1338726 九、發明說明： 【發明所屬之技術領域】 優先權主張 本發明基於申請日為2005年ό月1日，申請案號為 60/686,787 » rTungsten Silicide Etch Process With ?e'uced Etch Rate Micro-loading」的臨時申請案主張優先權，特將 5玄臨時申請案全部内容包含於此作為參考。 【先前技術】 在半導體系之裝置(例如積體電路或平板顯示器)的製造過程 將材料層沈積至基板(例如，半導體晶誠玻璃板)表面上或自 =板表面蝕刻材料層。如在習知技術中所廣為人知的，吾人可藉 著各種技術來達成材料層的沈積及材料層的蝕刻，包含電漿增強 沈積及_。在電漿增強沈積或_中，基板之減積紐刻實際 上，生於電漿處理室之内部。在沈積或侧處理_，自合適的 源氣體形成賴以將材料層沈積至基板上，或侧基板未受餘刻 遮罩保護的區域並留下期望的圖型。 ^業界使用金蜃矽化唭來提#箩要的低電限内連錄路獲以掣造 密集、高成效的裝置。-種結構為M〇s電晶體之多晶金屬石夕化閉 極。其包含在具有摻雜之多晶石夕層之上部上的耐火金屬石夕化 如’ WS2、TiSi2、M〇Si2或TaSi2)。在一例示性處理中，藉由具有 摻雜但不具雜金>|㈣晶⑦，此類結構將内連線電阻減少至小 =15-30歐姆/平方。當最小幾合尺寸減㈣，内祕電阻增加。 對於具有最小幾合尺寸約為半微米的技術而言，導人耐火金屬多 曰曰矽化物處理大幅地降低閘極内連線之電阻。在最小幾合 中’石夕化其低片電阻及熱穩定性而成為金屬之選擇:4 目前之餅化金屬則處理具重賴刻速率微 題。矽化鎢在孤立特徵(iS0〗atedfeature)中的蝕刻速率高於在 徵t。由於嚴重的微負載程度’吾人需要更長的過賴刻操^寺 6 1338726 【發明内容】 =供:種;有降低之_速率微負載效應的改良 型石夕化鶴=_理。應注意：在喊種方式來實施本發明 不同理。以下將閣述本發明之數個發明實施例。 方上實將U供一種形成在基板上之層的蝕刻方法。該 物層形成於其上以及-圖型化之遮罩設置於該金屬二化 f。本方法亦包含：將包含含體、含氣氣體、錢氣體及含 氧氣體之侧氣體混合物供給至電裝處理室，艾 氟氣體的比例介於約5至約15。 ts 此外本方法包各.使用所供給之混合姓刻氣體在電裝處理 室中產生電漿，則蝴未受到_化鮮覆蓋之輯巾的金屬石夕 化物層，該圖型化遮罩定義出密集區及孤立區，其中所產生之電 f係甲於以降低夕_蝕刻逹率徵負載移除密凳區及恶立區中的金声 石夕化物層。 V ^1338726 IX. Description of the Invention: [Technical Field of the Invention] Priority Claim The present invention is based on the filing date of January 1, 2005, and the application number is 60/686,787 » rTungsten Silicide Etch Process With ?e'uced Etch Rate Micro- The provisional application of "loading" claims priority, and the entire contents of the special application of the 5th Xuan are included here for reference. [Prior Art] A material layer is deposited on a surface of a substrate (e.g., a semiconductor crystal glass plate) or a material layer is etched from a surface of a board in a semiconductor device (e.g., an integrated circuit or a flat panel display). As is well known in the art, we can achieve deposition of material layers and etching of material layers by various techniques, including plasma enhanced deposition and _. In the plasma enhanced deposition or _, the substrate subtraction moment is actually generated inside the plasma processing chamber. In the deposition or side treatment, a suitable source gas is formed to deposit a layer of material onto the substrate, or the side substrate is not protected by the residual mask and leaves the desired pattern. ^In the industry, the use of Jinhua Huayu to raise the low-energy limit intra-recorded roads to create dense, high-efficiency devices. - The structure is a polycrystalline metal stone of the M〇s transistor. It comprises a refractory metal such as 'WS2, TiSi2, M〇Si2 or TaSi2 on the upper portion of the doped polycrystalline layer. In an exemplary process, such a structure reduces the interconnect resistance to a small = 15-30 ohms/square by having doping but no impurity > | (tetra) crystal 7. When the minimum number of dimensions is reduced by (four), the internal resistance increases. For technologies having a minimum number of sub-micrometers of about a half micron, the introduction of a refractory metal multi-telluride treatment greatly reduces the resistance of the interconnect within the gate. In the smallest number of 'Shi Xihua's low sheet resistance and thermal stability, it becomes the choice of metal: 4 The current pie metal is treated with a problem of heavy rate. The etch rate of tungsten telluride in the isolated feature (iS0 atedfeature) is higher than that of the sign. Due to the serious degree of micro-loading, 'we need to have a longer time to practice the temple ^ 6 1338726 [invention] = for: species; there is a reduced rate of micro-load effect of the modified Shi Xihua crane = _ rational. It should be noted that the invention is practiced differently. Several inventive embodiments of the invention are set forth below. The U is provided with an etching method for forming a layer on the substrate. The layer is formed thereon and a patterned mask is disposed on the metal dimerization f. The method also includes supplying a side gas mixture comprising a body, a gas containing gas, a money gas, and an oxygen-containing gas to the electrical processing chamber, the ratio of the fluorinated gas being from about 5 to about 15. In addition, in the method package, each of the method uses a mixed gas source to generate a plasma in the electrical processing chamber, and the butterfly is not subjected to a metal-lithium layer of the towel, which is defined by the mask. Out of the dense area and the isolated area, the generated electric f system is used to reduce the eclipse and the eclipse layer in the stagnation area. V ^
在另一貫把例中，提供一種形成在基板上之層的餘刻方法。 該方法包含：將基板提供至電漿處理室中，該處理室上方配置有 RF能量供給，而偏壓能量供給係連接至基板支架，其中圖型化之 基板配置在基板支架上，基板上具有形成於其上的金屬石夕化物 層’而金屬矽化物層上方設置有圖型化遮罩。本方法更包含：將 NF；j氣體、C12氣體、Ν'2氣體及〇2氣體之姓刻混合氣體供給至電 漿處理室中，其中Ν2氣體對NF3氣體的比例介於約5至約。 此外，該方法包含：使用所供給的蝕刻氣體混合物在電聚處 理室產生電漿’以蝕刻未受到圖型化遮罩覆蓋之區域中的金屬石夕 化物層，該圖型化遮罩定義出密集區及孤立區，其中所產生之電 7 1338726 毁係用以在降低之侧速率微負載的情況下移除密集區及孤立區 中的金屬矽化物層。 自以下將，合賴及本發明之例示性原理的方 述’本發明之其他態樣及優點當愈形清晰。 【實施方式】 現將闡述數做良财化祕職理的例雜實關。孰知 此項技藝者應知：本發明可脫離此處所述之部分或全部細節而實 施。In another example, a residual method of forming a layer on a substrate is provided. The method includes: providing a substrate to a plasma processing chamber, wherein an RF energy supply is disposed above the processing chamber, and a bias energy supply is coupled to the substrate holder, wherein the patterned substrate is disposed on the substrate holder, and the substrate has A metallized layer formed on the metal layer and a patterned mask is disposed above the metal halide layer. The method further comprises: supplying a gas mixture of NF; j gas, C12 gas, Ν'2 gas and 〇2 gas into the plasma processing chamber, wherein the ratio of Ν2 gas to NF3 gas is between about 5 and about. Additionally, the method includes: generating a plasma in the electropolymerization chamber using the supplied etching gas mixture to etch a metallization layer in a region not covered by the patterned mask, the patterned mask defining In dense and isolated areas, the resulting electricity 7 1338726 is used to remove the metal telluride layer in the dense and isolated regions with reduced side rate microloading. The aspects and advantages of the invention will be apparent from the following description. [Embodiment] Now, we will explain the examples of doing a good job of good financial management. It is to be understood by those skilled in the art that the present invention may be practiced with some or all of the details described herein.
爲板100上具有矽化鎢及光阻遮罩之例示性_ ί如Λ喊各種類型之裝置。例如，某些記憶體翠For example, there are various types of devices that have tungsten carbide and photoresist masks on the board 100. For example, some memories
⑽上。在氧化層11G之頂部上為多祕H 於魏鶴層13°上方。硬遮罩層所 了例如匕3 —軋化矽、氮化矽、非晶形碳等。 某J==:;=r微負載則 :…及具有孤立特徵的e域中表現山从纠 iti.不同。對於某些魏鶴_處理而言，在孤立區中的石夕化 鎢(WS!X，X〜2)的蝕刻速率遠大於密集區中之蝕刻速率。 n圖2A及2β顯示在密集特徵區(圖2A)中及在孤立特徵區喝 率自H細微負載效應的嚴重程度可由^1 較’其係藉由下列方式來計算··自孤立區中 方程式ai示了二Y幽與爾f _魏鎮厚度。 mVA^A % «=(Hi-Hd)/((Hi+Hd)/2)xl00% ’ ^知之魏鎢關處理而言，微負載可高達概。 在孤立特徵區(圖2B)中，職表面⑷較開闊且裸露於钱刻 8 =學品之部分較大。相反地 品可接觸到的特徵間面積A =集^j(®2咐，银刻化學 密集區中之蝕刻速率相對地小於^立^立特 =面積4。因此， 中的钱刻速率差導致了微^、^立£中之_速率。此兩區域 ;理而言刪率微以 需要較長的騎刻操作來確修越重程度， 區中特徵間的矽化鎢皆受到:主呤二日日圓）的母一處在密集 損失。除了閘極氧化層受到貫穿2氧到貫穿會導效良率 」係用咖^種_射化鶴輪廓，其中接近魏鶴及 之矽化鎢的寬度大於剩餘矽化鎢的寬度。介於特ί間的； =鎢足及侧殘㈣可影響_觀並可減少裝置 望獲得具有最小微負載效應之魏鸫_處理，以消 除閘氧化層党到貫穿、石夕化鶴足及餘刻殘留物。 根據一實施例之處理使用含氟氣體如NF3、SF6、Q ， 含氣氣 ΗΓ丨，錢氣體純^叫，冬“贈如心 選擇性之惰性氣體如He、Ar、Ne、Kr或X卜自含氟氣體之氣自 由基及自含氣氣體之氣自由基提供尤其適用於蝕刻18^的蝕刻物 種。於蝕刻WSix時，氟自由基比氣自由基更活躍。根據一實施例， 在蝕刻期間需要氣自由基，因其可助於形成蝕刻聚合物以保護特 徵側壁使其不受氟自由基蝕刻。含氧氣體幫助含氟氣體、含氣氣 體及含氮氣體解離。含氮氣體有助於在開闊區(或孤立特徵區）中減 緩WSix蝕刻。 在一例中，含氣氣體對含氣氣體之流量比介於約〇 3至約3 之間’較佳值介於約0.5至約1.5之間。含氟氣體對含氧氣體之比 介於約1至10之間，較佳值介於約5至約7之間。含氮氣體對含 氟氣體之比介於約5至約15之間’較佳值介於約6至10之間， 1338726 =佳值介闕7涵9之間。彳雜氣體流量條G _(每分鐘 Γί立方公分)至約seem。總氣體混合物流量介於約15〇 _ ^約1〇〇〇sccm之間，而較佳值介於約3〇〇sccm至約6〇〇咖。 水溫介於約20。(：至約75弋，較佳值介於約25 %至約6〇弋。 ，壓力介於約3mTorr至約15mTorr。能量介於約瓦至約1〇〇〇 瓦。基板偏壓介於約100伏特至約3〇〇伏特， 一特定實施例中’含氣氣體為NF3、含氣氣體為C12、含氧 氣為〇2、含氮氣體為N2而在此混合氣體中並未使用惰性氣體。 K主要用以鈍化WSix表面使其不易於氟蝕刻化學品起反 應。圖4A顯示受到氟侧之WSix表面。_ 4B顯示某些受到氮 鈍化(或保護)而未受到氟钱刻之界表面位置。藉由增加A流量， 大部分W表面位置受到保護(或鈍化)而不與氣自由基作用。斑 於密集特徵間之W表面位置(或圖2A中所示之面積〜中)相比， =特徵區如圖2B巾獅之面積&具有較多之w表面位置可與 牲;之保護。因此，在氣體混合物巾增滅以在孤立 ㈣㈣不受賴_自㈣讀，㈣緩孤立特 二品的蝕刻速率。在孤立特徵區中所增加的氮保護補償了此區 中因裸露至蝕刻化學品而增加的蝕刻速率。因一方面，在密集區 ，特徵間的面積Ad(如® Μ中所暴露錢保護中較少，因、此 刻速率減少的程度小於孤立特徵區。然而，密集特徵區因其 ，路至_化學品較少，故其侧速率亦少於孤立特徵區。因此、， ，混合氣體巾增加_著地減少或完全地移除了侧速率微負 ^在-實_巾’歧良式之_方法财化鎢_速率負載 y至介於約〇%至約m間。在另—實施例中，此改良式之蚀刻 法將石夕化鶴餘刻速率負載減少至介於約〇%至約間。 圖5A及5B顯示取自經侧之晶圓的密集特徵(圖5A)及孤立 特徵(圖SB)之橫剖面樣本的並列掃描式電子顯微鏡(SEM)相片。在 1338726 密集特徵區中石夕化鶴經過姓刻#厚度(圖5A)約為134nm 特徵區中矽化鎢經過蝕刻的厚度(圖5B)亦約為134nm。 鎢餘刻處理達成近乎零之钱刻速率微負載。 由於近乎零之_速率微負載處理的能量，吾人 過姓刻並大幅地減少閘極氧化層受到貫穿。此外 请 少矽化鎢足及蝕刻殘留物。 大^地減(10) Upper. On the top of the oxide layer 11G is a multi-secret H above the Weihe layer 13°. The hard mask layer is, for example, 匕3 - rolled ruthenium, tantalum nitride, amorphous carbon or the like. A J==:;=r micro-load is: ... and the e-domain with isolated features is different from the one. For some Weihe_ treatments, the etching rate of Shihuahua tungsten (WS!X, X~2) in the isolated region is much larger than the etching rate in the dense region. n Figures 2A and 2β show that in the dense feature area (Fig. 2A) and in the isolated feature area, the severity of the H-load effect from H can be calculated by ^1 compared to the following method: · Equation in the self-isolated area Ai shows the thickness of two Y yue and er f _ Weizhen. mVA^A % «=(Hi-Hd)/((Hi+Hd)/2)xl00% ’ ^We know that the micro load can be as high as possible. In the isolated feature area (Fig. 2B), the occupational surface (4) is more open and bareer than the money engraving 8 = the part of the school is larger. On the contrary, the area between the features that can be touched by the product is A = set (j2), and the etching rate in the chemically dense region of the silver engraving is relatively smaller than that of the ^ ^ 立 = area 4. Therefore, the difference in the rate of money is caused by The _ rate of the micro ^ ^ ^ 立 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 The mother of the Japanese yen is intensively lost. In addition to the gate oxide layer being penetrated by 2 oxygen to penetrate the effect rate, the width of the tungsten carbide is larger than the width of the remaining tungsten carbide. Between the specialties; = tungsten foot and side residual (four) can affect the _ view and reduce the device to obtain the minimum micro-load effect of Wei Wei _ treatment, in order to eliminate the gate oxide layer party to run through, Shi Xihua crane foot and Residual residue. According to an embodiment, the treatment uses a fluorine-containing gas such as NF3, SF6, Q, a gas-containing gas, a money gas, a pure gas, and a winter "give a selective inert gas such as He, Ar, Ne, Kr or X. The gas radicals from the fluorine-containing gas and the gas radicals from the gas-containing gas provide an etching species that is particularly suitable for etching. When etching WSix, the fluorine radical is more active than the gas radical. According to an embodiment, in etching Gas radicals are required during the process because they help to form an etched polymer to protect the feature sidewalls from fluorine radical etching. The oxygen-containing gas helps dissociate the fluorine-containing gas, the gas-containing gas and the nitrogen-containing gas. In the open area (or isolated feature area), the WSix etch is slowed down. In one example, the flow ratio of the gas-containing gas to the gas-containing gas is between about 〇3 and about 3'. Preferably, the value is between about 0.5 and about 1.5. The ratio of fluorine-containing gas to oxygen-containing gas is between about 1 and 10, preferably between about 5 and about 7. The ratio of nitrogen-containing gas to fluorine-containing gas is between about 5 and about 15. Between the 'better value is between about 6 to 10, 1338726 = good value between 7 han 9. Noisy gas The flow bar G _ (Γ 立方 cubic centimeters per minute) to about see. The total gas mixture flow rate is between about 15 〇 _ ^ about 1 〇〇〇 sccm, and the preferred value is between about 3 〇〇 sccm to about 6 〇. The water temperature is between about 20. (: to about 75 Torr, preferably between about 25% and about 6 Torr. The pressure is between about 3 mTorr and about 15 mTorr. The energy is between about watts and about 1 Torr. The substrate bias is between about 100 volts and about 3 volts. In a particular embodiment, the 'gas-containing gas is NF3, the gas-containing gas is C12, the oxygen-containing gas is 〇2, and the nitrogen-containing gas is N2. No inert gas is used in this mixed gas. K is mainly used to passivate the WSix surface so that it is not susceptible to fluorine etching chemicals. Figure 4A shows the WSix surface on the fluorine side. _ 4B shows some nitrogen passivation (or protection) The surface position of the boundary is not affected by the fluorine. By increasing the A flow rate, most of the W surface position is protected (or passivated) without reacting with the gas radicals. The W surface position between the dense features (or Figure 2A) Compared with the area shown in the figure ~, the characteristic area is as shown in Figure 2B. The area of the lion has a more w surface position. Therefore, the gas mixture towel is added to the etch rate in the isolated (four) (four) unreliable _ self (four) read, (iv) slow isolation special product. The increased nitrogen protection in the isolated feature area compensates for this area due to exposure to The etch rate is increased by etching the chemical. On the one hand, in the dense area, the area Ad between the features (such as the amount of money exposed in the Μ 保护 is less protected, because the rate of reduction at this moment is less than the isolated feature area. However, dense Because of its small area, the characteristic area has less side chemicals than the isolated characteristic area. Therefore, the mixed gas towel increases _ landing reduction or completely removes the side rate micro negative ^ in the real _ towel 'disparity _ method financial tungsten _ rate load y to between about 〇% to about m. In another embodiment, the modified etching method reduces the Shi Xihua crane residual rate load to between about 〇% and about. Figures 5A and 5B show side-by-side scanning electron microscope (SEM) photographs of cross-sectional samples taken from the dense features of the wafer on the side (Figure 5A) and isolated features (Figure SB). In the dense characteristic area of 1338726, the thickness of the Shihuahua crane is about 134 nm. The thickness of the tungsten deposit (Fig. 5A) is about 134 nm. The tungsten residual processing achieves a near-zero money engraving rate microload. Due to the near-zero rate of micro-load processing energy, we have surpassed the name and greatly reduced the gate oxide layer. In addition, please reduce the tungsten foot and etch residue. Large reduction
上述之矽化鎢蝕刻可在各種類型的蝕刻室中施行。圖6 毁處理系統之概®，其包含可肋_上述處理而進行石夕化 祕刻的電毁處理反應器6〇1。電漿處理反應n⑽械 漿餘刻反應器，並包含電聚處理室6〇4。射頻㈣電源624及奸 偏壓電源628供給能量以產生電漿644，並影響在電漿室6〇4内 產生之電漿。在一實施例中，由電源624所供給之奸能量約為 13.56 MHz°RF電源624可藉由能量控制器(未圖示)來控制並藉由 RF匹配網路(未圖示)來調整。RF電源624提供能量至位於電漿室 604附近的線圈622。設置RF透明窗654以使線圈622與電& 604分離，但使能量自線圈622傳遞至電漿室6〇4。 、 RF偏壓電源628係用以將Rp訊號供給至電漿室6〇4内適於 接收基板6T7之錚電夾頭電梓62+6，在電坧62.6 t方彥4 -吉洎OX：) 偏壓，該基板627例如待處理之半導體晶圓工作件或玻璃板：好 偏壓電源^628可藉由能量控制器(未圖示)來控制並藉由处匹配網 路(未圖示)來調整。電漿處理反應器包含氣體供給機構(未圖示）， ，機構包含n著氣體歧管(未圖示)而作依附之朗氣體源(軍數或 複數，未圖示)以將蝕刻處理所需之適當化學品供給至電漿室604 之内部。氣體排放管632連接至排放泵浦634以自電漿室6〇4移 除廢氣及粒子，並維持電漿室604室之特定壓力。 溫度控制器680藉由控制加熱電源684來控制設置於夾頭626 内的加熱器682之溫度。以一般辭彙來說，即在電漿室6〇4中之 真空環境下藉由暴露基板627至離子化之氣體成份(電漿)而達到 基板蝕刻。蝕刻處理開始於氣體輸送進入電漿室6〇4時。由線圈 11 Γ氣量使包含含氟氣體、含氣氣體、含氧氣體、含 擇性惰性氣體的反應氣體離子化。由電極626所輸送 整^Ϊ 627上感應出—DC偏壓以控制對基板627進行轟 面務冷#風&向及能量。在蝕刻處理期間，電漿與基板627之表 發生化予作用以移除未受遮罩覆蓋之材料。 在本發明之較佳實施例巾，—合適的電漿處理機台為由加州 之科林研發公司(Lam如记灿C〇rp〇rati〇n)所提供之 節可表昭加⑽。圖6中所示之電聚處理室的其他細 專利%美國專職6,939,811與美國專利號6,776,851 亦可用以此作為參考。除了魏鶴之外’上述化學品 h ,. . 土他金屬石夕化物，如TiSi2、MoSh或TaSi2。在-實 妒、1X為非化學計量的，且可包含其他金屬或合金。 a、、、以吾人僅就部分細節來闡述本發明以使本明發明更清 产兄下，技藝者應了解：在不脫離隨附申請專利範圍的 ==性r且本發明並不限於此所 範圍内及隨附帽專利翻之等效範_對本發_行修改。 【圖式簡單說明】 之標配合附圖’本發明將愈形清晰，相同 ，基板上具有魏叙光阻遮罩的麻性閘極疊。 圖A颂=在密集特徵區中受到蝕刻的矽化鎢。 圖2B顯示在孤立特徵區中受到侧的石夕化鶴。 圖3A顯示石夕化鶴足。 圖3B顯示介於特徵間的矽化鎢蝕刻殘留物。 圖4A顯示氟自由基蝕刻WSix表面。 ，3顯示氟自由無法钱刻受到氮鈍化之㈣表面。 圖顯不在密集特徵區中受到蝕刻的閘極疊。 1338726 圖5B顯示在孤立特徵區中受到蝕刻的閘極疊。 圖6顯示姓刻石夕化鑛之例示性電聚#刻系統。 【主要元件符號說明】 100 :基板 110:氧化層 120:多晶矽層 130 :矽化鎢層 140:圖型化之光阻層或矽遮罩層 500 :電漿處理系統 籲6G1 :電聚處理反應器 604 :電漿處理室 622 :線圈 624 :射頻(RF)電源 626 :靜電夾頭電極 627 :基板 628 : RF偏壓電源 : ϋ轉诽旖瞢 — . ' · ·从 / ^ * I — 634 :排放泵浦 _ 644 :電漿 654 : RF透明窗 '680:溫度控制器 682:加熱器 684 :加熱電源 13The above-described tungsten-tungsten etching can be performed in various types of etching chambers. Fig. 6 is a schematic diagram of a destructive processing system, which comprises an electrosurgical treatment reactor 6〇1 which can perform the above-mentioned treatment and carry out the secret treatment of Shi Xihua. The plasma treatment reaction n (10) the mechanical residual reactor and contains an electropolymerization treatment chamber 6〇4. The radio frequency (4) power source 624 and the bias voltage source 628 supply energy to generate the plasma 644 and affect the plasma generated in the plasma chamber 6〇4. In one embodiment, the energy supplied by power source 624 is approximately 13.56 MHz. RF power source 624 can be controlled by an energy controller (not shown) and adjusted by an RF matching network (not shown). RF power source 624 provides energy to coil 622 located adjacent to plasma chamber 604. RF transparent window 654 is provided to separate coil 622 from electrical & 604, but to transfer energy from coil 622 to plasma chamber 6〇4. The RF bias power supply 628 is used to supply the Rp signal to the electric chuck 62+6 in the plasma chamber 6〇4 suitable for receiving the substrate 6T7, in the electric raft 62.6 t Fang Yan 4 - Ji 洎 OX: Bias, the substrate 627, such as a semiconductor wafer workpiece or glass plate to be processed: a good bias power supply 628 can be controlled by an energy controller (not shown) and connected by a network (not shown) ) to adjust. The plasma processing reactor includes a gas supply mechanism (not shown), and the mechanism includes a gas source (armage or plural, not shown) to which the gas manifold (not shown) is attached to the etching treatment Appropriate chemicals are required to be supplied to the interior of the plasma chamber 604. A gas discharge pipe 632 is connected to the discharge pump 634 to remove exhaust gas and particles from the plasma chamber 6〇4 and maintain a specific pressure in the chamber of the plasma chamber 604. Temperature controller 680 controls the temperature of heater 682 disposed within chuck 626 by controlling heating power source 684. In the general vocabulary, the substrate etching is achieved by exposing the substrate 627 to the ionized gas component (plasma) in a vacuum environment in the plasma chamber 6〇4. The etching process begins when the gas is delivered into the plasma chamber 6〇4. The reaction gas containing a fluorine-containing gas, a gas-containing gas, an oxygen-containing gas, and an optional inert gas is ionized by the amount of helium gas of the coil 11. A DC bias is induced by the electrode 626 to control the substrate 627 to perform a blasting of the wind and the energy. During the etching process, the plasma and substrate 627 are activated to remove material that is not covered by the mask. In a preferred embodiment of the present invention, a suitable plasma processing machine is provided by the Colin Research and Development Corporation of California (Lam R. C〇rp〇rati〇n) (10). Other fine patents of the electropolymerization chamber shown in Fig. 6 can also be used as a reference for US Patent No. 6,939,811 and U.S. Patent No. 6,776,851. In addition to Wei He, the above-mentioned chemicals h , . . . other metals such as TiSi2, MoSh or TaSi2. In - 妒, 1X is non-stoichiometric and may contain other metals or alloys. A,, and the present invention will be described in terms of only a part of the details to make the invention clearer, and the skilled artisan will understand that the present invention is not limited to the present invention without departing from the scope of the accompanying claims. The scope of the patent and the accompanying cap patent are translated as follows. BRIEF DESCRIPTION OF THE DRAWINGS The subject matter of the present invention will be clearer and identical. The substrate has a numbness gate stack with a Weisui photoresist mask. Figure A颂 = tungsten telluride that is etched in a dense feature region. Fig. 2B shows the Shi Xihua crane on the side in the isolated feature area. Figure 3A shows the Shi Xihua crane foot. Figure 3B shows the tungsten telluride etch residue between features. Figure 4A shows a fluorine radical etched WSix surface. , 3 shows that the fluorine free can not be engraved by the nitrogen passivation (four) surface. The figure shows a gate stack that is not etched in the dense feature area. 1338726 Figure 5B shows a gate stack that is etched in an isolated feature region. Figure 6 shows an exemplary electro-convergence system of the surnamed Shixia Chemical. [Main component symbol description] 100: Substrate 110: Oxide layer 120: Polycrystalline germanium layer 130: Tungsten telluride layer 140: Patterned photoresist layer or germanium mask layer 500: Plasma processing system 6G1: Electropolymerization reactor 604: plasma processing chamber 622: coil 624: radio frequency (RF) power source 626: electrostatic chuck electrode 627: substrate 628: RF bias power supply: ϋ 诽旖瞢 - . ' · · from / ^ * I - 634 : Drain Pump _ 644 : Plasma 654 : RF Transparent Window '680 : Temperature Controller 682 : Heater 684 : Heating Power Supply 13