1325009 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種拋光製程，特別涉及拋光製程所使用之拋光磨料及 其製造方法。 【先前技術】 目前，精密加工技術應用越來越廣泛，而拋光製程為該技術中經常利 用到的個環節，且在精密加工技術中佔據重要地位，可廣泛應用於電腦 磁頭、半導體晶片、光學玻璃器件及陶瓷等表面拋光，以獲得高精度、低 粗糙度之表面。 在許多抛光製程中，化學機械拋光(CMP，Chemical Mechanical Polishing) 應用最為普遍，相關技術發展也較為迅速。蘇建修等人在《半導體技術》， 2003 ’ V28(1G) ’ 27_32，“超大規模積體電路製造切#化學機械拋光技術 分析”一文中詳細介紹傳統化學機械拋光系統結構及原理。請參閱第一圖， 該系統主要包括一旋轉夾持器1、承載拋光墊4之工作台2以及拋光漿料9之 輸送裝置3。夾持器i包括轉轴5及與其相連接之夾持頭6,夾持頭6用於夾持 需拋光之工件7，使之處於夾持頭6與拋光墊4之間，夾持頭6面對工件7之表 八有月膜8。化學機械抛光時，旋轉夾持器1以一定壓力使工件7麼於旋 轉之拋光墊4上，而由亞微米或奈米磨粒及化學溶液組成之拋光漿料9在工 件7與拋光墊4之間流動，並產生化學反應，工件7表面形成之化學反應物由 磨粒機械作用去除，即在化學成膜及機械去膜之交替過程中實現超精密表 面加工。因而，要實現高效率、高質量拋光效果，必須使化學作用過程與 機械作用過程進行良好匹配，然而影響化學作用及機械作用之因數眾多， 5 1325009 需考慮CMP系統中各種變量，如作用於工件之拋光壓力，抛光墊與夾持器 之相對速度’拋光區域溫度，拋光液粘度、pH值，拋光墊材料，以及磨料 尺寸、濃度及硬度等性能。 一般情況下，當磨料尺寸增加時，拋光速率增加，矽片表面劃痕也增 加，但磨料尺寸過小時，易凝聚成團，仍會增加石夕片表面劃痕；當磨料硬 度增加時，拋光速率增加，也會增加矽片表面劃痕，使表面拋光質量下降。 因而，要獲得較好表面拋光質量，減少劃痕，應選擇合適的磨料尺寸及硬 度，或者利用其他性能來消除這些不足。 燒結陶瓷粒子18分散於粘接層中，能g 大，將給工件表面造成較大劃痕。另， 2002年1月8日公告之美國第6,337,281號專利揭露一種固定式研磨墊。 請參閱第二圖’該研磨墊6包括具有一前端表面9之支撑層S以及枯接於前端 表面9上之研磨拋光層1〇。研磨拋光層1〇具備立體、固定式結構，包括大量 磨料12 ’其可為切去頂端之金子塔，並具有大量凸起16、凸初6間之凹陷 I4凸起I6包3 77散純接層巾之大量好18。凸起16頂端22與半導體元 件表面相接觸，成為該研磨紙拋光^粒扣平均粒徑乘峰子最小摩 擦數！於3〇〇粒子ls包括燒結喊粒子1§，平均粒徑在似〜⑸微米範圍 内，其中至知赠岐粒子為她 '二氧切、：氧化鈽或其組合。該 專不足之處。 ’能消除粒子18之團聚現象，惟其粒徑較 °另’魏觸:級付在抗磨損性能低 2〇〇1年7月25日公開之中國大陸第_遍6號專利申 級拋光液及其製備方法。 5亥奈米級拋光液由奈米級金剛石粉 請揭露一種奈米 粉'非離子型分 6 1325009 散穩定劑、抗靜電劑、淨洗劑以及Q以下輕質白油或石腦油組成，其製備 方法為將奈米金剛石機械研磨成粉體，烘乾；加入分散穩定劑，加熱混合 使粉體潤濕；加入白油或石腦油、抗靜電劑、淨洗劑以及適量pH值調節劑， 並不斷攪拌’將混合物分散成懸浮液。其中，奈米級金剛石粉顆粒直徑為 3〜18nm。利用該奈米級拋光液所拋光之産品表面抛光質量可提高到亞奈米 量級’產品表面粗缝度為〇.l~〇.3nm。惟，奈米級金剛石粉硬度很高，容易 對產品表面造成劃痕。 有鑑於此，提供一種具有自身潤滑作用，並能避免工件拋光時產生劃痕 之拋光磨料實為必要。 【發明内容】 為克服先前技術中拋光磨料存在固態潤滑性能較低，對工件表面容易 產生劃痕等問題，本發明第一目的在於提供一種自身具有潤滑作用，並能 避免工件拋光時產生劃痕之拋光磨料，所述奈米碳球為一種由多層石墨層 以球中球結構所組成之多面體碳簇，所述奈米碳球之外層具有與多層奈米 碳管相同之石墨層結構。 本發明之第二目的在於提供上述拋光磨料之製造方法。 為實現上述第一目的，本發明提供一種拋光磨料，其包括奈米碳球、 富勒烯、鑽石顆粒以及填充材料。 其中，所述填充材料包括環氧樹脂 '硬化劑及分散劑；所述奈米碳球、 富勒稀及鑽石顆粒質量配比範圍為！ ： ： : 4: i ;所述奈米碳球、富勒 烯及鑽石驗處於均句隔離分散狀態：所述富姆包括其家族q中一種或 多種組合’優選為C5Q、C6〇、C7c>、Qo或其組合；所述拋絲料粒徑為1〇奈 7 米〜200奈米。 為實現上1«二目的’本發明提供上賴光練之製造方法，其包括 以下步驟： 製備奈米碳球及富勒烯粉末，所述奈米碳球為一種由多層石墨層以球 中球結構所組成之多面體碳摸’所述奈米碳球之外層具有與多層奈米碳管 相同之石墨層結構； 將奈米碳球、s勒烯粉末及鑽石顆粒混合於填充材料； 形成抛光磨料。 其中’所述填充材料包括環氧樹脂、硬化劑及分散劑；所述奈米碳球 及富勒稀粉末獅紐放電法製得；拋光隸採用賴麵法、物理 泰碎法或喷雜解法軸；所述奈米碳球、富娜及鑽獨粒齡後質量 配比範圍為1 : 1 : 1〜2 :4 : 1 ;所述奈米碳球、富勒烯及鑽石顆粒處於均勻 隔離分散狀態；所述ΐ勒烯包括富勒烯家族Cntf7—種或紐組合，優選為 C5〇、C6〇、C7〇、Cso或其組合；所述拋光磨料粒徑在1〇奈米〜2〇〇奈米之間。 與先前之拋光磨料相較，本發明提供之拋光磨料包括有奈米碳球與富 勒歸粉末’ _其自身固_滑性能，增加拋絲料之潤滑作用，且奈米 碳球與虽勒烯粉末為球狀奈米顆粒，可避免工件拋光時產生劃痕。 【貫施方式】 下面結合附圖對本發明作進一步詳細說明。 請參閱第三® ’為本發a月之拋光磨料20結構放大示意圖。拋光磨料20 包括奈米碳球201、富勒烯2〇2以及混合其中之鑽石顆粒2〇3，並且其間混 有填充材料204，其包括環氧樹脂、硬化劑及分散劑等。其中，拋光磨料 1325009 . C 也可為其他規則或；^規則形狀，本發明採用球狀顆粒。另， •奈米碳球201、富勒烯202以及鑽石顆粒203質量配比範圍為i : i : Μ : 4 : 1，三者椒均自_分散於魏細旨、硬化.分散解觀材料2〇4 中，且環氧樹脂、硬化劑及分散劑填充量以能使奈米碳球2tn、富勒稀202 以及鑽石顆粒203三者枯合、硬化及分散即可。奈米碳球2〇1為—種由多 層石墨層以球中球結構所組成之多面體碳鎮，其直徑為介於3〜⑽聰之 間’外層具有與多層奈米碳管相同之石墨層結構^富勒稀Μ2家族分子可 表不為Cn ’如c20、c40、c60、c70、c80、c120等。其中，c6〇具有密閉籠狀 結構，性能最為穩定，本身耐麵、爾性好，可同時滿足抗磨損及潤滑 之需炙而Cg〇 C7〇則可視為Qo結構之橫向伸展，因而本發明之富勒晞以 C5〇、Qo、Cto、Cso為佳，還可採用它們相互各種形式之組合。 本發明之拋光雜使科，通常載於—基板上形舰光面板，然後將 該抛光面板用於拋光系統中。請參閱第_，為具有本發日月之拋光磨料之 拋光系統結構示意圖。拋光系統10包括一可旋轉昇降壓盤u ; 一緊貼壓盤 11底面之拋光面板12 ; —運轉研磨盤13，其上形成有至少一用於固持工件 15之拋光墊14，該工件15位於拋光面板12與拋光墊14之間；一去離子 水線16及一拋光漿料線17 ; —控制裝置18，用於控制去離子水線16與拋 光聚料線17之流量及流速，同時還可控制壓盤η之轉速、昇降及施加於 拋光面板12之壓力等。