200834703 93146 21748twf.doc/n 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種半導體元件的製造方法、且特別 是有關於一種開口與罩幕層的製造方法。 【先前技術】 隨著積體電路技術的發展，為強化元件的速度與功 能，積體電路内所要求電晶體的密度也就大大地增加。為 了提南單位面積内的電晶體密度，元件縮小化與積集化是 必然的趨勢。其中最舉足輕重的可說是微影製程。 為了縮小元件尺寸，光罩開口的圖案必須隨之縮小， 方能符合需要。但是，這種具有小尺寸開口圖案的光罩， 其製作費時而困難，尤有甚者，受制於光學散射等因素， 光罩上的直角圖案’並無法百分之百地移轉到光阻圖案 上，而會有角緣圓化(r〇unding)的情形。 以深溝渠式動態隨機存取記憶體(DRAM)為例，此種 記憶體為了降低其橫向尺寸，於基底中形成深溝渠，將電 容器垂直地設置於基底中。由於溝渠的開口小，光阻圖案 很容易產生上述角緣圓化的問題，而形成橢圓形的溝渠。 且由於光阻圖案圓化的程度不一，連帶地會造成各個溝渠 的尺寸參差不齊。這種橢圓形、尺寸不一的溝渠會拉近主 動區上的兀件與電容器之間的距離，大大升高元件短路的 機會，降低了元件的電性表現與可靠度。 —fr方面’由於開口的尺寸是由光罩開σ的圖案來決 疋’右疋要調整開口的寬度或長度，勢必得等比例地放大 5 200834703 93146 21748twldoc/n 或縮小，或者必須另行製作一道光罩。這些方法不是無法 滿足元件佈局上的需求，就是製作過程複雜而代價昂貴， 無論何種方法，都無法滿足元件設計多元化的需求，相當 地不便。 胃 【發明内容】 有鑑於此，本發明提供實施例之目的就是在提供一種 開口的製造綠，可崎免練圓化關題，且能夠各別 地調整開口的寬度或長度。 依照本發明提供實施例之另一目的是提供一種罩幕層 的製造方法，可以形成具有良好減®案的轉層，有利 於後續的钱刻製程。 、本發明提出一種開口的製造方法，適用於材料層中形 成開口。此方法是先於材料層上形成多個保護層，這些保 護層相互平行m向延伸。，於基底上形成抗 ^射層，覆蓋住保護層。於抗反射層上形❹個光阻層， 运些光，層相互平行，往第二方向延伸，其中第二方向約 略垂直第方向。繼而以光阻層為罩幕，移除裸露出之抗 反射層。之後以光阻層與保護層為罩幕，移除部分材料層， 而於材料層中形成開口。 上述開口的製造方法中，開口的形狀包括矩形。 、—上述開口的製造方法中，開口在第二方向上的尺寸可 以藉由調整保護層之間的間距來更改；開口在第—方向上 的尺寸可以藉由調整光阻層之間的間距來更改。 上述開口的»造方法中，抗反射層具有一平坦的表面。 6 200834703 93146 21748twf.doc/n 上述開口的製造方法中，抗反射層的製造方法包括旋 轉塗布法。 上述開口的製造方法中，抗反射層的材質包括有機介 電材料。 置暮口的製造方法中，保護層的製造方法包括先於 …；4"上形成共形的保護層，然後於共形的保護層上 多個圖案化光阻層，這些圖案化光阻層往 弟一方向延伸。接著以圖宰 之共形的保護層。ϋ案化細層為罩幕’移除稞露出 的製造方法中，材料層的材質包括多晶石夕。 製造方法中，移除部分材料層的方 乾式=法。其例如是以含漠氣體進行乾式钱刻法。 上逑開口的製造方法中，保護 氮化砍或氮氧化石夕。 貝匕枯乳化石夕、 ^述開口的製造方法中，移除保護層的 餘刻法，如是以含氟氣體進行乾式#刻法。i括乾式 上述開Π的製造方法巾，材料層是作為 本發明提出一種罩幕層的萝迭—二 1之用。 基底上已形成有墊層與罩幕材二基底’ 些第-光阻層相互平行，絲^夕個弟-光阻層’這 :層為罩幕，移除裸露出之保護層，之後再二弟：先 層:繼而，於基底上形成抗反射層，覆蓋光阻 於抗反射層上形成多個第二光阻層，這些第二光^層ς: 7 200834703 93146 21748twf.doc/n 平行’往第t方向延伸，其中第二方向約略垂直第—方向。 接下來，以第二光阻層為罩幕，移除裸露出之抗反射層。 且層與保護層為罩幕’移除部分罩幕材料層 而形成罩幕層。 上述罩幕層的製造方法中，罩幕層具有一開口。開口 的形狀為矩形。 上述罩幕層的製造方法中，抗反射層具有一平坦的表 面。抗反射層的製造方法例如是旋轉塗布法，其材可 是有機介電材料。 、 上述罩幕層的製造方法中，罩幕材料層的材質包括 晶石夕。 =幕層的製造方法中’移除部分罩幕材料層的方 、匕括乾式侧法。例如是以含漠氣體進行乾式钱刻法。 ^述罩幕層的製造方法中，保護層的材質包括氧化 矽、氮化矽或氮氧化矽。 上述罩幕層的製造方法中，移除保護層的方法包括一 乾式蝕刻法。例如是以含氟氣體進行乾式蝕刻法。 上述罩幕層的製造方法巾’塾層與罩幕材料層， 更包括形成有一層硬罩幕層。 上述罩幕層的製造方法中，更包括於形成 後··先以罩幕層為料，隨化料幕層鱗層，缺^ 硬罩幕層與墊層為罩幕，於基底中形成多個溝渠。、 上途罩幕層的製造方法中’更包括於圖案化硬罩幕肩 與墊層之後、形成溝杀之前，移除罩幕層。 曰 200834703 93146 21748twf.doc/n 本發明利用保護層與（第二）光阻層為罩幕，形成具 有矩形開Π的罩幕層，能夠針對_喊度或長度進行更 動，無須等比例放大或縮小，切尚可避免橢圓形開口的形 成，增加元件佈局的裕度(wind〇w)與可靠度。 “為讓本發明之上述和其他目的、特徵和優點能更明顯 易憧’下域舉實關，並配合職圖式，料細說明如BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of fabricating a semiconductor device, and more particularly to a method of fabricating an opening and a mask layer. [Prior Art] With the development of integrated circuit technology, in order to enhance the speed and function of components, the density of transistors required in integrated circuits is greatly increased. In order to increase the transistor density per unit area, it is an inevitable trend to reduce and accumulate components. The most important of these is the lithography process. In order to reduce the size of the components, the pattern of the reticle opening must be reduced in order to meet the needs. However, such a mask having a small-sized opening pattern is time-consuming and difficult to manufacture, and particularly, due to factors such as optical scattering, the right-angle pattern on the mask cannot be 100% transferred to the photoresist pattern. There will be a case where the corners are rounded (r〇unding). In the case of a deep trench type dynamic random access memory (DRAM), such a memory forms a deep trench in the substrate in order to reduce its lateral dimension, and the capacitor is vertically disposed in the substrate. Since the opening of the trench is small, the photoresist pattern easily causes the rounding of the corners to form an elliptical trench. Moreover, since the degree of rounding of the photoresist pattern is different, the size of each trench may be uneven. Such elliptical and different sizes of trenches will bring the distance between the components on the active region and the capacitor, greatly increasing the chance of short-circuiting of the components and reducing the electrical performance and reliability of the components. -fr aspect 'Because the size of the opening is determined by the pattern of the stencil opening σ', the right side of the opening is to adjust the width or length of the opening, which is bound to be enlarged proportionally or reduced, or must be made separately Photomask. These methods are not incapable of meeting the requirements of component layout, or the manufacturing process is complicated and expensive. No matter what method, it can not meet the diversified requirements of component design, which is quite inconvenient. Stomach [Invention] In view of the above, it is an object of the present invention to provide a manufacturing green for an opening that can be rounded off and can adjust the width or length of the opening individually. Another object of the embodiments provided in accordance with the present invention is to provide a method of fabricating a mask layer that can be formed into a layer having a good reduction, which facilitates subsequent engraving processes. The present invention provides a method of making an opening suitable for forming an opening in a layer of material. In this method, a plurality of protective layers are formed on the material layer, and the protective layers extend in parallel with each other in the m direction. An anti-reflection layer is formed on the substrate to cover the protective layer. A photoresist layer is formed on the anti-reflection layer, and the light is transported, and the layers are parallel to each other and extend in the second direction, wherein the second direction is approximately perpendicular to the first direction. The photoresist layer is then used as a mask to remove the exposed anti-reflective layer. Then, the photoresist layer and the protective layer are used as a mask to remove part of the material layer, and an opening is formed in the material layer. In the above method of manufacturing the opening, the shape of the opening includes a rectangle. In the manufacturing method of the above opening, the size of the opening in the second direction can be changed by adjusting the spacing between the protective layers; the size of the opening in the first direction can be adjusted by adjusting the spacing between the photoresist layers. change. In the above method of opening, the antireflection layer has a flat surface. 6 200834703 93146 21748 twf.doc/n In the method for producing the above opening, the method for producing the antireflection layer includes a spin coating method. In the above method of manufacturing the opening, the material of the antireflection layer includes an organic dielectric material. In the manufacturing method of the gargle, the manufacturing method of the protective layer includes forming a conformal protective layer before the 4; and then patterning the photoresist layer on the conformal protective layer, and the patterned photoresist layer Extend to the younger one. Then take the conformal protective layer of the figure. In the manufacturing method in which the patterned thin layer is the mask removed, the material layer includes polycrystalline stone. In the manufacturing method, the partial dryness of the material layer is removed. It is, for example, a dry money engraving method using a gas containing air. In the manufacturing method of the upper opening, the nitriding or the nitrous oxide is protected. In the manufacturing method of the shellfish, the method of removing the protective layer, for example, the dry etching method using a fluorine-containing gas. i. Dry type The manufacturing method of the above-mentioned opening, the material layer is used as the cover layer of the present invention. The base layer has been formed with a mat layer and a mask base material. The first-photo resist layers are parallel to each other, and the silk layer is a thin layer of the photoresist layer. This layer is a mask to remove the exposed protective layer, and then Second brother: first layer: then, an anti-reflection layer is formed on the substrate, and a plurality of second photoresist layers are formed on the anti-reflection layer, and the second photo-layers are: 7 200834703 93146 21748twf.doc/n Parallel 'Extension in the t-th direction, wherein the second direction is approximately perpendicular to the first direction. Next, the exposed photoresist layer is removed by using the second photoresist layer as a mask. And the layer and the protective layer are a mask to remove a portion of the mask material layer to form a mask layer. In the above method of manufacturing the mask layer, the mask layer has an opening. The shape of the opening is a rectangle. In the above method of manufacturing the mask layer, the antireflection layer has a flat surface. The method for producing the antireflection layer is, for example, a spin coating method, and the material thereof may be an organic dielectric material. In the method for manufacturing the mask layer, the material of the mask material layer includes spar. = In the manufacturing method of the curtain layer, the side of the mask material layer is removed, and the dry side method is included. For example, dry money engraving is carried out with a gas containing air. In the manufacturing method of the mask layer, the material of the protective layer includes ruthenium oxide, tantalum nitride or ruthenium oxynitride. In the above method of manufacturing the mask layer, the method of removing the protective layer includes a dry etching method. For example, a dry etching method using a fluorine-containing gas. The method for manufacturing the mask layer described above includes a layer of a layer of a mask and a layer of a mask material, and further comprises a layer of a hard mask layer. In the above method for manufacturing the mask layer, it is further included in the formation of the mask layer, and the scale layer of the material curtain layer is lacking, and the hard mask layer and the cushion layer are used as masks to form a plurality of layers in the substrate. a ditch. In the manufacturing method of the upper mask layer, the mask layer is removed before the patterning hard mask shoulder and the cushion layer are formed and before the trenching is formed.曰200834703 93146 21748twf.doc/n The invention utilizes a protective layer and a (second) photoresist layer as a mask to form a mask layer having a rectangular opening, which can be modified for the degree of screaming or length without scaling up or Shrinking, cutting can avoid the formation of elliptical openings, increasing the component layout margin (wind〇w) and reliability. "In order to make the above and other objects, features and advantages of the present invention more obvious, it is easy to implement the sub-domain, and cooperate with the job description.
【實施方式】 圖1A至圖压是繪示本發明施 趙圖。本實施例是以罩幕層製造方法 造方法並不限於提出之開口的製 開口的製程Γ 作’也可以用在其他需要形成 幕材’本實施例是先提供罩幕材料層110。罩 護層Ζ的110上形成-層保護層•保 劣女 、如疋氧化石夕、氮氧化秒或氕化矽，JL形 罩幕材=是化學氣相沈積法。賴層⑽較佳是選用』 η〇的材質、1°曰具石f高钱刻選擇比的材質，如罩幕材料層 氮切或12G的材倾料氧化石夕、 50奈米。予度、力為3GG奈米，保護層的厚度约為35〜 200834703 93146 21748twf.doc/n 接著 ，保遷滑120上形成多個光阻層125,這些光 阻層125王條狀，彼此平行並往χ方向延伸。光阻層⑵ 例如是正光阻’其製造方法例如是先以旋轉塗^ coating)方式於保護層12G上形成—整層的光 Ρ 繪示），於曝光後進行圖案的顯影而形成光阻層125曰。1 ^層125之間的間距w可以是隨著光罩圖案的不同而改[Embodiment] Fig. 1A to Fig. 1 are diagrams showing the present invention. In this embodiment, the method of manufacturing the mask layer is not limited to the process of making the opening of the opening. It can also be used in other cases where the curtain material is required. In this embodiment, the mask material layer 110 is provided first. A protective layer is formed on the cover layer 110 of the cover layer. • Inferior women, such as strontium oxide, nitrous oxide or bismuth oxide, JL-shaped curtain material = chemical vapor deposition. The layer (10) is preferably made of η〇 material, 1° cookware stone, and the material of the selection ratio, such as the mask material layer nitrogen cut or 12G material tilting oxide oxide, 50 nm. The degree of force is 3GG nanometer, and the thickness of the protective layer is about 35~200834703 93146 21748twf.doc/n Next, a plurality of photoresist layers 125 are formed on the retentive slide 120, and the photoresist layers 125 are strip-shaped and parallel to each other. And extend in the direction of the 。. The photoresist layer (2) is, for example, a positive photoresist, which is formed by, for example, spin coating on the protective layer 12G, and is formed by a full layer of light. After exposure, the pattern is developed to form a photoresist layer. 125曰. 1 ^ The spacing w between layers 125 can be changed with the mask pattern
之後，請參照圖1B，以光阻層125為罩幕，移除 出之保護層120,形成條狀保護層·，保護層〗施之間 的間距W，約與光阻層12s之間距w等長。移除裸露出之 保遵層12G的方法，例如是乾式_法。在—實施例中， 例如是以含氟氣體，如氟化碳為侧氣體，移除部分保護 層120。繼而，剝除光阻層125，剝除的方法包括濕式去光 阻與乾式去光阻。 而後，請麥照圖ic，形成一層抗反射層13〇，覆蓋住 ，護層120a與罩幕材料層11〇。抗反射層13〇的材質二如 是以旋轉塗布的方式形成的介電材料，如Fpi(flu()rinated polyimide) > PAE(p〇lyarylene ether) ^ FLARE(fluorinated poly(arylethers))、BCB(benzocyclobutene)、非晶系碳 (amorphous carbon)、SILK、MSQ等旋塗式有機介電材料， 或者疋旋塗式玻璃(SOG)之類的介電材料。抗反射層i3〇 是以習知方式形成，例如是以旋轉塗布的方式所形成的， 將上述介電材料均勻地覆蓋塗布於保護層12〇與罩幕材料 層110上，形成一平坦的表面。在一實施例中，抗反射層 200834703 93146 21748tw£doc/n 130的厚度約是介於50〜60奈米之間。 接下來’於抗反射層130上形成光阻層135，這些光 阻層135呈條狀，彼此間相互平行，並且往γ方向延伸。 光阻層135例如是正光阻，其製造方法例如是先以旋轉塗 佈（spin coating)方式於抗反射層130上形成一整層的光 阻材料層（未繪示），於曝光後進行圖案的顯影而形成光 阻層135。光阻層135之間的間距1可以是依照光罩 的不同而調整。 繼而，請參照圖1D，以光阻層135為罩幕，移除裸露 出之抗反射層130,而留下抗反射層13〇a，移除的方法例 ^是乾式蝕刻法。在一實施例中，例如是以含氟氣體，如 氟化碳(CF)，或是含氧氣體，如（^爪2之混合為蝕刻氣體， 移除部分抗反射層130。 二由於抗反射層130與保護層120a的材質不同，在移除 抗反射層130的過程中，並不會一併移除保護層12如，仍 然會保留住保護層120a。 然後，請參照圖1E，以留下之保護層12〇&與光阻層 135為罩幕，圖案化罩幕材料層11〇，形成具有開口 之罩幕層110a。圖案化罩幕材料層11〇的方法，例如是以 乾式钕刻法，舉罩幕材料層11G的材f為多晶㈣例，其 例如是以含溴氣體，如溴化氫作為蝕刻氣體。當然，形成 罩幕層110a之後，便可以將光阻層135移除。 / 由於保護層120a與罩幕材料層11〇具有高度蝕刻選 比，因此，保護層120a不會被移除，而得以與光阻層 11 200834703 93146 21748twf.doc/n 共同作為蝕刻罩幕材料層11〇的罩幕。 ，外’因為保護層120a是往X方向延伸，而光阻層 疋彺Y方向延伸’保護層12()與光阻層135兩者的走 。、-、勺略為互相垂直。這使得罩幕層11Ga中的開口 140，呈 t矩形開σ。其中，開口⑽的寬度W (開π 140在γ 。上的尺寸）與保護層12〇a之間的間距W，大約相等’ ==0的長糾，14〇|χ方向上的尺寸）與光阻 ^之間的間距11大致相同。也就是說m同的光 間距不同的光阻層125 (光阻層125的間距w決定 ^ ΐ/20'的間距W )與光阻層135，便可以分別調整 开0的足度w與長度{〇開口 14〇可以是正方形的開 =可以是長方形的開口。開口 140的細與寬度w 可以進行不同比例的調整。 叙- it成之具有開口的罩幕層可以是應用於深溝渠式 動·機存取記憶體之溝渠的製程上。圖2a至圖2B是繪 不上ί罩幕層應用於基底中形成溝渠的製造流程剖面圖。 租苓照圖2Α，延續圖m之標號 形成於基底獅上。基底刚與罩幕層U〇a之Γ可以是 已ΐΐ有塾氧化層1〇2、塾氮化石夕層104與硬罩 (BS曰G) lit’硬罩幕層⑽的材質可以是硼石夕玻璃 (BSG)。塾氣化層搬、塾氮化石夕層刚 沈積法沈積而形成的。以罩= 刻下方的硬革幕層106、塾氣切層1〇4與整 12 200834703 93146 21748twf.doc/n 然後，請參照圖2B，圖案化硬罩幕層106、墊氮化矽 層104與墊氧化層1〇2之後，再移除罩幕層ll〇a。接著， 利用圖案化的硬罩幕層106、墊氮化矽層104與墊氧化層 102作為蝕刻基底100的罩幕，於基底100中形成溝渠 108。在一實施例中，硬罩幕層106的厚度例如是1800奈 米，溝渠108的深度例如是1000〜3000奈米之間。 由於罩幕層110a的開口 140為矩形開口，因此，後續 形成的溝渠108也會是具有矩形開口的溝渠108。此外， 溝渠108的長度、寬度，與罩幕層ll〇a之開口 140長度£、 寬度w約略相同。也就是說，只要控制開口 14〇長度/、 寬度w ’便能夠改變所欲形成之溝渠1〇8剖面的長度或寬 度，從而得以避免橢圓型溝渠的產生，進一步控制溝渠108 與主動區重疊裕度(overlay window)。對於後續形成於溝渠 108之中的電容面積，也可以獲得良好的控制。 ‘然’本發明之開口、罩幕層的製造方法並不限於使 用在深溝渠式動態隨機存取記憶體的製程中，也可以用在 任何需要形成開口的製程。 本發明上述實施例，利用兩道光罩而形成具有矩形開 口 140的罩幕層11〇a。如此一來，可以避免因微影製程的 限制，而導致角緣圓化(corner rounding)的發生，且各個開 140的圖案尺寸一致，能夠轉保後續餞刻 有助於元件的表現與可靠度。 ^輪^ 再者，由於開口 140的寬度w、長度/可以藉由光阻層 125、光阻層135的間距▽與[各別地進行調整，更能^ 13 200834703 93146 21748twf.d〇c/n 滿求目刖7L件多元化的設計需求，製作出各種尺寸的元件。 雖然本發明已以實施例揭露如上，然其並非用以限定 本發明，任何所屬_領域巾具有財知識者，在 神和範圍内’當可作些許之更動與潤飾，因此 準發保當視後附之中請專利範圍所界定者為After that, referring to FIG. 1B, the photoresist layer 125 is used as a mask, and the protective layer 120 is removed to form a strip-shaped protective layer. The spacing W between the protective layers is about the distance from the photoresist layer 12s. Equal length. The method of removing the exposed layer 12G is, for example, a dry method. In the embodiment, a portion of the protective layer 120 is removed, for example, by using a fluorine-containing gas such as carbon fluoride as a side gas. Then, the photoresist layer 125 is stripped, and the stripping method includes a wet photoresist and a dry photoresist. Then, please take a photo of the anti-reflection layer 13〇, cover the cover layer 120a and the mask material layer 11〇. The anti-reflective layer 13 is made of a dielectric material such as Fpi (flu()rinated polyimide) > PAE (p〇lyarylene ether) ^ FLARE (fluorinated poly (arylethers)), BCB (for example). A benzocyclobutene), an amorphous carbon, a spin-on organic dielectric material such as SILK or MSQ, or a dielectric material such as spin-on glass (SOG). The anti-reflective layer i3 is formed in a conventional manner, for example, by spin coating, and the above dielectric material is uniformly coated on the protective layer 12 and the mask material layer 110 to form a flat surface. . In one embodiment, the thickness of the anti-reflective layer 200834703 93146 21748 tw/doc/n 130 is between about 50 and 60 nanometers. Next, a photoresist layer 135 is formed on the anti-reflection layer 130, and these photoresist layers 135 are strip-shaped, are parallel to each other, and extend in the γ direction. The photoresist layer 135 is, for example, a positive photoresist. The manufacturing method is, for example, first forming a whole layer of a photoresist material layer (not shown) on the anti-reflective layer 130 by spin coating, and patterning after exposure. The development is performed to form the photoresist layer 135. The spacing 1 between the photoresist layers 135 may be adjusted depending on the mask. Then, referring to FIG. 1D, the photoresist layer 135 is used as a mask to remove the exposed anti-reflection layer 130, leaving the anti-reflection layer 13a, which is a dry etching method. In one embodiment, for example, a fluorine-containing gas such as carbon fluoride (CF) or an oxygen-containing gas, such as a mixture of (claw 2) as an etching gas, removes part of the anti-reflection layer 130. The layer 130 is different from the material of the protective layer 120a. During the process of removing the anti-reflective layer 130, the protective layer 12 is not removed, for example, and the protective layer 120a is still retained. Then, please refer to FIG. 1E to stay. The lower protective layer 12〇& and the photoresist layer 135 are masks, and the mask material layer 11 is patterned to form a mask layer 110a having an opening. The method of patterning the mask material layer 11 is, for example, dry In the engraving method, the material f of the mask material layer 11G is a polycrystalline (four) example, which is, for example, a bromine-containing gas such as hydrogen bromide as an etching gas. Of course, after the mask layer 110a is formed, the photoresist layer can be formed. 135. Since the protective layer 120a and the mask material layer 11A have a high etching selectivity, the protective layer 120a is not removed, and is used as an etching together with the photoresist layer 11 200834703 93146 21748twf.doc/n a mask of the mask material layer 11 。., outside 'because the protective layer 120a is in the X direction Extending, and the photoresist layer 疋彺 Y direction extends 'the protective layer 12 () and the photoresist layer 135, the -, the spoon is slightly perpendicular to each other. This makes the opening 140 in the mask layer 11Ga, t rectangular open σ, wherein the width W of the opening (10) (the dimension of the opening π 140 on γ.) and the spacing W between the protective layers 12〇a are approximately equal to a long correction of '==0, and the dimension in the direction of 14〇|χ The spacing 11 between the photoresist and the photoresist ^ is substantially the same. That is to say, the photoresist layer 125 having the same optical spacing of m is the same (the pitch w of the photoresist layer 125 determines the pitch W of ΐ/20') and the photoresist layer 135, and the degree w and length of the 0 can be adjusted separately. {〇 opening 14〇 may be square open = may be a rectangular opening. The thickness and width w of the opening 140 can be adjusted in different proportions. The mask layer with the opening can be applied to the trench of the deep trench type machine access memory. 2a-2B are cross-sectional views showing the manufacturing process for forming a trench in the substrate by the ί mask layer. The rent is shown in Figure 2Α, and the continuation of the figure m is formed on the base lion. The material between the base layer and the mask layer U〇a may be a tantalum oxide layer 1〇2, a tantalum nitride layer 104 and a hard cover (BS曰G) lit' hard mask layer (10) may be made of boron. Xi glass (BSG). The gasification layer is moved and the tantalum nitride layer is deposited by deposition. The hard leather curtain layer 106, the helium gas cutting layer 1〇4 and the whole 12 200834703 93146 21748 twf.doc/n are then engraved with the cover = 2, and the pattern of the hard mask layer 106 and the pad nitride layer 104 is patterned. After the pad oxide layer 1〇2, the mask layer 11〇a is removed. Next, a trench 108 is formed in the substrate 100 by using the patterned hard mask layer 106, the pad nitride layer 104, and the pad oxide layer 102 as a mask for etching the substrate 100. In one embodiment, the thickness of the hard mask layer 106 is, for example, 1800 nm, and the depth of the trench 108 is, for example, between 1000 and 3000 nm. Since the opening 140 of the mask layer 110a is a rectangular opening, the subsequently formed trench 108 will also be a trench 108 having a rectangular opening. Further, the length and width of the trench 108 are approximately the same as the length of the opening 140 of the mask layer 110a and the width w. That is to say, as long as the length 14/width w' of the opening 14 is controlled, the length or width of the section of the trench 1〇8 to be formed can be changed, thereby avoiding the generation of the elliptical trench, and further controlling the overlap of the trench 108 with the active region. Overlay window. Good control can also be obtained for the area of capacitance subsequently formed in the trench 108. The manufacturing method of the opening and the mask layer of the present invention is not limited to the process of using the deep trench type dynamic random access memory, and can be applied to any process requiring opening. In the above embodiment of the present invention, the mask layer 11〇a having the rectangular opening 140 is formed by using two masks. In this way, the rounding process can be avoided due to the limitation of the lithography process, and the pattern of each opening 140 is uniform, and the subsequent engraving can be transferred to contribute to the performance and reliability of the component. . ^轮^ Further, since the width w, length / of the opening 140 can be adjusted by the spacing of the photoresist layer 125 and the photoresist layer 135, [every adjustment is made, it is better to have 13 200834703 93146 21748twf.d〇c/ n Fully looking at the diverse design requirements of 7L pieces, making components of various sizes. Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and any of the _ field towels have financial knowledge, and it is possible to make some changes and refinements within the scope of God and therefore, The scope defined in the patent scope is
【圖式簡單說明】 圖1A至圖1E是繪示本發明一 流程立體圖。 實施例之罩幕層 的製造 施例之溝渠的製 造流 圖2A至圖2B是繪示本發明一實 私立體圖。 【主要元件符號說明】 100 :基底BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1A to Fig. 1E are perspective views showing a flow of the present invention. Manufacture of the mask layer of the embodiment The manufacturing flow of the trench of the embodiment Fig. 2A to Fig. 2B are perspective views of the present invention. [Main component symbol description] 100 : Base
102 ·塾氧化層 104 ··墊氮化矽層 106 ··硬罩幕層 108 :溝渠 110 :罩幕材料層： ll〇a:罩幕層 120、120a :保護層 125、135 :光阻層 130、130a :抗反射層 140 ··開口 L :光阻層（135)之間的間距 14 200834703 93146 21748twf.doc/n f開口（140)的長度 W :光阻層（125)之間的間距 W’ ：保護層（120a)之間的間距 w :開口（140)的寬度102 · tantalum oxide layer 104 · pad nitride layer 106 · hard mask layer 108: trench 110: mask material layer: ll〇a: mask layer 120, 120a: protective layer 125, 135: photoresist layer 130, 130a: anti-reflection layer 140 · · opening L: spacing between photoresist layers (135) 200834703 93146 21748twf.doc/nf length of opening (140) W: spacing between photoresist layers (125) ' : the spacing between the protective layers (120a) w: the width of the opening (140)
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