TWI318325B - Line-at-a-time electronic driving method and micro-electromechanical systems device - Google Patents

Description

1318325 IX. Description of the Invention: TECHNICAL FIELD OF THE INVENTION The present invention relates to an interferometric modulator. [Prior Art] Modulation::r=IMods) The optical characteristics of the micromechanical element are changed by operating the optical characteristics of the micromechanical element. Thousands of whistle & 叮 叮 爻 叮 叮 叮 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉 干涉~ Use different cognac Each of the different applications can be designed with a sinister modulator. [Summary of the Invention] 叩5 In the form, the display of the private 昍+ device, * " is characterized by interferometric modulation ° 'which will be anti-reflective coating or micro-刽, in general, recognize 1 • Auxiliary light source.

In the form, for the dry array or other matrix-driven device for the machine, the characteristic period of the present invention is generally a 鬲 efficiency driving system. It provides better flexibility as a color system, —.hn. 7|χ ITI7 = ) JU.

In one form, the background color of the M of the present invention can be re-assigned to the temple as an electronic device, capable. It is characterized by non-morphological and/or applied work—interference modulation reduces the operation of the interferometric modulator. In general, the device design 'has its self-interference state. In one form, the optical function of the 5-week device of the present invention

1077A-4732A-PF 6 1318325 ι and. In one form, the interferometric modulator design of the ^^^^^^^ driving device of the present invention. a is a selection in general, in one form, the device is characterized by a thousand and n-characteristics - interferometric modulation state interferometric modulation | g array, which is manufactured by changing arrays, 曰 / 々, / , MEMS switch or cut, or MEMS based logic connection. In general, in one embodiment, the present invention is applied to optical switching and optical modulation as an interferometric modulation. In addition, in one form, the device is characterized by an interferometric modulation/, consisting of 2-D and 3-D photoelectric structures. Generally speaking, in a form, the invention is characterized in that each of the modulated light is in a form, and the invention is characterized by a microelectromechanical system and a package according to a continuous mesh supply program. method. In general, in one aspect, the invention is characterized in that in the deposited film, the interferometric modulator acts as a test structure for calculating the residual stress. [Embodiment] Anti-reflection coating A previously described interferometric modulator design (in U.S. Patent Application No. 2, filed on November 6, 1995, "C 4 η 〒月业弟08/554, No. 630" The design 'as a reference here' is a black state in which light of "_ 7% is absorbed on its surface. This contributes to the reflective display. This kind of interference in the juice The controller reflects light of a given color in an unactivated state and absorbs light in an activated state.

1077A-4732A-PF 1318325 Because the interferometric modulator array is formed on a substrate, the absorptive capacity is reduced by the intrinsic reflection of the substrate. In the example of a glass substrate, the amount of reflection is typically about 4%, exceeding the spectrum of visible light. Thus, although the interferometric modulator structure has the ability to absorb light, the black state can only be as dark as possible, and the frontal reflection from the substrate still exists. One method of improving the overall performance of an interferometric modulator-based display is by using anti-reflective coatings. This coating can be

A dielectric film comprising - or more layers deposited on the surface of the substrate and designed to reduce reflection of the substrate. There are many possible ways to design and manufacture such films. A simple film design is a single film of magnesia, which is approximately one quarter wavelength thick. Another method is to deposit a fluorinated (tetra) quarter-wave film on the glass i, followed by a quarter-wave film of magnesium carbide, and another method is to add a zinc sulfide film. Display to improve the performance of the display system. In the figure u, the coating 100, as described above, may include a layer or a surface of the glass layer 1() 2 on the glass substrate 1G6, which is deposited by bonding more light into the glass layer 1 〇 2: This AR coating _ reflection relief. The result is that when interfering with the facet, more incident light incidents can be made to interfere with the absorption mode to achieve a darker display state. This AR is plated on the !P column and still on the surface with the interferometric modulator array. ', can be deposited directly on the surface

1077A-4732A-PF 1318325 * Integration 糸 Figure 1A also shows how the auxiliary light is illuminated on a display. In this example, the illuminating mirror is fabricated in the glass layer 丄〇 2 using an arc lamp array 1 〇 4 . The efficiency of the arc lamp is the source of the light source. According to historical facts, arc lamps have been manufactured using the same bulb manufacturing technology. A typical style of such a lamp is described in U.S. Patent No. 4,987,496. Manufactured - glassware, and separately fabricated electrodes are enclosed in glassware. After filling the appropriate gas, the glassware is sealed. Although this bulb can be made very small, its manufacturing method may not be suitable for manufacturing a large number of bulb arrays. Techniques for fabricating microelectromechanical structures can be applied to the fabrication of microdischarge or arc lamps. Because of the microscopic size of such a 'micro lamp', the applied voltage and current are significantly less than the voltage plate current supplied to the arc lamp manufactured in the conventional manner. In the example of Figure U, an array can be fabricated, with the first 113 emitted by the lamp directed to the interferometric modulator array 108 by the reflector & lu of the body, as described below. • The 帛2 diagram provides a detailed description of the lamp and is optimized for use in flat panel displays. The process is described below. As shown in step ^, wet or dry chemistry (4), (4) - glass layer is used to form the reflector T. The depth 舆 shape of the bowl produces a broad reflected beam distribution by a shallower bowl for each light source and a parabolic shape, while the parabolic shape parallelizes the reflected light. The diameter of the bowl is changed from about p1G to several hundred microns. This size is readily accepted by the display area of the display area. Microlights must also be considered. 1. Density. Utilize general deposition techniques such as deplating, and standards

1077A-4732A-PF 1318325 II: Shadow Technology 'Deposition-reflector/composite metal I 2. 4 and sacrificial layer form a defined pattern. The reflector/composite metal layer can be a stacked film 'which includes an ejector" and a complex metal such as iodide iodide. This is a strong metal, not necessary, can be increased. This sacrificial layer can be a layer, such as Shi Xi. The special electrode 1 has an electrode layer 2〇6 and forms a predetermined pattern to form two=open electrodes. This material can be a high temperature resistant metal such as a crane; and. There is a full thickness of mechanical cut, which is about several thousand angstroms. After the absence; !^202 + is sealed on a glass plate, such as a substrate (as shown in Figure 1), with the reflector in the basin facing the plate. A gas, such as a sputum, is used to backfill the above air:, = formed in the step of sealing the bulb, and the Lili is approximately - atmospheric pressure. This can be done in a sealed chamber that has been previously filled with air. Applying a sufficient voltage to the electrode of the ^^ bubble will cause a discharge, gas between the ends of the two electrodes, and crying? The first 205 of the crucible faces away from the direction of the reflection 204. If the gate interval is approximately a few hundred microns or less, the electricity is reduced to several volts. If the electrode material deposits a small amount of pressure, =2: the position of the electrode will be determined in the bowl. In this example, I will create a mine to remove the day guard, how much pressure should be left, and the electrode is private, then the thickness is determined to compensate for the displacement. — s , the thickness will be only a few microns deep in the depth of the bowl. ‘About several to tens of times. Referring again to Figure 1A, showing #,, 儿—^., first/σ path 113. Therefore, it is first directed toward the interferometric modulator array to act at that pole and is sequentially reflected by the heart 10 1318325 along the path 110 toward the interface 107 and the viewer 111. It is also possible to manufacture a lamp without a reflector layer so that it will illuminate in all directions. Lamps with or without reflectors can be used where micro light sources or subtle, source arrays are required. This may include a projection display, a light source that emits a flat panel display or a conventional light source for the interior (home, house) or an external (car, flash) light source.

Referring to Figure 1B, an alternative auxiliary light method is shown. The light guide ι 8 includes a glass or plastic layer that adheres to the base 12 . Light source U6, such as a fluorescent lamp, an array of LEDs, or the above-described micro-production array, may be included in any of the following sources: on the opposite side of the light guide. The light 122 is collimated into the light guide using the collimator 12 so that most of the light is captured within the light guide via total internal reflection. The scattering iridium is plated - a material or film stack 126, forming a reflective surface facing the substrate (1) and an absorbing surface facing the viewer 128. When light trapped in the light guide is incident on the scattering ridge, the internal all-inverse (four) condition is no longer observed and some portion of the light is in all directions (four). The scattered light of the nearby medium I can be vertically entered, that is, toward the observation I 128, which is reflected into the substrate Π 2 due to the 134. Similar to the above-mentioned miniature light bulbs, the loose mats can be made in an array, and each of the early rows is as large as the displayed portion, making it almost impossible to detect when looking directly. When the size is quite small, about ten microns, a sufficient auxiliary 'column 1 U τ ^ . can be provided because of the light efficiency of the 'under the interferometric modulator array' itself. The shape of the scattering pad is rectangular or of any shape 'which reduces the perception of the viewer.

1077A-4732A-PF 11 1318325 _ Addressing elements in the array In order to activate the interferometric modulator array and coordinate for display, a continuous voltage is applied to the rows and columns of the array, generally referred to as the timeline . The underlying concept is to apply a sufficient voltage to a particular row, so that the voltage applied to the selected column causes the cells on the selected row to be initiated or cancelled according to the column voltage. The threshold and the applied voltage must be such that the cell above the selected row is affected by the applied column voltage. By sequentially selecting the rows included on the entire display, the entire array can be addressed in one cycle time. A simple completed example is shown in Figure 3. Hysteresis curve 3 is an idealized representation of the electrical response of a reflective interferometric modulator. The x-axis represents the applied voltage and the y-axis represents the amplitude of the reflected light. The interferometric modulator displays the hysteresis because, when the voltage is increased beyond the pullback threshold, the interferometer is activated and becomes highly absorbed. When the applied voltage is reduced, apply Π

Pull back the release threshold to return the structure to an unactivated state. Pull the mouth with the release threshold and ask for the Ml g1 and the... hysteresis window. This hysteresis effect, :::::, has been disclosed in the U.S. Patent Application Serial No. 08/744,253, the entire disclosure of which is hereby incorporated by reference. Any of the guards, the hysteresis window can be used by maintaining an interferometric modulator so that it corresponds to any state. Voltage ¥. " with Von φ /, moving or releasing the voltage of the interferometric modulator structure. Μ Using an electronic device by applying an electric & array driver. The interferometric modulator utilizes the pull back threshold::: is manufactured for column and row release thresholds of 3 volts _ ^ 特 , and volts. For such a skirt, about ν_, ν_

