TWI326886B - Electro-magnetic noise absorbing film - Google Patents

Description

1326886 发明Invention Description: (I) Field of the Invention The present invention relates to a magnetic material having a high magnetic permeability in a high frequency range, and more particularly to electromagnetic noise for suppressing a high frequency current which becomes noise. Absorbing film. (II) Prior Art The high magnetic permeability of the magnetic material cannot be realized by a semiconductor, and the sensing system can be utilized in a frequency range of a large range of several Hz to several hundreds of MHz. However, at these higher frequencies, the realization of high resistance or the control of the magnetic resonance phenomenon becomes difficult, and characteristics as shown at low frequencies cannot be obtained. However, with the increase in density of magnetic recording and the high frequency of the sensing element, the demand for magnetic materials operating in the GHz band is enhanced. The magnetic material which is conventionally used for high frequency use includes a ferrite iron, a metal film, a multilayer film of a composite metal and a non-magnetic insulator, or a granular film. The ferrite-based iron-based resistor is very high and is almost an insulator, and is used in a block shape because the eddy current is generated at a high frequency and is very small. However, at a high frequency of several 10 MHz or more, resonance vibration and rotational resonance of the magnetic wall are caused, and a so-called serpentine boundary line appears. Further, in order to increase the frequency, the film shape of several μχη or less is formed to increase the magnetic shape anisotropy, and the Snoek limit is effective, but in the formation of the ferrite grain iron phase having high magnetic permeability, There must be a treatment of about 10 °C, so the formation of the film becomes difficult, a non-practical example. Further, the metal thin film is represented by a high magnetic permeability alloy (Ni8QFe2Q) or an amorphous type 1326886 metal, and although a very high magnetic permeability is obtained, an eddy current is easily generated due to high conductivity, and the film thickness is restricted as it becomes a high frequency. . Especially in the case of GHz or more, when it is not more than 0.1 μm, the problem of eddy current is caused. Therefore, the use of the above-mentioned multilayer film, that is, the insulating film such as a metal thin film and an oxide, and the use of a film material for suppressing eddy currents, is limited by the reduction of the total magnetization and the complicated production process. The particle film is a film having a recently developed particle structure in which ferromagnetic metal fine particles are dispersed in a matrix such as an oxide to realize a resistance higher than a single digit of a metal. The particle structure is formed by laminating a metal and an oxide atomically, and a structure in which magnetic metal fine particles having a diameter of 10 nm or less are deposited in the oxide, specifically, a film by sputtering or the like. Technology to make. The particle film system can suppress or control the generation of the rotational resonance phenomenon in the GHz band because it can have high electric resistance and strong magnetic anisotropy due to the heterojunction of the fine particles. Although the particle film is considered to have a wider application range than the conventional film material, it has the following problems. First, the ferromagnetic metal microparticles of the particle structure are produced in a diameter of several nm, and in a state of independence, the strong magnetic properties (supernormal magnetic phenomenon) are lost due to heat disturbance at room temperature. In order to make it ferromagnetic, magnetic bonds are made between the microparticles to overcome thermal disturbances. At this time, the microparticles formed by the magnetic bonding exhibit a magnetic property of aggregation, and become high magnetic permeability. Namely, in order to obtain the properties as a high magnetic permeability film, the magnetic bond between the fine particles is indispensable. In this magnetic bond, there must be a metal bond between the particles in the insulator to reduce the resistance. Therefore, in the particle structure which is a parameter whose inverse magnetic permeability is inversely proportional to the electric resistance, there is an upper limit to the electric resistance. -7- 1326886 Secondly, in the application technology of high magnetic permeability materials in the GHz band, there are materials for reading and writing heads in magnetic recording, and electromagnetic noise absorbing materials for controlling the frequency band of rotational magnetic resonance absorption. The particle film is expected to be a noise absorbing material due to high resistance. However, in order to make the resonance absorption of the GHz band effective, it is known that a resistance of several digits is required. Among them, an object of the present invention is to provide an electromagnetic noise absorbing film which suppresses super-magnetic properties while improving electrical resistance and has a fine particle structure film which can control a rotational resonance phenomenon. (3) DISCLOSURE OF THE INVENTION In order to solve the above-mentioned problems, the inventors of the present invention have set a design policy of an electromagnetic noise absorbing material and found a new technology that can be specifically realized, and have completed the present invention. That is, according to the present invention, an electromagnetic noise absorbing film having a structure in which a column composed of various metals such as Fe' Co' or Ni or an alloy containing at least 20% by weight of such metals is obtained is obtained. The structural body is embedded in an inorganic insulating matrix of an oxide, a nitride or a fluoride or a mixture thereof. (4) Embodiments The best bear sample for carrying out the invention First, the principle of the present invention will be explained. In the particle structure, since the microparticles are formed by themselves, the shape is approximately spherical. At this time, the condition causing the extraordinary magnetic property is represented by the following general formula (1).

KuV/kT<1 1326886 wherein, in the above formula (1), k is a Potsman constant, T is a temperature (Kevin, K), and Ku is a magnetic anisotropy originally possessed by the metal fine particles. KuV is a magnetic energy having a particle which is at the same level as the thermal disturbance energy kT and exhibits extraordinary magnetic properties. The Fe or Co fine particles of the high-resistance particle film have a size of about 5 nm, and are completely in the boundary between the super-magnetic range and the super-magnetic state under the above conditions. However, in the particle structure, since the magnetic bonds are present between the microparticles, the super-magnetic property is suppressed. In order to increase the electric resistance, the oxide content is increased, and the magnetic bond is cut to form an extraordinary magnetic property. In the present invention, the shape magnetic anisotropy is artificially controlled to impart shape magnetic anisotropy as a method for increasing the Ku. Namely, the condition in which the extraordinary magnetic properties do not occur is changed by the following general formula (2).

Kt〇talV/kT> 1 'Kt〇tal= Ku+ Kus · (2) where the shape of the Kus-based fine particles is non-spherical, for example, the shape of the magnetic anisotropy, and is of the following formula ( 3) to express.

Kus = ( 1/2 ) NdMs2 (3) Further, in the above formula (3), Nd is a demagnetization boundary constant, and Ms is a saturation magnetization. In the case where the rod shape is sufficiently long, the Nd system is represented by the following general formula (4) because it is 4π in the longitudinal direction and 〇 in the direction perpendicular to the longitudinal direction.

Kus= 2kMs2 (4) Therefore, due to the non-spherical aggregate of the particle structure, if the structure existing together with the rod shape is formed, the critical magnetic volume of the extraordinary magnetic material can be made smaller, and the fine particle 1326886 can be increased. For example, Fe has 5xl05erg/ Ku of Cm3. In the usual particle structure, when spherical microparticles having a diameter of 5 nm are assumed, the following general formula (5) is established.

KuV/kT = 0.9. (5) The cylindrical fine particles having a diameter of 3 nm of Nd = 4π in the same volume become the following general formula (6).

Kus = ( 1/2 ) NdMs2 . (6) From the general formula (6), the following general formula is obtained.

Kt〇tai = Kus + Ku = 3><107 erg/cm3 Therefore, the following general formula (7) can be derived.

