丄⑽947 玟、發明說明： 【發明所屬之技術領域】 本發明係關於積體電路之製造 的光罩之製造。 "^以及用於製造積體電路 【先前技術】 自從半導體元件最初於數十年前 何尺寸已經顯著減小。結果，於半導=，該等元件的幾 係已經提高。提高的電路密度係已度 以製造半導體元件之製程。 1外“求於用 2印術（photoIlthography)係—種用以形成精密圖案 、寺蝕刻的基板而形成期望的元件 /、 χ特徵之技術。概括而 :阻：係運用光圖案以曝光沉積於-基板表面上的 才料，以在姓刻製程之前而顯影精密；圖案於基 上。於習用的光蝕印製程，一光阻传 ' …m 丨表柱 t阻係施加至待蝕刻之材料 财著待㈣的特徵（諸如：接點、通孔、或互連件 )\錯者透過-純印W以曝光該光阻至—光圖案而界定 二先的光罩係對應於特徵的期望配置。—光源（例如. ^ i外線（uV))係可運用以曝光該光阻，以化學方式改變 =阻之組成。改變後或未改變的光阻材料係接著由化學 理所移除’以暴露基板之下層材料’而且所保留的光阻 科係維持為一保護覆層。一旦期望的光阻材料係移除以 也成於光阻之期望圖案，暴露的下層材料係接著為姓刻以 升> 成於基板表面之特徵。 光蝕印光罩（或光網（reticle))係典型包括一基板，其由 ⑽947 -光學透明的石夕基材料(諸如：石英，即：二氧化 所作成具有圖案化於基板表面之—不透明的光屏蔽2 声 之金屬(典型為：鉻）。該金屬層係圖案化以形成特徵，： 界定圖案且對應於待轉移至基板之特徵的尺寸。概括而2 ’習用的光罩係藉著首先沉積一薄層的金屬於包含與 ，明的石夕基材料（諸如：石英）之一基板上、以及沉積一= 且層於缚金屬層上而製造。光阻係接著運用習用的圖案化 技術而圖案化。㈣金屬層以移除未受到光阻所保護^材 料’因而暴露下層的矽基材料。 ‘為了達成目前的電路密度，係運用交替相位移的光罩 苴藉著提高由光罩所產生的影像之解析度，以提高形成於 “反上的姓刻圖案之精密度。交替相位移的光罩係藉著如 所述的相同方法而製造，但具有額外的步驟：姓刻所 暴基材料，以形成使得通過的光線相位#咖度之 特徵。相位移後的光線係提高於特徵邊緣之對比，因：允 許較為精密的圖案形成於下層的基板。相位移的程度係基 於基板之組成物與厚度。光罩特徵係蝕刻 變：料之厚度，且因而改變光線…。欲產生期望的相 位和：形成於基板之矽基材料的蝕刻特徵係必須以特徵結 構之最小量的缺陷而精密形成於基板。 歸因於製造半導體元件所需之高數目的步驟，於元件 製程之各個步驟係必須具有高生產力。光罩之品質係具有 ::生產力之直接衝擊’例如：⑤光罩之任何缺陷或圖案 決差係忠實複製於暴露至該光罩之各個晶圓。 1320947 為了避免此等圖案誤差’光罩圖案係於光罩製造期間 而受到大範圍的測量。光罩圖案之傳真度（fidelity)係於光 罩製程之不同點而作檢查。舉例而言，為了隔離由電漿蝕 刻製程所引入之任何圖案誤差，圖案（關鍵尺寸或CD (critical dimension))係在蝕刻之前而測量（典型藉著掃描電 子顯微術）。一旦該蝕刻製程已經完成且遮罩層已經移除（ 剝除）’相同圖案係再次測量。 延鸣隹蝕刻荊興蝕刻後的測量之比較，計算且評估針 對CD偏移（bias)與CD線性度〇inearity)之值。cd偏移係 於製程期間之一個特徵的寬度變化之一測量(例如：在蝕： 前測量300 nm寬而在蝕刻後測量29〇 nm寬之一 造成W⑽之-CD偏移卜⑶線性度係檢驗於—特徵尺 寸範圍之CD偏移（例如：若一 300咖線之CD偏移為1〇 :且-麵線之CD偏移為M m ’則針對該製程之 線性度係於3GG-1GGG_特徵範圍而報告為4_)。 旦I姓刻製程之解析度係指一圖案轉移的傳真度之—測 朵罢旦/你 偏移係指於蝕刻影像盥 忐罩衫像之間的側向尺度之差里。_ ，、 ^ # ，、 零偏移製程係產生符 :先罩邊緣之-垂直邊緣輪廊。換言之，付 件特徵層、與圖幸化的# Bb ^ 蚀相疋 一圖案化的先阻係將均為精確對 ，於側向方向係不存在元件 、此&形 係完整轉移。此情形得代表二層或先…刻，且圖案 係代表異向性蝕刻之極端者。 於早期的光| j古金·，口》 ,, 早—的特徵尺寸係視作最為重要 故整體的蝕印製程係集 々垔要 及5周1以產生此關鍵的特徵尺 1320947 寸。 然而’目前的光罩技術（9〇 η μ & 即點及超過者）係需要 數個關鍵特徵尺寸為一次製诰 ^ 农&於先罩，所有的特徵為同等 重要。如此，於此等數個特徵尺+ 寸之間的触刻差異或線性 度成為相當重要。關鍵尺寸（CD)# 、 ;蝕剡線性度係界定為於一 光罩的相同圖案内之小與大的輯傲 ,B 扪将徵尺寸之間的CD偏移之 差"。典型而言，小與大的特 ,„ 竹傲係於0.1 與丨.5 之間。 p 於90 nm技術節點及超過者 义、者針對相較於設計資料（亦丄(10)947 发明Invention Description: [Technical Field] The present invention relates to the manufacture of a photomask for the manufacture of an integrated circuit. "^ and used to manufacture integrated circuits [Prior Art] Since the semiconductor components were originally reduced in size decades ago, their dimensions have been significantly reduced. As a result, in semi-conductivity =, the number of elements has been increased. The increased circuit density is the process of manufacturing semiconductor components. 1 "Using photoIlthography" - a technique for forming a precise pattern, a temple-etched substrate to form a desired element / χ feature. General: resistance: using a light pattern to expose to the deposition - the material on the surface of the substrate is developed to be precise before the process of the last name; the pattern is on the substrate. In the conventional photo-etching process, a photoresist is applied to the material to be etched. Charity (4) features (such as: contacts, vias, or interconnects) \ wrong through the pure printing W to expose the photoresist to the light pattern to define the two first mask corresponds to the characteristics of the expectations Configuration.—The light source (eg, ^i external line (uV)) can be used to expose the photoresist to chemically change the composition of the resistance. The altered or unaltered photoresist material is then removed by the chemical' To expose the underlying material of the substrate 'and the retained photoresist family is maintained as a protective coating. Once the desired photoresist material is removed to also form the desired pattern of photoresist, the exposed underlying material is then surnamed The characteristics of the surface of the substrate in liters > The hood (or reticle) typically comprises a substrate consisting of (10) 947 - an optically transparent Shih-Xi material (such as quartz, ie: oxidized to have an opaque light shield 2 patterned on the surface of the substrate) a metal of sound (typically: chrome). The metal layer is patterned to form features: defining a pattern and corresponding to the dimensions of the features to be transferred to the substrate. Generalized 2' conventional reticle by first depositing a thin The metal of the layer is fabricated on a substrate comprising a Schwann material such as quartz, and a layer deposited on the metal layer. The photoresist is then patterned using conventional patterning techniques. (4) The metal layer removes the material that is not protected by the photoresist and thus exposes the underlying germanium-based material. 'To achieve the current circuit density, a photomask with alternating phase shifts is used to enhance the photomask. The resolution of the image to improve the precision of the pattern of the surname formed on the reverse. The alternating phase shift mask is manufactured by the same method as described, but with an additional step: the surname is The material is shaped to form the phase of the light passing through. The phase shifted light is increased by the contrast of the feature edges because: a more precise pattern is allowed to be formed on the underlying substrate. The degree of phase shift is based on the composition of the substrate. Matter and thickness. The reticle characteristics are etched: the thickness of the material, and thus the light.... To produce the desired phase and: the etched features of the bismuth-based material formed on the substrate must be precisely characterized by the smallest amount of defects in the features. Formed on the substrate. Due to the high number of steps required to fabricate semiconductor components, the various steps of the component process must be highly productive. The quality of the reticle has: direct impact of productivity 'eg: 5 masks of any Defects or pattern variations are faithfully reproduced on the individual wafers exposed to the reticle. 1320947 To avoid such pattern errors, the reticle pattern is subject to a wide range of measurements during reticle fabrication. The fidelity of the reticle pattern is checked at different points in the reticle process. For example, to isolate any pattern errors introduced by the plasma etching process, the pattern (critical dimension or critical dimension) is measured prior to etching (typically by scanning electron microscopy). Once the etch process has been completed and the mask layer has been removed (stripped), the same pattern is measured again. The comparison of the measurements after the Yanming etched Jingxing etching calculates and evaluates the values of CD bias and CD linearity 〇inearity. The cd offset is measured as one of the width variations of a feature during the process (eg, measuring 300 nm wide before etching: measuring 29 〇 nm width after etching results in W(10)-CD shifting (3) linearity system Check the CD offset of the feature size range (for example, if the CD offset of a 300 coffee line is 1〇: and the CD offset of the upper line is M m ', the linearity for the process is 3GG-1GGG _Characteristic range is reported as 4_). The resolution of the I-inscription process refers to the fax degree of a pattern transfer - the measurement of the stroke / your offset refers to the lateral scale between the image of the etched image In the difference. _ , , ^ # , , Zero offset process generator: first edge of the edge - vertical edge of the corridor. In other words, the feature layer of the payment, and # Bb ^ 蚀 图案 图案 图案 图案The first resistance system will be the exact pair, and there is no component in the lateral direction, and this & shape is completely transferred. This case represents the second layer or the first, and the pattern represents the extreme of the anisotropic etching. In the early light | j Gujin·, 口》,, the early--the characteristic size is regarded as the most important and the overall eclipse The set is summarized and 5 weeks 1 to produce this key feature rule of 1320947 inches. However, the current mask technology (9〇η μ & point and surpass) requires several key feature sizes for one time. ^ Nong & first cover, all features are equally important. Thus, the difference in the touch or linearity between these several feature scales + inch becomes quite important. Key size (CD) # , ; 剡 linear The degree is defined as the small and large arrogance within the same pattern of a reticle, and the difference between the CD offsets of the size of the 扪 & 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 Between 0.1 and 丨.5. p at 90 nm technology node and over-representation, compared to design data (also
柄為CD㈣偏移)之光罩鉻特徵的改良的CD =尺寸傳真度之提高需求，係對於合時及成本效益的 先網製造之一個障礙。 高品質的光罩與光網係含有跨越數個線寬之特徵；以 此方式，一光罩係可於蝕印製 衣矛壬期間而轉移一個半導體元 件之實際圖案至晶圓。CD蝕判娃μ· ώ ώ、 蝕刻線性度之降低（即使是小程 度）係視為重大且使得未來的光罩技術節點能夠承續。 =此’於光罩内的特徵（其為正確的絕對尺寸）之製造 係隨著先進的元件技術筋戥 ㈣即點而已經成為更為嚴苛。此絕對 特徵尺寸傳真度或CD雀虫刻低銘总Λ 負虫到偏移係典型為藉著於光網白底 (blank)的覆蓋鉻層頂部 尤阻遮罩的圖案產生期間改 變貧料流而達成。 於一個先進的光罩塑兹夕# + 裏私之絡電漿蝕刻步驟通常考慮為 於總光罩圖案化步驟期問所細麻+ ^ 。 那肩間所經歷之CD蝕刻偏移的大部分 才貝失者之原因。至於1 m ΛΧ -f-i δ£> itThe improved CD = size facsimile improvement of the chrome feature of the hood with a CCD (four) offset is an obstacle to the timely and cost-effective manufacturing of the first network. High quality reticle and optical mesh systems are characterized by a plurality of line widths; in this manner, a reticle can transfer the actual pattern of a semiconductor component to the wafer during etched fabric spears. The CD etchback, μ· ώ ώ, the reduction in etch linearity (even if it is a small degree) is considered significant and enables future reticle technology nodes to continue. The manufacture of this feature in the reticle (which is the correct absolute size) has become more stringent with the advanced component technology (4). This absolute feature size fax degree or CD beetle engraving Λ Λ Λ 负 负 负 负 负 负 负 负 负 负 负 负 负 负 负 负 负 负 负 负 负 负 负 负 负 负 负 负 负 负 负 负 负 负 负 负 负 负 负 负 负And reached. In an advanced reticle plastic etch # + 里 之 之 电 电 电 通常 通常 通常 通常 通常 通常 通常 通常 通常 通常 通常 通常 通常 通常 通常 通常 通常 通常 通常 通常 通常 通常 通常 通常 通常 通常 通常 通常 通常Most of the CD etch offset experienced by the shoulder is the cause of the loss. As for 1 m ΛΧ -f-i δ£> it
CD韻刻線性度，即使為小程度之CD 1320947 蝕刻偏移的降低係視為重大並且使未來的光罩技術節點能 夠承續。 如於第1圖所示’目前而言，係運用一種習用的高密 度電漿室135以蝕刻光罩145，電漿室135具有：操作在 2 MHzi—射頻產生器1〇〇,其提供電力至感應耦合式電 衆線圈105 ;操作在13.56 MHz之一射頻偏壓產生器11〇 ，其透過一阻抗匹配網路丨20而提供電力至下方電極115 :氣體入口 130，以提供一處理氣體至室135; 一泵埠14〇 ，以抽空該室。此技術對於較不先進的光罩（其利用較厚（ 例如：約1000人）且較不受限於CD蝕刻性能之鉻薄膜）是足 夠的。概括而言，目前用於光罩製造之電漿蝕刻反應器係 產生一 50 nm至60 nm的CD蝕刻偏移、以及約為一 4〇 nm的CD蝕刻線性度。是以’目前技術的電漿蝕刻反應器 知產生不符合90 nm技術節點與超過者的計劃之CD蝕刻 偏移與CD蝕刻線性度。 因此，存在針對一種電漿反應器設計及方法之需要， 以蝕刻於光罩及光網之光學吸收薄膜為具有小於3〇 之 CD蝕刻偏移及小於1〇 nm之一 cd蝕刻線性度。 先前技藝係並未提供本發明所伴隨的裨益。 【發明内容】 因此，本發明之一個目的係提出一種改良，其克服先 -技藝的裝置之不適當性，1其為針對光罩與光網的製程 之進步性的重大貢獻。 本發明之另 個目的係提出一種用於蝕刻光蝕印基板 1320947 之方法，包含步驟：署你# , 置放该光蝕印基板於一真空 撐構件上；引入至少—個處理氣體至該真空室；：= 真空室之支樓構件；及，二;7sit)頻率的-射頻偏壓至 ^敍刻该光蝕印基板。 本發明之又一個目的係提出一種用於蚀刻光 =的：少一個材料之方法，包含步驟：置放： ::真空室之-支樓構件上；引入至少-個處理氣 :至，產生一電漿；供應位於或低於離子變遷頻率的 至少一個材料。 自5玄先蝕印基板而蝕刻 本發明之再一個目的係提出一種用於 之裝置，句今.一古而一 基板 直办— ·真二至；至少—個氣體供應，連通於令 二室’以提供至少—個處理氣體至該真空室電將： 生源，以產生一電漿於該真空 水產 位在或低於離子變^射頻電源，操作 飞低於離子變遷頻率的-射頻偏塵頻# 為耦接至該光蝕印基板支撐構件。 ^、項電源 本發明之另-個目的係提出—種用 之方法，句合牛驶.里从 无姓印基板 去包3步驟.置放該光韻印基板於一真空室之—支 : ，引入至少一個處理氣體至該真空室；屋生雪 ;;供應—射頻偏厂堅至真空室之切構件；控』=電 匕之位準；及，蝕刻該光蝕印基板。 ^ ’’偏 則文係已經概述本發明之某些突 係應構成僅為說明所意圖發明之某為/此等目的 用。麩牮、， 二更為顯著的特點與應 …不同方式而應用所揭示的本發明或於 容 12 之範疇内而修改本發明， 。是以，除了申… 獲付诸多其他裨益的結果， 明之h、月專範圍所界定之本發明的範疇，本發 明之其他目的與較完整1h本發 實施例詳㈣明m 耢U發明内容與較佳 七田說明且關連於伴隨圖式而得到。 針對概述此發明^^ k G赞明之目的，此發明包含一 ，其利用—低頻射頻偏壓以鈕方，丄 方/去及裝置 月偈以蝕刻一光蝕印基板。 本發明之一個特徵係 ••一光軍或-光網）之改户Λ Λ 印基板（即 石英、石夕化翻、氮氧化^ 印基板係可由諸如 所構成，該種方法包含以下牛挪^ 先子透明材料 -^ ^ ^驟。忒光蝕印基板係置放於 具二至之一支撐構件上。 標材料之-種處理老〜 先蝕印基板勒刻-目 種處理矾體（例如：負、 备★隹 引入至真空室。待蝕μ 、 氧或氟碳化物）係 、一金屬声目標材料係可為光飯印基板本身 可選自由鉻、氧化路魏任何其他層。該金屬層係 '石… 鎢、鉬、鈕、鈦、氮化鎢'矽化鎢 夕化翻、與其組合所構成之群組 射 頻偏塵係供應至於真 A 制之射 子變遷頻率的m 構件’透過位於或低於離 繁。射㈣厂 壓頻率源以自該處理氣體產生-電 -。射頻偏壓可具有小 ^ 壓。射頻偏>1頻率係庳… 千伏(kV)之一峰對峰電 Λ 380 -f 、〜、力2百萬赫（MHz)之範圍或約 為·千赫㈣)。由於本發明 目標材料係以改良# CD4“… 暴路的 刻自該光蝕印美板，讀性度與⑶蝕刻偏移而蝕 生之於光… 由於低頻偏壓係允許由電聚所產 生之^的基板上料㈣子 13 1320947 本發明之另一個特徵係提出— 即：一光罩或一光網）之改 種用於蝕刻光蝕印基板（ 如石英、魏銷n 义方法’該光料基板係可由諸 料所構成，該種心::二與其組合之-光學透明材 -真空室之一支撐構件上。用二：。先蝕印基板係置放於 標材料之一種處理氣體（例如：基板㈣一目 引入至真空室。待蝕刻 貺、氧或齓碳化物)係 、-金屬層或已經光.卩❹^可為光㈣基板本身 可選自由鉻、氧化鉻、H何其他層。該金屬層係 、矽化鉬、與且组人所槿 I、鈦、氮化鎢、矽化鎢 變式射頻偏壓電源係供應為^控制之一調 於或低於離子變遷頻率變 芽件，透過位 理氣體產生一電衆。射頻偏壓頻率源以自該處 振幅或改變頻率而達成係可透過脈衝、改變 έ,. 脈衝式的射頻偏壓頻率且有小於 約為观或是低至約為1()%之_ 年八有1方' 小於約毫秒或約5毫秒週期’ 一脈衝週期為 為1…一峰料電二::射頻偏麼可具有小於約 〇·9ΜΗ >一„向， 頻偏廢頻率係為小於約 的处果4約為38〇他。由於本發明之電聚製程CD rhythm linearity, even for a small degree of CD 1320947 etch offset reduction is considered significant and enables future reticle technology nodes to continue. As shown in Figure 1, 'currently, a conventional high density plasma chamber 135 is used to etch the reticle 145, which has: operating at 2 MHzi - RF generator 1 〇〇, which provides power To the inductively coupled electric coil 105; operating at 13.56 MHz one of the RF bias generators 11'', which supplies power to the lower electrode 115: the gas inlet 130 through an impedance matching network 丨20 to provide a process gas to Room 135; a pump 埠 14 〇 to evacuate the chamber. This technique is sufficient for less advanced reticle (which utilizes a thicker (e.g., about 1000) and less chrome film limited to CD etch performance). In summary, current plasma etch reactors for reticle fabrication produce a CD etch offset of 50 nm to 60 nm and a CD etch linearity of about 4 〇 nm. It is known that the current state of the art plasma etch reactor produces a CD etch offset and CD etch linearity that does not meet the 90 nm technology node and the surpasser's plan. Therefore, there is a need for a plasma reactor design and method for optically absorbing films etched into the reticle and the optical web to have a CD etch offset of less than 3 及 and a cd etch linearity of less than 1 〇 nm. The prior art does not provide the benefits associated with the present invention. SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide an improvement that overcomes the inadequacy of the prior art device, which is a significant contribution to the advancement of the process of the reticle and the optical network. Another object of the present invention is to provide a method for etching a photo-etching substrate 1320947, comprising the steps of: placing the photo-etching substrate on a vacuum support member; introducing at least one processing gas to the vacuum Room;: = the vacuum building's branch building components; and, 2; 7sit) frequency - RF bias to ^ etch the etched substrate. Yet another object of the present invention is to provide a method for etching light = less than one material, comprising the steps of: placing: - vacuum chamber - on a building member; introducing at least one processing gas: to, producing one Plasma; supplying at least one material at or below the ion transition frequency. Another object of etching the substrate from 5 Xuanxian etched substrate is to propose a device for use in the present sentence. The ancient one is directly connected to the substrate - true two to; at least one gas supply, connected to the second chamber 'To provide at least one process gas to the vacuum chamber will be: source, to generate a plasma in the vacuum water production at or below the ionization of the RF power supply, operating below the ion transition frequency - RF dust frequency # is coupled to the photo-etching substrate support member. ^, Item Power Another object of the present invention is to propose a method of use, the sentence is combined with the singer. The third step is to remove the substrate from the unprinted substrate. Place the photofinishing substrate in a vacuum chamber: Introducing at least one process gas to the vacuum chamber; housing snow;; supplying - RF biasing to the vacuum chamber cutting member; controlling the value of the electric sputum; and etching the etched substrate. ^ ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' The present invention may be modified by the use of the disclosed invention or within the scope of the disclosure of the present invention. Therefore, in addition to the results of the application of many other benefits, the scope of the present invention defined by the scope of the invention is defined by the scope of the present invention, and the other objects of the present invention and the more complete 1h embodiment of the present invention (4) It is preferred that the seven fields are described and related to the accompanying drawings. For the purpose of summarizing the invention, the invention comprises a method for etching a photo-etching substrate by using a low-frequency RF bias with a button side, a side/depot, and a device. A feature of the present invention is: • a light army or a light network) Λ 印 printing substrate (ie quartz, Shi Xihua turned, nitrogen oxide ^ printed substrate can be composed of such a method, the method includes the following cattle ^ The first transparent material - ^ ^ ^ ^. The etched substrate is placed on one of the two to one of the support members. The standard material of the old treatment ~ first etched substrate engraved - the target treatment of the corpus callosum ( For example: negative, preparation ★ 隹 introduced into the vacuum chamber. To be etched μ, oxygen or fluorocarbon), a metal acoustic target material can be free of chrome, any other layer of oxidized road. The metal layer is 'stone... tungsten, molybdenum, button, titanium, tungsten nitride', and the group of radio frequency dust is supplied to the m component of the true A system. Located at or below the volatility. (4) The factory pressure frequency source is generated from the processing gas - electricity - RF bias can have a small voltage. RF bias > 1 frequency system 庳... One kilometer (kV) peak-to-peak Electric Λ 380 -f , ~, force 2 megahertz (MHz) range or approximately kHz (four)). Since the target material of the present invention is modified by the improved #CD4"...storming, the readability and (3) the etching offset are eroded to the light... Since the low frequency biasing system allows the generation by electropolymerization Substrate loading (4) 13 1320947 Another feature of the present invention is that a modification of a mask or an optical network is used for etching a photo-etching substrate (such as quartz, Wei pin n sense method) The light-substrate substrate can be composed of materials, which are: two optical composite materials - one of the support members of the vacuum chamber. The second etching substrate is placed on the processing material of the standard material. (For example, the substrate (4) is introduced into the vacuum chamber at one point. The yttrium, oxygen or yttrium carbide to be etched), the metal layer or the already light. 可^ can be the light (4) substrate itself can choose free chromium, chrome oxide, H other The metal layer system, the molybdenum molybdenum, and the group of people I, titanium, tungsten nitride, tungsten telluride variable RF bias power supply are supplied as one of the control or adjusted to lower than the ion transition frequency , generating a battery through the directional gas. The RF bias frequency source is from here. Amplitude or frequency change to achieve a permeable pulse, a change in έ, a pulsed RF bias frequency and less than about or about as low as about 1 (%) _ 8 has a square ' less than about milliseconds or A period of about 5 milliseconds' pulse period is 1... a peak charge 2:: RF bias can have less than about 〇·9ΜΗ > a „,, frequency offset frequency is less than about 4, about 38 〇 Due to the electropolymerization process of the present invention
