TWI314800B - Heterostructure, injection laser, semiconductor amplifying element, and semiconductor optical amplifier - Google Patents

Description

1314800 IX. Description of the invention: [Technical field to which the invention pertains] The present invention relates to key components of quantum electronic engineering, that is, to heterogeneous structures based on semiconductor compounds and to semiconductor injection-type emission sources, particularly implanted thunder Related to radiation, semiconductor amplifying components, and semiconductor optical amplifiers. [Prior Art] A heterostructure represents a basic element for manufacturing an efficient, high power rate and small semiconductor injection source (hereinafter referred to as IES) in which the source has a very narrow far field pattern.

Heterostructures for semiconductor IES, leaky emission with narrow far-field patterns are found in [US Patent No. 4063189, 1977, International Classification H01S 3/19 331/94. 5], [Russian Patent No. 2142665, 1998 August, International Classification H01S3/19]. From the point of view of the resolved technical results, the heterogeneous structure of the example is proposed in [Russian Patent No. 2197049, V. I. Shveikin, February 18, 2002, ^ International Classification H01S 5/32] Based on a semiconductor compound and comprising at least one active layer (which consists of at least one sub-layer), at least one leak-in region on at least one side of the active layer (which is permeable to laser action), at least one of the leak-in regions 'It has at least one emission leak-in layer composed of at least one sub-layer. The heterostructure is characterized by the ratio of the effective refractive index neff of the heterostructure to the refractive index nIN of the leak-in layer. In this case, 'at least two reflective layers are additionally placed in the heterostructure', which has at least one on each side of the active layer; the reflective layer has a lower refractive index than neff 6 - 1314800 and forms at least one sub-layer. The leak-in area is located between the active layer and the corresponding reflective layer. Forming two additional layers in the leak-in region, that is, a localized layer of the leak-in region and an adjustment layer of the leak-in region, and a surface-draining region adjacent to the active layer forms at least one made of a semiconductor The sub-layer, the semiconductor has an energy gap exceeding the active layer energy gap, and the adjustment layer adjacent to the leakage region of the surface of the localized layer forms at least one sub-layer. Further, the leak-in layer is located in the leak-in area. The ratio of neff to n, N, is selected in the fe circle minus Δ to 丨 plus Δ, where the magnitude of Δ is much smaller than i. There are many important advantages to attacking a prototype heterostructure. The fabrication technique of this heterostructure is simplified; based on this IES operation with a heterostructure leaking into the emission, an emission output approximately perpendicular to the split optical face hole is obtained; the transmit power output is increased; the vertical plane is increased The size of the emission area, and correspondingly reduced angular divergence of the emission. At the same time, this heterogeneous structure limits the possibility of achieving high power and spatial characteristics of the IES manufactured on its basis. A semiconductor injection source having a leaky emission and having a narrow far field pattern - actually an implanted laser (hereinafter referred to as "injected laser,) is found in [US Patent No. 4,063,189, 1977, International Classification). H01S 3/19, 331/94· 5H], [Russian Patent No. 2142665, August 1, 1998, International Classification H01S 3/19]. From the perspective of the nature of technology and the technical achievements that have been solved, an example prototype injection mine is proposed in [Russian Patent No. 2197048, VI Shveikjn, February 18, 2002, National IV, Classification 7H01 S 5/3 2]. Shoot. The prototype implanted laser includes a semiconductor compound-based heterogeneous 7, 1314800 structure comprising at least one active layer (consisting of at least one sub-layer) and at least one emissive in-drain region (on at least one side of the active layer facing the laser) The effect is permeable. At least one of the leak-in regions has at least one sub-layer consisting of an emission leak-in layer. This heterostructure is characterized by the ratio of the effective refractive index neff of the heterostructure to the refractive index ηίΝ of the leak-in layer. In addition to the heterostructure, the original honey-injected laser also includes an optical surface, a reflector, an ohmic contact, and an optical resonator' wherein at least a portion of its medium is made of at least a portion of the leak-in region and at least a portion of the active layer. The

The heterostructure is additionally provided with at least two reflective layers, one / P - ~, one on each side; the reflective layer has a refractive index smaller than neff and forms at least one sub-layer, and the leak-in region is active Between the layers and the corresponding reflective layer. Two additional layers are placed in the leak-in region. First, a threshold layer is in the leak-in region adjacent to the surface of the active layer; the localized layer is composed of at least one sub-layer, which has an energy gap exceeding the active layer A semiconductor of the energy gap is formed; secondly, an adjustment in the leak-in region [which is adjacent to the surface of the even-limiting layer; the adjustment layer is composed of at least one sub-layer. Still further, the drain layer is located in the drain region, wherein at least a portion of the reflective layer acts as an additional medium for the optical resonator. Select the ratio of U niN in 1 minus △ and ..., where the magnitude of △ is much smaller than the prototype injection-type operation towel given the current exceeding the threshold value, and the laser is limited to the active layer. It consists of the composition of the heterostructure layer and the thickness of the layer, at least the value required to maintain the threshold value of the laser. The main advantage of the vertical-injected laser is the increase in the laser output power and the emission area in the vertical plane. The corresponding increase in the emission angle and the corresponding 8 1314800 reduces the simplification of the technique of manufacturing the injected laser and the realization that the emission output is approximately perpendicular to the hole of the split optical surface. At the same time, the prototype injection laser is limited to a low degree. The reach of the laser threshold current and the high efficiency and high power of the laser while having high spatial characteristics. The semiconductor injection source is actually a semiconductor amplifying element (hereinafter referred to as "SAE ") can be found in [Laser Focus World, September 2001, page 73_79].

