TWI334172B - Method of manufacturing opening and mask layer - Google Patents

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention This invention relates to a method of fabricating a semiconductor device, and more particularly to a method of fabricating an opening and a mask layer. [Prior Art] With the development of integrated circuit technology, it is a function of strengthening the speed of the components. The density of the transistors required in the integrated circuit is greatly increased. In order to increase the unit area _transistor density, the reduction and integration of components is an inevitable trend. The most important thing is the micro, in order to reduce the size of the component, the pattern of the reticle opening _^ can be reduced to meet the needs. However, this kind of mask with a small rule refers to the day! And the difficulty 'especially, subject to factors such as optical scattering, Bu, the product (4) case 'can not be 100% transferred to the photoresist pattern' And there is a case where the corner is rounded. For example, the trench access device (4) is low in its lateral dimension to form a deep trench on the substrate + and to place the dummy m a on the substrate. * In the opening of the ditch, the photoresist pattern is rounded off, and the (four)-shaped ditch is formed. The ruler of the ruler [Figure: the degree of rounding is not -" will cause the ditches to be diligent, and the three-^. Such a circular, non-different trench will bring the distance between the main ^ 1 and the capacitor, and the device that greatly increases the short-circuit of the component reduces the electrical performance and reliability of the 7L component.定, =θ 2敕 Since the size of the opening is determined by the pattern of the opening of the reticle, the width or length of the opening is to be adjusted. It is necessary to scale up 5 93146 21748 twf.doc/n or to reduce it, or it must be made separately. A mask. These methods are not incapable of meeting the requirements of component layout, or the manufacturing process is complicated and expensive. No matter what method, it can not meet the diversified requirements of component design, which is quite inconvenient. SUMMARY OF THE INVENTION In view of the above, it is an object of the present invention to provide a method of manufacturing an opening that avoids the problem of rounding of the corners and that can individually adjust the width or length of the opening. Another object of an embodiment in accordance with the present invention is to provide a fabrication layer having a mask layer that is formed with a good reduction, which facilitates subsequent etching processes. The present invention provides a method of making an opening suitable for forming an opening in a layer of material. The & method is to form a plurality of protective layers on the material layer, which are parallel to each other and extend in the first direction. Next, the substrate is formed on the substrate to cover the protective layer. A plurality of photoresist layers are formed on the anti-reflective layer, and extend in the second direction, wherein the second direction is about one direction. Then, the photoresist layer is used as a mask to remove the complex gamma ray layer. Then, the photoresist layer and the protective layer are used as a mask to remove the second portion to form an opening in the material layer. In the manufacturing method of the above opening, the shape of the opening includes a rectangle. In the manufacturing method of the above opening, the opening σ is adjusted in the second direction = the worse, and the spacing of the protective layer is more L in the first direction. The size can be changed by adjusting the distance between the photoresist layers. ° In the manufacturing method of the above opening, the antireflection layer has a flat surface. 93146 21748 twf.doc/n In the method for producing the above opening, the method for producing the antireflection layer includes a spin coating method. In the manufacturing method of the electric material, in the method of manufacturing the anti-reflection layer, including the organic dislocation method, the manufacturing method of the Bao Wei comprises forming a conformal protective layer on the enamel layer of the mask curtain material, and then conforming to the conformal layer. On the protective layer, mutually parallel multi-sided patterned photoresist layers are formed, and the patterned photoresists extend in the first direction. A patterned protective layer of the photoresist layer is then patterned. In the manufacturing method of the above opening, the material f of the material layer includes polycrystalline germanium, and the method of removing a part of the material layer in the manufacturing method includes a dry-type method. For example, it is a dry remnant method using a listener and a listener. Niobium