1314347 layer and the third insulation layer are etched to form rings which are the same as each metal layer and are overlapped. In addition, the micro-electromechanical component is disposed on printed circuit board which is set in an electron microscope. 七、指定代表圖： (一） 本案指定代表圖為：第（十）圖。 (二） 本代表圖之元件符號簡單說明： 21 :矽晶圓； 43 :第二金屬層； 22 :氮矽化合物層； 61 :氮石夕化合物層；以及 2 3 :第一金屬層； 62 :第三金屬層。 42 :氮砍化合物層； 八、 本案若有化學式時’請揭示最能顯示發明特徵的化學式· 九、 發明說明： 【發明所屬之技術領域】 本發明係提供一種光學裝置、微機電元件及其製造方 法’特別是有關於應用於電子顯微鏡之元件。 1314347 【先前技術】 當前對於「微觀世界」的觀察，從光學顯微鏡到發展 出以電子波為光源，波長更短、解析率更高的電子顯微鏡。 在顯微影像中，發現了改變相位對比（phase contrast) 對於顯微影像的品質有明顯的改善，從而可觀察到更多的 資訊。因此，為將此種相位對比的應用實現於電子顯微鏡 上。本發明人基於多年從事研究與諸多實務經驗，經多方 研究設計與專題探討，遂於本發明提出一種光學裝置、微 機電元件及其製造方法以作為前述期望一實現方式與依 據。 【發明内容】 有鑑於上述課題，本發明之目的為提供一種光學裝 置、微機電元件及其製造方法，特別是有關於應用於電子 顯微鏡相位調整之微機電元件。 緣是，為達上述目的，依本發明之一微機電元件，由 下而上依序包含有基板、第一絕緣層、第一金屬層、第二 絕緣層、第二金屬層、第三絕緣層及第三金屬層，其中第 一金屬層、第二金屬層及第三金屬層分別圖案化並蝕刻形 成第一操作區、第二操作區及第三操作區與第一電極區、 第二電極區及第三電極區，且各操作區中之第一圓環、第 二圓環及第三圓環彼此重疊，而第一電極區、第二電極區 及第三電極區不相重疊，同時，藉由蝕刻第一絕緣層、第 二絕緣層及第三絕緣層以形成與各圓環相同且重疊之圓環。 1314347 再者，為達上述目的，依本發明之另一微機電元件， 由下而上依序包含有基板、第一絕緣層、第一黏著層、第 一金屬層、第二絕緣層、第二黏著層、第二金屬層、第三 絕緣層、第三黏著層及第三金屬層，其中第一黏著層與第 一金屬層、第二黏著層與第二金屬層及第三黏著層與第三 金屬層分別圖案化並蝕刻形成第一操作區、第二操作區及 第三操作區與第一電極區、第二電極區及第二電極區’且 各操作區中之第一圓環、第二圓環及第三圓環彼此重疊， 而第一電極區、第二電極區及第二電極區不相重豐，同時’ 藉由蝕刻第一絕緣層、第二絕緣層及第三絕緣層以形成與 各圓環相同且重疊之圓環。 承上所述，因依本發明之微機電元件，由第一電極區、 第二電極區及第三電極區通電，使第一圓環、第二圓環及 第三圓環間產生電場，以進行電子顯微鏡之相位調整。 茲為使貴審查委員對本發明之技術特徵及所達成之 功效有更進一步之暸解與認識，下文謹提供較佳之實施例 及相關圖式以為輔佐之用，並以詳細之說明文字配合說明 如後。 【實施方式】 為讓本發明之上述目的、特徵、和優點能更明顯易懂， 下文依本發明之光學裝置、微機電元件及其製造方法特舉 較佳實施例，並配合所附相關圖式，作詳細說明如下，其 中相同的元件將以相同的元件符號加以說明。 1314347 請參閱第一圖，係為本發明一較佳實施例之微機電元 件之製造方法之流程圖。此流程步驟如後： 步驟S11 :提供基板； 步驟S12 :形成第一絕緣層，位於基板上； 步驟S13 :形成第一金屬層，位於第一絕緣層上； 步驟S131:圖案化並蝕刻第一金屬層以形成第一操作 區及第一電極區，第一操作區具有第一圓環； 步驟S14 :蝕刻第一操作區下之基板以形成一窗； 步驟S15 :形成第二絕緣層，位於第一金屬層上； 步驟S16 :形成第二金屬層，位於第二絕緣層上； 步驟S161 :圖案化並蝕刻第二金屬層以形成第二操作 區及第二電極區，第二操作區具有第二圓環，且重疊於第 一圓環之上，而第二電極區不與第一電極區重疊； 步驟S17 :形成第三絕緣層，位於第二金屬層上； 步驟S18 :形成第三金屬層，位於第三絕緣層上； 步驟S181 :圖案化並蝕刻第三金屬層以形成第三操作 區及第三電極區，第三操作區具有第三圓環，且重疊於第 二圓環之上，而第三電極區不與第一電極區及第二電極區 重疊；以及 步驟S19 :蝕刻第一絕緣層、第二絕緣層及第三絕緣 層以形成與第一圓環、第二圓環及第三圓環相同且重疊之 圓環，及蝕刻覆蓋於第一電極區及第二電極區上之絕緣層。 1314347 上述之基板較佳可為矽晶圓，各絕緣層之材料較佳可 為氮石夕化合物，如iu化^夕，各金屬層較佳可為銘或金，另 外，更可於基板下形成一氮矽化合物層，且設置至少一光 圈係提供作為進光量的調整，更提供一印刷電路板用以架 設此微機電元件，並將印刷電路板設置於一電子顯微鏡中。 請一併參閱第二圖至第八圖，係依據第一圖本發明一 較佳實施例之微機電元件形成過程之示意圖。在此實施例 中，第二圖係表示步驟S11〜S13，其中步驟S11係先以一 般清潔基板的方法清洗矽晶圓21，步驟S12則以化學氣相 沈積成長低應力的氮矽化合物層22於矽晶圓21上，步驟 S13則以鍍膜技術鍍上第一金屬層23於氮矽化合物層22 上。第三圖係表示步驟S131圖案化第一金屬層23之式樣， 此圖案化係以一般上光阻、顯影、钱刻等技術達成，在此 不加以贅述，此圖案式樣形成有具有第一圓環311之第一 操作區31及第一電極區32。第四圖係表示步驟S14〜S16, 其中步驟S14蝕刻第一操作區31下之矽晶圓21形成一窗 41，步驟S15則以化學氣相沈積成長氮矽化合物層42於第 一金屬層23上，步驟S16則以鍍膜技術鍍上第二金屬層 43於氮矽化合物層42上。第五圖係表示步驟S161圖案化 第二金屬層43之式樣，此步驟係以第三圖相同的技術達 成，此圖案式樣形成有具有第二圓環511之第二操作區51 及第二電極區52。第六圖係表示步驟S17及S18，其中步 驟S17則以化學氣相沈積成長氮矽化合物層61於第二金屬 層43上，步驟S18則以鍍膜技術鍍上第三金屬層62於氮 矽化合物層61上。第七圖係表示步驟S181圖案化第三金 1314347 屬層62之式樣，此步驟係以第三圖相同的技術達成，此圖 案式樣形成有具有第三圓環711之第三操作區71及第三電 極區72。第八圖係表示步驟S19蝕刻氮矽化合物層22、42 及61以形成與第一圓環311、第二圓環511及第三圓環711 相同且重疊之圓環，及覆蓋於第一電極區32及第二電極區 52上之氮矽化合物層42及61。 請參閱第九圖，係為本發明一較佳實施例之微機電元 件設置光圈之示意圖。圖中，由第三金屬層62向下貫穿形 成一光圈91，提供作為進光量的調整。 請參閱第十圖，係為本發明一較佳實施例之微機電元 件之侧視圖。圖中，矽晶圓21上形成一氮矽化合物層22， 氮矽化合物層22上形成第一金屬層23，且圖案化第一金 屬層23，第一金屬層23上再形成一氮石夕化合物層42，氮 矽化合物層42上形成第二金屬層43，且圖案化第二金屬 層43，第二金屬層43上再形成一氮矽化合物層61，氮矽 化合物層61上形成第三金屬層62，且圖案化第三金屬層 62，最後蝕刻掉不需要的部份。 請參閱第十一圖，係為本發明另一較佳實施例之微機 電元件之製造方法之流程圖。此流程步驟如後： 步驟Sla :提供基板； 步驟Sib :形成第一絕緣層，位於基板上； 步驟Sic :形成第一黏著層，位於第一絕緣層上 位於第一黏著層上； 步驟Sid :形成第一金屬層， 9 1314347 步驟Sldl:圖案化並钱刻第一黏著層及第一金屬 形成第-操作區及第—電極區，第—操作區具有第―圓曰環； 步驟Sle :㈣第—操作區下之基板以形成一窗； 步驟Slf:形成第二絕緣層，位於第一金屬層上； 步驟Slg:形成第二黏著層，位於第二絕緣層上； 步驟Slh:形成第二金屬層，位於第二黏著層上； ^驟Slhn圖案化並_第二黏著層及第二金屬層 =成第二操作區及第二電極區，第二操作區具: 區重叠弟^衣之上，而第二電極區不與第—電極 步驟Sli .形成第三絕緣層，位於第二金屬層上； 步驟Slj .形成第三黏著層，位於第三絕緣層上； 步驟Sik.形成第三金屬層，位於第三黏著層上； 步驟Slkl :圖案化並蝕刻第二 形成第：摔作α笛〜 者層及紅金屬層以 少取乐一轺作區及弟二電極區，第三 環，且重疊於第二圓環之 ''乍°。、有第二圓 區及第二電極區重疊;以土弟二電極區不與第-電極 声以第一絕緣層、第二絕緣㈣ 層以形成與第—圓環、筮- ^ 巴緣 圓環，及蝕刻覆蓋於第—電極/及第二^相同且重疊之 次弟一电極區上之絕緣層。 為氮梦化合:板秒:圓’各絕緣層之材料較佳可 "夕，各黏著層較佳可為鈦或鉻，各 Ϊ314347 金屬層較佳可為銘或金，另外，更可於基板下形成一氮石夕 化合物層，且設置至少一光圈係提供作為進光量的調整， 更提供一印刷電路板用以架設此微機電元件，並將印刷電 路板設置於一電子顯微鏡中。 請一併參閱第十二圖至第十八圖，係依據第十一圖本 發明另一較佳實施例之微機電元件形成過程之示意圖。在 此實施例中，第十二圖係表示步驟Sla〜Sid，其中步驟Sla 係先以一般清潔基板的方法清洗矽晶圓al，步驟Sib則以 φ 化學氣相沈積成長低應力的氮矽化合物層a2於矽晶圓al " 上，步驟Sic以鍵膜技術鑛上第一黏著層a3於氮石夕化合物 - 層a2上，步驟Sid則以鍍膜技術鍍上第一金屬層a4於第 一黏著層a3上。第十三圖係表示步驟Sldl圖案化第一黏 著層a3及第一金屬層a4之式樣，此圖案化係以一般上光 阻、顯影、蝕刻等技術達成，在此不加以贅述，此圖案式 樣形成有具有第一圓環bll之第一操作區bl及第一電極區 b2。第十四圖係表示步驟Sle〜Slh，其中步驟Sle蝕刻第 φ 一操作區bl下之矽晶圓al形成一窗d，步驟Slf則以化 學氣相沈積成長氮石夕化合物層c2於第一金屬層a4上，步 驟Slg以鍍膜技術鍍上第二黏著層c3於氮矽化合物層c2 上，步驟Slh則以鍍膜技術鍍上第二金屬層c4於第二黏著 層c3上。第十五圖係表示步驟Slhl圖案化第二黏著層c3 及第二金屬層c4之式樣，此步驟係以第十三圖相同的技術 達成，此圖案式樣形成有具有第二圓環dll之第二操作區 dl及第二電極區d2。第十六圖係表示步驟Sli〜Slk，其 中步驟Sli則以化學氣相沈積成長氮矽化合物層el於第二 11 1314347 金屬層c4上，步驟SI j以鍍膜技術鑛上第三黏著層e2於 氮矽化合物層el上，步驟Slk則以鍍膜技術鍍上第三金屬 層e3於第三黏著層e2上。第十七圖係表示步驟Slkl圖案 化第三黏著層e2及第三金屬層e3之式樣，此步驟係以第 十三圖相同的技術達成，此圖案式樣形成有具有第三圓環 Π1之第三操作區fl及第三電極區f2。第十八圖係表示步 驟Sim蝕刻氮矽化合物層a2、c2及el以形成與第一圓環 bll、第二圓環dll及第三圓環Π1相同且重疊之圓環，及 蝕刻覆蓋於第一電極區b2及第二電極區d2上之氮矽化合 物層c2及el。 請參閱第十九圖，係為本發明另一較佳實施例之微機 電元件之側視圖。圖中，矽晶圓al上形成一氮矽化合物層 a2，I石夕化合物層a2上形成第一黏著層a3，第一黏著層 a3上形成第一金屬層a4，且圖案化第一黏著層a3及第一 金屬層a4 ’第一金屬層a4上再形成一氮石夕化合物層c2， 氮矽化合物層c2上形成第二黏著層c3，第二黏著層c3上 形成第二金屬層c4，且圖案化第二黏著層c3及第二金屬 層c4，第二金屬層c4上再形成一氮矽化合物層el，氮矽 化合物層el上形成第三黏著層e2，第三黏著層e2上形成 第三金屬層e3,且圖案化第三黏著層e2及第三金屬層e3, 最後蝕刻掉不需要的部份。 上述之化學氣相沈積在習知之化學氣相沈積技術有大 氣壓化學氣相沈積（atmospheric pressure CVD, APCVD) 系統、低壓化學氣相沈積（low pressure CVD, LPCVD)系 統或電漿輔助化學氣相沈積（plasma enhanced CVD, 12 1314347 PECVD)系統等，鍍m技術在習知應用的技術有電子槍 (E-gun) ^ mm (sputter)(thermal coater) 等’ M刻在習知與㈣㈣錢式_ '乾絲刻或活性 離子蝕刻（reactive ionetching，RiE)等，此本發明係 應用前述各項微機電技術以製成微機電元件。 ^ iyQ βρ 裝置之示意圖。圖令，光學；：：权佳貫施例之光學 .其t，第-基板82—板82及—微機電元件 一開孔咖，提供作為電子電路板，其具有一第 電元件⑽-般可為靜81進縫㈣整，微機 心改變電子顯微鏡81所發= 82上’ < 電子束84之相位。 ，如手電路板之手段有膠著、焊接或1314347 layer and the third insulation layer are etched to form rings which are the same as each metal layer and are overlapped. In addition, the micro-electromechanical component is disposed on printed circuit board which is set in an electron microscope. Figure: (1) The representative representative of the case is: (10). (2) A brief description of the symbol of the representative figure: 21: germanium wafer; 43: second metal layer; 22: nitrogen germanium compound layer; 61: nitrogen nitride compound layer; and 2 3: first metal layer; : The third metal layer. 42: a nitrogen chopping compound layer; VIII. In the case of a chemical formula, please disclose the chemical formula which best shows the characteristics of the invention. IX. Description of the Invention: [Technical Field] The present invention provides an optical device, a microelectromechanical device and the same The manufacturing method is particularly related to components applied to an electron microscope. 1314347 [Prior Art] At present, the observation of the "microscopic world" has led to the development of an electron microscope with a shorter wavelength and a higher resolution from an optical microscope. In the microscopic image, it was found that changing the phase contrast has a significant improvement in the quality of the microscopic image, so that more information can be observed. Therefore, the application of such phase contrast is realized on an electron microscope. The present inventors have developed an optical device, a microelectromechanical component, and a manufacturing method thereof based on many years of research and many practical experiences, and have been proposed as an implementation and basis of the foregoing. SUMMARY OF THE INVENTION In view of the above problems, it is an object of the present invention to provide an optical device, a microelectromechanical device, and a method of fabricating the same, and more particularly to a microelectromechanical device for phase adjustment of an electron microscope. In order