13229961322996
九、發明說明： 【發明所屬之技術領域】 發職-嫩侧贼備，嫩及—種軸子輔麵之 【先前技#ί】 傳統真空鍍膜設備係於真空條件下用電子魏子束將膜料加轨 溫度，使其蒸發並沈積於級上形成薄膜以達到鍍膜之目的。惟，被姆膜 之能量低，所舰層之_力差、密度低，舰之，峨魏影響大: f脫洛、=穩定。此外’電子蒸發時，電子搶德極電壓為6〇〇〇1〇〇断， 谷易引起咼壓放電打火，影響薄膜之質量。 為增加真空舰之附著力、密度並改善其物理性質，於電子束轉過程 中需使用離子源對紐進行轟擊，實現離子輔助繼之目的。離 ，長之膜原子撞擊可使薄膜之光譜特性特別穩定、吸水性減少、折射率升 尚及她餅低’這是因為離子助鍍後膜堆積密度昇高膜變得更致密 此吸水量變少，光譜特性也因此不會飄移，折射率變大且穩定。Nine, invention description: [Technical field of invention] Served - tender thief preparation, tender and - axe auxiliary surface [previous technology #ί] Traditional vacuum coating equipment is used under vacuum conditions with electrons The temperature is applied, evaporated and deposited on the stage to form a film to achieve the purpose of coating. However, the energy of the membrane is low, the strength of the ship's layer is poor, the density is low, and the ship's influence is greatly affected: f is detached, and = is stable. In addition, when electrons evaporate, the voltage of the electrons is 6 〇〇〇 1 ,, and Gu Yi causes the smashing discharge to ignite, which affects the quality of the film. In order to increase the adhesion and density of the vacuum ship and improve its physical properties, it is necessary to use an ion source to bombard the New Zealand during the electron beam transfer process to achieve the purpose of ion assisted. The long film atomic impact can make the spectral characteristics of the film particularly stable, the water absorption is reduced, the refractive index is increased, and her cake is low. This is because the film bulk density increases after ion assist plating, and the film becomes denser. Therefore, the spectral characteristics do not drift, and the refractive index becomes large and stable.
Harold R_ Kaufman於1989年8月29日公告之美^利第4,卿，〇32 號f先揭露-種用於無柵極離子助鑛之離子源即端霍爾離子源㈣侧 Ion Source)，此類離子源現在仍普遍使用，其主要技術内容如下： 如第-圖所示’端霍爾離子源20由發射電子之陰極22、接收電 射離子之陽極25、磁路26及供氣系統(未標示)城，該陰極22包括—降極 燈絲221及兩陶兗絕緣塾224及226。磁路26於放電室&内形成磁場^磁 力線，陰極22下部之磁極發出織電室進入頂部磁極π。離子源工作時， 工作氣體(氬氣)和聽氣體(如氧氣)由供氣管道21進入到放電室24内。與 此同時’陰極燈絲221 熱至熱電子發射溫度，.25被施以正電位。 在電场之作訂’陰極燈絲221發射之部分電子沿磁力線以螺旋運動之方式 向，極25遷移，在放電室内與氣體原子或分子發生職，麵其電離。ς 電離過程中產生之電子繼續向陽極25遷移，產生之離子將在放電室24電場 之^用下被加速並與陰極燈絲221產生之部分電子中和之後形成等離子體射 出離子源20 ’具有-定能量之等離子體對紐進行直接爲擊進行錐前清洗， 5Harold R_ Kaufman announced on August 29, 1989, the United States ^ Li 4th, Qing, 〇 32, f first revealed - an ion source for the gateless ion-assisted ore source, the end Hall ion source (four) side Ion Source), Such ion sources are still commonly used now, and their main technical contents are as follows: As shown in the figure - the end Hall ion source 20 is composed of a cathode 22 for emitting electrons, an anode 25 for receiving an ion, a magnetic circuit 26, and a gas supply system. (not shown), the cathode 22 includes a descending filament 221 and two ceramic insulating 224 and 226. The magnetic circuit 26 forms a magnetic field in the discharge chamber & the magnetic pole in the lower portion of the cathode 22 emits the woven chamber into the top magnetic pole π. When the ion source is operated, the working gas (argon gas) and the listening gas (such as oxygen) enter the discharge chamber 24 from the gas supply pipe 21. At the same time, the cathode filament 221 is heated to the hot electron emission temperature, and .25 is applied with a positive potential. In the electric field, part of the electrons emitted by the cathode filament 221 are moved in a spiral motion along the magnetic lines of force, and the pole 25 migrates, and the gas atoms or molecules are generated in the discharge chamber to be ionized.