TWI335489B - Method for inspecting photomask and real-time online method for inspecting photomask - Google Patents

Description

1335489 UMCD-2006-0694 23578twf.d〇c/p IX. Description of the Invention: [Technical Field of the Invention] ‘and particularly related to the present invention relates to a method for detecting a mask. An on-line instant mask detection method. [Prior Art] Recently, semiconductors have tended to reduce the design and development of circuit components. • (4) The most important step in the semiconductor manufacturing process is the lithography (Ph〇t〇lithography). Any pattern related to the structure of a semiconductor component such as a film is determined by a lithography process to determine the size of its critical dimension (CD). Therefore, it is very important to transfer the pattern on the reticle to the accuracy of the wafer. If the pattern on ^曰 is incorrect, the pattern transfer will be more incorrect. It will affect the critical dimension tolerance on the wafer (10) emnce) and reduce the exposure. When Lu produces a reticle, sulfuric acid is usually used to clean the reticle, and • sulfate ions (10)2) remain on the reticle. After the lithography process, the exposure step is performed by the reticle to transfer the pattern on the reticle to the wafer. [The valley is easy to combine the sulfate ion on the reticle with the ammonium ion (nh4+), or There are other particles attached to the reticle, and a haze of haze is formed on the reticle. The newly formed mask has a small black shadow and does not have much influence on the process. However, as the process time is lengthened or the number of processes is increased, the chemical change on the mask continues, causing the shadow mask to appear. Gradually grow and expand to affect the pattern on the reticle. If the above-mentioned 5 UMCD-2006-0694 23578twf.doc/p reticle with a blister black shirt is used, the pattern transfer will often result in inaccurate pattern transfer to the crystal circle, which will seriously affect the subsequent process. In general, in order to determine whether there is a reticle shadow on the reticle, a reticle inspection machine is used for scanning detection of the reticle. However, before using this reticle inspection machine to detect the reticle, the reticle must be removed from the machine for off-line reticle inspection. In this way, it takes time to wait for the test result, and the sample rate of the test is low. Moreover, the above-mentioned photomask inspection machine is usually expensive, resulting in a substantial increase in cost. SUMMARY OF THE INVENTION In view of the above, the present invention provides a reticle detecting method for defining a virtual pattern area on a dicing area on a wafer, and judging whether the reticle used has a reticle by overlapping the dummy pattern area. Black shadow. The invention further provides an on-line instant mask detection method, which can perform sampling detection on the completed wafer at the same time as the line=process, so as to achieve the purpose of detecting the mask. Blank Wei cover detection method, suitable for pattern area and: lithography process: for::% circle, the wafer is in the above-mentioned mask-element pattern area, $ has complex = light area, and there is in each exposure area曰益一- From the /, the mother and mother piece pattern area is surrounded by a cutting zone. In the case of the second generation, the case area corresponds to the pattern area of the reticle, and after the dicing area corresponds to the case, the dicing area is divided into a plurality of virtual maps and pseudo-pattern areas: less = graph Γ 两 两 两 两 两 ' ' Virtual/, and other virtual pattern areas are not completely overlapped, 1335489 UMCD-2006-0694 23578twf.d〇c/p is not completely overlapped virtual® case corresponding to a part of the blank area on the mask has a Mask black shadow. In an embodiment of the invention, the photomask shading described above comprises ammonium sulfate particles. In an embodiment of the invention, the reticle shadow described above includes residual particles after cleaning the reticle. In one embodiment of the invention, the photomask shading described above includes a student object. In an embodiment of the invention, the two-to-two overlap comparison step further includes overlapping and comparing two adjacent virtual pattern regions. In an embodiment of the invention, when the virtual pattern regions that are not completely overlapped are screened, the two-two overlap comparison step further includes performing a repeated comparison step. In an embodiment of the invention, the repeating comparing step includes overlapping the virtual pattern regions of the two exposure regions in which the scribe lane regions correspond to each other. In a portion of the blank area corresponding to the first dummy pattern, in an embodiment of the present invention, when the first exposure area is not completely overlapped, the first virtual pattern corresponds to the second exposure area and is not completely overlapped. When the second dummy pattern of the dummy pattern is completely overlapped, the reticle phase is defined. The invention further proposes a method for detecting the visor on the line, and is suitable for performing lithography on the wafer of If on the wafer, wherein the light is used. Cover has a pattern

There is a shadow mask black shadow. When one of the number of production cycles is one, 1335489 ^00-2006-0694 23578twf.d〇c/, = sampling, steps. The sampling detection step includes: 1 in each exposure zone, there is a plurality of exposure regions, a plurality of exposure regions, a channel region W, a matrix region, a component pattern region is-cut, and a mother component pattern region corresponds to the mask. The map area corresponds to the blank area of the mask. Next, cut the road 3 points ^

= 丄 = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = The sickle white area has a black shadow of the mask. In addition, when the continuous process time does not satisfy the sampling cycle and the number of processes does not satisfy the number of wafers completed by the micro-hard process, the lithography process is continued. In an embodiment of the invention, the photomask black shadow comprises ammonium sulfate particles. In one embodiment of the invention, the reticle shadow described above includes residual particles after cleaning the reticle.

In one embodiment of the invention, the photomask shading described above includes a student object. In one embodiment of the invention, the two-to-two overlap comparison step described above further includes overlapping and comparing two adjacent virtual pattern regions. In an embodiment of the invention, when the virtual patterns that are not completely overlapped are screened, the two-two overlap comparison step further includes performing a repeated comparison step. In an embodiment of the present invention, the repeating comparing step includes overlapping and comparing the virtual pattern regions of the two exposed regions corresponding to each other in the reticle region. In an embodiment of the present invention, when the first exposure regions are not completely stacked When the first dummy pattern of the 1335489 UMCD-2006-0694 23578twf.doc/p is completely overlapped with the second dummy pattern of the first dummy pattern corresponding to the incompletely overlapping in the second exposure region, the mask is defined On a partial blank area corresponding to the first dummy pattern, there is a mask black shadow. The invention defines a virtual pattern area on the wafer on which the lithography process is completed, and determines whether the mask used in the process has a mask black shadow by comparing the virtual pattern areas. Therefore, the present invention can utilize the Sampling Crystallization® to achieve the purpose of the H-time reticle to influence the subsequent process while performing the lithography process. The above features and advantages of the present invention will become more apparent and obvious, and the following detailed description is given in conjunction with the accompanying drawings. [Embodiment] In the bird, the process of exposure in the 3 shadow process will cause the mask to be black on the mask L'. Even the mask shadow will gradually expand as the processing time increases, which will affect the subsequent process and will affect Process reliability and cost a lot. Therefore, the present invention performs lithography and considers the influence of the light pattern transfer, and performs a wafer on the wafer for completing the process step. The following is a special method for the tiling of the square wire of the two squares (four) fresh (four) method ibaH miscellaneous according to the invention - the schematic of the lithography process. BRIEF DESCRIPTION OF THE DRAWINGS The present invention is a schematic top view of a wafer according to an embodiment of the invention. Fig. 2 is a flow chart of the online instant mask detection according to the rejection example. Figure 3 is a flow chart of a reduced inspection guide according to the present invention. 1335489 UMCD-2006-0694 23578twf.doc/p

First, please refer to Fig. 2, and step S210 sets the sampling detection mechanism. This sampling detection mechanism is, for example, setting the sampling cycle time or the number of wafers completed by the lithography process. In one embodiment, the lithography process machine completes the time required to reach the wafer for 40 minutes, and the number of wafers completed per batch is 25; the sampling detection mechanism is defined as, for example, 8 batches of crystals per completion. The round is sampled and tested, and the sampling cycle time is set to 320 minutes, while the number of wafers completed by the lithography process is set to 200. Of course, the sampling detection mechanism is not limited to the one set in the above embodiment, and those skilled in the art can adjust the machine characteristics or process requirements. After that, step