係以改良…刻線性度與CD 許由〜“ 板，此乃由於低頻偏麼係允 所產生之於光姓印基板的發展離子電荷為耗散。 本發明之又一個特微你括山 _ - _ ^ 即 徵係美出-種用於钱刻光钱印基板（ λ罩或-先網）之改良裝置’純印基板係可為 如石英、石夕化翻、氮氧化石夕翻、與其組合之—光學透明材 14 —:所構成，泫種裝置包含下述者。用於固定光蝕印基板之 接土板支樓構件係定位於-真空室。氣體供應線路 二考、6種蝕刻氣體（例如乂氯、氟、氧或氟碳化物）至真 理至’以自真空處理室之光蝕印基板而蝕刻一目標材 料待银刻之目標材料係可為光絲印基板本身、一金屬層 或，左光姓印顯影之任何其他層。該金屬層係可選自由路 ^絡鶴翻、叙、鈦、氣化鶴、石夕化鶴、石夕化翻、 與…组合所構成之群組。輕接至基板支樓構件之一調 = 位於或低於離子變遷頻率的-調變射頻偏 严一理室之光蝕印基板。調變式射頻偏壓電源 係可為电壓控制。偏塵之調變係可透過脈衝、改變偏麼之 2幅或改變偏麼之頻率而達成。脈衝式的射頻偏屡頻率農 有小於約為鄕或是低至約為1〇%之一工作週期。⑽ 的射頻㈣頻率具有小於約1G毫秒或約5毫秒之一脈= 週期。調變射頻偏Μ具有小於約為〗5kv之—峰 由於本發明之«製程的結果，暴露的目掉 =係以改良的CD钱刻線性度與cdm刻偏移而钮刻自 '蝕印基板’此乃由於低頻偏壓係允許由電漿所產生之 於光蝕印基板的發展離子電荷為耗散。 前文係已㈣當概述本發明之較為突出 ，藉此，隨後之本發明的詳細說明係可較佳瞭解，使：； 於此技藝之助益係可更為完整認 係將敌述於後文，其構成本發明之二=:特: 1320947 熟心此技蟄人士所應認知的是，揭示的概念與特定實施例 係可易於利用作為一基礎，以修改或設計其他結構而實施 本發明之相同目的。熟悉此技藝人士亦應瞭解的是，等效 的架構係未偏離本發明之精神與範疇，如於隨附的申請專 利範圍所述者。 【實施方式】 本發明係提出一種製造光罩之方法及裝置，其相較於 2前技藝而言，改善CD蝕刻線性度與CD蝕刻偏移。此 等改良係透過連續波或是調變後的低頻射頻偏壓之運用於 光罩與光網的電漿蝕刻期間而達成。 用於姓刻光罩與光網之處理氣體係取決於待姓刻之材 料。舉例而言’基於一氟及/或氟碳化物的電衆係用於鉬之 蝕刻，雖然其他含有鹵素之氣體亦可運用。含有氣與氧之 電漿係典型為用於含有鉻的薄膜之電漿蝕刻。 現行技藝的光罩蝕刻系統係利用一高密度射頻電漿源 例如.於—處理真空室之種種頻率的電子迴旋加速器共 ^(ECR, E]ectr〇n Cyclotron Resonance) > ϋ ^ H (Helicon) 或感應耦合電漿（ICP，Inductively c〇upled piasma)，藉以 產士低此量的電漿。一電極係位於處理室，其以一射頻 偏壓波形(典型為13·56廳之射頻)而被獨立供電。如此 技藝所眾所週知，於該頻率’ 一負的自偏壓係產生於該電 且此將優先加速正離子至基板。對於蝕刻特徵係常見 為呈現电子蔭蔽(shading)效應’藉此係發生電荷分離，負 電充電於特徵之頂部而正電充電於特徵之底部。此電子路 16 1320947 蔽效應係可能成為較差於光罩應用。相信的是，電子备蔽 :應係歸因於基板之厚、絕緣性質(典型為一 6雌厚的石 央件)而變成較差。該種電荷分離現象係可能成為關連於光 罩=刻系統的現有技藝t CD敍刻線性度與cd姓刻偏移 之誤差的重大部分之原因。 藉著施加一低頻射頻偏壓波形至下方電極（基板支撐構 件）’而取代目前的高頻射頻偏壓，顯示的是充電效應係可 降低。本發明人已經發現的是’此亦具有改善cd钱刻偏 移與CD蝕刻線性度之效果。 本發明之一個實施例係顯示於第2圖。一電漿室 具有操作在2 MHz之一射頻產生器2〇5，其提供電力至一 線圏210以產生一電漿212。一低頻射頻偏壓產生器a。 係透過一阻抗匹配網路225而提供電力至下方電極22〇, 且—氣體入口 23 0係提供一處理氣體至室2〇〇，其為透過 一泵埠235而抽空。光蝕印基板24〇係由下方電極22〇所 支撐。 於此例’低頻射頻係定義為位於或低於離子變遷頻率 ’其描述為： wpi = (e2nc)/e CM)]/2，其中 ω pi -離子變遷頻率 e -於一電子之電荷 n0 -離子密度 £ 0 -於一真空之介電常數 M -離子之質量 17 針對運用於光罩製程之—種典型的高密度電聚 變遷頻率係約為2 MHz。 子 •十對本《B月為重要之應用的射頻偏塵參數係： • 0.03 MHz- 2MHz ； 2至2 〇 〇瓦特之施加的功率，·及 至1500伏特峰對♦值之發展的射頻電虔。 然而’於習用的光罩蝕刻劁 所施加的功率而射頻偏壓係藉著控制 A板主#广 工本案發月人已經發現的是：施加至 “支擇座之射頻電屡係更為密切決定製程性能。 本發明之另一個實施例係顯示於第3 — 遍具有操作在2 MHz之—射頻 電聚至 至一繞® 、 耵领屋生益305，其提供電力 315侍 以產生一電漿312。-低頻射頻偏壓產生器 係透過—阻抗匹配網路325而搞接至下方電極⑽ 產=極320之電壓係由電壓探測器335所測量。 產生=315之輸出係由一電壓控制器33〇所調節，控制器 知運'電壓探測器奶之輸出而作為其輸入。電廢控 二330係運用一閉路控制演算法以维持陰 ； :電壓。氣體入。340係提供一處理氣體至室 ^ 透過—料⑷而純印基&35()係由下方電= 320所支撐。 卜万電椏 如於第 4闰π - ^ 圖所不，备低頻射頻偏壓波形係作調變或為 、’本《明係作成更為重要一電㈣彻 2ΜΗΖ之-射頻產生器405,其…力至㈣有，作在 產生 仏供电力至一線圈410以 电跟川。—低頻射頻偏壓產生$ 415 18 1320947 抗匹配網路425而耦接至下方電極42〇，且一調變器43〇 係控制該射頻偏壓產生H 415而造成—調變後的輸^波形 。氣體入π 435係提供一處理氣體至室4〇〇，其為透過一 泵埠440而抽空。光蝕印基板445係由下方電極42〇所支 推。 如於第5圖所示，本發明之另一個實施例係運用電壓 控制之一調變或脈衝式的低頻射頻偏一雨 具有操作在2顧2之-射頻產生器奶，其提=力至 至-線圈51。以產生-電聚512。-低頻射頻偏壓產生器 515係透過一阻抗匹配網路525而耦接至下方電極52〇, 且-調變H 560係控制該射頻偏壓產生器515而造成一調 變後的輸出波形。此外，於下方電極52()《電壓係由電塵 探器535所測量。射頻產生器515之輸出係由_電㈣ 制5 3 0所調節，控制哭q Λ & ^ 剩盎530係運用電壓探測器535之輸 出而作為其輸入。電壓控難53G係運用一閉路控制演算 法以維持陰極電壓於—預定電壓。氣體人π 54〇係提供一 處理氣體至室，其為透過—料⑷而抽空。光敍印 基板550係由下方電極52〇所支撐。 第6圖係說明當產生一脈衝式射頻偏壓時之波形。由 -射頻產生器所產生的，_係藉著由一調變器所產 生的一脈衝㈣6〇5而修改，以產生-輸出波形㈣。輸 出波形610的特徵在於二個振幅…㈣。脈衝式的波 形二之工作週期係定義為於振幅615的持續期間⑶除 以脈衝週期630之比值。 19 1320947 波形係可藉著改變振幅、改變頻率、改變相位、或改 變形狀而調變。脈衝式（pu〗sing)係意謂著：施加至基板支 撐座之射頻偏壓係改變於包括一離散的“高，，狀態與“低 ”狀態之至少二個位準之間。“低，，狀態係可為：關： (off)”。此外，該波形輸出係可調變而非為脈衝式。調變係 意謂著：施加至基板支撐座之射頻偏壓係連續改變於至少 二個位準之間。頻率調變係意謂著：施加至基板支撐座之 射頻偏壓係以離散或連續式而改變於至少二個頻率之間。 針對本發明而視為重要之脈衝參數係： •於約為40微秒至數十毫秒之間的一脈衝週期丨及 •於約為5%與75%之間的一工作週期。 實例： 表1係說明運用本發明之種種實施例所得到的結果。 針對表1的資料之測試媒介者係寫入於正化學放大光阻之 具有約為50%曝光的鉻之一均勻分佈的圖案。該圖案係運 用電子束的蝕印術（50 KeV之電子束的圖案產生器）所寫入 〇 表1-行1 (板ID 1272)係藉著一高密度電漿光罩蝕刻 系統而電漿蝕刻。此電漿蝕刻系統係現有技藝之Unaxis Mask Etcher m，其運用一 13 56 MHz基板偏壓射頻產生 态，且產生低於15 nm、30之CD均勻度。於此現有技藝 光罩敍刻器，CD蚀刻偏移係33 nm且CD姓刻線性度係 11 nm。射頻偏壓功率係25瓦特（w)，其造成約為]伏 特（V)之一直流偏壓電壓。 20 1320947 表1-行2 (板.ID 1270)係展示藉著本發明之一個實施 例所蝕刻之相同的先進光罩型式，其中，射頻偏壓頻率係 降低至0_38 MHz (380 kHz)。利用標準系統架構（13 % MHz射頻偏壓）之33 1101的CD-刻偏移係降至2〇 nm。同 理，本發明亦產生自丨丨nm改良至丨之線性度。射 頻偏壓電壓係300 V。 表1-行3 (板ID 1772)係展示藉著本發明之另一個實 施例所触刻之相同的先進光罩圖帛，利用低頻（38〇叫脈 衝式射頻偏壓。低頻的射頻偏壓係脈衝為具有4〇%之一工 作週期與丨毫秒㈣之-脈衝週期。於高脈衝週期之射頻 ^壓電壓係設W V，而於低脈衝週期之射頻偏㈣ :係設定…(關斷(。ff))。運用此架構，cd偏移係測量 為20nm，且CD蝕刻線性度係測量為5ι^。