电子 The electrons generated during the ionization process continue to migrate to the anode 25, and the generated ions will be accelerated by the electric field of the discharge cell 24 and neutralized with a portion of the electrons generated by the cathode filament 221 to form a plasma exit ion source 20'- The plasma of constant energy is directly applied to the front of the cone for pre-cone cleaning, 5
或轟擊薄膜表面與薄膜表面原子進行能量交換進行離子輔助錢膜β 1322996 1993年3月10日公告之中國大陸專利第97228290.4號揭露一種用於大 面積輔助鍍膜之離子源，其包含有放電室、陽極 '陰極發射體、陰極磁極鞋、 磁屏及陽極磁極靴。其陰極發射體為杯狀硼化鑭，其被加熱到溫度l5〇『c以 上才能發射電子。 2002年11月20日公開之中國大陸專利申請第〇2116688.9號揭露一種 端霍爾離子源，其由陰極燈絲、陽極、供氣系統磁路等部件組成，其中，該 陰極燈絲為鎢絲。 八 惟’上述離子源之用於提供電子之陰極皆採用連接於高電壓以絲或棚 化鋼，該鎢絲或硼化爛在高電壓下受激發才能發出電子。採用鶴絲或棚化鋼 之陰極具有兩個缺點：（1)需提供較高工作電壓：若放電室内之反應氣體為 氧氣，則絲兩端電壓約為謂；若放電室内之M氣體為氫氣；鶴絲兩 端電壓約為15GV ;⑵f轉越陰極：麟在使舰程巾其赶電子之效 率隨著使用時間越長而降低，且其使用時間不超過六小時。 故’提供-種具有較低功，且練時f更換陰極之軒源實為必 要。 【發明内容】 本發明之目的在於提供-種具有較低硝，且無鱗常更換陰極之 離子源。 、 為實現本發明目的，本發明提供一種離子源，其包括： 一放電室； 一^2@，路環繞該放電室； 一供氣純，該供氣械與槪電室相連通，向該放電室提供工 氣體及反應氣體，所述工作驗為氬氣，所狀槪體為氧氣； 一陽極，設置於該放電室之下方； -陰極’設置於該放電室之上方，與上述陽極相對應； ，中’該陰極為複數場魏冷陰極，其發射端對準該放電室。 遠場發射冷陰極挪奈米碳管場發射端、 種薄膜場發射端。 6 9畢1知4修正替換頁 與先前技術相較’本發明之離子源採用複數場發射冷陰極作為用於提供 電子之陰極。場發射冷陰極之工作電壓較低，如，採用奈米碳管之場發射陰 極之工作電壓大約在2〇v左右，遠低於採用鎢絲或硼化鋼之工作電壓，故其 具有低能耗之優點’而且奈米碳管場發射裝置具有使用壽命長、體積小之優 點。綜上’採用奈米碳管場發射裝置作為陰極之離子源具有低能耗，且無須 時常更換陰極之優點。 【實施方式】 下面將結合附圖及實施例對本發明作進一步之詳細說明。 請參閱第二圖’本發明之第一實施例之離子源3〇，其包括：一放電室 34 ^磁路36 ’該磁路36環繞該放電室34 ; 一供氣系統(未標示）；一陽極 35 ’设置於該放電室34之下方；複數場發射冷陰極32，設置於該放電室34 之上方，與上述陽極35相對應。 、本發明之磁路36為環繞該離子源3〇而設，其一般由背磁極(未標示）、 2體(未標示)、外磁體(未標示)及頂部磁體364組成。該磁路部之背磁極(未 二）、磁體(未標不）、外磁體(未標示)及頂部磁體删於放電室34内形 磁場(如第二圖所示）。 322 極f包括一場發射端322及一用於支撑該場發射端 Ξ ί 絕緣支樓臂324分別固定於磁路36之頂部磁體 ：3；~ ° 侧二紐 域賴魏3221表面之絲碳管陣列 Γ工ϊίΐ 3f與絕緣侧324相連接，該基底3221外接電源用於^ 其中，該複數絕緣靖324之形狀在n 之奈未碳官陣列3223對準放電室34之要求下可任意 旖射鳊322 該陽極35為圓柱體結構， 相對應於該場發射冷陰極32。該陽^^置開設有一錐形結構之凹槽， 之圓形坩堝·該陽極35之下部凹槽底部構造出可裝載膜料 標示)與饰氣謂相連接。佈氣板312 ’該陽極35通過螺拴(未 統。 啊板312上財-供氣管道313，組成供氣系 ’工作氣體及反應氣體分別由— 本發明之離子源30於真空環境作業時 ^1ΓΤ3~-1 年月日修正替換頁 供氣管道313導入到放電室34内，工作氣體選用氬氣，域氣體選用氧氣。 磁力線由場魏冷陰極⑽T狀磁㈣翻私頂部雜脱。與此 與該場發射端微外接之電源提供場發射端姐—負電位，提爾極35 _ 正電位，奈米碳管陣列3223受激發發射出電子。在放電室之電場作用下， 從奈米碳管陣列發出之部分電子沿磁力線方向向陽極35遷移，在放電室^ 内與氣體原子或分子發生職，並將其。於鱗過财產奴電子繼續 1陽極35遷移，產生之離子將在放電室34電場之作用下柳速，與場發射 端322產生之部分電子中和之後，形成等離子體從離子助鑛器3〇射出。且 有-定能量之等離子體束對紐(未標示)進行直接絲進機前清洗，或爲 辜翻·薄膜表面與薄膜表面原子進行能量交換進行離子輔助舰。 請參閱第三圖，本發明之第二實施例之離子源4〇，其包括：一放電室 44 ; -磁路(未標示），該磁路環繞該放電室44 ; 一陽極45設置於放電室44 下方％數場發射冷陰極42設置於放電室44上方;及—供氣級(未標示）。 該磁路包括f磁極他、磁體462 '外磁極棚及頂部磁極俯，可於放 電室44内形成一磁場。 ' 斤該陽極45设有裝載膜料之坩堝451，該陽極45通過螺栓48與下方之佈 氣板49連接。該佈氣板49上設有環型饰氣槽5〇，在環型佈氣槽⑽頂部有 沿圓周均勻分佈之供氣孔51。於環型佈氣槽5〇向下連接一供氣管道沿。上 述佈，板49 環型佈氣槽50、供氣孔51及供氣管道52構成該供氣系統。 工作氣體(如氬氣)和錢氣體(如氧氣)由該供氣管道52進入環型佈氣槽5〇 内，然後由供氣孔51沿圖中所示方向向放電室内供氣。 另，該陽極45及掛禍451底部一般還設有水冷祕(未標示），以避免 坩堝451及其他工件於高溫下雜毀。該水冷系統包括一設於該陽極及 獅451底部从冷室47，一設於環形佈氣槽5〇下方之冷卻水進水口 53 及出水口 54。冷卻水由進水口 53進入到水冷室47，經擔環與陽極45熱交 驗由出水口 54流出’以保證坩禍451被充分冷卻，避免甜禍451及其他 部件被燒毀。 ”軸場發射冷陰極42包括—場發射端422及一用於支撑該場發射端似 之％緣支標臂424 ’複數絕緣支撐臂424固定於頂部磁極。本實施為採Or bombarding the surface of the film to exchange energy with the surface of the film for ion-assisted money film. The gas source is disclosed in Chinese Patent No. 97228290.4, published on March 10, 1993, which discloses an ion source for large-area auxiliary coating, which comprises a discharge chamber. Anode 'cathode emitter, cathode pole shoe, magnetic screen and anode magnetic pole piece. The cathode emitter is cup-shaped lanthanum boride, which is heated to a temperature of 15 〇 c above to emit electrons. The Chinese Patent Application No. 211,668,8.9, issued on Nov. 20, 2002, discloses a terminal Hall ion source which is composed of a cathode filament, an anode, a magnetic circuit of a gas supply system, and the like, wherein the cathode filament is a tungsten wire. 8. The cathode used to supply electrons of the above ion source is connected to a high voltage wire or shed steel, which is excited at a high voltage to emit electrons. The cathode using the crane wire or the shed steel has two disadvantages: (1) It is required to provide a higher working voltage: if the reaction gas in the discharge chamber is oxygen, the voltage at both ends of the wire is about; if the M gas in the discharge chamber is hydrogen The voltage at both ends of the crane wire is about 15GV; (2) f turns over the cathode: Lin makes the efficiency of the ship's electronic rushing electrons decrease with the use of time, and its use time does not exceed six hours. Therefore, it is necessary to provide a kind of low-power, and to change the cathode at the time of training. SUMMARY OF THE INVENTION It is an object of the present invention to provide an ion source having a lower nitrate and a scale-free replacement of the cathode. In order to achieve the object of the present invention, the present invention provides an ion source comprising: a discharge chamber; a ^2@, the circuit surrounds the discharge chamber; a gas supply is pure, the gas supply is connected to the electric chamber, The discharge chamber supplies a working gas and a reaction gas, the work is argon, and the body is oxygen; an anode is disposed below the discharge chamber; and a cathode is disposed above the discharge chamber and is opposite to the anode Corresponding; , the 'the cathode is a complex field of Wei cold cathode, the emitting end of which is aligned with the discharge chamber. The far field emits the cold cathode Nautical carbon nanotube field emission end and the seed film field emission end. 6 9 1 4 Correction Replacement Page Compared with the prior art, the ion source of the present invention employs a complex field emission cold cathode as a cathode for supplying electrons. The operating voltage of the cold cathode of the field emission is relatively low. For example, the operating voltage of the field emission cathode using the carbon nanotube is about 2 〇v, which is much lower than the working voltage of the tungsten wire or the boronized steel, so it has low energy consumption. The advantages of 'and the carbon nanotube field emission device have the advantages of long service life and small size. In summary, the use of a carbon nanotube field emission device as the ion source of the cathode has low energy consumption and does not require frequent replacement of the cathode. [Embodiment] Hereinafter, the present invention will be further described in detail with reference to the accompanying drawings and embodiments. Referring to the second figure, the ion source 3 of the first embodiment of the present invention includes: a discharge chamber 34 ^ magnetic circuit 36 '. The magnetic circuit 36 surrounds the discharge chamber 34; a gas supply system (not shown); An anode 35' is disposed below the discharge chamber 34; a plurality of field emission cold cathodes 32 are disposed above the discharge chamber 34 to correspond to the anode 35. The magnetic circuit 36 of the present invention is disposed around the ion source 3', and is generally composed of a back magnetic pole (not labeled), a 2-body (not labeled), an outer magnet (not labeled), and a top magnet 364. The magnetic poles of the magnetic circuit portion (not shown), the magnets (not labeled), the outer magnets (not shown), and the top magnet are deleted from the magnetic field in the discharge chamber 34 (as shown in the second figure). The 322 pole f includes a launching end 322 and a support for the field transmitting end Ξ ί. The insulating branch arm 324 is respectively fixed to the top magnet of the magnetic circuit 36: 3; ~ ° side two-new field Lai Wei 3221 surface carbon carbon tube The array is connected to the insulating side 324. The substrate 3221 is externally connected to the power supply. The shape of the plurality of insulating 324 can be arbitrarily transmitted under the requirement of the N-carbon array 3223 aligned with the discharge chamber 34. 322 The anode 35 has a cylindrical structure corresponding to the field emission cold cathode 32. The anode is provided with a recess of a tapered structure, and the circular 坩埚 · the bottom of the recess of the anode 35 is formed with a loadable film material to be connected with the garnish. The gas plate 312 'the anode 35 passes through the screw (not integrated. The plate 312 on the gas supply pipe 313, constitutes the gas supply system 'the working gas and the reaction gas are respectively - the ion source 30 of the present invention is operated in a vacuum environment ^1ΓΤ3~-1 year-and-month correction replacement page gas supply pipe 313 is introduced into the discharge chamber 34, the working gas is selected from argon gas, and the domain gas is selected from oxygen. The magnetic field line is replaced by the field Wei cold cathode (10) T-shaped magnetic (four). The power supply that is micro-external to the transmitting end of the field provides a field emission terminal-negative potential, a Tier pole 35 _ positive potential, and a carbon nanotube array 3223 is excited to emit electrons. Under the electric field of the discharge chamber, from the nanometer. A part of the electrons emitted by the carbon tube array migrates toward the anode 35 along the direction of the magnetic field line, and a gas atom or a molecule is generated in the discharge chamber, and the element is transferred to the anode and the electrons to continue the migration of the anode 35, and the generated ions will be After the electric field of the discharge chamber 34 is applied, the velocity of the column is neutralized with a portion of the electrons generated by the field emission terminal 322, and a plasma is formed from the ion trainer 3, and the plasma beam with a constant energy is applied to the neon (not labeled). Direct wire feeder Pre-cleaning, or ion-assisted ship for energy exchange between the surface of the film and the surface of the film. Referring to the third figure, the ion source 4 of the second embodiment of the present invention comprises: a discharge chamber 44; a magnetic circuit (not shown) surrounding the discharge chamber 44; an anode 45 disposed below the discharge chamber 44; and a plurality of field emission cold cathodes 42 disposed above the discharge chamber 44; and - a gas supply stage (not shown). The magnetic circuit includes an f magnetic pole, a magnet 462' outer magnetic pole and a top magnetic pole, and a magnetic field can be formed in the discharge chamber 44. The anode 45 is provided with a crucible 451 for loading the film, and the anode 45 passes through the bolt 48 and below. The air distribution plate 49 is connected. The air distribution plate 49 is provided with a ring-shaped air groove 5, and a gas supply hole 51 is uniformly distributed on the top of the annular air distribution groove (10). Connected to a gas supply pipe. The cloth, the plate 49 annular air groove 50, the air supply hole 51 and the air supply pipe 52 constitute the gas supply system. The working gas (such as argon) and the money gas (such as oxygen) are The air supply duct 52 enters the annular air duct 5〇, and then the air supply hole 51 is directed in the direction shown in the figure. In the discharge chamber, gas is supplied. In addition, the bottom of the anode 45 and the bottom of the rack 451 are generally provided with a water-cooled secret (not labeled) to prevent the crucible 451 and other workpieces from being damaged at high temperatures. The water cooling system includes a cathode and a lion. The bottom of the 451 is from the cold chamber 47, and is disposed at the cooling water inlet 53 and the water outlet 54 below the annular air tank 5. The cooling water enters the water cooling chamber 47 from the water inlet 53 and is thermally checked by the support ring and the anode 45. The water outlet 54 flows out to ensure that the disaster 451 is sufficiently cooled to prevent the sweet disaster 451 and other components from being burnt. "The axial field emission cold cathode 42 includes a field emission end 422 and a field edge for supporting the field emission end. The support arm 424' plurality of insulating support arms 424 are secured to the top pole. This implementation is mining
用奈米碳管之場發射端422，其包括4底彻及一形成於該基底德表 面之奈米碳管陣列’該基底卿與絕緣支撑臂424相連接，該基底4221 外接電源用於提供一工作電壓。 一士實施例離子源40通過蘭背板55安裝於真空室壁内，其工作原理與 第-貫施例相同。可以理解的係，本發卿子源之場發射冷陰極除採用奈米 碳管外’還可採用各種適宜於場發射讀料，包括各種針尖結構例如各種 金屬尖、非金屬尖、化合物尖、奈米杆狀結構等；或各種薄膜結構，如金剛 石薄膜等。 本發明之離子源翻複觸魏冷陰極作為餘餘電子之陰極。場發 射冷陰極之1作職觀’如’湖絲綠之場發継極之功電壓大約 在20V左右，遠倾採用鎢絲或硼化鑭之工作電壓，故其具有低能耗之優點， 而且奈米碳管場發射襄置具有使用壽命長、體積小之優點。故，採用夺米碳 管場=射裝置作為陰極之離子源具有低能耗，且無 紅上所述，本發明確已符合發明專利之要件，遂依法提出專利申請。惟， 以上所述者縣本發明之較佳實刺，自不⑽鎌制本案之+請專利範 圍。舉凡熟悉本案技藝之人士援依本發明讀神所作之等效修娜或變化，皆 應涵蓋於以下申請專利範圍内。 【圖式簡單說明】 第一圖係先前技術之離子源之剖面示意圖。 第二圖係本發明第一實施例之離子源之剖面示意圖。 第三圖係本發明第二實施例之離子源之剖面示音 【主要元件符號說明】 離子源 30 «40 場發射冷陰極 32，42 放電室 34 »44 陽極 35 ’ 45 磁路 36 水冷室 47 螺检 48 佈氣板 49，312 環型佈氣槽 50 供氣孔 51 供氣管道 52 ， 313 進水口 53 出水口 54 法蘭背板 55 1322996 f i修正替換頁 場發射端 322 >422 絕緣支樓臂 324 ， 424 掛禍 351 ，451 頂部磁體 364 ， 464 背磁極 461 磁體 462 外磁極 463 基底 3221 ， 4221 奈米碳管陣列 3223 ，4223The field emission end 422 of the carbon nanotube includes a bottom portion and a carbon nanotube array formed on the surface of the substrate. The base is connected to an insulating support arm 424. The substrate 4221 is externally supplied with a power source for providing A working voltage. The first embodiment ion source 40 is mounted in the wall of the vacuum chamber through a blue back plate 55, and its operation principle is the same as that of the first embodiment. It can be understood that the field of the cold cathode of the hair source of the present invention can be used in addition to the carbon nanotubes, and various suitable for field emission reading materials can be used, including various tip structures such as various metal tips, non-metal tips, compound tips, Nano-rod structure, etc.; or various film structures, such as diamond films. The ion source of the present invention retries the Wei cold cathode as the cathode of the residual electrons. Field emission cold cathode 1 job view 'such as 'Husi green field field bungee power voltage is about 20V, far tilt using tungsten wire or lanthanum lanthanum working voltage, so it has the advantage of low energy consumption, and The carbon nanotube field emission device has the advantages of long service life and small volume. Therefore, the use of the carbon nanotube field = emitter device as the cathode ion source has low energy consumption, and no red, the invention has indeed met the requirements of the invention patent, and patent application is filed according to law. However, the preferred thorns of the invention described above are not subject to the patent scope of the case. Anyone who is familiar with the skill of the present invention should be included in the scope of the following patent application. BRIEF DESCRIPTION OF THE DRAWINGS The first figure is a schematic cross-sectional view of a prior art ion source. The second drawing is a schematic cross-sectional view of an ion source according to a first embodiment of the present invention. The third drawing is a cross-sectional sound of the ion source of the second embodiment of the present invention. [Main component symbol description] Ion source 30 «40 field emission cold cathode 32, 42 discharge chamber 34 » 44 anode 35 ' 45 magnetic circuit 36 water cooling chamber 47 Screw check 48 air plate 49, 312 ring air groove 50 air supply hole 51 air supply pipe 52, 313 water inlet 53 water outlet 54 flange back plate 55 1322996 fi correction replacement page field transmitting end 322 > 422 insulating branch Arm 324, 424 hazard 351, 451 top magnet 364, 464 back magnetic pole 461 magnet 462 outer magnetic pole 463 base 3221, 4221 carbon nanotube array 3223, 4223