運轉研磨盤13上可預設多個用於固持工件15之拋 光墊14，通過運轉研磨盤13之運轉，能埠續拋光多個工件15。拋光墊14 之材質可選自聚胺基甲酸醋、聚亞安_等。拋光装料可採用奈米碳球、富 9 1325009 勒烯以及奈米氧化物之混合物，奈米氧化物可選自奈米級Ce〇2、、別〇2 或其組合，優選為奈米Ce〇2。該拋光漿料在整個拋光製程中起化學作用， 拋光漿料採用奈米級混合物，可促進其對工件15之化學作用。 請參見第五圖，拋光面板12包括一金屬基板19以及形成於其表面之 拋光磨料20。其中，拋光磨料20均勻分佈於基板19上與拋光墊14相對之 表面’如可她向均勻分佈於基板N表面(如圖中虛線所示抛光磨料 粒徑在10奈米〜200奈米範圍内。 請參閱第六圖，為本發明之拋光磨料製造方法流程圖，其包括以下步 驟： 、 ⑴製備奈米碳球及富勒粉末。採用電弧放電法製備奈米碳球及富勒 烯’通常以石墨棒為碳源，在惰性氣體氛圍下，舰衝電流施加電壓於陰 極與陽極之間，藉以產生電51放電反應，收集石墨陰極之沈積物，可獲得 奈米碳球及富㈣’其巾，奈米碳雜徑介於W⑻nm之間，而富勒締八 子分散於奈米碳球中。 (2) 將奈米碳球、富勒稀粉末及鑽石顆粒混合於填充材料中。取經步驟 ⑴製備之奈米碳球及富勒烤粉末，於其中先均句混合鑽叾，使三者質量配 比介於1:1: im之間；然後將其與填充材料相混合，該填充材料包 括環氧概、硬化做分其可使Μ雜、富料與歡混合後處 於相互隔齡餘態，還可_超聲波震妓法以增加分散效果。 (3) 形成抛光磨料。將上航合物製成奈纽，該触可為球狀， 也可為其他規則或;f規細彡狀，如採職械球磨法、物理粉碎法或喷霧熱 1325009 解法。 通過上述步驟，即可獲得奈米級拋光磨料。 在該抛光系統10中’由於控制裝置18可控制拋光面板12作用於工件 15之拋光壓力，其對拋光速率及拋光表面質量影響較大。因而，通過控制 拋光面板12作用壓力，可調節對工件15之拋光速率，以獲得較佳表面質 量。同時控制裝置18還可控制拋光面板12之轉速，調節拋光面板12與運 轉研磨盤13之相對速度。同等條件下，該相對速度增加，會引起拋光速率 增加，對工件15表面之機械作用也會增大。因而，通過控制壓盤u之轉 速’可調節工件15表面拋光粗糙度。 本發明之拋光磨料20在拋光系統中起機械作用，利用奈米級奈米 碳球及富勒触末之m態輯性能，提高拋光雜之爾侧，避免工件 15拋光時產生劃痕。再利用鑽石顆粒來增加拋光磨料如之切削強度，以增 加拋光材料去除率，而且鑽石馳粒徑小，使工件15 _深度減小。另， 通過控繼置18馳光面板12作職力、之_，可瓣拋光過程 中機械作用’從喊得雛拋光效果，提紅件表面15拋光質量，最終可 獲得亞奈米級超光滑表面。如對賴製品抛光時，其表面祕度r可達 0.1 〜0.8nm。 綜上所述，本發明符合發明專利之要件，表依法提出專利申請。惟， 以上所述者僅為本發明讀佳實施例，自不能以此_本案之巾請專利範 圍。舉凡熟悉核補之人士，錢依本紐赌神所作之纽修飾或變 化，皆應包含於以下之申請專利範圍内。 【圖式簡單說明】 11 1325009 第一圖係傳統化學機械拋光系統結構示意圖。 第二圖係先前技術之研磨墊結構示意圖。 第三圖係本發明之拋光磨料結構放大示意圖。 第四圖係具有本發明之拋光磨料之拋光系統結構示意圖。 第五圖係具有本發明之拋光磨料之拋光面板結構示意圖。 第六圖係本發明之拋光磨料製造方法流程圖。 【主要元件符號說明】 系統 10 壓盤 11 拋光面板 12 運轉研磨盤 13 拋光墊 14 工件 15 去離子水線 16 拋光漿料線 17 控制裝置 18 基板 19 拋光磨料 20 奈米碳球 201 富勒烯 202 鑽石顆粒 203 填充材料 204 121325009 IX. Description of the Invention: TECHNICAL FIELD OF THE INVENTION The present invention relates to a polishing process, and more particularly to a polishing abrasive used in a polishing process and a method of manufacturing the same. [Prior Art] At present, precision machining technology is more and more widely used, and the polishing process is a frequently used part of the technology, and plays an important role in precision machining technology. It can be widely used in computer heads, semiconductor wafers, and opticals. Surface polishing of glass devices and ceramics to achieve high precision, low roughness surfaces. In many polishing processes, chemical mechanical polishing (CMP) is the most common application, and related technologies are developing rapidly. Su Jianxiu and others in the "Semiconductor Technology", 2003 'V28 (1G) '27_32, "Ultra-large-scale integrated circuit manufacturing cut #chemical mechanical polishing technology analysis" article details the structure and principle of traditional chemical mechanical polishing system. Referring to the first figure, the system mainly comprises a rotary holder 1, a table 2 carrying a polishing pad 4, and a conveying device 3 for polishing the slurry 9. The holder i includes a rotating shaft 5 and a clamping head 6 connected thereto, and the clamping head 6 is used for holding the workpiece 7 to be polished so as to be between the clamping head 6 and the polishing pad 4, and the clamping head 6 The surface of the workpiece 7 has a lunar membrane 8. In the chemical mechanical polishing, the rotary holder 1 presses the workpiece 7 on the polishing pad 4 with a certain pressure, and the polishing slurry 9 composed of the submicron or nano abrasive grains and the chemical solution is on the workpiece 7 and the polishing pad 4. Flowing between and generating a chemical reaction, the chemical reactant formed on the surface of the workpiece 7 is removed by mechanical action of the abrasive grains, that is, ultra-precision surface processing is realized in the process of alternating chemical film formation and mechanical film removal. Therefore, in order to achieve high efficiency and high quality polishing effect, the chemical action process must be well matched with the mechanical action process. However, there are many factors affecting the chemical action and the mechanical action. 5 1325009 It is necessary to consider various variables in the CMP system, such as acting on the workpiece. Polishing pressure, relative speed of the polishing pad to the holder ' polishing zone temperature, slurry viscosity, pH, pad material, and abrasive size, concentration and hardness. Under normal circumstances, when the size of the abrasive increases, the polishing rate increases, and the scratches on the surface of the cymbal sheet also increase. However, if the abrasive size is too small, it tends to agglomerate into a mass, which will still increase the surface scratch of the stone slab; when the hardness of the abrasive increases, the polishing Increasing the rate also increases the scratch on the surface of the bract and reduces the quality of the surface finish. Therefore, to obtain better surface finish quality and reduce scratches, choose the appropriate abrasive size and hardness, or use other properties to eliminate these deficiencies. The sintered ceramic particles 18 are dispersed in the adhesive layer, and can be large in size, causing a large scratch on the surface of the workpiece. A fixed polishing pad is disclosed in U.S. Patent No. 6,337,281, issued Jan. 8, 2002. Referring to the second drawing, the polishing pad 6 includes a support layer S having a front end surface 9 and an abrasive polishing layer 1b that is adhered to the front end surface 9. The polishing and polishing layer 1〇 has a three-dimensional, fixed structure, including a large amount of abrasive 12', which can be a gold tower with a top end cut away, and has a large number of protrusions 16, a concave portion of the first 6 spaces, and an I6 protrusion. The number of layers of towels is good. The top end 22 of the bump 16 is in contact with the surface of the semiconductor element, and becomes the average particle size of the polished paper grain and the minimum number of rubs of the peak! The 3 〇〇 particle ls includes sintered squeezing particles 1 §, and the average particle diameter is in the range of ~(5) micrometers, wherein the granules are known as 'dioxotomy, yttrium oxide or a combination thereof. This special deficiency. 'Can eliminate the agglomeration phenomenon of the particles 18, but its particle size is better than the other 'Wei touch: the grade is paid in the anti-wear performance is low. 2〇〇1 July 25th, the mainland China No. 6 patent grade polishing liquid and Its preparation method. 5 Heinami grade polishing liquid from nano-grade diamond powder, please disclose a kind of nano-powder 'non-ionic type 6 1325009 powder stabilizer, antistatic agent, detergent and Q white light white oil or naphtha composition, its preparation The method comprises the following steps: mechanically grinding the nano diamond into a powder, drying; adding a dispersion stabilizer, heating and mixing to wet the powder; adding white oil or naphtha, an antistatic agent, a detergent, and an appropriate pH adjusting agent, And constantly stirring 'dispersion of the mixture into a suspension. Among them, the nano-sized diamond powder particles have a diameter of 3 to 18 nm. The surface polishing quality of the product polished by the nano-grade polishing liquid can be increased to the level of the nanometer's product, and the surface roughness is 〇.l~〇.3nm. However, nano-grade diamond powder is very hard and easily scratches the surface of the product. In view of this, it is necessary to provide a polishing abrasive which has self-lubricating action and can avoid scratches when the workpiece is polished. SUMMARY OF THE INVENTION In order to overcome the problems that the prior art polishing abrasive has low solid lubricating property and scratches on the surface of the workpiece, the first object of the present invention is to provide a lubricating effect and avoid scratches during polishing of the workpiece. A polishing abrasive, the nanocarbon sphere is a polyhedral carbon cluster composed of a plurality of graphite layers in a spherical ball structure, the outer layer of the nanocarbon sphere having the same graphite layer structure as the multilayer carbon nanotube. A second object of the present invention is to provide a method of producing the above-described polishing abrasive. To achieve the above first object, the present invention provides a polishing abrasive comprising nanocarbon spheres, fullerenes, diamond particles, and a filler material. Wherein, the filling material comprises an epoxy resin 'hardener and a dispersing agent; the nano carbon sphere, the fullerene and the diamond particles have a mass ratio range of! : : : 4 : i ; The nanocarbon spheres, fullerenes and diamonds are in a state of isolation and dispersion: the fulva includes one or more combinations of its family q 'preferably C5Q, C6 〇, C7c>; , Qo or a combination thereof; the throwing material has a particle size of from 1 nanometer to 200 nanometers. In order to achieve the above 1 "two purposes", the present invention provides a manufacturing method for the glazing, which comprises the steps of: preparing a nanocarbon sphere and a fullerene powder, wherein the nanocarbon sphere is a spherical structure composed of a plurality of layers of graphite The polyhedral carbon touch is composed of the outer layer of the carbon carbon sphere having the same graphite layer structure as the multilayer carbon nanotube; the nano carbon sphere, the selemann powder and the diamond particles are mixed in the filling material; and the polishing abrasive is formed. Wherein the filling material comprises an epoxy resin, a hardener and a dispersing agent; the nano carbon sphere and the fuller powder powder lion New Zealand discharge method; the polishing is performed by a laminating method, a physical Thai method or a spray disintegration method. The mass ratio of the nano carbon sphere, the Fu Na and the drilled single age is 1: 1: 1 to 2: 4: 1; the nano carbon sphere, fullerene and diamond particles are uniformly separated and dispersed a state in which the fullerene includes a fullerene family Cntf7-type or a combination of gold, preferably C5〇, C6〇, C7〇, Cso or a combination thereof; the polishing abrasive has a particle size of 1〇 nanometer~2〇〇 Between the rice. Compared with the prior polishing abrasives, the polishing abrasive provided by the present invention comprises a nano carbon ball and a fuller powder, which has its own solid-slip property, increases the lubricating effect of the throwing material, and the nano carbon ball and the The olefin powder is spherical nano granules, which can avoid scratches when the workpiece is polished. [Complex Mode] The present invention will be further described in detail below with reference to the accompanying drawings. Please refer to the third ® 'enlarged schematic diagram of the polishing abrasive 20 structure for this month. The polishing abrasive 20 includes a nanocarbon sphere 201, a fullerene 2〇2, and a diamond particle 2〇3 mixed therein, and a filler material 204 mixed therein, which includes an epoxy resin, a hardener, a dispersant, and the like. Among them, the polishing abrasive 1325009. C can also be other rules or; regular shape, the present invention uses spherical particles. In addition, the mass ratio of nanocarbon sphere 201, fullerene 202 and diamond particles 203 is i : i : Μ : 4 : 1, the three peppers are all dispersed from the finest, hardened and dispersed. In 2〇4, the filling amount of the epoxy resin, the hardener, and the dispersant may be such that the carbon nanotubes 2tn, the fullerene 202, and the diamond particles 203 are dried, hardened, and dispersed. The nanocarbon sphere 2〇1 is a polyhedral carbon town composed of a multi-layered graphite layer and a spherical structure in a sphere, and its diameter is between 3 and (10) Cong'. The outer layer has the same graphite layer as the multi-layered carbon nanotube. The structure of the ^Fuller dilute 2 family of molecules can be expressed as Cn 'such as c20, c40, c60, c70, c80, c120 and the like. Among them, c6〇 has a closed cage structure, the performance is the most stable, its surface resistance and goodness are good, it can meet the requirements of anti-wear and lubrication at the same time, and Cg〇C7〇 can be regarded as the lateral extension of Qo structure, so the invention Fuller's choice is C5〇, Qo, Cto, Cso, and they can also be combined with each other in various forms. The polishing messenger of the present invention is typically mounted on a substrate-shaped light panel and then used in a polishing system. Please refer to the _, which is a schematic diagram of the polishing system with the polishing abrasive of this date. The polishing system 10 includes a rotatable lifting platen u; a polishing panel 12 that abuts against the bottom surface of the platen 11; a running grinding disk 13 on which is formed at least one polishing pad 14 for holding the workpiece 15, the workpiece 15 being located Between the polishing panel 12 and the polishing pad 14; a deionized water line 16 and a polishing slurry line 17; a control device 18 for controlling the flow rate and flow rate of the deionized water line 16 and the polishing polymerization line 17, and The rotation speed of the platen η, the lifting and the pressure applied to the polishing panel 12, and the like can be controlled. A plurality of polishing pads 14 for holding the workpiece 15 can be preset on the running grinding disc 13, and the plurality of workpieces 15 can be successively polished by the operation of the grinding disc 13. The material of the polishing pad 14 may be selected from the group consisting of polyurethane urethane, poly Asiaan, and the like. The polishing charge may be a mixture of nano carbon spheres, 9 1325009 olefins and nano oxides, and the nano oxide may be selected from nano-scale Ce 〇 2, 〇 2 or a combination thereof, preferably nano Ce 〇 2. The polishing slurry chemically acts throughout the polishing process, and the polishing slurry utilizes a nanoscale mixture to promote its chemical action on the workpiece 15. Referring to the fifth drawing, the polishing panel 12 includes a metal substrate 19 and a polishing abrasive 20 formed on the surface thereof. Wherein, the polishing abrasive 20 is evenly distributed on the surface of the substrate 19 opposite to the polishing pad 14 as it can be evenly distributed on the surface of the substrate N (the polishing abrasive particle size shown in the dotted line is in the range of 10 nm to 200 nm) Please refer to the sixth figure, which is a flow chart of a method for manufacturing a polishing abrasive according to the present invention, which comprises the following steps: (1) preparing a nanocarbon sphere and a fuller powder. The preparation of nano carbon spheres and fullerenes by arc discharge method is generally The graphite rod is used as the carbon source. Under the inert gas atmosphere, the ship current is applied between the cathode and the anode to generate an electric 51 discharge reaction, and the graphite cathode deposit is collected to obtain a nano carbon sphere and a rich (four) Towel, the nano carbon path is between W (8) nm, and the fuller is dispersed in the nano carbon sphere. (2) The nano carbon sphere, the fuller powder and the diamond particles are mixed in the filling material. (1) The prepared nano carbon sphere and the fuller roasted powder, wherein the drill collar is mixed firstly, so that the mass ratio of the three is between 1:1: im; and then mixed with the filling material, the filling material Including epoxy, hardening, and After mixing the noisy, rich and mixed, it is in a state of separation from each other, and it can also be used to increase the dispersion effect. (3) Form a polishing abrasive. Shape, can also be other rules or; fine rules, such as mining machine ball milling, physical pulverization or spray heat 1315009 solution. Through the above steps, you can get nano-grade polishing abrasive. Since the control device 18 can control the polishing pressure of the polishing panel 12 acting on the workpiece 15, it has a great influence on the polishing rate and the polishing surface quality. Therefore, by controlling the pressure applied to the polishing panel 12, the polishing rate of the workpiece 15 can be adjusted. To obtain a better surface quality, the control device 18 can also control the rotation speed of the polishing panel 12 to adjust the relative speed of the polishing panel 12 and the running grinding disc 13. Under the same conditions, the relative speed increases, which causes the polishing rate to increase, and the workpiece is increased. The mechanical action of the surface of 15 will also increase. Thus, the surface finish roughness of the workpiece 15 can be adjusted by controlling the rotational speed of the platen u. The polishing abrasive 20 of the present invention is in a polishing system. Mechanical action, using the nano-scale carbon spheres and the full-scale characteristics of the full-scale nano-sole, improve the polishing side, avoid scratches when the workpiece 15 is polished. Re-use the diamond particles to increase the polishing strength of the polishing abrasive. In order to increase the polishing material removal rate, and the diamond gallop size is small, the workpiece 15 _ depth is reduced. In addition, by controlling the relay 18 the light panel 12 as a job force, the mechanical action in the petal polishing process Shouting the polishing effect of the younger, the surface of the red-finished part is polished to a final quality, and finally the ultra-smooth surface of the sub-nanometer grade can be obtained. For polishing the product, the surface refinement r can reach 0.1 to 0.8 nm. The invention meets the requirements of the invention patent, and the patent application is filed according to law. However, the above is only a preferred embodiment of the present invention, and it is not possible to request the scope of the patent. Anyone who is familiar with the supplement, the modification or change of the money made by the money gambling gambling should be included in the scope of the following patent application. [Simple description of the diagram] 11 1325009 The first diagram is a schematic diagram of the structure of a conventional chemical mechanical polishing system. The second figure is a schematic view of the prior art polishing pad structure. The third figure is an enlarged schematic view of the polishing abrasive structure of the present invention. The fourth figure is a schematic structural view of a polishing system having the polishing abrasive of the present invention. The fifth figure is a schematic view of the structure of a polished panel having the polishing abrasive of the present invention. Figure 6 is a flow chart showing the method of manufacturing the polishing abrasive of the present invention. [Main component symbol description] System 10 Platen 11 Polishing panel 12 Running grinding disc 13 Polishing pad 14 Workpiece 15 Deionized water line 16 Polishing paste line 17 Control device 18 Substrate 19 Polished abrasive 20 Nano carbon sphere 201 Fullerene 202 Diamond Particles 203 Filling Material 204 12