The result is that the self-supporting film structure 1 932 forms this interferometric modulator. The encapsulation device is packaged by securing the elastic sheet 1 933 to the upper surface of the substrate sheet. This can also be provided by continuous roller i 936.

1077A-4732AA-PF ^43505 Membrane device 1 934 is plated with a sealed film, such as a metal beta, which is bonded by a fixture 1937 to complete the packaged component 194. The force should be measured by the residual stress system to design and manufacture one of the micro-electromechanical structures. In interferometric modulators and other structures in which the structural members have been mechanically loosened during the manufacturing process, the residual stress determines the geometry of the members. This interferometric modulator, such as an interference element, is sensitive to changes in the final geometry of the movable member. The direct effect of the air gap that is reflected, or otherwise penetrated by the color cavity. As a result, varying this distance along the length of the cavity can result in unacceptable color variations. On the other hand, this property can be used to determine the residual stress of the structure itself and the degree of deformation of the component. The known deformation state of any material provides a measure of the residual stress in the material. Computer simulation programs and calculation rules can be determined using two-dimensional data on deformed bears. Therefore, the interferometric modulator can provide a means for this estimation. &quot;&quot; Figure m and Figure 20 show examples of how an interferometric modulator can be applied to this method. Interferometric modulators 2000 and 2002 are shown from the side and bottom (perspective substrate), respectively. They are in the form of double cantilever beams and single cantilever beams. In this example, the structural material does not have residual stress, and the two members show no deformation. From the bottom perspective substrate, the device displays the color of the uniform sentence, which is determined by the thickness of the spacer layer formed thereon. The interferometric modulations H 2_ and 2006 show a stress gradient 'because there is more compressive force than above. As a result, the structural film showed deformation 'and the bottom pattern showed a natural change in color caused by it. For example, if the color area 2〇16 is green, and the color

1077A-4732AA-PF 42 1343505 The color area 2014 is blue because it is close to the base. Conversely, when the color area 2018 (the display is located in the double cantilever beam) is red, this is because it is far from the base. Interferometric modulators 2008 and 2010 are shown in a state in which the stress gradient of higher tensile stress is shown above. The structural member is suitably deformed&apos; and the colored area is changed. In this example, when region 2〇22 is blue, region 2020 is red.

In Fig. 20B, a system is shown which can be used to quickly and accurately estimate the residual stress state of the deposited film. The wafer 2〇3〇 includes an array of interferometric modulator structures including a single cantilever beam film and a double cantilever film of variable length and width. The structural film is selected from materials that have been detailed in mechanical and residual stresses. Many materials are possible, but the material limited by the reflection conditions is quite small. The interferometric modulator in this example is not used for display purposes. Good alternative materials can include materials in the form of crystals (矽, aluminum 锗),

From the point of view of manufacturing, the 'shows a certain degree of reflection and its mechanical characteristics are characterized by a degree of precision that is manufactured and released, and the test structure' thus operates independently. If the material is not stressed, the structure will show no color change. However, "not so, the color state or color image can be recorded by using the high-resolution camera device 2, 34, and a high-magnification image can be obtained via the optical system. This camera device is connected to the computer system 2036. There is hardware on it, and ^ record and process image data. This hardware simply includes the door speed processing that is easy to obtain V; it is convenient to perform numerical calculation at a high rate. The software can include collecting color information and the order will use the deformation data to calculate the surface. A large number of routines for deformation. The core process determines the uniform stress and stress across the thickness of the film.

1077A-4732AA-PF 43 1343505 The best combination of gradients can produce all kinds. One mode used is to produce a large, undoped test wafer with a detailed record of the undeposited stress state, which is conveniently stored for use. While it is desirable to determine the residual stress of the deposited film, a test wafer is selected and the film is deposited on top of it. The deposited film changes the geometry of the structure and its color image. Using software that resides in the computer system, the two color images before and after the test wafer can be compared and the residual stress in the deposited film can be accurately estimated. It can also be designed to start the test structure after the deposition is completed. Observing the film during the initiation of the newly deposited film provides more information about the residual stress state, as is the film variation characteristics throughout the startup process. This technique can be used to determine film stress when depositing a film. Appropriately changing the sedimentary system, the generation-light path allows the imaging system to instantly observe the structure and track changes in color images. This forms an instant feedback system for controlling the deposition parameters in order to control the residual stress in this way. The software and hardware can refer to the period of the test wafer, and when the film is grown, the sink device controller is allowed to change conditions. Regarding the measurement of residual stress, 敕; 王 糸 is superior to other techniques', whether it is only relying on electromechanical activation, or a complex interference system to measure the deformation of the manufacturing structure. ^ Mussels drive electrons to a large array of devices, and the electrons provide the x-positiveness of the long-term displacement of Equation 1. The latter is limited by the optical properties of the film, uncomplicated external optics and hardware. And the need for a discontinuous film. Another material with interesting properties - its structure is classified as non-homogenous. These films are available in several versions, 35 gauges, and should be classified as discontinuous thin rafts at 1077A-4732AA-PF ΑΔ 1343505. Figure 21A illustrates a discontinuous film. Substrate 2100 can be a metal, dielectric or semiconductor having a poor corridor etched to its surface. This profile includes the appearance of each structure and should have a height of 2 丨丨〇, which is part of the wavelength of the coherent light, which is etched by the use of yellow lithography and chemical etching techniques to obtain an approximation by 2104 (triangle), 2106. The height described by (cylindrical) and 2108 (tapered). The effective diameter of the substrate at any individual height is also equivalent to the height level of the pattern. When each profile is slightly different, it still has the same characteristics, such as when a beam traverses into the substrate from the entrance, the refractive index gradually changes from the incident medium to the film substrate 2100. This structure is used as a preferred anti-reflective coating as compared to a multilayer enamel film because it is independent of angular measurement. Therefore, it maintains a high degree of anti-reflection for a larger angle of incidence. Figure 21B illustrates a coating 212 that has been deposited on substrate 2122 and can be a metal, dielectric or semiconductor. In this example, the film has been formed at an early stage, approximately less than the thickness of the 丨〇〇〇. During most of the deposition steps, the film undergoes a one-stage crystallization process, and the regions forming the material gradually grow until they are integrated into one another and form a continuous film at some point. Figure 21 24 shows a top view of the film. The optical properties of the film formed at an earlier stage are not the same as those of the continuous film. For metals, the film is more prone to exhibit higher losses than the same continuous characteristics. Figure 21C illustrates a third version of the discontinuous film. In this example, the ruthenium film 2130 has been deposited to a thickness on the substrate 2132, which may be considered continuous as at least one thousand angstroms. The hole 1077A-4732AA-PF 45 1343505 hole pattern is formed in the material by the same technique as the self-binding method described above. In this example, the polymer can be used as a reticle that shifts the etched pattern to the underlying material and utilizes the active ion engraving technique to name the hole. Since the material is continuous but perforated, it is not the same as the earlier stage film of Figure 21b. Conversely, its optical properties are different from those of an unetched film, where the incident beam experiences less loss and exhibits a peak of penetration depending on the surface. In addition, the geometry of the hole, like the angle of incidence and the refractive index of the incident interface, manipulates the spectral properties of the transmitted light. 2136 shows the top view of this film. Such films have been described in Tae Jin Kim's paper 'c〇ntr〇1 〇f optical transmission through metals perforated with subwavelength hole arrays. At the same time, it is a general structure, unlike PBGs. All two kinds of discontinuous thin amines, Miao Tian private workers: soil ^„ Al,

1077Λ-47 32AA-PF is exposed as above. However, it is not used. It can be used for modification and retouching without departing from the essence of the present invention. Therefore, the scope of protection of the present invention is attached to the patent field. The one defined by s shall prevail. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1A is a cross-sectional view of a display substrate having auxiliary light for anti-reflection plating; FIG. 1B discloses another configuration for auxiliary light; FIG. 2 is a detailed view The manufacturing process of the micro-mechanical arc lamp source; Figure 3 illustrates the driving structure of the bias center of the interferometric modulator array in the display; Figure 4A is a figure, the Banban Cheng νκ . , ^ ^ type according to the base + pigment &quot The concept illustrates the structure of the color bar.. Should not be the structure of the shoulder; the 4th R 圄 咖 么 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , Figure 2 shows the application of the above concept. The interferometric modulator geometry diagram reduces the optical actuator in the startup state in the unactivated state. The 5C diagram shows the non-interference modulation in the white spot. “ ',®, does not interfere with the design of the modulator: ::...Operation;... is a diagram showing many colors showing the pattern of the interferometric modulator, which reduces the optical effect, but the structure of the branch (4) Figure == The same design is in the startup ; FIG. 4 ^ 49 U of instructions in an anisotropic shape Hao the interferometric modulator at a thousand Sheng Bo, &quot;, the same figure shows the interferometric modulator is in another - from the shape.

1077A-4732AA-PF 47 T343505; Figure 8A illustrates the interferometric modulator, i borrowed ', straw turned from 靛 turn; 8B shows the manufacturing flow of the rotary interferometric modulator design; Figure 9A shows a microelectromechanical switch Block diagram; Fig. 9B is a block diagram of a column driver according to a microelectromechanical switch; Fig. 9c is a block diagram of a row driver according to a microelectromechanical switch; and (10) is a block diagram according to a face of a microelectromechanical switch Figure 9 shows a block diagram of a display system with MEMS utilizing logic and driver components; Figure 10A is a diagram that discloses the structure, fabrication, and operation of an interrogation MEMS switch; 1 〇ς % 啕樘 啕樘 啕樘 啕樘 啕樘 啕樘 啕樘 ; ; ; ; ; ; ; ; 啕樘 啕樘 啕樘 啕樘 啕樘 啕樘 啕樘 啕樘 啕樘 啕樘 啕樘 啕樘 啕樘 啕樘 啕樘 啕樘 啕樘 啕樘 啕樘 啕樘 啕樘 啕樘 啕樘 啕樘 啕樘 啕樘 啕樘 啕樘 啕樘 啕樘 啕樘 啕樘 啕樘 啕樘 啕樘12 is a picture, jl according to + 0 其 其 揭 揭 一 3- 3- 3- 3- 3- 3- 3- 3- 3- ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; Interferometric modulator; the same interference modulation of the nRth map The device is in a startup state; the 1st 3C system is the same as the interferometric modulator of the periodicity & 2-D photoelectric structure; the 14A is a description of the interferometric modulator design, which is regarded as a The optical switch is used; the 14th figure shows various changes of this design, and is used as an optical attenuator; the dry 15th 系 is a pattern of one thousand flavors, which is designed by the dry ν 制The function is - learning switch or an optical retreat without crying. The mouthpiece, the 15th figure shows how these interferometric modulators are combined and used as a --------------------------------------- Manufacturing process of the peripheral interferometric modulator structure; 1077A-4732AA-PF· A8 1343505 Figure 1 7A illustrates how the modulatable interferometric modulator structure can be selected as a deer length switch; the second figure shows the wavelength selection switch: 4 m for the solid-state component shows how the bump-bonding element is integrated; ~ Figure 18A is a schematic diagram of a two-channel equalizer/mixer; Figure 18B shows how the equalizer/mixer uses interference Modulator; Fig. 19 is a diagram illustrating the manufacturing flow of a continuous mesh base; Figs. 20A, 20B illustrate how the interferometric modulator test structure is used for stress measurement; and 21A to 21C description. [Main component symbol description] 100~AR coating; 1 02~glass layer; 104-arc array; 106~glass substrate; 1 0 7~interface; 108~interferometric modulator array; 109~ incident light; 11 0~ light Path; 111~reflector layer; 112~substrate; 114~interferometric modulator array; 116~light source; 118~ light guide; 120~collimator; 1 2 2~ light; 1 2 6~film stack; 128~observer 200~glass layer; 20b reflector bowl; 202~ sacrificial layer; 204~ reflector/composite metal layer 2 0 5~ light; 206~ deposited electrode layer; 1077A-4732AA-PF 49 1743505 300~ hysteresis Curve; 400~pixel; 404~green; 408~white; 412~ executive controller; 418~ portable electronic product 422~memory; 426~ handwriting input; 432~audio interface; 5 0 2~electrode rod; ~ optical hole; 508 ~ second mirror; 511 ~ predetermined frequency light; 521 ~ black state; 5 2 7 ~ green peak; 606 ~ interferometric modulator; 702 ~ aluminum film; 706 ~ incident light; 710 ~ plate; ~ thin material layer; 8 0 2 ~ electrode; 808 ~ support rod ; 812 ~ support shutter; 816 ~ support structure;