The values of 1077A-4732A-PF 12 1318325 are 4.5 volts, volts and 9 volts, respectively. Fig. 3 shows the type of waveform, which can be used to apply, dry "modulator array, display-hysteresis curve 3 0 0. There are five voltages, two columns of voltages and three rows of voltages. The voltage selected, V. . " is twice the value of ^ and is zero volts. The line voltage is wide, so the difference between Vs_ and ^ is equal to L, and the difference from the amount such as = is equal to V°f", the difference between Vsein and L.11 is ^' and ^(1) and Vc. The difference between the two is equal to V. " The address occurs in the screens 0 and i of the second choice. In general address: the line is loaded during the screen 0 i: material:: The binary - or zero, results in the application of a voltage value of 1. When the data is finished, u 1 dynamically applies a selected pulse with a value of vse F0. The result is that the column is separated from the other, with Vc. Any interfering modulator of 10 causes the start-up and is released on the column and right v-〃, any interfering modulator is released. The data about the next frame is loaded into the column, and the __ line is executed and sequentially executed until the display The rushing is applied to the last line of the main J. The 〇 〇 定 定 定 接 接 接 接 接 接 接 接 接 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 - - - - - - - - - - The difference between the data and the & λλ Thai Han magic voltage is similar, the binary zero is now by VcQifl, v, 乂The selection pulse is now km. Using this technique, it is applied to every screen-variation. This is the overall voltage polarity of the "Essence, 歹" used with the same as the field & heart 0, especially for MEMS-based display Not helpful, because for any such value ^, when only a single-polarity is applied. At 7 曰 补 ’ ’ 廷 廷 廷 廷 廷 廷 廷 廷 廷 偏移 偏移 偏移 偏移 偏移 偏移 偏移 偏移 偏移 偏移 偏移 偏移 偏移 偏移 偏移 偏移 偏移 偏移 偏移 偏移 偏移

1077A-4732A-PF 13 1318325 Color-capable H/eight-week system is a multi-function with various possible optical responses;;; two-color display images can have different characteristics. -#丨 has a part of the interferometric modulator design, the same = the device can get the color state, black state and white state. This can be used for the month & ιν #β, & color image, can, background color + pigment. With the = system, this method is similar to the coloring of the edge, which is produced by adding the color of the pigment: white background to the mixed temperature. Using this method, the color in the spectrum is specifically obtained, and the desired saturation is obtained by controlling the addition of the pigment to the bottom, the knife and the 3rd. This method can constitute a display with color, ..., color and white pixels. = The pixel _ shown in Fig. 4A includes five sub-pixel units, 6, and the per-pixel can reflect red, green, blue, and white, respectively. All sub-pixels can produce a black state. Each time is completed using pulse width modulation, and the related art has been disclosed in the United States '5, 835, 255. At the same time, the appropriate selection of the relevant sub-pixels causes the pixel as a whole to have a very large degree of control brightness and L^column, such as by reducing the total brightness of the white sub-pixels, to obtain the balance and color. Conversely, by reducing the brightness of the color sub-pixels, and by maximizing them with the white sub-pixels at the same time, significant black and two modes can be obtained. All changes in the middle can be easily obtained. Color image of user-controlled _ color image as described above, s 4 epidemic class, resolution, grayscale degree and clarity

1077A-4732A-PF 14 1318325 In terms of temperature, it is like the nature of an interferometer-based display for more vivid display performance. For this purpose, it is possible to effectively provide users with display control that exceeds the general characteristics. Alternatively, the display is automatically adapted to different viewing needs. For example, if the text is used, the user may want to use a black-and-white model. However, in another situation, the user may want to view a south-quality color still image, or in another mode, watch the dynamic face. Each of these modes requires the exchange of special attributes as much as possible within the range of the provided interferometric modulators. Exchanging, if a high-resolution face is required, requires a low update rate; if it is black and white, it has the ability to achieve a high gray level. In order to give the user the flexibility of two inches, the controller hardware can be reconfigured to some extent. According to the fact, any significant A ώ w 1 shows not only a certain band width; it is basically limited by the response time of the pixel unit, and therefore determines the amount of information that can be displayed in a given time. A display architecture that can provide such flexibility has been illustrated in Figure 4B. In this block diagram, 'execution of controller logic operations 412, including programmable logic elements and field programmable inter-array arrays (FPGAs)', provides the ability to change components or can be re-set after shipment. Components of this type are typically used for special applications such as digital signal processing or image compression. This type of processing provides high quality and adds flexibility to the use of compelling components during the product design phase. The controller 412 provides signals and data to the drive electronics 4U and 416 for the address display 418. The conventional control system is based on ΐ (: or application characteristics)

1077A-4732A-PF 15 1318325 4 Integrated Circuits (ASICs), which are borrowed during manufacturing. In this example, 侔 侔 = 广 有效 广 广 广 广 广 广 你 你 你 你 你 你 你 你 你 你 你

:: Γ 更 高 高 高 高 高 高 高 高 高 高 高 高 高 高 高 高 高 高 高 高 高 高 高 高By using field programmable components, such as PLAS II: in hardware applications or hardware applications, different display settings can be from a component 410, such as the Indiana IW^ or Baizhi. Memory

Manned display control elements. The memory can be deleted from the 0MS type or other programmable storage elements; and the microprocessor can be used in a simple microcontroller type, the function is to load a large number of applications from the memory into the FPGA 'except the processor processing products Beyond the function. The advantage of this method is that 'm is a circuit diagram with a related ease' combined with it to achieve a wide variety of different display function settings and mixed display scan rates. For example, one part of the screen may display text in low-level resolution while the other provides high-quality receiving email display. This can be done over the overall bandwidth of the display by varying the display rate of the scan for different areas of the display. The low-order resolution text area can be scanned quickly and only if it is one or two—or two bits of grayscale volatility. High-resolution email areas can be scanned quickly and are equivalent to two or four three- or four-bit grayscales.

This concept broadly includes, not only, the functionality of the display controller, but also the functionality of the overall product. Figure 4C shows that the portable electronic product 41 8 has a programmable logic element or an equivalent 1077Α-4732A-PF 16 1318325 4 at its core 420. In many display centers ^, v R ^ personal electronics, such as PDAs (personal digits. τςΓ. φ ^books' central processor system - different versions = it uses fewer instruction sets. When the processor is more ΓΓ At the time of 'improving the functionality of more personal computers, it is still a general-purpose processor that consumes a lot of energy to perform repetitive tasks, such as capturing instructions from memory.

For personal computers, energy consumption is not an issue, and users want to perform many complex applications. This relative view is correct for general (5) central personal electronic products. It requires low energy consumption and provides a relatively small amount of relatively simple program. Such a system facilitates the execution of special programs such as web browsers, calendars, drawing programs, live/addressed databases, and handwriting/voice recognition as a hardware application. Therefore, when the user needs to perform a special function mode, for example, a pass f 'core processor changes settings with the hardware application, and the user and the processor that is the hardware application are displayed in the internal logic # The various field programmable gate arrays in the link have & difficult applications (ie, programs) that are reconfigured and written when a new hardware application is loaded. Many providers of this component also provide application development systems that allow specific programming language 5 (-hardware narration language) to be reduced to a logical representation that creates the appropriate processor. Many of the functions are also simplified or reduced to higher-level programming languages. One way to implement this processor is

Kouichi Nagami et al., Proc. IEEE Workshop on FPGA based Custom Computing Mechines, 1998

Plastic Cell Architecture : Towards Reconfigurab 1 e

1077A-4732A-PF 17 1318325 虡

Computing for General_purp〇se/’ exposes. Referring to FIG. 4C, the hardware application processor 420 is displayed in the middle of a stack of I/Os and computer peripheral products, which will be used and modified according to the functions and characteristics of the currently loaded hardware applications. Or ignore it. This hardware application can be self-existing in the memory 422 in the product or via the RF or IR interface: external resource loading 'is to extract application content with special hardware applications from the network, cellular network or other electronic devices . Another example of a hardware application is that the audio interface 432 includes a voice recognition or speech synthesis rule system. The handwriting wheel entry 426 includes a handwriting recognition rule system and an image compression and processing mode. Such products can perform a large number of (4) functions by their main parts, and the display is: the main user interface and the settable core processor can be changed. By combining hundreds of milliwatts of current products, the overall power mix for such components is on the order of tens of milliwatts. From the optical point of view, the singularity of the U.S. Patent Application No. 触8, No. 947, and the U.S. Patent Application No. 56,975, filed on April 4, 998. Reference is provided herein, which has disclosed that the interference calibrator's proposed electromechanical work from its optical function to reverse the interferometric modulator. Another method can be accomplished by the description of Figure 5A and Figure 5β. The use of electrostatic forces changes the geometry of the interfering holes. The electrode 502 is fabricated and is "blocked" by the insulating film 5〇4 and the film/mirror. The function of the electrode 502 is only used as an electrode, and

J077A-4732A-PF 18 1318325 m Used as a mirror. An optical cavity 505 is formed between the film/mirror 506 and the second mirror 5〇8. The support for the second mirror from 508 is a transparent superstructure, which may be a thick deposit of organic matter, such as polysulfide or a slewing material. The film/mirror is maintained at an adjacent position relative to the second mirror 508 as determined by the sacrificial layer during the manufacturing process by the sacrificial layer. The thickness of several thousand angstroms is suitable for starting power of approximately four volts. If the second mirror is made of a suitable material, such as chrome, and the mirror/film is made of a reflective material, the structure will reflect a given frequency of light that can be perceived by the observer 512. In addition, if the chromium is about 4 angstroms, thin to semi-transparent, and aluminum is relatively thin, at least 5 〇〇 ^ 3 angstroms and opaque, the structure can have a wide variety of photoresponses. The fifth (: 口口兴乐图, respectively showing the response of black and white and Μ) is determined by the length of the hole and the thickness of the constituent layer. Figure 5 shows the application of voltage between the main electrode 502 and the film mirror 5〇6. As a result, the film/mirror is vertically disposed, thus changing the optical hole = and the optical characteristics of the interferometric modulator. Figure 5C shows the reflected photon response, which can have two states, when loaded, 9t ^ Tian Ai 70 The black state is fully activated to set the white state when it is not activated. The 5D figure shows the optical response of color peak shift, 527 and 529, which are equivalent to blue, green and color: respectively, so the electromechanical operation state of the device can be The material of the two mirrors is controlled separately from its optical properties; because it does not;;::' can choose not to include the optical function of the first interference § circumstance. This can be fabricated in 1996 using the steps and techniques of surface micromechanics. U.S. Patent Application Serial No. 08/688, 71 0, issued July 31, 31

1077A-4732A-PF 19 1318325 and is incorporated herein by reference. In another example, shown in Figure 6A, the support structure for the interferometric modulator is placed in position to be hidden by the film/mirror-608. In this way, the number of inactive regions is effectively reduced because the viewer only sees the area covered by the film/mirror and the minimum spacing between adjacent interferometric modulators. This is not the case in Fig. 5A. From the viewpoint of color, the film support is transparent and constitutes a structure that does not function. In the 6th figure, φ exposes the same structure in the startup state. In Figure 7A, another geometric configuration applied to an interferometric modulator structure is disclosed. This design is similar to that disclosed in U.S. Patent No. 5,638, No. 84. This design utilizes a transparent plastic film that stretches anisotropically and thus naturally exists in a curled state. A voltage is applied to flatten the film as a microelectromechanical shutter. w The function of this device can be improved by interfering with it. The variation of the interferometric modulator in Fig. u, wherein the film stack 7 〇 4 is a dielectric ... conductive layer / • insulating layer, which is disclosed in U.S. Patent Application Serial No. 08/688, filed on Jul. 31, 1976. The main part of the design of inductive absorption interferometric modulators is listed here. The voltage applied between the aluminum film 702 and the buildup layer 704 causes the film 702 to assume a flat shape relative to the buildup layer. At the time of manufacture, aluminum also includes other reflective metals (silver, copper, nickel)' or is plated with a reflective material in a dielectric material or an inner layer of an organic material, disposed on a thin sacrificial layer, which may utilize wet etching or gas The phase removal technique was removed. The aluminum film 7〇2 half is mechanically fixed to the substrate by the support tab 716, which is straightened ^

1077A-4732A-PF 20 1318325 * / is accumulated on the optical buildup layer 704. Because of this, the light incident on the area of the tab and the stack is absorbed, so that this mechanically inactive area does not function optically. This example and other interferometric modulator designs. This technique eliminates scattered black masks. w The incident light 706 is not completely absorbed, or a portion of the frequency of light 708 is reflected according to the spacing of the deposited layers. This optical effect is an inductively absorbing interferometric modulator as disclosed in U.S. Patent Application Serial No. 8/688,71, filed on Jan. 31, s. The 7th figure shows the condition of the device when no voltage is applied. The residual stress in the film causes it to curl into a tight roll shape. The residual stress can be generated by depositing a thin layer of material 718 over the film, which has a relatively high residual force. An example of the use of chromium, in which the film thickness is reduced to hundreds of angstroms to obtain high stress. As the film no longer obscures its light path, the beam can be allowed to pass through the buildup layer 704 and through the plate 71. The flat plate 71 can exist in a state of not being highly absorbed or highly reflective (constant color or white light). Regarding the modulator used in the reflective display n, the optical buildup layer 7Q4 can be designed to reflect a predetermined color (if the plate 71 is absorbed) or absorbed (if the plate 710 is in a reflective state) when the device is activated. A type A start is shown in Fig. 8A, and another type of interferometric modulator structure is disclosed in U.S. Patent Application Serial No. 08/688, No. 71, the entire disclosure of which is incorporated herein by reference. The ground step and incorporated herein by reference, the electrode 8 〇 2, about 1 angstrom thickness of the film is formed on the substrate. Setting up

1077A-4732A-PF 21 1318325 Strut 808 and rotating joint 81. The shutter 8i2 and the reflective film 813 thereon are supported. The fulcrum shutter can be - (iv) film 'having a thickness of several thousand angstroms. Its χ-γ size is tens to hundreds of microns. The film can be interferometric and designed to reflect a given color. As for reference, July 31, 1996, the application for the US special account (4) G8 touch, m revealed, the induction absorption type of fixed interference stacking layer. It may also include a polymer immersed in a color dye, or inscription or silver to provide wide band reflection. The electrodes and the shutter 812 are designed such that applying a voltage between them (e.g., 10 volts) will cause the shutter 812 to partially or fully rotate the rotating hinge shaft. A shutter 818 is shown in a rotated state. Generally, for a known pixel, all of the shutters will be driven by signals located at the common bus bar electrodes 8〇4. This shutter will experience electromagnetic hysteresis, if the distance between the rotating hub and the electrode is designed such that the electrostatic attraction of the electrode exceeds the spring tension of the rotating hub during rotation. The shutter will therefore have two motor steady states. In the operation of the penetrating mode, the shutter does not block the incident light or allows it to pass through at 3 o'clock. Figure 8A illustrates a reflection mode in which incident light 822 is reflected back to viewer 820. In one state of this mode, if the shutter is made of metal, the shutter will reflect white light, or if the shutter is coated with an interference film or dye, the shutter will reflect a given color or a set of colors. The thickness of the description of the interference stack and the resulting color are also disclosed in U.S. Patent Application Serial No. 08/688, the entire disclosure of which is incorporated herein by reference. In another state, light is allowed to pass through and is absorbed by the substrate 8' if the opposite side of the shutter is plated with an absorbent film or film 722. The film may comprise another dye soaked organic film or designed to be absorbed

1077A-4732A-PF 22 1318325 Inductive absorption stack. Conversely, the shutter will be highly absorbed, i.e., appear black, and the substrate 800 is plated with a highly reflective film 824 or selectively coated with a dye film 干涉 interference film along the colored reflective film lines described above to reflect color. The operation of a ping can be further improved by the addition of the auxiliary electrode 814. 2 provides an additional torque to the shutter, and when charged to the "potential," an electrostatic attraction is induced between the auxiliary Δ814 and the shading 812. Auxiliary electrode 814 includes a combination of conductor 814 and breakout structure 816. The electrode comprises a transparent V body 'e.g. IT 〇 ' which is approximately several thousand angstroms thick. All of the structures and associated electrodes are mechanically fabricated from materials, which are on the surface of a single substrate, such as a single stone panel; and are therefore easily fabricated and readable and readable by good control electrode spacing distances. For example, if the surface change of both the device substrate and the counter substrate on the substrate 2 = (d), the substrate can be combined to produce a deviation of a majority of ^ ^ ^ r-. In this way, the need to influence the wide range of electricity can be changed by tens of volts. The structure of the monolith varies exactly with the surface of the substrate' and produces a slight change. The 8th figure shows the manufacturing process, steps for the rotary modulator! To 7. In step 1, the substrate 83G has the upper electrode 832 and the insulator 834. The general electrode and insulator materials are Ming and Dioxo, each of which is one thousand angstroms in thickness. These are in step 2 - the material - for example, several; ^ (four) u interval 836 system pattern; then in step 4, the shovel is smashed early "... hoarding and forming (10). This is about angstrom thickness (four) person; ^ 疋 turn frame group / shutter material, material 838 has been formed: slaughter two, or titanium / crane alloy. Patterned in step 5 to form bus bar electrodes 844, branches

1077A-4732A-PF 23 1318325 _ struts 840 and shutters 842. In step 6, the shading reflector 846 has been <> and patterned. In step 7 +, the sacrificial interval has been etched away to produce & the entire structure. Step 7 also reveals a top view of the structure showing in detail the pivotal hub including support post 848, torsion arm 85〇 and shutter 852. Switching element # About the interferometric modulator' is a two-bit device, π requires a small amount of voltage to drive the display. The drive electronics do not need to generate analog signals to achieve grayscale operation. Thus, the use of electronic components can be carried out using the apparatus proposed in U.S. Patent Application Serial No. 08/769,947, filed on Dec. 19, 1996, which is incorporated herein by reference. In addition, the drive electronics and logic functions can be implemented using MEMS switching elements. Figures 9 through 9 illustrate this concept. The ninth diagram is a basic switching ghost diagram/... with an input 9 〇 0 coupled to the output 904 by applying a control signal 9 〇 2 •. The first swollen map shows how a row of drives performs. A row driver for the addressing structure as described above needs to output three voltage values. Applying an appropriate control signal to the row driver allows an input voltage value selection to be provided to output 903. The input voltage is Vccn, Vc. ,. And Vhs, corresponding to 906, 908 and 910 in the figure. Similarly, with respect to the column drivers shown in Figure 9C, the appropriate control signals cause a selected one or other voltage value to be transmitted to output 92. This wheeling voltage is Vsein, Vs (1). And ground' corresponds to 914, 916 and 918 in the figure. Figure 9D illustrates how the logic device 932 is used. In this example, an MND gate utilizes a basic switch.

1077A-4732A-PF 24 1318325 Ghosts - 934 936, 938 and 940. All of the components can be configured in this manner: in conjunction with the manufacture of the display subsystem shown in the figure. This person is included in the control logic 926, the row driver 924, the column driver, and the array, and uses the addressing structure as described in FIG. The manufacture of this switching element, such as a microelectromechanical component, can utilize a single person to make the entire display system. This switching manufacturing step becomes the second step of the interferometric modulator manufacturing step' and is illustrated in Figure 。. A j-jumping 1 shows the top view and side view of the starting platform. Arrow 1 〇〇 4 Table 1. Direction. The substrate has been deposited with a sacrificial interval of 1002, 2000 angstrom thickness; and a pattern is formed on the surface thereof. In step 2, a semiconductor material having a thickness of several micrometers has been deposited and exposed to form a source cup 1010, a drain 1 008, and a gate structure 1〇〇6. A few hundred angstroms of non-erodable metal 'such as gold, tantalum or face can be shoveled on this structural material' to maintain low contact resistance during switching. At source 101. The inner etch forms a recess 1 〇 12' to assist in moving the source rod in a plane parallel to the substrate. Compare top view: With the front view, the perspective view shows the difference between steps 3 and 4. Arrow 1016 is not in the right direction. In step 3 the 'sacrificial material has been etched away, leaving the complete source rod 1010 and free to move. * When a voltage is applied between the source and gate structures, the source rod 1010 is deflected toward the gate 1. . 6 until 1 with the bungee. 8 contact, thus making electrical contact between the source and the drain. The startup mode is parallel to the substrate surface, thus allowing the fabrication steps to be applied to the main interferometric modulator fabrication steps. This method requires more steps than to make a switch that is activated perpendicular to the surface of the substrate. Figure 10B and Figure 1c illustrate additional aspects of a planar MEMS switch

1077A-4732A-PF 25 1318325 Two designs. The switch in the (10) diagram is different from the switch lever 〇 28 which is in contact with the drain 1024 and the source 1 026. In Figure (10) = Switching Μ ‘The flow of the source rod to the immersive current will affect the switching threshold and complicate the circuit design. This does not have an example of switch 1 020. In the picture of Yu Di 1 〇 C, the switch is crying and digging two g knives to change the way and to improve the other. In this example, the insulator 1 040 will switch the lever 1 〇 42 to the total! Λ0n ^ 〇 W Xing contact rod 1038 is electrically insulated. The insulator can be S i 〇 2, which can be formed by depositing and exposing a known technique using pi. In the circuit including the switch, the switch uses the switch to eliminate the need to electrically insulate the logic h遽 from the switching drive voltage. Keko Ray Knot _ In general, the special energy of the interferometric modulator, And it can be moved by itself, or by its own snow iu - there is a pre-skilled X" electronic, mechanical or well-moving device. #飞光予装置 Related to the generation of interference film stacks of the day of the day. ^ ^ ^ ^ waist group is the sub-hierarchy of the early stone structure, which is the Tian Xi ❺ photoelectric structure. In summary, the definition of the structure of the geometry of the i cover; 5 Gan 4 ΒΒ photoelectric,,, mouth structure ' due to the preparation of 仏. The structure and its related changes can be changed... The structure can be compared with the light along a 'Ding Ding. This 丨口2 acts in the direction of the axis. Like the photoelectric band gap structure (P eve, , -. also k 136 or photoelectric crystal. Jnh „ n J〇annopoulos et al. John J). J Photonic Crystal periodic photoelectric structure. Qstals illustrates one-dimensional PBG It can be seen in Fig. 16 to show a dielectric method, 璺, type, etc. For example, the method of manufacturing the first-Pylo filter type. Film ϊβ1/(^-type interferometric modulator and seek stacking 1614 and 1618 Interval layer

