WO2004077101A3 - Camera with mos or cmos sensor array - Google Patents

Camera with mos or cmos sensor array Download PDF

Info

Publication number
WO2004077101A3
WO2004077101A3 PCT/US2004/004692 US2004004692W WO2004077101A3 WO 2004077101 A3 WO2004077101 A3 WO 2004077101A3 US 2004004692 W US2004004692 W US 2004004692W WO 2004077101 A3 WO2004077101 A3 WO 2004077101A3
Authority
WO
WIPO (PCT)
Prior art keywords
mos
pixel
cmos
array
charges
Prior art date
Application number
PCT/US2004/004692
Other languages
French (fr)
Other versions
WO2004077101A2 (en
Inventor
Tzu-Chian Hsieh
Calvin Chao
Original Assignee
Phocus Inc E
Tzu-Chian Hsieh
Calvin Chao
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/371,618 external-priority patent/US6730900B2/en
Application filed by Phocus Inc E, Tzu-Chian Hsieh, Calvin Chao filed Critical Phocus Inc E
Publication of WO2004077101A2 publication Critical patent/WO2004077101A2/en
Publication of WO2004077101A3 publication Critical patent/WO2004077101A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14645—Colour imagers

Abstract

A novel MOS or CMOS based active sensor array for producing electronic images from electron-hole producing light. Each pixel of the array (102) includes a layered photodiode (110,112,114) for converting the electron-hole producing light into electrical charges and MOS and/or CMOS pixel circuits (118) located under the layered photodiodes for collecting the charges. The present invention also provides additional MOS or CMOS circuits in and/or on the same crystalline substrate for converting the collected charges into images and manipulating image data. The layered photodiode of each pixel is fabricated as continuous layers of charge generating material on top of the MOS and/or CMOS pixel circuits so that extremely small pixels are possible with almost 100 percent packing factors. In a preferred embodiment the sensor is a 0.3 mega pixel (3.2 mm X 2.4 mm, 640 X 480) array of 5 micron square pixels which is compatible with a lens of 1/4.5 inch optical format. In a preferred embodiment the sensor along with focusing optics is incorporated into a cellular phone camera or a camera attachment the cellular phone to permit transmission of visual images along with the voice communication.
PCT/US2004/004692 2003-02-22 2004-02-19 Camera with mos or cmos sensor array WO2004077101A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/371,618 US6730900B2 (en) 2002-02-05 2003-02-22 Camera with MOS or CMOS sensor array
US10/371,618 2003-02-22

Publications (2)

Publication Number Publication Date
WO2004077101A2 WO2004077101A2 (en) 2004-09-10
WO2004077101A3 true WO2004077101A3 (en) 2005-05-06

Family

ID=32926202

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/004692 WO2004077101A2 (en) 2003-02-22 2004-02-19 Camera with mos or cmos sensor array

Country Status (2)

Country Link
TW (1) TWI341680B (en)
WO (1) WO2004077101A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100628238B1 (en) * 2004-12-30 2006-09-26 동부일렉트로닉스 주식회사 CMOS image sensor and method for manufacturing the same
TWI453527B (en) * 2009-07-15 2014-09-21 Hon Hai Prec Ind Co Ltd Electronic device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5502488A (en) * 1991-05-07 1996-03-26 Olympus Optical Co., Ltd. Solid-state imaging device having a low impedance structure

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5502488A (en) * 1991-05-07 1996-03-26 Olympus Optical Co., Ltd. Solid-state imaging device having a low impedance structure

Also Published As

Publication number Publication date
WO2004077101A2 (en) 2004-09-10
TW200423700A (en) 2004-11-01
TWI341680B (en) 2011-05-01

Similar Documents

Publication Publication Date Title
CN103855174B (en) Picture pick-up device and its driving method and camera device
TWI637497B (en) Camera element and camera unit
US8334494B2 (en) Large dynamic range cameras
CN106888358B (en) Solid-state imaging device, driving method of solid-state imaging device, and electronic apparatus
KR102530752B1 (en) Image sensor and electronic device including the image sensor, and method of image zoom processing
TWI459543B (en) Solid-state image capturing device and electronic device
TW200616215A (en) Solid-state imaging device, camera module and electronic equipment module
US9064983B2 (en) Solid-state imaging device and electronic equipment
US6730900B2 (en) Camera with MOS or CMOS sensor array
JP7018294B2 (en) Solid-state image sensor, solid-state image sensor driving method, and electronic equipment
Galstian Smart mini-cameras
KR102211899B1 (en) Solid-state imaging element, and imaging device
WO2015046045A1 (en) Imaging device and imaging method
JP5834386B2 (en) Optical sensor, lens module, and camera module
US8878969B2 (en) Imaging systems with color filter barriers
EP1557886A3 (en) Solid-state imaging device and camera
TW200633199A (en) Solid-state imaging device
EP1377039A3 (en) Compound eye image pickup apparatus and electronic apparatus equipped therewith
WO2015159727A1 (en) Focus detection device and electronic device
CN102227811A (en) Solid-state image pickup device and image pickup apparatus
EP1435662A3 (en) Solid state image pickup device with wide dynamic range
JP2016139988A (en) Solid-state image pickup device
CN108352395A (en) Solid-state imaging device and electronic equipment
JP2004208301A (en) Method for using image sensor, picture capturing system, and array
CN109951656A (en) A kind of imaging sensor and electronic equipment

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): BW GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
122 Ep: pct application non-entry in european phase