to achieve the above object, according to one of the microelectromechanical components of the present invention, the substrate, the first insulating layer, the first metal layer, the second insulating layer, the second metal layer, and the third insulating layer are sequentially included from bottom to top. a layer and a third metal layer, wherein the first metal layer, the second metal layer and the third metal layer are respectively patterned and etched to form a first operation region, a second operation region and a third operation region, and a first electrode region, and a second An electrode region and a third electrode region, wherein the first ring, the second ring and the third ring in each operating region overlap each other, and the first electrode region, the second electrode region and the third electrode region do not overlap each other, At the same time, the first insulating layer, the second insulating layer and the third insulating layer are etched to form a ring which is identical and overlaps with the respective rings. Further, in order to achieve the above object, another microelectromechanical device according to the present invention comprises, in order from bottom to top, a substrate, a first insulating layer, a first adhesive layer, a first metal layer, a second insulating layer, and a second a second adhesive layer, a second metal layer, a third insulating layer, a third adhesive layer and a third metal layer, wherein the first adhesive layer and the first metal layer, the second adhesive layer and the second metal layer and the third adhesive layer The third metal layer is patterned and etched to form the first operation region, the second operation region, and the third operation region, and the first electrode region, the second electrode region, and the second electrode region, respectively, and the first ring in each operation region The second ring and the third ring overlap each other, and the first electrode region, the second electrode region and the second electrode region are not heavy, and at the same time 'by etching the first insulating layer, the second insulating layer and the third The insulating layer forms a ring that is identical and overlaps with each of the rings. According to the above, according to the MEMS device of the present invention, the first electrode region, the second electrode region and the third electrode region are energized to generate an electric field between the first ring, the second ring and the third ring. To adjust the phase of the electron microscope. In order to provide a better understanding and understanding of the technical features and the efficacies of the present invention, the preferred embodiments and related drawings are provided for the purpose of assistance, and the detailed descriptions are followed by a description. . DETAILED DESCRIPTION OF THE INVENTION In order to make the above objects, features, and advantages of the present invention more comprehensible, the optical device, the microelectromechanical element, and the method of manufacturing the same according to the present invention are described in detail below, and the related drawings are attached. The detailed description is as follows, in which the same elements will be described with the same element symbols. 1314347 Referring to the first drawing, there is shown a flow chart of a method of fabricating a MEMS element in accordance with a preferred embodiment of the present invention. The process steps are as follows: Step S11: providing a substrate; Step S12: forming a first insulating layer on the substrate; Step S13: forming a first metal layer on the first insulating layer; Step S131: patterning and etching the first a metal layer to form a first operating region and a first electrode region, the first operating region having a first ring; Step S14: etching the substrate under the first operating region to form a window; Step S15: forming a second insulating layer, located Step S16: forming a second metal layer on the second insulating layer; Step S161: patterning and etching the second metal layer to form a second operating region and a second electrode region, the second operating region having a second ring, and overlapping the first ring, and the second electrode region does not overlap with the first electrode region; Step S17: forming a third insulating layer on the second metal layer; Step S18: forming a third a metal layer on the third insulating layer; Step S181: patterning and etching the third metal layer to form a third operating region and a third electrode region, the third operating region having a third ring and overlapping the second ring Above the third electrode area Not overlapping the first electrode region and the second electrode region; and step S19: etching the first insulating layer, the second insulating layer, and the third insulating layer to form the same as the first ring, the second ring, and the third ring And overlapping the rings, and etching the insulating layer covering the first electrode region and the second electrode region. 1314347 The above substrate may preferably be a germanium wafer, and the material of each insulating layer may preferably be a Nitrogen compound, such as iu, and each metal layer may preferably be Ming or Gold, and further, may be under the substrate. A layer of a ruthenium ruthenium compound is formed, and at least one aperture is provided to provide adjustment as a light input amount, and a printed circuit board is further provided for erecting the MEMS element, and the printed circuit board is placed in an electron microscope. Referring to Figures 2 through 8 together, a schematic diagram of a microelectromechanical device forming process in accordance with a first embodiment of the present invention is shown. In this embodiment, the second figure shows steps S11 to S13, wherein step S11 first cleans the germanium wafer 21 by a method of generally cleaning the substrate, and step S12 forms a low-stress nitrogen nitride compound layer 22 by chemical vapor deposition. On the wafer 21, in step S13, the first metal layer 23 is plated on the yttrium compound layer 22 by a plating technique. The third figure shows the pattern of patterning the first metal layer 23 in step S131. The patterning is achieved by techniques such as general photoresist, development, and engraving, and will not be described herein. The pattern pattern is formed with the first circle. The first operating region 31 of the ring 311 and the first electrode region 32. The fourth figure shows steps S14 to S16, wherein step S14 etches the germanium wafer 21 under the first operation region 31 to form a window 41, and step S15 chemically vapor deposits the nitrogen germanium compound layer 42 to the first metal layer 23 Then, in step S16, the second metal layer 43 is plated on the nitrogen argon compound layer 42 by a plating technique. The fifth figure shows the pattern of patterning the second metal layer 43 in step S161. This step is achieved by the same technique as in the third figure. The pattern pattern is formed with the second operation area 51 and the second electrode having the second ring 511. District 52. The sixth figure shows the steps S17 and S18, wherein the step S17 is to chemically vapor deposit the nitrogen ruthenium compound layer 61 on the second metal layer 43, and the step S18 is to apply the third metal layer 62 to the yttrium compound by the coating technique. On layer 61. The seventh figure shows the pattern of patterning the third gold 1314347 genus layer 62 in step S181. This step is achieved by the same technique as the third figure. The pattern pattern is formed with the third operation area 71 having the third ring 711 and the Three electrode zone 72. The eighth figure shows that the nitrogen ruthenium compound layers 22, 42 and 61 are etched in step S19 to form the same and overlapping ring as the first ring 311, the second ring 511 and the third ring 711, and to cover the first electrode. The nitrogen bismuth compound layers 42 and 61 on the region 32 and the second electrode region 52. Please refer to the ninth drawing, which is a schematic view showing the arrangement of the aperture of the MEMS element according to a preferred embodiment of the present invention. In the figure, an aperture 91 is formed by the third metal layer 62 penetrating downward to provide an adjustment as the amount of light entering. Referring to the tenth embodiment, there is shown a side view of a microelectromechanical device in accordance with a preferred embodiment of the present invention. In the figure, a ruthenium nitride compound layer 22 is formed on the ruthenium wafer 21, a first metal layer 23 is formed on the yttrium nitride compound layer 22, and the first metal layer 23 is patterned, and a nitrite is formed on the first metal layer 23. The compound layer 42, the second metal layer 43 is formed on the yttrium compound layer 42, and the second metal layer 43 is patterned, a ruthenium compound layer 61 is further formed on the second metal layer 43, and a third layer is formed on the yttrium compound layer 61. The metal layer 62, and the third metal layer 62 is patterned, and the unnecessary portions are finally etched away. Referring to Figure 11 , a flow chart of a method of manufacturing a microcomputer electrical component according to another preferred embodiment of the present invention is shown. The process step is as follows: Step S1: providing a substrate; Step Sib: forming a first insulating layer on the substrate; Step Sic: forming a first adhesive layer on the first insulating layer on the first adhesive layer; Step Sid: Forming a first metal layer, 9 1314347 Step Sldl: patterning and engraving the first adhesive layer and the first metal to form a first operation region and a first electrode region, and the first operation region has a first circle; the step Sle: (4) a substrate under the first operation area to form a window; Step Slf: forming a second insulation layer on the first metal layer; Step Slg: forming a second adhesion layer on the second insulation layer; Step S1h: forming a second a metal layer on the second adhesive layer; [Slhn patterned and _ second adhesive layer and second metal layer = into a second operating area and a second electrode area, the second operating area: area overlap brother And the second electrode region does not form a third insulating layer with the first electrode step Sli. on the second metal layer; step S1j. forms a third adhesive layer on the third insulating layer; step Sik. forms a third a metal layer on the third adhesive layer; step Slk l : patterning and etching the second formation: falling into the alpha flute ~ layer and the red metal layer to take less music and the second electrode area, the third ring, and overlapping the second ring'' °. a second circular region and a second electrode region are overlapped; the second electrode region of the soil is not combined with the first electrode and the first insulating layer and the second insulating layer (four) are formed to form a circle with the first ring and the first ring a ring, and an insulating layer covering the first electrode region of the first electrode and the second and the second electrode. For the nitrogen dream combination: plate seconds: round 'the material of each insulation layer is better. · Even, the adhesion layer is preferably titanium or chromium, each Ϊ314347 metal layer is better to be Ming or gold, in addition, more A Nitrile compound layer is formed under the substrate, and at least one aperture is provided to provide adjustment as the amount of light incident. Further, a printed circuit board is provided for erecting the MEMS element, and the printed circuit board is placed in an electron microscope. Referring to Figures 12 through 18, there is shown a schematic view of a microelectromechanical device forming process in accordance with another preferred embodiment of the present invention. In this embodiment, the twelfth figure shows the steps S1a to Sid, wherein the step S1 is to first clean the germanium wafer a by the method of generally cleaning the substrate, and the step Sib is to chemically vapor deposit the low-stress nitrogen nitride compound by φ. The layer a2 is on the tantalum wafer a ", the step Sic is performed on the first adhesive layer a3 on the nitriding compound-layer a2 by the bonding technology, and the step Sid is first coated with the first metal layer a4 by the coating technique. Adhesive layer a3. The thirteenth figure shows the pattern of the first adhesive layer a3 and the first metal layer a4 being patterned in the step Sld1. The patterning is achieved by techniques such as general photoresist, development, etching, etc., and the pattern is not described herein. A first operation region b1 having a first ring b11 and a first electrode region b2 are formed. The fourteenth embodiment shows the steps Sle to Slh, wherein the step Sle etches the 矽 wafer a1 under the φth operation area bl to form a window d, and the step Slf forms the nitrous oxide compound layer c2 by chemical vapor deposition. On the metal layer a4, the step S11 is plated with the second adhesive layer c3 on the yttrium compound layer c2, and the step S1h is plated with the second metal layer c4 on the second adhesive layer c3. The fifteenth figure shows the pattern of patterning the second adhesive layer c3 and the second metal layer c4 in the step S1H. This step is achieved by the same technique as the thirteenth figure, and the pattern pattern is formed with the second ring dll. The second operation area d1 and the second electrode area d2. The sixteenth figure shows the steps Sli~Slk, wherein the step Sli is to chemically vapor-deposit the nitrogen bismuth compound layer el on the second 11 1314347 metal layer c4, and the step SI j is applied to the third adhesive layer e2 by the coating technique. On the layer of nitrogen bismuth compound el, step Slk is plated with a third metal layer e3 on the third adhesive layer e2 by a plating technique. The seventeenth figure shows the pattern of patterning the third adhesive layer e2 and the third metal layer e3 in the step Slkl. This step is achieved by the same technique as in the thirteenth figure, and the pattern pattern is formed with the third ring Π1. The third operation area fl and the third electrode area f2. The eighteenth figure shows that the step Sim etches the nitrogen argon compound layers a2, c2 and el to form the same and overlapping ring as the first ring b11, the second ring dll and the third ring Π1, and the etching covers the Nitrogen compound layers c2 and el on one electrode region b2 and second electrode region d2. Referring to Figure 19, there is shown a side view of a microcomputer electrical component in accordance with another preferred embodiment of the present invention. In the figure, a silicon nitride compound layer a2 is formed on the germanium wafer a1, a first adhesive layer a3 is formed on the I-light compound layer a2, a first metal layer a4 is formed on the first adhesive layer