1331125 (1) 玖、發明說明 【發明所屬之技術領域】 本發明是關於根據在基板上均等地形成矽等的薄膜之 電漿CVD的薄膜形成裝置的基板運送裝置。 【先前技術】 太陽電池是作爲淸淨的能源受到注目而被期待，爲了 謀求其普及，成本還原是不可欠缺的。因此，強力期望： 鲁 藉由在大型基板形成均等膜厚的矽膜且以一次的操作在複 數個基板上形成矽膜來達到高量產性的薄膜形成裝置。對 於如矽膜之薄膜的形成，將平行平板型（容量結合型）的 電漿CVD裝置實用化，但由於通常僅可處理一片的基板 ’故處理能力低，又，欲同時處理複數基板時則會有裝置 極端大型化之問題產生。又，基板大型化的同時，所形成 .的薄膜之膜厚均等性顯著降低，而會變得無法獲得期望的 特性之太陽電池的問題產生。 # 爲了進行膜厚均等性之高薄膜製作，須要在基板全體 形成均等密度的電漿，因此，進行了各種檢討。但，在平 行平板型電極方式，當基板大型化時，形成均等密度之電 漿並非容易。即’在平行平板型電極，爲了形成均等密度 之電漿，須要在基板全體區域精度良好地維持2個電極間 距離而加以配置，但此作業並不容易，當基板大型化則變 得更加困難。又’在平行平板型電極方式，受到投入高頻 之電極與位於接地電位之對向電極及成膜室壁之間的放電 -5- (2) (2)1331125 ，在電極產生自己偏移電位，因此，會有在電漿密度產生 分散之問題（例如，美國專利第5 4 3 7 8 9 5號）。且，當電 極變大時，在其表面會產生駐波，因此會有電漿分佈之情 況產生。 因此，提案有：電漿維持機構與平行平板型電極方式 完全不同，不會引起上述平行平板型電極方式固有的電極 間距離精度獲電極之自我偏移等的問題，並且採用使用對 於高速成膜有利的VHF帶之高頻能產生高電漿密度之誘 導結合型電極之電漿CVD法。 但，例如，具有梯子形狀或折彎成鋸齒形狀之上述誘 導結合型電極是當對應於基板的大型化而變大時，則電流 經過路徑不易變得均等’又，會有在無法預期的場所部分 地產生駐波之問題，因此，不易將電漿密度作成均等，以 以往的電極構造對應大面積基板是非常困難的。 因此，開發出不會將裝置大型化，而可有效率地在大 型基板上形成均等厚度的矽膜，並且可在複數個基板同時 地形成矽膜而提昇生產性之薄膜形成裝置，此薄膜形成裝 置是如第1及第2圖所示，在成膜室1的隔壁2之內部， 配置有複數行的（在第2圖的例子爲3行）誘導結合型電 極群3A (在第1圖，由6個誘導結合型電極3構成一個 誘導結合型電極群3A)。 前述各誘導結合型電極3是藉由供電部3a與接地部 3b形成大致呈U字狀’藉由其大致呈ϋ字狀的面隔著所 需間隔配置於相同平面內’形成因應了基板4之電極行。 -6- (3) (3)1331125 前述大致呈ϋ字狀的各誘導結合型電極3之供電部 3a的前端是連接於設在成膜室1的上部之隔壁2的供電 側連接器5的供電內導體，該供電內導體是連接於供給連 接在高頻電源6的同軸電纜7的高頻電力之芯體側。又， 各誘導結合型電極3的與接地部3b之前端是藉由設在前 述隔壁2的接地側連接器8的接地導體來接地於隔壁2。 且’前述供電側連接器5的外導體接地於隔壁2，藉由此 外導體連接於披覆前述同軸電纜7的芯體之外披覆體側， 形成接地電位，進行高頻電力的屏蔽接地。此時，爲了對 相鄰的誘導結合型電極3、3之供電部3 a供給相反位相的 高頻，而自供電側連接器5與高頻電源6之間配置位相移 動器（未圖示），且在高頻電源6連結功能產生器（未圖 示），在由高頻電源6所輸出的高頻電力施加期望的AM 調變。 前述薄膜形成裝置是如第1圖所示，其結構爲因應基 板4的寬度而排列誘導結合型電極3之電極行（誘導結合 型電極群3 A )如第2圖所示地隔著間隔排配置有複數行 ，在各誘導結合型電極3的兩側配置基板4者，藉此如此 結構，能夠在多數個基板4上（在第2圖的例子爲6片） 同時地形成薄膜，可提升生產性。前述成膜室1的前壁 2a (第1圖的左側壁）是構成可進行開關，藉由開放前壁 2a，可將前述基板4搬入至基板支承台9，或由基板支承 台9上取出。 且，前述成膜室1的內部是連接於真空排氣裝置 (4) (4)1331125 ，而內部被真空排氣，因此，前述成膜室1構成氣密。 且，在前述接地側連接器8的外部連接有氣體供給源 11，通過由前述誘導結合型電極3的管所構成之與接地部 3b的內部，能對於成膜室1的內部供給矽烷等的成膜用 之原料氣體1 2。 在如第1及第2圖所示的薄膜形成裝置，在複數行配 置之誘導結合型電極3的兩側配置基板4，藉由真空排氣 裝置10將成膜室1內保持成真空，且由氣體供給源11供 給矽烷等的原料氣體12，當在此狀態下藉由高頻電源6 將高頻電力供給至誘導結合型電極3，使在供電部3a與 與接地部3b的周圍產生電漿時，可在基板4的表面形成 均等的矽之薄膜。 再者，作爲顯示如前述之薄膜形成裝置，有例如曰本 特開2002-6965 3號公報之專利文獻。 然，在以如第1及第2圖所示的成膜室1作爲單體而 設置之薄膜形成裝置，由於不易將在基板4的表面形成薄 膜之作業加以自動化，故在以往，例如如第3圖所示，提 案以下的薄膜形成裝置：其配置有：基板裝設部13;具 有基板加熱裝置14之加熱部15;具有能與均熱器16及 真空排氣裝置17開關的外氣導入口 18a之負載鎖定室18 :具有誘導結合型電極3、真空排氣裝置10、氣體供給源 11及溫度調節裝置19之成膜室1;具有能與真空排氣裝 置20開關之外氣導入口 21a的無負載鎖定室21:以及基 板取出部22，並且將可載置前述基板4的運送台車23由 -8- (5) (5)1331125 前述基板裝設部13經由加熱部15與負載鎖定室18朝成 膜室1行進而搬入，經過無負載鎖定室2 1使其朝基板取 出部22移動，而再次返回至前述基板裝設部13。再者， 在第3圖中，24a及24e分別爲用來由外部遮斷負載與無 負載之閘閥。又在第3圖中，24b、24c、24d是用來相互 地遮斷負載鎖定室1 8、成膜室1及無負載鎖定室2 1之閘 閥。 當在前述基板4的表面形成薄膜之際，首先，在基板 · 裝設部13，將基板4載置於運送台車23上。 已載置於前述運送台車23上的基板4是藉由打開閘 閥24a搬入至加熱部15內，關閉閘閥24a後，藉由基板 加熱裝置1 4均等地加熱至預定溫度。 受到前述加熱部1 5所加熱的基板4是藉由打開閘閥 24b搬入至負載鎖定室18內，關閉閘閥24b後，藉由真 空排氣裝置17將負載鎖定室18內減壓，並且藉由均熱器 16將前述基板4的溫度維持在預定溫度。 馨 接著，前述基板4藉由打開閘閥24c搬入至成膜室1 內，關閉閘閥2k後，在藉由真空排氣裝置1 0保持預定 的壓力，並且藉由氣體供給源11供給了矽烷等的原料氣 體12之狀態下，以使誘導結合型電極3作動，來在基板 4的表面形成矽膜。 當結束對於前述基板4之成膜時，則藉由打開閘閥 2 4d將基板4搬出至無負載鎖定室21。此時，無負載鎖定 室21的內部是以真空排氣裝置20預先減壓成與前述成膜 -9- (6) (6)1331125 室1相同之負壓，當基板4被搬出於無負載鎖定室21的 話則關閉閘閥24d $ 然後，打開外氣導入口 21a’將無負載鎖定室21升 壓至大氣壓後，打開閘閥24 e。在該狀態下’載置於運送 台車23的基板4搬出至外部。又，運送台車23移動於基 板取出部22，取出已經成膜完畢之基板4而加以回收。 再者，當在前述已被減壓的負載鎖定室18內搬入下一個 基板4之際，打開外氣導入口 18a，將負載鎖定室18升 壓至大氣壓後，打開閘閥24b。 在此，作爲使用於如第3圖所示的薄膜形成裝置之基 板運送裝置的運送台車23是在以往的情況，如第4及第 5圖所示，具有可自由轉動於導軌25上的車輪26之台車 本體2 7的上面，朝其行進方向隔著所需間隔立設支柱28 ，在該支柱28的誘導結合型電極3側之面，藉由安裝卡 止基板4的爪構件29，來在前述支柱28間架設基板4地 加以裝設’而該基板4表面與誘導結合型電極3相對向。 在如第4圖所示的例子’由於在成膜室1內，排列著 誘導結合型電極3的電極行朝與運送台車23的行進方向 呈直角的水平方向隔著間隔配置複數行（在第4圖的例子 爲3行），故基板4的表面對向在各誘導結合型電極3的 電極行的兩側面地，於運送台車23的台車本體27上立設 複數組（在第4圖的例子爲6組）支柱2 8。 又，在前述運送台車23的台車本體27之下面中央部 ’設置朝其行進方向延伸的支架30，嚙合於該支架30且 -10 - (7) (7)1331125 馬達等的驅動裝置31經由旋轉軸32旋轉驅動之小齒輪 33是在運送台車23的行進路徑途中，以較台車本體27 的長度若干短的間距加以配置著，藉由依次驅動前述驅動 裝置31，運送台車23被送出而行進。再者，在第4圖中 ’ 34爲配置在運送台車23的行進路徑途中夾持支架30 的兩面之導引滾輪’運送台車23能一邊受到該導引滾輪 34導引一邊穩定地行進。又，前述運送台車23的停止位 置是藉由計數驅動裝置31的旋轉數、或運送台車23遮蔽 設置於所需處所的光學式感應器（未圖示）的光軸來檢測 ，以根據該檢測結果，停止驅動裝置3 1的旋轉，來使在 預定的位置停止運送台車23。 然而，在使用作爲如前述結構的基板運送裝置之運送 台車23將基板4搬入至成膜室1內，在該基板4表面形 成矽膜等的薄膜之情況時，在成膜室1內，須要配設對於 基板4可接近·分離之防止電漿迂迴進入到基板4的背面 側用之四方框狀的光罩面板35。 即，在藉由前述運送台車23將基板4搬入至成膜室 1內時，須要使光罩面板35由如第4圖所示的位置轉移 至誘導結合型電極3側，使得不會妨礙基板4通過，而一 方面，在對於基板4表面形成薄膜時，須要藉由使光罩面 板35哦動至如第4圖所示的位置來覆蓋基板4的外周緣 部，使得由誘導結合型電極3所產生的電漿不會迂迴進入 到基板4的背面側。 但，如前所述，爲了使由誘導結合型電極3所產生的 -11 - (8) (8)1331125 電漿不會迂迴進入到基板4的背面側，而可覆蓋基板4的 外周源全部之大型光罩面板35是不可欠缺的，並且須要 將與基板4之間隙抑制在最小限度，但將如此大型的誘導 結合型電極3精度良好且可動地配置於成膜室1內是困難 的，而進而使得成本提昇之缺點產生》 又，由於會有矽膜等的薄膜附著於前述光罩面板35 的表面，受到此薄膜的落下使得阻礙在基板4均等地形成 基板4之虞’故必須定期地進行除去附著於光罩面板35 φ 表面的薄膜之作業，但因光罩面板35與誘導結合型電極 3之間隔極爲狹窄，故會有無法有效率地進行除去作業， 維修性也差之問題產生。 本發明是有鑒於上述情事而開發完成的發明，其目的 在於提供：不須要在成膜室內設置覆蓋基板的外周緣部全 體之大型光罩面板，可確實地防止由電極所產生的電漿不 會迁迴進入至基板的背面側，並且可謀求成本降低及維修 性提昇之薄膜形成裝置的基板運送裝置。 · 【發明內容】 本發明的薄膜形成裝置的基板運送裝置是針對於在同 —平面內配設有電極的成膜室內，使該基板表面與電極相 對向地將載置於運送台車上的基板搬入，在該基板表面形 成薄膜之薄膜形成裝置的基板運送裝置，其特徵爲： 在運送台車上，形成較基板大的開口部且立設與電極 相對向的隔壁面板，並且在該隔壁面板的反電極側，配設 -12- 1331125 Ο) 裝設有基板的框架狀基板座，使基板配設於前述隔壁面板 的開口部之大致中央部且基板座的外周緣部受到隔壁面板 所覆蓋隱藏者。 若根據上述手段，可獲得以下的作用。 在藉由將基板裝設於框架狀的基板座，將裝設有該基 板的基板座配設於立設在運送台車上的隔壁面板之反電極 側，而使基板配置於隔壁面板的開口部之大致中央部且基 板座的外周緣部受到隔壁面板所覆蓋隱藏的狀態下，將運 鲁 送台車搬入至成膜室，使基板表面與電極相對向，當由該 電極使電漿產生時，則在基板表面形成薄膜。 在此，由於容易分別將基板與基板座之間隙及基板座 與隔壁面板之間隙抑制在最小限度，藉由該基板座與隔壁 面板可確實地防止電漿迂迴進入到基板的背面側，故變得 不須要設置覆蓋基板的外周緣部全體之大型光罩面板，並 且也不須要將如此大型的光罩面板精度良好且可動地配設 於成膜室內，可謀求成本降低。 · 又，由於會有矽膜等的薄膜附著於前述基板座與隔壁 面板的表面，受到此薄膜落下，阻礙薄膜均等地形成於基 板之虞，故須要定期地進行除去附著於前述基板座與隔壁 面板的表面之薄膜的作業，但由於前述基板座與隔壁面板 搭載於運送台車上，可搬出至成膜室的外部，故形成能夠 在成膜室的外部有效地進行附著於基板座與隔壁面板的薄 膜之除去作業，維修性也變得良好。 在前述薄膜形成裝置的基板運送裝置，能在成膜室內 -13 - (10) (10)1331125 ，朝與運送台車的行進方向呈直角的水平方向隔著所須間 隔設置複數行的電極，且在運送台車上立設複數個隔壁@ 板，使基板表面對向於該各電極的兩側面，藉此，在同胃 地在複數個基板上形成薄膜，且可提升生產性的點上非常 有利。 又’在前述薄膜形成裝置的基板運送裝置，在運送台> 車上朝其行進方向隔著所須間隔立設支柱，在該支柱間， 架設隔壁面板地加以安裝，並且對於由前述支柱突設的承 Φ 受構件，亦可卡止來自於基板座的突起物，藉此，容易藉 由機器手臂將裝設有基板的基板座裝卸於運送台車上，能 夠變得更容易進行成膜工序的自動化。 且，在前述薄膜形成裝置的基板運送裝置，在基板座 的背面側之內周緣部，形成供基板的外周緣部嵌入的保持 溝槽’並且安裝由背面側按壓支承嵌入於該保持溝槽的基 板之外周緣部的保持具，藉此，能夠更確實地進行對於基 板座的基板之裝設。 Φ 又，在前述薄膜形成裝置的基板運送裝置，能夠將電 極作成：具有在中央折返的大致呈U字狀，並且在其兩 端部設有供電部與接地部之誘導結合型電極。 【實施方式】 以下，根據圖面說明關於本發明的實施例》 第6〜11圖是本發明的實施例，圖中，賦予與第3〜 5圖相同圖號的部分顯示相同物，基本結構是與如第3〜5 -14 - (11) 1331125 圖的以往者相同，但本實施例的特徵點是在於：如第6〜 j 1圖所示，在運送台車23上，形成較基板4大的開口部 36，且立設有與誘導結合型電極3相對向的隔壁面板37 ，並且在該隔壁面板37的反誘導結合型電極3側，將裝 言受有基板4的框架狀的基板座38配設成：基板4配置於 前述隔壁面板37的開口部36之大致中央部且基板座38 的外周緣部受到隔壁面板3 7所覆蓋隱藏的點。 在本實施例的情況，由於在成膜室1內，朝與運送台 車23的行進方向呈直角的水平方向隔著所須間隔設置有 複數行（在第6圖的例子爲3行）誘導結合型電極3，故 在運送台車23上立設複數個（在第6圖的例子爲6片） 的隔壁面板37，使基板4表面對向於該各誘導結合型電 極3的兩面側。 又，前述隔壁面板37是安裝成架設於在運送台車23 上朝其行進方向隔著所須間隔立設的支柱2 8間，並且對 於由前述支柱28立設的承受構件39卡止作爲來自於基板 座38的突設物之銷40。 且，在前述基板座38的背面側之內周緣部，如第9 圖所示，形成供基板4的外周緣部嵌入之保持溝槽41， 並且安裝由背面側按壓保持嵌入於該保持溝槽41的基板 4的外周緣部之保持具42。前述保持具42的結構是藉由 彈簧42a的彈推力將夾持構件42b按壓於基板4的背面側 之外周緣部，而配設於基板座38的背面側之內周緣部的 複數所須處所。 -15- (12) (12)1331125 再者，在成膜室1內’如第6圖所示，對於隔壁面板 37可接近.分離地配設有僅覆蓋隔壁面板37的上緣部之 光罩面板3 5 ’。 又’在弟10及第11圖中’ 43爲將作爲來自於裝設 有基板4的基板座38之突起物的銷40之部分載置於支柱 28的承受構件39上、或由該承受構件39上將其舉起之 機器手臂。 其次，說明上述實施例的作用。 · 當在框架狀的基板座38裝設基板4，藉由將裝設有 該基板4的基板座38配設於立設在運送台車23上的隔壁 面板37的反誘導結合型電極3側，使在隔壁面板37的開 口部36之大致中央部配置基板4，並且基板座38的外周 緣部受到隔壁面板3 7所覆蓋隱藏之狀態下，當將運送台 車23搬入至成膜室1內，使基板4表面與誘導結合型電 極3相對向，由該誘導結合型電極3使電漿產生時，則在 基板4表面形成薄膜。 籲 在此，由於容易分別將基板4與基板座3 8之間隙及 基板座3 8與隔壁面板3 7之間隙抑制在最小限度，藉由該 基铒座38與隔壁面板37可確實地防止電漿迂迴進入到基 板4的背面側，故在成膜室1內，如第6圖所示，設置僅 覆蓋隔壁面板37的上緣部之光罩面板35’即可，變得不 須要設置覆蓋基板4的外周緣部全體之大型光罩面板3 5 (參照第4圖），並且也不須要將如此大型的光罩面板 35精度良好且可動地配設於成膜室1內，可謀求成本降 -16 - (13) (13)1331125 低。 又，由於會有矽膜等的薄膜附著於前述基板座38與 隔壁面板3 7的表面，受到此薄膜的落下使得阻礙在基板 4均等地形成基板4之虞，故必須定期地進行除去附著於 基板座38與隔壁面板37的表面的薄膜之作業，但由於基 板座38與隔壁面板37是搭載於運送台車23上，能搬出 至成膜室1的外部，故在成膜室1的外部可有效率地進行 附著於基板座38與隔壁面板37的表面之薄膜的除去作業 ，維修性也變得良好。 在本實施例，由於在成膜室1內朝與運送台車23的 行進方向呈直角的水平方向隔著所須間隔設置複數行誘導 結合型電極3，而在運送台車23上立設複數個隔壁面板 37，使基板4表面對向於該各誘導結合型電極3的兩面側 ，故能夠在複數個基板4上同時形成薄膜，可使生產性提 昇》 又，在本實施例，由於前述隔壁面板37是安裝成： 架設於在運送台車23上朝其行進方向隔著所須間隔立設 的支柱28間，並且對於由前述支柱28突設的承受構件 39，使作爲由作爲來自於基板座38的突起物之銷40卡止 ，故如第10及第11圖所示，藉由機器手臂將裝設有基板 4的基板座38裝卸於運送台車23上，變得更容易進行成 膜工序的自動化。 且，在本實施例，由於在基板座38的背面側之內周 緣部，如第9圖所示，形成供基板4的外周緣部嵌入之保 -17- (14) (14)1331125 持溝槽4 1 ’並且安裝由背面側按壓支承嵌入於該保持溝 槽41的基板4之外周緣部的保持具42，故能夠更確實地 進行對於基板座38之基板4的裝設。 藉此，不須要在成膜室1內設置覆蓋基板4的外周緣 部全體之大型的光罩面板35，能夠確實地防止由誘導結 合型電極3所產生的電漿迂迴進入到基板4的背面側，可 謀求成本降低及維修性提昇。 再者，本發明之薄膜形成裝置的基板運送裝置不是僅 限於上述實施例，在不超出本發明的技術思想的範圍內可 進行各種變更。 〔產業上的利用可能性〕 如上所述，本發明之薄膜形成裝置的基板運送裝置是 適合於：以1次的操作，在複數個大型基板上均等地形成 矽等的薄膜，而獲得期望特性的太陽電池。 【圖式簡單說明】 第1圖是以往的薄膜形成裝置的一例之側斷面圖。 第2圖是以往的薄膜形成裝置的一例之正斷面圖，第 1圖的II-II箭號觀看相當圖。 第3圖是顯示爲了將對於基板的薄膜形成作業自動化 而提案的以往的薄膜形成裝置的全體槪略流程的平面圖。 第4圖是以往的薄膜形成裝置的基板運送裝置之一例 的正斷面圖。 -18 - (15) (15)1331125 第5圖是以往的薄膜形成裝置的基板運送裝置之一例 的側斷面圖，爲第4圖的V-V箭號觀看相當圖。 第6圖是本發明的實施例之正斷面圖。 第7圖是本發明的實施例之側斷面圖，爲第6圖的 VII-VII箭號觀看相當圖。 第8圖是第7圖的VIII-VIII斷面圖。 第9圖是設在本發明的實施例之基板座的基板之保持 具的平面圖，爲第8圖的IX部相當圖。 · 第1〇圖是顯示本發明的實施例之基板座的根據機器 手臂之裝卸狀態的正斷面圖》 第1 1圖是顯示本發明的實施例之基板座的根據機器 手臂之裝卸狀態的斜視圖β 〔圖號說明〕 1 :成膜室 2 :隔壁 _ 2a :前壁 3 :誘導結合型電極 3 a :供電部 3b :接地部 4 :基板 5 :供電側連接器 6 :尚頻電源 7 :同軸電纜 -19- (16) (16)1331125 8 :接地側連接器 9 :基板支承台 1 〇 :真空排氣裝置 1 1 :氣體供給源 1 2 :原料氣體 1 3 :基板裝設部 1 4 :基板加熱裝置 1 5 :加熱部 _ 16 :均熱器 1 7 :真空排氣裝置 1 8 =負載鎖定室 1 8 a :外氣導入口 1 9 :溫度調節裝置 20 :真空排氣裝置 2 1 :無負載鎖定室 2 1 a :外氣導入口 鲁 2 2 :基板取出部 23 :運送台車 24a〜24e:閘閥 25 :導軌 26 :車輪 27 :台車本體 2 8 :支柱 2 9 :爪構件 -20 - (17) (17)1331125 30 :支架 3 1 :驅動裝置 3 5 :光罩面板 3 5 ’ ：光罩面板 3 6 :開口部 3 7 :隔壁面板 38 :基板座 3 9 :承受構件 40 :銷 4 1 :保持溝槽 4 2 :保持具 4 2 a :彈簧 42b :夾持構件1331125 (1) Technical Field of the Invention The present invention relates to a substrate transfer apparatus for a thin film forming apparatus for plasma CVD in which a thin film of tantalum or the like is uniformly formed on a substrate. [Prior Art] Solar cells are expected to be attracting attention as clean energy sources. In order to spread them, cost reduction is indispensable. Therefore, it is strongly desired that Lun achieves a high-productivity thin film forming apparatus by forming a tantalum film having a uniform film thickness on a large substrate and forming a tantalum film on a plurality of substrates in a single operation. For the formation of a film such as a ruthenium film, a parallel plate type (capacity-bonding type) plasma CVD apparatus is put into practical use, but since only one piece of the substrate can be processed, the processing ability is low, and when a plurality of substrates are to be simultaneously processed, There is a problem that the device is extremely large. Further, as the size of the substrate is increased, the film thickness uniformity of the formed film is remarkably lowered, and the problem of the solar cell in which the desired characteristics are not obtained is caused. # In order to produce a film with high film thickness uniformity, it is necessary to form plasma of uniform density on the entire substrate. Therefore, various reviews have been made. However, in the parallel plate type electrode method, it is not easy to form a plasma of uniform density when the substrate is enlarged. In other words, in the parallel plate type electrode, in order to form a plasma of uniform density, it is necessary to accurately maintain the distance between the two electrodes in the entire area of the substrate, but this operation is not easy, and it becomes more difficult when the substrate is enlarged. . In the parallel plate type electrode method, the discharge between the electrode with high frequency and the opposite electrode at the ground potential and the wall of the film forming chamber is -5-(2) (2) 1331125, and the electrode generates its own offset potential. Therefore, there is a problem in that the plasma density is dispersed (for example, U.S. Patent No. 5 4 3 8 9 5). Further, when the electrode becomes large, a standing wave is generated on the surface thereof, so that there is a plasma distribution. Therefore, there is a proposal that the plasma sustaining mechanism is completely different from the parallel plate type electrode method, and the problem that the electrode-to-electrode distance accuracy inherent to the parallel plate-type electrode method is not self-dispersed by the electrode is not caused, and the film is used for high-speed film formation. The high frequency of the favorable VHF band can produce a high plasma density plasma CVD method for inducing bonded electrodes. However, for example, when the above-described induction bonding type electrode having a ladder shape or bent into a zigzag shape becomes larger corresponding to the enlargement of the substrate, the current passing path does not easily become equal, and there may be an unexpected place. Since the problem of standing waves is partially generated, it is difficult to make the plasma density uniform, and it is very difficult to correspond to a large-area substrate in the conventional electrode structure. Therefore, a thin film forming apparatus which can form a ruthenium film of a uniform thickness on a large substrate and which can simultaneously form a ruthenium film on a plurality of substrates to improve productivity can be developed without increasing the size of the apparatus. As shown in the first and second figures, the device is provided with a plurality of rows (three rows in the example of Fig. 2) in the partition wall 2 of the film forming chamber 1 (in the second drawing). An induced binding type electrode group 3A) is composed of six induced binding type electrodes 3. Each of the induction-bonding electrodes 3 is formed in a substantially U-shape by the power supply portion 3a and the ground portion 3b, and is disposed in the same plane with a substantially U-shaped surface therebetween. The electrode row. -6- (3) (3) 1331125 The front end of the feeding portion 3a of each of the induction bonding electrodes 3 having a substantially U-shaped shape is connected to the power supply side connector 5 of the partition wall 2 provided at the upper portion of the film forming chamber 1. The power supply inner conductor is connected to the core side of the high frequency power supplied to the coaxial cable 7 connected to the high frequency power source 6. Further, the front end of each of the induction bonding type electrode 3 and the ground portion 3b is grounded to the partition wall 2 by a ground conductor provided on the ground side connector 8 of the partition wall 2. Further, the outer conductor of the power supply side connector 5 is grounded to the partition wall 2, and the outer conductor is connected to the core side of the core cable covering the coaxial cable 7, and a ground potential is formed to shield the ground of the high frequency power. At this time, in order to supply the high frequency of the opposite phase to the power supply unit 3a of the adjacent induction bonding electrodes 3 and 3, a phase shifter (not shown) is disposed between the power supply side connector 5 and the high frequency power source 6. Further, a high-frequency power source 6 is connected to a function generator (not shown), and a desired AM modulation is applied to the high-frequency power output from the high-frequency power source 6. As shown in Fig. 1, the thin film forming apparatus has a structure in which an electrode row (inducing bonding type electrode group 3 A ) that induces the bonding electrode 3 in accordance with the width of the substrate 4 is arranged as shown in Fig. 2 By arranging a plurality of rows and arranging the substrate 4 on both sides of each of the induction bonding electrodes 3, it is possible to form a film on a plurality of substrates 4 (6 in the example of FIG. 2) at the same time, which can be improved. Productive. The front wall 2a (the left side wall of Fig. 1) of the film forming chamber 1 is configured to be switchable, and the substrate 4 can be carried into the substrate supporting table 9 by the opening of the front wall 2a, or can be taken out from the substrate supporting table 9. . Further, the inside of the film forming chamber 1 is connected to the vacuum exhausting means (4) (4) 1331125, and the inside is evacuated by vacuum. Therefore, the film forming chamber 1 is airtight. In addition, a gas supply source 11 is connected to the outside of the grounding-side connector 8, and the inside of the grounding portion 3b is formed by the tube that induces the bonding-type electrode 3, and decane or the like can be supplied to the inside of the film forming chamber 1. The material gas for film formation is 1 2 . In the thin film forming apparatus shown in FIGS. 1 and 2, the substrate 4 is placed on both sides of the induction bonding type electrode 3 disposed in a plurality of rows, and the inside of the film forming chamber 1 is held in a vacuum by the vacuum evacuation device 10, and The source gas 12 such as decane is supplied from the gas supply source 11, and in this state, high-frequency power is supplied to the induction bonding electrode 3 by the high-frequency power source 6, and electricity is generated around the power supply portion 3a and the ground portion 3b. In the case of slurry, a uniform film of tantalum can be formed on the surface of the substrate 4. Further, as a film forming apparatus as described above, there is, for example, a patent document of Japanese Patent Laid-Open Publication No. 2002-6965. However, in the thin film forming apparatus provided as the single film forming chamber 1 as shown in the first and second drawings, since it is difficult to automate the process of forming a thin film on the surface of the substrate 4, for example, 3 shows a thin film forming apparatus which is provided with a substrate mounting portion 13 , a heating portion 15 having a substrate heating device 14 , and an external air introduction capable of switching between the heat spreader 16 and the vacuum exhaust device 17 Load lock chamber 18 of port 18a: film forming chamber 1 having induced bonding electrode 3, vacuum exhaust device 10, gas supply source 11 and temperature adjusting device 19; and gas inlet port capable of switching with vacuum exhaust device 20 The load-free lock chamber 21 of 21a and the substrate take-out portion 22, and the transport carriage 23 on which the substrate 4 can be placed is locked by the above-described board mounting portion 13 via the heating portion 15 and the load by the -8-(5) (5) 1331125 The chamber 18 travels toward the film forming chamber 1 and is carried in, passes through the no-load lock chamber 21, moves toward the substrate take-out portion 22, and returns to the substrate mounting portion 13 again. Further, in Fig. 3, 24a and 24e are gate valves for interrupting the load and no load, respectively. Further, in Fig. 3, 24b, 24c, and 24d are gate valves for mutually blocking the load lock chamber 18, the film forming chamber 1, and the no-load lock chamber 21. When a thin film is formed on the surface of the substrate 4, first, the substrate 4 is placed on the transport carriage 23 in the substrate mounting portion 13. The substrate 4 placed on the transport carriage 23 is carried into the heating unit 15 by opening the gate valve 24a, and after the gate valve 24a is closed, the substrate heating device 14 is uniformly heated to a predetermined temperature. The substrate 4 heated by the heating unit 15 is carried into the load lock chamber 18 by opening the gate valve 24b, and after the gate valve 24b is closed, the load lock chamber 18 is decompressed by the vacuum exhaust device 17, and The heater 16 maintains the temperature of the aforementioned substrate 4 at a predetermined temperature. Then, the substrate 4 is carried into the film forming chamber 1 by opening the gate valve 24c, and after the gate valve 2k is closed, a predetermined pressure is maintained by the vacuum exhaust device 10, and decane or the like is supplied by the gas supply source 11. In the state of the material gas 12, a ruthenium film is formed on the surface of the substrate 4 by actuating the induction bonding electrode 3. When the film formation on the substrate 4 is completed, the substrate 4 is carried out to the no-load lock chamber 21 by opening the gate valve 24d. At this time, the inside of the no-load lock chamber 21 is previously decompressed by the vacuum exhaust device 20 into the same negative pressure as the above-mentioned film formation -9-(6) (6) 1331125, when the substrate 4 is carried out without load. When the lock chamber 21 is closed, the gate valve 24d$ is closed. Then, the external air introduction port 21a' is opened to boost the no-load lock chamber 21 to atmospheric pressure, and then the gate valve 24e is opened. In this state, the substrate 4 placed on the transport carriage 23 is carried out to the outside. Further, the transport carriage 23 is moved to the substrate take-out portion 22, and the substrate 4 which has been formed is taken out and collected. Further, when the next substrate 4 is carried in the load lock chamber 18 which has been depressurized, the outside air introduction port 18a is opened, the load lock chamber 18 is raised to the atmospheric pressure, and the gate valve 24b is opened. Here, the transport carriage 23 used as the substrate transport apparatus of the thin film forming apparatus shown in FIG. 3 is conventionally provided with wheels that are freely rotatable on the guide rail 25 as shown in FIGS. 4 and 5 On the upper surface of the carriage body 27 of 26, the support 28 is erected at a desired interval in the traveling direction, and the claw member 29 of the locking substrate 4 is attached to the surface of the support 28 on the side of the induction-bonding electrode 3 The substrate 4 is mounted between the pillars 28 and mounted thereon, and the surface of the substrate 4 faces the induction bonding electrode 3. In the example shown in FIG. 4, in the film forming chamber 1, the electrode rows in which the bonding-type electrodes 3 are arranged are arranged at intervals in the horizontal direction at right angles to the traveling direction of the transport carriage 23 (in the first In the example of FIG. 4, the surface of the substrate 4 is opposed to the both sides of the electrode row of each of the induction bonding electrodes 3, and a complex array is placed on the carriage body 27 of the transport carriage 23 (in FIG. 4 The example is 6 sets) Pillars 2 8. Further, a bracket 30 extending in the traveling direction of the lower center portion of the carriage body 27 of the transport carriage 23 is engaged with the bracket 30, and the driving device 31 of the motor such as -10 - (7) (7) 1331125 is rotated. The pinion gear 33 that is rotationally driven by the shaft 32 is disposed at a short distance from the length of the truck body 27 in the middle of the traveling path of the transport carriage 23, and by sequentially driving the drive device 31, the transport carriage 23 is fed and travels. Further, in Fig. 4, '34' is a guide roller' that conveys the both sides of the holder 30 in the middle of the traveling path of the transport carriage 23, and the transport carriage 23 can stably travel while being guided by the guide roller 34. Further, the stop position of the transport carriage 23 is detected by the number of rotations of the counting drive device 31 or the optical axis of the optical sensor (not shown) provided in the desired position by the transport carriage 23, in accordance with the detection. As a result, the rotation of the driving device 31 is stopped to stop the transportation of the carriage 23 at a predetermined position. However, when the substrate 4 is carried into the film forming chamber 1 by the transport carriage 23 as the substrate transport device having the above-described configuration, and a film such as a ruthenium film is formed on the surface of the substrate 4, it is necessary in the film forming chamber 1 A mask panel 35 for preventing the plasma from being slid back into the back side of the substrate 4 for the substrate 4 to be separated and separated is disposed. In other words, when the substrate 4 is carried into the film forming chamber 1 by the transport carriage 23, the mask panel 35 needs to be transferred from the position shown in FIG. 4 to the side of the induction bonding type electrode 3 so that the substrate is not hindered. 4, on the one hand, when forming a film on the surface of the substrate 4, it is necessary to cover the outer peripheral edge portion of the substrate 4 by moving the mask panel 35 to the position as shown in FIG. 4, so that the induced bonding electrode is used. The plasma generated by 3 does not bypass back to the back side of the substrate 4. However, as described above, in order to prevent the -11 - (8) (8) 1331125 plasma generated by the induced bonding type electrode 3 from coming back to the back side of the substrate 4, the outer peripheral source of the substrate 4 can be covered. The large-sized photomask panel 35 is indispensable, and the gap with the substrate 4 is required to be minimized. However, it is difficult to accurately and movably arrange such a large-sized induction-bonding electrode 3 in the film forming chamber 1. Further, there is a disadvantage that the cost is increased. Further, since a film such as a ruthenium film adheres to the surface of the reticle panel 35, the film is dropped so that the substrate 4 is uniformly formed on the substrate 4, so it is necessary to periodically The operation of removing the film adhering to the surface of the mask panel 35 φ is performed, but the interval between the mask panel 35 and the induction bonding electrode 3 is extremely narrow, so that the removal operation cannot be performed efficiently, and the maintainability is also poor. produce. The present invention has been made in view of the above circumstances, and an object of the invention is to provide a large-sized mask panel that does not require the entire outer peripheral edge portion of the substrate to be covered in the film formation chamber, and can reliably prevent plasma generated by the electrodes from being reliably prevented. The substrate transport apparatus of the thin film forming apparatus which can be moved back to the back side of the substrate and which is cost-effective and maintainable. In the film forming apparatus of the film forming apparatus of the present invention, the substrate is placed in the film forming chamber in which the electrodes are arranged in the same plane, and the substrate surface and the electrodes are placed on the transporting cart. A substrate transfer device for a film forming apparatus that forms a film on the surface of the substrate, wherein a transport wall is formed with a large opening portion and a partition wall facing the electrode, and the partition wall panel is erected on the transport wall On the counter electrode side, a frame-shaped substrate holder on which the substrate is mounted is disposed, and the substrate is disposed at a substantially central portion of the opening of the partition wall panel, and the outer peripheral edge portion of the substrate holder is covered by the partition wall panel. By. According to the above means, the following effects can be obtained. By mounting the substrate on the frame-shaped substrate holder, the substrate holder on which the substrate is mounted is disposed on the counter electrode side of the partition panel that is erected on the transport carriage, and the substrate is placed in the opening of the partition panel In the substantially central portion and the outer peripheral edge portion of the substrate holder is hidden by the partition wall panel, the transport trolley is carried into the film forming chamber, and the surface of the substrate faces the electrode. When the plasma is generated by the electrode, Then, a film is formed on the surface of the substrate. Here, it is easy to minimize the gap between the substrate and the substrate holder and the gap between the substrate holder and the partition wall panel, and the substrate holder and the partition wall panel can surely prevent the plasma from entering the back side of the substrate. It is not necessary to provide a large-sized photomask panel covering the entire outer peripheral edge portion of the substrate, and it is not necessary to arrange such a large-sized photomask panel accurately and movably in the film forming chamber, and the cost can be reduced. Further, since a film such as a ruthenium film adheres to the surface of the substrate holder and the partition wall panel, the film is dropped, and the film is prevented from being uniformly formed on the substrate. Therefore, it is necessary to periodically remove and adhere to the substrate holder and the partition wall. In the operation of the film on the surface of the panel, since the substrate holder and the partition panel are mounted on the transport carriage and can be carried out to the outside of the film formation chamber, the substrate can be effectively attached to the substrate holder and the partition wall outside the film formation chamber. The removal of the film is also good in maintainability. In the substrate transfer device of the film forming apparatus, a plurality of rows of electrodes can be disposed in the film forming chamber - 13 (10) (10) 1331125 in a horizontal direction at right angles to the traveling direction of the transport carriage, and A plurality of partitions @ plates are erected on the transport trolley so that the surface of the substrate faces both sides of the electrodes, thereby forming a film on the plurality of substrates in the same stomach, and it is advantageous in improving productivity. . Further, in the substrate transfer device of the film forming apparatus, a support pillar is erected in a traveling direction in the traveling direction of the vehicle, and a partition wall panel is placed between the pillars, and the pillar is protruded from the pillar. The Φ receiving member can also be used to lock the projections from the substrate holder, thereby making it easy to attach and detach the substrate holder on which the substrate is mounted to the transport carriage by the robot arm, thereby making it easier to perform the film forming process. Automation. Further, in the substrate transfer device of the film forming apparatus, a holding groove 'in which the outer peripheral edge portion of the substrate is fitted is formed on the inner peripheral edge portion of the back surface side of the substrate holder, and the mounting is fitted to the holding groove by the back side press support. The holder of the outer peripheral portion of the substrate can thereby more reliably mount the substrate to the substrate holder. Φ Further, in the substrate transfer device of the film forming apparatus, the electrode can be formed of an induction-type electrode having a substantially U-shaped shape folded back at the center and a power supply portion and a ground portion at both ends thereof. [Embodiment] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. Figs. 6 to 11 are diagrams showing an embodiment of the present invention. In the figure, portions having the same reference numerals as in Figs. 3 to 5 are shown as the same, and the basic structure is shown. It is the same as the former of the figures 3 to 5 - 14 - (11) 1331125, but the feature of this embodiment is that the substrate 4 is formed on the transport carriage 23 as shown in the sixth to j-1 diagrams. A large opening portion 36 is provided with a partition wall panel 37 that faces the induction bonding electrode 3, and a frame-shaped substrate that receives the substrate 4 is attached to the side of the reverse induction bonding type electrode 3 of the partition wall panel 37. The seat 38 is disposed such that the substrate 4 is disposed at a substantially central portion of the opening portion 36 of the partition wall panel 37, and the outer peripheral edge portion of the substrate holder 38 is hidden by the partition wall panel 37. In the case of the present embodiment, in the film forming chamber 1, a plurality of rows (three rows in the example of Fig. 6) are provided in the horizontal direction at right angles to the traveling direction of the transport carriage 23, and the combination is induced. Since the electrode 3 is provided, a plurality of partition walls 37 (six in the example of Fig. 6) are erected on the transport carriage 23, and the surfaces of the substrates 4 are opposed to both sides of the induction bonding type electrodes 3. Further, the partition wall panel 37 is attached to the pillars 28 that are erected on the transport carriage 23 in the traveling direction thereof, and is supported by the receiving member 39 that is erected by the pillars 28 as A pin 40 of the protrusion of the substrate holder 38. Further, as shown in FIG. 9, the inner peripheral edge portion of the back surface side of the substrate holder 38 is formed with a holding groove 41 into which the outer peripheral edge portion of the substrate 4 is fitted, and the mounting is pressed by the back side and held in the holding groove. The holder 42 of the outer peripheral edge portion of the substrate 4 of 41. The holder 42 is configured such that the holding member 42b is pressed against the outer peripheral edge portion of the back surface side of the substrate 4 by the elastic force of the spring 42a, and is disposed on the inner peripheral edge portion of the back side of the substrate holder 38. . -15- (12) (12) 1331125 Further, as shown in Fig. 6, in the film forming chamber 1, as shown in Fig. 6, the partition wall panel 37 is detachably provided with light that covers only the upper edge portion of the partition wall panel 37. Cover panel 3 5 '. In the '10th and 11th drawings, '43' is a portion of the pin 40 that is a projection from the substrate holder 38 on which the substrate 4 is mounted, or is placed on or received by the receiving member 39 of the stay 28. 39 lifted the robotic arm. Next, the action of the above embodiment will be explained. The substrate 4 is mounted on the frame-like substrate holder 38, and the substrate holder 38 on which the substrate 4 is mounted is disposed on the side of the anti-induction bonding electrode 3 of the partition panel 37 that is erected on the transport carriage 23, When the substrate 4 is placed at a substantially central portion of the opening 36 of the partition panel 37, and the outer peripheral edge portion of the substrate holder 38 is hidden by the partition panel 37, the transport carriage 23 is carried into the film forming chamber 1. When the surface of the substrate 4 is opposed to the induced bonding electrode 3, and the plasma is generated by the induced bonding electrode 3, a thin film is formed on the surface of the substrate 4. Here, since it is easy to minimize the gap between the substrate 4 and the substrate holder 38 and the gap between the substrate holder 38 and the partition panel 37, the base 38 and the partition panel 37 can reliably prevent electricity. Since the pulp is returned to the back side of the substrate 4, as shown in Fig. 6, a mask cover 35' covering only the upper edge portion of the partition panel 37 is provided in the film forming chamber 1, and it is not necessary to provide a cover. The large-sized photomask panel 35 (see FIG. 4) of the entire outer peripheral edge portion of the substrate 4 does not require such a large-sized photomask panel 35 to be accurately and movably disposed in the film forming chamber 1, thereby achieving cost. Drop -16 - (13) (13) 1331125 Low. Further, since a film such as a ruthenium film adheres to the surface of the substrate holder 38 and the partition panel 37, the film is dropped so that the substrate 4 is uniformly formed on the substrate 4, and therefore it is necessary to periodically remove and adhere thereto. Though the substrate holder 38 and the partition panel 37 are mounted on the transport carriage 23 and can be carried out to the outside of the film formation chamber 1, the substrate holder 38 and the partition panel 37 can be carried out outside the film formation chamber 1. The removal operation of the film adhering to the surface of the substrate holder 38 and the partition wall panel 37 is efficiently performed, and the maintainability is also improved. In the present embodiment, a plurality of rows of induction bonding electrodes 3 are disposed in the film forming chamber 1 at a right angle in a horizontal direction perpendicular to the traveling direction of the transport carriage 23, and a plurality of partition walls are erected on the transport carriage 23. In the panel 37, the surface of the substrate 4 is opposed to both sides of the induction bonding type electrode 3, so that a film can be simultaneously formed on the plurality of substrates 4, and the productivity can be improved. Further, in the present embodiment, the partition wall panel is used. 37 is installed so as to be placed between the pillars 28 that are erected on the transport carriage 23 in the traveling direction thereof by the required interval, and the receiving member 39 protruding from the pillars 28 is used as the substrate holder 38. The pins 40 of the projections are locked. Therefore, as shown in FIGS. 10 and 11, the substrate holder 38 on which the substrate 4 is mounted is attached and detached to the transport carriage 23 by the robot arm, which makes it easier to perform the film forming process. automation. Further, in the present embodiment, as shown in Fig. 9, the inner peripheral edge portion of the back surface side of the substrate holder 38 is formed to hold the outer peripheral edge portion of the substrate 4, and the -17-(14)(14)1331125 groove is formed. In the groove 4 1 ', the holder 42 that is fitted and supported by the outer peripheral edge portion of the substrate 4 of the holding groove 41 is supported by the back side, so that the mounting of the substrate 4 to the substrate holder 38 can be performed more reliably. Therefore, it is not necessary to provide a large mask panel 35 covering the entire outer peripheral edge portion of the substrate 4 in the film forming chamber 1, and it is possible to reliably prevent the plasma generated by the induced bonding type electrode 3 from entering the back surface of the substrate 4. On the side, cost reduction and maintainability can be sought. Further, the substrate transporting apparatus of the film forming apparatus of the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the scope of the technical idea of the present invention. [Industrial Applicability] As described above, the substrate transfer apparatus of the film forming apparatus of the present invention is suitable for uniformly forming a film of tantalum or the like on a plurality of large substrates in a single operation to obtain desired characteristics. Solar battery. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a side cross-sectional view showing an example of a conventional film forming apparatus. Fig. 2 is a front sectional view showing an example of a conventional film forming apparatus, and the II-II arrow of Fig. 1 is a view corresponding to the drawing. Fig. 3 is a plan view showing the overall outline of a conventional thin film forming apparatus proposed to automate the film forming operation on the substrate. Fig. 4 is a front sectional view showing an example of a substrate transfer device of a conventional film forming apparatus. -18 - (15) (15) 1331125 Fig. 5 is a side sectional view showing an example of a substrate transfer device of a conventional thin film forming apparatus, and is a view corresponding to the V-V arrow of Fig. 4. Fig. 6 is a front sectional view showing an embodiment of the present invention. Fig. 7 is a side sectional view showing an embodiment of the present invention, and is a view corresponding to the arrow VII-VII of Fig. 6. Figure 8 is a sectional view taken along line VIII-VIII of Figure 7. Fig. 9 is a plan view showing the holder of the substrate provided in the substrate holder of the embodiment of the present invention, and is a view corresponding to the IX portion of Fig. 8. 1 is a front cross-sectional view showing a state in which a substrate holder according to an embodiment of the present invention is attached or detached according to a robot arm. FIG. 1 is a view showing a state in which a substrate holder according to an embodiment of the present invention is attached or detached according to a robot arm. Oblique view β [Illustration number] 1 : Film forming chamber 2: partition wall _ 2a : front wall 3 : induction bonding type electrode 3 a : power supply portion 3b : grounding portion 4 : substrate 5 : power supply side connector 6 : frequency power supply 7 : Coaxial cable -19- (16) (16) 1331125 8 : Ground side connector 9 : Substrate support table 1 真空 : Vacuum exhaust device 1 1 : Gas supply source 1 2 : Raw material gas 1 3 : Substrate mounting unit 1 4 : Substrate heating device 1 5 : Heating portion _ 16 : Heat spreader 1 7 : Vacuum exhaust device 1 8 = Load lock chamber 1 8 a : External air introduction port 1 9 : Temperature adjustment device 20 : Vacuum exhaust device 2 1 : No-load lock chamber 2 1 a : External air introduction port 2 2 : Substrate take-out portion 23 : Transport cart 24a to 24e: Gate valve 25 : Guide rail 26 : Wheel 27 : Pallet body 2 8 : Pillar 2 9 : Claw member -20 - (17) (17) 1331125 30 : Bracket 3 1 : Drive unit 3 5 : Photomask panel 3 5 ' : Photomask panel 3 6 : Opening 3 7 : Next door Plate 38: substrate holder 39: bearing member 40: pin 41: holding groove 42: A holder 42: Spring 42b: holding member