From the point of view of the nature of technology and the technical achievements that have been solved, the prototype prototype SAE is proposed in [Russian Patent 2197047, V. I_ Shveikin, February 18, 2002, 7H01S5/32]. The SAE comprises a semiconductor compound-based heterostructure comprising at least one active layer (consisting of at least one sub-layer) and at least one emission leak-in region (at least on the side of the active layer and transparent to the laser effect) At least one of the leak-in areas, at least one of the emission leak-in layers (consisting of at least one sub-layer). This heterostructure is characterized by a heterostructure having a ratio of the effective refractive index neff to the refractive index niN of the leaked layer. In addition to the heterostructure structure, the prototype SAE also contains an optical surface, a reflector, an ohmic contact, and a clear film on at least one optical surface. In the operation of the 纟SAE, the propagation medium that amplifies the emission is at least a portion of the leak-in region and the knives of the active layer are additionally placed at least two reflective layers in the structure of the hemi-negative structure, at least in the active layer. - one side - the reflective layer has a refractive index smaller than ~ and constitutes at least _ sub-layers. The drain area is located between the active layer and the corresponding reflective layer. Two additional layers of *1314800 are placed in the leak-in area; that is, first, a localized layer adjacent to the leak-in region of the active layer surface, the localized layer consisting of at least one sub-layer, and A semiconductor having an energy gap exceeding the active layer energy gap; and - secondly, an adjustment layer in the leak-in region - which forms at least one sub-layer and is adjacent to the surface of the localized layer. Further, the leak-in layer is placed in the leak-in area. The ratio of neff to niN is selected in the range of 1 minus Δ to 1 plus Δ, where Δ is a value much smaller than 1. In terms of operation of the prototype SAE, the additional medium that amplifies the emission propagation is at least a portion of the reflective layer, and the amplified emission intensity confined in the active layer is defined by the composition and thickness of the heterostructure layer and the reflection coefficient of the clear film. It is chosen to be smaller than the self-excited current threshold density. The main advantages of the SAE prototype are its simplification of manufacturing techniques, approximately perpendicular emission output from the split optical surface, large inlet and exit apertures, reduced noise factor, reduced sensitivity to input main emission polarization, and Small launch divergence angle. At the same time, the prototype SAE has a lack of sensitivity to the input signal and some limitations on the size of the small signal amplification factor. A semiconductor injection type emitter - actually a semiconductor optical amplifier (hereinafter referred to as SOA) can be found in [IEEE Photonics Information, Vol. u, n., September 1999, pages 1099 to 1101]. From the point of view of the technical achievements that have been solved, [Russian Patent No. 2197〇47, V. L ShveUdn, February 18, 2002, International Classification 7h〇is 5/32] presents an example prototype semi-conducting prototype including a The input-emission optical coupling main source and the SAE prototype proposed by 10'1314800 in [Russian 2197〇47: Patent, V·L Shmkin, February 18, 2002, International Classification 7h〇is5/32] and the above description content. The main advantages of the prototype SOA are the simplification of the manufacturing technique, the approximately perpendicular emission output from the split optical surface, the change in the emission profile in the near and far fields, and the improvement in temperature dependence of the output parameters. While having high-emission characteristics, the prototype s〇A has some limitations on the input transmit amplification factor value and some limitations on the output amplification power value. SUMMARY OF THE INVENTION The technical effect of the heterostructure proposed by the present invention is that the characteristics of the semiconductor injection source are improved on the basis of its manufacture, that is, the improvement of their power and inter-work characteristics; especially high power, high efficiency, Highly reliable source (including single frequency and single mode) with improved frequency, speed, spectral and spatial characteristics, reduced optical loss, small emission divergence angle, improved transmit power temperature dependence, Reduced emission nonlinearity and reduced ohmic and thermal impedance, reduced mechanical stress levels, and increased operational resources, combined with advancement and simplification of heterostructure manufacturing techniques. / / In the proposed heterostructure, the technical effect of the proposed semiconductor injection source (injected laser on the helium) is the improvement of the characteristics of the semiconductor injection source when it is manufactured, that is, , its power and space characteristics improve; especially high-power, high-efficiency and high-reliability transmission sources (including single-frequency and single-mode), with improved frequency speed, spectral and spatial characteristics, reduced light Loss, small emission divergence angle, improved transmit power temperature dependence, reduced emissions, non-11 T314800 linearity deviation, and reduced ohmic and thermal resistance, reduced mechanical stress levels, and increased operating sources, while supporting the source Further simplification of manufacturing technology. Based on the proposed heterostructure, the technical effect of the proposed semiconductor injection source (semiconductor amplifying element) is the improvement of the characteristics of the semiconductor injection source when it is manufactured, that is, its work f and the improvement of the characteristics of the space; in particular, the production of high-power, high-efficiency and 6-degree reliable sources (including single-frequency and single-mode), with improved frequency, speed, spectral and spatial characteristics, reduced optical loss, Smaller emission divergence angle, improved transmit power temperature dependence, reduced emission nonlinearity, and reduced ohmic and thermal resistance, reduced mechanical stress levels, and increased operational resources, coupled with further development of the emitter manufacturing technology simplify. Based on the proposed heterostructure, the technical effect of the proposed semiconductor injection source (actually a semiconductor optical amplifying element) is that the semiconductor injection source is improved in its manufacture on the basis of its structure, that is, its Improvements in power and spatial characteristics; in particular, high-power, high-efficiency, and highly reliable sources (including single-frequency and single-mode) with improved frequency, speed, spectral and spatial characteristics, reduced optical loss, and small Emission divergence angle, improved transmit power temperature dependence, reduced emission non-linearity, linear hemiplegia, & reduced ohms and thermal impedance, reduced mechanical stress levels, and increased operating sources, combined with source fabrication Further technical simplification. One aspect of the present invention is a semiconductor compound-based heterojunction 12 1314800 / which is characterized by the ratio of the effective refractive index of the heterostructure to the leakage index of the leaked layer: 1 ,, that is, the ratio of neff to nIN is from 1 plus Δ The selection is made in the range of △ minus Δ, where Δ is a value much smaller than one. The structure comprises: at least one active layer; at least two reflective layers to each side of the active layer; to v > between the active layer and the corresponding reflective layer (solid emission leak-in region, which is emitted Permeable; and to a localized layer in the leak-in region, which is composed of at least one sub-layer, the leak-in which the emission leak-in layer has a refractive index niN and constitutes at least one sub-layer, The reflective layer is composed of at least one sub-layer and has a refractive index of a different refractive index neff of the different shells and 纟σ. In this case, the main regulating layer is additionally introduced into the leak-in area, the main regulating layer is At least one sub-layer is composed, and the refractive index of at least one sub-layer is not less than the refractive index nIN of the leak-in layer, and one surface thereof is opposite to the active layer. There is one confinement layer on the opposite side of the main adjustment layer, The localized layer has a refractive index smaller than the refractive index of the main conditioning layer. The proposed heterostructure (hereinafter referred to as HS) is characterized by the originality and non-obviousness of the thin layer containing the leak-in region. Their functional purpose, their configuration in the leak zone, their composition, and thickness. The position of the active and regulated layers and the location of the restricted layer in the leaked area have changed. The active layer in the proposed HS does not contain sub- The layer may be at least one active layer. When the active layer is formed, it is additionally introduced into the main buffer layer of the leak-in region - the edge layer is adjacent to the active layer, and the localized layer of the leak-in region and the main adjustment layer The other side is adjacent. The semiconductor injection source based on the proposed heterostructure (hereinafter referred to as 13 • 1314800 is IES), this occurs in the transient program that leaks from the active layer, and leaks into the leak. The zone enters a portion of the reflective layer near the leak-in zone. The leaky treatment of the proposed HS胄 is composed of its thin layer and thickness, and it is refracted by the effective refractive index neff of the heterostructure. The coefficient ηίΝ @ ratio is controlled by ^. The transition point in the king of the leak is & the ratio of nIN is equal to 丨.0. In the current operating range, the ratio is subtracted from 1 plus Δ to ! △ Within the range, where △ is large and the force is 0.01', that is, the ratio of neff to niN is in the range from i 〇1 to 〇99. Note that the ratio in the operating element varies with the current flowing through the HS. Increase and decrease. Under the selected neff vs. nIN ratio and the given current density through the IES, the efficiency of the IES depends on the final emission amplification value in the active layer to a certain extent. It is understood by the final amplification that the last The emission amplification avoids the emission resonance loss in the active layer and the optical loss in the Hs layer. As shown by the calculation and confirmed by the experimental data, the final amplification in the active layer is dominated by the main adjustment layer (or their sub- The position of the layer) is precisely achieved and the choice of its thickness and refractive index is achieved. Therefore, it is necessary to additionally introduce the main adjustment layer into the HS not only to control the ratio of the niN pairs, but also to make the power and spatial characteristics of the IES Substantial improvement is possible. In a preferred embodiment for increasing the final transmit amplification of the active layer and improving the 1ES power characteristics, the HS includes at least two active layers with a primary central adjustment layer between them, which is comprised of at least one sub-layer and has Not less than the refractive index of the leak-in layer refractive index nIN. 14 1314800 Special level to push the mix. There may be a leaky area on the side of the active layer. Depending on the number of leaking or leaking layers and the location, two main W HSs can be fabricated: symmetric HS and asymmetric hs. In a symmetric HS, the leak-in regions are located on each side of the active layer, and most have a refractive index equal to the associated layer and an equal thickness. In the non-pair (four) HS, ΰΓ I, 乂 乂 m, . . . , „ 侧 大 大 大 大 大 大 大 大 大 大 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳At least one sub-layer in the leak-in layer of the leak-in region has the same or close composition as the substrate. The heterostructure is placed on the substrate. In other words, the composition of the semiconductor substrate (or the refractive index) is selected. The composition of the same or close leaky layer (or refractive index) is possible 'it is permeable to the emission. _ None. s substrate binary semiconductor compound (eg gallium arsenide, indium filled) , gallium nitride, gallium nitride), and the thickness of the leak-in layer is usually the majority of the thickness of all the HS layers. Then the compressive mechanical stress in the HS will be greatly reduced, and the ohmic and thermal impedance will also be reduced, which will result in efficiency. Increase in output power and increase in operational life of the HS and IES reliability. In the same current flowing through the IES, in order to increase the output power of about 2, 3 or more L, the #Hs contains at least two active Is, a few holes / flat with each other, and at A two-layer thin P-type and n-type heavily doped sub-layer is placed between the short central-level adjustment layers to provide a current tunneling path for the active layer to the other active layer in the IES operation. The new and non-obvious HS essence proposed in this article 16 1314800 is here. The originality and non-obviousness of the thin layer including the leaking area, its purpose, the location in the leaking area, their composition And thickness. In: propose to change the composition of the leaking area, that is, to introduce the main adjustment layer, the position and connection of the thin layer in the leaked area, to form the active layer without any sub-layer' and to select (Determining and selecting the combination and composition of the yang layer. People all 1! Some characteristics make the best group of the main characteristics of the two hs

Synthesis is possible, that is, when the optimal transmit power of #(10) and the final amplification value of the null 11 4 ' active layer and the ratio of neff to nIN are obtained, the synthesis is possible. In the present invention, the & HS & technology implementation is based on the known basic technology. The basic technical program is currently well developed and widely used. This proposed solution satisfies the criteria of "industrial use". The 胄HS卩 and all of its features described above in the present invention are included in IES, which are key active components of quantum electronic engineering, injection lasers, semiconductor amplifying elements, and semiconductor optical amplifiers. A point of view of the local Ming is the semiconductor injection source, which is actually a laser (hereinafter referred to as laser), including an effective refractive system based on the heterogeneous structure of the semiconductor compound. The ratio of the number of leaking layers to the refractive index 'that is, the ratio of ~ to nIN is selected from the range from i minus Δ to 1 plus Δ, where Δ is a value much smaller than i; the different shell structure contains: At least one active layer; i less two reflective layers, on the side... a reflective layer; located in the active layer and corresponding anti-asn-emitter m which is transparent to the emission; at 17 1314800 and at least in the leak-in region - a limiting layer comprising at least one sub-layer; the reflective layer consisting of at least one sub-layer and having a refractive index smaller than an effective refractive index neff of the heterostructure; the above-mentioned leakage-in region includes to + one emission leak-in layer It has a refractive index of niN and consists of at least one sub-layer, and. The laser also includes an optical surface, a reflector, an ohmic contact, and an optical vibrator, wherein at least a portion of its medium consists of at least a portion of the leak-in region, at least a portion of the active layer, and at least a portion of the reflective layer. Manufacturing. The reflection coefficient of the reflector of the optical damper and the composition and thickness of the heterogeneous layer are selected such that during laser operation the active final emission is sufficient to maintain the laser threshold in the entire operating current range. In this case, additionally, a main adjustment layer is introduced into the leak-in region; the main adjustment layer is composed of at least one sub-layer, and there is:: the refractive index of the leakage coefficient niN of the leak-in layer is used for at least - The /, = its surface is adjacent to the active layer, the opposite side of the main adjustment layer and the drain: the other side of the localized layer adjacent to it has a refractive index smaller than the main modulation coefficient. In the laser s fold eff you are in the range of the 槛 threshold current, the ratio 1 minus "" plus r in the size range: ', r size is a smaller number than △. The main characteristics of the non-obvious lasers include the creation of new layers that are not based on them, and the generation of lasers. In the case of the court, the main adjustment layer is smashed into S and Changed the leakage introduced into the layer position of the leaked U. In the proposed HS, the main @ layer does not contain sub-layers and can have at least one active active layer, additionally in the temperature input | 2| One introduces a main adjustment layer in the leak-in area, one of which is adjacent to the active layer, and the other side of the main adjustment layer and the two-layer phase in the leak-in area are based on the proposed laser function of the heterostructure. The transient program near the emission occurs from the active layer, and it leaks into the leakage area. Here we have achieved the technical effect of the foregoing invention. The excessive leakage of a certain current value may cause vibration. Disappeared. In order to avoid this problem, optical additions cry + c & '' ^ The reflection coefficient of the reflector of the eucalyptus and the thickness of the Hs layer and the thickness of the reflector + inflammation. ^ _ The choice is: the final amplification of the emission in the active layer during the operation of the laser is sufficient Dimensions 4* Μ. /ΐϊΐ 4® ik- ,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, The decision is made by the ratio of the late red effective refractive index If of the heterostructure to the refractive index of the leaked layer. The transition point of the leaking procedure is in the case of neff versus niN. In the operating range of the current, 1 plus ^ △ to, J 1 minus the size of △ 笳 Φ, Deng ^ ^, a milk θ j (four) select this (four), where the size of Δ is large -,, spoon 疋〇 〇 1. Note in the operating elements The current increases and decreases. The ratio of eff to nIN flows through Hs. In order to get the laser's low laser action, the threshold current ~ the ratio should be from a ratio from Λ ,, m to the 〇.99 range. Choose from a small range. In the starting (threshold) current range, the ratio of 皇 1 皇 to niN is on both sides of 1 Select nearby, that is, λ r 甘 a acupoint J minus 1 from r to 1 minus the target range of γ, where the ratio of the size ratio Δ 7 . ^ . is about 0.005. In the selected neff pair In the nm ratio, the laser strike threshold current of a private laser with a small amount of laser emission is the final amplification value of the snow shot & ^ ~ 3 command, such as the juice nose of the proposed laser and The choice of the thickness of the test number and the main value of Γ厗~, as long as the transmission position and the refractive index of the layer to be 5 weeks are selected from the range of 19 1314800 攸1.005 to 〇·995 of ηίΝ, the laser effect can be obtained. The minimum value of the gate value current. Therefore, the special arrangement of the forks and the additional introduction to the proposed HS's main adjustment layer 'is not only necessary to control the ratio of ηΙΝ, but also makes it possible to solve the initial technical problem. First, basically improve The laser's "parameters (threshold current, efficiency, output power) and spatial characteristics (in the near-field emission distribution, the far-field emission angle divergence ρ in the preferred embodiment of reducing the laser threshold current), There is the above HS (four) shot, which comprises at least two active layers and between them, there is a main central adjustment layer 'the central adjustment layer consists of at least one sub-layer and has a refractive index not less than the refractive index of the leak-in layer. In the case of lasers, there is some limitation to the increase in the thickness of the main conditioning layer. Preferably, the 'auxiliary adjustment layer is combined with the main adjustment layer and introduced into the drain region and the auxiliary adjustment layer is adjacent to the surface of the confinement layer. The sub-layer is formed and has a refractive index not less than and greater than the leakage layer refractive index η ΙΝ. In order to provide high power parameters of the laser and space The main adjustment layer, the main central adjustment layer, and the auxiliary adjustment layer are made of a refractive index not less than the leakage layer refractive yarn η1Ν, and the thickness of the adjustment layer is from about 0.005 micrometers to about u micrometers and more. In order to obtain effective limits of electrons and holes in the active layer, and thus improve temperature dependence and increase the efficiency of laser action, the thickness of the barrier layer is selected from the range of about 0.01 micron to about 〇3〇 micron. In order to reduce the emission angle divergence in the vertical plane and increase the efficiency of the laser 20 1314800, the thickness of the leakage layer in the leakage area is from ίο and this "丄Α υ υ 米 到 约 约 约 约 约 约 约 约In addition, at least one of the layers of the anti-layer suspension cup layer is adjacent to the leak-in layer, which is manufactured by means of a coefficient. The refractive index of the layer is determined by the technical procedure of the inter-layer manufacturing. The laser-less-leak-in layer has a calculation of the laser efficiency, which defines the laser efficiency. In the preferred embodiment, the main adjustment layer, the main medium Tune: the prophet consumes), the auxiliary adjustment layer (if any, if at least - and Μ if there is), the leakage layer and a portion of the reflective layer adjacent to the leakage layer are doped at a low level. The level 1 suitable doping impurity is from about 1015 ..., there; the lining to the 3x10 丨 7 compartment half -3 偈 limited layer is from about 1 〇 17 cm _ 3 to 3 χΐ〇 1 ' impurity impurity level Doping. The proper doping of the mouth depends on the leakage zone (or the main band of the two types of holes that are created by the leakage layer. The number and location of the _ can be used to make the main field of Tan. A symmetrical laser and in symmetry In the laser, the leakage into the location is (4) special 1^\ shot. It has the same refractive index as the associated layer and the equal thick sound. In the laser, the leakage area is “one, Α in & Type the side of the mix. In the preferred embodiment of the active layer, at least one sub-layer of the incoming layer has a leak of -, a region on which a heterostructure is placed. Close group selection - the composition of the leaking layer (or the refractive system..., the composition of the semiconductor substrate (or the refractive index) is the same or close to the) can be 21! 3148 〇〇 month b's Penetrating. Generally, the substrate is a binary semiconductor compound (for example, Shishen Chemical, Indium Phosphide, Gallium Nitride, Gallium Antimonide), and the thickness of the leak-in layer is usually a large part of the thickness of the HS layer. In this case, the stress level of the pressure & mechanical, the ohmic and the thermal impedance are greatly reduced, which results in an increase in the efficiency of the proposed laser, an increase in output power, and an increase in operational life and reliability. In the same operating current, in order to increase the output power by about 2, 3 times and more, in the proposed laser, the HS contains at least two active layers whose holes are parallel to each other and a central portion is placed between them. The main ° segment layer is composed of two thin P-type and η-type heavily doped sublayers, and the heavily doped sublayer provides current tunneling from one active layer to the other in laser operation. aisle.

In a preferred embodiment of the proposed laser, the confinement emission regions are located on either side of the current stripe region, and at least one particular distance away from the two lateral sides of the stripe region, the depth is deepened to a specific depth, when those confined regions When the refractive index is less than the refractive index of the heterostructure leakage layer, the depth exceeds the depth of the active layer position. It should be noted that in the proposed laser, the nonlinear distortion caused by the spatial instability of the laser beam and the power injection laser output power is greatly reduced [Ρ·G. Eliseev, Yu. Μ· ρ〇 Ρ〇ν, 灿削如,24,Ν〇. 12(1997),1〇67_1〇79]. This is because in the proposed laser, most of the flux of the laser action (about 99 99%) propagates through the transparent leak-in layer (-linear medium), and the small portion of the flux 22 * 1314800 (about 0. G1% and less) is propagated through a nonlinear active medium f. This determines high output power, including single-frequency laser and spectral line width reduction, frequency drift reduction, laser-induced high frequency and high-speed modulation characteristics, which are very common in modern fiber optic connections and other applications. The actual nature. The substance of the non-obvious laser proposed by the present invention includes the originality and non-obviousness of the Hs leakage zone and other layers, and the laser rooting

: This is made, and their thickness and composition are also like & In this month, the main adjustment layer originally placed adjacent to the surface of the active layer (excluding the sub-layer) is additionally introduced into the leak-in area, and the proposed main and auxiliary adjustment layers, localized layers, leaking layers, and their children are proposed. The layers 'reflective layers and other original properties of their sub-layers (position, composition, thickness, doping level) make it possible to achieve the best combination of the two main characteristics via the appropriate selection of the thickness and composition of the # HS layer' The main characteristic is that the final amplification in the active layer and the U-to-nIN ratio in the initial (doorcast value) current range achieve the optimal power and spatial characteristics of the laser. The laser technology implementation proposed by the present invention is based on known basic technical procedures, and 4 basic technical procedures are currently well developed and widely used. The proposed solution of the present invention satisfies the criteria of industrial applicability. One aspect of the present invention is a semiconductor injection-type emission source, which is actually a semi-body-amplified TL device (hereinafter referred to as SAE), which includes a semiconductor-based device, which is characterized by a heterostructure. The ratio of the effective refractive index to the leak-in layer refractive index nIN, that is, the ratio of η to η, is selected in the range of i plus Δ and i minus Δ, where Δ is much smaller than the work 23 1314800

#值; the heterostructure comprises: at least one active layer; at least two reflective layers, at least one on each side of the active layer; at least one emission leaking region between the active layer and the corresponding reflective layer, the pair The emission is wearable; and at least one localized layer in the leak-in region, which is composed of at least one sub-layer; the reflective layer is composed of at least one sub-layer and has a refractive index smaller than a refractive index of the heterostructure effective refractive index neff The m region includes at least one emission leak-in layer having a refractive index nIN and is composed of at least one sub-layer. The SAE also includes an optical face, an ohmic contact, and at least one clear film on at least one optical face. The clear reflection coefficient on the optical surface and the composition and thickness of the heterostructure layer are selected such that the final amplification value of the emission at the active layer does not exceed the amplification value over the entire range of operating currents, which results in operating the semiconductor Self-excitation of the amplifying element 'where the propagation medium that amplifies the emission is at least a portion of the leak-in region, at least a portion of the active layer, and at least a portion of the reflective layer adjacent the leak-in layer. In this case, the main conditioning layer is additionally introduced into the leakage-in region; the primary conditioning layer is composed of at least one sub-layer and has at least one sub-layer having a refractive index not less than the refractive index niN of the leak-in layer, and it Adjacent to the surface of the active layer, the confinement layer on the reverse side of the main conditioning layer has a refractive index smaller than the refractive index of the conditioning layer. The main characteristics of the proposed SAE are the creation of original and non-obvious leak-in areas and other active layers of HS (their thickness and composition) - based on these manufacturing SAEs. In this case, the main adjustment layer is introduced into the leak-in area, and the position of the thin layer in the leak-in area is also changed. The active layer in the proposed HS does not contain sublayers and can be at least a single active layer. When 24 * 1314800 enters the leak-in region, the other of the main conditioning layers forms an active layer, additionally with the main regulating layer leading edge adjacent to the active layer, and the confined layer of the leaking region adjacent to the edge. Based on the proposed HS, the SAE function is generated in the emission leakage, and the leakage is from the active layer and leaks into the leakage area. Therefore, we have achieved the aforementioned technical results. The composition of the layer and the thickness of the neff to the ratio of the refractive index of the leaked layer neff to nIN

The leaking procedure in the SAE is controlled by the HS sense and by the ratio of the effective refractive index number A of the heterostructure. It is in the range of about 1.01 to about 0.99 in the operating current field. The sensitivity of the SAE to the input signal as well as the noise level, amplification factor, and the output power at a given operating current and at the selected ratio of neff to nm are dependent on the final amplified emission value within the active layer. As shown by the juice calculation of the proposed SAE, it is exactly selected by the position of the main adjustment layer (or its sub-layer) and the thickness and refractive index! In the ratio of !1>4 to neff, the maximum value of this final amplification can be achieved in a certain operating current. Therefore, the introduction of the original primary adjustment layer into the proposed HS can make the solution of the technical problem possible, that is, substantially improve the main parameters of the SAE: input signal, noise level, amplification factor, rounding The sensitivity of the power, as well as increasing the aperture size of the inlet and outlet, reducing the sensitivity of the polarization and the divergence of the emission angle at the far field. In order to stabilize the amplification mode of the SAE, the reflection coefficient of the clear film on the optical surface and the composition and thickness of the heterostructure layer can be selected such that when an operating current does not exceed the amplification value, the final emission amplification in the active layer is 25 Ϊ 314800 value 'causes self-excitation of operating semiconductor amplifying elements. In a preferred implementation (1) of increasing input signal sensitivity and 叹 〜 加 plus amplification factor, an original SAE is proposed, which is based on the above Hs and contains at least two active layers 'and has a major central adjustment between them A layer, which is at least one sub-layer and has a refractive index of not less than the refractive index of the drain layer. For some SAEs, because (4) _ _ % (4) = thickness increase limit, it is preferable to introduce the auxiliary tuned layer into the leak-in region along with the main adjustment layer and adjacent to the surface of the localized layer to form at least one sub-layer and have One is not less than and more than the leakage coefficient of the leaking layer. In order to optimize the main parameters of the SAE, the primary conditioning layer, the primary central conditioning layer, and the auxiliary conditioning layer are fabricated from a refractive index that is not less than the refractive index niN of the leak-in layer, and the thickness of the conditioning layer is from about 0.005 micron to Choose within about four microns and larger (four). To improve the temperature dependence of the SAE parameters, the localized layer is fabricated from a thickness selected from the range of from about 0.01 microns to about 0.30 microns. In order to reduce the noise figure and reduce the divergence emission angle divergence of the SAE, the drain layer of the leak-in region is selected within a thickness range from about U micron to about Μ micron and larger, and at least one sub-layer of the reflective layer is located in the drain Near the entrance layer, it is made by a refractive index close to the refractive index of the drain layer. In order to simplify the manufacturing process, in some embodiments, at least one of the leak-in layers of the leak-in region is made of the same refractive index as the refractive index of the uncover layer. Optical loss defines the SAE efficiency 'in the 26 1314800 best 1" in the example used to reduce the internal light loss. The main adjustment is to adjust the layer, the main central adjustment layer (if any), the auxiliary layer (if Some 忐), the leak-in layer, and a portion of the y-reflective layer adjacent to the leak-in layer. μ *·* 7 ^ low level, about 10 from 1015 cm -3 to 3 & σ The doping impurities are doped, and the confined layer is doped with # impurity impurities of about 0 cm to 3 x 10 〇 i8 m. Depending on the number and location of the leakage zone, the two major ς A F non-丄 λ , Ε symmetrical SAE and asymmetric SAE can be fabricated. In the right