1077A-4732AA-PF 302~time diagram; 4 0 2~red; 406~blue; 410~ component; 414, 416~ drive electronic circuit; 420~ core processor; 424~RF or IR interface; 430~ image Input device; 500~ substrate; 504~ insulating film; 506~ film/mirror; 510~transparent upper structure; 512~observer; 525~blue peak; 5 2 9~red peak; 608~film/mirror; 7 〇 4 ~ stacked layer; 708 ~ part of the frequency of light; 716 ~ support adjustment piece; 8 0 0 ~ substrate; 804 ~ common bus electrode; 81 0 ~ rotating hub; 814 ~ auxiliary electrode; 81 8 ~ shutter 50 1343505 820 ~ observer; 830 ~ substrate; 832, 834, 836 ~ sacrificial compartment; 838 ~ pillar / rotating hub / shutter material;

840 ~ support column; 844 ~ bus bar electrode; 848 ~ support column; 852 ~ shutter; 902 ~ control signal; 906 ~ input voltage Vc 〇 n; 91 0 ~ input voltage Vb, as: 91 6 ~ input voltage VselFO; 920~output; 926~ control logic; 9 3 0~ display array; 934, 936, 938, 940 1 000~ base; 1 004~arrow; 1 008~汲 structure: 1 012 ~ groove; 10 24 ~ bungee; 842 ~ shutter; 846 ~ shading reflector 8 5 0 ~ torque arm; 900 ~ input; 9 〇 4 ~ wheel end; 908 ~ input voltage ve〇i〇; 91 4 ~ input voltage vsem; 91 8 ~ grounding; 924~ row driver; 9 2 8~ column driver; 932~ logic device; basic switching block; 1 0 0 2~ sacrificial interval; 1 0 0 6~ gate structure; 1010~source pole; 〇16~arrow: 1026~source; 1 0 2 8 ~ switching lever; 1 〇4 0~ insulator: 1100~ base; 1102~ micro ring resonator;

1077A-4732AA-PF 1 038~contact rod; I 0 4 2~switching rod; 1101, 1103~XYZ coordinates; II 0 6~ array; 1343505 1108~ defect; 1 200~ substrate; 1 202~3D periodic structure; 204~defect; 1301~waveguide; 1 302~waveguide; 1 3 0 3 ~substrate; 1 304~film; 1 3 0 5~profile; 1 306~microring resonator; 1 3 0 8~beam; 1310 ~ output beam; 1311 ~ cylinder; 1 31 2 ~ limited vertical air gap; 1314 ~ resonator; 1315 ~ film; 1326, 1 328 ~ uninterfered light; 1329 ~ light; 1 330, 1 332 ~ waveguide; ~ aluminum film; 1 402 ~ material stack; 1 406 ~ interferometric modulator; 1 408 ~ beam; 141 0 ~ side view; 1 4 1 4 ~ side view; 1420 ~ film; 1428 ~ arrow; 1429 ~ reflection area ; 1430 ~ beam; 1431 ~ overlap trace; 1432 ~ beam; 1434 ~ side view; 1 436 ~ side view; 1 437 ~ reflection area; 1 438 ~ fully absorbed state; 1 440 ~ reflected beam; 1 5 00 ~ support structure 1501~transparent optical support; 1502~mirror; 1 503~conductor 1 504~substrate; 1 5 0 5~window; 1 506~switcher; 1 51 0 ~beam; 1512~side view; 1514~side view; 1520~fiber coupler; 1077A-4732AA-PF 52 1343505 1 522~ Beam; 1 526~side view; 1528~reface mirror; 1530~beam; 1531~directional switcher array; 1532~output fiber coupler; 1 536~ linear array; 1 535~ substrate; 1 602~ conductive contact Pad; 1 606~ sacrificial layer; 1610~ insulating layer; 1614~ film stacking; 1 61 6~ center hole; 1 702~ beam; 1 706~ optical superstructure; 1 709-beam; 1712~ anti-reflective coating; Mirror surface; 1 738~ sensor; 1 750~ beam; 1756~ re-mirror; 1760~ re-surface mirror; 1764~ICs; 1768~ re-light mirror; 1 772~ bidirectional light path; ; 1 803 ~ light; 1 604 ~ mirror; 1 6 0 8 ~ mirror; 1612 ~ second contact pad; 1615 ~ support; 161 8 ~ film stack; 1 704 ~ modulate filter; 1 708 ~ light; 71 0 ~ mirror surface; 1714 ~ base; 1717 ~ mirror; 1 739 ~ second modulatable filter 1 752~ modulatable filter; 1 758~beam; 1762~ICs; 1 76 6~mirror; 1 770~ substrate; 1800~ fiber optic coupler; 1 802~ anti-reflective coating; 1 805~variable attenuator 1077A-4732AA-PF 53 T343505 1 806~ re-coupling mirror; 1 808~ modulatable filter; 1810~mirror; 1812~ attenuator; 1815~beam; 1817~beam; 1 81 9~beam; 1 824~ solution Coupling switch; 1 829~ optical superstructure; 1 900 ~ screen printing source; 1 906~ pattern; 1 91 0~ film stack; 1914~ device; 1918~ pattern; 1 922~ interferometric modulator knot 1 924~ device; 1 928~ device; 1 932~ self-supporting film junction 1 933~ elastic sheet; 1 936~ continuous roller; 2000~ interferometric modulator; 2004~ interferometric modulator; 2008~ interferometric modulator; ;

1077A-4732AA-PF 1 807~ channel; 1 809~ second modulatable filter; 1811~recoupling mirror; 1813~ optical stop; 1816~beam position changer; 1818~position changer; 1 820~decoupling Switcher; 1 828~ optical combiner; 1 830~sensor/absorber; 1 904~embossed pattern tool; 1 908~ coater; 1912~ device; 1916~ device; 1 920~ device; 926~ device; 1 930~ device; structure; 1 934~ coating device; 1 940~ package component; 2002~ interferometric modulator; 2006~ interferometric modulator; 2 01 0~ interferometric modulator; 2 01 6~ color area; 13435.05

2018~ color area; 2022~ area; 2034~ camera unit; 2100~ substrate; 2106~cylindrical; 2110~height; 2122~ substrate; 2130~ film; 2136~ film. 2020~ area; 2 0 3 0~ wafer, 2036~ computer system 2104~ triangle; 2108~ cone; 2120~ shovel; 2124~ film; 2132~ substrate;

1077A-4732AA-PF1 55

Claims (1)