nitride: Nitrogen oxide: The material of the two sides of the 'Bao' (4) includes yttrium oxide, and the method of removing the protective layer includes dry method, for example, dry-type engraving with I gas. . In the manufacturing method, the material layer is used as a mask layer. The method of manufacturing the substrate includes first providing a substrate, and forming a plurality of first-germanium layers on the protective layer, wherein: the layer is a mask =:: extending in the first direction. Then the first light layer. Then, the protective layer of the bare road is removed, and then the first photoresist is removed from the anti-reflection®; an anti-reflective layer is formed on the soil to cover the protective layer. A plurality of second photoresist layers are then formed on the reflective layer. The second photoresist layers extend in a second direction, wherein the second direction is approximately perpendicular to the first direction. : The first photoresist layer is used as a mask to remove the exposed anti-reflection layer. Second, the resist layer and the protective layer are masks, and part of the mask material layer is removed. The mask layer has an opening. The shape of the opening is a rectangle. In the manufacturing method of the mask layer, the anti-reflection layer has a flat surface. The method for producing the Alpha reflection layer is, for example, a spin coating method, and the material thereof may be an organic dielectric material. In the above method of manufacturing the mask layer, the material of the mask material layer includes polycrystalline stone. 3 The method of manufacturing the mask layer, the part of the mask material layer is removed to include the dry type # shame. For example, the dry remnant method is performed with money gas. In the manufacturing branches of the mask layer, the material of the layer _ includes oxidized eve, nitrite or arsenic oxide. The method for manufacturing the mask layer described above includes a dry-type method. For example, dry residing is carried out using a fluorine-containing gas. The manufacturing layer of the above-mentioned mask layer is further formed with a hard mask layer between the rotating and rotating layers. The above-mentioned mask manufacturing method towel further includes a correction zone: ==' picture, a curtain layer and a cushion layer, and i is cut into a plurality of grooves on the substrate by using a hard mask layer and a cushion layer as a mask. The manufacturing side of the mask layer is further included in the form of a trench after the lining of the mask layer, and the curtain reed is removed. 8 1334172 93146 21748 TW/doc/n The present invention utilizes a protective layer and a (second) photoresist layer as a moment: the opening of the mask layer can _ the width or length of the opening = motion, and must be scaled up or down, Cutting can avoid the expansion of the circle, increase the component layout margin (wind〇w) and reliability. The above and other objects of the present invention, the following specific embodiments, and the accompanying drawings, are described in detail with reference to the accompanying drawings. FIG. - Manufacturing, process stereograms. This embodiment is a manufacturing method in which the mask layer manufacturing method is too π=== π. Of course, the method of the present invention is not limited to the fabrication of the mask layer, and may be performed in an open process. In the present embodiment, the mask material layer 110 is first provided. The cover gas phase material is, for example, polycrystalline, and the manufacturing method is, for example, a chemical conversion = a protective layer 120 is formed on the mask material layer U. The material of the thermostat 20 is, for example, oxidized stone, oxynitride or nitrite, and the form 1 is, for example, a chemical vapor deposition method. Preferably, the protective layer 12 is made of a material having a high defect selection ratio of 盥Η0. For example, if the material of the mask material layer is polycrystalline, then the material f of the protective layer 12G is preferably oxidized stone, eucalyptus or oxynitride. On the eve, it is better for the oxidized stone evening. In one embodiment, the thickness of the mask m is about _ nanometer and the thickness of the protective layer is about 50 nanometers. 9 1334172 93146 21748twf.doc/n Next, a plurality of photoresist layers 225 are formed on the protective layer 12A, and the resist layers 225 are strip-shaped, parallel to each other and twisted in the direction of the turn, and the light is extended, for example, as a positive photoresist. The photoresist layer is formed by performing the development of the pattern after the exposure in the form of a rotation 125 = ing) to form a "full layer _ painted" layer. (: The spacing w between the layers 125 can be Is changed with the mask pattern