S220 performs a lithography process. Referring to FIG. 1A and FIG. 1B simultaneously, in the lithography process, for example, using a stepper, the reticle 11 is applied to different positions on the plurality of wafers 1 at different positions on the plurality of wafers 1 The cover has a pattern area 110a and a blank area ii 〇 b. A thin film layer (not shown) and a photoresist material layer (not shown) are deposited on the wafer 1 , for example. As shown in FIG. 1B, the wafer on which the lithography process is completed has a plurality of exposure regions, wherein each of the exposure regions 1 〇 2 has a component pattern area, and the component diagram 2 l 〇 2a is cut by the trajectory area amp & surround. Each θ ^ area, 1 〇 2 on the wafer 1 例如 corresponds to the reticle 110, for example, the pattern pattern area 102a is patterned by the mask area 〇a ' and the dicing area _ corresponds to the mask m .疋 112 is usually formed in the reticle 110 gradually, and as the process progresses, the reticle shadow 112 will be introduced into the micro-shirt process, and a defect pattern will be formed on the completed wafer (10).

':S UMCD-2006-0694 23578twf.doc/p 106. The position of the defect map (4) 6 corresponds to the position formed by the mask black scene M12, and gradually affects the element pattern area 1G2a of the circle 1G0 as the mask shadow m is enlarged. That is to say, even if the tiny ‘, 影1 】 2 is just formed on the blank area, the generation of the defect pattern 106 can be found on the opposite track area 1 〇 2b. The above-mentioned light particles 'two' can be used to lick the stone claws to record the particles 'other chemical residues remaining after cleaning the light I 110. Of course, the mask no and the wafer (10) division is not limited to the figure 1A 常 常 当 当 当 可视 可视 ; ; ; ; ; ; ; ; ; ; 调整 调整 调整 调整 调整 调整 调整 调整 调整 调整 调整 调整 调整 调整 调整 调整 调整 调整 调整 调整 调整110 on the wafer 100 sample inspection; machine = time or the number of processes meets one of the number of pumping. = sampling cycle time and lithography process to complete the wafer cycle time or the duration of the process and the number of processes meet the sampling拙Recognition: If one of the number of wafers is set, Fantasy 40) 〇 If the test step determines whether there is a mask black shadow on the mask (between the steps, and the continuous process of the process meets the sampling cycle) , continue to do not meet the preset lithography process to complete the number of wafers, please meet the set pomelo sample detection mechanism. Is completed in the micro-circle: ^ 100. - General decision #, 日日® ,, sample view One of the wafers 110b starts to be ^ brother's mask black shadow 112 will be easily generated from the blank area of the mask 110, that is, after the completion of the lithography process, the defect pattern 1 〇 6 S31. Area_up. Therefore, in step & 102b j is a plurality of virtual District 1〇4 case,

11 1335489 UMCD-2006-0694 23578twf.doc/p for viewing defect pattern 106. • Step S320' performs a two-two overlap comparison step of the virtual pattern area, wherein the two-two overlap comparison step is, for example, overlapping to compare whether the adjacent two dummy pattern areas 104 are completely overlapped. If all the dummy pattern regions 104 in the legs of the scribe line region are completely overlapped, it means that there is no defect pattern 106 on the wafer 1 ,, and the reticle 110 does not have the mask black shadow step S350) . On the other hand, when at least one of the dummy pattern regions 104 and the defect pattern 106 are present, the step of performing the two-two overlap comparison may not completely overlap with the other dummy pattern regions 104 having no defect patterns 106. In this way, by detecting the superposition of the dummy pattern regions 1〇4 in the exposure region 102, it is known that the dummy pattern region 1〇4 has the defect pattern 1〇6, which corresponds to the process used. On the reticle 110, it is judged that a part of the blank area 110b of the reticle 11 has a mask black ι 2 (step § 340). Further, by examining the relative positions of the defect pattern 106 and the entire exposure area 102, it is further known which portion of the blank area 1 lob is formed by the photomask. • In the above, when the virtual pattern regions 104 that are not completely overlapped are selected by overlapping and comparing the two adjacent dummy pattern regions 104, the repeated comparison step may be selectively performed (step S330). The repeating comparison step is, for example, an overlap comparison of the virtual pattern areas 104 in which the scribe line areas 1 〇 2b correspond to each other in the two different exposure areas 1 〇 2 . Since each exposure zone 1 〇 2 corresponds to the reticle 110', once the reticle n0 has the reticle shadow 112, the defect pattern 106 is repeatedly reproduced in the same corresponding position in the different exposure regions 102. When the two exposure areas 102 of the overlap comparison are simultaneously at the same position

