(1) (1)1335637 九、發明說明 ， 【發明所屬之技術領域】 本發明係關於將複數片基板成爲以特定的間隔相互平 行而支持的基板支持具、具備該基板支持具的基板處理單 元及使複數片基板支持於基板支持具的基板支持方法。 【先前技術】 以往，在半導體零件或平面顯示器等的製造過程中， 係進行藉由使用基板處理裝置對半導體晶圓或液晶基板的 表背面實施洗淨或乾燥等各種處理的基板處理步驟。就此 種基板處理步驟中使用的基板處理裝置而言，已知有對基 板一片一片地進行處理的單片處理室基板處理裝置、和對 複數片基板一次進行處理的批次（batch)處理式基板處理 裝置。尤其，批次處理式基板處理裝置的使用目的在於藉 由將複數片基板一次處理，縮短每片基板的處理時間以達 成處理步驟之生產量（throughput )的提升。在此，於批 次處理式基板處理裝置中，係成爲可對例如由50片基板 所構成之基板的批次，進行一次處理，具體來說，係在基 板處理步驟中按每個基板的批次來實施洗淨或乾燥等各種 的處理。 就上述批次處理式基板處理裝置來說，已知有以將基 板支持具昇降自如地配設於處理容器的內部，同時將噴射 洗淨水或乾燥蒸氣等的處理劑之噴嘴配設於處理容器的內 部，俾可在處理容器的內部同時處理複數片基板的方式構 -4- (2) (2)1335637 成者。 ， 在此種習知的基板處理裝置中，設有從基板支持具之 細長的機械臂的下端部延伸於水平方向的支持體，該支持 體係將複數片基板成爲以特定間隔相互平行而支持。 又，習知的基板處理裝置中，係以在處理容器的內部 將噴嘴成爲與基板支持具之支持體平行的方式，使其延伸 於前後方向（水平方向）的狀態安裝。 而且，習知的基板處理裝置中，係從噴嘴朝向處理容 器內的複數片基板噴射處理劑，且藉由從該噴嘴所噴射的 處理劑來處理各基板的表面（例如參照日本特開平11 -1 862 1 2號公報等）。 然而，由於在上述習知的基板處理裝置中，係利用安 裝於細長的機械臂之下端部的支持體來支持複數片基板， 所以藉由支持體所支持之複數片基板中最接近於機械臂的 基板與機械臂面對的部分（基板的中央部分）係成爲被機 械臂遮蔽的狀態，其他的部分（基板的左右部分）沒有被 任何東西遮蔽而成爲露出的狀態。 所以，在上述習知的基板處理裝置中，根據從噴嘴噴 射之處理劑的種類或噴射量等處理條件，最接近於機械臂 的基板中成爲被機械臂遮蔽之狀態的基板的中央部分、與 沒有被機械臂遮蔽之狀態的基板的左右部分，從噴嘴所噴 射之處理劑的流動狀態係不相同，因此會有發生處理不良 的疑慮。 又’爲了因應上述的問題，已知有將藉由支持體所支 -5- (3) (3)1335637 持的複數片基板中最接近於機械臂的基板設成虛設基板（ dummy plate)的方法（例如，參照日本特開平 6- 84868 號公報等）。也就是說，藉由支持體所支持之複數片基板 中從機械臂側數來第2片以後的基板，因爲被最接近於機 械臂的基板（虛設基板）所遮蔽，所以不會受到上述機械 臂的影響。因此，就由支持體所支持之複數片基板中從機 械臂側數來第2片以後的基板而言，可使基板表面之處理 劑的流動狀態均勻化，且可將處理不良的發生防範於未然 。然而，在此種基板處理方法中，每次都必須將虛設基板 廢棄，再者，由支持體所支持且進行所期望之處理的基板 數量會對應虛設基板的數量而減少，所以會有處理步驟之 生產量減少的問題。 又，在使用上述虛設基板的處理方法中，使用例如 IPA氣體（異丙醇氣體）作爲處理劑時，虛設基板也會吸 附與從機械臂側數來第2片以後之基板大致等量的IPA， 這會導致虛設基板的溫度大幅上昇。因此，一旦虛設基板 的溫度大幅上昇時，IPA會變得難以被吸附於該虛設基板 附近的其他基板，在該虛設基板附近的其他基板會有發生 處理不良的疑慮。爲了解決該問題，必須過度地供給IPA 氣體，會有運轉費用（running cost)增加等的問題產生 【發明內容】 本發明考慮此點而開發者，其目的在於提供一種可用 -6 - (4) (4)1335637 遮蔽面覆蓋藉由基板支持具所支持之複數片基板中最接近 於機械臂的基板，且可使基板表面之處理劑的流動狀態均 勻化，因此，可將處理不良的發生防範於未然，而且，對 於基板支持具所支持的所有基板，可藉由處理劑等均勻地 進行處理的基板支持具、基板處理單元及基板支持方法。 本發明之基板支持具，係將複數片基板成爲以特定的 間隔相互平行而支持的基板支持具，其特徵爲具備：機械 臂，延伸於鉛直方向，成爲至少在鉛直方向昇降自如；支 持體，從上述機械臂延伸於水平方向而設置，且用以支持 基板的支持溝係沿著水平方向以特定的間隔形成有複數個 :和遮蔽體，係被設置於與應藉由上述支持體所支持之複 數片基板中最接近於上述機械臂之基板對向的遮蔽體，由 該遮蔽體及上述機械臂所形成之與最接近於上述機械臂之 基板對向的遮蔽面係成爲與基板的表面大致相同的形狀或 比基板的表面更廣，又，由比熱大於基板的材料所構成。 根據此種基板支持具，可用遮蔽體覆蓋藉由支持體所 支持之複數片基板中最接近於機械臂之基板在機械臂側的 表面，且可使基板表面之處理劑的流動狀態均勻化，可將 最接近該機械臂之基板之處理不良的發生防範於未然。而 且，由於遮蔽體係由比熱大於基板的材料所構成，故即使 使用乾燥劑之IPA氣體（異丙醇氣體）等作爲對基板進行 處理的處理劑，且IP A等吸附於遮蔽體時，該遮蔽體的溫 度也幾乎不會上昇。因此，即使充分量的IP A被吸附於遮 蔽體附近的基板，也可防止該基板發生處理不良的情形， (5) (5)1335637 同時可使IPA氣體的使用量減少。 在此，上述基板支持具中，上述遮蔽體係以成爲可對 上述機械臂裝卸自如爲佳。藉此構成，可將遮蔽體附設於 既有的基板支持具，同時可使遮蔽體之更換作業的作業性 提升。 本發明之其他的基板支持具係將複數片基板成爲以特 定的間隔相互平行而支持的基板支持具，其特徵爲具備： 機械臂，延伸於鉛直方向，成爲至少在鉛直方向昇降自如 :和支持體，從上述機械臂延伸於水平方向而設置，且用 以支持基板的支持溝係沿著水平方向以特定的間隔形成有 複數個，並且上述機械臂具有與應藉由上述支持體所支持 之複數片基板中最接近於該機械臂之基板對向的遮蔽部分 ，且該遮蔽部分中與最接近於上述機械臂之基板對向的遮 蔽面係成爲與基板的表面大致相同的形狀或比基板的表面 更廣，又，該遮蔽部分係由比熱大於基板的材料所構成。 根據此種基板支持具，可用機械臂的遮蔽部分覆蓋藉 由支持體所支持之複數片基板中最接近於機械臂之基板在 機械臂側的表面，且可使基板表面之處理劑的流動狀態均 勻化，可將最接近於該機械臂之基板之處理不良的發生防 範於未然。而且，由於機械臂的遮蔽部分係由比熱大於基 板的材料所構成，故即使使用乾燥劑之IPA氣體（異丙醇 氣體）等作爲對基板進行處理的處理劑，且IPA等吸附於 機械臂的遮蔽部分時，該遮蔽部分的溫度也幾乎不會上昇 。因此，即使充分量的IP A被吸附於機械臂之遮蔽部分附 (6) 1335637 近的基板，也可防止該基板發生處理不 使IPA氣體的使用量減少。 此外，上述各基板支持具中，上述 大於基板的合成樹脂所構成爲佳。尤其 由聚醚醚酮（PEEK)、聚三氟氯乙烯（ 乙烯（PTFE)及聚偏氟乙烯（PVDF) 少任一者所構成更爲理想。 本發明之基板處理單元，其特徵爲 ，對複數片基板在內部藉由處理劑同時 支持具，配設於上述處理容器的內部， 爲以特定的間隔相互平行而支持，而上 :機械臂，延伸於鉛直方向，成爲至少 如；和支持體，從上述機械臂延伸於水 用以支持基板的支持溝係沿著水平方向 有複數個；和遮蔽體，係被設置於與應 支持之複數片基板中最接近於上述機械 蔽體，且由該遮蔽體及上述機械臂所形 述機械臂之基板對向的遮蔽面係成爲與 同的形狀或比基板的表面更廣，又，由 料所構成。 又，本發明之其他的基板處理單元 :處理容器，對複數片基板在內部藉由 理；和基板支持具，配設於上述處理容 數片基板成爲以特定的間隔相互平行而 良的情形，同時可 遮蔽體係以由比熱 ，上述遮蔽體係以 PCTFE )、聚四氟 所構成的群組中至 :具有：處理容器 進行處理；和基板 且將複數片基板成 述基板支持具具有 在鉛直方向昇降自 平方向而設置，且 以特定的間隔形成 藉由上述支持體所 臂之基板對向的遮 成之與最接近於上 基板的表面大致相 比熱大於基板的材 ，其特徵爲：具有 處理劑同時進行處 器的內部，且將複 支持，而上述基板 -9- • (7) 1335637 支持具具有：機械臂·，延伸於鉛直方向，成爲至少在鉛直 方向昇降自如；和支持體，從上述機械臂延伸於水平方向 而設置，且用以支持基板的支持溝係沿著水平方向以特定 的間隔形成有複數個，並且上述機械臂具有與應藉由上述 " 支持體所支持之複數片基板中最接近於該機械臂之基板對 向的遮蔽部分，且該遮蔽部分中與最接近於上述機械臂之 基板對向的遮蔽面係成爲與基板的表面大致相同的形狀或 φ 比基板的表面更廣，又，該遮蔽部分係由比熱大於基板的 材料所構成。 根據此種各基板處理單元，由於係各自具有上述各基 板支持具，所以可用遮蔽面覆蓋由基板支持具所支持之複 數片基板中最接近於機械臂的基板，且可使基板表面之處 ' 理劑的流動狀態均勻化，因此，可將處理不良的發生防範 於未然，而且，對於基板支持具所支持的所有基板，可藉 由處理劑等均勻地進行處理。 • 本發明之基板支持方法，係藉由基板支持具支持使複 數片基板以特定間隔成爲相互平行的基板支持方法，其特 徵爲具備下列步驟：準備具有：機械臂，延伸於鉛直方向 ，成爲至少在鉛直方向昇降自如；和支持體，從上述機械 臂延伸於水平方向而設置，且用以支持基板的支持溝係沿 著水平方向以特定的間隔形成有複數個；和遮蔽體，係被 設置於與應藉由上述支持體所支持之複數片基板中最接近 於上述機械臂之基板對向的遮蔽體，且由該遮蔽體及上述 機械臂所形成之與最接近於上述機械臂之基板對向的遮蔽 -10- (8) (8)1335637 面係成爲與基板的表面大致相同的形狀或比基板的表面更 廣，又，由比熱大於基板的材料所構成之基板支持具的步 驟；以及使複數片基板支持於上述基板支持具的上述支持 體，此時被支持於上述支持體的複數片基板中最接近於上 述遮蔽體之基板的背面面向該遮蔽體的步驟。 本發明之其他的基板支持方法，係藉由基板支持具支 持使複數片基板以特定間隔成爲相互平行的基板支持方法 ，其特徵爲具備下列步驟：準備具有：機械臂，延伸於鉛 直方向，成爲至少在鉛直方向昇降自如；和支持體，從上 述機械臂延伸於水平方向而設置，且用以支持基板的支持 溝係沿著水平方向以特定的間隔形成有複數個，並且上述 機械臂具有與應藉由上述支持體所支持之複數片基板中最 接近於該機械臂之基板對向的遮蔽部分，且該遮蔽部分中 與最接近於上述機械臂之基板對向的遮蔽面係成爲與基板 的表面大致相同的形狀或比基板的表面更廣，又，該遮蔽 部分係由比熱大於基板的材料所構成之基板支持具的步驟 ;以及使複數片基板支持於上述基板支持具之上述支持體 ，此時被支持於上述支持體的複數片基板中最接近於上述 機械臂之遮蔽部分之基板的背面面向該遮蔽部分的步驟。 根據此種各基板支持方法，由於被支持於支持體的複 數片基板中最接近於遮蔽體或機械臂之遮蔽部分的基板， 其背面係面向遮蔽體或機械臂的遮蔽部分，所以在該基板 中進行處理之面的表面沒有面向遮蔽體或機械臂的遮蔽部 分。因此，可使對於最接近於遮蔽體或機械臂之遮蔽部分 (9) (9)1335637 之基板表面的處理，與對於其他基板表面的處理均勻化。 此外，上述各基板支持方法中，使複數片基板支持於 上述基板支持具的上述支持體時，以嵌入相鄰之支持溝的 兩片基板的表面彼此或背面彼此相對的方式，使各基板支 持於上述支持體爲佳。根據此種基板支持方法，對於被支 持於支持體的各基板，可使進行處理之面的表面彼此相對 ，且最接近於遮蔽體或機械臂之遮蔽部分的基板也與相鄰 的其他基板，表面彼此係相對，所以可使對於所有基板之 表面的處理均勻化。 【實施方式】 以下，參照圖面，說明具備具有本發明之基板支持具 之基板處理單元（基板洗淨乾燥單元）的基板處理裝置之 具體構成。此外，以下的說明是以在將半導體基板（晶圓 )洗淨後，予以乾燥的基板處理裝置適用本發明之情形爲 例來說明。 如第1圖所示，基板處理裝置1具備：進行收容複數 片晶圓2(基板）之載體（carry ) 3的搬入及搬出的載體 搬入搬出部4;和藉由組合收容於複數載體3的晶圓2, 而形成一次處理用批次（batch) 5的批次形成部6;和按 各批次5進行晶圓2之洗淨處理及乾燥處理的基板處理部 Ί。 載體搬入搬出部4具有：供載置載體3的載體平台（ carry stage ) 8 ;和形成於該載體平台8的密閉狀開關門9 -12- (10) (10)1335637 。在開關門9的內側配設有載體搬送機構1 0。搬入晶圓2 時，可利用該載體搬送機構10，將載置於載體平台8的載 體3依需要暫時保管於載體儲存部（carry stock) 11，同 時將該載體3搬送至載體載置台12。 又，在載體搬入搬出部4中，對於收容有在基板處理 部7完成一連串處理之晶圓2的載體3，則與上述搬入時 相反地，將載置於載體載置台12的載體3藉由載體搬送 機構1〇依需要暫時保管於載體儲存部11，同時將該載體 3搬送至載體平台8。 在批次形成部6中，於該批次形成部6與載體搬入搬 出部4之間形成有密閉狀的開關門1 3。批次形成部6具有 :在開關門1 3的內側，用以將收容於載體3的複數片晶 圓2同時搬送的基板搬送機構14;和一邊將藉由該基板搬 送機構1 4所搬送到之晶圓W的配列間隔變更成一半，一 邊從該晶圓2形成批次5的批次形成機構15;和變更藉由 基板搬送機構14所搬送之複數片晶圓2之相互的位置關 係之基板相互位置關係變更機構16。又，批次形成部6具 有批次搬送機構17，該批次搬送機構17係在批次形成部 6與基板處理部7之間接遞藉由批次形成機構15所形成的 批次5，同時在基板處理部7的內部進行批次5的搬送。 再者，批次形成部6具有：檢測收容於載體3之晶圓2的 收容狀態之晶圓收容狀態檢測感應器1 8 ;和進行收容於載 體3之複數片晶圓2之缺口（ notch )的位置調整之缺口 調準部19。 -13- (11) (11)1335637 具體而言，在批次形成部6中，將從載體搬入搬出部 4搬入的複數個（例如兩個）載體3所分別收容的複數片 (例如25片）晶圓2加以組合，藉以形成由應在基板處 理部7施行一次處理的複數片（例如50片）晶圓2所構 成的批次5。接著，在批次形成部6中，將該批次5搬送 至基板處理部7。又，在基板處理部7完成處理後，批次 形成部6從基板處理部7接取批次5，將晶圓2收容於原 本的載體3，然後，將該載體3搬送至載體搬入搬出部4 〇 基板處理部7具有：進行晶圓2之洗淨及乾燥的洗淨 乾燥機構20;和進行晶圓2之洗淨的洗淨機構21。在洗 淨乾燥機構20中，利用昇降機構22使批次5昇降，藉以 進行洗淨及乾燥的基板洗淨乾燥單元23;和進行批次搬送 機構17之洗淨的搬送機構洗淨單元24係並列設置。又， 洗淨機構21具有：用藥液處理批次5的第1〜第3藥液處 理槽25、26、27;和用純水處理批次5的第1〜第3純水 處理槽28、29、30;和在此等第1〜第3藥液處理槽25、 26、27與第1〜第3純水處理槽28、29、30之間，進行 批次5的搬送之第1〜第3搬送裝置31、32、33。 又，上述批次搬送機構17係沿著洗淨乾燥機構20及 洗淨機構21延設於第1圖的左右方向。該批次搬送機構 17的起始端部分係設置於批次形成部6內。 在基板處理部7中，在批次形成部6所形成的批次5 係藉由批次搬送機構17被搬送到洗淨乾燥機構20的昇降(1) (1) 1335637 IX. Inventive Description of the Invention The present invention relates to a substrate supporting device that supports a plurality of substrates in parallel with each other at a specific interval, and a substrate processing unit including the substrate supporting device. And a substrate supporting method for supporting a plurality of substrates to support the substrate holder. [Prior Art] Conventionally, in the manufacturing process of a semiconductor component or a flat panel display, a substrate processing step of performing various processes such as cleaning or drying the semiconductor wafer or the front and back surfaces of the liquid crystal substrate by using a substrate processing apparatus is performed. In the substrate processing apparatus used in the substrate processing step, a single-chip processing chamber substrate processing apparatus that processes the substrates one by one and a batch-processed substrate that processes the plurality of substrates one at a time are known. Processing device. In particular, the purpose of the batch processing type substrate processing apparatus is to shorten the processing time of each of the substrates to achieve an increase in the throughput of the processing steps by processing the plurality of substrates one at a time. Here, in the batch processing type substrate processing apparatus, it is possible to perform one processing for a batch of a substrate composed of, for example, 50 substrates, specifically, a batch for each substrate in the substrate processing step. Various treatments such as washing or drying are performed next. In the above-described batch processing type substrate processing apparatus, it is known that the substrate support member is disposed inside the processing container in a liftable manner, and a nozzle for spraying a treatment agent such as washing water or dry steam is disposed in the processing. The inside of the container, 俾 can be processed in the interior of the processing container at the same time as the structure of the substrate -4- (2) (2) 1335637. In the conventional substrate processing apparatus, a support extending from the lower end portion of the elongated robot arm of the substrate holder in the horizontal direction is provided, and the support system supports the plurality of substrates in parallel with each other at a predetermined interval. Further, in the conventional substrate processing apparatus, the nozzle is attached to the inside of the processing container so as to extend in the front-rear direction (horizontal direction) so as to be parallel to the support of the substrate holder. Further, in the conventional substrate processing apparatus, the processing agent is sprayed from the nozzle toward the plurality of substrates in the processing container, and the surface