1077A-4732A-PF 26 1318325 «The oxidized stone layers are each four so as to form a long thick layer with a center made on the substrate, and the stacked sun is continuous with the fork...in the modulator structure. Generally, there are periodic optical two-direction changes in the two directions: a refractive index change of the material, alternating high and low refractive index layers. Two: Yes:: When they are spaced apart along a single-axis, for example, / can be considered as one-dimensional, because the pair is the largest. The light wave traveling in the Z-axis direction, "Sexual effect system" Figure 11A and Figure j 1B Figure ^ In Figure 11A, the micro-ring is a total of (four) ... electricity, 4 type. Many known (four)" D can be used with known techniques for wavelengths of ! 55 micro": oxidized and oxydiminated alloys. The general size of J丄·心儆木靶围改良 is... It is essentially round, leather 1^ (for example, glass, there are still many choices ^ structural refractive index and size " and... travel can be used as frequency Select the 3 " class of resonators, if the design is correct, in this example, this pass = line = spread the broadband transmission into the human. In the plane of the plane. This device; as shown in the symbol 1101 Fabriavi analogs will be constructed using a single-mirror layer. Because of the single boundary layer (mirror layer), there is no stagnation to maintain a one-step optical optoelectronic structure. However, 'can be regarded as broadband The utility of the utility in Figure 11B shows no more traditional directions, arrays 歹 " 106 presentation - tune, ... in the X direction and the Y square map marked by the symbol u 〇 3 within the range of two changes This medium

The electromagnetic propagation system of 1077A-4732A-PF 27 1318325 is most significantly affected. *Because of the natural nature of its period, the array of the ιΐβ map is common with the properties of the one-dimensional film-stacked layer, the same as the properties of the layer used, except for its higher-order dimensions, along with the engraving from Gan & + Faces over some coordinate axes of the array. This array rate is used for cylindrical materials, Hui 4, and the change between the refractive material and the surrounding materials, and the surrounding material. The use of the same principle applied to the film 埵 # 斗 4 4 4 4 为 工 工 工 工 工 工 工 工 工 工 工 工 § § § § § § § § § § § § § § § § § § § § § 工 工 工 § Optical resonator, (mirror surface, wave U wave thief, edge chopper), acting on the surface of the transmission: = Array 11G6 shown in the example of Figure 11 includes a cylindrical one-circle: two, which is different from the size and/or refractive index. For example, the diameter of the cylinder is slightly larger or smaller than other cylinders (for example, the difference in diameter by a quarter-wavelength), or the difference is the material (for example, the entire size of the air array by 弁学备M, _ emulsified stone eve) Determined by the size of the scorpion or the size of the piece, the basin must be handled skillfully. According to its required characteristics, this defect can also be listed in one or more columns. This structure is similar to the dielectric Fabry-Perot wave effect of Figure 6i, but acts only in the two-dimensional range. In this example, the defect is similar to the aperture 1616. The remaining cylinders are similar to adjacent two-dimensional stacks. The relevant dimensions of the structure of Fig. 11B are represented by the column spacing sx, the column y spacing sy (both can be regarded as a crystal lattice), the cylinder diameter d, and the array height h. Similar to a quarter-wavelength stack, the dimension, the diameter of the cylinder, and the spacing are four-wavelength. The height h is determined by the need for a travel mode and is more than half a wavelength for a single mode travel. About the size of the structure acting on the light, "known as mlQhnD.. Qing - et al.

In the textbook Photonic Crystals,, in. 1077A-4732A-PF 28 1318325 :: The structure is also fabricated using the same materials and techniques used to fabricate the resonator (10). For example, a single early/special film of tantalum can be deposited on a glass substrate and patterned using conventional techniques, followed by the use of reactive ion etching to produce a cylinder of apparent proportion. For example, / leather length is 1. 5 5 /z m, and the diameter and spacing of the cylinder are 〇·5# m and 〇.丨# m, respectively. The optoelectronic structure can also be guided to propagate under a limited geometry. Therefore, it is quite useful in terms of application, and when the size is constrained to be quite strict, it is possible to guide and/or select a predetermined optical frequency or optical band. It is also possible to fabricate a waveguide whose propagation precedes the travel in the π plane to force the light to turn at a 9 degree turn in a space smaller than the wavelength of the light. This can be done by creating a linear row of cylindrical defects that can be used as a waveguide. The two-dimensional structure is illustrated in Fig. 12. The three-dimensional periodic structure (2) 2 acts on the propagation of travel in the XY, YZ & XZ planes. Various optical responses can be obtained by appropriate structural design and selection of constituent materials. Apply these same settings. The ten rule 'however' applies three-dimensionality here. Defects occur in point, line or area form with respect to points and lines, which differ from the peripheral dimension by size and/or refractive index. In Fig. 12, the 'defective 12〇4 series_single-point element, but may be a combination of a line type or a line and a point element or a region. For example, a 'line type' 婉蜒, an array of defect points can be fabricated, which is based on any three: I pass PBG and act as a tightly bound waveguide for transmitting light therein. Defects are generally located therein, but are shown on the surface for illustrative purposes. The relevant dimensions of this structure are illustrated in the drawings. The diameter, spacing and material of the PBG are completely relevant, however the above design rules can also be utilized. Making three-dimensional PBGs is more complicated. About Manufacturing - Dimensional or 2D Features 1077A-4732A-PF 29 1318325

Conventional devices, if applied in three dimensions, will incorporate more deposition, embroidering, and etching cycles to achieve a three-dimensional structure. Manufacturing techniques for fabricating periodic two-dimensional structures include: holographic development in which a photo-sensitive material is exposed to a standard wave and the material (four) is superimposed into a pattern of refractive index changes; self-organizing organic materials or self-bonding materials According to its inherent adhesion and the directional characteristics of some heterogeneous molecular polymeric materials, a cylindrical array or a spherical structure is produced during the deposition of the material; a ceramic method can be added to provide a spherical structure to control the size into a liquid suspension... but solidify, organize this The structure can be: removed by dissolution or enthalpy; a combination of the above methods, and the like. Heterogeneous molecular polymerization techniques and self-binding techniques are of particular interest because both are low temperature and require little or no exposure development. As a general rule, this technique involves the dissolution of a polymer such as polyphenyl quinine block polystyrene (PPQmPSn) dissolved in: carbon sulfide. The solution is applied to the substrate and the resulting mixture is volatilized to produce a tight hexagonal arrangement in which the gas fills the polymer sphere. This technique can be repeated multiple times to produce a number of layers; the period of the array can be controlled by applying the number of repeating units of the high molecular units On and η). The use of a micron size, including a metal or an oxide semiconductor, has the effect of reducing the array period, and further increases the refractive index of the polymer. Defects are generated by directly applying materials to sub-micron-scale focused ion beams or atomic force microscopes. Previously available for very small selections, removing or adding materials; # to change the optical properties of the material. Material removal results from the ejection of material from the particle beam with energy ', for example, using a focused ion beam tool' Material addition occurs when the focused ion beam penetrates - a volatile, gas-containing metal, such as six gas enthalpy

1077A-4732A-PF 30 1318325 (Heavy conductor) or PTFE (insulated carbon dioxide eve). The gas slows down and the composition deposits at the ion beam contacting the substrate. Another method involves the use of a technique called microelectrode deposition, and the basin has been described in detail in U.S. Patent No. 5,641,391. In this method, a single microscopic electrode is used to shame the submicron of various materials and substrates. The two-dimensional feature. Metals deposited by this method, defects: oxidation, to form dielectric defects surrounded by m-arrays, are fabricated using the techniques described above. There are special features on the surface, 7 g - in the form of other material patterns, such as the PBG array made by the pastry; during the formation of the defect, the pBG paradigm produces defects in the template. This is especially relevant for PBG methods for base ==, mainly self-combining methods. According to the method, this method can promote or inhibit the growth of the PBG from the local area surrounded by the crystal. In this method, a pattern of defects, seed crystals can be fabricated; then PBG is formed in the formation. During the 纟PBG, the type of device that is known to be an interfering modulator in the class of defect generation becomes more by adding more species to the modulator itself. Any static device near the light can become dynamic by changing its geometry and/or changing the structure in its vicinity. The device (made in Figure 16)'s scoop: Fabry-Pylowave's electro-mirror surface, each --dimensional photoelectric, 'D-structure, can be adjusted by electrostatically changing the hole width . The 苐13 image shows an example of adding a two-dimensional smear. In the two A diagrams of the modulator design in Fig. 13A, a partially cut pattern reveals a self-support

1077A-4732A-PF 31 1318325 ° film 1 304, which is fabricated and fixed on the side facing the substrate, and has a micro-ring resonator 1306. The waveguides 1301 1 302 lying across the interior of the substrate 1303 are flat and parallel and can be fabricated using known techniques. In the 1 Ο Λ .. t fish diagram, the interferometric modulator shows an undriven state with a limited air gap between the microring and the substrate. The microring is fabricated so that its position overlaps and aligns with the pair of waveguides. The size of the microring is the same as the above example. Figure 1 305 shows the dimensions of the waveguide, which is w = 1 " m, h = 〇 · melon • and ^lGGnm. In the undriven state, light 13()8 is undistributed within '1 302, and the output beam 131〇 has the same spectrum as incident beam 1 308. The interferometric modulator is driven to force the micro-rings to closely contact the substrate and the waveguide to alter the optical properties of the device. The travel in the waveguide i3Q2 can be made by the evanescent phenomenon _ human micro-ring. This micro-ring, if properly sized, acts as an optical resonator' to couple the selected frequency out of the waveguide 1302 and into the waveguide 1301. This is shown in Figure 13B, where beam 1312 shows the line in the opposite direction to beam 1308. Such devices can be used as a frequency switch; special wavelengths can be selected from the waveguide by applying a voltage, or other drive device that requires the structure to be in intimate contact with the lying waveguide. The electrostatic description of this geometry has been described in the paper by B. E. Little et al., Vertically c〇upled

Resonator Channel Dropping Filter^ , iEEE Photonics Technology Letters, vol, n, n〇. 2,1 999. Another example is illustrated in Figure 13C. In this example, a pair of waveguides 1 332 and Cong and resonators 1314 are fabricated in a cylindrical shape on a substrate. PBG is the same cylindrical array, by removing two rows (one for each waveguide)

1077A-4732A-PF 32 1318325 A waveguide, and the resonator is defined by removing two columns. The upper fine waveguide 1330 is more detailed with the 332 and η ΐ 4 + α 口 , , and the structure of the vibration state 1 314 . The size is related to the desired wavelength and the materials used. For the 155^ wavelength, the diameter and spacing of the circle are 〇.5"...heart height to determine the travel mode, which will be supported and slightly larger than half a wavelength, if only unicast. Two separate cylinders are fabricated on the inner surface of the film 1315, which face downward; and, like the cylinders on the substrate, have the same dimensions and the same material (or optical properties are the same). The resonator and the cylinder are designed to match each other; in the resonator, a cylinder is formed correspondingly, and a cylinder is suitably disposed on the diaphragm. When the interferometric modulator is in an undriven state, with a finite vertical, the air gap 1 312 ' is at least a few hundred nanometers between the pBG and the film cylinder' and thus no optical interaction occurs. The cylinder appearing in the resonator acts as a defect, creating a trade-off between the waveguides 133G and 1332. In this state the device acts as shown in Figure 13B, and: the light selection frequency at which the waveguide travels is now injected into the waveguide 1 332 and the opposite direction of the disk light 1 329 travels. The drive interferometer is in contact with the PBG, however, the cylinder is properly placed in the vibrator to change its characteristics. The defect of the resonator is eliminated by arranging the thin film cylinder. Using the light i 328 that does not interfere during travel, in this state The device is shown in Figure 13A. The static description of this geometry has been published in H_A. Haus's paper nnel drop filters in photonic crystals^ , Optics

1077A-4732A-PF 33 1318325

Express, vol. no. 1, 1998. First learn the switch: In Figure 14A, the device according to the inductive absorber comprises a (four) film just, the position is purely ten to several hundred (four) squares, and the material is deposited on the layer 1402. The material stack includes metal and oxide. People ^ 2 = 2 forms a predetermined pattern on the bottom. Inductive Absorption Modulators: The films used are suitable for this purpose and have been disclosed in July 31, 1996, in the National Patent Application No. 8/688, 71 G, and are hereby incorporated by reference. The film on the soil floor also includes - a transparent conductor 'example> IT0. The structure may be followed by a metal film such as molybdenum or tungsten, a thickness of several hundred angstroms. ,: This material is used. Therefore, in the undriven state, the device reflects a specific wavelength range. When the film is driven in contact with it, it becomes extremely absorbed. Side view 1410 shows a view of one of the devices, viewed from the side of the substrate. Light beam 1408 propagates within the substrate at an arbitrary angle and is incident to exhibit an interferometric modulator 1 in an undriven state. Assuming that the frequency of the light coincides with the range of reflection of the interferometric modulator in the undriven state, the light is reflected at a complementary angle and away. Side view, 1414, shows the same interferometric modulator in the driven state. Because the device now absorbs light as much as possible, the light incident thereon is no longer reflected and is absorbed by the material of the interferometric modulator stack. Thus, in this configuration, interference can be fabricated that acts as an optical switcher for switching light traveling within the substrate. The substrate is machined to form a very smooth, very flat (i/丨〇 wavelength range of focused light)' and is several times longer (at least hundreds of microns) than the wavelength of light. This allows the base

1077A-4732A-PF 34 1318325 The bottom is used as a substrate/waveguide, and the beam travels in a certain direction, and parallel to the substrate, but from the surface to the other surface through multiple-undershoot; Light waves in this structure are often used as substrate guiding waves. The reverse Fig. 14B shows the change of the month of the invention. The film 1420 forming a predetermined pattern is no longer a rectangle but an end film.

^ Although the structure of the machine is strong, the I constant decreases along this length to reduce the area of the electrode. Therefore, the power of the tip of the object to apply static electricity is large and small. If the φ pressure is gradually known, the film will be driven first at the wider end. When the voltage is increased, the spleen, κ, arrow 1428 direction is activated. Winter/t3 For incident light, the interference continues to cry a eight-week system-absorption area operation, the intermediate area is determined according to the applied voltage value, and the middle ^ _ 槚 side view 1434 shows that when no electricity is applied, it propagates on the substrate. The first attack on the gentleman, the result of the electric beam. The corresponding reflective area 1429, i.e., the perspective view of the incident beam, shows that the |ν' 剌 state does not show the beam and the 重叠 domain overlap trace 1431. Because of the gamma gamma of the rabbit, since the entire region 1429 does not absorb, the beam 143 〇 is from the interferometric modulator 1428 and the 汉 Α Α , 0 汉 is in the form of the first beam 1432 . In the side view 1436, the value of the temporary Bf is applied, and the reflection 1 440 has been attenuated to a certain box to select ma, and the Han to the end of the "wang" because the reflected area 1437 is partially absorbed. Figure 1438 Fish U9〇# _ 兴1 429 shows the result of the complete action and the beam is completely reduced. Therefore, by using a tapered structure, a modulatable optical attenuator can be fabricated whose response is directly related to the applied voltage value. Another type of optical switch is described in Figure 15. The support structure is made of metal, which is a kind of aluminum with a thickness of several thousand angstroms. In this way, it is electrically connected with a mirror of 1 502. Mirror 1502 is present in a transparent optical mount

1077A-4732A-PF 35 1318325 .礞 1501, which is bonded to the support 1500. The mirror 15 〇 2 may comprise a single metal film or metal oxide and a semiconductor film. The stent is made of a material having a refractive index equal to or greater than the substrate. This can be a SiO 2 (same refractive index) or a high refractive index polymer with a variable refractive index. The brackets are manufactured to the specified dimensions, so the mirrors are supported at a 45 degree angle. With the yellow-like lithography technique, the fabrication of the stent can be accomplished according to a reticle that continuously changes its optical characteristics. On a particular surface, a three-dimensional shape can be formed in the photoresist by appropriate density of change and exposure using the reticle. This shape can be converted to other materials via reactive ion etching. The entire structure is suspended on conductor 15A, which has formed a predetermined pattern to provide a window 1505 on the underlying substrate 1 504 that does not block light. In other words, a piece of conductor 15〇3 has been removed by etching, so window 15 5 05 includes bare glass. This switching is similar to an interferometric modulator that can be activated to drive the entire structure into contact with the substrate/waveguide. Side view 1512 shows photon characteristics. The beam 151 is placed in the substrate and propagates at a 45 degree angle to the normal, preventing it from traveling beyond the boundary of the substrate. This is because the 45 degree angle is known as the critical angle, which allows for a small or no loss of reflection of the beam between the substrate and the external medium according to the Total Internal Reflection Theory (TIR). The TIR theory is based on the Snell theorem, but there is a basic need that the refractive index of the medium outside the substrate is less than the refractive index of the substrate. In side view 1512, the device shows that the switch 15〇6 is in an undriven state and that the beam 1510 travels in an unimpeded manner. When the switch is activated and in contact with the substrate, as shown in side view 1514, the beam path is changed. Since the stent has a refractive index greater than or equal to the substrate, the beam is no longer at the interface

1077A-4732A^PF 36 1318325 TIR occurs. The beam exits the substrate and enters the optical support where it is mirrored. A specularly reflected beam at 45 degrees is allowed to travel perpendicular to the plane of the substrate. As a result, light can penetrate the substrate interface because it no longer satisfies Ur; and can be captured by a fiber coupler 152, the fiber coupler has been placed on the opposite side of the substrate/waveguide. - A similar concept has been revealed in X. Zhou et al. in 998, SIDDigest, νο1. χχιχ's paper,

Panel Display Using Electromechanical Spatial Modulat (4). This particular device is designed for illuminating display applications. The mirror can also be incorporated with a reflective grating that can be engraved on the surface of the stent using conventional exposure techniques. However, this method shows wavelength dependence and loss due to multi-order diffraction, which is not the result of a film mirror. In addition, another structure can replace the mirror, like the basin property 盥 dry J /, attributes and links. This can be classified into refraction, reflection, and diffraction; and can include microlenses (penetration and reflection), concave or convex mirrors, diffractive optical elements, holographic optical elements, prisms, and any of the optical elements in its form, and can be utilized Microfabrication technology is produced. In the case of using another optical component, the optical type is independent. The optics imparted by the * and angle may be used as a light-combining switcher with changes in the micro-interferometer modulator. If correct, wide-band illumination or a specific frequency can be arbitrarily removed from the substrate/waveguide. Side view 1 526 shows a more complex improvement in which an additional fixed mirror, on the opposite side of the central angle 4 5#, is again "on the opposite side of the base with the decoupled switcher. This mirror and switching test Qi Wu Wu Yi does not ask, it can not be activated. By the two mirror angles of the structure, the light 1522 that has been separated from the base has been efficiently engaged by the switch 15G6, and can be used by the mirror

1077A-4732A-PF 37 1318325 面 The surface is measured and returned to the substrate. However, in the χ γ plane _ the mirror surface is fabricated by having different orientation directions; in the substrate/waveguide, the mirror W body can redirect the light to any new direction again. This combination of °, 扪, ,, ° configurations uses the reference as a directional switcher. S knowing that a re-coupled mirror can also be used to couple any light, allowing light to propagate into the substrate perpendicular to the surface. Figure 15 shows an array using a directional switch. The base 1535, the linear array 536 is an array of fiber optic adapters that enter the substrate at an angle perpendicular to the plane of the pupil. A repeating mirror array (not shown) is placed directly opposite the fiber optic coupler array to lightly fit into the substrate parallel to the beam. On the surface MM of the substrate, a directional switcher array is fabricated, wherein (10) is one of them. The switch is set up in a special way, so that the light that enters the substrate can be directed to any of the output fiber combiners 1 532. The device using this method can be used as an optical switcher that can switch any different input to any different output. Can be modulated and filtered evil > test No. 1 6 '' can be modulated by Fabry-Perot filter form scoop interference (four). In this example, the conductive-contact 塾(10) 2 is deposited and patterned along the interface mirrors 1 604 and 1 608 and the sacrificial layer 1 606. This includes the hair; #膜' has a thickness that is a multiple of a half wavelength. The mirror may comprise (iv) a stack of '% Ti〇2 (high refractive index) and _ (low refractive index), with a further π low refractive index' and wherein the layer may also be air. The insulating layer 161G' is deposited and patterned such that the second contact pad only contacts

1077A-4732A-PF 38 1318325 Mirror surface. The patterned mirror 16 1614' is determined by the size of the beam of the mirror 16's interaction of the support 1615. —= Size is mainly due to the level of the intersection. The sacrificial layer i 6 0 6 part is chemically engraved into tens to hundreds of micrometers to provide mechanical stability, which is about ten micrometers flat I. The top layer of the size of the branch and the bottom of the mirror chest are light _ . False reading surface 1608 1 602盥161...-hetery for conduction, then contact pad