In order to improve the linearity of the CD and the CD, the ionic charge is dissipated due to the development of the low-frequency bias. - _ ^ That is, the essay is a kind of improved device for money engraving and printing substrate ( λ hood or - first net) 'Pure printed substrate system can be such as quartz, Shi Xihua turned, Nitrous oxide sulphate, In combination with the optical transparent material 14: the device comprises the following: the soil board support member for fixing the photo-etching substrate is positioned in the vacuum chamber. Etching gas (such as ruthenium chloride, fluorine, oxygen or fluorocarbon) to the truth to etch a target material from the vacuum processing chamber to etch a target material. The target material to be silver engraved may be the silk screen substrate itself, a metal Layer or any other layer developed by Zuoguang's surname. The metal layer is composed of a combination of free roads, snails, snails, titanium, gasification cranes, Shi Xihua cranes, Shi Xihua turned, and... Group. Lightly connected to one of the basement members of the basement = at or below the ion transition frequency - modulating the radio-etching substrate of the radio frequency strictening chamber. The modulating RF bias power supply can be voltage controlled. The modulation of the dust can pass the pulse, change the amplitude of the two or change the frequency of the bias. The pulsed RF frequency is less than about 鄕 or as low as about 1〇% of the duty cycle. The radio frequency (4) frequency of (10) has less than about 1G milliseconds or about 5 milliseconds of one pulse = period. The modulated RF bias has a peak of less than about 〖5kv. Due to the result of the process of the present invention, the exposed target is replaced by an improved CD linearity and cdm offset. 'This is because the low frequency biasing system allows the development of the ionic charge generated by the plasma to the etched substrate to be dissipated. The foregoing has been (4) outlined in the summary of the present invention, whereby the following detailed description of the invention The system can be better understood, so that: the help of this technology can be more fully recognized and will be hostile to the following, which constitutes the second of the present invention =: special: 1320947 familiar with this technical person should be aware of Yes, the disclosed concepts and particular embodiments are readily available as a basis. The same objects are intended to be modified or designed in other structures. It is to be understood by those skilled in the art that the equivalents of the invention are not departing from the spirit and scope of the invention, as set forth in the appended claims. [Embodiment] The present invention provides a method and apparatus for fabricating a reticle that improves CD etch linearity and CD etch offset compared to the prior art. These improvements are transmitted through continuous waves or modulated. The low-frequency RF bias is applied during the plasma etching of the reticle and the optical network. The processing gas system for the surname reticle and the optical network depends on the material to be surnamed. For example, 'based on fluorinated and / or fluorocarbons are used for molybdenum etching, although other halogen-containing gases can be used. Plasmas containing gas and oxygen are typically used for plasma etching of thin films containing chromium. The mask etching system utilizes a high-density RF plasma source such as an electron cyclotron (ECR, E]ectr〇n Cyclotron Resonance) for processing various frequencies of the vacuum chamber > ϋ ^ H (Helicon) or inductive coupling Electricity (ICP, Inductively c〇upled piasma), whereby low midwife this amount of plasma. An electrode is located in the processing chamber and is independently powered by a radio frequency bias waveform (typically a radio frequency of Hall 13.56). As is well known in the art, a negative self-biasing at this frequency produces this electrical current and this will preferentially accelerate the positive ions to the substrate. It is common for an etched feature to exhibit an electronic shading effect whereby a charge separation occurs, negatively charged to the top of the feature and positively charged to the bottom of the feature. This electronic circuit 16 1320947 shielding effect system may become worse than the reticle application. It is believed that electronic masking should be poor due to the thick, insulating properties of the substrate (typically a 6-story stone member). This charge separation phenomenon may be a significant factor in the error of the prior art t CD characterization linearity and cd surname offset associated with the reticle=engraving system. By applying a low frequency RF bias waveform to the lower electrode (substrate support member)' instead of the current high frequency RF bias, it is shown that the charging effect can be reduced. The inventors have discovered that this also has the effect of improving the linearity of the cd and the linearity of the CD etch. One embodiment of the invention is shown in Figure 2. A plasma chamber has an RF generator 2〇5 operating at 2 MHz, which supplies power to a line 210 to produce a plasma 212. A low frequency RF