TWI319891B - Polishing pad and method of manufacturing semiconductor devices - Google Patents

Polishing pad and method of manufacturing semiconductor devices

Info

Publication number
TWI319891B
TWI319891B TW093102620A TW93102620A TWI319891B TW I319891 B TWI319891 B TW I319891B TW 093102620 A TW093102620 A TW 093102620A TW 93102620 A TW93102620 A TW 93102620A TW I319891 B TWI319891 B TW I319891B
Authority
TW
Taiwan
Prior art keywords
semiconductor devices
polishing pad
manufacturing semiconductor
manufacturing
polishing
Prior art date
Application number
TW093102620A
Other languages
English (en)
Other versions
TW200428465A (en
Inventor
Gaku Minamihaba
Yoshikuni Tateyama
Hiroyuki Yano
Tomoo Komura
Kou Hasegawa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of TW200428465A publication Critical patent/TW200428465A/zh
Application granted granted Critical
Publication of TWI319891B publication Critical patent/TWI319891B/zh

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B60—VEHICLES IN GENERAL
    • B60H—ARRANGEMENTS OF HEATING, COOLING, VENTILATING OR OTHER AIR-TREATING DEVICES SPECIALLY ADAPTED FOR PASSENGER OR GOODS SPACES OF VEHICLES
    • B60H1/00—Heating, cooling or ventilating [HVAC] devices
    • B60H1/32—Cooling devices
    • B60H1/3204—Cooling devices using compression
    • B60H1/3225—Cooling devices using compression characterised by safety arrangements, e.g. compressor anti-seizure means or by signalling devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
    • B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
    • B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
    • B24D3/28—Resins or natural or synthetic macromolecular compounds
    • B24D3/32—Resins or natural or synthetic macromolecular compounds for porous or cellular structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
TW093102620A 2003-02-06 2004-02-05 Polishing pad and method of manufacturing semiconductor devices TWI319891B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003029560A JP3910921B2 (ja) 2003-02-06 2003-02-06 研磨布および半導体装置の製造方法

Publications (2)

Publication Number Publication Date
TW200428465A TW200428465A (en) 2004-12-16
TWI319891B true TWI319891B (en) 2010-01-21

Family

ID=32652996

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093102620A TWI319891B (en) 2003-02-06 2004-02-05 Polishing pad and method of manufacturing semiconductor devices

Country Status (7)

Country Link
US (1) US20050227489A1 (zh)
EP (1) EP1445067B1 (zh)
JP (1) JP3910921B2 (zh)
KR (1) KR100693961B1 (zh)
CN (1) CN100570826C (zh)
DE (1) DE602004002120T2 (zh)
TW (1) TWI319891B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI816375B (zh) * 2015-10-30 2023-09-21 美商應用材料股份有限公司 形成具有期望界達電位之拋光物件的設備與方法

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050266226A1 (en) * 2000-11-29 2005-12-01 Psiloquest Chemical mechanical polishing pad and method for selective metal and barrier polishing
JP2006114885A (ja) * 2004-09-17 2006-04-27 Jsr Corp 化学機械研磨パッド及び化学機械研磨方法
JP5347524B2 (ja) * 2008-01-24 2013-11-20 Ｊｓｒ株式会社 化学機械研磨パッドの研磨層形成用組成物、化学機械研磨パッドおよび化学機械研磨方法
US8177603B2 (en) * 2008-04-29 2012-05-15 Semiquest, Inc. Polishing pad composition
US20140370788A1 (en) * 2013-06-13 2014-12-18 Cabot Microelectronics Corporation Low surface roughness polishing pad
JP6434266B2 (ja) * 2013-12-17 2018-12-05 富士紡ホールディングス株式会社 ラッピング用樹脂定盤及びそれを用いたラッピング方法
WO2015153601A1 (en) 2014-04-03 2015-10-08 3M Innovative Properties Company Polishing pads and systems and methods of making and using the same
CN105313033A (zh) * 2014-08-05 2016-02-10 东莞金太阳研磨股份有限公司 一种弹性tpu抛光复合膜
CN109478507B (zh) * 2016-07-29 2023-01-10 株式会社可乐丽 抛光垫及使用了该抛光垫的抛光方法
EP3571009A4 (en) * 2017-01-20 2021-01-20 Applied Materials, Inc. THIN PLASTIC POLISHING ARTICLE FOR CMP APPLICATIONS
KR102174958B1 (ko) * 2019-03-27 2020-11-05 에스케이씨 주식회사 결함 발생을 최소화시키는 연마패드 및 이의 제조방법
CN111617305B (zh) * 2020-04-23 2021-05-11 杭州千芝雅卫生用品有限公司 一种亲肤性吸液材料的制备方法

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US78632A (en) * 1868-06-02 Improved brick-machine
MY114512A (en) * 1992-08-19 2002-11-30 Rodel Inc Polymeric substrate with polymeric microelements
US5976000A (en) * 1996-05-28 1999-11-02 Micron Technology, Inc. Polishing pad with incompressible, highly soluble particles for chemical-mechanical planarization of semiconductor wafers
US5702977A (en) * 1997-03-03 1997-12-30 Taiwan Semiconductor Manufacturing Company, Ltd. Shallow trench isolation method employing self-aligned and planarized trench fill dielectric layer
WO1998047662A1 (en) * 1997-04-18 1998-10-29 Cabot Corporation Polishing pad for a semiconductor substrate
US6337280B1 (en) * 1998-05-11 2002-01-08 Kabushiki Kaisha Toshiba Polishing cloth and method of manufacturing semiconductor device using the same
KR100615691B1 (ko) * 1998-12-18 2006-08-25 도소 가부시키가이샤 연마용 부재, 그것을 이용한 연마용 정반 및 연마방법
US6176763B1 (en) * 1999-02-04 2001-01-23 Micron Technology, Inc. Method and apparatus for uniformly planarizing a microelectronic substrate
JP2000349053A (ja) * 1999-06-07 2000-12-15 Asahi Chem Ind Co Ltd 溝付研磨パッド
WO2001045899A1 (fr) * 1999-12-22 2001-06-28 Toray Industries, Inc. Tampon a polir, procede et appareil de polissage
JP4615813B2 (ja) * 2000-05-27 2011-01-19 ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド 化学機械平坦化用の研磨パッド
JP3925041B2 (ja) * 2000-05-31 2007-06-06 Ｊｓｒ株式会社 研磨パッド用組成物及びこれを用いた研磨パッド
US6685537B1 (en) * 2000-06-05 2004-02-03 Speedfam-Ipec Corporation Polishing pad window for a chemical mechanical polishing tool
US6458013B1 (en) * 2000-07-31 2002-10-01 Asml Us, Inc. Method of chemical mechanical polishing
KR100738774B1 (ko) * 2000-08-28 2007-07-12 제이에스알 가부시끼가이샤 화학 기계 연마 스토퍼막, 그의 제조 방법 및 화학 기계연마 방법
US6477926B1 (en) * 2000-09-15 2002-11-12 Ppg Industries Ohio, Inc. Polishing pad
JP3826702B2 (ja) * 2000-10-24 2006-09-27 Ｊｓｒ株式会社 研磨パッド用組成物及びこれを用いた研磨パッド
JP2002126998A (ja) * 2000-10-26 2002-05-08 Hitachi Ltd 研磨方法および研磨装置
US20020098789A1 (en) * 2001-01-19 2002-07-25 Peter A. Burke Polishing pad and methods for improved pad surface and pad interior characteristics
US6667239B2 (en) * 2001-01-23 2003-12-23 Asml Us, Inc. Chemical mechanical polishing of copper-oxide damascene structures
US6663787B1 (en) * 2001-02-06 2003-12-16 Advanced Micro Devices, Inc. Use of ta/tan for preventing copper contamination of low-k dielectric layers
US6840843B2 (en) * 2001-03-01 2005-01-11 Cabot Microelectronics Corporation Method for manufacturing a polishing pad having a compressed translucent region
JP2002324772A (ja) * 2001-04-25 2002-11-08 Hitachi Ltd 半導体装置の製造方法及び製造装置
JP3934388B2 (ja) * 2001-10-18 2007-06-20 株式会社ルネサステクノロジ 半導体装置の製造方法及び製造装置
KR100845481B1 (ko) * 2001-11-13 2008-07-10 도요 고무 고교 가부시키가이샤 연마 패드 및 그 제조 방법
US6913517B2 (en) * 2002-05-23 2005-07-05 Cabot Microelectronics Corporation Microporous polishing pads
KR100584050B1 (ko) * 2002-08-26 2006-05-29 제이에스알 가부시끼가이샤 연마 패드용 조성물 및 이를 사용한 연마 패드
AU2003272674A1 (en) * 2002-09-25 2004-04-19 Ppg Industries Ohio, Inc. Polishing pad for planarization

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI816375B (zh) * 2015-10-30 2023-09-21 美商應用材料股份有限公司 形成具有期望界達電位之拋光物件的設備與方法
US11964359B2 (en) 2015-10-30 2024-04-23 Applied Materials, Inc. Apparatus and method of forming a polishing article that has a desired zeta potential

Also Published As

Publication number Publication date
JP2004241625A (ja) 2004-08-26
DE602004002120D1 (de) 2006-10-12
TW200428465A (en) 2004-12-16
EP1445067A3 (en) 2004-10-27
CN100570826C (zh) 2009-12-16
KR100693961B1 (ko) 2007-03-12
JP3910921B2 (ja) 2007-04-25
CN1519894A (zh) 2004-08-11
US20050227489A1 (en) 2005-10-13
EP1445067B1 (en) 2006-08-30
DE602004002120T2 (de) 2007-02-22
KR20040071640A (ko) 2004-08-12
EP1445067A2 (en) 2004-08-11

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