TWI316096B - Composition and method for enhancing pot life of hydrogen peroxide-containing cmp slurries - Google Patents

Composition and method for enhancing pot life of hydrogen peroxide-containing cmp slurries

Info

Publication number
TWI316096B
TWI316096B TW095136029A TW95136029A TWI316096B TW I316096 B TWI316096 B TW I316096B TW 095136029 A TW095136029 A TW 095136029A TW 95136029 A TW95136029 A TW 95136029A TW I316096 B TWI316096 B TW I316096B
Authority
TW
Taiwan
Prior art keywords
composition
hydrogen peroxide
pot life
cmp slurries
containing cmp
Prior art date
Application number
TW095136029A
Other languages
English (en)
Chinese (zh)
Other versions
TW200734487A (en
Inventor
Yuchun Wang
Bin Lu
John Parker
Roger Martin
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of TW200734487A publication Critical patent/TW200734487A/zh
Application granted granted Critical
Publication of TWI316096B publication Critical patent/TWI316096B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C23F3/06—Heavy metals with acidic solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW095136029A 2005-09-29 2006-09-28 Composition and method for enhancing pot life of hydrogen peroxide-containing cmp slurries TWI316096B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/238,236 US20070068901A1 (en) 2005-09-29 2005-09-29 Composition and method for enhancing pot life of hydrogen peroxide-containing CMP slurries

Publications (2)

Publication Number Publication Date
TW200734487A TW200734487A (en) 2007-09-16
TWI316096B true TWI316096B (en) 2009-10-21

Family

ID=37622044

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095136029A TWI316096B (en) 2005-09-29 2006-09-28 Composition and method for enhancing pot life of hydrogen peroxide-containing cmp slurries

Country Status (8)

Country Link
US (2) US20070068901A1 (enExample)
EP (1) EP1929071A1 (enExample)
JP (1) JP2009510773A (enExample)
KR (1) KR20080059609A (enExample)
CN (1) CN101316950B (enExample)
IL (1) IL190426A (enExample)
TW (1) TWI316096B (enExample)
WO (1) WO2007040956A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102834476B (zh) * 2009-11-06 2015-11-25 安集微电子（上海）有限公司 一种化学机械抛光液
WO2011097954A1 (zh) * 2010-02-11 2011-08-18 安集微电子（上海）有限公司 一种用于钨化学机械抛光方法
CN103409757B (zh) * 2013-08-26 2016-01-20 中核(天津)科技发展有限公司 一种环保型铜制品用化学抛光液及其制备方法
CN104451853B (zh) * 2014-11-06 2016-08-24 燕山大学 一种镍毛细管内表面的抛光方法
WO2019065994A1 (ja) * 2017-09-29 2019-04-04 株式会社フジミインコーポレーテッド 研磨用組成物
WO2020017894A1 (ko) 2018-07-20 2020-01-23 주식회사 동진쎄미켐 화학적 기계적 연마 조성물, 화학적 기계적 연마 슬러리 및 기판의 연마 방법
KR102808137B1 (ko) * 2018-07-20 2025-05-16 주식회사 동진쎄미켐 화학적 기계적 연마 조성물, 화학적 기계적 연마 슬러리 및 기판의 연마 방법

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8701759D0 (en) * 1987-01-27 1987-03-04 Laporte Industries Ltd Processing of semi-conductor materials
GB9326522D0 (en) * 1993-12-29 1994-03-02 Solvay Interox Ltd Process for stabilising particulate alkali metal percarbonate
KR19980019046A (ko) * 1996-08-29 1998-06-05 고사이 아키오 연마용 조성물 및 이의 용도(Abrasive composition and use of the same)
SG73683A1 (en) * 1998-11-24 2000-06-20 Texas Instruments Inc Stabilized slurry compositions
US6355075B1 (en) * 2000-02-11 2002-03-12 Fujimi Incorporated Polishing composition
US20040198584A1 (en) * 2003-04-02 2004-10-07 Saint-Gobain Ceramics & Plastic, Inc. Nanoporous ultrafine alpha-alumina powders and freeze drying process of preparing same
US7344988B2 (en) * 2003-10-27 2008-03-18 Dupont Air Products Nanomaterials Llc Alumina abrasive for chemical mechanical polishing
US20050090104A1 (en) * 2003-10-27 2005-04-28 Kai Yang Slurry compositions for chemical mechanical polishing of copper and barrier films
US7253111B2 (en) * 2004-04-21 2007-08-07 Rohm And Haas Electronic Materials Cmp Holding, Inc. Barrier polishing solution

Also Published As

Publication number Publication date
CN101316950A (zh) 2008-12-03
EP1929071A1 (en) 2008-06-11
CN101316950B (zh) 2011-08-24
KR20080059609A (ko) 2008-06-30
US20070068901A1 (en) 2007-03-29
TW200734487A (en) 2007-09-16
US20080132071A1 (en) 2008-06-05
IL190426A (en) 2012-12-31
IL190426A0 (en) 2008-11-03
WO2007040956A1 (en) 2007-04-12
JP2009510773A (ja) 2009-03-12

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees