1341871 九、發明說明： 【發明所屬之技術領域】 之類 鑽鍵膜領域’尤其是關於-種具有高硬度及高附著性 【先前技術】 carbon)_具有優異之性質，主要表現在： 隸有良好之力學性質，硬度高，耐磨性好且摩擦係數低，良好之湖 >...、性和較好5驗喊層性質，韻紐好，導紐紐化學财性算。 因此類鑽;5雜可顧於乡種領域，如可於刀具表面醜鑽謂膜以提 刀爾性’從崎長刀具之壽命，❹卜_石賴還可應用於 ^之机表面喊離類，可有效改善壯之爾性及㈣性，大大提 尚Μ仁之脫模性能，並能延長模仁之使用壽命。 習知之類鑽石薄膜係通過濺鑛法鍵於底材上，減鍵源一般分為含碳氣 ，石墨兩類。當採用含碳氣體作為賤鍍源時，產生之類鐵石薄膜中含有 大量之氫雜質成份，造成類錯石膜中之SP3鍵結合之碳原子成份偏少，故通 過此方法製得之類鑽;5薄膜—般硬度較低，與鑽^性質相差較遠^當採用 石墨為靶材進行濺鍍製得類鑽石薄膜時，由於石墨與鑽石中碳原子之结合 不同，石墨中碳原子以SP2鍵結合，所以採用石墨作靶材獲得之類鑽石 薄膜中含有較乡以肥鍵結合之獅子，導致麟之騎^薄舰度較差， 且與底材之附著度亦較差。 有鑑於此’提供一種具有高硬度、高附著性之類鑽石薄膜之製造方法 貫為必要。 【發明内容】 本發明之目的在於提供具有高硬度、高附著性之類鑽石薄膜之製造方 為了實現本發明的目的，本發明提供一種類鑽石薄膜之製造方法，包 括以下步驟： 提供一底材； 將該底材清洗後玫入真空腔内； 將真空腔抽真空’然後通入氬氣，對底材進行電漿清洗； 以欽為乾•材，於底材表面鍍一鈦金屬層； 1341871 向真空腔内通入氬氣與氮氣，以鈦為靶材，於鈦金屬層表面鍍—氮化 鈦層； 以石墨與鈦為靶材，於氮化鈦層鍍一含鈦之類鑌石薄膜，其中濺鍍開 始時於靶材上施加較小偏壓，然後濺鍍過程中逐漸提高濺鍍靶材之偏壓。 相較習知技術，本發明之類鑽石薄膜之製造方法，鍍類鑽石薄膜前於 底材表面鍍鈦金屬層及IU匕鈦層，鈦金屬層增加了鍍膜與底材間之附著 性，氮化鈦層可作為擴散阻礙層，用來防止活性原子與稍後濺鍍之類鑽石 薄膜產生反應，濺鍍含鈦之類鑽石薄膜可提高類鑽石薄膜與底材之附著性 及抗磨耗性，濺鍍開始時於靶材上施加較小偏壓可使膜層具有較佳之附著 力’逐漸提高乾材偏壓可使外層鍵膜因為偏壓較高而具有高硬度。 【實施方式】1341871 IX. Description of the invention: [Technical field of the invention] The field of drill-bonding membranes, in particular, has high hardness and high adhesion [previously] carbon) has excellent properties, mainly in: Good mechanical properties, high hardness, good wear resistance and low friction coefficient, good lake >..., sex and better 5, the quality of the layer is good, the rhyme is good, and the new chemistry is calculated. Therefore, it is a kind of drill; 5 miscellaneous can be used in the field of rural areas, such as the surface of the tool can be ugly, the film is used to improve the life of the knife, and the life of the knife can be applied to the surface of the machine. The class can effectively improve the Zhuang's character and (4) nature, greatly improve the release properties of the barley, and prolong the service life of the mold. The diamond film of the prior art is bonded to the substrate by a splashing method, and the key source is generally classified into two types: carbon-containing gas and graphite. When a carbon-containing gas is used as the ruthenium plating source, a large amount of hydrogen impurity is contained in the iron film, and the carbon atom component of the SP3 bond in the stagger-like film is less, so that the diamond is obtained by this method. 5 film is generally low in hardness and far from the nature of the drill ^ When using graphite as a target for sputtering to produce a diamond-like film, the carbon atoms in the graphite are SP2 due to the combination of carbon atoms in the graphite and the diamond. The combination of the keys, so the use of graphite as a target to obtain a diamond film containing a lion that is more than the combination of the town and the fat, resulting in the Lin Qi riding thin ship, and the adhesion to the substrate is also poor. In view of the above, it is necessary to provide a method for producing a diamond film having high hardness and high adhesion. SUMMARY OF THE INVENTION An object of the present invention is to provide a diamond film having high hardness and high adhesion. In order to achieve the object of the present invention, the present invention provides a method for producing a diamond-like film, comprising the steps of: providing a substrate After the substrate is cleaned, it is polished into a vacuum chamber; the vacuum chamber is evacuated and then argon gas is introduced to clean the substrate; and a titanium metal layer is plated on the surface of the substrate; 1341871 argon and nitrogen are introduced into the vacuum chamber, titanium is used as a target, and the surface of the titanium metal layer is plated with a titanium nitride layer; graphite and titanium are used as targets, and a titanium-containing layer is plated on the titanium nitride layer. A stone film in which a small bias is applied to the target at the beginning of the sputtering, and then the bias of the sputtering target is gradually increased during the sputtering process. Compared with the prior art, the diamond film of the present invention is manufactured by coating a diamond-like film on the surface of the substrate with a titanium metal layer and an IU-titanium layer. The titanium layer increases the adhesion between the coating and the substrate. The titanium layer can be used as a diffusion barrier layer to prevent the active atoms from reacting with a diamond film which is later sputtered. Sputtering a diamond film containing titanium can improve the adhesion and abrasion resistance of the diamond-like film to the substrate. Applying a small bias on the target at the beginning of the sputtering results in a better adhesion of the film. A gradual increase in the dry material bias allows the outer bond film to have a high hardness due to the higher bias voltage. [Embodiment]
請參照第一圖所禾，該方法可通過下面之步驟具體實施。 首先提供一待鍍底材10，該底材10之材料可為不銹鋼、碳化鎢等，將 該底材作基本清洗後’玫入丙鲷溶液中以超聲波震盪清洗，持續時間約20 分鐘，然後將其故入乙醇溶液中以超聲波震盪清洗，持續時間約為10分鐘。 藉由氮氣搶將底材10喷乾後’將其放入磁控濺鍵機之腔體内，然後柚 真空至10-6托(torr)以下，向腔體内通入氬氣(Ar)至壓力達到2~7xl0-3托， 以300V之偏壓利用電漿清洗底材表面，持續時間應為10分鐘以上。 通入氬氣使磁控濺鍍腔體内壓力達到2〜7x10-3托，然後以鈦金屬為靶 材，於底材10表面濺鍍一層鈦金屬層12，濺鍍之偏壓範圍為-20V至-60V , 該鈦金屬層12之厚度為0.05〜0.1微米（//m)。Please refer to the first figure, the method can be implemented by the following steps. Firstly, a substrate 10 to be plated is provided. The material of the substrate 10 can be stainless steel, tungsten carbide, etc., after the substrate is basically cleaned, the sample is washed into a propionate solution by ultrasonic vibration for about 20 minutes, and then the time is about 20 minutes. It was washed into an ethanol solution and ultrasonically shaken for about 10 minutes. After the substrate 10 is sprayed dry by nitrogen gas, it is placed in the cavity of the magnetron splashing machine, and then the pomelo is vacuumed to below 10-6 torr, and argon gas (Ar) is introduced into the cavity. The pressure reaches 2~7xl0-3 Torr, and the surface of the substrate is cleaned with plasma at a bias of 300V for a duration of more than 10 minutes. The pressure inside the magnetron sputtering chamber is 2~7x10-3 Torr by argon gas, and then a titanium metal layer 12 is sputtered on the surface of the substrate 10 with titanium metal as the target, and the bias range of the sputtering is - The titanium metal layer 12 has a thickness of 0.05 to 0.1 μm (//m) from 20V to -60V.