The leaked area in the called SAE is placed on each side of the active layer, and a large portion has the same refractive index and equal thickness as the associated layer. In the asymmetric SAE, it is possible to have a leak-in region on one side of the active layer, and a large portion on the side of the n-type doping. In a preferred embodiment of the proposed SAE, at least one of the sub-layers of the leak-in layer in the leakage region of the particular wavelength has a composition that is the same as the substrate or (iv) a substrate on which the heterostructure is placed. In other words, it is possible to select a leak-in layer that is the same or close to the composition of the semiconductor substrate (or the refractive index of the germanium), which is permeable to the emission. Since the substrate is generally a binary semiconductor compound (such as gallium arsenide, indium phosphide, gallium nitride, gallium antimonide), and the thickness of the leak-in layer is usually made to a majority of the thickness of all HS layers, so that a large amount of Reducing the compression mechanical stress, the reduction, and the thermal impedance increase efficiency, increase output power and operating life, and the reliability of the proposed SaE. In the same operating current, in order to increase the amplified emission output power by about 2, 3 times and more times, in the proposed SAE, the HS contains at least 27 • 1314800 two active layers whose holes are parallel to each other' and in them The main central adjustment layer is sandwiched between two thin heavily doped and n_type sublayers, which enhances the current tunneling path from one active layer to the other active layer when operating SAE. In a preferred embodiment of the proposed SAE, the confined emission regions on either side of the fringe region of the current, at least at a particular distance from the lateral sides of the stripe region, are deepened to a particular depth that exceeds the active layer location. Depth, and the refractive index of the confined region is smaller than the refractive index of the leaky layer of the heterostructure. To obtain the polarization insensitivity of the SAE, the thickness of the leak-in layer in the leak-in region is approximately equal to the stripe (or convex stripe). The width of the area is manufactured. In the proposed SAE, if the current stripe area is made to a suitable tilt angle for the optical face, additional requirements for clear film can be reduced. For the individual embodiments of the proposed SAE, the inlet and outlet apertures are formed in a manner consistent with the fiber aperture. In this case, in order to input the input k and to amplify the emission, the reverse side of the SAE optical surface (on which the clear film is applied)' is optically coupled not only to the optical fiber but also to the optical fiber. Reducing the input loss of the input emissions reduces the SAE noise figure. The new, non-obvious SAE substance proposed in the present invention is essentially the originality and non-obviousness of the leak-in area and the other thin layers of the HS, their thickness and composition. In this case, the additional primary conditioning layer originally placed in the leak-in area is introduced into the leak-in area in the immediate vicinity of the active layer, and the primary and secondary conditioning layers, the 28^314800 barrier layer, the leak-in layer and Other original characteristics (position, composition, thickness, doping level) of the sub-layer, the reflective layer and its sub-layers make it possible to greatly improve the main characteristics of the SAE, in particular - increase sensitivity, efficiency, output to the input signal Power, reduced angular divergence of amplified emissions, reduced emission loss at the input and turn-off, reduced noise levels, increased operational life and reliability while simplifying alignment techniques. The technical implementation of the SAE proposed by the present invention is based on known basic technical procedures. The basic technical program is currently well developed and widely used. The proposed solution of the present invention satisfies the criteria of "industrial utilization." A further aspect of the present invention is to provide a semiconductor implanted emission source, actually a semiconductor optical amplifier (hereinafter referred to as s〇A), which includes an optically coupled main source of input and a semiconductor amplifying element, which are based on a semiconductor compound. The heterostructure structure is characterized by the ratio of the effective refractive index neff of the heterostructure to the refractive index of the leaked layer, that is, the ratio of ^ to ^ is selected from the range of I plus Δ to i minus Δ, where: N is much smaller than the value of -; the heterostructure comprises: at least one active layer; at least two reflective layers, i having less than one per side of the active layer; at least one emitting and leaking region 'which is transparent to the emission , the missing area is located between the active layer and the phase difference layer and/or at least one limitation in the leaked area; it is composed of at least one sub-layer; the anti-mesh, μ, ^ sub-layers and have one a refractive index smaller than the effective refractive index % A ^ ^ , , and eff of the heterostructure; the leakage & includes at least one emission drain layer, and has at least one of the sub-r曰# having a refractive index nIN Layer and to ,,. The SQA (4) is a clear film from the face, ohmic contact, and at least in the light of the light. The reflection coefficient of the β-clear film on the optical surface 29 1314800 and the composition and thickness of the heterostructure layer are selected such that in the range of the entire operating current, the emission in the active layer is the most, and the 'S amplification does not exceed the operation. The SAE produces a self-excited amplification value, wherein the propagation medium that amplifies the emission is at least a portion of the leakage region, at least a portion of the active layer, and at least a portion of the reflective layer, and the boundary of the reflective layer has a leak-in layer. In this case, a main conditioning layer is additionally introduced into the leakage region, the primary conditioning layer consisting of at least one sublayer, and at least one of its sublayers has a refractive index not less than the refractive index niN of the leakage layer, wherein One surface is adjacent to the active layer, and the confined layer on the opposite surface of the primary conditioning layer has a refractive index that is less than the refractive index of the primary conditioning layer.

The proposed SOA is based on original and non-obvious SAEs (see this section). Its main features include the creation of original and non-obvious leaking areas and other layers of new Hs. And making SAE. In this case, the main adjustment layer is introduced to the leaking area, and the position of the leaking interlayer is changed. In the proposed Hs, the active layer does not contain sub-layers and can be at least one active layer. If an active layer forms a divergence, the extra-leading area of the main adjustment layer is opposite to the active layer, and the infinity layer of the leak-in area is adjacent to the other side of the main adjustment layer. In the architecture of ::: 'The role of SOA is generated near the temporary spoofing procedure from the emission of the active layer and when it leaks into the leaking area. And controlled by the heterogeneous ratio thus achieving the aforementioned technique of the present invention The leakage procedure consists of the composition of the HS layer and the thickness definition structure. The effective refractive index neff is determined by the leakage index η 30 1314800. In the current operating range, the ratio of neff to nIN is subtracted from 丨 to Δ1. In the range of Δ, that is, from about 1.01 to about 0.99. Under the selected ne ff to niN ratio, the amplification, output power, and 喿: etc., and the sensitivity of the proposed S 0 Α to the input signal, Depending on the final amplification value of the transmission, the emission is transmitted in the moving layer of the SAE HS in a given operating current. As shown in the calculation of the proposed s〇A, the position through the main adjustment layer (or its sublayer) is shown. And thickness and refractive system The precise selection can achieve the maximum value of the final amplification. Therefore, the original adjustment layer of the original placement is additionally introduced into the proposed HS, making the solution of the technical problem possible. Firstly, the above parameters of the SOA are substantially improved and the inlet and The size of the exit aperture reduces the polarization sensitivity and the emission angle at the far field. In order to stabilize the SOA amplification mode, the reflection coefficient of the clear film on the SAE optical surface and the composition and thickness of the heterostructure layer are selected. The final amplification value of the emission in the active layer in an operating current is not exceeded - the amplification value that results in self-excitation of the SOA operation. Preferred embodiment for increasing the sensitivity to the wheeling signal and increasing the amplification factor of s〇A The SAE is proposed based on the HS, comprising at least two active layers, and having a main central adjustment layer between them, which is composed of one sub-layer and has a refractive index not less than the refractive index nw of the leak-in layer. For some SOAs, there are several restrictions on the thickness increase of the main conditioning layer of SAE HS, so it is best to accompany the main adjustment. The layer introduces an auxiliary conditioning layer into the leak-in region, the auxiliary conditioning layer is near the surface of the localized layer, which forms at least one sub-layer and has a refractive system having a refractive index not less than the leak-in layer 31 1314800