· ' S 12 1335489 UMCD-2006-0694 23578twf.doc/p When the virtual pattern area 104 is not completely occupied, it can be defined that the mask HQ has a mask on the blank area i1〇b corresponding to the virtual pattern area 104. The spot image 112 (step S340). In other words, in step S320, the virtual pattern area 04 in the same exposure area 1〇2 is compared to screen out the partially-completed virtual pattern area 104 having the defect pattern 1〇6. In step §330, the incompletely superposed virtual pattern regions 1〇4 of the different exposure regions 102 on the wafer 100 can be further compared to see whether the two exposure regions 1〇2 have defect maps at corresponding positions. t 106, to accurately define the position of the mask shadow m on the mask 11〇. It can be seen from the above that while performing the lithography process, by setting the sampling detection mechanism, a plurality of virtual pattern regions are defined in the scribe line region of the completed wafer, and the overlap comparison detection is performed for each virtual pattern region to Correspond to '= reticle pattern or layout for step-by-step verification. In this way, it is possible to detect on the line, that is, the "exposure area of the crystal", and then speculate whether there is a shadow mask on the fresh side, and it is not necessary to take out the mask to view the mask. In addition, when the dicing area of different exposure areas is detected, there is a repetitive defect pattern. Further, the machine is further set to perform an automatic auto-hold operation, '^ visor and clean the reticle The plan is waiting for the rest. In addition, the step of reworking the aa circle having the defect pattern before the subsequent etching process of the wafer can be performed by those skilled in the art, and the embodiment thereof can be easily inferred, and thus will not be described herein. The present invention has at least the following advantages: h The method of the present invention does not require the photomask to be removed from the machine, and can be immediately performed on the line 1335489 UMCD-2006-0694 23578twf.doc/p Mask detection. 2. The method of the present invention is capable of determining whether or not the corresponding mask has the cutting cost of the material only by detecting the crystal region', and can reduce the cost of the inspection. "So very simple waiting for two = intelligent sampling detection mechanism, reducing

Although the present invention has been disclosed in the preferred embodiments as the upper limit, the invention is generally in the art; the invention is intended to be within the spirit and scope of the invention, and the invention may be modified or not. Bao Weiwei #视后社巾 Please take care of the definition of the enclosure [schematic description of the drawings] Figure 1A is a schematic diagram of a lithography process according to an embodiment of the invention. FIG. 1B is a schematic top view of a wafer according to an embodiment of the invention.

Figure 2 is a flow chart of an online instant mask detection method in accordance with an embodiment of the present invention. 3 is a flow chart of a sampling detection step in accordance with an embodiment of the present invention. [Main component symbol description] 100 • Wafer 102: exposure region 102a: component pattern region 102b: dicing region 104. dummy pattern region 106: defect pattern 14 1335489 UMCD-2006-0694 23578 twf.doc/p 110: reticle 110a : pattern area 110b: blank area 112: mask black shadow S210~S240, S310~S350: steps

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Claims (1)