a3, and the first adhesive layer is patterned. A3 and the first metal layer a4' further form a nitriding compound layer c2 on the first metal layer a4, a second adhesive layer c3 is formed on the yttrium compound layer c2, and a second metal layer c4 is formed on the second adhesive layer c3. And patterning the second adhesive layer c3 and the second metal layer c4, forming a yttrium compound layer el on the second metal layer c4, forming a third adhesive layer e2 on the yttrium compound layer el, forming on the third adhesive layer e2 The third metal layer e3, and the third adhesive layer e2 and the third metal layer e3 are patterned, and the unnecessary portion is finally etched away. The above chemical vapor deposition is carried out in a conventional chemical vapor deposition technique, an atmospheric pressure CVD (APCVD) system, a low pressure chemical vapor deposition (LPCVD) system or a plasma assisted chemical vapor deposition. (plasma enhanced CVD, 12 1314347 PECVD) system, etc., the technology of plating m in the conventional application is electron gun (E-gun) ^ mm (sputter) (thermal coater), etc. 'M engraved in the conventional and (four) (four) money _ ' Dry wire etching or reactive ion etching (RiE), etc., the present invention applies the aforementioned microelectromechanical techniques to make microelectromechanical components. ^ Schematic diagram of the iyQ βρ device. Illustrative, optical;:: the optical of the application of the method. Its t, the first substrate 82 - the plate 82 and the microelectromechanical component - an open circuit coffee, provided as an electronic circuit board, which has a first electrical component (10) Can be static 81 slit (four) whole, the micro-machine heart changes electron microscope 81 issued = 82 on the < electron beam 84 phase. , such as the means of the hand board, there is glue, welding or
、=固定於印刷電路板等，舉凡各種將微機電 〇柃電子顯微鏡上。、奴均可應用於本發明，藉此 卜二例：:而非為限制性者。任何未脫離 4附之申；專利之等效修改或變更’均 1314347 【圖式簡單說明】 第一圖係為本發明一較佳實施例之微機電元件之製造方 法之流程圖； 第二圖係依據第一圖本發明一較佳實施例之微機電元件 形成過程之示意圖； 第三圖係依據第一圖本發明一較佳實施例之微機電元件 形成過程之不意圖， 第四圖係依據第一圖本發明一較佳實施例之微機電元件 形成過程之示意圖； 第五圖係依據第一圖本發明一較佳實施例之微機電元件 形成過程之示意圖； 第六圖係依據第一圖本發明一較佳實施例之微機電元件 形成過程之示意圖； 第七圖係依據第一圖本發明一較佳實施例之微機電元件 形成過程之示意圖； 第八圖係依據第一圖本發明一較佳實施例之微機電元件 形成過程之示意圖； 第九圖係為本發明一較佳實施例之微機電元件設置光圈 之不意圖， 第十圖係為本發明一較佳實施例之微機電元件之侧視圖； 第十一圖係為本發明另一較佳實施例之微機電元件之製 造方法之流程圖； 14 1314347 第十二圖係依據第十一圖本發明另一較佳實施例之微機 電元件形成過程之示意圖； 第十三圖係依據第十一圖本發明另一較佳實施例之微機 電元件形成過程之示意圖； 第十四圖係依據第十一圖本發明另一較佳實施例之微機 電元件形成過程之示意圖； 第十五圖係依據第十一圖本發明另一較佳實施例之微機 電元件形成過程之示意圖； 第十六圖係依據第十一圖本發明另一較佳實施例之微機 電元件形成過程之示意圖； 第十七圖係依據第十一圖本發明另一較佳實施例之微機 電元件形成過程之不意圖， 第十八圖係依據第十一圖本發明另一較佳實施例之微機 電元件形成過程之不意圖， 第十九圖係為本發明另一較佳實施例之微機電元件之側 視圖，以及 第二十圖係為本發明再一較佳實施例之光學裝置之示意 圖。 15 1314347 【主要元件符號說明】, = fixed on printed circuit boards, etc., all kinds of micro-electromechanical 〇柃 electron microscope. Both slaves can be used in the present invention, whereby two examples are: instead of being restrictive. Equivalent Modification or Modification of Patent [Equivalent Modification or Modification of Patent] 1314347 [Simplified Description of the Drawings] The first drawing is a flow chart of a manufacturing method of a microelectromechanical element according to a preferred embodiment of the present invention; BRIEF DESCRIPTION OF THE DRAWINGS FIG. 3 is a schematic view showing a process of forming a microelectromechanical device according to a first embodiment of the present invention; FIG. 3 is a schematic view showing a process of forming a microelectromechanical device according to a first embodiment of the present invention; BRIEF DESCRIPTION OF THE DRAWINGS FIG. 5 is a schematic view showing a process of forming a microelectromechanical device according to a preferred embodiment of the present invention; FIG. 5 is a schematic view showing a process of forming a