TWI331358B - Overlay mark, and fabrication and application of the same - Google Patents

Description

1331358 P950250 22737twf.doc/n IX. Description of the Invention: [Technical Field of the Invention] The present invention relates to an overlay mark used in a 1C process, and in particular to check the wafer layer and define one The overlay mark of the alignment accuracy between the lithography processes of the upper wafer layer is formed, and its application in alignment inspection. [Prior Art] As the line width of the 1C process continues to shrink, the alignment between the upper and lower wafer layers becomes more and more important. Therefore, overlapping marks are generally formed on the wafer and used to check the alignment, and the most common overlapping mark is a so-called box-in-box (BIB) type overlapping mark. The conventional BIB overlay mark is applied to the case where the upper and lower wafer layers are each defined by a single mask, including four trenches in a portion of the lower wafer layer, and a rectangular portion above the lower wafer layer. A strip-shaped photoresist pattern formed in a lithography process defining a wafer layer and surrounded by the aforementioned four trenches. Where the '4 trenches are defined by a mask having a corresponding pattern thereon, and the four strips of photoresist pattern are defined by another mask having a corresponding pattern thereon. By measuring the difference in the center position of the two rectangles, the alignment between the upper and lower wafer layers can be known. On the other hand, when the process line width is reduced, the control of the crkicai dimension (CD) is also more important. When the process needs to form two regions with different pattern configurations on the wafer layer, two photomasks are used to respectively perform different exposures of the photoresist layers of the two regions, and the double exposure process is Each zone has a predetermined critical dimension. P950250 22737twf.doc/n When the two exposures of the _ π reticle of the aforementioned lower wafer layer are at least at least included, the use of the above-mentioned overlapping mark is no longer applicable. A field-to-wafer layer c mark is inserted to inspect the pass-patterned degree of alignment, which is used to perform a sequential exposure step between the lithography processes. " With the lithography process, there are two ways to include the above-mentioned overlapping mark formation method. #"Mingya provides a method for checking the alignment, which forms the above-mentioned weight and does not have to be in the case of at least one of the patterning process and the lithography cake as described above. Check the alignment between the lower wafer layer and the aforementioned lithography process. The overlap mark of the present invention includes a first portion of the lower wafer layer having a first direction, a first direction, a second direction, and a second line of the lower line, and includes the lithography process The first X 洵, first Υ, X-th and second γ-direction strip photoresist patterns are located above the wafer layer below the portion and are surrounded by the lower strip pattern. At least one of the foregoing patterning process and lithography process includes two exposures less than 'details' for defining the first component region and the second component region, respectively. When the aforementioned patterning process includes two exposure steps, the first X direction is defined simultaneously with the first Υ downward strip pattern and the second X direction is defined simultaneously with the second Υ downward strip pattern. When the aforementioned lithography process includes two exposure steps, the first X-direction is simultaneously defined with the first-direction strip-shaped photoresist pattern, and the second X-direction and the second-direction strip-shaped photoresist pattern are simultaneously defined. 1331358 P950250 22737twf.doc/n f The method of overlapping markings invented includes the case of the former case: the formation of (4) each of the next _, and the denomination of the f. The method for checking the alignment of the present invention is to measure the position of each strip of light on each of the maps after the second and second marks to estimate the position in the first element region;

Between the wafer layer and the lithography process defining the wafer layer, for example, J: =::: and in each of the above methods, the foregoing lower strip pattern defines the first rectangle, and the strip is described. When the second photoresist is defined as the second moment, the first-second X-down two-bar graph, the intersection of the lines can be, for example, the first-second photoresist-neutral line and the second-second γ-direction strip-shaped pattern. In this case, the lower strip pattern and the strip photoresist pattern define, for example, a first square and a second square, respectively.笛一i outside' in the foregoing lower strip pattern and strip photoresist pattern respectively define the first film ί and the second rectangle, the -x direction and the -¥ downward strip pattern in the step direction and the second γ downward strip pattern Defined by the first step, the -x-direction and the -γ-direction strip-shaped photoresist pattern are defined by the first=step, and the second X-direction and the γ-direction strip-like photoresist pattern are defined by the first light, the first-first In the case where the three exposure steps are used to define the first component area and the second two are used to define the second component area, the first 1331358 P950250 22737 twf.doc/n is better: second, the two sides defined by the lower strip pattern are compared. The fixed gate shape is formed by the first X direction and the two sides of the first photoresist pattern, the two sides of the same rectangle defined by the second 与 and the second 丫 downward strip pattern, and the second rectangle is the second The parent and the two sides defined by the strip photoresist pattern. The two exposure steps are, for example, composition-dual exposure, wherein the first element regions defined by the two exposure steps are, for example, a pattern dense region and a pattern sparse region, a memory cell array region and a periphery. Circuit area. At least one of the patterning process of the lower wafer layer and the lithography process of the wafer layer on the lower wafer layer includes a second exposure process, and the two exposure processes are performed. Divide (4)—In the case of the component area, check the upper and lower wafer layers in the first area; the upward alignment, and check the pair of upper and lower wafer layers in the second element area in the in and out directions. Accuracy. The description and other objects, features and advantages are more obvious, and the preferred embodiments are described below in conjunction with the related embodiments. In the following embodiments, the patterning process of the lower wafer layer is determined. The double exposure step included in the upper layer of the micro-shirts constitutes a double exposure process that defines the same photoresist layer. However, the application of the present invention is not limited to such a f-shaped shape, but can also be applied to the same- The wafer layer is formed by two patterned lights which are successively formed, the layers are defined, and the two patterned lights are respectively defined by the two exposure steps. 8 c S ) 1331358 P950250 22737twf.doc/n Nai 吖 - 八 " 斤 斤 ^ T T T T T T T T T T T T T T T 但 但 但 但 但 但 但 但 但 但 但 但 但 但 但 但 但 但 但 但 但 但 但 但 但 但 但 但 但 但 但 但The first embodiment of the present invention is shown in FIG. 1 to FIG. 1 to illustrate the overlap of the first embodiment of the present invention, and the method of the cap 1 indicates the overlapping mark and the time cost of the j-shaped embodiment. The wafer layer processing process and the definition wafer and the second process each include a double exposure process. The micro-shirt is referred to FIG. 1A' when the first component region of the substrate is in the light-in step, that is, at the same time. A predetermined area in the non-element region exposes a portion of the positive photoresist layer 11 on the lower wafer layer 108 to form a first gamma exposed region 112a and a first X-direction strip-shaped exposed region U2b, wherein the non-typically a scribe line (scribe Line). The first exposure step uses a pattern of the first element region 104 and a pattern corresponding to the first lateral strip-shaped exposure region 112a and the first X-direction strip-shaped exposure region U2b, and The second element area 102 is hidden. The reticle used in the similar exposure step below The pattern design can be deduced in this way, so it will not be described again. For example, the first element region 104 and the second element region 1〇2 are, for example, a pattern collection region, and the other is a pattern sparse region. ^ Cell array region, the pattern sparse region is, for example, a peripheral circuit region, and the pattern of the lower wafer layer is, for example, a pattern of contact window openings. The lower wafer layer is a dielectric layer. Please refer to FIG. 1B, and then use Second mask to the second component area 1〇2

9 (.S 1331358 p950250 22737twf.doc/n) When the second exposure step is performed, that is, simultaneously filling the wafer layer under the portion, the second Y-direction strip exposure region 112c and the second X are formed in the photoresist layer 110. a strip-shaped exposure region 112d. The photoresist in each of the strip-shaped exposed regions 112a-md =: simultaneously with the exposed region in the first second element region 1〇4, 1〇2 element region in a subsequent development process Removed, so in the etching process for forming the first and second element regions 104, 102, and the lower wafer layer pattern, the corresponding first wins the groove U4a and the first X-direction trench U4b. The second Y-direction trench 114c • — the X-direction clear channel U4d is formed in the lower wafer layer 108 of the portion, f 1E does not. wherein the 'different channel and the mb are determined by the first exposure step' (10) and 114 (1 is defined by the second exposure step, 'the second exposure step is part of the patterning process of the lower wafer layer. In addition, the above-mentioned positive aperture and layer 110 can be replaced by a negative photoresist layer, but This = the pattern design of the first-second mask used must be such that the other part of the predetermined area 1〇6 becomes the exposure area. According to FIG. ic, after the upper wafer layer (not shown), the lithography process including the double exposure process is performed. First, a positive photoresist layer 6' is formed, and then the second photomask first element region 104 is used. The third exposure step is performed to simultaneously form the exposed region and the unexposed region of the first element region 104, and the first γ-to-bar two unexposed regions 116a and the first portion are formed in the positive-resist layer 116 of the predetermined region 106. The strip-shaped unexposed area 116b is formed, wherein the pattern corresponding to the predetermined area 1〇6 on the first photomask is as shown by reference numeral 12. / / Please refer to FIG. 1D, and then the second photomask is used to the second element region 102. The fourth exposure step is further performed to simultaneously form the exposed region and the unexposed region of the second element region 102, and the positive resist layer 116 1331358 P950250 22737 twf.doc/n of the other half in the predetermined region 1〇6 is formed to form the second Y To the strip-shaped unexposed area 116c and the second X-direction strip-shaped unexposed area 116d', wherein the pattern of the corresponding predetermined area on the fourth mask is as shown by reference numeral 14. At this time, the strip-shaped unexposed area 116a of the predetermined area 106 is removed. The parts other than ~116d are exposed areas. In addition, the above positive photoresist layer 116 is also The negative photoresist layer is replaced, but the pattern design of the third fourth mask used at this time is such that U6a to 116 (1 becomes an exposure region, and other portions of the predetermined region 106 become unexposed regions. Then development is performed to form The photoresist pattern of the first and second element regions 104, 102, and at the same time, the strip-shaped unexposed regions 116a to 116d are strip-shaped photoresist patterns 118a, 118b, 118c, 118d surrounded by the respective trenches 114a to n4d. As shown in Figure 1E. The four trenches U4a to i14d and the four strip-shaped photoresist patterns 118a to 18d constitute the overlapping marks of the first embodiment. Referring to FIG. 1E, in the above process, the four trenches U4a to U4d define a first rectangle 115, and the four strip-shaped photoresist patterns 118a to U8d define a first rectangle 119. The trenches U4a to 114d and the strip photoresist patterns U8a to n8d=arrange, for example, satisfying the following conditions: when the lower wafer layer is aligned with the lithography process, the first and second γ are directed to the trench U4a, u4c and the first -X intersects the intersection of the lines in the trenches 114b, 114d and the intersection of the second - γ = strip-shaped photoresist patterns 118a, 118e and the second-to-second slant-like strips coincide. In this case, 4 U4a~114 (1 and 4 recording _(10)~ deleting, for example, respectively, the first square and the second square are distinguished. The upper wafer layer is, for example, a metal layer, and at this time, the trench u4a The position of ~u4d can be used to test the reflectivity change of the metal layer. In an implementation, 1331358 P950250 22737twf.doc/n Ϊ upper dielectric layer 'the pattern is the contact window opening pattern, the upper layer 0 layer Then, it is a metal layer, and the opening is made, and some parts are defined as wires. H. Incoming contact, please continue to refer to (4) m, u-stitching mark 104, and the middle and lower wafer layers of the dish. For the following cases, + γ θ, >* can be used in the 兀 兀 104 104 of the * * ' ' ' ' ' ' γ γ γ γ γ γ γ γ γ γ γ γ γ γ γ γ γ γ γ γ γ γ γ γ The distance between the two is compared with the preset standard value. The two-layer pattern and the photoresist pattern above it are in the X-square, the technology/, and the ', the younger brother-X-direction strip-shaped photoresist pattern 118b and the first-- The distance 130 between the fiMbs is compared with the preset standard value, and the alignment of the s圄S闰安螽甘 case in the Y direction under the first element region 104 is known. θθ® The distance between the pattern and the upper photoresist pattern in the second element region 102 is measured, and the distance between the third γ disk 2 18e and the first directional channel 114c is measured by 14°: The alignment of the wafer core 2 and the photoresist pattern above it in the second direction after the second component region is moved; measuring the distance between the second 11 = and the second buffer trench 114d, and the pre-existing private value Comparing, the alignment of the second element pattern with the upper photoresist pattern in the γ direction can be known. The pair between the wafer layer pattern and the wafer pattern above the lithography process is the same as the first embodiment 12 1331358 P950250 22737 twf.doc/n FIGS. 2A to 2D illustrate a method of forming an overlay mark according to a second embodiment of the present invention, wherein FIG. 2D illustrates an example of the overlap mark and its use case. In this embodiment, only the pattern of the lower wafer layer is shown. The process includes a double exposure process, and the exposure step of defining the wafer layer lithography process is only one time, which defines the first and second component regions. π is referred to FIG. 2A 'in the first component region 204 of the substrate. When using the first exposure step of the photomask, it is located at the same time A first strip-shaped exposed area 212a and a first X-direction strip-shaped exposed area 212b are formed in a portion of the positive photoresist layer 21 on the lower wafer layer 2〇8 in the predetermined region 206 of the element region. Referring to FIG. 2B And then performing a second exposure step on the second element region 2〇2 using the second mask, that is, simultaneously forming a second Y-direction strip exposure region in the positive photoresist layer 210 on the portion of the lower wafer layer 2〇8 212c and the second X-direction strip exposure region 212 (1. Each exposure region 212 & 〜212 (the photoresist material in 1 will be in the subsequent development process with the first second component region 2 〇 4, 2 〇 2 components The exposed regions in the regions are simultaneously removed, so that in the subsequent process for forming the wafer layer pattern under the first second device regions 204, 202, the corresponding first γ = trench 214a, first X-direction The trench 214b, the second gamma directional trench 21, and the first X-direction trench 214d may be formed in the portion of the lower wafer layer 2〇8, such as 21). Wherein, the trenches 214a and 214b are defined by a first exposure step, and the trenches 214c and 214d are defined by a second exposure step, which is part of a patterning process of the lower wafer layer. In addition, the positive photoresist layer 210 may be replaced by a negative photoresist layer, and the process variation thereof is as in the case of the first embodiment. Referring to FIG. 2C, after an upper wafer layer (not shown) is formed, 13 1331358 P950250 22737twfdoc/n another positive photoresist layer is formed, and the third photomask is used to the first second component region 204, 2〇2. Performing a third exposure step to simultaneously form the exposed regions and unexposed regions of the first second element region 202, and forming a first Y-direction strip-shaped unexposed region 216a in the positive photoresist layer in the predetermined region 200, first The strip-shaped unexposed regions 216b, the second gamma-direction strip-unexposed regions 216c, and the second-direction strip-shaped unexposed regions 216d. At this time, portions other than the strip-shaped unexposed areas 216a to 216d of the predetermined area 206 are exposed areas. Alternatively, the positive photoresist layer may be replaced by a negative photoresist layer, however, the pattern of the photomask used in the case must be complementary to the pattern of the third photomask described above. Then, development is performed to form a photoresist pattern of the first second element regions 2〇4, 2〇2, and at the same time, the strip-shaped unexposed regions 216a to 216d are strip-shaped photoresist patterns. Shapes 218a, 21, 218c, 218d It is surrounded by the aforementioned ditches 214a~2Md, as shown in Fig. 2D. The four trenches 214a to 214d and the four strip-shaped photoresist patterns 218a to 218d constitute the overlapping marks of the second embodiment. Referring to FIG. 2D, in the above process, the four trenches 214a to 2Md define a first rectangle 215, and the four strip photoresist patterns 218a to 218d define a second rectangle 219. The positional arrangement of the trenches 214a to 214d and the strip-shaped photoresist patterns 218a to 218d satisfies, for example, the following conditions: when the lower wafer layer is aligned with the lithography process king, the younger brother _ a Y-direction ditch 214a, 214c The intersection of the line with the line of the first and second X-direction trenches 214b, 214d and the line of the first and second γ-direction strip-shaped photoresist patterns 218a, 218c and the first and second strip-shaped photoresist patterns 218b, 218d The intersection of the middle lines coincides. In this case, the four trenches 214a to 214d and the four strip-shaped photoresist patterns 218a to 218d define, for example, a first square and a second square, respectively. 1331358 P950250 22737twfdoc / n Ming Mai photo 2D' with the above overlapping marks to estimate the alignment between the lower wafer layer pattern and the upper photoresist pattern of the first and second element regions 204, 202, for example, the lower Narrator. In terms of the alignment of the first element region tearing, the _ distance trace of the first and second γ-direction strip-shaped photoresist patterns 218a, 218c and the first-γ-direction ditches 214a are further determined by the preset The value comparison can be used to know the alignment of the wafer layer pattern under the first component region and the "alignment of the upper photoresist pattern in the X direction; measurement first - second

= 218b, 218d, the distance 225 between the line 225 and the -x to the ditches 21, and then compared with the preset fresh air, the lower wafer layer pattern and the upper photoresist pattern in the 丫 direction In terms of the alignment of the second element region 2〇2, the measuring element [1 202^240 ' is compared with the preset standard value] to know the wafer layer pattern below the second = piece 202

== The first-second X-direction strip-shaped photoresist diagram == ^, ' 彳, the younger one to the ditch 214 (the distance between the two is 250, the standard value of the true disk box = the second component can be known The area nj is the first-second element area, the 2G2 picture = the alignment degree between the wafer layer patterns defined by the alignment degree I · ~, the third embodiment of the lithography system 3A to 3D illustrate a superimposition 15 1331358 P950250 22737 twf.doc/n method of the third embodiment of the present invention, wherein FIG. 3D I shows an example of the overlapping mark and its use case. In this embodiment, only the definition is The lithography process of the wafer layer includes a double exposure process, and the exposure process of the patterning process of the lower wafer layer is only one time, which defines the first and second component regions.

Referring to FIG. 3A, when the first second element region 3〇4, 3〇2 is subjected to exposure exposure using the photomask, (4) a portion of the lower wafer layer in the predetermined region 306 in the non-element region. A first Y-direction strip-shaped exposure region 312a, a first-direction strip-shaped exposure region 312, a second Y-direction strip-shaped exposure region 312c, and a second X-direction strip-shaped exposure region 312d are formed in the positive photoresist layer 31. The photoresist material of 312a^ci t is simultaneously removed in the subsequent development process in the younger-first read zone 3〇4, the exposed area in the transfer element region. Therefore, in the side process for forming the first and second element regions 3〇4 3〇2 and the circular layer pattern, the corresponding first-Y direction trench 314a, second = 2 = :?, second Y To the trench 3MC and the second X-channel trench _ : open: the wafer layer 3 〇 8 + in this portion, as shown in 3d. Layer 310 can also be replaced with a negative photoresist layer, however, the pattern of the mask used at this time must be complementary to the pattern of the first mask described above. ^^, after the upper wafer layer (not shown), then enter, and then use the second mask pair _ 2 3 = ^ _ = = = into the first element area 304 exposure area and = = The first and the first-perforated strip-shaped unexposed regions are formed in the unexposed inner-half positive photoresist layer 316, and the pattern of the corresponding predetermined region 306 is shown as the label 32.

S 16 1331358 * . P950250 22737twf.d〇c/n Referring to FIG. 3C, the third exposure step is performed on the second element region 3〇2 using the third mask to simultaneously form the exposure of the second element region 3〇2. a second Y-direction strip unexposed area 316c and a second X-direction strip unexposed area 316d' are formed in the positive and negative resistive layers 316 of the other half of the predetermined area 306, wherein the third mask corresponds The pattern of the predetermined area 3〇6 is as indicated by reference numeral 34. At this time, portions other than the strip-shaped unexposed regions 316a to 316d of the predetermined region 306 are exposed regions. • development is then performed to form the photoresist pattern ' of the first second element regions 304, 302 and simultaneously strip-shaped unexposed regions 316a-316 (1 become strip-shaped photoresist patterns 318a, 318b, 318c, 318d, which are Each of the trenches 314a to 314d is surrounded, as shown in Fig. 3D. The four trenches 314a to 314d and the four strip photoresist patterns 318a to 318d constitute the overlapping marks of the third embodiment. Referring to Fig. 3D, in the above process The four trenches 314a to 3Md define a first rectangle 315, and the four strip photoresist patterns 318a to 318d define a first moment opening > 319. The positions of the trenches 314a to 314d and the strip photoresist patterns 3i8a to 3i8d The arrangement satisfies, for example, the following conditions: when the lower wafer layer is completely aligned with the lithography process, the intersection of the line between the first and second γ-direction trenches 314a, 314c and the first first X-direction trenches 314b, 314d A line connecting the second γ-direction strip-shaped photoresist patterns 318a and 318c to the intersection of the lines of the first and second-direction strip-shaped photoresist patterns 318b and 318d. In this case, the four trenches 314a to 314d and The four strip photoresist patterns 318a to 318d define, for example, a first square and a second square, respectively. Shaped. Please continue with reference to FIG. 3 D 'to the overlapping each mark being aligned with the inferred wafer layer pattern thereabove a second photoresist pattern to the first element region 304,302 171,331,358

The method of 1 I P950250 22737twf.doc/n is, for example, the following. In terms of the alignment of the first element region 3〇4, the distance between the first Y-direction strip-shaped photoresist pattern 318a and the first second γ-to-ditch 314a, 314c center line 327 is measured, and then The preset standard value comparison ' can be used to know the alignment degree of the photoresist pattern of the first component region 3〇4 and the lower wafer layer pattern in the X direction; and measure the first-direction strip photoresist pattern 318b The distance between the first and second ditches, the midline 329 of 3Md, is said to be 'the first fresh taste, and the first is known.

The alignment of the photoresist pattern of the region 304 with the wafer layer pattern below it in the gamma direction. In terms of the alignment degree of the second element region 3G2, the distance 340 between the second lateral strip-shaped photoresist pattern 318c and the first second γ to the trench line 31, such as the center line milk, is measured, and then Comparing the fresh values, the alignment of the photoresist pattern of the 3G2 in the second region with the wafer layer pattern below the γ direction can be known; the amount: the strip-shaped photoresist _ simple and the first first trench The distance 350 between the center lines 329 of the wood 314b, 314d, and then the value λ, can be used to know the alignment of the photoresist pattern of the second element region 302 and the wafer layer pattern in the γ direction. . The alignment between the lower wafer layer pattern of these alignment members 1 ίί04, 302 and the wafer layer pattern over the front cover.曰η Μ Μ 明 Μ Μ Μ 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用The process defines the alignment of the lower and second component regions, respectively, to check the alignment of the upper and lower 曰曰® layers in the first component region in both directions, and check the second component region 18 1331358 P950250 22737twf.doc/n The alignment of the upper and lower wafer layers in both the x and Y directions. The invention is disclosed in the above preferred embodiments, but it is not intended to be used in the scope of the invention, and the scope of the invention is defined by the scope of the application. [Simple description of the map]

Fig. 1 Α 1 1 Ε green display (4) - a method of forming an overlap mark of an embodiment, wherein Fig. 1 Ε shows an example of the overlap mark and its use case. 2A to 2D illustrate a method of forming an overlay mark according to a second embodiment of the present invention, in which the towel® 2D complements the overlap mark and an example of the job. 3A to 3D illustrate a method of forming an overlap mark according to a third embodiment of the present invention, and Fig. 3D shows an example of the overlap mark and its use case. [Description of main component symbols] 12, 14, 32, 34: reticle pattern 102/202/302, 104/204/304: second component area, first-element area 106, 206, 306: predetermined area

108, 208, 308: part of the lower wafer layers 110, 116, 210, 310, 316: positive photoresist layers 112a, 212a, 312a: first vertical strip exposure regions 112b, 212b, 312b: first X-direction strips Exposure regions 112c, 212c, 312c. Di-Y-direction strip exposure regions 112d, 212d, 312d: second X-direction strip exposure regions 114a, 214a, 314a: first Y-direction trenches 114b, 214b, 314b: first X-direction ditches 19 1331358 P950250 22737twf.doc/n 114c, 214c, 314c: second. Y-direction grooves 114d, 214d, 314d: second X-direction ditches 115, 215, 315: second rectangles 116a, 216a, 316a: First Y-direction strip-shaped unexposed areas 116b, 216b, 316b: first X-direction strip-shaped unexposed areas 116c, 216c, 316c: second Y-direction strip-shaped unexposed areas 116d, 216d, 316d: second X-direction strip Unexposed areas 118a, 218a, 318a: first Y-direction strip photoresist patterns b 8b, 218b, 318b. First X-direction strip-shaped photoresist patterns 118c, 218c, 318c: second Y-direction strip-shaped photoresist pattern 118d, 218d, 318d · 苐 two X-direction strip photoresist patterns 119, 219, 319: first rectangle 120, 130, 140, 150, 220, 230, 240, 250, 320, 330, 340, 350: distance 223 , 225, 327, 329: midline Ι-Γ, ΙΙ-ΙΓ: section line 20

Claims (1)

99-7-29 99-7-29 Month&gt; Correction 3 Filling the patent application case 1 · A round and spicy 4 stack mark for checking the process of the process - the process a portion of the layer-to-shadow process between which has a 2nd-th-Y downward strip pattern, a second pattern = a second Y downward strip pattern, and a gate strip pattern and - by the lithography process Forming a first direction and a second-direction strip-shaped photoresist layer above and surrounded by the lower strip-shaped patterns, at least two of which are included in the undercut and the undercut process The two exposure steps 'knife are used to define - the first component area and the second component area; S the patterning process includes two exposure steps · &lt; strip graphics and the first - Υ downward recording _ Defining, i the downward strip pattern is defined simultaneously with the second down strip pattern; and when the lithography process comprises two exposure steps, the first photoresist pattern and the first gamma strip photoresist _ Bribe definition, and the first and second directions are defined by the strip-shaped photoresist pattern and the fringe. 2. The overlay mark of claim 1, wherein each of the lower strip patterns comprises a trench in the lower wafer layer. 3. The overlay mark of claim 1, wherein the lower strip patterns define a first rectangle, and the strip pattern patterns define a second rectangle. 4. The overlap mark according to item 3 of the patent application scope, wherein the 21st line between the X 1331358 99-7-29-X downward strip pattern and the second X-down strip pattern is associated with the first Y a center line between the downward strip pattern and the second γ-down strip pattern has a first intersection, a center line between the first X-direction strip-shaped photoresist pattern and the second-direction strip-shaped photoresist pattern Forming a second intersection with the center line between the first γ-direction strip-shaped photoresist pattern and the second γ-direction strip-shaped photoresist pattern, when the lower wafer layer is completely aligned with the lithography process, the first Two intersections and the; one intersection coincides. 5. The overlay mark of claim 4, wherein the first rectangle and the second rectangle are square when the lower wafer layer is fully aligned with the lithography process. </ RTI> </ RTI> </ RTI> </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> </ RTI> <RTIgt; The pattern is determined by a second exposure step f, the first X-direction and the first γ-direction strip-shaped photoresist pattern are defined by a third exposure step ′ and the second X-direction and second bis-direction strip-shaped photoresist pattern steps are defined The first and third exposure steps are for defining the first component region, the second and fourth exposure steps are for defining the second component region; and, the first rectangle is the first component region; The two sides of the X-direction and the -Y-down bar graph correspond to the two sides defined by the first pupil and the first photoresist pattern, and the money of the I rectangle is the second 3 and the first, γ The two sides defined by the downward stripe pattern correspond to the two sides of the second rectangle and the second side of the second X-ray. 7. The overlap mark as described in claim 1 wherein the two 22 99-7-29 exposure steps constitute a double exposure process. 8. The overlay mark of claim 7, wherein the first element area is a pattern of the pool area. The first element area is a pattern sparse area. The overlay mark of claim 8, wherein the pattern dense area is a memory cell array area, and the pattern is sparse area side circuit area. υ υ — — — — — — — 悝 悝 悝 悝 悝 悝 悝 悝 悝 悝 悝 悝 悝 悝 悝 悝 悝 悝 悝 悝 悝 悝 悝 悝 悝 悝 悝 悝 悝 悝 悝 悝 悝 悝 悝 悝 悝 悝 悝The forming method includes: forming, in the patterning process, an X-down bar-shaped pattern, a first-down bar-shaped pattern, and a second ridge in a portion of the lower wafer layer. a lower strip pattern and a second second downward strip pattern; and a lithography process, forming a shape above the lower wafer layer of the portion... direction: first direction, second direction and a second gamma-ray strip first-resistance pattern surrounded by the lower strip-like patterns, wherein the patterning process and the lithography process are respectively exposed to a sub-exposure (4), and the two-dimensional process includes two exposures. When the step is 'the first x down 2'::;: the downward bar pattern is defined at the same time, and the second χ 该 Υ Υ Υ Υ Υ Υ Υ Υ Υ Υ ; ; ; Υ Υ Υ Υ Υ = = = = = = = = = = The first twisted strip X-shaped strip-shaped strip light __ (four), and the second 11 second Y-direction strip photoresist pattern are simultaneously defined. n. The overlap mark of claim 10, wherein the lower strip pattern includes a trench in the lower wafer layer. 12. The method of reading an overlay mark as described in claim 1G, wherein the lower strip patterns define n rectangles, and the strips of light P and the pattern define a second rectangle. 13. The method of forming an overlap mark according to claim 12, wherein a center line between the first-X downward strip pattern and the lower strip pattern and the first-down strip pattern and the The center line between the second γ-down strip patterns has a first-intersection point, the first-direction strip-shaped photoresist pattern and the _ center line of the second X-direction strip-shaped photoresist pattern and the first direction The center line between the strip-shaped photoresist pattern and the second-direction strip-shaped photoresist pattern has a second intersection point 'pour-off crystal' and the second intersection of the ray-forming process coincides with the first intersection. Axe 14. The overlapping method as described in claim 13 of the patent application, wherein when the lower wafer layer and the forehead are completely rectangular and the second rectangle is square β, the method described in item 12 of Lifan 1 The forming of the overlapping mark is defined by the first exposure step: 3: the second downward bar pattern is defined by the second exposure step, and the second X and third exposure step steps are defined a 帛-γ-direction strip light _-shaped fourth exposure light step is used to define the first element region, and the second and fourth (fourth) light steps are to sigh the second element region; and 24-L JJ0 -L JJ0 99-7-29 defines the two sides corresponding to the shape of the second strip and the second rectangle of the CtT first rectangle from the second X to the second X and the first two sides corresponding to the second rectangle i ^ Apply for both sides of the park. Method, (4) The formation of the overlap mark described in item 16 is - pattern = 7° piece area is - pattern dense area 'The second element = method, Hlf" range 17th item of the overlap mark is formed for two weeks ^Electrical = the cluster is a memory cell array, and the method of pattern sparseness is used to check between a patterning process: a circular layer and a lithography process on a wafer layer At least one of the patterning process and the lithography process includes a re-exposure process including two exposure steps for defining a first element region and a second element region, respectively. The method includes: forming an overlap mark, the step of: forming, in the patterning process, forming a first X-down strip pattern, a first γ-down strip pattern, and a portion of the lower wafer layer a second x-down strip pattern and a second γ-down strip pattern; and in the lithography process, the wafer is first placed on the lower portion of the lower wafer layer 25 99-7-29 To, a first..., a second X direction, and a second = strip photoresist pattern, Surrounded by the lower strips, the patterning process of Futian includes a double exposure process, the two strip patterns are defined with the first γ downward strip image, and the 2nd X down strip pattern and the second The downward strip pattern is defined, and when the lithography process comprises a double exposure process, the 2-direction strip light _ shape is synonymous with the first γ-strip strip light _ shape and the second slant strip The photoresist pattern is defined simultaneously with the second photoresist pattern; and the strip strip photoresist pattern is estimated to be different from each of the lower strip patterns in a circular layer of the first element region and the second element region. The Samin's j-V is 曰 ,, 1. =X ~ 'TIHE 咏 咏 一 凡 一 一 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 ^ 19 wherein the parent K strip pattern includes a trench in the lower wafer layer. 21. The inspection alignment product as described in claim 19, wherein the lower strips define a first rectangle. And the strip-shaped first-resistance pattern defines a second rectangle. - Strips 22 · Check the alignment degree as in the scope of claim 21 The middle line of the first-x downward strip pattern and the second X-down strip pattern 4 has a first intersection with the mid-line of the first-Y downward button and the second, the first... a neutral line between the shape and the second X-direction strip photoresist pattern and a center line between the first Y-direction box-shaped photoresist pattern and the second γ-direction strip-shaped photoresist pattern has a value of 26 1331358 99-7-29 Second intersection point 'When the underlying 8-layer micro-shadow material is fully aligned, the second intersection point coincides with the first intersection point. μ 23. For example, the inspection pair described in claim 22 The method of accuracy 'where the rectangle and the second rectangle are both square when the lower wafer layer is completely aligned with the lithography process. Λ , 24. 专 专 专 _ 韵 韵 韵 韵 韵 的 的, wherein the first X direction and the second γ are defined by a first exposure step defined by the first exposure step, wherein the first X direction and the second γ are defined by a first exposure step, And the second X-direction and the third exposure step are defined; the fourth exposure to the strip-shaped photoresist pattern is used to define the first-element region, and the first-rectangle By defining the second component region; and the two sides of the derogation correspond to the first direction and the first Υ downward strip pattern, the first resistance pattern is formed by the first 与 direction and the first 条 条 ^ The lower strip (four) is bounded by the second side and the second side corresponding to the two sides defined by the strip photoresist pattern. 27