TWI322518B - - Google Patents

Description

1322518 IX. Description of the Invention: [Technical Field] The present invention relates to a solid-state light-emitting element and a method of manufacturing the same, and in particular to a vertical-conducting light-emitting diode and a method of manufacturing the same. [Prior Art] The light-emitting diode is distinguished by the manner in which the current is diffused after the application of the electric energy, and can be divided into a horizontal-conducting light-emitting diode in which the current is regarded as "horizontal diffusion", and a vertical conduction method in which the current is regarded as "vertical injection". Referring to FIG. 1 , in the case of the current vertical-conducting light-emitting diode i, the structure comprises a plate-shaped substrate 丨丨, and a piece is bounded with the substrate and can be The photoelectric effect produces a quantum unit 12 of light and an electrode 13 that forms an ohmic contact with the quantum unit 12. The substrate 11 is made of a conductive metal or an alloy, and is in ohmic contact with the sub-unit 12 for use as an electrode, and can cooperate with the sheet electrode 13 to supply electric energy to the quantum unit 12 to be photoelectrically Effect luminescence. The quantum unit 12 has a current diffusion layer 121 formed of a material transparent and capable of laterally diffusing current flow and bonded to the substrate U, and a second type of cladding layer 122 connected to the current diffusion layer 121 (ie, ptype) a cladding layer, a first type of cladding layer 123 spaced apart from the second type of cladding layer 122 and connected to the electrode, and a layer sandwiched between the first and second types of cladding layers 123 and 122 The active layer i24 (active layer), the first and second type cladding layers 123, 122 form a barrier energy barrier with respect to the active layer 5 1322518 layer 124 and can generate photons by photoelectric effect when current passes. When electric current is applied from the electrode 13 and the substrate n used as the other electrode, current flows laterally through the current diffusion layer 121 and then vertically flows through the first and second type cladding layers 123, 122 and the active layer 124. The photon is generated by the photoelectric effect, and the vertical-conducting light-emitting diode 1 is caused to emit light outward. In addition, in order to increase the overall light-emitting luminance of the vertical-conducting light-emitting diodes, for example, a window layer (wind〇w 丨叮er) capable of increasing the Hugh extraction efficiency may be formed in the quantum unit 12, or A structure such as a reflective layer (mirror) that can reflect light is designed on the substrate η. Since most of these structures are well known in the art, detailed descriptions thereof will not be repeated here. (The structure is not shown in the figure) π As a whole, the current vertical-conducting light-emitting diode i, since the light generated by the quantum single-turn 12 is emitted from the top of the first type of cladding | 123 Because the partial light travel angle is limited and then totally reflected back inside the component, internal heat is caused, which leads to a decrease in the life of the component. In addition, it also has the disadvantage of insufficient brightness of the light. Although there have been a number of technical documents suggesting, for example, roughening the surface on which the light is intended to travel, thereby increasing the tb rate at which the light is diverging outward, reading the luminance of the light, and simultaneously reducing the ratio of the light that generates total internal reflection to reduce the inside. The heat of the production of glutinous rice, although these roughening methods can indeed improve the ratio of light generated inside the light, but the light that wears the top surface is still in multiple directions, so the order is Although it has improved, 6 1322518 is a shortcoming that the brightness of the light is not uniform enough and the light is not concentrated enough. Therefore, the current vertical conduction light-emitting diode 1 still needs to be improved. SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a vertical-conducting light-emitting diode that emits light uniformly and concentrated. Further, another object of the present invention is to provide a method of manufacturing a vertically-conductive light-emitting diode which emits light uniformly and concentrated. • Thus, the high-intensity light-emitting diode of the present invention comprises a plate-shaped substrate, a quantum unit, and a piece of electrode. The plate-shaped substrate is electrically conductive. The quantum unit of the layer is bonded to the substrate and can generate light by photoelectric effect, and has a first type of first layer and a second type of cladding layer, and a layer is formed on the first and second type cladding layers. An active layer, the first type of cladding layer forms a quantum energy barrier with respect to the active layer, the first type of cladding layer includes a etch stop portion connected to the active layer, and a layer has a majority of The portion of the column of the light-correcting column of the submicron-scale protrusion is integrally protruded and has a height of a plurality of light-correcting columns of the column portion and a refractive system of the surrounding medium. The light generated by the quantum unit is 4 The probability of scattering into the I is increased, and then substantially forward outward. The shoulder electrode is in phase contact with the quantum unit, and the quantum unit can be supplied with electrical energy to cause the quantum unit to emit light. Further, the method for producing a vertical conduction light-emitting diode includes the following steps. First, a quantum unit is formed on an epitaxial substrate, and the quantum single 7 element sequentially has a first type of cladding layer, an active layer, and a second type of cladding layer 'and the first and second type cladding layers are opposite to the The active layer forms a quantum energy barrier and produces light with a photoelectric effect. At the same time, a conductive substrate can be prepared. The epitaxial substrate on which the quantum unit is formed is then press-bonded to the substrate and the prepared substrate, and the epitaxial substrate is removed. And removing the exposed top surface of the semi-finished product after the epitaxial substrate is removed, and the structure of the first type of cladding layer remains as an etch stop portion connected to the active layer, and the layer includes a plurality of roots The top surface of the etch stop is extended and the enthalpy is a sub-micron-scale column of the light-correcting column. Finally, a plurality of light-correcting columns in the predetermined block of the pillar portion are removed, and a piece of the electrode is formed of a conductive material in the block to complete the fabrication of the vertical-conducting light-emitting diode. The effect of the invention is to etch the first type of cladding layer to form a light-correcting column with a plurality of roots of sub-micron scale, whereby the matching of the light-correcting column with the surrounding medium can increase the scattering of light during traveling. The number of times to change the direction of travel of the light 'the direction of travel of the light that causes the element to diverge outwardly is changed to travel substantially in the forward direction, thereby concentrating and uniformizing the illumination of the element. [Embodiment] The foregoing and other technical aspects of the present invention The features and functions of the present invention will be apparent from the following detailed description of the preferred embodiments. Before the present invention is described in detail, it is to be noted that in the following description, the similar elements are denoted by the same reference numerals. Referring to Figures 2 and 3, a preferred embodiment of the vertical-conducting light-emitting diode 2 of the present invention comprises a substrate 3 having a rectangular plate shape and a quantum unit bonded to the germanium substrate 3. 4, and an electrode 5 forming an ohmic contact with the quantum unit 4. The block substrate 3 is mainly made of a conductive metal or an alloy and is in ohmic contact with the quantum unit 4 for use as an electrode.