bias generator a. Power is supplied to the lower electrode 22 through an impedance matching network 225, and the gas inlet 230 provides a process gas to the chamber 2, which is evacuated through a pump 235. The photo-etching substrate 24 is supported by the lower electrode 22A. In this case, the 'low frequency radio frequency system is defined as being at or below the ion transition frequency', which is described as: wpi = (e2nc) / e CM)] / 2, where ω pi - ion transition frequency e - the charge n0 of an electron - Ion Density £ 0 - Dielectric Constant of a Vacuum M - Ion Mass 17 A typical high density electropolymerization frequency system for the reticle process is approximately 2 MHz. • Ten pairs of radio frequency dust parameters for this important application in the month of B: • 0.03 MHz - 2 MHz; 2 to 2 施加 watts of applied power, · and RF power to 1500 volts to ♦ value development. However, the power applied by the conventional mask etch 而 and the RF bias is controlled by the A-board master. The person who has discovered the problem is that the RF power applied to the seat is more closely related. Determining process performance. Another embodiment of the present invention is shown in the 3rd pass having an operation at 2 MHz - RF power is concentrated to a winding®, 耵领屋生益305, which provides power 315 to generate an electricity Slurry 312. The low frequency RF bias generator is coupled to the lower electrode (10) through the impedance matching network 325. The voltage at the source 320 is measured by the voltage detector 335. The output of = 315 is controlled by a voltage. The controller 33 is adjusted, and the controller knows the output of the voltage detector milk as its input. The electric waste control system 330 uses a closed-loop control algorithm to maintain the yin; : voltage. gas in. 340 series provides a processing gas To the room ^ through the material (4) and the pure base & 35 () is supported by the lower electricity = 320. Bu Wan electric 桠 as in the fourth 闰 π - ^ map does not, prepare the low frequency RF bias waveform system Change or for, 'this "Ming system is more important, one electric (four) is full 2 The RF-generator 405, which has a force to (4), is generated to generate a power supply to a coil 410 to electrically follow. - The low frequency RF bias generates $415 18 1320947 anti-matching network 425 coupled to the lower side The electrode 42 is, and a modulator 43 is configured to control the RF bias to generate H 415 to cause a modulated waveform. The gas into the π 435 system provides a processing gas to the chamber 4, which is transmitted through a The pumping plate 440 is evacuated. The photo-etching substrate 445 is supported by the lower electrode 42. As shown in Fig. 5, another embodiment of the present invention uses a voltage-controlled one-modulation or pulsed low-frequency radio frequency. The partial rain has an operation on the RF generator milk, which raises the force to the coil 51 to generate the electro-convergence 512. The low-frequency RF bias generator 515 is transmitted through an impedance matching network 525. Coupling to the lower electrode 52A, and the modulation H 560 controls the RF bias generator 515 to cause a modulated output waveform. Further, the lower electrode 52() "voltage system is powered by the dust detector 535. The output of the RF generator 515 is adjusted by the _ electric (4) system 5 3 0 to control the crying q Λ & ^ The remaining 530 series uses the output of the voltage detector 535 as its input. The voltage control is difficult to use the 53G system to maintain the cathode voltage at a predetermined voltage. The gas π 54 system provides a processing gas to the chamber. The light-printing substrate 550 is supported by the lower electrode 52A. Figure 6 illustrates the waveform when a pulsed RF bias is generated. Generated by the -RF generator, _ It is modified by a pulse (four) 6 〇 5 generated by a modulator to produce an output waveform (4). The output waveform 610 is characterized by two amplitudes (4). The duty cycle of the pulsed waveform is defined as the ratio of the duration (3) of the amplitude 615 divided by the pulse period 630. 