1335489 * · UMCD-2006-0694 23578twf.d〇c/p X. Patent application scope: * 1 Two kinds of mask detection methods are applicable to - reticle, f, a - pattern area and - blank area, the method includes · The early Ά 先 hood provides a wafer with a plurality of exposure areas on the wafer in the light star, each of the exposures = medium = process 'the case area, each of the component patterns District is - cut i zone: Wai, :? The component pattern area corresponds to the pattern area of the reticle and the mother should correspond to the blank area of the reticle; and the kerf area pair divides the scribe line into a plurality of virtual figures to be surrounded by At least one of the exposure regions - the virtual pattern regions are overlapped by one or two, and at least one of the case regions corresponds to the other virtual pattern regions (2), and the virtual pattern regions that are not completely overlapped Light:: 3 Do not have a mask black shadow in the blank area. 2. The reticle inspection as described in claim i of the scope of the patent includes the smear of ammonium sulphate. 4 八中 ... 3. The reticle detecting method described in claim i of the patent scope, the holographic black shadow includes residual particles after cleaning the reticle. - 4. The reticle inspection party as described in the scope of the patent application section 362. The reticle shadow comprises a chemical product. 5. In the reticle detecting method described in claim 1, the two overlapping comparison steps further include overlapping and comparing the two adjacent sounds to each other. 6. As claimed in claim 1 The reticle detection method is described, and when the virtual pattern area which is not completely overlapped is selected, the two-and-two-country 16 1335489 么年月月> old correction replacement page UMCD-2006-0694 23578 twf.doc/p ' The face 'also includes the step of comparing the virtual pattern regions corresponding to the plurality of scribe lane regions to each other. • #_^ As in the light army detection method described in claim 6, in which the i-to-f mid-region is incompletely superimposed with a first-virtual pattern and - the second 2 is = incompletely superimposed - two = two of the second virtual pattern of the virtual pattern corresponding to the first virtual white area on the mask, the mask black shadow. • Several wafers are measured 2' for a photomask in a complex-blank area, where the mask has a pattern area and a sample cycle time, wherein the sample detection mechanism includes a pumping process Completing the number of wafers; processing time on the wafers to perform the lithography process - the continuous process of completing the wafer, the number of times satisfying the sampling cycle time or the lithography process includes: The detection step, the ®, ϊί lithography process, the secret-first-crystal wafer has a plurality of exposure regions, each of the exposure regions is surrounded, and each of the component pattern regions is a scribe line region, wherein the pattern pattern area corresponds to the pattern of the reticle = the white-cut area corresponding to the touch-white area; =, the area is divided into a plurality of dummy pattern areas; and the area is entangled in the exposure areas At least one of the inner component patterns when the rows - two two overlaps the comparison step 'where ^, £ to > where - and the other of the virtual patterns 17 1335489 UMCD-2006-0694 23578twf.d〇c/p superimposed 'the part of the blank area corresponding to the virtual pattern area which is not completely overlapped, the blank area has a mask special shadow; ice, ill please patent (4) The eight (4) reticle detection side and the eight-light hood black shadow include the sulphuric acid recording particles. Method 101 The on-line instant mask detection u in the item 8 of the range, the medium shadow mask includes the residual particles after cleaning the mask. In the online instant mask inspection described in Item 8 of the patent and the patent, the mask black shadow includes a chemical product. Method, the online instant mask described in claim 8 of the patent application detects the virtual maps: the two overlapping comparison steps further comprise overlapping and comparing two adjacent 13 methods, and the online instant mask described in claim 8 When detecting the two overlaps and filtering the incompletely superimposed virtual pattern regions, the two (four) case steps further include the step of comparing the cut and subtraction regions to each other. The measurement method, the on-line instant mask inspection pattern described in item 13 of the patent application scope corresponds to the incomplete overlap of the first-exposure region of the first-virtual pattern in which the first-exposure region is not completely overlapped. In conjunction with the first virtual price 蚱隹: when the virtual pattern is completely overlapped, the part of the reticle that is opposite to the library/birth pattern is defined on the blank area, and the reticle shadow is present. , 1335489 f? "Month-day correction replacement page UMCD-2006-0694 23578twf.doc/p XI, schema: 19 1335489 ,. UMCD-2006-0694 23578twf.doc/p Leap Year C Month > Day Correction Replacement Page figure 2 S340 Figure 3 20