TWI325522B - - Google Patents
Download PDFInfo
- Publication number
- TWI325522B TWI325522B TW95118337A TW95118337A TWI325522B TW I325522 B TWI325522 B TW I325522B TW 95118337 A TW95118337 A TW 95118337A TW 95118337 A TW95118337 A TW 95118337A TW I325522 B TWI325522 B TW I325522B
- Authority
- TW
- Taiwan
- Prior art keywords
- switch
- coupled
- source
- circuit
- adjustment circuit
- Prior art date
Links
Landscapes
- Electronic Switches (AREA)
- Control Of Electrical Variables (AREA)
Description
1325522 丨月聊修 正替換頁 98-12-24 九、發明說明: 【發明所屬之技術領域】1325522 丨月聊修 Replacement page 98-12-24 Nine, invention description: [Technical field of invention]
^本發明係為提供一種調整電路,其内部之偵測電路無 論保險絲是否確實麟,該侧魏皆會制到其電晶& 開關之電阻與制電路之電阻有無增加的相對關係,因此 邏輯控制ϋ可依其所收_偵測位準信號,並配合邏輯轉 換機制輸出”開”或”關·,給相對之電晶體開關之功效者。The present invention provides an adjustment circuit in which the internal detection circuit determines whether the resistance of the switch and the resistance of the circuit are increased or not, regardless of whether the fuse is positive or not. The control unit can detect the level signal according to the received signal, and cooperate with the logic conversion mechanism to output "on" or "off" to the function of the relative transistor switch.
【先前技術】 仪,曰刖牛導體工業正走向以設計為主之趨勢… ▼領下’又以二C整合與系統單晶片(soc)的發 ^為炙手可熱,@為#重點放在低價格、高效能、[Prior Art] Instrument, yak conductor industry is moving towards the design-oriented trend... ▼Leading again with the second C integration and system single-chip (soc) hair is hot, @为# focus on low price ,high efficiency,
輕缚短小、可卿這幾•面時,唯有在更精確的 減更好_紅祕町彳能❹卜巾齡單位 所能容納的電晶體數目越來鮮愈多,林類元件=敕人 也成為逐漸在開發者的努力下有顯著的成果。、、王口 “ 種晶片電路上’都需要參考電壓產生電路來 右故我們以此為範例說明;電壓參考源的主 切外界細素做—有效_ = 的偏差,所以’相關業者為了解決此輪出電 H = 遂以複數個小電阻串聯於主要電來差之問碭’ -3斤不’係μ用參考電壓產生電路之電路圖及 5 22 22 98-12-When the light binding is short and the number of faces can be clear, only the more accurate reduction is better. The number of crystals that can be accommodated in the unit of the red age is more and more, the forest components = 敕People have also gradually achieved remarkable results under the efforts of developers. , Wangkou "on the chip circuit" need a reference voltage generation circuit to the right, so we use this as an example; the main reference of the voltage reference source to the external fine - effective _ = deviation, so the relevant industry to solve this The power output of the wheel is H = 遂, the number of small resistors connected in series to the main electrical difference 砀 ' -3 kg not 'system diagram of the reference voltage generation circuit for μ and 5 22 22 98-12-
電壓輸出表,由圖中可、、杳^ . 壓的偏差’係於參考;=路=為要 電路包含錢㈣㈣於主要電 葬此,電阻B1為分別並聯有保險絲B2, ‘之動I: =B1來微調主要電阻A1的絕對值,而微 達成。電阻B1所並聯的保險絲B2被燒斷與否來 述之Ϊ多ίί Μ之參考電驗生電路,實存在如下列所 1、習用之參考電壓產生電路Α於晶片製成後,… =斷,絲B2,而不能新增保險絲B2,所以, “Si::調’晶片在未處理前,所有的保險絲B2 ^计為未燒斷(短路)’所以其 出電壓A2必定是偏低的(如圖2;二壓產生電路A的輸 當電為利用電流來做燒斷之動作,而 ;備=:確預知需求的邏輯“。”或-之設定= 欲二===’便為從事此行業編 之必要。 料相關業者作進-步改良與創新設計 1325522 98·12·24 〜Ό 然,為了達成上述習用之缺失而由申請人設計另一種 偵測調整電路,係為利用電壓參考電路之主要電阻上設置 有複數與主要電阻串聯之調整電阻,而各電阻分別並聯有 電晶體開關且連接於邏輯控制器,邏輯控制器依據邏輯轉 換表轉換接收到電壓位準控制相對之電晶體開關,進而發 出··〇’·代表未燒斷或"1”代表燒斷之電壓位準給邏輯控制 器’以決定各電晶體開關的導通與否。 二The voltage output table, from the figure, can be used to refer to the deviation of the voltage 'in the reference; = road = the circuit contains money (4) (four) in the main burial, the resistor B1 is connected to the fuse B2, 'moving I: =B1 to fine tune the absolute value of the main resistor A1, and micro-achieve. The fuse B2 in parallel with the resistor B1 is blown or not. The reference electric test circuit is as follows. 1. The reference voltage generating circuit used in the following is used after the wafer is fabricated, ... = off, Wire B2, but the fuse B2 cannot be added. Therefore, before the "Si:: tuning" wafer is unprocessed, all the fuses B2 ^ are counted as unbaked (short circuit)' so the output voltage A2 must be low (such as Figure 2; the power generation of the two-voltage generating circuit A is the action of using the current to make the blow, and the standby =: the logic of the predicted demand "." or - the setting = the desire ===' is to engage in this It is necessary for the industry to compile. The relevant industry is making progress and innovation design 1325522 98·12·24 ~Ό, in order to achieve the above-mentioned lack of use, the applicant designed another detection adjustment circuit, which is to use the voltage reference circuit. The main resistor is provided with a plurality of adjusting resistors connected in series with the main resistor, and each resistor is connected in parallel with a transistor switch and connected to the logic controller, and the logic controller converts and receives the voltage level control relative to the transistor switch according to the logic conversion table. And then issued • 〇’· represents unburned or "1” represents the voltage level of the blow to the logic controller' to determine whether the transistor switches are turned on or off.
【發明内容】 今,發明人有鑑於上述偵測調整器的缺失與不足,故 發明人利用此行業之多年研究發明經驗,經不斷改良與實 驗,終於發明出此種可程式之偵測調整器。 /、貝SUMMARY OF THE INVENTION Nowadays, in view of the lack and deficiency of the above-mentioned detection adjuster, the inventor has invented such a programmable detection adjuster by continuously improving and experimenting with the experience of many years of research and invention in this industry. . /,shell
。本發明之主要目的乃在於利用調整電路所設置之邏 輯控制器來控制電晶體開關的導通與否,用以微調電壓參 ,電路之主要電阻的絕對值,使電壓參考電路所輸出之電 夏,在未微凋處理前不會產生電壓偏低的情形。 本發明之次要目的乃在於無論偵測電路之保險絲是 否k斷,該保險絲之電阻值與偵測電路之電阻的電阻值相 比較,皆有其相對關係’因此在生產該可程式之制調整 裔時’僅需針對使用者在出貨前之需求並調整邏輯控制器 之相對關係,以簡化備料的缺失。 【實施方式】 為達成上述目的及構造,並為使審查委員能對於本 7 _ _ _ 、 -τ * - *«.9 L _ »· ·._·»*»·»· - — 98-12-24 發明之目的及功效有更進一步之膝 俾利完全暸解 技術手段,S_就本發明之較’故本發明所採用之 丨…ϋ貫施例詳加說明如下, 中τ:ί:! H係為本發明之電路圖,由圖3α 看出,本發明係於電壓參考_(bandgap)i所設 =主要電阻11上連接調整電路2,而該調整電路2具有 要電阻11串聯之調整電阻21,而調整電阻21 晶體開關22’且各電晶體開關22為連接於. The main purpose of the present invention is to control the conduction of the transistor switch by using a logic controller provided by the adjustment circuit for fine-tuning the voltage parameter, the absolute value of the main resistance of the circuit, and the electric summer output of the voltage reference circuit. There is no case where the voltage is low before the treatment is carried out. The secondary object of the present invention is that regardless of whether the fuse of the detecting circuit is broken or not, the resistance value of the fuse is compared with the resistance value of the resistance of the detecting circuit, and the relative relationship is the same. When it comes to 'requires the user's needs before shipment and adjust the relative relationship of the logic controller to simplify the lack of stock. [Embodiment] In order to achieve the above object and structure, and in order to enable the reviewing committee to be able to do this 7 _ _ _ , -τ * - *«.9 L _ »· ·._·»*»·»· - 98- 12-24 The purpose and effect of the invention has a further understanding of the technical means, S_ is based on the invention, and the method adopted by the present invention is described in detail as follows: τ:ί: H is the circuit diagram of the present invention. As seen from FIG. 3α, the present invention is connected to the adjustment circuit 2 on the main reference 11 of the voltage reference _ (bandgap) i, and the adjustment circuit 2 has the adjustment of the series connection of the resistors 11. Resistor 21, and adjusting resistor 21 crystal switch 22' and each transistor switch 22 is connected to
而邏輯控制1123為依序連接有與電晶體 ! 里相等之偵測電路24。於此,雖然圖3A中僅繪 =出3個調整電阻21與3個電晶體_ 22 *已,但是本 發明並不限制於此。 曰換5之,於本貫施例中,調整電阻21的數量係與電 曰曰趾開關22以及偵測電路24的數量相同,且第丨個電晶 體開關22對應於第i個調整電阻21(i為正整數),而第土 ,偵測電路24對應於第i個電晶體開關22。以圖3A來說, 第1個電晶體開關22 (圖3A最上方的那一個電晶體開關 22)對應於第】個調整電阻21(即標示有4R的調整電阻); 第2個電晶體開關22(圖3A中間的那一個電晶體開關22) 對應於第2個調整電阻21 (即標示有2R的調整電阻); 而第3個電晶體開關22 (圖3A最下方的那一個電晶體開 關22 )對應於第3個調整電阻21 (即標示有R的調整電 阻)。 另外’第1個偵測電路24 (圖3A最上方的那一個偵 8 98-12-24 Z電路24)對應於第Π固電晶體開關2 那-個電晶體開關22);第 ^上方的 的那-個偵測電路24)對庫第^個、24 (圖3Α中間 3Α中間的那—個電晶關22(圖 (圖3A中最下方的那一個^二:偵測電路24 :: 曰組=22(圖从最下方的那—個電晶體開關如。The logic control 1123 is connected to the detection circuit 24 which is equal to the transistor ! Here, although only three adjustment resistors 21 and three transistors _ 22 * have been drawn in Fig. 3A, the present invention is not limited thereto. In the present embodiment, the number of the adjustment resistors 21 is the same as that of the electric toe switch 22 and the detection circuit 24, and the second transistor switch 22 corresponds to the ith adjustment resistor 21 (i is a positive integer), and the earth, detection circuit 24 corresponds to the i-th transistor switch 22. As shown in FIG. 3A, the first transistor switch 22 (the transistor switch 22 at the top of FIG. 3A) corresponds to the first adjustment resistor 21 (ie, the adjustment resistor labeled 4R); the second transistor switch 22 (the transistor switch 22 in the middle of FIG. 3A) corresponds to the second adjustment resistor 21 (ie, the adjustment resistor labeled 2R); and the third transistor switch 22 (the transistor switch at the bottom of FIG. 3A) 22) corresponds to the third adjustment resistor 21 (ie, the adjustment resistor labeled R). In addition, the 'first detection circuit 24 (the one at the top of Fig. 3A is 8 98-12-24 Z circuit 24) corresponds to the first solid crystal switch 2 - the transistor switch 22); That detection circuit 24) for the library, 24 (the middle of the middle 3 图 — — — 22 ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( (曰 group = 22 (the figure from the bottom of the - a transistor switch such as.
^上柄解釋,本發明領域具錢f知識者應不難 ^ 3以上的實施例’故而在此並不再加 表(t η然:右1為3以上時,以下所述之邏輯轉換 二:必須做相應的修改’然由於這樣的修改仍可 =由底下實施例的揭示内容而得知,故而在此也不再加以 負述之。於此’以下内容僅以i等於3的實施例做一詳加 描述給本發明領域具有通常知識者明瞭。^Upper handle interpretation, the field of the invention has a wealth of knowledge should not be difficult ^ 3 or more embodiments 'There is no longer a table here (t η 然: right 1 is more than 3, the following logical conversion two : The corresponding modification must be made. However, since such a modification can still be known from the disclosure of the following embodiment, it will not be described here. Therefore, the following is only an example in which i is equal to 3. A detailed description will be apparent to those of ordinary skill in the art.
再請同時參閱圖3A與圖4所示,係為本發明之電路 圖及可程式偵測電路之示意電路圖(―”由圖中可清楚得 知,當調整電路2對電壓參考電路(bandgap)1所輸出之輸 出電壓(VBG) 12進行微調時,各彳貞測電路24會彳貞測保險絲 249是否燒斷以及偵測第三電晶體開關248之閘極是否有 大電流流經保險絲249,保險絲249若燒斷,則偵測電路 24會輸出高位準電壓(亦即偵測訊號)給邏輯控制器23,反 之,則輸出低位準電壓給邏輯控制器23;另外,保險絲249 是否要做燒斷處理則改由控制第三電晶體開關248之導通 與否決定’但流經保險絲249之電流將受第三電晶體開關 248之阻抗限制’若不夠大而導致保險絲249未被燒斷之 9 1325522 =發生時,則需用圖5所示之_電路24來 路24内之電阻247餘增加的相對關係以決定輸出低位= 或南位準之電壓給邏輯控制器23,此時無論保險絲屬f 否燒斷,也不致影響到最後電壓參考電路Γ的輪出。換^ 流經保險絲249之電流不夠大而導致保險絲24& 破燒啤之情況發生時,圖5所示之债測電路= 部流經保險絲、249之電流與流經電阻R之電^ 内 而產生偵測訊號給邏輯控制器23(容後再詳述卜,”’從 於本實施例中’當邏輯控制器23接收到電壓位粋 J二即會依邏繪示如圖3Β的輯轉換表轉換 : 準^虎之相對關係,來控制相對之電晶體開關㈣開關, 電路!之主要電阻 =絕對值。如此,在晶片未處理前,可== 23再配合圖3B所示之邏輯轉換表來調整電晶工= ,以避免晶片未處理但保險絲全保留時:關: 參考電路1的輸出電壓12偏低的問題。 土 = f 開關 NM〇S或PM〇S,且此種簡易修飾及等效二3 = 同理包含於本發明之專利範_,合予陳^ 勺應 ,此’請同時參_ 3與圖4所示,係為本 3及^式_電路之示意電路圖㈠,由圖中可清Ϊ 看出,制電路24包括反向器241〜244、nm〇s電晶^ 10 1325522 98-12-24' 245與246(第一與第二電晶體開關)、電陴247、PMOS電 晶體248(第三電晶體開關)、保險絲249,以及缓衝器250。 其中,反向器241的輸入端用以接收一開機重置訊號 (power;on reset signal)POR。反向器242的輸入端麵接反向 器241的輸出端。NMOS電晶體245的閘極耦接反向器241 的輸出端’而NMOS電晶體245的源極則耦接至接地電位。Please refer to FIG. 3A and FIG. 4 at the same time, which is a schematic circuit diagram of the circuit diagram and the programmable detection circuit of the present invention ("" can be clearly seen from the figure, when the adjustment circuit 2 pairs the voltage reference circuit (bandgap) 1 When the output voltage (VBG) 12 is fine-tuned, each of the detection circuits 24 detects whether the fuse 249 is blown and detects whether the gate of the third transistor switch 248 has a large current flowing through the fuse 249, and the fuse If the 249 is blown, the detecting circuit 24 outputs a high level voltage (ie, a detection signal) to the logic controller 23, and vice versa, outputs a low level voltage to the logic controller 23; in addition, whether the fuse 249 is to be blown. The process is determined by controlling whether the third transistor switch 248 is turned on or not, but the current flowing through the fuse 249 will be limited by the impedance of the third transistor switch 248. If the voltage is not large enough, the fuse 249 is not blown. 13 1325522 When the occurrence occurs, the relative relationship of the resistance 247 in the circuit 24 shown in FIG. 5 is used to determine the output low level = or the south level voltage to the logic controller 23, regardless of whether the fuse is f or not. No blown, also As a result, the final voltage reference circuit Γ turns out. The current flowing through the fuse 249 is not large enough to cause the fuse 24& the broken beer situation occurs, the debt measurement circuit shown in Figure 5 flows through the fuse, 249 The current and the current flowing through the resistor R generate a detection signal to the logic controller 23 (to be detailed later), 'from the present embodiment, when the logic controller 23 receives the voltage level 粋J II That is, according to the logic diagram shown in Figure 3Β conversion table conversion: the relative relationship between the tiger and the tiger, to control the relative transistor switch (four) switch, circuit! The main resistance = absolute value. Thus, before the wafer is processed, == 23 Then adjust the electro-crystallizer = with the logic conversion table shown in Figure 3B to avoid the wafer being unprocessed but the fuse is fully retained: Off: The problem of the output voltage 12 of the reference circuit 1 is low. Soil = f Switch NM 〇S or PM〇S, and such a simple modification and equivalent two 3 = the same is included in the patent _ of the present invention, and the combination of the ^ ^ 应, this 'Please also refer to _ 3 and Figure 4, For the schematic circuit diagram (1) of the 3 and ^ _ circuits, as can be seen from the figure, the circuit 24 includes Inverters 241 to 244, nm 〇s electro-crystals 10 1325522 98-12-24' 245 and 246 (first and second transistor switches), electric 247, PMOS transistor 248 (third transistor switch) The fuse 249, and the buffer 250. The input end of the inverter 241 is configured to receive a power on reset signal (POR). The input end of the inverter 242 is connected to the inverter 241. The output terminal of the NMOS transistor 245 is coupled to the output terminal of the inverter 241 and the source of the NMOS transistor 245 is coupled to the ground potential.
反向器243的輸入端耦接NMOS電晶體245的汲極。 反向器244的輸入端耦接反向器243的輸出端,而反向器 244的輸出端則柄接反向器243的輸入端。NMOS電晶體The input of the inverter 243 is coupled to the drain of the NMOS transistor 245. The input of the inverter 244 is coupled to the output of the inverter 243, and the output of the inverter 244 is coupled to the input of the inverter 243. NMOS transistor
246的閘極耦接反向器242的輸出端,NMOS電晶體246 的沒極耦接反向器244的輸入端,而NMOS電晶體246的 源極則耦接電阻247的第一端。緩衝器25〇的輸入端耦接 反向益244的輸入端,而緩衝器250的輸出端則耦接邏輯 控制器23以輪出偵測訊號。PM〇s電晶體2似的閘極用以 接收-調整訊號(ton signal)Trim,PM〇s電晶體施的源 極?接電源VCC’PMQS電晶體248的汲極輕接保險絲249 的第-端與電阻247的第二端’而保險絲2奶 耦接至接地電位。 ' 門關248 §保險絲249未燒斷時或第三電晶體 開關248之電阻無增加的姆祕 示,此時雜路24為輸出一低電厂 以使邏輯㈣||23可依其所收到的_。=: 對關係,並配合邏輯轉_制輪出,,開,,或”關 晶體開關22,以控制各電晶體_ 22的導通与,子 98-12-24^=- 電路1之主要電卩且11 各輕電阻21來微調主 11的絕對值1達到無偏差的調整目的。 —立=4參閱圖5所示’係為本發明之可程式偵測電 路圖㈡’由該圖可以清楚看出,_電路24包括 電晶體M3〜M5與248、NM〇s電晶體M〇〜M2、電 Λ/Π从保險糸249 ’以及緩衝器250。其中,PM0S電晶體 ΡΜ〇ς ΐ極用以接收—檢測訊號(麵6 Signal)SenSe,而 S電晶_3的源_叙接至電源vcc。應〇 體M0的間極與汲_接pM〇 = NM〇S電晶體_的源極貝馳至接地電位。 而 炸晶體M1的閘極祕麵S電晶體M0的閘 極pNM〇S電晶體M1的源極搞接電阻R的第-端’而^ 至接地電位。雜電晶體M4 _ 接至—電晶體而:的 t ^ vcc,Tpmos Γδ 1 Βθθ ^ M5 ^ 電晶體綱的閑極。電曰曰體M5的閘極則耗接m〇s 絲NMOS ί Γ體M2的間極輕接NM〇S電晶體M0的閘 : 的沒極麵接咖電晶體Μ5的沒 曰曰體M2的源極搞接保險絲249的第-端, 而保險絲的第二端則轉接至接地電位。緩衝哭250的 電晶體M2的汲極’而緩衝器25〇 出端則減邏輯控制器23以輸出偵測訊號。pMQs電^ 248的源極麵接電源Vcc,pM〇s電晶體冰的閘極用以 12The gate of the NMOS transistor 246 is coupled to the input of the inverter 244, and the source of the NMOS transistor 246 is coupled to the first terminal of the resistor 247. The input of the buffer 25A is coupled to the input of the reverse benefit 244, and the output of the buffer 250 is coupled to the logic controller 23 to rotate the detection signal. The gate of the PM〇s transistor 2 is used to receive the ton signal Trim, the source of the PM〇s transistor is connected to the power supply VCC'PMQS transistor 248, the bottom of the bucking fuse 249 - The terminal is coupled to the second end of the resistor 247 and the fuse 2 is coupled to the ground potential. 'Dogate 248 § When the fuse 249 is not blown or the resistance of the third transistor switch 248 is not increased, the hybrid 24 is outputting a low power plant so that the logic (4)||23 can be received To _. =: For the relationship, and with the logic to turn the system, turn,, or "off the crystal switch 22, to control the conduction of each transistor _ 22, the sub-98-12-24 ^ = - the main electricity of the circuit 1 1111 each light resistor 21 to fine-tune the absolute value 1 of the main 11 to achieve the purpose of unbiased adjustment. - Li = 4 see Figure 5 is a programmable detection circuit diagram of the invention (2) ' can be clearly seen from the figure The _ circuit 24 includes transistors M3 〜 M5 and 248, NM 〇 s transistors M 〇 M M2, Λ Π 糸 糸 249 ′ and buffer 250. The PMOS transistor is used for ΐ ΐ Receive-detection signal (surface 6 Signal) SenSe, and the source of S-electrode_3 is connected to the power supply vcc. The source of the body M0 and the source of the 汲_pTM〇=NM〇S transistor_ The ground terminal is grounded. The gate of the crystal M1 of the blown crystal M1 is the gate of the transistor M0. The source of the transistor M1 is connected to the first end of the resistor R and is connected to the ground potential. The transistor M4 _ Connected to - transistor: t ^ vcc, Tpmos Γ δ 1 Β θθ ^ M5 ^ The idle pole of the transistor class. The gate of the electric body M5 consumes m〇s wire NMOS ί Γ body M2 Connected to NM〇S Gate of M0: The source of the M2 of the immersed face of the coffee machine Μ5 is connected to the first end of the fuse 249, and the second end of the fuse is transferred to the ground potential. The drain of M2' and the buffer 25 output terminal minus the logic controller 23 to output the detection signal. The source of the pMQs 248 is connected to the power supply Vcc, and the gate of the pM〇s transistor ice is used for 12
2月zy0修正替換頁I 98-12-24 ' 接收調整訊號(trim signal)Trim,而pM0S電晶體248的汲 極則耦接保險絲249的第一端。 基於上述’當偵測電路24偵測電晶體M3有一大電流 經過時,因電流鏡之關係,若保險絲249之阻值比預設的 電阻R小,則流經電晶體M2的電流比電晶體M1大,且 電晶體Μ1的電流會經電晶體M4電流鏡傳到電晶體M 5, 故電晶體Μ 5電流小於電晶體M 2,因此谓測電路2 4輸出 鲁 的邏輯將是“〇”或是“關”,反之,若保險絲249值比預設的 電阻R大,偵測電路24將輸出的邏輯將是“,,或是“開”; 再者,請參閱圖6所示,依據上述電路之配置以及電流鏡 之作用,第三電晶體開關248以及保險絲249可設置於電 源端,藉此亦可達到無偏差的調整電壓目的之功效。 更請楚來說,圖6所繪示之偵測電路24包括NM〇s 電晶體M0〜M3與248、PMOS電晶體M4與M5、電阻R、 保險絲249 ’以及緩衝器250。其中,NM〇s電晶體 • 的閘極用以接收一檢測訊號Sense,而NM〇s電晶體Μ] 的源極則耦接至接地電位。NMOS電晶體M0的汲極耦接 電源VCC、電阻R的第一端以及保險絲249的第一端,而 NMOS電晶體M0的閘極與源極則耦接NM〇s電晶體M3 的汲極。NMOS電晶體Ml的汲極耦接電阻尺的^0二端, 而NMOS電晶體Ml的閘極則耦接NMOS電晶體的閘 極。 PMOS電晶體M4的源極與閘極耦接NM〇s電晶體 Ml的源極,而PMOS電晶體M4的汲極則耦接至接:電 13 1325522 98-12February zy0 correction replaces page I 98-12-24 ' receives the trim signal Trim, and the drain of pM0S transistor 248 couples the first end of fuse 249. Based on the above, when the detecting circuit 24 detects that a large current has passed through the transistor M3, due to the relationship of the current mirror, if the resistance of the fuse 249 is smaller than the preset resistance R, the current flowing through the transistor M2 is higher than that of the transistor. M1 is large, and the current of the transistor Μ1 is transmitted to the transistor M 5 through the transistor M4 current mirror, so the transistor Μ 5 current is smaller than the transistor M 2 , so the logic of the output circuit 24 output Lu will be “〇” Or "off", conversely, if the value of the fuse 249 is greater than the preset resistance R, the logic that the detection circuit 24 will output will be ", or "on"; again, as shown in Figure 6, based on The configuration of the above circuit and the function of the current mirror, the third transistor switch 248 and the fuse 249 can be set at the power supply end, thereby achieving the effect of adjusting the voltage without deviation. Further, please refer to FIG. The detecting circuit 24 includes NM〇s transistors M0 to M3 and 248, PMOS transistors M4 and M5, a resistor R, a fuse 249', and a buffer 250. The gate of the NM〇s transistor is used to receive a Sense signal Sense is detected, and the source of NM〇s transistor Μ] is coupled to The potential of the NMOS transistor M0 is coupled to the power supply VCC, the first end of the resistor R, and the first end of the fuse 249, and the gate and the source of the NMOS transistor M0 are coupled to the NM〇s transistor M3. The drain of the NMOS transistor M1 is coupled to the two ends of the resistor scale, and the gate of the NMOS transistor M1 is coupled to the gate of the NMOS transistor. The source of the PMOS transistor M4 is coupled to the gate NM. 〇s the source of the transistor M1, and the drain of the PMOS transistor M4 is coupled to: 13 1325522 98-12
$年12月#曰修正替換頁I 位。NMOS電晶體M2的閘極耦接NM〇s電晶體的閘極, NMOS電晶體M2岐極則耦接保險絲249的第二端。 PMOS電晶體M5的間極_ NM〇s電晶體綱的沒極, PMOS電晶體的源極減NM〇s電晶體M2的源極, 而PMOS電晶體M5的汲極則耦接至接地電位。 NMOS電晶體248的閘極用以接收—調整訊雖如 s|g=Tnm ’ NM0S電晶體撕的汲極麵接保險絲撕的 ,二,* NMOS電晶體248的源極則輕接至接地電位。 緩衝器250的輸入端轉接PMOS «晶體M5的源極,而緩 ,器25G的輸出端_接邏輯㈣器23以輸㈣測訊號。 土此、於圖6之偵測單元24的運作原理係類似於圖5 之偵測單元24,故而在此並不再加以贅述之。 疋以,本發明之可程式之偵測調整器 技術關鍵在於: ° 。(-)本發明為彻罐電路2所設置複數串聯之調整 電阻21並將各調整電阻21分別並财電晶體開關a, 而各電晶體_ 22為連接於邏輯控 23,使邏輯電路 於接收到制位準時,會依據邏輯轉換表輸出T或,T.給 相對之電晶體開關22 ’以控制各電晶體開關22的導通^ 並使電壓參考電路丨之主要電阻u可利用調整電路^ 叹置之調整電阻21來微調其的絕對值,進—步使電壓泉 電路1所輸出之電壓不產生偏低的情形。 ㈡本發明為利用調整電路2來偵測保險絲249的 與否,以及偵測電路24之電阻247有無增加的相對關 14 ^(1 98-12-24 器' 23'可^壓位準給邏輯控制11 Μ,使邏輯控制 ,轉'249於進^曰體開關22的導通或關閉,且在保險 1直接連接,測電路24並未與電壓參考電路 的情形時,也不^ ^保險絲249之電流發生控制不當 電路1失去作用I壤到電壓參考電路1,而使電壓參考 兔上田t)本發明為利用偵測電路24及邏輯於制器μ令 • <调電麈參考電路lm· ^ 铒徑制盗23’來 PAD之數量χ 1阻11醜龍,而不需增加 以避免佔用太多之空間。 夕2四)本發明為利用偵測電路24來檢視债測電路24 λ 、,纽有無増加的相對_ & ==9«與…使繼糖=確判斷 :::Γ之二險絲249之電阻值'將可滿足使= 上之而求,以及降低備料的問題。 明例^ΐ^·Γ電物電路(bandgap)僅為-說 仁八力用並不因此而侷限本發明之 二:二:本二:揭示之技藝精神下所完成之:等變 蓋之專利範, =者之功效增進,誠符合新穎性、發明性及進步性之專 =要件,麦依f提出”,盼審委早日賜准本案,以保 月人:辛古”’倘若鈞局有任何稽疑,請不吝來 函指示’發明人定當竭力配合,實感德便。 吝米 15 1325522 β^Ιι, 98-12-24 【圖式簡單說明】 圖1係為習用參考電壓產生電路之電路圖。 圖2係為習用參考電壓產生電路之電壓輸出表。 圖3A係為本發明之電路圖。 圖3B係為本發明之邏輯轉換表之示意圖。 圖4係為本發明之可程式偵測電路之示意電路圖 (一)。 圖5係為本發明之可程式偵測電路之示意電路圖 (二)。 圖6係為本發明之可程式偵測電路之示意電路圖 【主要元件符號說明】 I :電壓參考電路 II :主要電阻 12:輸出電壓 鲁 2:調整電路 21 :調整電阻 22 :電晶體開關 23 :邏輯控制器 24 :偵測電路 241 :第一反向器 242 :第二反向器 16 1325522$年十二月#曰Correct replacement page I bit. The gate of the NMOS transistor M2 is coupled to the gate of the NM〇s transistor, and the gate of the NMOS transistor M2 is coupled to the second end of the fuse 249. The PMOS transistor M5 has a pole _ NM 〇 s transistor, and the PMOS transistor source is reduced by the source of the NM 〇 s transistor M2, and the PMOS transistor M5 is coupled to the ground potential. The gate of the NMOS transistor 248 is used for receiving-adjusting the signal, as the s|g=Tnm 'NM0S transistor is torn by the flip-chip fuse, and the source of the NMOS transistor 248 is connected to the ground potential. . The input of the buffer 250 is switched to the source of the PMOS «Crystal M5, and the output of the buffer 25G is connected to the logic (4) 23 to input the (four) signal. The operation principle of the detecting unit 24 in FIG. 6 is similar to the detecting unit 24 of FIG. 5, and thus will not be described herein. Therefore, the key to the programmable detect adjuster of the present invention is: ° . (-) The present invention provides a plurality of series-connected adjustment resistors 21 for the can-hole circuit 2, and each of the adjustment resistors 21 is separately coupled to the crystal switch a, and each transistor _ 22 is connected to the logic control 23 to enable the logic circuit to receive When the calibration is on time, T or T is output according to the logic conversion table, and the relative transistor switch 22' is controlled to control the conduction of each transistor switch 22, and the main resistance u of the voltage reference circuit 可 can be adjusted by using the adjustment circuit ^ The adjustment resistor 21 is placed to finely adjust its absolute value, and the voltage output from the voltage spring circuit 1 is not lowered. (2) The present invention uses the adjustment circuit 2 to detect the presence or absence of the fuse 249, and whether the resistance 247 of the detection circuit 24 is increased or not. 14 ^ (1 98-12-24 '23' can be pressed to the logic Control 11 Μ, so that the logic control, turn '249' into the turn-on or turn-off of the body switch 22, and when the fuse 1 is directly connected, the circuit 24 is not connected to the voltage reference circuit, and the fuse 249 The current generation control circuit 1 loses its function to the voltage reference circuit 1, and the voltage is referenced to the rabbit Ueda. The invention uses the detection circuit 24 and the logic to make the device. • <Power adjustment reference circuit lm· ^铒 制 23 23' to the number of PAD χ 1 resistance 11 ugly dragon, without the need to increase to avoid taking up too much space.夕二四) The present invention uses the detection circuit 24 to inspect the debt measurement circuit 24 λ , and the presence or absence of the addition of the relative _ & == 9 « and ... to follow the sugar = indeed judged ::: Γ 二 险 249 249 The resistance value 'will satisfy the problem of making = and reducing the stock preparation. The example of the ^^^^Γ electrical circuit (bandgap) is only - said that the use of the force is not limited to the second of the present invention: two: the second: the technical spirit of the disclosure: the patent Fan, = the effect of the person is improved, Cheng is in line with the novelty, invention and progress of the special = elements, Mai Yi f proposed ", hope that the trial committee will grant the case as soon as possible, to protect the moon: Xingu" Any doubts, please do not hesitate to indicate that the inventor will try his best to cooperate with him.吝米 15 1325522 β^Ιι, 98-12-24 [Simple diagram of the diagram] Figure 1 is a circuit diagram of a conventional reference voltage generation circuit. Fig. 2 is a voltage output table of a conventional reference voltage generating circuit. Fig. 3A is a circuit diagram of the present invention. 3B is a schematic diagram of a logical conversion table of the present invention. 4 is a schematic circuit diagram (1) of the programmable detection circuit of the present invention. FIG. 5 is a schematic circuit diagram (2) of the programmable detection circuit of the present invention. 6 is a schematic circuit diagram of the programmable detection circuit of the present invention. [Main component symbol description] I: voltage reference circuit II: main resistor 12: output voltage Lu 2: adjustment circuit 21: adjustment resistor 22: transistor switch 23: Logic controller 24: detection circuit 241: first inverter 242: second inverter 16 1325522
98-12-24 243 :第三反向器 244 :第四反向器 245 :第一電晶體開關 246 :第二電晶體開關^ 247、R :電阻 248 :第三電晶體開關 249 :保險絲 A:參考電壓產生電路 A1 :主要電阻 A2 :電壓 B:微調電路 B1 :電阻 B2 :保險絲 M0〜M5 :電晶體98-12-24 243: third inverter 244: fourth inverter 245: first transistor switch 246: second transistor switch ^ 247, R: resistor 248: third transistor switch 249: fuse A : Reference voltage generation circuit A1: Main resistance A2: Voltage B: Fine adjustment circuit B1: Resistance B2: Fuses M0 to M5: Transistor
1717
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW095118337A TW200743917A (en) | 2006-05-23 | 2006-05-23 | Programmable detection adjustor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW095118337A TW200743917A (en) | 2006-05-23 | 2006-05-23 | Programmable detection adjustor |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200743917A TW200743917A (en) | 2007-12-01 |
TWI325522B true TWI325522B (en) | 2010-06-01 |
Family
ID=45074265
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095118337A TW200743917A (en) | 2006-05-23 | 2006-05-23 | Programmable detection adjustor |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW200743917A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI713409B (en) * | 2018-12-01 | 2020-12-11 | 米彩股份有限公司 | A led driving circuit |
TWI750534B (en) * | 2018-12-05 | 2021-12-21 | 美商高通公司 | Method, apparatus and circuit for generating reference voltage with trim adjustment |
-
2006
- 2006-05-23 TW TW095118337A patent/TW200743917A/en unknown
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI713409B (en) * | 2018-12-01 | 2020-12-11 | 米彩股份有限公司 | A led driving circuit |
TWI750534B (en) * | 2018-12-05 | 2021-12-21 | 美商高通公司 | Method, apparatus and circuit for generating reference voltage with trim adjustment |
Also Published As
Publication number | Publication date |
---|---|
TW200743917A (en) | 2007-12-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1637925B (en) | Semiconductor device card providing multiple working voltages | |
US7995408B2 (en) | Circuit for supplying a reference voltage in a semiconductor memory device for testing an internal voltage generator therein | |
GB2258925A (en) | Power voltage generating circuit | |
TWI325522B (en) | ||
US7126872B2 (en) | Semiconductor integrated circuit | |
US20110188334A1 (en) | Fuse circuit and semiconductor device having the same | |
US6788132B2 (en) | Voltage and time control circuits | |
US7705636B2 (en) | Buffer circuit which occupies less area in a semiconductor device | |
US7315193B2 (en) | Circuitry and method for programming an electrically programmable fuse | |
US7443227B2 (en) | Adjusting circuit | |
JP5714924B2 (en) | Voltage identification device and clock control device | |
US6970015B1 (en) | Apparatus and method for a programmable trip point in an I/O circuit using a pre-driver | |
US7276889B2 (en) | Detect/modulate circuit | |
JP2003032094A (en) | Programmable reference voltage generating circuit, and its layout method | |
TW516210B (en) | Address-generator to generate the address for an on-chip trim-circuit | |
US8564323B2 (en) | Circuit arrangement and method for testing a reset circuit | |
US7525863B2 (en) | Logic circuit setting optimization condition of semiconductor integrated circuit regardless of fuse cut | |
KR100819659B1 (en) | A reference voltage generating circuit of semiconductor memory device | |
WO2003058705A1 (en) | Evaluation circuit for an anti-fuse | |
WO1998005037A1 (en) | Semiconductor storage device | |
JP2006059429A (en) | Semiconductor memory device | |
US6850451B2 (en) | Zero static power fuse for integrated circuits | |
JP3875434B2 (en) | Semiconductor device and reference potential adjusting method thereof | |
TW541687B (en) | Semiconductor device | |
KR100924350B1 (en) | Driving Strength Control Circuit and Data Output Circuit |