1343505 Chinese patent application scope revision date: 99.12. VII. Patent application scope: ^ An image display device, including = interference modulator, the above-mentioned interferometric modulator includes. II - Interferometric modulation for outputting red light An interferometric modulator for outputting green light. At least - an interferometric modulator for outputting blue light; at least - an interferometric modulator for rotating white light. 2. 2. In the above-mentioned interferometric modulator of the first application of the patent scope, the interferometric modulator is used to output white light: the image display device is 4, the number of which is the above-mentioned interference for outputting red light. Double the number of 笳圊坌]. The ulnar device of the above-mentioned interferometric modulator for outputting white light according to item 1 of the monthly search range, wherein the size of the above-mentioned cutting modulator of the light is twice/about ^ output red 4- as _ please patent fan (four) 丨The above interferometric modulator comprises a $h$ image display device, wherein the device, the blue chirp modulator, a white interference modulation color coherence, the modulation pirate and the 'green interferometric modulator, Interference adjustment is recorded between the above-mentioned blue modulators in the above-mentioned cymbal, and &quot;modulation piracy and the above-described white interference modulator and the above-described color interference modulator are located between the above-mentioned red dry blue interferometric modulator. For example, the patent scope of the first range Jg #, +, the above-mentioned interference shadow (four), which makes the first interferometric modulator of at least J of the interferometric modulators appear red, green, or blue light with a phase Use between the reading b-(4) and a second interferometric modulator. The image display device described in the application patent (4)] ^^A^732M.Pfi, A 56 The above-mentioned interferometric modulator includes an interference &quot;, father-white interferometric modulator, - second white ^ pirate a red interferometric modulator, a blue interferometric modulation crying color interferometric modulator, wherein the red-interference modulator is located between the above-mentioned first color: step modulation The blue interferometric modulator is between the D 〇 and the second white interferometric modulator, and the green interferometric modulator is located between the first 疋, the color ray 7 and the first white interferometric modulator. The image display device according to Item 1 of the 葙 4 心 心 , , , , , , 第 第 第 第 第 第 第 双 双 双 双 双 双 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像 影像The apparatus is configured to output a blue &amp; interferometric modulator, and to interpret the above-mentioned interferometric modulator for outputting white light. Please use the image display device described in (4) ^ ^ W, its Yin Shuzhi &gt;, - used to turn white light, to output white light, dry step modulation, including multiple (4) 丨... modulation... and output white light The total size of the above-mentioned interference centering is approximately to output red, green: at least one of the modulators &amp; ρ ^ first twice the total size of the above interference. 9. If the patent application scope is, for example, TM, like the display device, 1Φ each for outputting red, green, blue, and white ', the above-mentioned interferometric modulator includes a moving film and a reflecting surface, and the reflecting surface is The film is only a mysterious wind. "The upper boundary between the movable and the 溥膘" - first learn the hole, and change the thickness of the above optical cavity. Move (four) film by moving to 10. As stated in the patent scope The image display device described in the item is configured to output red, green, blue and white light, wherein the medium 5 _ ^ 4lI as ... _ ' step modulator is electrically coupled to the control 15 for controlling the controller The brightness and saturation of the light of Shangcheng. "Modulation of the stolen output 1077A-4732AA-PF1 57 11. An image display device comprising at least interference of outputting colored light, less: an interferometric modulator for outputting white light. And the image display device for outputting the image, which is twice the number of the above-mentioned interferometric modulators of the preparation device P red light of the interferometer. Is used to output Μ to output white light above 1: second::: image display * device, its color 'light of the above-mentioned interferometric modulator size of two inches is about to output 14. As claimed The above-mentioned at least - for the purpose of turning out the colored light, is: "setting a first interferometric modulator for outputting colored light == bracket = the modulator is set in a first position . The above-mentioned first-interference: the image display device of claim 14, wherein at least the interferometric modulator for outputting white light comprises a set-position and an interferometric modulator for outputting white light, and the first position Adjacent to the above _ position. The image display device of claim 14, wherein the interferometric modulator for outputting white light comprises a plurality of: a second interferometric modulator for outputting white light, and the second The modulator is disposed at a first position and a third position, and the second and third positions are located on both sides of the first position. 17. The image display device of claim 14, wherein the first interferometric modulator for outputting colored light comprises at least three interferometric modulators for outputting colored light with 1077A-4732AA-PF1. The image display device according to the above-mentioned Item No. 11, wherein the interferometric modulator that moves to emit colored light comprises a movable film and a reflecting surface, wherein the reflecting surface is: : an optical cavity is defined between and /, and the thickness of the above optical cavity is changed. The mobile core is modified by the movement to change the above-mentioned at least the white light of the It: image display device for outputting white light, and the interferometric modulator includes a plurality of modulations... It is twice the total size of the above-mentioned dryer for outputting white light. The above-mentioned interferometric adjustment of the above-mentioned interferometric adjustment of the above-mentioned interferometric modulator of the above-mentioned patent range, the above-mentioned interferometric modulator for outputting colored light and the aforementioned interferometric modulator for outputting white light The system is electrically connected to the controller to control the brightness and saturation of the colored light and the white light. 10 7 7A-4 7 3 2AA-PF1 59