Thereafter, referring to Fig. 1B, the photoresist layer (2) is used as a mask, and the protective layer 120 is removed to form a strip-shaped protective layer _. The pitch W' between the protective layers is about the same as the distance w between the photoresist layers 12s. The method of moving the protective layer 120 is, for example, a dry cigarette method. In the embodiment, for example, a fluorine-containing gas, such as a carbon fluoride new body, the partial protective layer 120 is removed, and then the photoresist layer 125 is stripped. The stripping method includes wet photoresist removal and dry removal. Light resistance.

Then, referring to FIG. 1C, a layer of anti-reflective layer 13 is formed, covering the protective layer 120a and the mask material layer 11). The anti-reflective layer 13 is made of a dielectric material such as a spin coating. 'FpI (flu〇rinated polyimide), PAE (p〇lyarylene ether), FLARE (fluorinated poly (aryle^iers), BCB (benzocyclobutene), amorphous carbon, SILK, MSQ, etc. The organic dielectric material' is either a dielectric material such as spin-on glass (SOG). The anti-reflective layer 130 is formed in a conventional manner, for example, by spin coating, and the dielectric material is uniformly coated on the protective layer 120 and the mask material layer 110 to form a flat surface. In one embodiment, the thickness of the antireflective layer 1334172 93146 21748twf.doc/n 13〇 is between about 50 and 60 nanometers.

Next, a photoresist layer 135 is formed on the anti-reflection layer 130, and these photoresist layers 135 are parallel to each other and extend in the γ direction. The photoresist layer 135 is, for example, a positive photoresist. The manufacturing method is, for example, first forming a whole layer of a photoresist material layer (not shown) on the anti-reflective layer 130 by spin coating, and patterning after exposure. The development is performed to form the photoresist layer 135. The pitch L between the photoresist layers 135 may be adjusted in accordance with the mask pattern. Then, referring to FIG. 1D, the photoresist layer 135 is used as a mask to remove the exposed anti-reflection layer 130, leaving the anti-reflection layer i30a. The removal method is, for example, dry etching. In one embodiment, a portion of the anti-reflective layer 130 is removed, for example, by a fluorine-containing gas such as fluorinated %1 (^^) or an oxygen-containing gas such as 〇2; Since the anti-reflection layer 130 is different from the material of the protective layer 12A, the protective layer 12a is still removed while the anti-reflection layer 130 is removed, and the protective layer 120a is still retained.

Then, referring to FIG. 1E, the protective layer 12 〇 & and the photoresist layer 135 are used as a mask to pattern the mask material layer 11 〇 to form a mask layer m having a pattern of openings (10). The method of UG is, for example, a dry-type method, in which the material f of the mask material layer 11G is polycrystalline (IV), for example, a gas containing a gas such as desertified hydrogen as a gas. When the mask layer 110a is missing, the photoresist layer 135 can be applied to the mask material layer 11 由于, and the protective layer is not removed, so that the photoresist layer 93146 can be removed. 21748twf.d〇c/n collectively serves as a mask for etching the mask material layer 110. In addition, since the protective layer 120a is such that the 135 extends in the gamma direction, the relief layer is stretched while the photoresist layers are approximately perpendicular to each other. This causes the ▲ resist layer 135 to appear in the same way as the opening 14 in the Pin # + curtain 11〇a. The moment is the gateway. Among them, the opening of the 14-inch magazine

The dimension in the direction) is the same as the protective layer ^, 4〇 in Y, the length u is on, and the spacing L between ^ is approximately the same. That is, the ==== distance _ photoresist layer 125 (first resist layer 125_^ = == pitch W,) and the first resist layer 135, respectively, can be the width W of the opening 7 and the German. The opening 14 can be a square opening or a rectangular opening. Open σ 14 :

Different ratios can be adjusted. /, visibility W The above formed open mask layer can be applied to the trench of the deep trench dynamic random access memory. Figure 2Α至图迚 is a cross-sectional view of the manufacturing process in which the mask layer is formed in the substrate to form a trench. 9. Referring to FIG. 2A, the mask layer 11A is formed on the substrate 100. Between the substrate 100 and the mask layer 110a, a pad oxide layer 1 2, a pad nitride layer 1 4 and a hard mask layer 106 may be formed from bottom to top. The material of the hard mask layer 1〇6 may be borosilicate glass (BSG). The pad oxide layer 1 垫 2, the pad nitride layer ι 4 and the hard mask layer 1 〇 6 are formed by deposition by chemical vapor deposition. The mask layer 11〇a is used as a mask, and the hard mask layer 1〇6, the pad nitride layer 1〇4 and the pad oxide layer 102 are engraved below. 12 1334172 93146 21748twfdoc/n Then, after the hard mask layer 106, the tantalum nitride layer 104 and the pad oxide layer 102 are patterned with reference to FIG. 2B, the mask layer 110a is removed. Next, a trench 108 is formed in the substrate 100 by using the patterned hard mask layer 106, the pad nitride layer 1〇4, and the pad oxide layer 102 as a mask for etching the substrate 100. In one embodiment, the thickness of the hard mask layer 106 is, for example, 1800 nm, and the depth of the trench 108 is, for example, between 1 〇〇〇 and 3 〇〇〇 nanometers. Since the opening 140 of the mask layer 11a is a rectangular opening, the subsequently formed trench 108 will also be a trench 1?8 having a rectangular opening. Further, the length and width ' of the trench 108 are approximately the same as the length β and the width w of the opening 140 of the mask layer 110a. That is to say, 'as long as the length of the control opening <, the width w' can change the length or width of the section of the trench ι8 to be formed, so as to avoid the generation of the elliptical channel, further control the overlap of the trench 1〇8 with the active area Overlay window. Good control can also be obtained for the area of the capacitor subsequently formed in the trenches 1〇8. The manufacturing method of the opening and the mask layer of the present invention is not limited to the process of using the deep trench type dynamic random access memory, and can be applied to any process requiring opening. The above embodiment of the present invention utilizes two masks to form a mask layer u〇a having a rectangular opening 140. In this way, corner rounding can be avoided due to the limitation of the lithography process, and the pattern size of each opening H0 is uniform, which can ensure the contour of the subsequent etching pattern and contribute to the electrical properties of the element. Performance and reliability. Furthermore, since the width w and the length of the opening 140 can be individually adjusted by the distances W and L of the photoresist layer 125 and the photoresist layer 135, the current component can be further satisfactorily 13 1334172 93146 21748 twf.doc/n Diversified design requirements, various kinds of productions have been made. Although the present invention has been disclosed in the above embodiments, it is not, and the present invention, any one of ordinary skill in the art,

The spirit and scope of the present invention is to be construed as a part of the scope of the invention as defined by the appended claims. | ”·, [Simple description]

1A to 1E are perspective views showing a manufacturing process of a mask layer according to an embodiment of the present invention. 2A to 2B are perspective views showing a manufacturing process of a trench according to an embodiment of the present invention. [Main component symbol description] 100 substrate 102 germanium oxide layer 104 pad nitride layer 106 hard mask layer 108 trench 110 mask material layer: 110a: mask layer 120, 120a: protective layer 125, 135: photoresist layer 130 , 130a: anti-reflection layer 140: opening L: spacing between photoresist layers (135) 1334172

93146 21748twf.doc/n f The length of the opening (140) W: the spacing between the photoresist layers (125) W': the spacing between the protective layers (120a) w: the width of the opening (140) 15

Claims (1)