of each substrate is processed by the processing agent sprayed from the nozzle (for example, refer to Japanese Patent Application No. 11- 1 862 1 2, etc.). However, in the above-described conventional substrate processing apparatus, the plurality of substrates are supported by the support attached to the lower end portion of the elongated robot arm, so that the plurality of substrates supported by the support are closest to the mechanical arm. The portion of the substrate facing the robot arm (the central portion of the substrate) is in a state of being shielded by the robot arm, and the other portions (the left and right portions of the substrate) are not blocked by anything and are exposed. Therefore, in the above-described conventional substrate processing apparatus, the processing unit under the type of the processing agent or the ejection amount ejected from the nozzle is the center portion of the substrate which is in the state of being shielded by the robot arm in the substrate closest to the robot arm, and The left and right portions of the substrate which are not shielded by the robot arm have different flow states of the treatment agent ejected from the nozzles, and thus there is a concern that processing failure may occur. Further, in order to cope with the above problem, it is known that the substrate closest to the robot arm among the plurality of substrates held by the support -5-(3) (3) 1335637 is set as a dummy plate. (For example, refer to Japanese Laid-Open Patent Publication No. Hei 6-84868, etc.). In other words, in the plurality of substrates supported by the support, the second and subsequent substrates from the side of the robot arm are shielded by the substrate (dummy substrate) closest to the robot arm, so that the above-mentioned machine is not received. The influence of the arm. Therefore, in the plurality of substrates supported by the support, the number of the second and subsequent substrates from the side of the robot arm can make the flow state of the treatment agent on the surface of the substrate uniform, and prevent the occurrence of processing defects. Not yet. However, in such a substrate processing method, the dummy substrate must be discarded each time, and the number of substrates supported by the support and performing the desired processing is reduced corresponding to the number of dummy substrates, so there are processing steps. The problem of reduced production. Further, in the treatment method using the dummy substrate, for example, when IPA gas (isopropyl alcohol gas) is used as the treatment agent, the dummy substrate adsorbs approximately the same amount of IPA as the substrate after the second sheet from the side of the robot arm. This will cause the temperature of the dummy substrate to rise sharply. Therefore, when the temperature of the dummy substrate is greatly increased, the IPA becomes difficult to be adsorbed to other substrates in the vicinity of the dummy substrate, and other substrates in the vicinity of the dummy substrate may be defective in handling. In order to solve this problem, it is necessary to supply the IPA gas excessively, and there is a problem that the running cost increases. [Invention] The present invention has been made in consideration of this point, and the object thereof is to provide a usable -6 - (4) (4) 1335637 The shielding surface covers the substrate closest to the robot arm among the plurality of substrates supported by the substrate support, and the flow state of the treatment agent on the surface of the substrate can be made uniform, thereby preventing the occurrence of processing failure In addition, the substrate holder, the substrate processing unit, and the substrate supporting method which can be uniformly processed by a processing agent or the like can be used for all the substrates supported by the substrate holder. The substrate support device according to the present invention is a substrate support device that supports a plurality of substrate substrates in parallel with each other at a specific interval, and is characterized in that: the mechanical arm is extended in the vertical direction to be at least vertically movable in a vertical direction; The support arm is extended from the horizontal direction, and the supporting groove for supporting the substrate is formed at a specific interval along the horizontal direction: a plurality of shielding bodies are provided and supported by the support body. Among the plurality of substrates, the shielding body that is closest to the substrate of the mechanical arm, and the shielding surface formed by the shielding body and the mechanical arm facing the substrate closest to the mechanical arm is the surface of the substrate The substantially identical shape is wider than the surface of the substrate, and is composed of a material having a specific heat greater than the substrate. According to the substrate holder, the shielding body can cover the surface of the plurality of substrates supported by the support on the arm side of the substrate closest to the robot arm, and the flow state of the treatment agent on the substrate surface can be made uniform. The occurrence of processing defects of the substrate closest to the robot arm can be prevented. Further, since the shielding system is composed of a material having a specific heat larger than the substrate, even if an IPA gas (isopropyl alcohol gas) such as a desiccant is used as a treatment agent for treating the substrate, and IP A or the like is adsorbed to the shielding body, the shielding is performed. The temperature of the body will hardly rise. Therefore, even if a sufficient amount of IP A is adsorbed to the substrate in the vicinity of the mask, it is possible to prevent the substrate from being poorly processed. (5) (5) 1335637 At the same time, the amount of use of the IPA gas can be reduced. Here, in the substrate holder, the shielding system is preferably detachable from the robot arm. According to this configuration, the shielding body can be attached to the existing substrate supporting tool, and the workability of the replacement work of the shielding body can be improved. Another substrate supporting device according to the present invention is a substrate supporting device that supports a plurality of substrates in parallel with each other at a specific interval, and is characterized in that: the mechanical arm extends in a vertical direction and is freely movable at least in a vertical direction: a body extending from the robot arm in a horizontal direction, and supporting grooves for supporting the substrate are formed at a plurality of intervals at a specific interval in the horizontal direction, and the mechanical arm has a support supported by the support body a shielding portion of the plurality of substrates that is closest to the substrate facing the robot arm, and the shielding surface of the shielding portion that faces the substrate closest to the robot arm is substantially the same shape or substrate as the surface of the substrate The surface is wider, and the shield portion is made of a material having a specific heat greater than that of the substrate. According to the substrate support device, the shielding portion of the mechanical arm can cover the surface of the plurality of substrates supported by the support body on the arm side of the substrate closest to the mechanical arm, and the flow state of the treatment agent on the surface of the substrate can be made. Homogenization prevents the occurrence of processing defects of the substrate closest to the robot arm. Further, since the shielding portion of the mechanical arm is composed of a material having a specific heat greater than that of the substrate, even a desiccant IPA gas (isopropyl alcohol gas) or the like is used as a treatment agent for processing the substrate, and IPA or the like is adsorbed to the robot arm. When the portion is shielded, the temperature of the shield portion hardly rises. Therefore, even if a sufficient amount of IP A is adsorbed to the substrate adjacent to the shielding portion (6) 1335637 of the robot arm, the substrate can be prevented from being processed without reducing the amount of use of the IPA gas. Further, in each of the substrate holders described above, it is preferable that the synthetic resin is larger than the substrate. In particular, it is more preferably composed of polyetheretherketone (PEEK) or polychlorotrifluoroethylene (ethylene (PTFE) and polyvinylidene fluoride (PVDF). The substrate processing unit of the present invention is characterized in that a plurality of substrates are internally supported by a treatment agent, disposed inside the processing container, supported in parallel with each other at a specific interval, and upper: a mechanical arm extending in a vertical direction to become at least as a support body a plurality of support grooves extending from the mechanical arm to support the substrate in the horizontal direction; and a shielding body disposed to be closest to the mechanical cover in the plurality of substrates to be supported, and The shielding body and the shielding surface of the mechanical arm that opposes the substrate of the robot arm have the same shape or a wider surface than the substrate, and are made of a material. Further, the other substrate processing unit of the present invention The processing container is disposed inside the plurality of substrates; and the substrate supporting member is disposed on the processing of the plurality of substrates to be parallel to each other at a specific interval, and the shielding body can be shielded In the group consisting of specific heat, the above-mentioned shielding system (PCTFE), and polytetrafluoroethylene, there is: a processing container for processing; and a substrate, and the plurality of substrates are formed into a substrate supporting device having a vertical direction in the vertical direction and Providing, at a specific interval, forming a material that is opposed to the substrate by the substrate of the support body and having a heat greater than that of the substrate closest to the upper substrate, and is characterized by: having a treatment agent simultaneously The inside and the support will be supported, and the above substrate -9- • (7) 1335637 support has: a robot arm extending in the vertical direction to become at least vertically liftable; and a support body extending from the above-mentioned mechanical arm Provided in a horizontal direction, and a support groove for supporting the substrate is formed at a plurality of intervals at a specific interval in the horizontal direction, and the mechanical arm has the closest one of the plurality of substrates to be supported by the above-mentioned "support" a shielding portion opposite to the substrate of the robot arm, and the shielding portion of the shielding portion facing the substrate closest to the mechanical arm is formed Surface of the substrate substantially the same shape or φ wider than the surface of the substrate, and the shielding portion formed of a material system is greater than the specific heat of the substrate. According to such a substrate processing unit, since each of the substrate supporting members is provided, the substrate closest to the robot arm among the plurality of substrates supported by the substrate supporting member can be covered by the shielding surface, and the surface of the substrate can be made ' Since the flow state of the agent is uniformized, the occurrence of the processing failure can be prevented, and all the substrates supported by the substrate holder can be uniformly processed by a treatment agent or the like. The substrate supporting method of the present invention is a substrate supporting method in which a plurality of substrate substrates are parallel to each other at a specific interval by a substrate supporting member, and is characterized in that it has the following steps: preparing to have: a mechanical arm extending in a vertical direction to become at least And the support body is disposed from the above-mentioned mechanical arm extending in the horizontal direction, and the supporting groove for supporting the substrate is formed at a plurality of intervals at a specific interval in the horizontal direction; and the shielding body is set And a shielding body facing the substrate closest to the mechanical arm among the plurality of substrates supported by the support, and the substrate formed by the shielding body and the mechanical arm and closest to the mechanical arm Shielding of the opposite direction - (8) (8) 1335637 The surface is a step substantially the same as the surface of the substrate or wider than the surface of the substrate, and a substrate support member composed of a material having a specific heat greater than the substrate; And the support body for supporting the plurality of substrate substrates on the substrate support device, and the closest to the plurality of substrates supported by the support body at this time Masking said back surface of the substrate body of the shield facing the step. Another substrate supporting method according to the present invention is a substrate supporting method in which a plurality of substrate substrates are parallel to each other at a predetermined interval by a substrate supporting tool, and is characterized in that it has a step of: providing a mechanical arm extending in a vertical direction and becoming And at least in the vertical direction; and the support body is disposed from the mechanical arm extending in the horizontal direction, and the supporting groove for supporting the substrate is formed at a plurality of intervals at a specific interval in the horizontal direction, and the mechanical arm has The shielding portion of the plurality of substrates supported by the support body that is closest to the substrate of the mechanical arm, and the shielding surface of the shielding portion that faces the substrate closest to the mechanical arm is a substrate a surface having substantially the same shape or a wider surface than the substrate, wherein the shielding portion is a substrate support member composed of a material having a specific heat greater than the substrate; and the plurality of substrate supports the support member of the substrate support member At this time, the plurality of substrates supported by the support body are closest to the shielding of the mechanical arm Per step of the back surface of the substrate facing the shielding portion. According to such a substrate supporting method, since the substrate closest to the shielding portion of the shielding body or the mechanical arm among the plurality of substrates supported by the support has a back surface facing the shielding portion of the shielding body or the robot arm, the substrate is The surface of the surface to be treated has no shielding portion facing the shield or the robot arm. Therefore, the treatment of the substrate surface closest to the shielding portion (9) (9) 1335637 of the shielding body or the robot arm can be made uniform with the processing for the other substrate surface. Further, in the above-described substrate supporting method, when the plurality of substrates are supported by the support of the substrate holder, the substrates are supported so that the surfaces of the two substrates embedded in the adjacent support grooves face each other or the back surface thereof It is preferable to use the above support. According to such a substrate supporting method, for each substrate supported by the support, the surfaces of the processed surfaces can be opposed to each other, and the substrate closest to the shielding portion of the shielding body or the robot arm is also adjacent to the other adjacent substrates. The surfaces are opposed to each other, so that the treatment of the surfaces of all the substrates can be made uniform. [Embodiment] Hereinafter, a specific configuration of a substrate processing apparatus including a substrate processing unit (substrate cleaning and drying unit) having the substrate supporting device of the present invention will be described with reference to the drawings. In the following description, a case where the present invention is applied to a substrate processing apparatus which dries a semiconductor substrate (wafer) and is dried is described as an example. As shown in FIG. 1, the substrate processing apparatus 1 includes a carrier loading/unloading unit 4 that carries in and out a carrier 3 for accommodating a plurality of wafers 2 (substrate), and a carrier carrying/loading unit 4 that is housed in a plurality of carriers 3 in combination The wafer 2 is formed into a batch forming unit 6 for processing a batch 5; and a substrate processing unit 进行 for performing the cleaning and drying processing of the wafer 2 for each batch 5. The carrier loading/unloading unit 4 has a carrier stage 8 on which the carrier 3 is placed, and a hermetic opening and closing door 9 -12-(10) (10) 1335637 formed on the carrier platform 8. A carrier transport mechanism 10 is disposed inside the switch door 9. When the wafer 2 is carried in, the carrier transport mechanism 10 can be used, and the carrier 3 placed on the carrier platform 8 can be temporarily stored in the carrier stock 11 as needed, and the carrier 3 can be transported to the carrier mounting table 12. Further, in the carrier loading/unloading unit 4, the carrier 3 in which the wafer 2 that has been subjected to the series processing in the substrate processing unit 7 is housed is reversed, and the carrier 3 placed on the carrier mounting table 12 is reversed by the loading. The carrier transport mechanism 1 is temporarily stored in the carrier storage unit 11 as needed, and the carrier 3 is transported to the carrier platform 8. In the batch forming unit 6, a closed switch door 13 is formed between the batch forming unit 6 and the carrier loading/unloading unit 4. The batch forming unit 6 has a substrate transfer mechanism 14 for transporting a plurality of wafers 2 accommodated in the carrier 3 at the same time inside the switch gate 13; and transporting the substrate transfer mechanism 14 to the inside. The arrangement interval of the wafer W is changed to half, and the batch forming mechanism 15 of the lot 5 is formed from the wafer 2; and the positional relationship between the plurality of wafers 2 transferred by the substrate transfer mechanism 14 is changed. The substrate mutual position changing mechanism 16 is provided. Further, the lot forming unit 6 has a batch transport mechanism 17 that delivers the lot 5 formed by the batch forming mechanism 15 between the batch forming unit 6 and the substrate processing unit 7 while The batch 5 is transported inside the substrate processing unit 7. Further, the batch forming unit 6 has a wafer storage state detecting sensor 18 for detecting the storage state of the wafer 2 accommodated in the carrier 3, and a notch for performing the plurality of wafers 2 accommodated in the carrier 3. The position adjustment of the gap adjustment unit 19. -13- (11) (11) 1335637 Specifically, in the batch forming unit 6, a plurality of (for example, two) carriers (for example, two) that are carried in a plurality of (for example, two) carriers 3 carried in from the carrier loading/unloading unit 4 (for example, 25 pieces) The wafers 2 are combined to form a batch 5 composed of a plurality of wafers (for example, 50 wafers) 2 to be subjected to primary processing in the substrate processing portion 7. Next, in the batch forming unit 6, the lot 5 is transferred to the substrate processing unit 7. After the substrate processing unit 7 completes the processing, the batch forming unit 6 picks up the batch 5 from the substrate processing unit 7, stores the wafer 2 in the original carrier 3, and then transports the carrier 3 to the carrier loading/unloading unit. The 〇 substrate processing unit 7 includes a cleaning and drying mechanism 20 that performs cleaning and drying of the wafer 2, and a cleaning mechanism 21 that performs cleaning of the wafer 2. In the washing and drying mechanism 20, the substrate 5 is lifted and lowered by the elevating mechanism 22, and the substrate cleaning and drying unit 23 for washing and drying is performed; and the transport mechanism cleaning unit 24 for cleaning the batch transport mechanism 17 is used. Parallel settings. Further, the cleaning mechanism 21 includes first to third chemical liquid processing tanks 25, 26, and 27 for the chemical liquid processing batch 5, and first to third pure water treatment tanks 28 for treating the batch 5 with pure water. 29, 30; and the first to the fifth batch transfer between the first to third chemical liquid processing tanks 25, 26, and 27 and the first to third pure water treatment tanks 28, 29, and 30. The third transfer devices 31, 32, and 33. Further, the above-described batch transfer mechanism 17 is extended in the left-right direction of Fig. 1 along the washing and drying mechanism 20 and the cleaning mechanism 21. The starting end portion of the batch conveying mechanism 17 is disposed in the batch forming portion 6. In the substrate processing unit 7, the lot 5 formed in the batch forming unit 6 is transported to the washing and drying mechanism 20 by the batch conveying mechanism 17.
S -14- (12) (12)1335637 機構22或洗淨機構2Ί的第1〜第3搬送裝置31、32、33 。接著，在各洗淨乾燥機構20或洗淨機構21中，按每個 批次5進行晶圓2的處理，然後，將處理後的批次5從洗 淨乾燥機構20的昇降機構22或洗淨機構21的第1〜第3 搬送裝置31、32、33移送到批次搬送機構17，並利用該 批次搬送機構17將處理後的批次5再次搬送到批次形成 部6。 如上所述，在基板處理裝置1中，利用載體搬入搬出 部4將晶圓2按照每個載體3搬入批次形成部6，然後， 在批次形成部6形成一次處理用的批次5而遞送到基板處 理部7，在基板處理部7按每個批次5 —次對晶圓2實施 處理。在該基板處理裝置1中，接著，將處理後的批次5 再次遞送到批次形成部6，在批次形成部6將構成批次5 的晶圓2再次收容於載體3而搬送至載體搬入搬出部4， 藉由載體搬入搬出部4將收容有處理後之晶圓2的載體3 搬出。 繼之，說明成爲本發明之主要部位之基板洗淨乾燥單 元（基板處理單元）23的構成。 如第2圖〜第4圖所示，基板洗淨乾燥單元23係將 ，用以將晶圓2按每個批次5予以洗淨的洗淨單元34;和 用以使晶圓2按每個批次5予以乾燥的乾燥單元35上下 一體連設所構成。並且，在此等洗淨單元34及乾燥單元 35的內部，用以將晶圓2按每個批次5進行昇降搬送的基 板支持具36係可昇降自如地配設於這兩個單元34、35間 -15- (13) (13)1335637 ο * 首先，說明基板支持具36的具體構造時，基板支持 具36係如第5圖〜第7圖所不那樣具有：延伸於上下方 向的機械臂37;和在該機械臂37的前側下端部延伸於前 後方向（第6圖的左右方向）的四條支持體38、39、40、 41。各支持體38、39、40、41係於左右保持間隔平行地 安裝。接著，如第5圖所示，將連結體42架設於左側的 兩條支持體38、39的前端部間，同時將連結體43架設於 右側的兩條支持體4 0、4 1的前端部間。 又，在基板支持具36中，用以將晶圓2 —片一片呈 垂直狀支持的支持溝44、45、46、47係於前後保持一定 間隔地形成於各支持體38、39、40、41的上端部。在此 種基板支持具36中，藉由用各支持溝44、45、46、47支 持晶圓2，可將複數片的晶圓2於前後保持一定間隔地平 行支持。又，機械臂37係與昇降機構22連動連結，藉由 昇降機構22可使晶圓2按每個批次昇降於洗淨單元34與 乾燥單元35之間。此外，昇降機構22係與控制部48連 接，藉由該控制部48可驅動控制昇降機構22。 而且，基板支持具36係藉由上下一對連結具50、51 將大致半圓板狀的遮蔽體49可裝卸自如地安裝於機械臂 37的前面（第6圖的左側），即，在與由支持體38、39 、40、41所支持之複數片晶圓2中最接近於機械臂37之 晶圓2對向的面。該遮蔽體49係由比熱大於晶圓2的材 料例如對藥液或有機溶劑具有抗藥性、耐熱性及機械性強 -16- (14) 1335637 度的石英、合成石英 < 合成樹脂所構成。尤其，遮蔽體49 係以由聚醚醚酮（PEEK)、聚三氟氯乙烯（PCTFE)、聚 四氟乙烯（PTFE )及聚偏氟乙烯（PVDF )所構成的群組 * _ 中至少任一者的合成樹脂所構成爲佳。 ' 藉由設置此種遮蔽體49，基板支持具36在機械臂37 與晶圓2之間形成有與晶圓2對向以覆蓋該晶圓2的表面 之遮蔽面52。該遮蔽面52係藉由機械臂37的下端前面 φ 53與遮蔽體49的前面54而與晶圓2的表面大致同一形狀 。該遮蔽面52是用來遮蔽處理劑從機械臂37的左右側方 朝向複數片晶圓2中最接近於機械臂37之晶圓2的表面 流入。因此，該遮蔽面52具有使最接近於機械臂37之晶 圓2表面之處理劑的流動狀態，成爲與其他晶圓2同樣狀 ' 態的功能。此外，由機械臂37的下端前面53與遮蔽體49 的前面54所形成的遮蔽面52亦可變得比晶圓2的表面更 廣。 • 繼之，說明洗淨單元34的具體構造。洗淨單元34具 有：上端部形成開口的有底矩形箱型洗淨處理容器55;和 安裝於該洗淨處理容器55之左右側壁56、57之用以噴射 供給洗淨液的洗淨液供給噴嘴58、59。又’在洗淨處理容 器55的底壁60連通連結有排水管61，且在該排水管61 的中途部介設有開關閥62。更且，在洗淨處理容器55的 上端外側部安裝有環狀溢流槽63，且在該溢流槽63的底 壁64連通連結有排水管65，在該排水管65的中途部介設 有開關閥66 -17- (15) (15)1335637 在此，用以供給純水的純水供給源67和用以供給藥 液的藥液供給源68，係經由三方管69連接於洗淨液供給 噴嘴58、59。藉由切換該三方管69，可將純水或藥液選 擇性地從洗淨液供給噴嘴58、59供給至洗淨處理容器55 的內部。又，在開關閥62、66或三方管69係與控制部48 連接，藉由該控制部48可驅動控制開關閥62、66或三方 管6 9。 繼之，說明乾燥單元35的具體構造時，乾燥單元35 具有下端部形成開口的大致箱型乾燥處理容器70。在該乾 燥處理容器70的下方，配設有閘板（shutter)機構71。 該閘板71具有形成於外殼（casing) 72之左側部的閘板 收容部73，得以將閘板（shutter ) 74以可開關自如的方 式收容於該閘板收容部73。 於此，在閘板機構71中，閘板74係與開關機構75 連動連結，而該開關機構75係連接於控制部48。藉由該 控制部48得以驅動控制開關機構75。 又，在乾燥單元35中，乾燥處理容器70的上部係形 成半圓弧剖圓狀，同時形成有用以使基板支持具36之機 械臂37插通於上端部的貫通孔76。在該貫通孔76安裝有 襯墊（packing) 77。因此，乾燥處理容器70即便在使機 械臂3 7插通的狀態也可保持氣密狀態。 在此，乾燥處理容器70係連動連結有昇降機構78， 且該昇降機構78係連接於控制部48。並且，藉由該控制 部48得以驅動控制昇降機構78。藉由昇降機構78使乾燥 -18- (16) (16)1335637 處理容器70下降時，·形成於乾燥處理容器70之下端部的 凸緣79會密接於閘板機構71的閘板74。 此外，在乾燥單元35中，於乾燥處理容器70的內側 上部，安裝有用以將乾燥氣體（例如異丙醇氣體： isopropyl alcohol gas等）與載體氣體（氮氣等）一起噴 射供給的左右一對乾燥蒸氣供給噴嘴8 0、8 1 用以朝內側上部吐出乾燥蒸氣的氣體吐出口 82、83 係於前後保持間隔地形成於該乾燥蒸氣供給噴嘴8 0、8 1。 在此，用以將乾燥蒸氣與載體氣體一起供給的乾燥蒸 氣供給源8 4，係經由開關閥8 5連接於該乾燥蒸氣供給噴 嘴80、81。於是，藉由使開關閥85成爲打開的狀態，可 將IP A氣體與載體氣體一起從乾燥蒸氣供給噴嘴80、81 供給到乾燥處理容器70的內部。又，開關閥85係與控制 部4 8連接，藉由該控制部4 8可驅動控制開關閥8 5。 在上述構成的基板洗淨乾燥單元23中，藉由基板搬 送具36將晶圓2按每個批次5於洗淨單元34與乾燥單元 35之間進行昇降搬送，所以在洗淨單元34之洗淨處理容 器55內的後方部分與乾燥單元35之乾燥處理容器70內 的後方部分，形成有用以使基板支持具36之機械臂37昇 降之必要的昇降空間8 6。 在上述基板洗淨乾燥單元23中，爲了能夠將基板支 持具36所支持的複數片晶圓2全部良好地進行洗淨·乾 燥處理，所以在洗淨處理容器55的內部，係使洗淨液供 給噴嘴58、59於延伸至機械臂37側邊之昇降空間86爲 (S ) -19- (17) 1335637 止的狀態下配設。又·，在乾燥處理空間70的內部， 乾燥蒸氣供給噴嘴80、81於延伸至機械臂37側邊之 空間8 6爲止的狀態下而配設。 如上所述，使洗淨液供給噴嘴58、59或乾燥蒸 給噴嘴80、81延伸至機械臂37側邊的昇降空間86 洗淨液或乾燥蒸氣等的處理劑會從機械臂37的側邊 向藉由支持體38、39、40、41所支持之複數片晶圓 最接近於機械臂37之晶圓2的表面流入，並對該最 於機械臂3 7之晶圓2的表面供給比其他晶圓2更多 理劑。然而，在上述基板洗淨乾燥單元23中，由於 板支持具36之機械臂37的前面，即，在與藉由支持 、39、40、41所支持之複數片晶圓2中最接近於機 37的晶圓2對向的面，利用遮蔽體49形成有遮蔽面 所以藉由該遮蔽面52得以遮蔽處理劑從機械臂37的 側邊流入最接近於機械臂3 7之晶圓2的表面，以使 近於機械臂3 7之晶圓2表面的處理劑的流動狀態成 其他的晶圓2同樣的狀態。 此外，亦可在洗淨液供給噴嘴58、59，設置用以 洗淨液等處理劑之溫度控制的加熱器（沒有顯示圖） 熱器之接液部（與處理劑連接的部分）、支持體38、 40、41、機械臂37或洗淨液乾燥容器55或乾燥處理 70，爲了降低其金屬雜質，亦可由合成石英所構成。 如上所述，在上述基板洗淨乾燥單元23中，可 蔽面52覆蓋藉由基板支持具36所支持之複數片晶圓 係使 昇降 氣供 時， ，朝 2中 接近 的處 在基 體38 械臂 52， 左右 最接 爲與 進行 。加 39、 容器 用遮 2中 -20- (18) 1335637 最接近於機械臂37的‘晶圓2，故可使晶圓2表面之處理劑 的流動狀態均勻化，以將處理不良的發生防範於未然。 尤其，在上述基板洗淨乾燥單元23中，係將遮蔽面 52形成與晶圓2的表面大致相同的形狀，故可使藉由基板 ' 支持具36所支持之複數片晶圓2中最接近於機械臂37的 晶圓2與其他晶圓2之表面之處理劑的流動狀態均勻化， 且可均勻地處理複數片晶圓2。 φ 又，在上述基板洗淨乾燥單元23中，藉由將遮蔽體 49裝卸自如地設置於基板支持具36，而形成遮蔽面52, 所以可將遮蔽體49附設於既有的基板處理裝置1，同時可 使遮蔽體49之更換作業的作業性提升。 基板洗淨乾燥單元23係以上述說明的方式構成，可 ' 藉由控制部48予以驅動控制。此外，該控制部48不僅可 驅動控制基板洗淨乾燥單元23，亦可驅動控制基板處理裝 置1的各部位。 φ 藉由控制部48驅動控制基板洗淨乾燥單元23，可持 續進行晶圓2的洗淨處理與乾燥處理。 首先，控制部48係進行基板洗淨乾燥單元23的初期 設定。 具體來說，控制部48係如第8圖（a )所示那樣使洗 淨處理容器55的開關閥62與溢流槽63的開關閥66成爲 閉塞狀態，同時使用開關機構75以使閘板74成爲打開的 狀態。接著，控制部48係使用昇降機構22將基板支持具 36保持間隔地配置於閘板機構71的上方，且使用昇降機 -21 - (19) 1335637 構78將乾燥處理容器’70保持間隔地配置於基板支持 的上方。然後，控制部48驅動控制三方管69，將斜 純水供給源67經由洗淨液供給噴嘴58、59供給到沒 理容器55的內部。此時，控制部48使溢流槽63的 閥66成爲打開狀態，可將溢流的純水從洗淨處理容 排出。 繼之，如第8圖（b )所示，控制部48驅動控制 搬送機構17，且使構成藉由該批次搬送機構17所搬 批次5的各晶圓2，嵌入形成於基扳支持具36之支 38〜41的支持溝44〜47。藉此方式，各晶圓2被支 支持體38〜41。在此，使複數片的晶圓2支持於支 38〜41時，以嵌入相鄰之支持溝44〜47之兩片晶圓 表面彼此或背面彼此相對的方式，使各晶圓2支持於 體38〜41。再者，以被支持於各支持體38〜41的複 晶圓2中，最接近於遮蔽體49之晶圓2的背面面向 體49的方式，將晶圓2嵌入支持溝44〜48。 繼之，控制部4 8將載置於基板支持具3 6的晶圓 漬於洗淨處理容器55的內部所儲存的純水，以進行 處理的準備。 具體而言，控制部48係如第9圖（a )所示那樣 用昇降機構22使基板支持具36下降至洗淨處理容| 的內部，藉以使載置於基板支持具36的晶圓2浸漬 淨處理容器55的內部所儲存的純水。 接著，控制部48係在洗淨處理容器55的內部進 具36 水從 淨處 開關 器55 批次 送之 持體 持於 持體 2的 支持 數片 遮蔽 2浸 洗淨 ，使 I 55 於洗 行晶 -22- (20) (20)1335637 圓2的洗淨處理。 具體而言，控制部48係在使洗淨處理容器55的開關 閥62成爲閉塞狀態，同時使溢流槽63的開關閥66成爲 打開的狀態下，驅動控制三方管69以將藥液（洗淨液） 從藥液供給源68經由洗淨液供給噴嘴58、59供給到洗淨 處理容器55的內部。依此，純水會從洗淨處理容器55緩 緩地溢到湓流槽63，最後變成在洗淨處理容器55的內部 儲存有藥液的狀態。其後，利用藥液將儲存於浸漬於洗淨 處理容器55內部之藥液的晶圓2施行洗淨處理（藥液洗 淨處理）。然後，控制部4 8係在使洗淨處理容器5 5的開 關閥62成爲閉塞狀態，同時使溢流槽63的開關閥66成 爲打開的狀態下，驅動控制三方管69以將純水（洗淨液 )從純水供給源67經由洗淨液供給噴嘴58、59供給到洗 淨處理容器55的內部。藉此方式，藥液會從洗淨處理容 器55緩緩地溢到溢流槽63，最後變成在洗淨處理容器55 的內部儲存有純水的狀態。接著，藉由純水將浸漬於儲存 於洗淨處理容器55內部之純水的晶圓2實施洗淨處理（ 沖洗處理）。 繼之，控制部48使載置於基板支持具36的晶圓2從 洗淨處理容器55內部的位置上昇至乾燥處理容器70內部 的位置》 具體來說，控制部48係如第9圖（b)所示那樣，使 用昇降機構78使乾燥處理容器70下降至閘板機構71之 正上方的位置，同時使用昇降機構22使基板支持具36從 -23- (21) 1335637 洗淨處理容器55內部的位置，上昇至乾燥處理容器7〇 部的位置，藉以將載置於基板支持具36的晶圓2搬送 乾燥處理容器70的內部。 然後，控制部48係藉由閘板機構71的閘板74閉 乾燥處理容器70的下端開口部。 具體而言，控制部4 8係如第1 〇圖（a )所示那樣 使用開關機構75閉塞閘板機構7 1的閘板74，且使該閘 74密接於乾燥處理容器70的下端開口部。 繼之，控制部48將乾燥蒸氣與載體氣體一起以特 時間供給到乾燥處理容器70的內部。 具體而言，控制部4 8係使開關閥8 5成爲打開的狀 。因此，特定溫度的乾燥蒸氣（IP A氣體）可與載體氣 一起從乾燥蒸氣供給源84，經由乾燥蒸氣供給噴嘴80 81的氣體吐出口 82、83供給到乾燥處理容器70的內部 此時，由於在基板洗淨乾燥單元23中，於基板支 具36之機械臂37的前面，即，在與藉由支持體38、39 40、41所支持之複數片晶圓2中最接近於機械臂37之 圓2對向的面，形成有遮蔽面52，所以藉由該遮蔽面 得以遮蔽乾燥氣體從機械臂3 7的左右側邊流入最接近 機械臂37之晶圓2的表面，以使最接近於機械臂37之 圓2表面的乾燥蒸氣的流動狀態成爲與其他的晶圓2同 的狀態。 因此，在上述基板洗淨乾燥單元23中，可用遮蔽 52覆蓋藉由基板支持具36所支持之複數片晶圓2中最 內 到 塞 板 定 態 體 持 > 晶 52 於 晶 樣 面 接 -24- (22) (22)1335637 近於機械臂37的晶圓‘2，故可使晶圓2表面之乾燥蒸氣的 流動狀態均勻化，以將處理不良的發生防範於未然。 而且，由於遮蔽體49係由比熱大於晶圓2的材料所 構成，所以即使如上所述使用IPA氣體等作爲對晶圓2施 行處理的處理劑，且IPA等吸附於遮蔽體49時，該晶圓 2的溫度也幾乎不會上昇。因此，即使充分量的IPA被吸 附於遮蔽體49附近的晶圓2，也可防止該晶圓2發生處理 不良的情形，同時也可使IPA氣體的使用量減少。 又，如上所述，使複數片晶圓2支持於基板支持具36 的支持體38、39、40、41時，由於支持於支持體38、39 、40、41之複數片晶圓2中最接近於遮蔽體49之晶圓2 的背面係面向遮蔽體49，所以在該晶圓2中進行洗淨處理 或乾燥處理之面的表面並沒有面向遮蔽體49。因此，可將 對於最接近於遮蔽體49之晶圓2之表面的處理，與對於 其他晶圓2之表面的處理均勻化。再者，因爲以嵌入相鄰 之支持溝44、45、46、47的兩片晶圓2的表面彼此或背 面彼此相對的方式，使各晶圓2支持於上述支持體38、39 、40、41，所以就支持於支持體38、39、40、41的各晶 圓2來說’可使其進行處理之面的表面彼此相對，所以可 使對於所有的晶圓2之表面的洗淨處理或乾燥處理均勻化 〇 最後’如第1 0圖（b )所示那樣，控制部4 8係藉由 昇降機構78使乾燥處理容器70上昇，同時藉由批次搬送 機構17從基板支持具36接取晶圓2。以此方式，結束控 -25- (23) (23)1335637 制部48對基板洗淨乾‘燥單元23之一連串的處理。 此外，本發明之基板支持具或基板處理乾燥單元（基 板處理單元）並不限定於上述的樣態，亦可施加各種的變 更。 例如，上述的基板洗淨乾燥單元23中，係在基板支 持具36的機械臂37與晶圓2之間形成有遮蔽面52，但是 並不限定於此，只要可藉由遮蔽面52遮蔽處理劑從機械 臂3 7側朝向晶圓2的表面流動即可，亦可在洗淨處理容 器55或乾燥處理容器70的內部沒有配設晶圓2的空間， 以與機械臂37側之晶圓2對向的方式形成遮蔽面52。具 體來說，例如亦可在基板支持具36之機械臂37的前方或 後方形成遮蔽面52，又，亦可在洗淨處理容器55或乾燥 處理容器70設置具有遮蔽面52的遮蔽體。 又，基板支持具36之機械臂37的本體亦可形成相對 於晶圓2的遮蔽面52，以取代在基板支持具36設置遮蔽 體49。以下，使用第11圖至第13圖說明此例。第11圖 係表示機械臂3 7本體形成相對於晶圓2之遮蔽面5 2的基 板支持具36之正面圖，第12圖係第11圖所示之基板支 持具3 6的側面圖，第13圖係第1 1圖所示之基板支持具 36的平面圖。 如第Π圖等所示，機械臂37係包含有與應藉由支持 體38、39、40、41所支持之複數片晶圓2中最接近於機 械臂37之晶圓2對向的遮蔽部分3 7a。該遮蔽部分3 7a中 與晶圓2對向的遮蔽面，係成爲與晶圓2的表面大致相同 -26- (24) (24)1335637 形狀或比晶圓2的表面更廣。又，遮蔽部分37a係由比熱 大於晶圓2的材料所構成，具體來說，係由例如聚三氟氯 乙烯（PCTFE )所構成。此外，如上所述，亦可在第η 圖至第13圖所示的基板支持具36，設置第5圖等所示之 可裝卸自如的遮蔽體49。 根據此種基板支持具36，可用機械臂37的遮蔽部分 37a覆蓋藉由支持體38、39、40、41所支持之複數片晶圓 2中最接近於機械臂37之晶圓2面向機械臂37側的表面 。因此，可使晶圓2之表面之處理劑的流動狀態均勻化， 可將最接近於該機械臂37之晶圓2之處理不良的發生防 範於未然。而且，由於機械臂37的遮蔽部分3 7a係由比 熱大於晶圓2的材料所構成，所以即使使用乾燥劑之IP A 氣體（異丙醇氣體）等作爲對晶圓2進行處理的處理劑， 且IPA等被吸附於機械臂37的遮蔽部分37a時，該遮蔽 部分3 7a的溫度也幾乎不會上昇。因此，即使充分量的 IPA被吸附於機械臂37之遮蔽部分37a附近的晶圓2，也 可防止該晶圓2發生處理不良的情形，同時可使IPA氣體 的使用量減少。 〔實施例〕 繼之，說明第5圖至第7圖所示之基板支持具36的 —實施例。又，說明第5圖至第7圖所示之基板支持具36 中未安裝遮蔽體49時的比較例，作爲比較的對象。 -27- (25) (25)1335637 〔本實施例〕 ’ 準備第5圖至第7圖所示的基板支持具36。基板支持 具36係如第5圖〜第7圖所示那樣具有：延伸於上下方 向的機械臂37;和在該機械臂37的前側下端部延伸於前 後方向（第6圖的左右方向）的四條支持體38、39、40、 41。又，用以將晶圓2 —片一片呈垂直狀支持的支持溝44 、45、46、47係於前後保持一定間隔地形成於各支持體 38、39、40、41的上端部。在此種基板支持具36中，藉 由用各支持溝44、45、46、47支持晶圓2，可將複數片的 晶圓2於前後保持一定間隔地平行地支持。 而且，在基板支持具36之機械臂37的前面（第6圖 的左側），即，在與藉由支持體38、39、40、41所支持 之複數片晶圓2中最接近於機械臂37之晶圓2對向的面 上，利用上下一對連結具50、51將大致半圓板狀的遮蔽 體49可裝卸自如地安裝於其上。該遮蔽體49係由比熱大 於晶圓2的材料之聚醚醚酮（PEEK )的合成樹脂所構成 。藉由設置此種遮蔽體49，基板支持具36在機械臂37與 晶圓2之間，形成與晶圓2對向以覆蓋該晶圓2之表面的 遮蔽面52。該遮蔽面52係藉由機械臂37的下端前面53 與遮蔽體49的前面54，形成與晶圓2的表面大致相同的 形狀。 本實施例中，使複數片晶圓2支持於支持體38〜41 時，以嵌入相鄰之支持溝44〜47之兩片晶圓2的表面彼 此或背面彼此相對的方式，使各晶圓2支持於支持體38〜 -28- (26) (26)1335637 41»再者，以被支持於各支持體38〜41的複數片晶圓2 中，最接近於遮蔽體49之晶圓2的背面面向遮蔽體49的 方式，進行晶圓2對支持溝44〜47的嵌入。 使用此種基板支持具36，利用洗淨單元34將被支持 於該基板支持具36的複數片晶圓2同時予以洗淨，然後 ，利用乾燥單元35將此等複數片晶圓2藉由IPA氣體同 時予以乾燥。乾燥後，計算藉由支持體38、39、40、41 所支持之複數片晶圓2中最接近於機械臂3 7之晶圓2表 面所形成之水印（water mark )的數量。所算得的水印的 數量爲4個。 〔比較例〕 在比較例中，準備在第5圖至第7圖所示之基板支持 具36中卸除遮蔽體49的構成。使用卸除此種遮蔽體49 的基板支持具，與本實施例之情形同樣地，利用洗淨單元 34將複數片晶圓2同時予以洗淨，然後，利用乾燥單元 35將複數片晶圓2藉由IP A氣體同時予以乾燥。乾燥後 ，計算藉由支持體38、39、40、41所支持之複數片晶圓2 中最接近於機械臂37之晶圓2表面所形成之水印的數量 。所算得的水印的數量爲1 75個。在晶圓2的表面中沒有 被機械臂3 7遮蔽之狀態的左右部分，水印形成特別多。 〔關於實驗結果〕 如上所述，獲知藉由將遮蔽體49設置於基板支持具 -29- (27) 1335637 36，對最接近於機械臂37的晶圓2形成遮蔽面52時，與 沒有設置遮蔽體49時相比較，可使形成於晶圓2之表面 之水印的數量大幅減少。亦即，獲知與比較例的基板支持 具相比較，根據本實施例的基板支持具36，因爲可用遮蔽 體49覆蓋藉由支持體38、39、40、41所支持之複數片晶 圓2中最接近於機械臂37之晶圓2面向機械臂37側的表 面，所以可使晶圓2表面之IPA氣體的流動狀態均勻化， φ 且可將最接近於該機械臂37之晶圓2之處理不良的發生 防範於未然。更且，獲知因爲遮蔽體49係由比熱大於晶 圓2的材料之聚醚醚酮（PEEK)的合成樹脂所構成，所 以IPA等不會被吸附於遮蔽體49，且該遮蔽體49的溫度 幾乎不會上昇，即使充分量的IPA被吸附於遮蔽體49附 近的晶圓2，也可防止該晶圓2產生處理不良的情形。 【圖式簡單說明】 φ 第1圖係表示本發明之基板處理裝置的平面圖。 第2圖係表示第1圖之基板處理裝置之基板洗淨乾燥 單元的方塊圖。 第3圖係第2圖所示之基板洗淨乾燥單元的正面剖面 圖。 第4圖係第2圖所示之基板洗淨乾燥單元的側面剖面 圖。 第5圖係表示設置於第2圖所示之基板洗淨乾燥單元 之基板支持具的正面圖。 (28) 1335637 第6圖係第5圖所示之基板支持具的側面圖。 第7圖係第5圖所示之基板支持具的平面圖。 第8圖係第2圖所示之基板洗淨乾燥單元的動作說明 圖，表示洗淨準備時的動作之說明圖。 ' 第9圖係第2圖所示之基板洗淨乾燥單元的動作說明 圖，表示洗淨處理時的動作之說明圖。 第10圖係第2圖所示之基板洗淨乾燥單元的動作說 φ 明圖，表示乾燥 處理時的動作之說明圖。 第11圖係表示設置於第2圖所示之基板洗淨乾燥單 元之其他構成的基板支持具之正面圖。 第12圖係第11圖所示之其他構成之基板支持具的側 面圖。 第13圖係第11圖所示之其他構成之基板支持具的平 面圖。 【主要元件符號說明】 — 1 :基板處理裝置 2 :晶圓 3 :載體 4:載體搬入搬出部 5 :批次 6 :批次形成部 7 :基板處理部 -31 - (29) 1335637 8 :載體平台 9、1 3 :開關門 10 =載體搬送機構 1 1 :載體儲存部 ' 12 :載體載置台 14 :基板搬送機構 1 5 :批次形成機構 φ 1 6 :基板相互位置關係變更機構 1 7 :批次搬送機構 1 8 :晶圓收容狀態檢測感應器 19 :缺口調準部 20 :洗淨乾燥機構 2 1 :洗淨機構 22 :昇降機構 23:基板洗淨乾燥單元 φ 24:搬送機構洗淨單元 3 4 :洗淨單元 3 5 :乾燥單元 3 6 :基板支持具 37 :機械臂 38、39、40、41 :支持體 44、 45、 46、 47:支持溝 49 :遮蔽體 -32-S - 14 - (12) (12) 1335637 The first to third conveying devices 31, 32, and 33 of the mechanism 22 or the cleaning mechanism 2A. Next, in each of the washing and drying mechanisms 20 or the cleaning mechanism 21, the processing of the wafer 2 is performed for each batch 5, and then the processed batch 5 is washed from the elevating mechanism 22 of the washing and drying mechanism 20 or washed. The first to third conveying devices 31, 32, and 33 of the cleaning mechanism 21 are transferred to the batch conveying mechanism 17, and the processed batch 5 is again transported to the batch forming portion 6 by the batch conveying mechanism 17. As described above, in the substrate processing apparatus 1, the wafer 2 is carried into the batch forming unit 6 for each carrier 3 by the carrier loading/unloading unit 4, and then the batch 5 for the primary processing is formed in the batch forming unit 6. The substrate processing unit 7 is delivered to the substrate processing unit 7, and the wafer processing unit 7 performs processing on the wafer 2 for each batch. In the substrate processing apparatus 1, the processed batch 5 is again delivered to the batch forming unit 6, and the wafer 2 constituting the lot 5 is again stored in the carrier 3 in the batch forming unit 6 and transported to the carrier. The loading/unloading unit 4 carries out the carrier 3 in which the processed wafer 2 is stored by the carrier loading/unloading unit 4. Next, the configuration of the substrate cleaning and drying unit (substrate processing unit) 23 which is the main part of the present invention will be described. As shown in FIG. 2 to FIG. 4, the substrate cleaning and drying unit 23 is a cleaning unit 34 for cleaning the wafer 2 for each batch 5; and for making the wafer 2 per The drying unit 35 in which the batches 5 are dried is integrally connected up and down. Further, in the cleaning unit 34 and the drying unit 35, the substrate holder 36 for lifting and transporting the wafer 2 for each batch 5 is disposed in the two units 34 so as to be movable up and down. 35 -15- (13) (13) 1335637 ο * First, when the specific structure of the substrate holder 36 is described, the substrate holder 36 has a mechanism extending in the vertical direction as in the fifth to seventh embodiments. The arm 37; and the four support bodies 38, 39, 40, and 41 extending in the front-rear direction (the horizontal direction of FIG. 6) at the front lower end portion of the robot arm 37. Each of the support members 38, 39, 40, and 41 is attached in parallel at right and left intervals. Next, as shown in Fig. 5, the connecting body 42 is placed between the front end portions of the two support bodies 38 and 39 on the left side, and the connecting body 43 is placed at the front end portions of the two support bodies 40 and 41 on the right side. between. Further, in the substrate holder 36, the support grooves 44, 45, 46, and 47 for supporting the wafer 2 in a vertical manner are formed on the respective support bodies 38, 39, 40 at regular intervals. The upper end of 41. In the substrate holder 36, by supporting the wafer 2 with the respective support grooves 44, 45, 46, and 47, the plurality of wafers 2 can be supported in parallel at a predetermined interval. Further, the robot arm 37 is coupled to the elevating mechanism 22 in a linked manner, and the elevating mechanism 22 allows the wafer 2 to be moved up and down between the cleaning unit 34 and the drying unit 35 for each batch. Further, the elevating mechanism 22 is connected to the control unit 48, and the control unit 48 can drive and control the elevating mechanism 22. Further, the substrate holder 36 is detachably attached to the front surface of the robot arm 37 (the left side of FIG. 6) by the pair of upper and lower coupling members 50 and 51, that is, The faces of the plurality of wafers 2 supported by the supports 38, 39, 40, 41 that are closest to the wafer 2 of the robot arm 37 are opposed to each other. The shielding body 49 is made of a material having a specific heat greater than that of the wafer 2, for example, quartz, synthetic quartz, and synthetic resin which are resistant to chemicals or organic solvents, and have a high heat resistance and mechanical strength of -16-(14) 1335637 degrees. In particular, the shielding body 49 is at least one of the groups * _ composed of polyetheretherketone (PEEK), polychlorotrifluoroethylene (PCTFE), polytetrafluoroethylene (PTFE), and polyvinylidene fluoride (PVDF). The synthetic resin of one is preferably formed. By providing such a shield 49, the substrate holder 36 forms a shielding surface 52 between the robot arm 37 and the wafer 2 that faces the wafer 2 to cover the surface of the wafer 2. The shielding surface 52 has substantially the same shape as the surface of the wafer 2 by the lower end front surface φ 53 of the mechanical arm 37 and the front surface 54 of the shielding body 49. The shielding surface 52 is used to shield the processing agent from the left and right sides of the robot arm 37 toward the surface of the wafer 2 closest to the robot arm 37 of the plurality of wafers 2. Therefore, the shielding surface 52 has a flow state in which the treatment agent closest to the surface of the crystal circle 2 of the robot arm 37 is in the same state as the other wafers 2 . Further, the shielding surface 52 formed by the lower end front surface 53 of the robot arm 37 and the front surface 54 of the shielding body 49 may also be wider than the surface of the wafer 2. • Next, the specific configuration of the washing unit 34 will be described. The cleaning unit 34 has a bottomed rectangular box type cleaning processing container 55 having an opening formed at an upper end portion, and a cleaning liquid supply for spraying the supply of the cleaning liquid to the left and right side walls 56 and 57 of the cleaning processing container 55. Nozzles 58, 59. Further, a drain pipe 61 is connected to the bottom wall 60 of the washing treatment container 55, and an on-off valve 62 is interposed in the middle of the drain pipe 61. Further, an annular overflow groove 63 is attached to the outer end portion of the upper end of the cleaning treatment container 55, and a drain pipe 65 is connected to the bottom wall 64 of the overflow groove 63, and is disposed in the middle portion of the drain pipe 65. There is a switching valve 66 -17- (15) (15) 1335637 Here, a pure water supply source 67 for supplying pure water and a chemical liquid supply source 68 for supplying a chemical liquid are connected to the cleaning via a three-way tube 69. The liquid supply nozzles 58, 59. By switching the three-way pipe 69, pure water or chemical liquid can be selectively supplied from the cleaning liquid supply nozzles 58, 59 to the inside of the cleaning processing container 55. Further, the on-off valves 62, 66 or the three-way tube 69 are connected to the control unit 48, and the control unit 48 can drive and control the on-off valves 62, 66 or the three-way tube 619. Next, when the specific configuration of the drying unit 35 is explained, the drying unit 35 has a substantially box-type drying processing container 70 in which an opening is formed at the lower end portion. Below the dry processing container 70, a shutter mechanism 71 is disposed. The shutter 71 has a shutter housing portion 73 formed on the left side portion of the casing 72, and the shutter 74 is housed in the shutter housing portion 73 in a switchable manner. Here, in the shutter mechanism 71, the shutter 74 is interlocked with the switch mechanism 75, and the switch mechanism 75 is connected to the control unit 48. The control unit 48 is driven to control the switching mechanism 75. Further, in the drying unit 35, the upper portion of the drying processing container 70 is formed into a semicircular arc shape, and a through hole 76 for inserting the mechanical arm 37 of the substrate holder 36 into the upper end portion is formed. A packing 77 is attached to the through hole 76. Therefore, the drying processing container 70 can be kept in an airtight state even in a state in which the mechanical arm 37 is inserted. Here, the drying processing container 70 is connected to the elevating mechanism 78 in series, and the elevating mechanism 78 is connected to the control unit 48. Further, the control unit 48 drives and controls the elevating mechanism 78. When the drying -18-(16)(16)1335637 processing container 70 is lowered by the elevating mechanism 78, the flange 79 formed at the lower end portion of the drying processing container 70 is in close contact with the shutter 74 of the shutter mechanism 71. Further, in the drying unit 35, a pair of left and right drying units for spraying a dry gas (for example, isopropyl alcohol gas or the like) with a carrier gas (such as nitrogen gas) are attached to the inner upper portion of the drying processing container 70. The steam supply nozzles 80 and 8 1 are formed in the dry steam supply nozzles 80 and 81 in the gas discharge ports 82 and 83 for discharging the dry steam toward the inner upper portion. Here, the dry vapor supply source 8 for supplying the dry steam together with the carrier gas is connected to the dry vapor supply nozzles 80, 81 via the on-off valve 85. Then, by opening the on-off valve 85, the IP A gas can be supplied from the dry steam supply nozzles 80, 81 together with the carrier gas to the inside of the drying processing container 70. Further, the on-off valve 85 is connected to the control unit 48, and the control unit 48 can drive and control the on-off valve 85. In the substrate cleaning and drying unit 23 having the above configuration, the wafer 2 is lifted and transported between the cleaning unit 34 and the drying unit 35 for each batch 5 by the substrate conveyer 36, so that the cleaning unit 34 is The rear portion of the cleaning processing container 55 and the rear portion of the drying processing container 70 of the drying unit 35 form an elevating space 86 for the lifting and lowering of the robot arm 37 of the substrate holder 36. In the substrate cleaning and drying unit 23, in order to enable all of the plurality of wafers 2 supported by the substrate holder 36 to be cleaned and dried, the cleaning solution is provided inside the cleaning processing container 55. The supply nozzles 58, 59 are disposed in a state in which the lifting space 86 extending to the side of the arm 37 is (S) -19-(17) 1335637. Further, in the drying processing space 70, the dry steam supply nozzles 80 and 81 are disposed in a state of extending to the space 86 of the side of the arm 37. As described above, the cleaning liquid supply nozzles 58, 59 or the drying steaming nozzles 80, 81 extend to the lifting space 86 on the side of the robot arm 37. The treating agent such as the cleaning liquid or the drying vapor is supplied from the side of the robot arm 37. The plurality of wafers supported by the supports 38, 39, 40, 41 are flown in the surface closest to the surface of the wafer 2 of the robot arm 37, and the surface supply ratio of the wafer 2 closest to the robot arm 7 is supplied. Other wafers 2 have more physical agents. However, in the above-described substrate cleaning and drying unit 23, since the front surface of the mechanical arm 37 of the plate holder 36, that is, the closest to the plurality of wafers 2 supported by the support, 39, 40, 41 The facing surface of the wafer 2 of 37 is formed with a shielding surface by the shielding body 49. Therefore, the shielding surface 52 is shielded from the side of the robot arm 37 into the surface of the wafer 2 closest to the robot arm 37. The flow state of the processing agent near the surface of the wafer 2 of the robot arm 37 is made the same as that of the other wafers 2. Further, in the cleaning liquid supply nozzles 58, 59, a heater for controlling the temperature of the treatment agent such as a cleaning liquid (not shown) may be provided. The liquid contact portion of the heater (the portion connected to the treatment agent) and the support may be provided. The bodies 38, 40, 41, the robot arm 37, the cleaning liquid drying container 55, or the drying process 70 may be composed of synthetic quartz in order to reduce metal impurities. As described above, in the substrate cleaning and drying unit 23, the maskable surface 52 covers the plurality of wafers supported by the substrate holder 36 to supply the lift gas, and the substrate 38 is close to the substrate 38. The arm 52 is connected to the left and right. Add 39, container cover 2 -20- (18) 1335637 closest to the 'wafer 2 of the robot arm 37, so the flow state of the treatment agent on the surface of the wafer 2 can be uniformed to prevent the occurrence of poor handling Not before. In particular, in the substrate cleaning and drying unit 23, the shielding surface 52 is formed in substantially the same shape as the surface of the wafer 2, so that the closest of the plurality of wafers 2 supported by the substrate 'support 36 can be obtained. The flow state of the processing agent on the surface of the wafer 2 of the robot arm 37 and the other wafer 2 is uniformized, and the plurality of wafers 2 can be uniformly processed. In addition, in the substrate cleaning and drying unit 23, the shielding body 49 is detachably provided to the substrate holder 36 to form the shielding surface 52. Therefore, the shielding body 49 can be attached to the existing substrate processing apparatus 1. At the same time, the workability of the replacement work of the shielding body 49 can be improved. The substrate cleaning and drying unit 23 is configured as described above, and can be driven and controlled by the control unit 48. Further, the control unit 48 can drive not only the control substrate cleaning and drying unit 23 but also the respective portions of the control substrate processing device 1. φ The control unit 48 drives the control substrate cleaning and drying unit 23 to continuously perform the cleaning and drying processes of the wafer 2. First, the control unit 48 performs initial setting of the substrate cleaning and drying unit 23. Specifically, the control unit 48 closes the on-off valve 62 of the cleaning processing container 55 and the opening and closing valve 66 of the overflow tank 63 as shown in Fig. 8(a), and uses the switching mechanism 75 to open the shutter. 74 becomes open. Next, the control unit 48 arranges the substrate holder 36 at a position above the shutter mechanism 71 with the elevating mechanism 22, and arranges the drying processing container '70 at intervals by using the elevator-21 - (19) 1335637 structure 78. The top of the substrate is supported. Then, the control unit 48 drives and controls the three-way tube 69, and supplies the oblique pure water supply source 67 to the inside of the untreated container 55 via the cleaning liquid supply nozzles 58, 59. At this time, the control unit 48 opens the valve 66 of the overflow tank 63, and discharges the overflowed pure water from the washing process. Then, as shown in Fig. 8(b), the control unit 48 drives and controls the transport mechanism 17, and the wafers 2 constituting the batch 5 carried by the batch transport mechanism 17 are embedded and formed in the base support. Supporting grooves 44 to 47 with 38 to 38 to 41. In this way, each of the wafers 2 is supported by the supports 38 to 41. Here, when the plurality of wafers 2 are supported by the supports 38 to 41, the wafers 2 are supported on the wafer surfaces of the adjacent support grooves 44 to 47 so that the wafer faces are opposed to each other. 38~41. Further, in the multi-wafer 2 supported by each of the supports 38 to 41, the wafer 2 is fitted into the support grooves 44 to 48 so that the back surface of the wafer 2 closest to the shield 49 faces the body 49. Then, the control unit 48 prepares the processing by processing the wafer placed on the substrate support member 36 with the pure water stored in the inside of the cleaning processing container 55. Specifically, the control unit 48 lowers the substrate holder 36 to the inside of the cleaning process by the elevating mechanism 22 as shown in FIG. 9( a ), whereby the wafer 2 placed on the substrate holder 36 is placed. The pure water stored in the inside of the treatment container 55 is immersed. Next, the control unit 48 is immersed in the inside of the cleaning processing container 55, and the water is supplied from the cleaning device 55, and the holder is held by the holder 2, and the I 2 is washed. Line Crystal-22- (20) (20) 1335637 Round 2 cleaning treatment. Specifically, the control unit 48 drives the control triode 69 to turn the chemical liquid (washing) while the on-off valve 62 of the cleaning processing container 55 is in the closed state and the opening and closing valve 66 of the overflow tank 63 is opened. The cleaning liquid is supplied from the chemical solution supply source 68 to the inside of the cleaning processing container 55 via the cleaning liquid supply nozzles 58 and 59. As a result, the pure water gradually overflows from the cleaning processing container 55 to the chute 63, and finally, the chemical liquid is stored in the inside of the cleaning processing container 55. Thereafter, the wafer 2 stored in the chemical liquid immersed in the inside of the cleaning processing container 55 is subjected to a washing treatment (chemical liquid washing treatment) by the chemical liquid. Then, the control unit 48 drives the control triode 69 to clean the state in which the on-off valve 62 of the cleaning treatment container 55 is closed and the on-off valve 66 of the overflow tank 63 is opened. The clean liquid supply source 67 is supplied to the inside of the washing processing container 55 via the cleaning liquid supply nozzles 58 and 59. By this means, the chemical liquid gradually overflows from the cleaning processing container 55 to the overflow tank 63, and finally, the pure water is stored in the inside of the cleaning processing container 55. Then, the wafer 2 immersed in the pure water stored in the inside of the cleaning processing container 55 is subjected to a washing treatment (rinsing treatment) by pure water. Then, the control unit 48 raises the position of the wafer 2 placed on the substrate holder 36 from the position inside the cleaning processing container 55 to the inside of the drying processing container 70. Specifically, the control unit 48 is as shown in FIG. b) As shown, the drying processing container 70 is lowered to a position directly above the shutter mechanism 71 by the elevating mechanism 78, and the substrate holder 36 is washed from the -23-(21) 1335637 by the elevating mechanism 22 The position inside is raised to the position of the crotch portion of the drying processing container 7, whereby the wafer 2 placed on the substrate holder 36 is transported to the inside of the drying processing container 70. Then, the control unit 48 closes the lower end opening of the processing container 70 by the shutter 74 of the shutter mechanism 71. Specifically, the control unit 48 closes the shutter 74 of the shutter mechanism 7 1 using the switch mechanism 75 as shown in the first diagram (a), and closes the shutter 74 to the lower end opening of the drying processing container 70. . Then, the control unit 48 supplies the dry vapor together with the carrier gas to the inside of the drying processing container 70 at a specific time. Specifically, the control unit 48 causes the opening and closing valve 85 to be opened. Therefore, the specific temperature of the dry vapor (IP A gas) can be supplied from the dry vapor supply source 84 together with the carrier gas to the inside of the dry processing container 70 via the gas discharge ports 82, 83 of the dry vapor supply nozzle 80 81. In the substrate cleaning and drying unit 23, in front of the robot arm 37 of the substrate holder 36, that is, closest to the robot arm 37 among the plurality of wafers 2 supported by the supports 38, 39 40, 41 Since the shielding surface 52 is formed on the opposite surface of the circle 2, the shielding gas is shielded from the left and right sides of the robot arm 37 into the surface of the wafer 2 closest to the robot arm 37 so as to be closest to each other. The flow state of the dry vapor on the surface of the circle 2 of the robot arm 37 is in the same state as the other wafers 2. Therefore, in the substrate cleaning and drying unit 23, the innermost to the plug-plate of the plurality of wafers 2 supported by the substrate holder 36 can be covered by the mask 52. - (22) (22) 1335637 Near the wafer '2 of the robot arm 37, the flow state of the dry vapor on the surface of the wafer 2 can be made uniform to prevent the occurrence of processing defects. Further, since the shielding body 49 is composed of a material having a specific heat larger than the wafer 2, even if IPA gas or the like is used as a treatment agent for processing the wafer 2 as described above, and the IPA or the like is adsorbed to the shielding body 49, the crystal The temperature of the circle 2 also hardly rises. Therefore, even if a sufficient amount of IPA is adsorbed on the wafer 2 in the vicinity of the shield 49, it is possible to prevent the wafer 2 from being defective in processing, and it is also possible to reduce the amount of use of the IPA gas. Further, as described above, when the plurality of wafers 2 are supported by the supports 38, 39, 40, and 41 of the substrate holder 36, the plurality of wafers 2 supported by the supports 38, 39, 40, and 41 are the most Since the back surface of the wafer 2 close to the shielding body 49 faces the shielding body 49, the surface of the surface on which the cleaning or drying treatment is performed on the wafer 2 does not face the shielding body 49. Therefore, the processing for the surface of the wafer 2 closest to the shield 49 can be made uniform with the processing for the surface of the other wafer 2. Furthermore, each wafer 2 is supported by the support bodies 38, 39, 40 in such a manner that the surfaces of the two wafers 2 embedded in the adjacent support grooves 44, 45, 46, 47 face each other or the back surface. 41, so that the surfaces of the wafers that can be processed by the supports 2, 38, 40, and 41 are opposite to each other, so that the surface of all the wafers 2 can be cleaned. Or the drying process is uniformized. Finally, as shown in FIG. 10(b), the control unit 48 lifts the drying processing container 70 by the lifting mechanism 78, and the substrate supporting device 36 is lifted by the batch conveying mechanism 17. Pick up wafer 2. In this manner, the end control -25- (23) (23) 1335637 section 48 cleans the substrate one of the dry processing units. Further, the substrate supporting member or the substrate processing drying unit (substrate processing unit) of the present invention is not limited to the above-described state, and various modifications can be applied. For example, in the substrate cleaning and drying unit 23 described above, the shielding surface 52 is formed between the robot arm 37 of the substrate holder 36 and the wafer 2, but the shielding surface 52 is not limited thereto, and may be shielded by the shielding surface 52. The agent may flow from the side of the robot arm 37 to the surface of the wafer 2, or the space of the wafer 2 may not be disposed inside the cleaning processing container 55 or the drying processing container 70, and the wafer on the side of the robot arm 37 The opposing faces form a masking surface 52. Specifically, for example, the shielding surface 52 may be formed in front of or behind the robot arm 37 of the substrate holder 36, or a shielding body having the shielding surface 52 may be provided in the cleaning processing container 55 or the drying processing container 70. Further, the body of the robot arm 37 of the substrate holder 36 may also form a shielding surface 52 with respect to the wafer 2 instead of providing the shielding body 49 in the substrate holder 36. Hereinafter, this example will be described using Figs. 11 to 13 . Fig. 11 is a front view showing the substrate holder 36 of the main body of the robot arm 37 with respect to the shielding surface 52 of the wafer 2. Fig. 12 is a side view of the substrate holder 36 shown in Fig. 11, Figure 13 is a plan view of the substrate holder 36 shown in Figure 11. As shown in the figure or the like, the robot arm 37 includes a shadow that opposes the wafer 2 closest to the robot arm 37 among the plurality of wafers 2 to be supported by the supports 38, 39, 40, 41. Part 3 7a. The shielding surface of the shielding portion 3 7a opposed to the wafer 2 is substantially the same as the surface of the wafer 2 -26-(24) (24) 1335637 or wider than the surface of the wafer 2. Further, the shielding portion 37a is composed of a material having a specific heat larger than that of the wafer 2, specifically, for example, polychlorotrifluoroethylene (PCTFE). Further, as described above, the detachable shielding body 49 shown in Fig. 5 and the like can be provided in the substrate holder 36 shown in Figs. According to the substrate holder 36, the wafer 2 closest to the robot arm 37 of the plurality of wafers 2 supported by the supports 38, 39, 40, 41 can be covered by the shielding portion 37a of the robot arm 37 toward the robot arm. 37 side surface. Therefore, the flow state of the treatment agent on the surface of the wafer 2 can be made uniform, and the occurrence of processing defects of the wafer 2 closest to the robot arm 37 can be prevented. Further, since the shielding portion 37a of the robot arm 37 is composed of a material having a specific heat larger than the wafer 2, even if a desiccant IP A gas (isopropyl alcohol gas) or the like is used as a treatment agent for processing the wafer 2, When the IPA or the like is adsorbed to the shielding portion 37a of the robot arm 37, the temperature of the shielding portion 37a hardly rises. Therefore, even if a sufficient amount of IPA is adsorbed to the wafer 2 in the vicinity of the shield portion 37a of the robot arm 37, the wafer 2 can be prevented from being defective in processing, and the amount of use of the IPA gas can be reduced. [Embodiment] Next, an embodiment of the substrate holder 36 shown in Figs. 5 to 7 will be described. Further, a comparative example in the case where the shielding body 49 is not attached to the substrate holder 36 shown in Figs. 5 to 7 will be described as a comparison object. -27- (25) (25) 1335637 [This embodiment] ” The substrate holder 36 shown in Figs. 5 to 7 is prepared. As shown in FIGS. 5 to 7 , the substrate holder 36 has a robot arm 37 extending in the vertical direction, and a front lower end portion of the robot arm 37 extending in the front-rear direction (the horizontal direction in FIG. 6 ). Four supports 38, 39, 40, 41. Further, support grooves 44, 45, 46, and 47 for supporting the wafer 2 in a vertical manner are formed at the upper end portions of the respective support bodies 38, 39, 40, and 41 at regular intervals. In the substrate holder 36, the wafer 2 is supported by the respective support grooves 44, 45, 46, 47, and the plurality of wafers 2 can be supported in parallel at a predetermined interval. Moreover, in front of the robot arm 37 of the substrate holder 36 (on the left side of FIG. 6), that is, closest to the robot arm in the plurality of wafers 2 supported by the supports 38, 39, 40, 41 On the opposite surface of the wafer 2 of 37, a substantially semicircular plate-shaped shielding body 49 is detachably attached thereto by a pair of upper and lower connecting members 50 and 51. The shielding body 49 is composed of a synthetic resin of polyetheretherketone (PEEK) having a specific heat greater than that of the wafer 2. By providing such a shield 49, the substrate holder 36 is disposed between the robot arm 37 and the wafer 2 to form a shielding surface 52 that faces the wafer 2 to cover the surface of the wafer 2. The shielding surface 52 is formed in substantially the same shape as the surface of the wafer 2 by the lower end front surface 53 of the mechanical arm 37 and the front surface 54 of the shielding body 49. In this embodiment, when the plurality of wafers 2 are supported by the supports 38 to 41, the wafers of the two wafers 2 embedded in the adjacent support grooves 44 to 47 are opposed to each other or the back surface of each other to make the wafers 2 Supported by the support 38~-28- (26) (26) 1335637 41» Furthermore, the wafer 2 closest to the shield 49 is supported in the plurality of wafers 2 supported by the respective supports 38 to 41 The rear surface faces the shielding body 49, and the wafer 2 is inserted into the support grooves 44 to 47. Using the substrate holder 36, the plurality of wafers 2 supported by the substrate holder 36 are simultaneously cleaned by the cleaning unit 34, and then the plurality of wafers 2 are dried by the drying unit 35 by IPA. The gas is simultaneously dried. After drying, the number of water marks formed by the surface of the wafer 2 closest to the robot arm 37 in the plurality of wafers 2 supported by the supports 38, 39, 40, 41 is calculated. The number of watermarks calculated is four. [Comparative Example] In the comparative example, the configuration in which the shield 49 was removed from the substrate holder 36 shown in Figs. 5 to 7 was prepared. In the same manner as in the present embodiment, the plurality of wafers 2 are simultaneously washed by the cleaning unit 34, and then the plurality of wafers 2 are simultaneously dried by the drying unit 35. It is dried simultaneously by IP A gas. After drying, the number of watermarks formed by the surface of the wafer 2 closest to the robot arm 37 of the plurality of wafers 2 supported by the supports 38, 39, 40, 41 is calculated. The number of watermarks calculated is 1 75. In the left and right portions of the surface of the wafer 2 which are not shielded by the robot arm 37, the watermark is formed in a particularly large amount. [Experimental Results] As described above, it is known that when the shielding body 49 is provided on the substrate holder -29-(27) 1335637 36, the shielding surface 52 is formed on the wafer 2 closest to the robot arm 37, and is not provided. When the shield 49 is compared, the number of watermarks formed on the surface of the wafer 2 can be greatly reduced. That is, it is known that the substrate holder 36 according to the present embodiment is compared with the substrate holder of the comparative example because the shielding body 49 can cover the plurality of wafers 2 supported by the supports 38, 39, 40, and 41. The wafer 2 closest to the robot arm 37 faces the surface of the robot arm 37 side, so that the flow state of the IPA gas on the surface of the wafer 2 can be made uniform, and the wafer 2 closest to the robot arm 37 can be obtained. The occurrence of poor handling is prevented. Further, it is known that since the shielding body 49 is composed of a synthetic resin of polyetheretherketone (PEEK) having a specific heat larger than that of the wafer 2, IPA or the like is not adsorbed to the shielding body 49, and the temperature of the shielding body 49 is obtained. It hardly rises, and even if a sufficient amount of IPA is adsorbed to the wafer 2 in the vicinity of the shield 49, it is possible to prevent the wafer 2 from being defective in processing. BRIEF DESCRIPTION OF THE DRAWINGS φ Fig. 1 is a plan view showing a substrate processing apparatus of the present invention. Fig. 2 is a block diagram showing a substrate cleaning and drying unit of the substrate processing apparatus of Fig. 1. Fig. 3 is a front cross-sectional view showing the substrate cleaning and drying unit shown in Fig. 2. Fig. 4 is a side cross-sectional view showing the substrate cleaning and drying unit shown in Fig. 2. Fig. 5 is a front elevational view showing the substrate holder provided in the substrate cleaning and drying unit shown in Fig. 2. (28) 1335637 Fig. 6 is a side view of the substrate holder shown in Fig. 5. Figure 7 is a plan view of the substrate holder shown in Figure 5. Fig. 8 is an explanatory view of the operation of the substrate cleaning and drying unit shown in Fig. 2, and is an explanatory view showing the operation at the time of cleaning preparation. Fig. 9 is an explanatory view of the operation of the substrate cleaning and drying unit shown in Fig. 2, and shows an operation of the cleaning process. Fig. 10 is a view showing the operation of the substrate cleaning and drying unit shown in Fig. 2, φ, and an explanatory view showing the operation at the time of drying. Fig. 11 is a front elevational view showing a substrate holder provided with another configuration of the substrate cleaning and drying unit shown in Fig. 2. Fig. 12 is a side view showing a substrate holder of another configuration shown in Fig. 11. Fig. 13 is a plan view showing a substrate holder of another configuration shown in Fig. 11. [Description of main component symbols] - 1 : Substrate processing apparatus 2 : Wafer 3 : Carrier 4 : Carrier loading/unloading section 5 : Batch 6 : Batch forming section 7 : Substrate processing section - 31 - (29) 1335637 8 : Carrier Platform 9, 13: switch door 10 = carrier transport mechanism 1 1 : carrier storage portion ' 12 : carrier mount 14 : substrate transfer mechanism 1 5 : batch formation mechanism φ 1 6 : substrate mutual position change mechanism 1 7 : Batch transfer mechanism 1 8 : Wafer storage state detecting sensor 19 : Notch alignment unit 20 : Washing and drying mechanism 2 1 : Cleaning mechanism 22 : Lifting mechanism 23 : Substrate washing and drying unit φ 24 : Washing mechanism Unit 3 4 : Cleaning unit 3 5 : Drying unit 3 6 : Substrate support 37 : Robot arms 38 , 39 , 40 , 41 : Support bodies 44 , 45 , 46 , 47 : Support groove 49 : Screening body - 32 -