lIN In order to optimize the main parameters of S〇A, the main adjustment & main central adjustment layer and the auxiliary adjustment layer of SAEHS are manufactured smaller than the refractive index of the leak-in isolating coefficient nIN, and the thickness of the adjustment layer is from two. Choose from 0-005 microns to about 10 microns and larger. Also, in order to improve the temperature dependence of the SOA parameters, the SAE Hs is selected from a thickness ranging from about 0. 01 micrometers to about 〇.3 〇. In order to reduce the arpeggio coefficient and reduce the angular divergence of the S〇A amplified emission, the leakage layer thickness of the SAEHS leakage region is selected from a range of about 1 〇胄m to about w μm and larger, and at least one of the reflective layers Preferably, the layer is adjacent to the leak-in layer and is made by a refractive index coefficient close to the leak-in layer. 1 In order to simplify the manufacturing process, in some embodiments of the s〇A, at least one of the leak-in layers of the SAE HS35 entry region is made with a refractive index of a (four) μ coefficient. Optical loss defines the S0A efficiency of SAEHS. In a preferred embodiment for reducing internal light loss, the primary conditioning layer, the primary central conditioning layer (if any), the auxiliary conditioning layer (if any), and the drain The human layer and a portion of the at least one reflective layer adjacent to the leak-in layer are doped with a low-level appropriate doping impurity from about 3 μs to 3×10 −3·3·3, and the germanium layer is thickened About cm, properly doped impurities: doping. Depending on the number and location of the leak-in areas (or leak-in layers), two main SOA-symmetric SOAs and asymmetric s〇a can be fabricated. In the SAE of the package 32 1314800 contained in a symmetric SOA, the leak-in region is located on each side of the active layer, and has an equal refractive index and an equal thickness in most of the relevant layers. In inclusion in the asymmetric SOA @ SAE, the leak-in region can be on one side of the active layer, mostly on the side of the n-type doping. In a preferred embodiment of the proposed SOA, at a certain laser wavelength, at least one of the sub-layers of the leak-in region of the leak-in region has a composition that is the same as or close to the substrate, and the heterostructure is placed on the substrate. m says that the 'selection—the composition of the leak-in layer (or the refractive index) makes it the same or close to the composition (or refractive index) of the semiconductor substrate. The substrate is permeable to emission. The substrate is generally a binary semiconductor compound (such as gallium arsenide, indium phosphide, gallium nitride, gallium antimonide), and the thickness of the leak-in layer is usually made to a larger portion of the thickness of all layers, then in this case The level of compressive mechanical stress will be greatly reduced, and ohmic and thermal impedance will also be reduced, which will result in increased efficiency, increased output power, and increased operational life and reliability of the proposed SOA. In the same operating current, in order to increase the amplified emission output power by about two, three times and more, in the proposed SOA, the Hs contains at least two active layers whose holes are parallel to each other and between them A central primary conditioning layer is placed that includes two thin heavily doped P-type and n-type sub-layers that provide current tunneling from one active layer to another in SOA operation. In a preferred embodiment of the SAE (incorporating the proposed s〇A), there are four infinite emission regions located on either side of the current stripe region, one specific at the lateral sides from the two stripe regions 33 1314800 At the distance, the confinement emitters are deepened to a specific depth that exceeds the depth of the active layer locations, while those confined regions have a lower refractive index than the heterogeneous structure leaks into the layer. In order to obtain the polarization insensitivity of the SOA, the leakage layer in the SAE HS leakage region is fabricated with a thickness approximately equal to the width of the current stripe region. In the proposed SOA, in order to additionally reduce the need for clear film, the sae current stripe (or convex stripe) region is made to tilt the optical face hole at an appropriate angle. ' '

In the individual embodiment of the proposed SOA, the inlet and outlet apertures of the SAE are made to match the fiber aperture. In this case, in order to input the input signal and to amplify the emission output, a clear film is applied to the opposite side of the optical surface of the SAE, using not only those known fiber-coupled components, but also optical fiber H-' directly with SAE. Close contact. Reduce the input emission ^ The loss of its input to the fiber causes an increase in the efficiency of S 〇 A. In a preferred embodiment for obtaining a high quality magnified emission of SOA, the main source of the input emission is fabricated by an injection laser. In order to increase the efficiency of s〇A and the output power, the main injection laser is preferably selected as the above-described laser proposed in the present invention. For this SOA, the efficient laser coupling of the main laser and the SAE can be achieved by close contact between them without using optically facing components. In this idle form, the SOA embodiment is preferred, in which the main laser and the SAE are made of the same heterostructure of the phase π & The implementation of high-power SOA is also possible, straight, "the width of the SAE current stripe zone introduced by T is chosen to be greater than the introduction of the main laser, or the width of the SAE current stripe zone is to be widened. Method of fabrication 34 * 1314800 Laser and SAE incorporating SOA cause a significant reduction in internal optical loss (resulting in increased SAE efficiency) and a reduction in nonlinear distortion (distortion causes spatial instability of amplified emissions and leads to high power s〇A's output power limit). This is because the large part of the amplified emission (about 99.9% and more) in the proposed s〇A propagates through the transparent leak-in layer (a linear medium), and the flux is very A small part (about 〇.丨% and smaller) propagates through a nonlinear active medium. This not only determines the high output power, but also reduces the width of the emission spectral line, reduces its frequency drift, and improves the local frequency of the SOA. And high-speed modulation characteristics. In the novel non-obvious S0A proposed by the present invention, the input emission related main source (main laser) and the novel non-obvious SAE essence The originality and non-obviousness of the leak-in zone and other layers (their thickness and composition), these layers are opened by the main and non-obvious HSs of the main laser and SAE. The original main placement layer of the original 35 is adjacent The active layer is introduced into the leak-in area, mainly and auxiliary adjustment I, the uncover layer, and the leak-in layer to: their sub-layers, reflective layers, and other original characteristics of their sub-layers (position, &

The thickness, doping level) has been proposed to substantially change the most important characteristics of s〇A: amplification (4) (4), output power and angular divergence, input and output optical loss, operational lifetime, and A technique that simplifies alignment. The antagonistic sound of SOA proposed in the present invention is based on known basic technical procedures, which are currently well developed and widely used. This proposed solution satisfies the criteria of "industrial availability." 35 1314800 is doped with known 6x10" cm_3 to 3xl0i7 cm d impurities, leaking into layers 12, 13 and p-type and n-type reflective layers 5 And the first sub-layers i4, 16 of 6 are doped to lxl〇n cm-3, respectively, and the second sub-layers 15, 17 of the p-type and the b-type reflections ^5 and 6 are respectively doped to 2xl〇ls cm3 . The ratio of neff to nw is calculated for each of the selected 1-layer composition and thickness system provided by the current density of 0.3 kA/cm 2 and 丨〇 kA/cm 2 to obtain 1.000006 and 0.99964. The final amplification in the active layer at current density 〇 35 kA/cm 2 is 7.8cm". The divergence angle 计算 calculated in the vertical plane at a current density of 1 〇 kA/cm 2 is 6.0 degrees (hereinafter referred to as FWHM). The following HS1 embodiment differs from the above in that the leak-in layers 12 and 13 have the same 25 micron thickness in this embodiment. In this case, the ratio of n" to nIN calculated at a current density of 0.3 IcA/cm2 and 10 kA/cm2 is I 0. just 92 and 〇.99933, respectively. When the current density is 〇.3kA/Cm2, it is finally enlarged to (four) cm. When the current A/em2 current density is used, the divergence angle calculated in the vertical plane is 9 degrees. The following HS1 embodiment (see Fig. 2) differs from the embodiment of Fig. 2: in this embodiment, the leaking layer 12 and, 夂u you are grown by A1〇.〇5Ga0.95As, and additionally two The auxiliary adjustment layers 18 and 19 are introduced into the leak-in region together with the main adjustment layers 8 and 9, and the ^ ^ ^ thin layer is made of gallium arsenide and is located on each side of the active layer in the uncovering layer 1 U and between 12 and 13. The layers 12, n w g ς , ν 曰 U 13 and 5, 6 thus obtained have lower ohms and thermal impedance and compressive mechanical stress. The following examples of HS 1 (the same as 〇, and the δ case of the ear (see Figure 3) are different from the embodiment of ® 1, in the & lean example, the degree of leakage into layers 12 and 13 is 〇· 5 μm and 37 1314800 7.0 μm' and the thickness of the main conditioning layer 8 is 0.06 μm. For this fine example of HS1, the neff contrast ratio calculated at current densities of 0.3 kA/cm 2 and 1 OkA/cm 2 is i 〇〇 〇〇4 and 〇99984. The final amplification at a current density of 0.3 kA/cm2 is 1〇2 cm-, and the divergence angle Θ± calculated at the current density of i〇kA/cm2 is 8.1 degrees in the vertical plane. The following HS1 The embodiment (see Fig. 4) differs from the above embodiment in that two identical active layers 2 are formed in this practical example, and the main central conditioning layer 20 of gallium arsenide has a thickness of 〇. 2 μm. The thickness of the main adjustment layer 8 is introduced between the active layers and the thickness of the primary adjustment layer 8 is 0.03 μm. For this embodiment of HS 1 , the ratio of neff to n1N calculated at current densities of 〇3 kA/cm 2 and i 〇 kA/cm 2 are respectively 丨〇〇〇〇2 and 〇99984. The final amplification at a current density of 0.3 kA/cm2 is 8. 9 cm". In i The divergence angle calculated at kA/cm2 current density is 81 degrees in the vertical plane. The following HS1 embodiment is different from the embodiment shown in Fig. 4, in which, in this embodiment, the main central conditioning layer 2 includes two Thin p-type and p_-type sub-layers (each having a thickness of 0.005 μm) doped with yttrium and carbon to a concentration of 5 x 1 〇! 9 cm -3 respectively. The n_-type sub-layer is located in the p-type reflective layer The side and P-type sub-layers are located on one side of the n-type reflective layer and the type substrate. The following HS1 In this embodiment, the embodiment is different from the embodiment shown in Fig. 1, in which the leaking layers 12 and 13 are present. The same composition (and therefore the same refractive index) as the confined layers 9 and 10 is

Alo.Wa^As and reflective layers 5 and 6 (without sub-layers) have an A1〇.45GaQ.55AS composition. When compared with the previous one, the 38 / 1314800, sub-layer 14 and 16 systems of hs are respectively composed of low-component aluminum Alo.wGao 95As and /. ·. 6 a〇94As manufactured. In this case, the auxiliary adjustment layer 18 is made of gallium antimonide of equal thickness of 0. 24 microns. One of the three lasers: the example has increased efficiency, power and operational reliability. The proposed field shot 30 (see Fig. 7) is fabricated using the asymmetric embodiment shown in Fig. 3, in which the leaking layers 12 and 13 have the same composition, : having a knife A 0.5 and 7 〇 micron thickness of. The threshold current density of 〇.3kA/cm2 is obtained by selecting the thickness of the main adjustment layer 8 and +. The calculated divergence angle 在 in the vertical plane is initially reduced from 7.5 degrees (current density at 〇.3kA/Cm2) to 7.2 degrees (at 3kA/cm2) and then increased to 8.1 degrees (at lGkA) /em2). In this case, the size of the emitter area of the optical output of the resonator (at the 〇13 level) is increased from 4-6 microns to 7.2 microns from the bottom to 6.0 microns in the vertical plane. The following embodiment of the laser 3G differs from the previous embodiment in that the leakage layer 12 and j 3 in this embodiment have the same as the confined layers 9 and i 〇, and are also 疋, Al0 "Gao " As. The reflective layers 5, 6 (without sub-layers) are made of A1().45Ga°.55As. This embodiment of the laser 30 contains a smaller number of HS layers compared to the previous embodiment. The shot 3 (see Figure 8) was fabricated using the embodiment of the asymmetric HS1 proposed in Figure 4, in which two identical active layers 2 were fabricated, and a primary having a thickness of 0.012 microns was placed between them. Central illuminating layer 20. In the embodiment of 14 lasers, the gate current density is reduced to 0.25 kA/cm2. The following embodiment of laser 30 differs from the above embodiment in that the main 1314800 two η -type and p-type sublayers, each of which has the same 5 X1 〇 19 cm -3 current carrying ° in the operation of the laser 30, this sub-layer provides an active layer of current tunneling However, the central conditioning layer 20 contains a thickness of 0.005 micrometers of body carbon and a wonderful doping for a master The layer is connected to the same 屯• 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋The AE 4 (four) embodiment and its method of manufacture are identical to the embodiment of the laser 30 shown in Figure 5, except that the split surface of HS1 is applied with an equal reflection coefficient R of 〇〇1%, and Clear film of I. At all current values, the final amplification in the active layer (defined by the composition and thickness of the heterostructure layer and defined by the reflection coefficients R, and R_2) is less than its self-excitation threshold until 10kA /cm2 and greater current density. When the current density exceeds the value of 〇3kA/cm2, it begins to meet the emission leakage state from the active layer leakage to the leakage layer (having a signal at the input). The leakage angle φ is In this case, it increases from 0 degrees of 〇3kA/cm2 to 1.53 degrees of 10kA/cm2. At 10kA/cm2, the inlet hole of SAE 40 is 8xl〇e m2, and the angular aperture is about 6.0 degrees χ5·7 degrees. The following SAE 40 (see Figure 9) used in SOA The example is different from the previous embodiment, in which the stripe width of the current is equal to 8 micrometers, the composition of the HS 1 layer, and the emission wavelength is 1 305 nanometers, and the optical surface 31 of the clear films 41 and 42 (where R, And R2 is the same and equal to 0.01%) coupled to the fiber, the input fiber 43 is used for the emission input through the wheeled optical surface 31, wherein the optical surface has a clear film 41; -1314800 and the wheeled fiber 44 is used to optically The opposite side of the emission output of 31, wherein the optical surface has a clear film 42. The inlet and outlet aperture sizes of the SAE 4 are equal to 10 x 10 microns 2, which is consistent with the aperture of the known fiber such that the input fiber 43 and the output fiber 44 can be directly coupled to the optical dry surface 3 of the respective cladding 41 and 42. SAE 40 is in close contact. This sAE 4〇 embodiment can be used as a modern fiber-optic high-efficiency power amplifier, optical switch, and optical wavelength converter. Its main advantage is the reduction of noise, which is caused by its low loss input input to the SAE 40. The noise figure is comparable to fiber and Raman amplifiers in this case. 1〇〇 The near-square propagation area of the amplified meter emission makes the SAE 40 virtually insensitive to the polarization of the input signal. In this SAE 4〇, a signal with a low signal amplification of more than 35 dB can be obtained, and the unreachable rate can be reached and more. One advantage of the SAE 40 is its output: the large launch system is actually symmetrical and has a low angle divergence. The following use of the #SAE 4 〇 embodiment in SOA differs from the above embodiment in that the current embossed stripe pattern is introduced at an angle of 7 degrees to the optical face hole. This makes it possible to reduce the demand values of the reflection coefficients Ri and R2 by about a factor of magnitude. The proposed SAE 4 也在 used in SOA is also manufactured according to the embodiment presented in Fig. 2. This SAE 4 〇 embodiment and its fabrication method are fully consistent with the embodiment of the laser 3 提出 proposed in Figure 6, except that the split surface of HS1 is applied with an equivalent reflection of 〇〇1%. The coefficient R, and the clear film of R2. The proposed SAE 4 也在 used in SOA is also fabricated in accordance with the HS1 embodiment shown in Table 421. 1314800 in Figure 3, and is fully consistent with the embodiment of the laser 3 表示 shown in Figure 7, except for the split of HS1. Outside the opening, a clear film having an equal reflection coefficient R! and \ of 0.01% is applied thereto. The proposed SAE 4 也在 used in SOA is also fabricated according to the HS 1 embodiment shown in Figure 4, and is fully consistent with the embodiment of the laser % shown in Figure 8, except for the split face of HS1. Further, clear films 41, 42 having equal reflection coefficient scales 1 and 112 of 〇.〇1% were applied thereto. The following SAE 4 〇 embodiment, also used in SOA, differs from the embodiment of laser 30 in that the two active layers have current tunneling channels between them, differing only in the clear film 41, 42. %Reflection coefficient. The proposed SOA (see Figure 10) includes a primary source of input emissions that is fabricated in a manner that is compatible with the laser 30 and the SAE 40. Laser % and sae 40 are produced by the same hsi embodiment as described above and shown in Figure i. The laser 3 is identical to the embodiment described above by FIG. The SAE 40-inch laser 30 is characterized in that clear films 41, 42 having an equal reflection coefficient of 0.01% are applied to the cracked surface 31 ° laser 30 and the current stripe region of the SAE 40 are the same 8 micron width. The exit aperture of the laser 30 is the same as the entrance aperture of the SAE4〇 and is equal to 8.〇x8.〇2, and the calculated divergence angle θ丄 is 6.0 degrees in the vertical plane at 1〇kA/Cm2. The output power of the laser 3 在 is 05W in a single spatial mode with two lateral coefficients. The large and (4) main laser 3 turns and the ME inlet hole allow the main laser 30 and the SAE 40 to be aligned at the shortest distance between a long light and have a full fishing rod aligned with them. A dry and sufficient emission accuracy and low loss. Such an SOA is a single-mode and single-frequency lightning 43!314800 shot launch with a high-speed temporary deduction of a " eight-to-four super-South power source. [Industrial Applicability] Heterogeneous structures are used to generate semiconductor injection-type emission sources, such as injection lasers, semiconductor amplifying components, and semiconductor optical amplifiers, which are used in optical and optical signals and data transmission systems, optical ultra-high speed calculation and switching. It is the development of medical equipment, laser industrial equipment, frequency-doubled lasers, and for the use of rabbit solid-state and fiber amplifiers and lasers. BRIEF DESCRIPTION OF THE DRAWINGS The present invention can be understood by referring to Figs. 1 to 10, wherein: Fig. 1 is a cross-sectional view of a proposed symmetric heterostructure having an active layer, two main adjustment layers, and each of the active layers. - Two identical leaking layers on the side. - Figure 2 is a cross-sectional view of a (four) heterogeneous structure having an active layer, two primary and two auxiliary conditioning layers. Figure 3 is a cross-sectional view of a proposed symmetrical heterostructure,

An active layer, two main adjustments, "π, and two leaking layers on each side of the active layer with different thicknesses. The cross-section of the symmetrical heterostructure with the main central adjustment layer and the two active layers, two main adjustment layers, and two leakage layers with different thicknesses. Figure 5 is a longitudinal cross-sectional view of a pair of lasers, which has a reflective coating on the surface, a main active layer, and two main adjustment layers. With two identical leaking layers on each side of the active layer. Figure 6 is a schematic longitudinal cross-sectional view of a symmetric laser having a reflective coating on the optical 44 • 1314800 surface with an auxiliary adjustment layer. The active layer, two main and two auxiliary m reaming laser longitudinal profile iS7 B], lifted the reflective coating on the optical surface, and the ancient y hundred active layer, two main adjustment layers and active Two leaking layers of different thicknesses on each side of the layer and ancient π eight. Figure 8 is a schematic longitudinal cross-sectional view of a non-non-p-% laser with a reflective coating on the face, which is a right-handed plus two elements, two active layers, and one main central adjustment layer. .