1334172 93146 21748twf.doc/n X. Patent application scope: 1. A method for manufacturing an opening, which is applicable to a shape of a material layer, comprising: forming a plurality of protective layers on the material layer, the protective layers being mutually Extending in a first direction; forming an anti-reflection layer on the substrate to cover the protective layers; forming a plurality of photoresist layers on the anti-reflective layer, the photoresist layers are mutually lined, to a second a direction extending, wherein the second direction is approximately perpendicular to the direction; Λ removing the exposed anti-reflective layer by using the photoresist layer as a mask; and removing the portion by using the photoresist layer and the protective layer as a mask The second opening is formed in the layer of material. 7 inch increase 2. The shape of the opening in the opening described in the item i of the patent application includes a rectangle. The size of the opening in the second direction, as described in the patent application section, may be changed by the spacing between u. Assembling the layer 4. The size of the opening in the first direction can be changed by the spacing between /, as in the opening of the application. 9 Adjust the light p and layer it 5. As claimed in the patent scope! The antireflection layer has a flat surface as described in the section. The method of clothing, 6. For example, the scope of patent application! The manufacturing method of the anti-reverse (4) manufacturing method of the anti-reverse (IV), wherein the manufacturing method of the opening according to the first aspect of the patent application is the method of manufacturing the opening of the anti-reflection (4) The material includes organic dielectric materials. 8. The method for manufacturing the protective layers as described in the application of the patents of the 巳 第 第 包括 包括 心 心 心 心 心 心 心 心 心 心 心 心 心 心 心 心 心 心 心 该 该 该 该 该 该 该 该 该 该 该 该 该 该Formed parallel to each other; a patterned light limit _ _ 纮 layer extends to the first direction; and Bao He X the patterned touch layer is a turn, transfer (4) the conformal of the second two 2 patent The manufacturing method of the opening according to Item 1, wherein the material of the material layer comprises polycrystalline germanium. 〃 ui0. The manufacturing method of the opening according to the first aspect of the patent application, wherein the method of the method of the partial bag method is in addition to the method of the method of the invention. The dry etching method is carried out by using a bromine-containing gas. 12. For example, the patent application scope 丨3: including the oxidation method = oxygen two, two 2^·= manufacturing method, the second special:: layer description of the mask layer manufacturing method, including: 17 93146 21748twf.doc/n layer; providing-substrate' has formed a layer and a mask material on the substrate to form a protective layer on the mask material layer; a plurality of first-resistors parallel to each other are formed on the sheath layer a layer, the first photoresist layer is extended in a first direction; the first photoresist layer is used as a mask to remove the exposed protective layer; and the first photoresist layer is removed; Forming an anti-reflection layer on the substrate to hold the protective layer; forming a plurality of second photoresist layers on the anti-reflective layer, the layers extending parallel to each other in a second direction, wherein the second & Slightly straightening the first direction; removing the exposed anti-reflective layer by using the second photoresist layer as a mask; and removing a portion of the material layer by using the second photoresist layer and the protective layer as a mask Form a mask layer. 17. The method of fabricating a mask layer of claim 16, wherein the mask layer has an opening. The method of manufacturing a mask layer according to claim 17, wherein the opening has a rectangular shape. 19. The method of fabricating a mask layer according to claim 16, wherein the antireflection layer has a flat surface. 20. The method of producing a mask layer according to claim 16, wherein the method of manufacturing the antireflection layer comprises a spin coating method. 21. The method of fabricating a mask layer according to claim 16, wherein the material of the antireflection layer comprises an organic dielectric material. 18 93146 21748twf.doc/n The manufacturer of the mask layer described in Item 16 of the method, and the material of the mask material layer comprises polysilicon. The method of manufacturing the mask layer as described in claim i6 of the patent application. The method of the mask material layer includes a dry money engraving method. The method of manufacturing the mask layer described in Item 23 of the second paragraph further includes the dry etching method using 3 bromine gas. Method, the manufacturer of the mask layer described in item 16 of the second section 26. Specifically, the method of oxidizing dream, nitriding stone or nitrogen oxidation method, and removing the manufacturing layer of the mask layer described in item The method of the (four) layer includes a dry-laid method. The method of manufacturing the mask layer as described in claim 26 of the patent scope includes the dry rotting method with a fluorine-containing gas. The method of manufacturing the mask layer of the mask layer described in the item. Between the layers of the mask (four), a hard method is formed, including:: two circumferences = a channel and a layer of the mask layer, the mask layer is patterned, and the hard mask layer and the layer are patterned; The curtain layer and the cushion layer are masks, and a trench method is formed in the substrate. Before the manufacturing of the mask layer of the cover layer described in item 29 of February, the hard mask layer is removed. After the ruthenium layer