microelectromechanical device according to a first embodiment of the present invention; BRIEF DESCRIPTION OF THE DRAWINGS FIG. 7 is a schematic view showing a process of forming a microelectromechanical device according to a preferred embodiment of the present invention; FIG. 7 is a schematic view showing a process of forming a microelectromechanical device according to a first embodiment of the present invention; BRIEF DESCRIPTION OF THE DRAWINGS FIG. 9 is a schematic view showing a process of forming a microelectromechanical device according to a preferred embodiment of the present invention; Side view of a microelectromechanical device according to a preferred embodiment of the present invention; FIG. 11 is a flow chart of a method for fabricating a microelectromechanical device according to another preferred embodiment of the present invention; 14 1314347 1 is a schematic view showing a process of forming a microelectromechanical device according to another preferred embodiment of the present invention; and a thirteenth view showing a process of forming a microelectromechanical device according to another preferred embodiment of the present invention; FIG. 11 is a schematic view showing a process of forming a microelectromechanical device according to another preferred embodiment of the present invention; FIG. Figure 16 is a schematic view showing a process of forming a microelectromechanical device according to another preferred embodiment of the present invention; and Fig. 17 is a view showing the formation of a microelectromechanical device according to another preferred embodiment of the present invention. 18 is a schematic diagram of a microelectromechanical device forming process according to another preferred embodiment of the present invention, and FIG. 19 is a microcomputer according to another preferred embodiment of the present invention. Side view of the element, and then twenty FIG lines of a schematic view of an optical device of a preferred embodiment of the embodiment of the present invention. 15 1314347 [Description of main component symbols]
S11〜S19 :流程步驟； 84 ： 21 ·碎晶0， 91 ： 22 :氮矽化合物層； Sla' 2 3 :第一金屬層； al : 31 :第一操作區； a2 ： 311 :第一圓環； a3 · 32 :第一電極區； a4 · 41 :窗； bl ： 42 :氮矽化合物層； bll 43 :第二金屬層； b2 ： 51 :第二操作區； cl · 511 :第二圓環； c2 ： 52 ··第二電極區； c3 ： 61 :氮矽化合物層； c4 : 62 :第三金屬層； dl ： 71 :第三操作區； dll 711 :第三圓環； d2 72 :第三電極區； el 80 :光學裝置； e2 81 :電子顯微鏡； e3 82 :第一基板； fl 821 :第一開孔； fll 83 :微機電元件； f2 電子束； 開孔； ^ S1 m :流程步驟； 珍晶圓， 氮矽化合物層； 第一黏著層； 第一金屬層； 第一操作區； :第一圓環； 弟·一電極區， 自， 氮矽化合物層； 第二黏著層； 第二金屬層； 第二操作區； :第二圓環； 弟二電極區， 氮石夕化合物層； 第三黏著層； 第三金屬層； 第三操作區； :第三圓環；以及 第三電極區。 16S11~S19: process steps; 84: 21 · fragmentation 0, 91: 22: nitrogen ruthenium compound layer; Sla' 2 3 : first metal layer; al: 31: first operation zone; a2: 311: first circle Ring; a3 · 32 : first electrode region; a4 · 41 : window; bl : 42 : nitrogen ruthenium compound layer; bll 43 : second metal layer; b2 : 51 : second operation region; cl · 511 : second circle Ring; c2: 52 ··second electrode region; c3: 61: nitrogen ruthenium compound layer; c4: 62: third metal layer; dl: 71: third operation region; dll 711: third ring; d2 72: Third electrode region; el 80: optical device; e2 81: electron microscope; e3 82: first substrate; fl 821: first opening; fll 83: microelectromechanical element; f2 electron beam; opening; ^ S1 m : Process step; Jane wafer, yttrium nitride compound layer; first adhesive layer; first metal layer; first operation region; first ring; brother-electrode region, self-nitride compound layer; second adhesive layer a second metal layer; a second operating region; a second ring; a second electrode region, a nitrous oxide compound layer; a third adhesive layer; a third metal layer; a third operating region; a third ring; and a third electrode region. 16