Figure 9 is a longitudinal cross-sectional view of a SAE having a clear 臈 with two optical fibers coupled to it on the optical surface, one active layer, two main tuned layers, and each side of the active layer #文碉甩母The two remaining leaking layers. Figure 10 is a longitudinal cross-sectional view of a SOA, where hurricane k 圃S0A is independently located on one::: an iso-i=T:SAE having a reflective coating on the optical surface, which is composed of the same symmetrical heterostructure, shell, and structure There is one active layer, two main sounds I, &, and the same leaking layer on the side of the active layer. Wang Dong [Major component symbol description] 2: Active layer 3, 4: Leakage zone 3, 6: Reflective layer 7: Gallium arsenide substrate 8, 9: Main adjustment layer 1 G, 11: Localized layer 12, 13: Leakage Incoming layer 45 1314800 14, 15: first sub-layer 16, 17: second sub-layer 18, 19: auxiliary adjustment layer 20: main central adjustment layer 30: laser 31: optical surface 32, 33: reflective coating 40: Semiconductor Amplifying Element • 41, 42: Clear Film 43: Input Fiber 44: Output Fiber 46

Claims (1)

1314800 X. Patent application scope: 1 A heterostructure based on a semiconductor compound is characterized by the ratio of the effective refractive index neff of the heterostructure to the refractive index n1N of the leaked layer, that is, the ratio of 'neff to nIN is increased from 1 to Δ to In the range of 1 minus Δ, select 'where Δ is much less than 1, the heterostructure includes at least one active layer, at least two reflective layers, at least one emission leak-in region, and at least one limitation in the leak-in region a layer having at least one reflective layer on each side of the active layer, the reflective layer being composed of at least one sub-layer and having a refractive index smaller than an effective refractive index neff of the heterostructure, the emission leak-in region being transparent, and being active Between the layer and the corresponding reflective layer, the leak-in region comprises at least one emission leak-in layer having a refractive index niN and consisting of at least one of the at least one localized layer in the leak-in region and at least one sub-layer Group f, wherein the main regulating layer is additionally bowed into the leaking area, the main 5th node layer consisting of at least _ an early island & ^, ^ sublayer and There is at least one and the right X is smaller than the refracting layer of the leaking layer, and the ^ has a refractive index for its sub-layer, and its - has a 钕 biased area on the opposite side of the main regulating layer ^, the exposure layer has a ratio of the main reflection coefficient. The main negligence layer has a smaller refractive index 2_ as in the scope of the application of the scope of the third item, n material Α, , shell, structure, in which the ratio of operating electrical efi to ηΙΝ with the range of 菩雷, ώ 丄1. 01 to 0.99. (3) Adding and decreasing, its size 3. If the heterogeneous structure between the structures of the patent application scope contains at least two, :: structure 'where the main medium-active layer is placed between the heterogeneous, and in their mysterious a layer having a sub-layer composed of 47 1314800 having a refractive index smaller than the refractive index ηΐΝ of the leak-in layer having a heterogeneous structure of the first term of the auxiliary region, wherein the leak-in region layer is assisted by (4) The surface of the layer is adjacent; the refractive index of the auxiliary modulation is composed of sub-layers and has a heterogeneous structure not less than the refractive index of the leak-in layer, at least the first item of the patent range, wherein the number of reflective layers. The rafter layer has a refractive system which is similar to the refractive index of the draining layer. 6. The heterostructure according to the scope of claim i, wherein the leaking in-layer has at least one refractive index equal to the refractive index of the localized layer. A heterostructure in which the patent scope 帛i is applied, wherein a sub-layer that leaks into the layer has a composition that is the same as or close to the substrate, and the heterostructure is placed on the substrate. 8. A heterostructure according to the scope of the patent application, wherein the heterostructure comprises at least two active layers, the pores of which are parallel to each other, and a main central conditioning layer is placed between them, comprising two thin heavily doped layers The dummy and η-type sublayers provide current tunneling channels from one active layer to another in the operation of the injection source. 9. A semiconductor injection source, which is actually an implanted laser, comprising a heterostructure and an optical surface, a reflector, an ohmic contact, an optical resonator, wherein at least a portion of the dielectric of the optical resonator is made to leak into At least a portion of the region, at least a portion of the active layer, at least a portion of the reflective layer, a reflection coefficient of the optical resonator reflector, and a heterostructure 48: 1314800 = and the thickness is selected such that in operation of the semiconductor = two active layers The emission amplification is performed in the entire operating current and the threshold of the threshold of the laser. The heterostructure is made according to the heterogeneous structure of any one of the patent applications, and in the range of the gate interpolation current, neff#niN The ratio is subtracted from i plus 1 in the range of γ, where γ is a number smaller than Δ. 10. The semiconductor injection source of claim 9, wherein the ratio of the 〜 ΙΝ 在 in the range of the laser threshold 电流 current ranges from about 1.005 to about 0.995. a body injection source as claimed in the patent application, wherein the limited emission regions on both sides of the current stripe region are deepened to a specific depth at least at a specific distance from the two lateral sides of the stripe region. The depth of the active layer position is exceeded, and the refractive index of those limited regions is smaller than the refractive index of the heterostructure leakage layer. 12. A semiconductor injection source, in fact a semiconductor amplifying element comprising a heterostructure and an optical surface, an ohmic contact, and at least one optical surface of the clear film '纟 amplifying the emitted propagation medium leakage region at least The reflection coefficient of a portion, at least a portion of the active layer, and at least one adjacent portion of the reflective layer on the optical surface and the composition and thickness of the heterostructure layer are selected such that the final emission is amplified in the active layer over the entire operating current range. The value is less than the final amplification value resulting from the operation of the semiconductor implanted emission originating from the excitation of the heterostructure of any of items 1 through 8 of the patent application. 13. A semiconductor injection source as claimed in claim 12, 49 1314800 wherein the confined emission regions located on both sides of the current strip region are deepened to a specific extent at least at a specific distance from the two lateral sides of the strip region The depth, which exceeds the depth of the active layer position, and the refractive index of those confined regions is smaller than the refractive index of the heterostructure leakage layer. 14. The semiconductor injection type emitter of claim 12, wherein the leak-in layer of the leak-in region has a thickness approximately equal to a width of the current stripe region. 1 5. The semiconductor injection source of claim 2, wherein the current stripe region is inclined at an appropriate angle to the aperture of the optical surface. 16. The semiconductor injection source of claim 12, wherein the opposite optical surface to which the film is applied is optically coupled to the optical fiber. 17. A semiconductor injection-type emission source, actually a semiconductor optical amplifier, comprising an optically coupled main source for input and emission, and a semiconductor amplification element 2, wherein the semiconductor amplification element is according to any one of claim 12 to claim 16 Manufactured by the semiconductor injection source of the item. 18. A semiconductor injection source as claimed in claim 17, wherein the main source of the input emission is fabricated as an injection laser. The semiconductor injection type emission source is as claimed in claim 17, wherein the injection type laser is fabricated according to the semiconductor injection type emission source of any one of claims 9 to 2. 2. A semiconductor injection source as claimed in claim 18 or 19 wherein the implanted laser and the semiconductor amplifying element are mounted in the same texture and the optical refinement is made by intimate contact therebetween. 50 .1314800. XI. 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