19 1320947 Waveforms can be modulated by changing amplitude, changing frequency, changing phase, or changing shape. Pulsed sing means that the RF bias applied to the substrate support is changed between at least two levels including a discrete "high" state and a "low" state. "Low, The state system can be: off: (off). In addition, the waveform output is adjustable rather than pulsed. Modulation means that the RF bias applied to the substrate support is continuously changed to at least two. Between the levels, the frequency modulation means that the RF bias applied to the substrate support is changed discretely or continuously between at least two frequencies. A pulse parameter system that is considered important for the present invention. • a pulse period between approximately 40 microseconds and tens of milliseconds and a duty cycle between approximately 5% and 75%. Examples: Table 1 illustrates various embodiments of the invention. The results obtained. The test media for the data of Table 1 were written in a pattern of uniform distribution of one of the chromium having a positive chemical amplification of about 50% exposure. The pattern was etched using electron beam (50 The pattern generator of the electron beam of KeV is written in Table 1 - Line 1 ( ID 1272) is plasma etched by a high density plasma reticle etching system. This plasma etch system is a prior art Unaxis Mask Etcher m that uses a 13 56 MHz substrate bias RF generation state and produces low CD uniformity at 15 nm, 30. In this prior art mask reticle, the CD etch offset is 33 nm and the CD linearity is 11 nm. The RF bias power is 25 watts (w), which results in A DC bias voltage of approximately one volt (V). 20 1320947 Tables 1 - 2 (Board. ID 1270) show the same advanced reticle pattern etched by one embodiment of the present invention, wherein RF The bias frequency is reduced to 0_38 MHz (380 kHz). The 33-101 CD-etch offset system using the standard system architecture (13% MHz RF bias) is reduced to 2 〇 nm. Similarly, the present invention also produces self-depreciation. The 丨nm is modified to linearity of 丨. The RF bias voltage is 300 V. Tables 1 - 3 (Board ID 1772) show the same advanced reticle pattern that is etched by another embodiment of the present invention, Use low frequency (38 squeak pulse RF bias. Low frequency RF bias system pulse is 4% Period and 丨 millisecond (four) - pulse period. The RF voltage is set to WV in the high pulse period, and the RF offset in the low pulse period (4) is set... (off (.ff)). Using this architecture, cd The offset system was measured to be 20 nm, and the CD etching linearity was measured to be 5 ι^.
“示内容包括於隨附的申 及則述說明者。雖然本發明係已 有者、以 定性夕&技 、述於具有某程度的特 之較佳形式，瞭解的是，較佳 特 為舉例’且構成的細節及零件的組合= 係僅 均可採取而未偏離本發明之精神與範疇。=夕又化係 【圆式簡單說明】 21 1^20947 (一） 圖式部分 第1圖係一種習用的高密度電漿室之示意圖； 第2圖係運用低頻射頻偏壓之本發明的較佳實施例之 示意圖； 第3圖係運用射頻偏壓電壓控制之本發明的一個實施 例之示意圖； 第4圖係運用調變低頻射頻偏壓之本發明的一個實施 例之示意圖； 第5圖係運用調變低頻射頻偏壓與射頻偏壓電壓控制 之本發明的一個實施例之示意圖；及 第6圖係關聯於第4圖之示意圖的波形圖。 類似的參考符號係指於不同圖式中的類似元件。 (二） 元件代表符號 100 :射頻產生器 105 :感應耦合式電漿線圈 1 1 〇 :射頻偏壓產生器 1 1 5 .電極 120 :阻抗匹配網路 1 3 0 :氣體入口 135 :電漿室 140 :泵埠 145 :光罩 200、300、400、500 :電漿室 205、305、405、505 :射頻產生器 22 1320947 210、310、410、510:線圈 212 、 312 、 412 、 512 :電漿 2 1 5、3 1 5、41 5、5 1 5 :低頻射頻偏壓產生器 220、320、420、520 :電極 225、325、425、525 :阻抗匹配網路 230、340、435、540 :氣體入口 235 ' 345、440、545 :泵埠 240、350、445、550 :光蝕印基板 330、530 :電壓控制器 335、535 :電壓探測器 430、560 :調變器 600 :波形 605 :脈衝波形 6 1 0 :輸出波形 615、620 :振幅 625 :於振幅615之持續期間 630 :脈衝週期 23"The content is included in the accompanying application and is described. Although the present invention is based on the prior art, and is described in a preferred form having a certain degree, it is understood that For example, the details of the composition and the combination of the parts can be taken without departing from the spirit and scope of the invention. = 夕又化系 [Circular Simple Description] 21 1^20947 (1) Figure 1 BRIEF DESCRIPTION OF THE DRAWINGS FIG. 2 is a schematic view of a preferred embodiment of the present invention using a low frequency radio frequency bias; and FIG. 3 is an embodiment of the present invention using radio frequency bias voltage control. 4 is a schematic diagram of one embodiment of the present invention utilizing a modulated low frequency radio frequency bias; FIG. 5 is a schematic diagram of one embodiment of the present invention using modulated low frequency radio frequency bias and radio frequency bias voltage control; And Figure 6 is a waveform diagram associated with the schematic diagram of Figure 4. Like reference numerals refer to like elements in different drawings. (2) Component Representation Symbol 100: RF Generator 105: Inductively Coupled Plasma Coil 1 1 : RF bias generator 1 1 5 . Electrode 120 : impedance matching network 1 3 0 : gas inlet 135 : plasma chamber 140 : pump 145 : reticle 200 , 300 , 400 , 500 : plasma chamber 205 , 305 , 405, 505: RF generator 22 1320947 210, 310, 410, 510: coils 212, 312, 412, 512: plasma 2 1 5, 3 1 5, 41 5, 5 1 5: low frequency RF bias generator 220, 320, 420, 520: electrodes 225, 325, 425, 525: impedance matching networks 230, 340, 435, 540: gas inlets 235 '345, 440, 545: pumps 240, 350, 445, 550: light Eclipse substrate 330, 530: voltage controller 335, 535: voltage detector 430, 560: modulator 600: waveform 605: pulse waveform 6 1 0: output waveform 615, 620: amplitude 625: duration of amplitude 615 630: Pulse period 23