The door can be opened (4) The voltage will cause the mirror island to leave. Therefore, the optical response of this structure can be turned on. The figure below shows the application of this modulatable filter. A substrate can be fabricated on the upper surface of the "17G4, mirror m mineral film 1712. A mirror 1717 has been fabricated on the lower surface of the substrate, = as formed - metal, like at least 10. thickness of gold. Fixed to the substrate On the upper surface is an optical superstructure 17〇6 having an inner surface having at least 95% reflectivity, for example by an additional reflective gold film, and supporting a slanted mirror surface 1710. In this device, the beam 17〇 2 Traveling within the substrate at an angle greater than the critical angle, the critical angle for the glass substrate and the air medium is 41 degrees. Therefore, the mirror 1716 needs to remain fixed within the substrate/waveguide range. This configuration provides light in terms of angle selection. The propagation of the beam is more flexible. The beam 1702 is incident on the Fabry-Pylo 1704, and when the remaining beam 1 709 is reflected, the light of a given frequency is passed through! 7〇8. The penetrating frequency is incident on the superstructure 1706. And reflected from it, and then reflected by the mirror surface 1716 onto the inclined mirror surface 177. The mirror surface 710 is appropriately tilted so that the light is directed toward the anti-reflection coating 171 at a vertical angle with respect to the substrate. 2, then pass

1077A-4732A-PF 39 1318325 and enter the external interface. use.彳正体和“; as a wavelength selective ferrite superstructure can be manufactured using many technologies. The basin micromachines form holes of precise depth, for example; the base = shi shi thick, large: micron. After the completion of the hole meal, the slanted mirror member is bonded to a certain numb and the whole group is planted on the substrate such as broken glass, and many of the lithography/glass reinforced techniques are used. . In this example, a second modulating eucalyptus U and a work-stricken road are used. In other words, in order to provide additional frequency selection, two separate frequencies are now available individually. A sensor (10) is also added and provides a high degree of functional integration. Adding the 17C chart shows the addition of the integrated circuit. The beam 175 〇 has been lightly plunged into the substrate 1 770 'and the incident modulatable filter is different from the mth and 17th spectrograms,": the recoupling mirror 1 756 made on the wave. The angle of the mirror is made by 遽The frequency selected by the wave stop 52 is directly coupled into the substrate at the angle of the beam at an angle of =. The remaining frequency contained in the beam 175 propagates until it illuminates the tilted re-converted mirror m〇, which is perpendicular to the traveling beam Π56. The surface is thus traced back to the original path and used by other devices that are optically connected. The beam 1 758 is incident on the iCi 764 that can detect and resolve the poor signal in this beam. This IC can be Fp-styled. A gallium-cutting device having an integrated circuit having the benefit of directly engaging light carrying data. For example, 'a high-frequency wide optical interconnection can be formed by ICS1 764 and 1 762 by a bidirectional optical path 1772 function.

1077A-4732A-PF 40 1318325. This is formed by a combination of mirror 1766 and re-coupling mirror 1768. The false right has elements such as vertical hole surface emitting lasers (vcsels) or light emitting diode LEDs that emit light by any-ICs. Light is detected by any optical sensing element and according to the characteristics of the element fabricated by the semiconductor technology used to fabricate the IC. Light incident on the ic can also modulate light incident on Ic by exposure to a substrate traveling beam that has been fabricated on the surface of the IC. Guided Photoacoustic Mixer Figures 18A and 18B illustrate a two-channel optical mixer with a TIR variation using a substrate/waveguide. Figure 18A shows a schematic diagram of the device. Lights containing multiple wavelengths have two specific wavelengths 18〇丨 and 18 03, broken and directed towards two independent variable attenuators “Μ. Then they are output to many possible channels 18〇7 or into Optical stop

Figure 18B reveals another structure. This input light is guided into the device by the fiber optic light coupler 18, anti-reflective coating 1 802, and coupled into the substrate using re-coupling = mirror 1 806. This re-coupling mirror directs the light incident modulatable filter 1808' to divide the frequency λ1 (light beam 1815) and is unselected: the rate is directed towards the second modulatable filter 18〇9, which divides the frequency by 2 (light beam 1817) The remaining frequency beam 1819 is further traveled. The path of the beam i 815 transmitted by the modulatable filter 808 is again reflected through the mirror 1810 through the anti-reflective coating to be guided and coupled to the substrate. Re-coupling mirror 181

The 1077A-4732A-PF 41 1318325 T faces the attenuator 1812 and continues along the path parallel to the beam 1817, continuing to be selected by the second modulatable filter 18〇9. The two beams are moved in position by the function of the beam position changer 1 816. The disc is like a mirror that again consumes the same result, except that the mirror is parallel to the surface of the substrate. Since the mirror is suspended above the surface of the substrate at a fixed distance, the position of the incident point on the interface opposite the substrate moves toward the right. The displacement is determined directly by the height of the position changer. Light beam 1819 containing unselected wavelengths is also moved by the function of position changer 1818. The result is that all three beams are equally divided, and when they are incident, they are switched to the 1 820 and 1824 arrays. These are optionally directed to direct the beam into one of the two light combinations g 1 828 or into the sensor/sink 1830. Optical combiners can be fabricated using a variety of techniques. The polymer film is exposed to form a cylindrical pattern. The top of the substrate is formed by a reactive ion (4). The absorber/sensor includes a semiconductor element mounted on the substrate to provide an output power measurement as a mixer. The optical superstructure 1829 supports the external optics and provides a hermetic package for the mixer. The combination of the planar interferometric modulator and the substrate waveguide provides an easy-to-manufacture, set-up, and external-to-external optical component that is present on the waveguide and/or superstructure and that can be used within the waveguide and The effect of light propagating between the waveguide and the superstructure. Since all the components are made in a planar manner, it can be quite economical due to mass production on a large area, and different parts can be (4) accurately compared. In addition, because all of the moving elements are activated in a direction perpendicular to the substrate, they are relatively simple to manufacture and drive compared to more elaborate non-planar mirrors and beams.

1077A-4732A-PF 42 1318325 Moving. The tongue-wound electronics 7L can be attached to either the superstructure or the substrate/waveguide to increase the power. Alternatively, the movable element can be fabricated as part of a superstructure, in particular a right-handed semiconductor, such as a stone or a stone. The printing manufacturing method is because it is a plane' and because many layers do not have the semi-V1 electronic characteristics requiring a special substrate, the interferometric modulator, like many microelectromechanical structures, can be used. The advantages of e-technology, like the printing industry. Such methods generally include a flexible and Μ $ + & and a continuous flat plate of paper or plastic. The reference screen printing 太人太,,土', generally includes a continuous roller of a base material, the base material is fed into the locust τ n , and the string one, each of which is selectively plated with a dye for continuous manufacture. Complete a color pattern image. This step is important because it can be manufactured at high speed. ▲Two-two diagram instrument used to illustrate - serial application to single-interference modulator system = structure: network:: This extension to create an array of interferometric modulators or other micro-electromechanical, township structure. Screen printing source j 9 bruises from the drum - on the block material, two, such as a transparent plastic roller. - Single-two: indicates that the area is included, for the sake of explanation, only the early device. The net carving is fortunate to the I mesh pattern. Alternatively, the embossing of the plastic plate is formed by embossing the embossed metal film on the surface. The metal tape of the pattern is fixed to the plate. Deformation of the plastic to form a concave pattern. The use of a sufficient lithographic embossing film using a known thin film: Figure 1 906 has been described. Money J uses a known 4 貘 deposition method, Example _ layer. The results include Oxide, metal, oxygen

1077A-4732A-PF 43 1318325 Film stacking of four layers of film 1910 modulator design. A h lqi9 v material is equivalent to the inductive absorption interference device 1 912 distribution, solidification of the ancestor # will be formed for these layers and for the photoresist exposure, in order to round the case. As long as a thin film etching is formed. Alternatively, the brake field ρ ά + in the garment 1914. In this example, the laser scanned over the entire material allows the pattern. Expected to be large:: The rate is enough to vaporize the required material. Adjust the frequency of the laser, so the right side of the material... does not have the right 4 Α 戈 戈 戈 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 The substrate is slightly heated. The horse is too fast, and in this 4th example, all the films use the phase. As shown in 1 91 8 , the application of the pattern and the system's pattern eclipse another kind of sinking station, so that the photoresist is toughened. The device 1920 g' °, set, its deposition will become the location of the interferometric modulation m > About this layer 1922 can use the L-layer of the button. It has extremely small stress and has a system of enthalpy. It does not use 0·β V. It uses various PVD and PECVD techniques to deposit H-knife. It uses the devices 1 924, 1926 and 1928 to form a pattern, etch and strip light ^ " . If this layer is seconds, off: this is set to ^ 钕 engraving agent, XeF2, and completed. The Society and T use the chaotic phase to form this interferometric modulator. The result is a self-supporting film structure wrist-shaped package. This complete device is # A mω ^ plate-shaped UL-shaped elastic sheet 1 933 is sealed on the base film device C-plate: it has been plated with t 1q, 7 溥 film, For example metal. The two sheets are bonded using a fixed #1 937 to complete the package component 1 940.

1077A-4732A-PF 1318325 Strength measurement Residual stress is one of the factors in the design and manufacture of microelectromechanical structures. In interference with other structures, where the structural members have been mechanically loosened during the manufacturing process, the residual stress determines the geometry of the member. This interferometric modulator, such as an interference element, is sensitive to changes in the final geometry of the movable member. The direct effect of the air gap that is reflected, or otherwise penetrated by the color cavity. As a result, varying this distance along the length of the void φ can result in unacceptable color variations. On the other hand, this property can be used to determine the residual stress of the structure itself and the degree of deformation of the component. The known deformation state of any material provides a measure of the residual stress in the material. Computer simulation programs and calculation rules can be determined using two-dimensional data on the deformation state. Thus an 'interferometric modulator' can provide a means for this estimation. Figures 20A and 2B show how an interferometric modulator can be applied to an example of this method. The interferometric modulations 2000 and 2002 are shown from the side and bottom (perspective base), respectively. They are in the form of double cantilever beams and single cantilever. In this example, the structural material does not have residual stress and the two members show no deformation. When the substrate is viewed from the bottom, the device exhibits a uniform color which is determined by the thickness of the spacer layer formed thereon. The interferometric modulators (10) 4 and 2006 show a stress gradient because they have a compressive force above them. As a result, the structural film showed deformation, and the bottom pattern showed a natural change in color caused by it. For example, 'If the color area 2Qi6 is green and the color area 2014 is blue, it is because it is close to the substrate. Conversely, when the color area 2018 (the display is located in the double cantilever beam) is red, this is because the distance is far from the base.

1077A-4732A-PF 45 1318325 The two-step modulator 2°°8 and 2010 show a state in which the stress gradient of higher tensile stress is shown above. The structural member is appropriately changed and the color region is changed. In this example, when the area is area 2020 is red.守妯仕:第2〇B圊' shows a system that can be used to quickly and accurately estimate the residual stress state of a deposited film. The wafer 2 〇 3 〇 package structure array includes a single cantilever 襟 = and cantilevered film of varying length and width. The structural film is selected from the group consisting of mechanical and residual stresses. Many materials are possible, but limited by the few reflective conditions, the interferometric modulator in this example is not used for display purposes. Good alternative materials may include materials in crystalline form (矽, :: manufacturing viewpoint is compatible, exhibiting some degree of reflection and its mechanical characteristics are characterized by a degree of precision. Manufacturing and releasing such a 'question' ^^ Therefore it works independently. If the material is not stressed, then: the structure will show no color change. However, this is not the case, so the color state or color image can be recorded by using the high-resolution camera 2.34, High-magnification images can be obtained via the optical system. This camera is connected to the computer system 2G36, which has hardware and can record and process image data. This hardware easily includes the easy-to-obtain: South-speed processing board' In order to perform numerical calculations at a high rate, the software can collect a large number of routines for collecting color information and calculating surface deformation. The core process uses the deformation data to determine the optimal combination of uniform stress and stress gradient across the thickness of the film, which can generate all The type of pattern used produces a large number of 'undoped, test wafers,

1077A-4732A-PF 46 1318325 It has a detailed record of the undeposited stress state and is conveniently stored for use. When it is necessary to determine the residual stress of the deposited film, a test wafer is selected and a film is deposited on top of it. The deposited film changes the geometry of the structure and its color image. Using software resident in the computer system, the two color images before and after the test wafer can be compared and the residual stress in the deposited film can be accurately estimated. It can also be designed to start the test structure after the deposition is completed. Observing its effect during the initiation of a newly deposited film provides more information about the state of the residual stress, as is the film's changing characteristics throughout the startup process. This technique can be used to determine film stress when depositing a film. The fittest ::: The deposition system creates a light path that allows the image system to be instantly viewed; the image changes. This forms an instant feedback system that can be used to refer to the test 3: This method controls the residual stress. Soft and hard can be different from the cycle of the cymbal, and when the film is grown, the device manipulator changes conditions. Regarding the measurement of residual Ku Lixin's 'other technologies, whether it is right or two stresses' the whole system is superior and complex dry, η has dependence on electromechanical start-up, or uses expensive and complicated interference money to measure the manufacturing structure. (4) Shape. Drive the electronics to the large array of devices. (4) For blessing. The latter is observed by the unconventional external optics and hardware that are limited by the displacement of the film. , sex, and the need for complex discontinuous films. Another feature of interest is non-homogenous. In this old cavity, the ruthenium film's structure _ < two 4 臈 can be several types of discontinuous films. The second is, and should be, a non-continuous thin enamel. Base 2!00

1077A-4732A-PF 47 1318325 can be - metal, dielectric or semiconductor with a poor profile engraved to its surface, the profile including the appearance of each structure and should have a height (1) 〇, which is a fraction of the wavelength of light It is engraved with yellow lithography and chemical surrogate techniques to obtain a height similar to that described by 2m (triangle), 21〇6 (circle ^), and 2108 (taper). The base of any individual height has a diameter which is also equivalent to the height level of the pattern. When each-wheel is slightly different, the second-having the same characteristic 'e.g., when a light beam traverses from the incident into the substrate', the refractive index gradually changes from the incident medium to the film substrate 21A. Compared with the bonding film of the multilayer film, this structure is regarded as a preferred anti-reflection coating: 'Because t is independent of the angle measurement. Therefore, for a larger angle of incidence, 〃, maintain a high degree of anti-reflection. Figure 21B illustrates a coating 212 that has been deposited on a substrate (4): '4 metal, dielectric or semiconductor. In this example, the early stages of thin formation 'are less than about 1 angstrom thick. During most of the sinking, the film undergoes a -stage crystallization process, forming regions of the material that are large until they are combined into a body and form a continuous phase at some point. Figure 2124 shows a top view of the film. The optical properties of the film at an earlier stage are not the same as those of the continuous film. For metals, the film is more prone to exhibit higher losses than the same continuous characteristics. , f 2! C diagram illustrates the third type of film without (4). In the middle, the phase (4) has been deposited on the substrate 2132 to a thicker household, which is considered to be continuous. Using the above-mentioned self-binding method (4), (4) slaughtering the material to form the first and second wavelengths (that is, the diameter is smaller than the wavelength). In this example, the polymer can be used as a mask to transfer the pattern to the bottom 1077A-4732A, pp 48 1318325 # 卜 material. Since the material is continuous but perforated, it is not the same as the earlier stage film of the 21β chart. Conversely, its optical properties are different from those of the unfilled film, and the straight-injected beam experiences less loss and shows the peak of the penetration according to the surface. In addition, the geometry of the hole, like the angle of incidence of the incident angle to the incident interface, manipulates the spectral properties of the transmitted light. 2(3) shows the top view of this film. Such thin media has been published in Tae JinKiffl's paper ''CO*- opt-al transmission through metals perforated with =TMe_h〇learraysW month. At the same time, it belongs to the structure, which is different from PBG^. All two kinds of discontinuous films can be applied to the interferometric modulator structure. This is considered to be applicable to the material of one or more of the static and/or movable parts of the structure in the AA system. * According to the three unique characteristics of the individual film:: the main combination . It can be used with a dry heart = two instead of a film of varying thickness. In a very simple example, these thin-film joints should be surface-conducting or optically interfering, resulting in a straight-through::: learning properties can be passed close to other films. This can be done by directly changing the thinness, guiding it, by changing the refractive index of the surrounding medium, and/or by taking advantage of this simpler " modulation of complex optical changes. Manufacture of t-easy (4), although the invention has been defined by the preferred embodiment, any skilled person is skilled in the art, but it is not used within the scope of God and can be used as The invention is improved and retouched, so the scope of protection of the present invention

1077A-4732A-PF 49 1318325 The date defined in the attached patent application shall prevail. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1A is a cross-sectional view of a display substrate having an anti-reflection coating and a combined-body auxiliary light; the first discloses another structure for auxiliary light; and FIG. 2 shows the micro-mechanical in detail. The manufacturing process of the arc lamp source; "Fig. 3 illustrates the driving structure of the bias center of the interferometric modulator array in the display; the fourth figure is a figure based on the 'base + face' concept to illustrate the color display The structure; the fourth picture reveals the bottom sound of a 糸# can be tongue station, the interrogation path sequence, the unified block diagram, which provides - color τ re-tooling display center product; Figure 4c shows the general purpose display center product; The application of the mind is shown in: the geometric pattern of the modulator, which is displayed in the unactivated state: the optical effect is reduced in the operation of the 峨; the (5) is accessed in the startup state; the 5C is a pattern, dry " Operation in the black and white state (10) Figure I:: Operation of the dry design state; '$ Many colors Figure 6A shows the pattern of the interferometric modulator, the same = less optical effect, but the support structure is hidden; Operating the same design office Activated state; display system with a first opening 7A in FIG instructions anisotropic stress member in - state; ... interferometric modulator display the same at two: in the system device; and the other · 'state

1077A-4732A-PF 50 1318325 Figure 8A illustrates the interferometric modulation crying benefit 'which is initiated by rotation; the first is to illustrate the manufacturing process of the rotary interferometric modulator design; the 9A is a microelectromechanical switch a ] off Block diagram; Figure 9B is based on the square drive of the MEMS switch. The 苐9C diagram is based on the micro-electromechanical ΜΛΜμ μ Λ '9D diagram according to the NAND gate block diagram of the MEMS switch; Figure 9 shows a block diagram of a display system with logic and drive &MEMS; Figure 10A is a diagram, a basin, a /, Jielu - MEMS switch structure, manufacturing and Operation; the first 〇Β, 1 〇C diagram $昍; Table 11 Α diagram is a diagram, the view _ r .. . ^ . , , the micro-handle based on the 2-β photoelectric structure, the 11th A pattern of periodic 9 n-phase 2-D photoelectric structures; Figure 12 is a diagram of a pattern, a dig-removal zone, and an unvehicle-3-D photoelectric structure; And about the structure of the interferometric modulator; 13B, : f in the unactivated state has a micro-motion state 1 UC diagram is dry = the same interferometric modulator is in the open modulator; H, the dry i4A diagram with periodic 2-D optoelectronic structure illustrates the interferometric modulator design, which is used; 14B shows the pre-switch - Various changes of X. °10, used as a 43⁄4 reducer; Field F optics 15A - the graphical switch of the interferometric modulator design or an optical decoupling test. The first, b is - light, , . Figure 15B shows how these interferometric modulations 3! θ are combined and used as ΝΧΝ optical switches; 巧 ~ Figure 16 shows the manufacturing process of copper in the completion, soil ^ ^ dry ^ modulator structure Figure 1 7 A illustrates how the fine-grained, soil-induced interferometric modulator structure can be applied to waves.

1〇77A-4732A-PF 1318325 Long selection switch 丨1 7B further explains how the wavelength selection TC k switch can be used for solid-state components; Figure 17C illustrates the bump connection, ω inverse, σ 7 Μ The first diagram is a schematic diagram of a two-channel equalizer/mixer; the 18th diagram illustrates how the equalizer 'mixer uses an interferometric modulator; the nineteenth diagram is a diagram' The manufacturing process of the continuous port hard, and the mesh foundation of the shell; the 2 0 A, 2 Β diagram illustrates how the interference modulation point & benefit structure is used for stress measurement; and 21A to 21C description. [Main component symbol description] 100~AR coating; 102~glass layer; 104~arc array; 106~glass substrate; 10 7 ~ interface; 108~interferometric modulator array 109~incident light; 11 0~light path; ~ reflector layer; 112 ~ substrate; 114 ~ interferometric modulator array; 116 ~ light source; 118 ~ light guide; 120 ~ collimator; 122 ~ light; 12 6 ~ film stack; 128 ~ observer; 2 0 0 ~ glass Layer; 201 ~ reflector bowl; 202 ~ sacrificial layer; 204 ~ reflector / complex metal layer y 205 ~ light; 206 ~ deposited electrode layer; 300 ~ hysteresis curve; 3 〇 2 ~ time chart; 1077A-4732A -PF 52 1318325 400~pixel; 404~green; 408~white; 412~execution controller; 418~portable electronic product; 422~memory; 426~handwriting input; 432~audio interface; 5 0 2~electrode Rod, 505~ optical cavity; 508~second mirror; 511~determined frequency light; 521~black state; 527~green peak; 6 0 6~interferometric modulator; 7 0 2~aluminum film; 70 6~incident light ; 71 0~ flat; 71 8~ thin material layer; 8 0 2~ electrode; 8 0 8 ~ support rod; 812 ~ support shutter; 816 ~ support structure; 820 ~ observer; 402 ~ red; 406 ~ blue; 410 ~ components; 414, 416 ~ drive electronic circuit 420 ~ core processor; ~ RF or IR interface; 430 ~ image input device; 5 0 0 ~ substrate; 504 ~ insulating film; 506 ~ film / mirror; 510 ~ transparent upper structure; 512 ~ observer; 525 ~ blue peak; Red peak; 608~ film/mirror; 7 0 4~ stacked layer; 708~ part of the frequency of light; 716~ support tab; 8 0 0~ substrate; 804~ common bus electrode; 81 0~ rotary hub; 4 ~ auxiliary electrode; 81 8 ~ shutter; 8 3 0 ~ base;

1077A-4732A-PF 1318325 832 '834,836~sacrificial compartment; 838~column/rotary hub/shader material;

840 ~ support column; 844 ~ bus bar electrode; 848 ~ branch column; 852 ~ shutter; 902 ~ control signal; 906 ~ input voltage veQll; 910 ~ input voltage Vbias; 916 ~ input voltage VselFQ; 920 ~ output ; 9 2 6 ~ control logic; 9 3 0 ~ display array; 842 ~ shutter; 846 ~ shading reflector; 8 5 0 ~ torque arm; 900 ~ input; 904 ~ output; 908 ~ input voltage Vw. ; 914 ~ input voltage yselF1; 918 ~ ground; 924 ~ row driver; 928 ~ column driver; 932 ~ logic device;

9 4 0 ~ basic switching block; 1002 ~ sacrificial interval 10 0 6 ~ gate junction. 101 0 ~ source pole 1016 ~ arrow; 934, 936, 938, 1〇〇〇 ~ base; 1 004 ~ arrow; 1 0 0 8 ~ no pole structure; 1012 ~ groove; 10 2 4 ~ drain; I 0 2 8 ~ switching rod; 10 4 0 ~ insulator; 1100 ~ substrate; 1102 ~ micro ring resonator; II 0 8~defect; 1026~source; 1 038~contact rod; 1042~switching rod; 1101, 1103~XYZ coordinates 11 0 6~ array; 1 200~ substrate;

1077A-4732A-PF 54 1318325 1202~3D periodic structure; 1 204~ defect; 1301~waveguide; 1 303~substrate; 1 3 0 5 ~ sectional view; 1 308~beam; 1311~column; 1314~resonator; 326, 1 328~ uninterfered light 1 329~ light; 1400~aluminum film; 1 406~interferometric modulator; 141 0 ~ side view; 1420~ film; 1429~reflection area; 1431~overlap trace; 14 3 4 ~ Side view; 1437~reflection area; 1440~reflected beam; 1501~transparent optical support; 1 503~conductor; 1 505~window; 1510~beam; 151 4~side view; 1 522~beam;

1 302 ~ waveguide; 13 〇 4 ~ film; 1 306 ~ micro ring resonator; 1310 ~ output beam; 1312 ~ limited vertical air gap; 1315 ~ film; j 1 330, 1 332 ~ waveguide; 1402 ~ material accumulation Layer; 1 408 ~ beam; 1414 ~ side view; 1428 ~ arrow; 1 430 ~ beam; 1 432 ~ beam; 1 436 ~ side view; 1438 ~ fully absorbed state; 1500 ~ support structure; 1 5 0 2 ~ mirror ; 1 504 ~ substrate; 1 5 0 6 ~ switcher; 151 2 ~ side view; 1 5 2 0 ~ fiber optic adapter; 1 526 ~ side view; 1077A-4732A-PF 55 1318325

1 528~recoupling mirror; 1531~directional switcher array 1 532~output fiber coupler; 1 5 3 5~substrate; 1 602~conductive contact pad; 1 6 0 6~ sacrificial layer; 1610~insulation layer; 1614 ~ film stacking; 1616 ~ center hole; 1 702 ~ beam; 1 706 ~ optical superstructure; 1 709 ~ beam; 1712 ~ anti-reflective coating; 1716 ~ mirror; 1 738 ~ sensor; 1 7 5 Q ~ beam; 1756~re-coupling mirror; 1 760~re-coupling mirror; 1764~ICs; 1 768~re-coupling mirror; 1 772~bidirectional light path; 1 8 01~ light; 1803~ light; 1806~ re-engaged mirror; 530~beam; 1 536~ linear array; 1 604~mirror; 1 608~mirror; 1612~second contact pad; 1615~support; 1618~film stack; 1 704~ modulatable filter; 1 708~ light; 1710~mirror; 1714~substrate; 1717~mirror; 1739~second modulatable filter 1 752~ modulatable filter; 1 758~beam; 1762~ICs; 1 76 6 ~mirror; 1 770~substrate; 1800~ Fiber optic adapter; 1 802 ~ anti-reflective coating; 1 805 ~ variable attenuator; 1 807~ Tao; 1077A-4732A-PF 56 1318325

1 808~ modulatable filter; 1810~mirror; 1812~attenuator; 1815~beam; 1817~beam; 1819~beam; 1 824~ solution hybrid switch; 1 829~ optical superstructure; 1 9 0 0~ Screen printing source; 1 906~ pattern; 1910~ film stacking; 1914~ device; 1918~ pattern; 1 922~ interferometric modulator structure 1 924~ device; 1 928~ device; 1 932~ self-supporting film structure 1 933~elastic sheet; 1 936~continuous roller; 20 00~interferometric modulator; 2004~interferometric modulator; 2008~interferometric modulator; 2014~color area; 2018~color area; 1 80 9~second modulatable filter 1811~re-phase|closed mirror; 1813~optical stop; 1816~beam position changer; 1818~position changer; 1820~decoupled switcher; 1 828~optical coupler; 1 830~sensor/ Absorber; 1 904~embossed pattern tool; 1908~ coater; 1912~ device; 1916~ device; 1 920~ device; layer; 1926~ device; 1 930~ device; , 1 934~ coating device; Component; 2002~ interferometric modulator; 20 06 ~ dry </ br> </ br> </ br> </ br> </ br> </ br> </ br> Substrate; 2104-, triangle; 2106~cylindrical; 2108-conical; 2110-height; 2120-, coating; 2122- substrate; 2124·...film; 2130-film; 2132- 'substrate; 2136~ film. 1077A- 4732A-PF 58

Claims (1)

Revised deadline: 98.9.9 131853⁄4139. . No. 9 Chinese _ Patent Scope Amendment 10, Patent Application Range: i. A method of manufacturing a microelectromechanical system device, comprising: a one-to-one: providing a flexible substrate; and the above flexible substrate Providing one or more layers of the film, wherein the film comprises: a first mirror surface for at least partially reflecting incident light; and a second mirror surface for at least partially reflecting incident light, wherein the first mirror surface is disposed on the Between the flexible substrate and the second mirror surface, and one of the first and second mirror surfaces is moved relative to the other mirror surface between a first position and a second position, the first position is different from the other - the mirrors are separated by a first distance and the second position is at a second distance from the other mirror surface. 2. The method of &lt;RTI ID=0.0&gt;&gt;&gt; 3. The method of manufacturing a microelectromechanical system device according to claim 2, wherein the flexible substrate comprises a continuous plate of plastic material. 4. The method of fabricating a MEMS device according to claim 2, wherein the flexible substrate comprises a continuous sheet of paper material. 5. The method of fabricating a microelectromechanical system device as claimed in claim 1, wherein the film comprises an oxide layer, a metal layer, and a sacrificial layer. 6_ as described in claim 1 A method of fabricating an electromechanical system device, wherein the first mirror surface allows a portion of incident light to pass therethrough and is opaque to the second mirror surface. . 1077A-4732A-PF3 59 1318325 (Fin year 1f 曰修(更)本本本 I Μ----- ..._________ The manufacturing method of the MEMS device as described in claim 1] The film on the flexible substrate comprises an oxide layer and the oxide layer is disposed between the first mirror surface and the second mirror surface. 8. The method for manufacturing a microelectromechanical system device according to claim 1 Furthermore, the MEMS device is packaged by bonding (b〇n (jing)-flexible plate to the above-mentioned liftable substrate.] 9. The MEMS device according to claim 8 The manufacturing method of the above-mentioned flexible flat plate comprises a continuous roller of a flexible material. The manufacturing method of the MEMS device according to claim 8 wherein the flexible flat plate is sealed by a seal. U. The method of manufacturing a MEMS device according to claim 10, wherein the sealing film is made of a metal. 12. The MEMS device of claim 1The manufacturing method, wherein the MEMS device is an interferometric modulator, the MEMS device of claim 1, wherein the second mirror surface allows a portion of the incident light to pass through, and the first mirror surface It is opaque. .14: A shame 81—system mounting “------------- a liftable substrate; and—a first mirror that at least partially reflects incident light; a second mirror surface at least partially for reflecting incident light, wherein the first mirror surface is disposed between the flexible substrate and the second mirror surface, and one of the first and second mirror surfaces is opposite to Another - mirror surface - 1077A-4732A-PF3 60 1318325 ;:: set ... between the second position moved 1 attack i face &face; 5 giant - first distance _, and the second position is the other mirror A second distance from the basin 5', as in the MEMS device described in claim 14, ', the micro-electromechanical system device is an interferometric modulator. 16 λ. Electromechanical system device, where upper, ^ mirror permitting The incident light passes through, and the amount of movement between the first and second positions at the second mirror surface is said to be used to adjust the light reflected by the mirror surface of the first, 筮 _ &amp; 17. The MEMS device of claim 14, wherein the flexible substrate is made of a plastic or paper material. 18. The MEMS as described in claim 14. The device further includes an oxide layer disposed between the first mirror surface and the second mirror surface. 19. The MEMS device of claim 14, further comprising a flexible flat panel, bonding To the above flexible substrate for encapsulation of the above MEMS device. 20. The MEMS device of claim i, wherein the W-type plate is a continuous roller of a flexible material. 21. The MEMS device of claim 19, wherein the flexible slab is covered by a sealing film, 22. The MEMS device of claim 21, wherein The sealing film is made of metal. 23) The MEMS device as described in claim 14 of the patent application '1077A-4732A-PF3 61 1318325 </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> wherein the first mirror surface allows partial incident light to pass through, and the second mirror surface The amount of movement between the first and second positions is used to adjust the interference caused by the light reflected by the first and second mirror surfaces. 1077A-4732A-PF3 62 1318325 4' VII. Designated representative map: (1) The designated case for this case! The St &amp; ._ 'table chart is: (1B). (1) The representative figure of the opening Du # t % piece payment number simple description: 112 ~ base; 114 ~ dry v modulator array 116 ~ light source; uo ~ collimator; 1 2 6 ~ film stack 118 ~ light guide; 2 ~ light; 128 ~ observation. 8. If there is a chemical formula in this case, please reveal the chemical formula that best shows the characteristics of the invention. 1077A-4732A-PF 5