TWI339895B - Organic non-volatile memory material and memory device utilizing the same - Google Patents
Organic non-volatile memory material and memory device utilizing the sameInfo
- Publication number
- TWI339895B TWI339895B TW096116457A TW96116457A TWI339895B TW I339895 B TWI339895 B TW I339895B TW 096116457 A TW096116457 A TW 096116457A TW 96116457 A TW96116457 A TW 96116457A TW I339895 B TWI339895 B TW I339895B
- Authority
- TW
- Taiwan
- Prior art keywords
- same
- device utilizing
- organic non
- memory device
- volatile memory
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
- G11C13/0016—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising polymers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/20—Organic diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/50—Bistable switching devices
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW096116457A TWI339895B (en) | 2007-05-09 | 2007-05-09 | Organic non-volatile memory material and memory device utilizing the same |
US11/877,853 US7629607B2 (en) | 2007-05-09 | 2007-10-24 | Organic non-volatile memory material and memory device utilizing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW096116457A TWI339895B (en) | 2007-05-09 | 2007-05-09 | Organic non-volatile memory material and memory device utilizing the same |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200845378A TW200845378A (en) | 2008-11-16 |
TWI339895B true TWI339895B (en) | 2011-04-01 |
Family
ID=39968701
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW096116457A TWI339895B (en) | 2007-05-09 | 2007-05-09 | Organic non-volatile memory material and memory device utilizing the same |
Country Status (2)
Country | Link |
---|---|
US (1) | US7629607B2 (zh) |
TW (1) | TWI339895B (zh) |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6950331B2 (en) | 2000-10-31 | 2005-09-27 | The Regents Of The University Of California | Organic bistable device and organic memory cells |
US7274035B2 (en) * | 2003-09-03 | 2007-09-25 | The Regents Of The University Of California | Memory devices based on electric field programmable films |
CA2500938A1 (en) | 2004-03-24 | 2005-09-24 | Rohm And Haas Company | Memory devices based on electric field programmable films |
KR101114770B1 (ko) | 2004-12-24 | 2012-03-05 | 삼성전자주식회사 | 비휘발성 유기 메모리 소자의 제조 방법 및 그에 의해수득된 비휘발성 유기 메모리 소자 |
-
2007
- 2007-05-09 TW TW096116457A patent/TWI339895B/zh active
- 2007-10-24 US US11/877,853 patent/US7629607B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
TW200845378A (en) | 2008-11-16 |
US20080277651A1 (en) | 2008-11-13 |
US7629607B2 (en) | 2009-12-08 |
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