At the same time, the sheet electrode 5 is supplied together to supply electric energy to the quantum unit 4 to emit light by photoelectric effect.

The block substrate 3 has a base layer 3 made of a conductive and heat-conductive material and a reflective layer 32 connected to the base layer 31 by a material which is electrically conductive and thermally conductive and has a high refractive index. The base layer Η further includes a layer central layer body 311 ′ and a plurality of stacked film bodies 312 respectively formed on the opposite ends of the central layer body, and the reflective layer 32 is composed of at least one reflective film body 321 stacked; Preferably, the central layer body 3 ιι is selected from one of materials such as Shi Xi 'copper ' Ming, carbon 'diamond' nitriding, nitriding lock, etc. 'The stacking film body 312 and the reflecting film body 321 are Each of which is selected from the group consisting of, for example, chromium, palladium, platinum, titanium, nickel, copper, rhodium, magnesium, aluminum, silver, gold, and/or an alloy of such metals, is formed of a material such as different thicknesses and element types. The majority of the formed metal and/or alloy film body can be firmly bonded to the unit 4, and can conduct electricity, conduct heat, and reflect the amount of light emitted by the unit* toward the substrate 3 to increase The vertical conductivity of the two-pole light-emitting diode It 2 is upward. In this example, the central layer body 3U' is made of copper material, and then three layers of thicknesses of 40 〇A, 40 〇A, and 20,000 Å are formed on the upper surface of the 13 1322518 by chrome, surface, and gold. The layer stacking film body 312 and the three layers of the stacked body 312 having a thickness of 300 A, 10000 A, and 50 A, respectively, are formed by using chromium, nickel, and gold as materials, and the base layer 31 ′ is formed and sequentially chrome Aluminum, platinum, titanium, gold/tin, gold as a material, and a six-layer reflective film body 321 having a thickness of 10 〇A, 2000 A, 2000 Å, 600 A, 20000 A, and 100 persons is formed on the base layer 31 to constitute the layer. The reflective layer 32, which in turn constitutes the bulk substrate 3, is exemplified.

The quantum unit 4 has a layer of a current diffusion layer 41 formed of a material transparent to the current and capable of laterally diffusing and flowing (for example, indium tin oxide) to be in contact with the reflective layer 32 of the substrate 3, and a layer connected thereto. a second type of cladding layer 42 on the current diffusion layer (ie, a small coffee cup

a first type of cladding layer 43 (ie, n_type cladding layer) separated from the second type of cladding layer 42 and connected to the electrode 5, and a layer interposed between the first and second type cladding layers 43 and 42 The active layer 44, and a layer of a cover layer 45 formed on the side surface of the first-inner cladding layer 43, 42 and the active layer 44 to limit light leakage, the first 'type 2 cladding layers 43, 42 are opposite The active layer 44 forms a quantum energy barrier and can generate photons by a photoelectric effect when the current passes. The mask 45 is made of oxidized stone (Si〇2) and has a thickness of ~ to prevent leakage of the side peripheral surface. In turn, the component light efficiency is increased. (4) The coating 43 includes a layer J and a connecting point of the active layer 44. The group has a plurality of roots from the stop of the surname, such as an integral portion, and the south is on a submicron scale (about 1〇〇〇A~2000〇A) The light correction column sees the branch 433, which is formed by the deep (four) 10 (the manufacturing method is to be continued later), and the majority light Correcting the difference of the refractive index of the medium surrounding the column 432 (in this case, air) is similar to the effect of the waveguide cavity and the path of the waveguide, so that the quantum unit 4 is generated by the photoelectric effect and correspondingly passes through the top of the first type of cladding layer 43. The probability of scattering of the surface light increases, and thus proceeds substantially upwards and forwards to enhance the luminance of the element. The sheet electrode 5 is disposed on the etching stop portion 431 of the first type cladding layer 43 and is in ohmic contact with the first type first cladding layer 43 and is made of a metal element such as gold, chromium, aluminum, titanium or nickel. The formed metal and/or alloy film stack is formed to have a thickness between 10A and 3〇〇〇〇a, and the quantum unit 4 can be supplied with electric energy in cooperation with the substrate 3; A three-layer metal film body 51 in which three kinds of metal materials of chromium, platinum, and gold are formed by a thickness of 4 inches from the bottom to the top, and is illustrated as an example. When electric energy is applied from the electrode 5 and the substrate 3, a current is laterally dispersed and circulated through the current diffusion layer 41, and then vertically flows through the first and second types of cladding layers 42, 42 and the active layer 44 to generate light by a photoelectric effect; The light travels partially toward the substrate 3, and is reflected by the reflective layer 32 of the substrate 3 to travel toward the electrode 5; the portion of the light traveling toward the peripheral surface of the quantum unit 4 is covered by the mask 36. Restricted without leaking outward, and then traveling toward the electrode 5 after being reflected and refracted within a plurality of times within the element; partially traveling directly toward the direction of the electrode 5, and being reflected and refracted toward the electrode 5 The light traveling in the direction is formed by the majority of the light-correcting column 432 and the surrounding air medium to form an effect similar to the waveguide cavity and the path of the waveguide, so that the light follows the principle of reflection and refraction of light in the cavity and the path. No 11 1322518 Correction changes the angle of incidence and the angle of reflection, and increases the number of scattering times, and then substantially upwards and forwards to enhance the brightness of the light-emitting diode while the light travels inside the element. After the internal heat converted by the multiple reflection and refraction travel, the reflective layer 32 and the base layer of the substrate 3 are directly conducted and dissipated to the outside, and the high heat dissipation efficiency and the high efficiency of the combination of the high electron holes are improved. Luminous efficiency.

The preferred embodiment of the above-described vertical-conducting light-emitting diode of the present invention can be more clearly understood after the following description of the manufacturing method.

Referring to FIG. 4, the above-mentioned vertical-conducting light-emitting diode is produced by first performing step 6 and selecting a sapphire material whose lattice constant is matched with a gallium nitride-based semiconductor material as a crystal substrate for insect crystals, in order. The worm crystal grows a j-layer type-type cladding layer 43 (ie, an n-type cladding layer), an active layer 44, and a first-type cladding layer 42 (ie, a ruthenium-type cladding layer), followed by no more than 8×10 −T 〇rr 2 The layer of current diffusion layer is formed on the first type of cladding layer 42 by indium tin oxide using a sample or sputtering or excimer laser coating under a pressure of a predetermined W and in a predetermined oxygen-containing atmosphere. 41, and after forming the layer current diffusion layer 41, then under the vacuum environment pressure, and in the atmosphere of the combination of two, the combination of the current expansion of the layer is performed at a high temperature; Preparation by, for example, a steaming or splashing side. The germanium material forms the layer to cover the crucible 45, and the quantum unit 4 is completed in step 62H and FIG. 5'. While the step 61 is performed, the substrate 3 of the block (4) can be simultaneously wounded; the step 62 is advanced in order. 12 1322518 二丁:=Step 71 'Select steel as the layer of the central layer of the body 3 ιι, then carry out the second step 'select chrome, face, gold as the material in the layer of the central layer of the body 3d by evaporation or splatter The plating method forms a three-layer stacking film body 3] of thickness _a, 40 〇a, 20000 A, and chrome, recording, and gold are materials at the lower interface of the central layer body 311 of the layer, and are also vapor-deposited or miscellaneous. By forming a three-layer stacking film body 312 having thicknesses of 3〇〇A, 10_A, and 5〇A, respectively, the base contact 31 is formed, and then performing a sub-step 73, followed by the network, the inscription, and the beginning.

, titanium, gold / tin, gold as a material, on the base layer 31 of this layer by distillation or minus the clock to form a thickness of 100A, 2〇〇〇A, 2〇〇〇A, _a, 20000A, secret After the six-layer reflective film body 321 constitutes the reflective layer 32 of the layer, the step 74 is performed in an atmosphere selected from the group consisting of pure gases, i 〇 (rc~8〇 (temperature effect of TC. 〜5~80) In a minute, the constituent materials of the stack of film and the reflective film II 321 are fused together to complete the preparation of the block substrate 3. Referring to Fig. 4, then step 63 is performed, and the finished product obtained in step 61 is quantum. The current diffusion layer 41 of the cell 4 is press-bonded to each other in contact with the reflective layer 32 of the substrate 3 prepared in the step 62. It is to be additionally explained herein that the substrate 3 and the germanium quantum unit 4 are provided. The bonding is more stable. In the process of preparing the substrate 3, some of the layer reflective film bodies 321 constituting the reflective layer 321 may be formed on the current diffusion layer 41 of the quantum unit 4. Both, due to this

Evaporation, sputtering or other methods of plating the film, stacking the batch A • a · object changes, a variety of ways, not here - detailed description. Then proceeding to step 64', the step 63 is made to remove the crystallized crystal 13 1322518 substrate into ασ, and the bottom surface of the quantum unit Ψ · ο- ^ Β®, ^ λ. The way to implement this step is to protect the road 4k η > J: 5 B alt with chemical silver engraving, wet money engraving, dry etching or even mechanical grinding, etc., 粍兮 曰 Ate This ruthenium is removed by chemical money engraving The Lei Day substrate avoids damaging the structure of the first division, A ^ ^ maize coating 43. The process proceeds to step 65, from the mouth + the 矣 〇 拓 矣 矣 矣 步骤 步骤 步骤 步骤 步骤 步骤 步骤 步骤 步骤 步骤 步骤 步骤 步骤 步骤 步骤 步骤 步骤 步骤 步骤 步骤 步骤 步骤 步骤 步骤 步骤 步骤 步骤 步骤 步骤 步骤 步骤 步骤 步骤 步骤 步骤 步骤 步骤 步骤The layer etch stop portion 43A, ^^ and the layer includes a plurality of light correction columns

The column portion 433 of 432. Referring to FIG. 6 , this step 65 is a step 81 隹 隹 A A 疋 疋 疋 81 81 81 81 81 81 81 81 81 81 81 81 81 81 81 81 81 81 81 81 81 81 81 81 81 81 81 81 81 81 81 81 81 81 81 Forming a layer 保护 1 protective layer for the material; then etching down from the (four) protective layer in a sub-step 82 and the depth is required to be from the surface of the first type of cladding layer 43 downward ιοοο Α The eclipse & 丨 丨 &; 凤 出 该 该 该 该 该 该 该 该 该 该 该 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。

较佳 preferably 'performing the oxide of the step 81 shaped wire protective layer may be, for example, dioxide dioxide 'titanium oxide, nickel oxide, and indium tin oxide, etc., as a protective layer for subsequent deep (four) time 2; Sub-step 82 can be applied by dry etching such as ion (four) technology, inductive surface-matching plasma technology or induced ion technology, and nitrogen gas (Nj, ammonia (CHj, argon (heart), chlorine (C12), chlorine) Boron (BCD, carbon fluoride (eh), vaporized sulfur (SF6) and other gases and / or the above mixed gas in different proportions as etching gas; or wet etching to hydrochloric acid (Ηα), nitric acid ( HN〇s), potassium hydroxide (ΚΟΗ), sodium hydroxide (NaOH), sulfuric acid (h2S04), phosphoric acid (HsPO4) and/or the above mixed solutions in different ratios. 14 J Figure 4, then proceed to step 66 And removing the first modified column ' corresponding to the electrode 5 and forming the metal film body 5 of the 20_sheet metal in the region, and the metal film body 51 and the thin metal film body 5 - 1 are stacked. Forming the electrode 5' to complete the vertical conduction light-emitting diode 2 of the present invention Produced good example of embodiment.

As can be seen from the above description, the present invention mainly proposes that a plurality of optical correction columns 432 formed by deep (four) of the vertical-conducting light-emitting body 2' and the surrounding air medium form an effect similar to the waveguide resonant cavity (four) and the path, and Correcting the person (4) and the inverse (4) of the emitted light, increasing the number of scatterings, causing the light to travel substantially upwards and forwards, thereby relatively increasing the luminance of the vertical-conducting LED 2; and, at the same time, by constituting The substrate layer 31 of the substrate 3, the reflective layer 32 and the like, and the light can be internally refracted and internally reflected to be forwardly and outwardly emitted to assist the illuminating efficiency of the lifting element; The internal heat generated by the internal refraction and internal reflection can also be directly transmitted to the outside through the substrate 3, thereby making the component high.

The efficiency of heat dissipation increases the efficiency of the combination of the electron holes and improves the overall luminous efficiency. Further, as is apparent from the description of the manufacturing method of the present invention, the light-correcting column 432 of the vertical-conducting light-emitting diode 2 of the present invention must be an oxide, particularly, for example, cerium oxide, titanium oxide, nickel oxide, and indium tin oxide. The result of the deep etching to the submicron scale without damaging the structure of the first type cladding layer 43 as the protective layer for the deep etching of the first type resist layer 43 is not the simple one proposed in many documents. The result of random etching roughening; in addition, 'by the complete substrate fabrication and the process of bonding with the quantum cell, the simultaneous vertical conduction light-emitting two (four) i common heat dissipation and current diffusion problem during operation' is effective Improve the light efficiency of the component. In summary, the present invention mainly proposes a vertical-conducting light-emitting body having a light-correcting column 432 capable of increasing the light-scattering probability: a polar body 2, and a manufacturing method of the vertical-conducting light-emitting diode 2, but Improvement: The vertical light-emitting diode II has the disadvantages of insufficient brightness and uniformity of light emission, and achieves the purpose of the invention. The above is only the preferred embodiment of the present invention, and the scope of the present invention is not limited thereto, that is, the simple equivalent changes and modifications made by the scope of the invention and the description of the invention are all It is still within the scope of the invention patent. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic cross-sectional view showing the structure of a conventional vertical-conducting light-emitting diode; FIG. 2 is a cross-sectional view showing a preferred one of the vertical-conducting light-emitting diodes of the present invention. FIG. 3 is a partially enlarged view showing the direction of travel of a plurality of light-correcting columns of the vertical-conducting light-emitting diode of FIG. 2; FIG. 4 is a flow chart illustrating the vertical-conducting light-emitting diode of FIG. FIG. 5 is a flow chart illustrating a sub-step process of performing step 62 in the manufacturing method of FIG. 4; and FIG. 6 is a flow chart illustrating the manufacturing method of FIG. Perform the sub-step procedure of step 16 1322518 65. 1322518

[Main component symbol description] 2 Vertically-conducting light-emitting diode 5 pole body 51 3 Substrate 61 31 Base layer 62 311 Center layer body 63 312 Stacking film body 64 32 Reflecting layer 65 321 Reflecting film body 66 4 Quantum unit 71 41 Current Diffusion layer 72 42 Second type cladding layer 73 43 First type cladding layer 74 431 Etching stop part 81 432 Light correction column 82 433 Column bundle part 83 44 Active layer 45 Masking film electrode Metal film body Steps Steps Steps Step steps Sub-steps, sub-steps, sub-steps, sub-steps, sub-steps, step 18

Claims (1)

1322518 X. Patent application scope: 1. A vertical-conducting light-emitting diode comprising: a plate-shaped substrate electrically conductive; a quantum unit 'bonded to the substrate and capable of generating light by photoelectric effect' having a layer spaced apart a first type of coating layer and a second type of coating layer, and an active layer formed between the first and second type coating layers, the first and second types of the first layer and the second layer forming a quantum with respect to the active layer The energy barrier, the first type of cladding layer includes a etch stop portion connected to the active layer, and a layer having a plurality of light-correcting columns integrally protruding from the bottom surface of the etch stop portion and having a height of submicron dimensions. In the column portion, the difference between the refractive index of the plurality of light-correcting columns of the column portion and the surrounding medium causes an increase in the probability of scattering of light generated by the quantum unit during traveling; and a piece of the electrode is in close contact with the quantum unit, and The quantum unit can be supplied with electrical energy together with the substrate to cause the quantum unit to emit light. 2. The vertical-conducting light-emitting diode according to the scope of the patent application, wherein the substrate has a base layer made of a material that is electrically conductive and thermally conductive, and one layer is electrically conductive and thermally conductive. And a material having a high refractive index and a reflective layer connected to the base layer. 3. The vertical-conducting light-emitting diode according to claim 2, wherein the base layer comprises a central layer body, and a plurality of stacked film bodies respectively formed on opposite interfaces of the central layer body, The reflective layer comprises: a reflective film body, and the central layer body is made of a material selected from the group consisting of: ♦, copper, inscription, carbon, diamond, aluminum nitride, magnesium nitride, The plurality of stacked film bodies are respectively selected from the group consisting of the following 19 1322518: complex, palladium, platinum, titanium, nickel, copper, zinc, magnesium, aluminum, silver, gold, and the like. Or a combination of the materials, wherein the reflective film body is made of a material selected from the group consisting of chromium, palladium, platinum, titanium, nickel, copper, zinc, magnesium, aluminum, silver, gold, and One of these combinations. 4. The vertical-conducting light-emitting diode according to claim 3, wherein the quantum unit further has a layer of a material transparent and capable of laterally diffusing current flow and formed on the second type of cladding layer. A current spreading layer connected to the substrate. 5. The vertical-conducting light-emitting diode according to claim 4, wherein the quantum unit further has a cover film formed on the side peripheral surface to prevent light leakage. 6. A method for fabricating a vertical-conducting light-emitting diode, comprising: (a) forming a quantum unit on an epitaxial substrate, the quantum unit sequentially having a first type of cladding layer, an active layer, and a layer a type II batch coating, and the first and second type cladding layers form a quantum energy barrier with respect to the active layer to generate light by a photoelectric effect; b preparing an electrically conductive substrate; and the finished product obtained by the step (a) is The quantum unit and the substrate prepared in the step (b) are press-bonded to each other; (d) (e) removing the epitaxial substrate of the finished product obtained in the step (c); obtained from the step (d) After the removal of the finished epitaxial substrate, the surface of the I subunit is left down, and the structure of the first type of cladding layer is left in an etch stop portion 20' connected to the active layer, and the layer includes a plurality of The top surface of the etch stop extends and asks for a column portion of the sub-micron-scale light-correcting column; and (f) removes a plurality of light-correcting columns in the predetermined block of the plexus, and is in the block Forming a piece of electrode with a conductive material to obtain the vertical conductive light Polar body. 7. The method of manufacturing a vertical-conducting light-emitting diode according to item 6 of the fourth patent scope, wherein the quantum unit formed by the step (a) further has a layer formed of a material transparent and capable of laterally diffusing and flowing. A current spreading layer on the second type of cladding layer. The method for manufacturing a vertical-conducting light-emitting diode according to the sixth or seventh aspect of the invention, wherein the quantum unit formed in the step (a) further has a layer formed of yttrium oxide as the material. a type II coating layer and a side surface of the active layer to prevent light leakage. 9. The method of manufacturing a vertical-conducting light-emitting diode according to claim 6, wherein the step (b) has the following steps: (bl) a substance selected from the group consisting of The material serves as a central layer body: bismuth, copper, aluminum, carbon, diamond, aluminum nitride 'magnesium nitride, (b2) is selected from the group consisting of: the material is formed on the opposite sides of the central layer body to form at least one layer a stack of cladding: chromium, palladium, indium, titanium, nickel, copper, zinc, money, sau, silver, gold, and combinations thereof, such that the central layer and the layers of the layer form a base layer, 21 (b3) is selected from the group consisting of: forming at least one reflective film body on one surface of the base layer, such that the at least one reflective film body constitutes a reflective layer, thereby causing the base layer and the reflection The layers form a substrate that is electrically conductive, thermally conductive, and that reflects light. The method for manufacturing a vertical-conducting light-emitting diode according to claim 9, wherein the step (b) further has a step (b4) in an atmosphere selected from the group consisting of pure gases, L〇〇£»C~8〇〇. The (10) degree of 〇 is 5 to 80 minutes, and the constituent materials of the stacked layer and the reflective film are fused. The method for manufacturing a vertical light-emitting diode according to the sixth aspect of the invention, wherein the step (f) is a material selected from the group consisting of: platinum/gold, chromium/ Aluminum/chromium/gold, chrome/aluminum/titanium/gold, chrome/aluminum/nickel/gold, chrome/aluminum/platinum/gold, and combinations of these. 12. The method of manufacturing a vertical-conducting light-emitting diode according to claim 6, wherein the step (e) has the following steps: (el) an oxide on the surface of the first type of cladding layer Forming an etch protection layer; and () etching downward from the surface of the etched protective layer, and the depth is from 1 〇〇〇Α to 2000 向下 from the surface of the first type of cladding layer, and the first type is made The structure retained by the blanket layer is a layer of a stop portion connected to the active layer and a column portion including a plurality of light-correcting columns. 13. The method of manufacturing a vertical-conducting light-emitting diode 22 1322518 body according to claim 12, wherein the etching protection layer is formed to have a thickness of 500 to 10000 Å. U. The method for producing a vertical-conventional light-emitting diode according to claim 13, wherein the oxide is selected from the group consisting of: the oxide is selected from the group consisting of: Cerium oxide, titanium oxide, nickel oxide, and indium tin oxide. 15. The method of manufacturing a vertical-conducting light-emitting diode according to claim 12, wherein the step (e2) is an inductively coupled electro-polymerization technique and is passed into a group selected from the group consisting of The work is carried out: nitrogen, ammonia, argon, gas, boronized carbide, carbon fluoride, sulfur fluoride, and combinations thereof. 16. The method of manufacturing a vertical-conventional light-emitting diode according to claim 12, wherein the step (e2) is directly etched from a group selected from the group consisting of: hydrochloric acid, Nitric acid, hydrazine hydroxide, sodium hydroxide, sulfuric acid, phosphoric acid, aqua regia, and combinations of these. twenty three