Kt〇taiV/kT=200 (7) From the above, by controlling the shape of the fine particles, even if the particles are independent of the insulator, the super-magnetic property can be suppressed, and the electric resistance rises rapidly. Secondly, the control of the magnetic permeability and the magnetic resonance frequency is described. The magnetic permeability μ and the magnetic resonance frequency fr are determined by the magnetic anisotropy Kt()tal of the fine particles. That is, it is represented by the following general formula (8) and general formula (9). μ = 2nMs2/K, otai · · · ( 8 ) fr = γχ ( 2Ktotai/Ms ) (9) However, in the above formula (9), γ is the home magnetic coefficient. Therefore, the magnetic permeability and the magnetic resonance frequency can also be controlled by the shape of the fine particles. The inventors of the present invention have completed the present invention by implementing a new technique that can specifically implement the above-described design guidelines. The invention is used in the composite materials described below. The composite material system 1326886 has a columnar structure composed of various pure metals of Fe, Co, or Ni or an alloy containing at least 20% by weight of such metals, which are embedded in oxides, nitrides, or fluorides or A structure in an inorganic insulating matrix of a mixture of substances. The composite material is used to make a film. The resulting film is referred to as an electromagnetic noise absorbing film. In the electromagnetic noise absorbing film, the columnar structure has a single magnetic domain structure, and the columnar structure has a diameter D of InmSDS 100Onm. Then, the ratio of the diameter D of the columnar structure to the length L (length to diameter ratio L/D) is 1 $ L/D ^ 1 000. Further, the electromagnetic noise absorbing film has a structure in which the columnar structure has a magnetization easy axis in the longitudinal direction and a plurality of columnar structures are repeatedly arranged substantially parallel to the diameter direction via the inorganic insulating matrix, and the plurality of columnar structures are arranged. The longitudinal direction of the columnar structures, the gap between the adjacent columnar structures (the thickness of the insulating matrix present in the gap) is in the range of 0 to 100 nm, and more desirably in the range of 0.1 nm to 1 000 nm (more desirably ~10nm) range. In the electromagnetic noise absorbing film, the columnar structure has a structure in which a plurality of the columnar structures are arranged in a long direction by overlapping the magnetizable precursors in the longitudinal direction. Then, the gap between the adjacent columnar structures (or the thickness of the insulating matrix existing in the gap) is in the range of 0.1 nm to 100 nm with respect to the diameter direction of the plurality of columnar structures, and electromagnetic noise The absorbing film is composed of a plurality of columnar structure layers which are superposed by an insulating matrix having a thickness in the range of 1 nm to 100 nm, and each of the columnar structure layers has a columnar structure 1326886 in which the aspect ratio L/D is different from each other. The magnetic layer formed. Furthermore, it is an electromagnetic noise absorbing film in which the saturation magnetostriction constant of the electromagnetic noise absorbing film is 値I | is 60S60 ppm, and the DC resistivity of the electromagnetic noise absorbing film is in the range of 102 to 109 μΩ · cm. . Further, the electromagnetic noise absorbing film is a film-shaped magnetic body having a thickness t, and a longitudinal direction of the columnar structure is slightly parallel to a thickness direction of the film-shaped magnetic body or a longitudinal direction of the columnar structure is opposite to the foregoing The thickness direction of the film-like magnetic body is formed so that the average angle Θ is inclined, and the enthalpy is in the range of 0$θ$9 0°. Further, since it is possible to have a magnetization easy axis in the thickness direction of the film and to increase the electric resistance in the surface direction, it is particularly effective, and the above-mentioned enthalpy is preferably in the range of 〇$θ$20°. The absorbing film is formed by a plurality of insulating mother bodies having a thickness t, and a magnetic layer composed of columnar structures having different aspect ratios L/D is formed. The electromagnetic noise absorbing film has a columnar structure corresponding to the columnar structure. The number of layers, or a plurality of magnetic resonances below it. Next, the present invention will be described in more detail. In the production of a film having a particle structure, the sputtering method is convenient and has been used until now due to the necessity of mixing oxide and ferromagnetic metal at the same time. In the sputtering method, since the kinetic energy of the particles incident on the substrate is very high, the oxide and the ferromagnetic metal can be efficiently mixed to become an approximately amorphous state. Therefore, the approximate particle material is obtained by the phase separation process by heat treatment to obtain the above-described particle structure. In the present invention, an oxide and a metal are produced by a secondary vapor deposition method. In the vapor deposition method, it is known that the columnar fine structure is formed in the process of accumulating overlying the substrate because the amount of movement of the raw material atoms or the 1326886 molecules on the substrate is extremely small. In the present invention, the principle of fabricating the columnar structure is utilized. Further, columnar (rod-shaped) fine particles which are effectively separated are formed by simultaneously forming an oxide and a metal on the substrate at an appropriate vapor deposition rate, i.e., a volume ratio. The particles having the ferromagnetic columnar body are referred to as a columnar particle structure. In the sputtering method, the particle shape of the treatment step for forming a particle by heat treatment or the like is a nearly spherical shape, and in the vapor deposition method, phase separation is performed even without heat treatment, and ferromagnetic metal is formed. Long columnar structure. Therefore, the ferromagnetic material which is independent due to the magnetic anisotropy of the shape as described above also becomes high in magnetic permeability. In controlling the magnetic permeability, the length of the ferromagnetic columnar body can also be shortened to change the shape magnetic anisotropy. The length of the ferromagnetic column is proportional to the evaporation source shutter opening time of the ferromagnetic body, and the length of the ferromagnetic column can be shortened by periodically switching the shutter. When the ferromagnetic columnar body becomes shorter, the Nd of the above formula (6) is lowered to 4π or less, and the magnetic permeability is increased by lowering the magnetic anisotropy. At the same time, the magnetic resonance frequency can also be changed by the relationship of the above formula (9). Further, by changing the shutter opening time in vapor deposition, a fine particle layer having a plurality of different resonance frequencies can be overlapped in one material. By this control method, different sharp magnetic resonance absorptions are connected in parallel, and since the magnetic loss in the desired frequency range can be correctly controlled, it is an effective method for improving the performance as an electromagnetic wave absorber. Further, in the conventional particle structure, since the magnetic anisotropy is generated due to the bonding between the particles, the direction is parallel to the film surface. Therefore, the magnitude of the magnetic permeability changes sensitively with the direction of the magnetic anisotropy. That is, there is strong in-plane directivity for the magnitude of the magnetic permeability [S ] -13 - 1326886. On the other hand, in the columnar particle structure of the present invention, magnetic anisotropy is exhibited in the film thickness direction, and no directivity is observed in the film surface. That is, the columnar particle structure has a characteristic of exhibiting an equal magnetic permeability, and is effective in the case where it is required to interfere with the absorption performance. However, since the magnitude of the magnetic permeability is equal to half of the case where it is in-plane directivity, the in-plane directivity can be configured for the use of the material in the present invention. In the vapor deposition method, the angle of the particles incident on the substrate can be controlled by changing the angle of the substrate relative to the evaporation source. That is, the longitudinal direction of the ferromagnetic columnar body can be freely inclined from the film thickness direction. When this method is used in the present invention, magnetic anisotropy which is inclined in the in-plane direction from the film thickness direction occurs as the ferromagnetic columnar body is inclined. Therefore, the magnetic permeability changes from the equal side to the magnetic permeability with directivity. In the above invention, the strong magnetic anisotropy is imparted in a desired direction from the film thickness direction to the in-plane, and the magnetic permeability direction 'size, resonance frequency, and frequency band thereof can be designed and controlled. At the same time, since the substrate can be freely selected without heat treatment, the special length can be produced at a high speed. Here, an example of the invention will be described. In the electron micrograph of Fig. 1, (a) is a particle structure obtained by a sputtering method (300 ° C, heat treatment for 1 hour), and (b) is a columnar shape obtained by vapor deposition on a film cross section. Constructor. As shown in Fig. 1 (a) and (b), in the sputtering method, the particle shape is formed into an approximately spherical shape by the particle forming step, and in the vapor deposition method, even if there is no heat treatment, In phase separation, the ferromagnetic metal forms a long columnar structure. The resistance of Fig. 1(a) is 1000 μΩ·cm, and Fig. 1326886 (b) is 1 ΟΟΟΟΟμΩ · cm. Referring to Fig. 2, the frequency characteristics of the magnetic permeability are shown, and in the vapor deposited film of Fig. 2(a), although the magnetic permeability is low, a sharp magnetic resonance loss is obtained at a specific frequency. This reason is due to the fact that magnetic anisotropy is generated due to aggregation of a preferred columnar structure, and there is almost no dispersion, so that a clear magnetic resonance occurs. Further, in the sputtering film of Fig. 2(b), resonance loss is found in a wide frequency range, and magnetic resonance in a desired frequency range cannot be obtained. The reason for this is that in the second figure (b), the magnetic anisotropy of the magnetic resonance is determined by the state of the interparticle bonding, and the dispersion is largely dispersed. Fig. 3 is a graph showing the relationship between the shutter opening time and the magnetic permeability and the resonance frequency by changing the shutter time in order to control the magnetic permeability to increase the magnetic permeability. As shown in Fig. 3, with the conventional particle film, it is possible to perform precise control of the magnetic permeability which is difficult. Further, by changing the shutter opening time in vapor deposition, a fine particle layer having a plurality of different resonance frequencies can be overlapped in one material. Referring to Fig. 4, the magnetic permeability of a case where a sample is made by changing the shutter time from 1 sec to 200 sec is judged to cause magnetic resonance in the entire approximate design band. Referring to Fig. 5 (a), (b) and (c), an example in which the in-plane directivity of the magnetic permeability is controlled by tilting the substrate will be described. First, as shown in Fig. 5 (a), the substrate is opposed to the evaporation source. In the case (ψ=〇), the directivity occurs in the case of the equal square and the tilt (Ψ=45°), and the direction of the measurement in μ is the y direction in the fifth figure (b) and (c) (0) = 〇 °), the magnetic permeability becomes larger. Next, the electromagnetic noise absorbing effect of the electromagnetic noise absorbing film obtained by the present invention is examined. [S] -15 - 1326886 As shown in Fig. 6, the electromagnetic noise absorbing film sample 61 obtained in the present invention is disposed on the microstrip line 62 formed of the microstrip conductor 62a formed on the insulating substrate 62b, The two ends of the microstrip line 62 are connected to the network analyzer 63 to observe the conduction characteristics S11 and S21. Referring to Figures 7 and 8, a description will be given of the conduction characteristics S11 and S21 when a plurality of electromagnetic noise absorbing film samples produced based on the examples of the present invention are placed on a microstrip line. As shown in Fig. 7, the reflection is shown. The size of the conduction characteristic S11 is not much different between the examples of the present invention and the comparative example, and in the case of using any sample, it is judged to be a practical amount of reflection. Further, the transmission characteristic S21 showing the transmission loss is as shown in Fig. 8. The sample of the present invention is larger than the comparative sample, and the electromagnetic noise absorption effect is high. Fig. 9(a) is a top view showing an example of an active component package circuit substrate which forms the electromagnetic noise absorbing film of the present invention on the grounding wire, and is schematically shown in a circuit diagram. Further, Fig. 9(b) is a side view of the electromagnetic noise absorbing film of Fig. 9(a). Fig. 10 is a view showing the effect of reducing the radiation noise of the electromagnetic noise absorbing film of Figs. 9(a) and 9(b). As shown in FIGS. 9(a) and 9(b), the electromagnetic noise absorbing film 71 produced by the present invention is formed on a part of the ground line 72 on the circuit substrate 73 on which the IC 7 1 is packaged as an active device. To compare the radiated electromagnetic noise generated when the circuit is driven. Further, C is a passive circuit element 74 such as a capacitor. As a result, as shown in Fig. 10, an electromagnetic noise absorbing film shown by a solid line curve 77 is formed on a portion of the circuit substrate to make the circuit. action

The degree of radio-magnetic noise observed at -16- 1326886 is greatly attenuated by the degree of radiated electromagnetic noise compared to the electromagnetic noise absorbing film not provided with the comparative example shown by the dashed curve 76. 'Inferred that an effective electromagnetic noise reduction effect can be obtained. In the example of the present invention described above, an example of providing an electromagnetic noise absorbing film on a circuit board on which an active device is mounted, for example, on a ground line, is described. The high-frequency current flowing portion, for example, a metal frame, which is provided on an electronic component including the same circuit board, a part of the data line, the active component, or an electronic component having the active component, can of course obtain an electronic noise reduction effect. As described above, the electromagnetic noise absorbing film according to the embodiment of the present invention has excellent magnetic permeability characteristics at high frequencies, particularly imaginary magnetic permeability characteristics, and the electromagnetic noise absorbing film using the electromagnetic noise absorbing film has a high The excellent noise absorption effect in the frequency is extremely effective for the control of high frequency electromagnetic noise which has become a problem in recent years. Moreover, according to the present invention, it is possible to provide an electromagnetic noise absorbing film comprising a fine particle structure film which suppresses super-magnetic properties and which has improved electrical resistance and can control a rotational resonance phenomenon. INDUSTRIAL APPLICABILITY The electromagnetic noise absorbing film according to the present invention can be controlled to be a high frequency current of noise, and can be used for an electronic device or an electric machine starting from a personal computer, a mobile terminal, or the like. (5) Brief description of the drawings: Fig. 1(a) shows the electron microscopy of the particles produced by the sputtering method [S 3 -17- 1326886 structure (300 ° C, heat treatment for 1 hour) on the inner surface of the film. Photograph; (b) An electron micrograph of the columnar structure produced by vapor deposition observed in the cross section of the film. Fig. 2 is a graph showing the frequency characteristics of the permeability of the film; (a) and (b) show the frequency characteristics of the permeability of the vapor deposited film and the sputter film. Fig. 3 is a graph showing the relationship between the magnetic permeability and the resonance frequency which are controlled by changing the shutter time. Fig. 4 is a graph showing the results of magnetic permeability measurement in the case where the shutter time is changed from 10 seconds to 200 seconds to show a sample. Fig. 5(a) is a view showing an example of slanting a substrate to control the in-plane directivity of permeability; (b) showing an angle of inclination of a vapor deposition source, a substrate, and a substrate; (c) showing a measurement pattern of μ. Fig. 6 is a view showing a configuration of a schematic device for verification of an electromagnetic noise suppression effect. Fig. 7 is a view showing a reflection characteristic S11 of a case where a plurality of electromagnetic noise absorbing film samples produced based on the present invention are placed on a microstrip line. Fig. 8 is a view showing the conduction characteristic S21 of a case where a plurality of electromagnetic noise absorbing film samples produced based on the present invention are placed on a microstrip line. Fig. 9(a) is a top view of the active component package circuit board on which the electromagnetic noise absorbing film obtained by the present invention is formed on the ground line: (b) A side view of the electromagnetic noise absorbing film of the system (a). Fig. 10 is a view showing the effect of reducing the radiation noise of the electromagnetic interference absorption film of Figs. 9(a) and (b).

Claims (1)

No. 93 10603 No. 1 "Electromagnetic Noise Absorbing Film" Patent (Amended on March 17, 2010) Pickup, Patent Application Range: 1 - An electromagnetic noise absorbing film characterized by having a structure, which is made of Fe a columnar structure composed of various pure metals of Co, or Ni, or an alloy containing at least 20% by weight of such metals, embedded in an inorganic insulating matrix of an oxide, a nitride or a fluoride or a mixture thereof; The ratio of the diameter D to the length L of the columnar structure (length to diameter ratio L/D) is 1 < L / D $ 1 〇〇〇. 2. The electromagnetic noise absorbing film of claim 1, wherein the columnar structure has a single magnetic domain structure. 3. The electromagnetic noise absorbing film according to claim 1 or 2, wherein the columnar structure has a diameter D of 1 nm SD '1000 nm. 4. The electromagnetic noise absorbing film according to claim 1 or 2, wherein the columnar structure has a magnetization easy axis in a long direction and has a repeating structure, which is approximately parallel in a diameter direction via the insulating matrix A plurality of columnar structures are arranged in the ground. 5. The electromagnetic noise absorbing film according to item 4 of the patent application, wherein the length direction of the plurality of columnar structures is in a gap of an adjacent columnar structure or the insulating matrix existing in the gap The thickness is in the range of 0.1 nm to 1000 nm. 6. The electromagnetic noise absorbing film according to claim 1 or 2, wherein the columnar structure has a magnetization easy axis in a long direction and has a repetitive structure in a long direction via the inorganic insulating matrix A plurality of the columnar structures are arranged in an overlapping manner. 1326m-~j 立立A月丨]曰修(]^正泠泠 page is. —一———»»一一一__,, 一一一-- 7. Electromagnetic application as in claim 6 The noise absorbing film, wherein the thickness of the adjacent columnar structure or the thickness of the insulating matrix present in the gap is in the range of 0.1 nm to 100 nm with respect to the diameter direction of the plurality of columnar structures. An electromagnetic noise absorbing film according to claim 7 which is composed of a plurality of columnar structure layers which are overlapped by an insulating matrix having a thickness in the range of 1 nm to 100 nm, wherein each of the columnar structure layers is long A magnetic layer composed of a columnar structure having a diameter ratio L/D different from each other. 9. The electromagnetic noise absorbing film according to claim 1 or 2, wherein the electromagnetic resonance absorption film of the electromagnetic noise absorbing film is absolutely absolute値|λβ| is |λβ| S60ppm. 10. The electromagnetic noise absorbing film according to claim 1 or 2, wherein the electromagnetic noise absorbing film has a resistivity of DC of 1 〇 2 to 109 μΩ · cm. Scope* 11. Electromagnetic noise absorption thinner as claimed in item 1 or 2 of the patent application Wherein the electromagnetic noise absorbing film is a film-like magnetic body, and the longitudinal direction of the columnar structure is approximately parallel to the thickness direction of the film-like magnetic body. 12. Any one of claims 1 or 2 of the patent application scope An electromagnetic noise absorbing film, wherein the electromagnetic noise absorbing film is a film-like magnetic body formed such that a longitudinal direction of the columnar structure is inclined only by an average angle Θ with respect to a thickness direction of the film-shaped magnetic body, Θ is in the range of 05θ$90°. 13. The electromagnetic noise absorbing film according to item 8 of the patent application is formed as a magnetic layer composed of columnar structures having different aspect ratios L/D through an insulating matrix. a plurality of overlapping electromagnetic noise absorbing films having a number corresponding to the number of layers of the columnar structure, or a number of times less than the number of times (h) is replacing the number of pages of magnetic resonance. A circuit substrate characterized by The electromagnetic noise absorbing film according to any one of claims 1 to 13 is included in the wiring. 1326886 Fig. 6 62 6/9 1326886 柒, designated representative map: (1) The representative representative of the case is: (ib). (2) A brief description of the symbol of the symbol of this representative figure: Μ .捌 If there is a chemical formula in this case, please reveal the chemical formula that best shows the characteristics of the invention: value.