向磁控濺鍍腔體内通入氬氣與氮氣(N2)至壓力為2〜7x10-3托，然後以 鈦金屬為靶材，於鈦金屬層12上濺鍍一層氮化鈦(TiN)層13，濺鍍之偏壓 範圍為-20V至-60V，該氬化鈦層13之厚度為0.05〜0.1微米。 向磁控濺鍍腔體内通入氬氣至壓力為2〜7x10-3托，然後以石墨和鈦金 屬為靶材，於氮化鈦層13表面濺鍍一層含鈦之類鑽石薄膜14，該類鑽石薄 膜14之厚度為0.5〜2微米，濺鍍速度為1 # m/h，初使濺鍍偏壓為-20V，每 隔5分鐘將濺鍍偏壓調高5V，即濺鍍5分鐘後，將偏壓調為-25V，10分鐘 後將偏壓調為-30V，依次類推直至鍍膜完成》 以上之電漿清洗、鍍鈦金屬層12、鍍氮化鈦層13後均需要將磁控濺鍍 腔體内之壓力抽至10-6托以下。 鍍類鑽石薄膜14前於底材10表面鍍鈦金屬層12及氮化鈦層13,鈦金 6 1341871 用i防止^ 與雜關之_生，氬化鈦層13可作為雜阻礙片， 石.等膜14可^；、稍後舰之類鑽石細【4產生反應，賤鍵含鈦之類錢 —材上$麟練1(3之附著性及抗雜性，賴開始時 偏壓可使膜層具有較佳之附著力，逐漸提高乾材偏壓可 使外層鍍膜因為偏壓較高而具有高硬度。 綜上所述，本發明符合發明專利要件，爰依法提出專利申請。惟，以 上所述者僅為本發明之較佳實施例，舉凡熟悉本案技藝之人士，在援依本 案發明精神所作之等效修飾或變化，皆應包含於以下之申請專利範圍内。 【圖式簡單說明】 第一圖係本發明類鑽石薄膜製造方法之濺鍍步驟示意圖。 【主要元件符號說明】 底材 10 鈦金屬層 12 I化鈦層 13 類鑽石薄膜 ηAn argon gas and a nitrogen gas (N2) are introduced into the magnetron sputtering chamber to a pressure of 2 to 7 x 10 -3 Torr, and then titanium nitride is used as a target to sputter a titanium nitride (TiN) on the titanium metal layer 12. The layer 13 has a bias voltage ranging from -20V to -60V, and the titanium arsenide layer 13 has a thickness of 0.05 to 0.1 micron. Argon gas is introduced into the magnetron sputtering chamber to a pressure of 2 to 7 x 10 -3 Torr, and then a graphite film of titanium such as titanium is sputtered on the surface of the titanium nitride layer 13 with graphite and titanium as targets. The diamond film 14 has a thickness of 0.5 to 2 micrometers and a sputtering rate of 1 #m/h. The sputtering bias is initially -20V, and the sputtering bias is increased by 5V every 5 minutes, that is, sputtering 5 After a minute, adjust the bias voltage to -25V, adjust the bias voltage to -30V after 10 minutes, and so on until the coating is completed. The above plasma cleaning, titanium metallization layer 12, titanium nitride layer 13 need to be The pressure in the magnetron sputtering chamber is pumped to below 10-6 Torr. The plated diamond-like film 14 is coated with a titanium metal layer 12 and a titanium nitride layer 13 on the surface of the substrate 10, and the titanium 6 1341871 is used to prevent the titanium oxide layer 13 from being used as a hetero barrier film. The film 14 can be used; later, the diamonds such as the ship are fine [4 reacts, the 贱 bond contains titanium and the like - the material is on the Lin Lian 1 (3 adhesion and anti-hybrid, at the beginning of the bias can be The film layer has better adhesion, and the dry material bias is gradually increased to make the outer coating film have high hardness due to high bias voltage. In summary, the invention complies with the invention patent requirements, and patent application is filed according to law. The present invention is only a preferred embodiment of the present invention, and equivalent modifications or variations made by those skilled in the art of the present invention should be included in the following claims. The first figure is a schematic diagram of the sputtering step of the method for producing a diamond-like film of the present invention. [Description of main components] Substrate 10 Titanium layer 12 Titanium layer 13 Diamond film η