TWI341680B - Camera with mos or cmos sensor array - Google Patents

Camera with mos or cmos sensor array

Info

Publication number
TWI341680B
TWI341680B TW093104352A TW93104352A TWI341680B TW I341680 B TWI341680 B TW I341680B TW 093104352 A TW093104352 A TW 093104352A TW 93104352 A TW93104352 A TW 93104352A TW I341680 B TWI341680 B TW I341680B
Authority
TW
Taiwan
Prior art keywords
mos
camera
sensor array
cmos sensor
cmos
Prior art date
Application number
TW093104352A
Other languages
Chinese (zh)
Other versions
TW200423700A (en
Inventor
Tzu Chiang Hsieh
Calvin Chao
Original Assignee
Phocus Inc E
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/371,618 external-priority patent/US6730900B2/en
Application filed by Phocus Inc E filed Critical Phocus Inc E
Publication of TW200423700A publication Critical patent/TW200423700A/en
Application granted granted Critical
Publication of TWI341680B publication Critical patent/TWI341680B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14645—Colour imagers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
TW093104352A 2003-02-22 2004-02-20 Camera with mos or cmos sensor array TWI341680B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/371,618 US6730900B2 (en) 2002-02-05 2003-02-22 Camera with MOS or CMOS sensor array

Publications (2)

Publication Number Publication Date
TW200423700A TW200423700A (en) 2004-11-01
TWI341680B true TWI341680B (en) 2011-05-01

Family

ID=32926202

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093104352A TWI341680B (en) 2003-02-22 2004-02-20 Camera with mos or cmos sensor array

Country Status (2)

Country Link
TW (1) TWI341680B (en)
WO (1) WO2004077101A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100628238B1 (en) 2004-12-30 2006-09-26 동부일렉트로닉스 주식회사 CMOS image sensor and method for manufacturing the same
TWI453527B (en) * 2009-07-15 2014-09-21 Hon Hai Prec Ind Co Ltd Electronic device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5502488A (en) * 1991-05-07 1996-03-26 Olympus Optical Co., Ltd. Solid-state imaging device having a low impedance structure

Also Published As

Publication number Publication date
WO2004077101A2 (en) 2004-09-10
TW200423700A (en) 2004-11-01
WO2004077101A3 (en) 2005-05-06

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees