TWI340899B - Non-volatile memory and method for class-based update block replacement rules - Google Patents

Non-volatile memory and method for class-based update block replacement rules

Info

Publication number
TWI340899B
TWI340899B TW096134607A TW96134607A TWI340899B TW I340899 B TWI340899 B TW I340899B TW 096134607 A TW096134607 A TW 096134607A TW 96134607 A TW96134607 A TW 96134607A TW I340899 B TWI340899 B TW I340899B
Authority
TW
Taiwan
Prior art keywords
class
volatile memory
update block
block replacement
based update
Prior art date
Application number
TW096134607A
Other languages
English (en)
Chinese (zh)
Other versions
TW200837562A (en
Inventor
Jason T Lin
Original Assignee
Sandisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/532,456 external-priority patent/US7779056B2/en
Priority claimed from US11/532,467 external-priority patent/US7774392B2/en
Application filed by Sandisk Corp filed Critical Sandisk Corp
Publication of TW200837562A publication Critical patent/TW200837562A/zh
Application granted granted Critical
Publication of TWI340899B publication Critical patent/TWI340899B/zh

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72—Details relating to flash memory management
    • G06F2212/7202—Allocation control and policies

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Human Computer Interaction (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Read Only Memory (AREA)
  • Information Retrieval, Db Structures And Fs Structures Therefor (AREA)
TW096134607A 2006-09-15 2007-09-14 Non-volatile memory and method for class-based update block replacement rules TWI340899B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/532,456 US7779056B2 (en) 2006-09-15 2006-09-15 Managing a pool of update memory blocks based on each block's activity and data order
US11/532,467 US7774392B2 (en) 2006-09-15 2006-09-15 Non-volatile memory with management of a pool of update memory blocks based on each block's activity and data order

Publications (2)

Publication Number Publication Date
TW200837562A TW200837562A (en) 2008-09-16
TWI340899B true TWI340899B (en) 2011-04-21

Family

ID=39185714

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096134607A TWI340899B (en) 2006-09-15 2007-09-14 Non-volatile memory and method for class-based update block replacement rules

Country Status (4)

Country Link
JP (1) JP4682261B2 (enExample)
KR (1) KR101430097B1 (enExample)
TW (1) TWI340899B (enExample)
WO (1) WO2008033952A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9110781B2 (en) 2008-12-11 2015-08-18 Kabushiki Kaisha Toshiba Memory device and controlling method of the same

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101526497B1 (ko) * 2008-11-27 2015-06-10 삼성전자주식회사 시스템 온 칩 및 이에 대한 정보 처리 방법
US8688894B2 (en) * 2009-09-03 2014-04-01 Pioneer Chip Technology Ltd. Page based management of flash storage
KR101678868B1 (ko) 2010-02-11 2016-11-23 삼성전자주식회사 플래시 주소 변환 장치 및 그 방법
CN110063041B (zh) * 2016-12-21 2022-08-05 区块链控股有限公司 使用多个区块链交易来执行计算机实现的任务的方法和系统
TWI659373B (zh) * 2018-02-14 2019-05-11 財團法人工業技術研究院 區塊鏈系統及應用其的方法
US12001834B2 (en) 2019-12-12 2024-06-04 Lg Electronics Inc. Firmware provision apparatus and provision method therefor
TWI821152B (zh) * 2021-02-23 2023-11-01 慧榮科技股份有限公司 儲存裝置、快閃記憶體控制器及其控制方法
TWI808384B (zh) * 2021-02-23 2023-07-11 慧榮科技股份有限公司 儲存裝置、快閃記憶體控制器及其控制方法
CN115878729B (zh) * 2023-03-03 2023-05-02 湖北省楚天云有限公司 一种基于联盟链的节点区块存储分配优化方法及系统
CN119668523B (zh) * 2025-02-14 2025-06-03 合肥康芯威存储技术有限公司 一种存储器及其闪存块的分配方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100389867B1 (ko) * 2001-06-04 2003-07-04 삼성전자주식회사 플래시 메모리 관리방법
US7139864B2 (en) * 2003-12-30 2006-11-21 Sandisk Corporation Non-volatile memory and method with block management system
JP2007280108A (ja) * 2006-04-07 2007-10-25 Sony Corp 記憶媒体制御装置、記憶媒体制御方法、プログラム
US7779056B2 (en) * 2006-09-15 2010-08-17 Sandisk Corporation Managing a pool of update memory blocks based on each block's activity and data order

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9110781B2 (en) 2008-12-11 2015-08-18 Kabushiki Kaisha Toshiba Memory device and controlling method of the same
USRE48983E1 (en) 2008-12-11 2022-03-22 Toshiba Memory Corporation Memory device and controlling method of the same
USRE49921E1 (en) 2008-12-11 2024-04-16 Kioxia Corporation Memory device and controlling method of the same

Also Published As

Publication number Publication date
WO2008033952A3 (en) 2008-10-02
JP4682261B2 (ja) 2011-05-11
KR20090079197A (ko) 2009-07-21
KR101430097B1 (ko) 2014-08-13
JP2010503929A (ja) 2010-02-04
TW200837562A (en) 2008-09-16
WO2008033952A2 (en) 2008-03-20

Similar Documents

Publication Publication Date Title
TWI340899B (en) Non-volatile memory and method for class-based update block replacement rules
TWI371041B (en) Non-volatile memory and method for predictive programming
GB2434226B (en) Hierarchical memory correction system and method
EP2072018A4 (en) METHOD FOR MANUFACTURING IMPLANTATION GUIDE AND GUIDE BLOCK
IL184927A0 (en) Method for weighted overlap-add
IL186614A0 (en) Memory repair system and method
GB0601961D0 (en) Method
DE602006002241D1 (de) Speichersystem und Steuerungsverfahren dafür
EP2101689A4 (en) NUCLEUS REPLACEMENT DEVICE AND METHOD
TWI366917B (en) Transistor having recess channel and fabrication method thereof
EP1883931A4 (en) PREDICTIVE METHODS AND APPARATUS FOR NON-VOLATILE MEMORY
DE602006010481D1 (de) Speichersteuerung und Steuerverfahren dafür
EP2038595A4 (en) REFRIGERATOR AND CONTROL PROCEDURE THEREFOR
EP2013403A4 (en) DRYER AND OPERATING PROCESS THEREFOR
EP2029812A4 (en) BRIDGE CUSTOMER PROCEDURE FOR THE PRODUCTION OF THE BRIDGE
TWI316296B (en) Thin-film transistor and fabrication method thereof
TWI319190B (en) Method and apparatus for programming nonvolatile memory
TWI318348B (en) Memory management method
IL183235A0 (en) Method of making dorzolamide hydrochloride
EP1880112A4 (en) CYLINDRICAL DRAWER DISPENSER METHOD AND APPARATUS
GB0607482D0 (en) Programmable read-only memory
TWI346383B (en) Non-volatile memory system and method of forming one time field-programmable memory
EP2053870A4 (en) METHOD FOR CONTROLLING SERVICE CELL UPDATE
HU0600204D0 (en) Method and shuttering for making or repairing columns
TWI340473B (en) Nonvolatile memory and fabrication method thereof

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees