1313965 九、發明說明： 【發明所屬之技術領域】 本發明係有關於一種無線通訊系統，特別係指 一種互補式金氧半場效電晶體切換開關之電路結構 及其製程結構。 【先前技術】 由於科技的發展，無線通訊系統已廣泛應用於 • 日常生活中。具有無線連結功能的通訊產品已變成 市場上的殺手級應用。例如GSM、DECT、Wi-Fi、 Bluetooth等無線通訊技術已廣泛應用於通訊產品 上，成為消費者生活中不可或缺的一部分。消費者 ' 對於通訊產品的需求量越來越大，所要求的功能與 - 通訊品質也越來越高，使得許多製造商必須花更多 的心思來設計這些通訊產品，以引起更多消費者的 青睞。 I 射頻切換開關是無線通訊產品的關鍵零組件之 一。目前的市場上，以神化録（GaAs)製程來製造射 頻切換開關為主流，然而使用GaAs的基板來製作射 頻切換開關，會耗費較高的製造成本且無法與其他 射頻及基頻晶片整合成單晶片。另外，互補式金氧 半場效電晶體（complementary metal oxide semiconductor, CMOS)的製程技術精進快速，目前 — CMOS製程的射頻積體電路特性已可媲美GaAs製程 的射頻積體電路，且CMOS成本較GaAs製程的成本 低廉。故有逐漸以CMOS製程的射頻切換開關，來1313965 IX. Description of the Invention: [Technical Field] The present invention relates to a wireless communication system, and more particularly to a circuit structure and a process structure of a complementary metal oxide half field effect transistor switch. [Prior Art] Due to the development of technology, wireless communication systems have been widely used in daily life. Communication products with wireless connectivity have become the killer applications on the market. Wireless communication technologies such as GSM, DECT, Wi-Fi, and Bluetooth have been widely used in communication products and become an indispensable part of consumer life. Consumers' demand for communication products is growing, the required functions and communication quality are getting higher and higher, making many manufacturers have to spend more time designing these communication products to attract more consumers. Favor. I RF switch is one of the key components of wireless communication products. In the current market, the manufacture of RF switching switches is dominated by the Dehua Recording (GaAs) process. However, the use of GaAs substrates to fabricate RF switching switches consumes high manufacturing costs and cannot be integrated into other RF and baseband chips. Wafer. In addition, the process technology of complementary metal oxide semiconductor (CMOS) is fast and fast. At present, the characteristics of the RF integrated circuit in the CMOS process are comparable to those of the GaAs process, and the CMOS cost is higher than that of GaAs. The cost of the process is low. Therefore, there is a radio frequency switch that gradually takes a CMOS process.
Cs) 1313965 取代GaAs製程之射頻切換開關的趨勢。由於射頻切 換開關中的金氧半場效電晶醴（metal oxide semiconductor field-effect transistor, MOSFET)中，皆 有連結於基板（substrate)之端點（terminal)，如第一圖 所示，當射頻訊號從源極（source)S或汲極（drain)D 進入MOSFET時，其會透過幾個路徑（path)，如CGS、 Cgd、Cgb、Cdb、Csb ’ Ά漏到基板B上’造成射頻 訊號能量的損耗，即為插入損耗（insertion loss)，且 當射頻訊號的頻率越高，功率越大時，洩漏在基板B 上的能量就越多。 為了達到可量產的射頻切換開關之目的，必須 要考慮的就是射頻切換開關的插入損耗與功率掌握 能力。在美國專利 U.S. No.6,882,829 B2 ( Integrated circuit incorporating RF antenna switch and power amplifier)中，利用浮動基板（floating substrate)的結 構，來降低射頻切換開關的插入損耗，及改善其絕 緣度，然而此會衍生出電路栓鎖（latch-up)的問題， 且目前的架構只能運用於低功率的產品中。 在美國專利 U.S. No.6,804,502 (Switch circuit and method of switch radio frequency signals)中，係 利用絕緣層晶片（silicon-on-insulator，SOI)技術，將 一對切換電晶體及一對分流（shunting)電晶體，作在 射頻切換開關中，根據切換控制電壓來切換射頻切 換開關的動作，以進一步地來改善插入損耗、開關 的絕緣度及ldB增益壓縮點（ldB gain compression point)。然而，SOI技術的成本太高，且同GaAs開 1313965 關樣會面臨與其它晶片整合的問題 技術並無法成為市場上的主流。 &杈的 【發明内容】 本發明目的，在於提供一種互 電晶體切換開關之電路結構及其製程：m 開關中利用高阻抗、串聯電晶體單元“在刀換 來改善絕緣度、功率掌握能力、工作頻t工：隹 積度，並降低插入損耗、製 見疋件木 積，以解決習知技術中的缺點。切換開關的面 依據本發明所提互補式金 切換開關之電路結構及其製程結構第n 中•切換開關之電路結構包含：訊號共用端；例 訊=徑i第，路徑。第-訊號路：ί含ί: 阻抗3號::=晶體單元及連接於基板端 點之同阻抗第一汛唬路徑包含第二 — 訊號串聯電晶體單元及連接於基板端點之。阻弟- 播，據本發明所提出之互補式金氧半場電曰體 切換開關之電路結構及其製程結構，第二 上述：-實施例的切換開關之電路結構更：：：二 :.苐一訊號路徑包含第-訊號分流電晶體單元。 苐二訊號路徑包含第二訊號分流電晶體 根據本發明所提出之互補式 切換開關之電路結構及其製程、=乳以= 上述第二實施例中之第-訊號串聯電晶體 二訊號分流電晶體單元’分別以第一共振電路單元 1313965 及第二共振電路單元來取代。 根據本發明所提出之互補式金氧半場效電晶體 切換開關之電路結構及其製程結構，第四實施例之 切換開關之電路結構係利用傳輸線作為第二實施例 中之共用訊號端、第一訊號端及第二訊號端之間的 連、、、。媒；|，來達成高功率掌握能力及具有寬頻帶切 換能力之切換開關的目的。 根據本發明所提出之互補式金氧半場效電晶體 切換開關之電路結構及其製程結構，第五實施例之 切”電路結構包含：訊號共用端、第一訊號 路徑及第二訊號路徑。第一訊號路徑包含第一訊號 ，、第一訊號分流電晶體單元及連接於基板端點之 =阻抗。第二訊號路徑包含第二訊號端、第二訊號 2流電晶體單元及連接於基板端點之高阻抗。利用 輸線作為共用訊號端、第一訊號端及第二訊號端 f間的連結媒介，來達成高功率掌握能力及寬頻的 刀換能力之切換開關的目的。 、 根據本發明所提出之互補式金氧半場效電晶體 刀，開關之電路結構及其製程結構，第六實施例之 、=、開關之製程結構包含基板、複數個及 ^接於基板端點之高阻抗。其中以CMOS製程來設 :切換開關的電路，並製作於同一個基板上，其中 雷：：入如深入井等之製程技術’以及金氧半場效 曰曰-之間須相隔一間距，以達成高功率掌握能力。 切換^本發明所提出之互補式金氧半場效電晶體 、巧關之電路結構及其製程結構，第七實施例之 (S) 8 1313965 ，換開關之製程結構較第六實施例更進一步包含在 每一間距中加入溝槽，以達到高絕緣度的目的。 根據本發明所提出之互補式金氧半場效電晶體 切換開關之電路結構及其製程結構，第八實施例係 以；BiCMOS製程來取代第七實施例之CM〇s製程， ，中利用加入如掩埋層、深溝槽等製程技術，以及 母個金氧半％效電晶體之間須相隔一間距，以達到 高功率掌握能力。 根據本發明所提出之互補式金氧半場效電晶體 切換開關之電路結構及其製程結構，第九實施例較 第八實施例更進一步包含：在每一間距中加入溝 槽’以達到兩絕緣度的目的。 【實施方式】 為了解決過去利用GaAs製程來設計射頻切換開 關，造成製造成本過高且無法與其它晶片整合的問 題，本發明係以CM〇s或雙極性互補式金氧半場效電 晶體（biP〇lar CM0S，BiCM〇s)的製程來製備切換開 關，並應用諸多方法以提升⑽s基板端點之阻抗， 在此統稱基板工程（substrate engineering)，來 設計切換開關。並可將此切換開關與其他射頻及美 頻晶片整合成單晶片，實現在標準的矽基^ (whcon substrate)上，包含低阻值與高阻值的矽 基板，來達到降低成本的目的。 除2外，本發明内容適用於所有的訊號切換 開關，尤其適用於射頻訊號之切換開關，本發明可 1313965 應用於所有切換開關的結構，例如單刀雙擲結構的 切換開關及多刀多擲結構的切換開關等，本發明内 容以單刀雙擲的切換開關為例。 凊參考第二圖所示’其係為本發明内容之切換 開關之電路結構示意圖。第一實施例之切換開關之 電路結構200，包含：一訊號共用端（signal c〇mm〇n P〇rt)210、一第一訊號路徑（first signal阳让）及 一第二訊號路徑（second Signal path)。第一訊號 路控包含第一訊號端（first signal port )220、一 第一訊號串聯電晶體單元240及連接於基板端點之 咼阻抗z，第二訊號路徑包含一第二訊號端（sec〇nd signal p〇rt)230、一第二訊號串聯電晶體單元25〇及 連接於基板端點之高阻抗Z。 舉例來說’訊號共用端210 ’係根據一控制訊號 SW或一反向控制訊號SW_，來決定傳送訊號的路 徑。第一訊號串聯電晶體單元240，其連結於訊號共 用端210與第一訊號端220之間’係根據反向控制 訊號SW— ’來決定是否導通。第二訊號串聯電晶體 單元250,其連結於訊號共用端21〇與第二訊號端 230之間’係根據控制訊號SW，來決定是否導通。 阻抗 Z，其係為尚阻抗的網路’可以由電减盘電容所 組成’即電感電谷槽（LC-tank) ’可以只由主動或被 動電感組成’或只由電阻組成。阻抗Z用以降低射 頻訊號的損失，並提高功率掌握能力。 其中’控制訊號sw係一控制電壓（c〇ntr〇1 voltage)，反向控制訊號SW—則為控制訊號sw之反 1313965 向（inversion)，亦即反向控制訊號SW_為一反向控制 電壓（reverse control voltage)。第一訊號串聯電晶體 單元240及第二訊號串聯電晶體單元250，係由一個 或複數個M0SFET所組成。本實施例皆以兩個 M0SFET為例，分別以MOSFET M41與M42組成第 一訊號串聯電晶體單元240,以MOSFET M51與M52 組成第二訊號串聯電晶體單元250,且MOSFET M41 與M42以串聯的方式排列，MOSFET M51與M52也 以串聯的方式排列。 當控制訊號SW啟動時^使得弟二訊號串聯電晶 體單元250導通，即MOSFET M51及M52導通，第 二訊號則可以由第二訊號端230傳送至訊號共用端 210。相對地，反向控制訊號8界_係關閉的，故第一 訊號串聯電晶體早元240係截止的’也就是說’ MOSFET M41與M42截止，使得第一訊號無法由訊號 共用端210傳送至第一訊號端220。 同樣地，當反向控制訊號SW_啟動時，使得第一 訊號串聯電晶體單元240導通，即MOSFET M41與M42 導通，第一訊號會由訊號共用端210傳送至第一訊 號端220。相對地，控制訊號SW係關閉的，故第二 訊號串聯電晶體單元250截止，MOSFET M51與M52 亦截止，使得第二訊號無法由第二訊號端230傳送 至訊號共用端210來輸出。 本發明再提供第二實施例，如第三圖所示，其 係為本發明内容之射頻切換開關之電路結構示意 圖。射頻切換開關之電路結構300，包含：一訊號共 1313965 用端310、一第一訊號路徑及一第二訊號路徑。第一 訊號路徑包含一第一訊號端320、一第一訊號串聯電 晶體單元340、一第一訊號分流電晶體單元370及連 接於基板端點之高阻抗Z，第二訊號路徑包含一第二 訊號端330、一第二訊號串聯電晶體單元350、一第 二訊號分流電晶體單元380及連接於基板端點之高 阻抗Z。 第一訊號串聯電晶體單元340、第一訊號分流電 晶體單元370、第二訊號串聯電晶體單元350及第二 訊號分流電晶體單元380，分別係由一個或複數個 MOSFET所組成，在本實施例中，以MOSFET M41 與M42組成第一訊號串聯電晶體單元340，及以 MOSFET M81與M82組成第二訊號分流電晶體單元 380 為例，且 MOSFET M41 與 M42 及 MOSFET M81 與M82以串聯的方式排列。而以MOSFET M71組成 第一訊號分流電晶體單元370，及以MOSFET M51 組成第二訊號串聯電晶體單元350為例。並且，訊 號共用端310、第一訊號端320、第二訊號端330、 第一訊號串聯電晶體單元340、第二訊號串聯電晶體 單元350及連接於基板端點之高阻抗Z，功能如第二 圖所示。 第一訊號分流電晶體單元370，其以分流的結 構，置於第一訊號端320與接地之間，係根據控制 訊號SW，來決定是否導通。第二訊號分流電晶體單 元3 80，其置於第二訊號端330與接地之間，係根據 反向控制訊號SW_，來決定是否導通。 12Cs) 1313965 A trend to replace RF switching switches in GaAs processes. Since the metal oxide semiconductor field-effect transistor (MOSFET) in the RF switching switch has a terminal connected to the substrate, as shown in the first figure, when the RF When the signal enters the MOSFET from the source S or the drain D, it will cause RF signals through several paths (such as CGS, Cgd, Cgb, Cdb, Csb ' leaking onto the substrate B). The loss of energy is the insertion loss, and the higher the frequency of the RF signal, the greater the power, the more energy leaks on the substrate B. In order to achieve the purpose of a mass-produced RF switch, it is necessary to consider the insertion loss and power mastery of the RF switch. In the integrated circuit of the RF antenna switch and power amplifier, the structure of the floating substrate is used to reduce the insertion loss of the RF switch and improve the insulation. The problem of latch-up is out of the circuit, and the current architecture can only be used in low-power products. In Switch circuit and method of switch radio frequency signals, a pair of switching transistors and a pair of shuntings are used by silicon-on-insulator (SOI) technology. The crystal is used in the RF switching switch to switch the operation of the RF switching switch according to the switching control voltage to further improve the insertion loss, the insulation of the switch, and the ldB gain compression point. However, the cost of SOI technology is too high, and it will face the problem of integration with other chips in the same way as GaAs 113965. Technology cannot be the mainstream in the market. SUMMARY OF THE INVENTION The object of the present invention is to provide a circuit structure and a process for an inter-optical crystal switching switch: a high-impedance, series-connected transistor unit in the m-switch uses "in-knife exchange to improve insulation and power mastery." Working frequency: hoarding degree, and reducing insertion loss, seeing the wood product, to solve the shortcomings in the prior art. The circuit structure and the manufacturing process of the complementary gold switching switch according to the present invention Structure n: The circuit structure of the switch includes: signal sharing terminal; example signal = path i, path. - signal path: ί ί: impedance 3:: = crystal unit and the same point connected to the substrate The first path of the impedance includes a second signal-connected transistor unit and a terminal connected to the substrate. The circuit structure and process of the complementary gold-oxygen half-field electric switch are proposed according to the present invention. Structure, the second above: - The circuit structure of the switch of the embodiment is more: :: 2: The first signal path includes the first signal splitting transistor unit. The second signal path includes the second signal splitting The circuit structure of the complementary switching switch according to the present invention and the process thereof, = milk = the first-signal series transistor two-signal shunting transistor unit in the second embodiment described above, respectively, the first resonant circuit unit The circuit structure of the complementary MOS field-effect transistor switching switch and the process structure thereof according to the present invention are the circuit structure of the switch of the fourth embodiment using the transmission line as the second In the embodiment, the connection between the common signal end, the first signal end and the second signal end, and the media; |, achieve the purpose of high power mastering capability and a switch having wide band switching capability. The circuit structure and the process structure of the proposed complementary MOS field-effect transistor switching switch, the circuit structure of the fifth embodiment includes: a signal sharing terminal, a first signal path and a second signal path. The first signal path includes a first signal, a first signal shunting the transistor unit, and an impedance connected to the end of the substrate. The second signal path includes a second signal terminal, a second signal transistor, and a high impedance connected to the end of the substrate. The transmission line is used as a connection medium between the common signal terminal, the first signal terminal and the second signal terminal f to achieve the purpose of high power mastering capability and wide-switching tool switching capability. According to the present invention, the complementary MOS field-effect transistor, the circuit structure of the switch and the process structure thereof, the process structure of the switch of the sixth embodiment includes the substrate, the plurality of terminals, and the end points of the substrate High impedance. Among them, the CMOS process is used to: switch the circuit of the switch and make it on the same substrate, in which the lightning:: into the process technology such as deep wells and the golden oxide half field effect - must be separated by a distance to achieve High power mastery. Switching to the complementary MOS field-effect transistor of the present invention, the circuit structure of the circuit and the process structure thereof, (S) 8 1313965 of the seventh embodiment, the process structure of the switch is further included than the sixth embodiment Grooves are added to each of the spaces to achieve high insulation. According to the circuit structure and process structure of the complementary MOS field-effect transistor switching switch proposed by the present invention, the eighth embodiment replaces the CM 〇s process of the seventh embodiment with a BiCMOS process, The process technology such as buried layer and deep trench, and the parent gold oxide half-effect transistor must be separated by a distance to achieve high power control capability. According to the circuit structure and process structure of the complementary MOS field-effect transistor switching switch according to the present invention, the ninth embodiment further includes: adding a trench in each pitch to achieve two insulations The purpose of the degree. [Embodiment] In order to solve the problem of designing a radio frequency switching switch by using a GaAs process in the past, the manufacturing cost is too high and cannot be integrated with other wafers, the present invention is a CM 〇s or a bipolar complementary MOS field effect transistor (biP). 〇lar CM0S, BiCM〇s) process to prepare the switch, and apply a variety of methods to enhance the impedance of the (10)s substrate end point, collectively referred to as substrate engineering, to design the switch. The switch can be integrated into other single-chip wafers and other RF and US-made chips to achieve a low-resistance and high-resistance 矽 substrate on a standard whcon substrate for cost reduction. In addition to 2, the present invention is applicable to all signal switching switches, and is particularly suitable for switching switches of radio frequency signals. The present invention can be applied to the structure of all switching switches, such as single-pole double-throw structure switching switches and multi-tool multi-throw structures. The switch or the like of the present invention is exemplified by a single-pole double-throw switch. Referring to the second figure, it is a schematic diagram of the circuit structure of the switching switch of the present invention. The circuit structure 200 of the switch of the first embodiment includes: a signal sharing terminal (signal c〇mm〇n P〇rt) 210, a first signal path (first signal yang) and a second signal path (second) Signal path). The first signal path includes a first signal port 220, a first signal series transistor unit 240, and a 咼 impedance z connected to the end of the substrate, and the second signal path includes a second signal end (sec〇) The nd signal p〇rt) 230, a second signal series transistor unit 25, and a high impedance Z connected to the end of the substrate. For example, the 'signal sharing terminal 210' determines the path for transmitting signals according to a control signal SW or a reverse control signal SW_. The first signal series transistor unit 240 is coupled between the signal common terminal 210 and the first signal terminal 220 to determine whether to conduct according to the reverse control signal SW_'. The second signal series transistor unit 250 is coupled between the signal sharing terminal 21A and the second signal terminal 230 to determine whether to conduct according to the control signal SW. The impedance Z, which is the impedance network, can be composed of an electric-reduction capacitor, that is, the LC-tank can be composed of only active or passive inductors or only by resistors. Impedance Z is used to reduce the loss of the RF signal and improve the power mastery. The 'control signal sw is a control voltage (c〇ntr〇1 voltage), and the reverse control signal SW is the inverse of the control signal sw 1313965, that is, the reverse control signal SW_ is a reverse control Reverse control voltage. The first signal series transistor unit 240 and the second signal series transistor unit 250 are composed of one or a plurality of MOSFETs. In this embodiment, two MOSFETs are taken as an example. The MOSFETs M41 and M42 respectively form a first signal series transistor unit 240, and the MOSFETs M51 and M52 form a second signal series transistor unit 250, and the MOSFETs M41 and M42 are connected in series. In a way, the MOSFETs M51 and M52 are also arranged in series. When the control signal SW is activated, the second signal series transistor unit 250 is turned on, that is, the MOSFETs M51 and M52 are turned on, and the second signal is transmitted from the second signal terminal 230 to the signal sharing terminal 210. In contrast, the reverse control signal 8 is turned off, so the first signal series transistor is terminated by the end of the 240, that is, the MOSFETs M41 and M42 are turned off, so that the first signal cannot be transmitted to the signal sharing terminal 210. The first signal terminal 220. Similarly, when the reverse control signal SW_ is activated, the first signal series transistor unit 240 is turned on, that is, the MOSFETs M41 and M42 are turned on, and the first signal is transmitted from the signal sharing terminal 210 to the first signal terminal 220. In contrast, the control signal SW is turned off, so that the second signal series transistor unit 250 is turned off, and the MOSFETs M51 and M52 are also turned off, so that the second signal cannot be transmitted from the second signal terminal 230 to the signal sharing terminal 210 for output. The present invention further provides a second embodiment, as shown in the third figure, which is a schematic diagram of the circuit structure of the radio frequency switching switch of the present invention. The circuit structure 300 of the RF switch includes: a signal 1313965 terminal 310, a first signal path and a second signal path. The first signal path includes a first signal terminal 320, a first signal series transistor unit 340, a first signal splitting transistor unit 370, and a high impedance Z connected to the end of the substrate, and the second signal path includes a second The signal terminal 330, a second signal series transistor unit 350, a second signal splitting transistor unit 380, and a high impedance Z connected to the end of the substrate. The first signal series transistor unit 340, the first signal splitting transistor unit 370, the second signal series transistor unit 350 and the second signal splitting transistor unit 380 are respectively composed of one or a plurality of MOSFETs, in this embodiment In the example, the first signal series transistor unit 340 is composed of MOSFETs M41 and M42, and the second signal shunt transistor unit 380 is composed of MOSFETs M81 and M82, and the MOSFETs M41 and M42 and the MOSFETs M81 and M82 are connected in series. arrangement. Taking the MOSFET M71 as the first signal shunt transistor unit 370 and the MOSFET M51 as the second signal series transistor unit 350 as an example. Moreover, the signal sharing terminal 310, the first signal terminal 320, the second signal terminal 330, the first signal series transistor unit 340, the second signal series transistor unit 350, and the high impedance Z connected to the end of the substrate function as The two figures are shown. The first signal shunting transistor unit 370 is disposed in a shunted configuration between the first signal terminal 320 and the ground, and determines whether to conduct according to the control signal SW. The second signal splitting transistor unit 380 is disposed between the second signal terminal 330 and the ground, and determines whether to conduct according to the reverse control signal SW_. 12
Cs) 1313965 當控制訊號sw啟動時，使得第二訊號串聯電晶 體單元350及第一訊號分流電晶體單元370導通， 即MOSFET M51、M71導通。當第二訊號串聯電晶體 單元350導通時，第二訊號則可以由第二訊號端330 傳送至訊號共用端310來輸出。相對地，反向控制 訊號5¥_係關閉的，故第一訊號串聯電晶體單元340 與第二訊號分流電晶體單元380係截止的，也就是 說，MOSFET M41、M42、M81、M82 截止，使得第一訊 號會由已導通的MOSFET M71分流至接地。 同樣地，當反向控制訊號SW_啟動時，使得第一 訊號串聯電晶體早元3 4 0及弟二訊號分流電晶體早 元 380 導通，即 MOSFET M4卜 M42、M81、M82 導通， 則第一訊號則可以由訊號共用端310傳送至第一訊 號端320。相對地，控制訊號SW係關閉的，故第一 訊號分流電晶體單元370及第二訊號串聯電晶體單 元350截止，即MOSFET M71、M51截止，使得第二 訊號由第二訊號分流電晶體單元380分流至接地。 本發明再提供第三實施例，如第四圖所示，其 係為本發明内容之射頻切換開關之電路結構示意 圖。射頻切換開關之電路結構400，包含：一訊號共 用端410、一第一訊號路徑及一第二訊號路徑。第一 訊號路徑包含一第一訊號端420、一第一共振電路單 元461、一第一訊號分流電晶體單元470及連接於基 板端點之高阻抗Z。第二訊號路徑包含一第二訊號端 430、一第二訊號串聯電晶體單元450、一第二共振 電路單元462及連接於基板端點之高阻抗Z。 13 1313965 第一訊號分流電晶體單元470及第二訊號串聯 電晶體單元450，係由一個或複數個MOSFET所組 成，在本實施例中，第一訊號分流電晶體單元470 與第二訊號串聯電晶體單元450皆以一個MOSFET 為例，分別為MOSFET M71與M51。並且，訊號共 用端410、第一訊號端420、第二訊號端430、第一 訊號分流電晶體單元470、第二訊號串聯電晶體單元 450及連接於基板端點之高阻抗Z，功能如第三圖所 示。 第一共振電路單元461及第二共振電路單元 462，係為相同之共振電路單元，具有幾種排列方 式，如第四A圖至第四D圖所示，係由複數個 MOSFET、電感、電容及連接於基板端點之高阻抗Z 所組合而成，第一共振電路單元461以串聯的結構， 連結於訊號共用端410與第一訊號端420之間，第 二共振電路單元462則以分流的結構，連結於第二 訊號端430與接地之間。第一共振電路單元461與 第二共振電路單元462皆係由控制訊號SW所控制。 本實施例中之第一共振電路單元461及第二共振電 路單元462，皆以兩個MOSFET為例，分別為 MOSFET M61、M62。 舉例來說，當控制訊號SW啟動時，使得第一訊 號分流電晶體單元470、第二訊號串聯電晶體單元 450導通，及第一共振電路單元461與第二共振電路 單元462内之MOSFET M61與M62導通。使得第一共 振電路單元461及第二共振電路單元462形成高阻 1313965 抗並聯共振器（high-impedance parallel resonator)，且 第一共振電路單元461與第二共振電路單元462兩 端=第一端點及第二端點間呈現開路狀態（〇pen)。因 此第二訊號則可以由第二訊號端430傳送至訊號共 用端410來輪出，第一訊號則只能由已導通之Μ〇ϋ Μ71分流至接地。 同樣地，當控制訊號SW關閉時時，使得第一訊 號分流電晶體單元470、第二訊號串聯電晶體單^ 450、M0SFETM61及Μ62截止。使得第一共振電路單 兀461與第二共振電路單元術形成低阻抗串聯共 振器（low-impedance seriai resonat〇r)，且第一 : 路單元撕兩端之第一端點及第二端‘“J 一訊號通過，而第二共振電路單元462兩端之第一 端點及第二端點間將容許第二訊號通過。因此第一 訊號可以由訊號共用端41G傳送至第―訊號端42〇, 第二訊號可以經由第二共振電路單元462兩端之 一端點及第二端點傳送至接地。 除此之外，切換開關之電路結構200、300及400 可根據所需工作頻率及功率作適度的調整，且皆可 應用在高或低的工作頻率及高或低的功率 換開關中。 民刀 為了擴大切換開關之工作頻率，本 提供第四實施例第五圖所示，其係為本發明： 容之切換開關之電路結構示意圖。切換開關之電路 結構500包含：一訊號丑用嫂兹 ^爾-、用知510、一笫一訊號路獲 及一第二訊號路徑。第-訊號路徑包含-第—訊號 1313965 端520、一弟一訊號串聯電晶體單元540、一第一 ％ 號分流電晶體單元570及連接於基板端點之高阻抗 z。第二訊號路徑包含一第二訊號端53〇、一第二部 號串聯電晶體單元550、一第二訊號分流電晶體單元 5 80及連接於基板端點之高阻抗z。利用共面波導 (coplanar waveguide，CPW)及具有特性阻抗 (characteristic impedance)50 歐姆（〇hm)之傳輸線 (transmission line)TL，作為訊號共用端51〇、第一訊 號端520及第二訊號端530間之連結媒介（connecti〇n medium)，來達成高功率掌握能力及具有寬頻帶切換 能力之射頻切換開關的目的。 第一訊號分流電晶體單元570與第二訊號分流 電晶體單元580分別由複數個M0SFET所組成。在 本實施例中，以MOSFET M71、M72、M73與M74 組成第一訊號分流電晶體單元570，及以MOSFET M81、M82、M83與M84組成第二訊號分流電晶體 單元580為例。並且，訊號共用端51〇、第一訊號端 520、第二訊號端53〇、第一訊號串聯電晶體單元 540、第一訊號分流電晶體單元570、第二訊號串聯 電晶體單元550、第二訊號分流電晶體單元580及連 接於基板蠕點之高阻抗Z，功能同第三圖所示。 在訊號共用端510、第一訊號端520及第二訊號 端530間，使用具有特性阻抗5〇歐姆之傳輸線丁£ 作連結媒介，不僅可以大幅降低逆程損耗（return loss) ’也可以擴大射頻切換開關5〇〇的線性相位 (linear phase)的範圍與絕緣度。Cs) 1313965 When the control signal sw is activated, the second signal series transistor unit 350 and the first signal shunt transistor unit 370 are turned on, that is, the MOSFETs M51 and M71 are turned on. When the second signal series transistor unit 350 is turned on, the second signal can be transmitted from the second signal terminal 330 to the signal sharing terminal 310 for output. In contrast, the reverse control signal 5 is closed, so the first signal series transistor unit 340 and the second signal splitting transistor unit 380 are turned off, that is, the MOSFETs M41, M42, M81, and M82 are turned off. This causes the first signal to be shunted to ground by the turned-on MOSFET M71. Similarly, when the reverse control signal SW_ is activated, the first signal series transistor is terminated by the early element 3 4 0 and the second signal is divided by the transistor 380, that is, the MOSFET M4, M42, M81, M82 are turned on, then A signal can be transmitted from the signal sharing terminal 310 to the first signal terminal 320. In contrast, the control signal SW is turned off, so that the first signal shunt transistor unit 370 and the second signal series transistor unit 350 are turned off, that is, the MOSFETs M71 and M51 are turned off, so that the second signal is shunted by the second signal transistor unit 380. Divert to ground. The present invention further provides a third embodiment, as shown in the fourth figure, which is a schematic diagram of the circuit structure of the radio frequency switching switch of the present invention. The circuit structure 400 of the RF switch includes a signal common terminal 410, a first signal path and a second signal path. The first signal path includes a first signal terminal 420, a first resonant circuit unit 461, a first signal shunting transistor unit 470, and a high impedance Z connected to the end of the substrate. The second signal path includes a second signal terminal 430, a second signal series transistor unit 450, a second resonant circuit unit 462, and a high impedance Z connected to the end of the substrate. 13 1313965 The first signal splitting transistor unit 470 and the second signal series transistor unit 450 are composed of one or a plurality of MOSFETs. In this embodiment, the first signal shunting transistor unit 470 is connected in series with the second signal. The crystal unit 450 takes a MOSFET as an example, and is a MOSFET M71 and M51, respectively. Moreover, the signal sharing terminal 410, the first signal terminal 420, the second signal terminal 430, the first signal dividing transistor unit 470, the second signal series transistor unit 450, and the high impedance Z connected to the end of the substrate function as The three figures are shown. The first resonant circuit unit 461 and the second resonant circuit unit 462 are the same resonant circuit unit, and have several arrangements, as shown in the fourth to fourth D drawings, which are composed of a plurality of MOSFETs, inductors, and capacitors. And a high-impedance Z connected to the end of the substrate, the first resonant circuit unit 461 is connected in series with the signal sharing terminal 410 and the first signal terminal 420, and the second resonant circuit unit 462 is shunted. The structure is connected between the second signal end 430 and the ground. The first resonant circuit unit 461 and the second resonant circuit unit 462 are both controlled by the control signal SW. In the first embodiment, the first resonant circuit unit 461 and the second resonant circuit unit 462 are exemplified by two MOSFETs, which are MOSFETs M61 and M62, respectively. For example, when the control signal SW is activated, the first signal shunt transistor unit 470 and the second signal serial transistor unit 450 are turned on, and the MOSFET M61 in the first resonant circuit unit 461 and the second resonant circuit unit 462 are M62 is turned on. The first resonant circuit unit 461 and the second resonant circuit unit 462 are formed into a high-impedance parallel resonator, and the first resonant circuit unit 461 and the second resonant circuit unit 462 are both ends = first end An open state (〇pen) is present between the point and the second endpoint. Therefore, the second signal can be transmitted from the second signal terminal 430 to the signal sharing terminal 410, and the first signal can only be shunted to the ground by the turned-on Μ 71. Similarly, when the control signal SW is turned off, the first signal shunt transistor unit 470, the second signal series transistor unit 450, the MOSFETs 61 and Μ62 are turned off. The first resonant circuit unit 461 and the second resonant circuit unit are configured to form a low-impedance series resonator (low-impedance seriai resonat〇r), and the first: the first end and the second end of the two ends of the road unit are torn "The J signal passes, and the second signal is allowed to pass between the first end and the second end of the second resonant circuit unit 462. Therefore, the first signal can be transmitted from the signal sharing terminal 41G to the signal end 42. The second signal can be transmitted to the ground via one end and the second end of the second resonant circuit unit 462. In addition, the circuit structures 200, 300, and 400 of the switch can be based on the required operating frequency and power. Moderate adjustment, and can be applied to high or low operating frequency and high or low power switch. In order to expand the operating frequency of the switch, the fifth embodiment of the fourth embodiment is provided. The present invention is a schematic diagram of the circuit structure of the switch. The circuit structure 500 of the switch includes: a signal ugly 嫂 ^ 尔 -, using the knowledge 510, a signal path and a second signal path. Signal path The second signal path includes a second signal end, including a - signal 1313965 terminal 520, a first-and-one signal series transistor unit 540, a first %-numbered shunt transistor unit 570, and a high impedance z connected to the end of the substrate. 53〇, a second partial series transistor unit 550, a second signal splitting transistor unit 580, and a high impedance z connected to the end of the substrate. Using a coplanar waveguide (CPW) and having a characteristic impedance ( Characteristic impedance) 50 ohm (〇hm) transmission line TL, as the connection medium (connecti〇n medium) between the signal sharing terminal 51〇, the first signal terminal 520 and the second signal terminal 530, to achieve high power The purpose of the capability and the switching of the radio frequency switching switch having the broadband switching capability is as follows: the first signal shunting transistor unit 570 and the second signal shunting transistor unit 580 are respectively composed of a plurality of MOSFETs. In this embodiment, the MOSFET M71, M72, M73 and M74 form a first signal splitting transistor unit 570, and MOSFETs M81, M82, M83 and M84 form a second signal splitting transistor unit 580 as an example. The common terminal 51〇, the first signal terminal 520, the second signal terminal 53〇, the first signal series transistor unit 540, the first signal splitting transistor unit 570, the second signal series transistor unit 550, and the second signal shunt The function of the transistor unit 580 and the high impedance Z connected to the creepage of the substrate is the same as that shown in the third figure. Between the signal sharing terminal 510, the first signal terminal 520 and the second signal terminal 530, a characteristic impedance of 5 ohms is used. The transmission line can be used as a connecting medium, which not only can greatly reduce the return loss. It can also expand the range and insulation of the linear phase of the RF switching switch 5〇〇.
Cs) 16 1313965 基於上述達到寬頻帶切換能力之切換開關的目 的，本發明再提供第五實施例，如第六圖所示，其 係為本發明内容之切換開關之電路結構示意圖。切 換開關之電路結構600，包含：一訊號共用端610、 一第一訊號路徑及一第二訊號路徑。第一訊號路徑 包含一第一訊號端6 2 0、一第一訊號分流電晶體單元 670及連接於基板端點之高阻抗Z。第二訊號路徑包 含一第二訊號端630、一第二訊號分流電晶體單元 680及連接於基板端點之高阻抗Z。利用共面波導及 具有特性阻抗50歐姆之傳輸線TL，作為訊號共用端 610、第一訊號端620及第二訊號端630間之連結媒 介，來達成高功率掌握能力及具有寬頻帶切揍能力 之射頻切換開關的目的。 第一訊號分流電晶體單元670與第二訊號分流 電晶體單元680則分別由複數個MOSFET所組成。 在本實施例中，以MOSFET M71、M72、M73與M74 組成第一訊號分流電晶體單元670,及以MOSFET M81、M82、M83與M84組成第二訊號分流電晶體 單元680為例。並且，訊號共用端610、第一訊號端 620、第二訊號端630、第一訊號分流電晶體單元 670、第二訊號分流電晶體單元680及連接於基板端 點之高阻抗Z，功能同第二圖所示。 此外，阻抗Z以兩種方式加入上述之切換開關 中，一為以CMOS製程或BiCMOS製程製備於切換 開關之積體電路中（system on chip, SOC)，一為以外 接的方式製作在無線通訊的印刷電路板（printed 17 1313965 circuit board, PCB)上，再與射頻切換開關之積體電 路連結在一起。 為了同時達到提昇功率掌握能力及降低插入損 耗的目的，本發明利用基板工程來實現，而基板工 程包含：一為浮動基板（floating substrate)技術，一 為拉開元件間的距離，以達到提高元件間的絕緣度 的目的，一為在元件間插入N型井、P型井、深入N 型井、淺溝槽隔離技術（shallow trench isolation， STI)、掩埋層（buried layer)、沉積佈植（sinker implant) 及深溝槽（deep trench, DT)等，以增加元件間的絕緣 度。 請參考第七A圖所示，其係為本發明内容之切 換開關之製程結構的示意圖。第六實施例之切換開 關之製程結構700，包含基板、複數個MOSFET及 連接於基板端點之高阻抗Z。其中MOSFET以N型 的MOSFET來舉例，分別為MOSFET M70與M71， 且以BiCMOS製程來設計，作在同一個P型基板710 上，包含：深入N型井720、N型井730、P型井740、 N型重摻雜750、P型重摻雜760、源極/汲極770、 閘極780，且MOSFET M70與M71之間，相隔一間 距D。 阻抗Z，如第二圖至第六圖所示，以製作在射頻 切換開關之製程結構700中的方式，或從無線通訊 的印刷電路板上以外接的方式，透過P型重摻雜 760，連結至射頻切換開關之製程結構700中的 MOSFET M70、M71，來達到高功率掌握能力及低插 (S、 18 1313965 入損耗的目的。閘極780、源極/汲極770，可以係一 自動對準石夕化物（self-aligned silicide, salicide)。 在P型基板710中，置入深入N型井720後， 在P型基板710與P型井740之間，可形成較高的 阻抗，也增加了 MOSFET M70與M71之間的絕緣度 與阻抗，絕緣度可以高達45dB，甚至高於45dB，故 可以達到提高功率掌握能力，及降低插入損耗的目 的。 此外，在射頻切換開關之製程結構700中，將 MOSFET M70、M71之間的距離，適度地增加一間 距D，可以增加MOSFET M70與M71之間的阻抗， 來提高MOSFET M70與M71之間的絕緣度，以降低 插入損耗及增加功率掌握能力。相對地，射頻切換 開關之製程結構700中N型的MOSFET，亦可以P 型的MOSFET來取代。 為了進一步地闡述本發明之内容，本發明針對 切換開關之製程結構700，再提出第七實施例，請參 考第七B圖，在此實施例當中，切換開關之製程結 構700更進一步地包含了一溝槽（trench) 790。 溝槽790，係置入於射頻切換開關之製程結構 700中之MOSFET M70、M71之間的P型基板710 中，在縮小MOSFET M70、M71之間所增加的間距 D之下，仍然可以保持射頻切換開關之製程結構700 的高絕緣度，而此溝槽790，可以係一淺溝槽或一深 溝槽。如此一來，便可增加P型基板710上之 MOSFET的密集度，並縮小射頻切換開關的面積。 1313965 本發明為了更進一步地闡述本發明之内容，提 供第八實施例，請參考第八A圖，其係為本發明内 容之切換開關之製程結構之示意圖。切換開關之製 程結構800，包含基板、複數個MOSFET及連接於 基板端點之高阻抗Z。其中MOSFET以N型的 MOSFET來舉例，分別為MOSFET M80與M81，且 以BiCMOS製程來設計，作在同一個p型基板810 上，包含：N型掩埋層820、N型井830、P型井840、 閘極850、源極/汲極860、P型重摻雜870、深溝槽 DT，且MOSFET M80與M8 1之間，相隔一間距D。 在P型基板810中，置入N型掩埋層820後， 在N型掩埋層820的兩旁各對稱地增加了深溝槽 DT，如此一來，在MOSFET M80、M81之間，可形 成高阻抗並增加了 MOSFET M80、M81之間的絕緣 度，以達到提高功率掌握能力，及降低插入損耗的 目的0 為了進一步地闡述本發明之内容，本發明針對 切換開關之製程結構800，再提出第九實施例，請參 考第八B圖，在此實施例當中，切換開關之製程結 構800更進一步地包含了一溝槽（trench) 880。 溝槽880，係置入於切換開關之製程結構800中 之MOSFET M80、M81之間的P型基板810中，在 縮小MOSFET M80、M81之間的間距D之情況下， 仍然可以保持切換開關之製程結構800的高絕緣 度，而此溝槽880，可以係一淺溝槽或一深溝槽。如 此一來，便可增加P型基板810上之MOSFET的密 1313965 集度，並縮小切換開關的面積。 此外’本發明内容所诚古 插入損耗之切換開關之電d率f握能力及低 器的線性度。羊放大^以提昇功率放大 構及: I·本發明為一射頻切換開關之電路結 構及其裏;％結構，係利用^ 杯工浐0 用CM〇S或MCMOS製程及基 板寿壬且在射頻切換開關中加入一古阻f 槽，可增加CMOS基板端點的蛆扣β冋Ρ抗及溝 γ ,ν坦a 土极鳊點的阻抗及元件之間的阻 抗，以獒南絕緣度，降低插入損 及提升功率掌握能力。且降:二成本 整合。 J 〃現有的射頻晶片進行 本發明内谷所提供之優點在 BiCMOS的费鞀* π 4 t 不』用LMUb及 造的成本 十射頻切換開關，大幅降低了製 換開m容：提供之又一優點在於’在射頻切 改盖功聿^^入一尚阻抗，以達到降低插入損耗及 改吾功率掌握能力。 換明内容所提供之再—優點在於，在射頻切 提皁^ 了串聯多個_ΕΤ的結構，大幅地 抚门了功率掌握的能力。 換開2明::口!=構優點在於，在射頻切 接地。使用了刀&的結構，使訊號可以分流至 本么明内容所提供之再一優點在於，利用共振 1313965 特性，來達到低插入損耗與高功率掌握 内容所提供之再一優點在於，利用傳輪 訊號端、第一訊號端及第二訊號端之間 不僅降低了射頻切換開關的逆程損失 度，更增加了線性相位的範圍，以達到 能力及具有寬頻及多頻切換能力之射 目的。 、 内容所提供之又一優點在於，於射頻切 程結構中，將每個MOSFET間拉開—間 元件間的阻抗，以達到高的絕緣度。 電路單元的 能力。 本發明 、線作為共用 的連結媒介 與提升絕緣 高功率掌握 切換開關的Cs) 16 1313965 The present invention further provides a fifth embodiment based on the above-described switching switch for achieving broadband switching capability, as shown in the sixth figure, which is a circuit configuration diagram of the changeover switch of the present invention. The circuit structure 600 of the switch includes a signal sharing terminal 610, a first signal path and a second signal path. The first signal path includes a first signal terminal 620, a first signal shunting transistor unit 670, and a high impedance Z connected to the end of the substrate. The second signal path includes a second signal terminal 630, a second signal splitting transistor unit 680, and a high impedance Z connected to the end of the substrate. A coplanar waveguide and a transmission line TL having a characteristic impedance of 50 ohms are used as a connection medium between the signal sharing terminal 610, the first signal terminal 620 and the second signal terminal 630 to achieve high power mastering capability and wideband switching capability. The purpose of the RF switch. The first signal splitting transistor unit 670 and the second signal splitting transistor unit 680 are respectively composed of a plurality of MOSFETs. In the present embodiment, the first signal shunting transistor unit 670 is composed of MOSFETs M71, M72, M73 and M74, and the second signal shunting transistor unit 680 is composed of MOSFETs M81, M82, M83 and M84. The signal sharing terminal 610, the first signal terminal 620, the second signal terminal 630, the first signal shunting transistor unit 670, the second signal shunting transistor unit 680, and the high impedance Z connected to the end of the substrate have the same function. The two figures are shown. In addition, the impedance Z is added to the above-mentioned switching switch in two ways, one is a system on chip (SOC) prepared by a CMOS process or a BiCMOS process, and the other is fabricated in a wireless communication manner. The printed circuit board (printed 17 1313965 circuit board, PCB) is connected to the integrated circuit of the RF switch. In order to achieve the purpose of improving the power mastering ability and reducing the insertion loss, the present invention is realized by using substrate engineering, and the substrate engineering includes: a floating substrate technology, and a distance between the components to improve the components. The purpose of the insulation is to insert N-type wells, P-type wells, deep N-type wells, shallow trench isolation (STI), buried layer, and sedimentary implants between components. Sinker implant) and deep trench (DT) to increase the insulation between components. Please refer to FIG. 7A, which is a schematic diagram of the process structure of the switch of the present invention. The process structure 700 of the switching switch of the sixth embodiment includes a substrate, a plurality of MOSFETs, and a high impedance Z connected to the end of the substrate. The MOSFETs are exemplified by N-type MOSFETs, which are MOSFETs M70 and M71, respectively, and are designed in a BiCMOS process on the same P-type substrate 710, including: deep N-well 720, N-well 730, P-well 740, N-type heavily doped 750, P-type heavily doped 760, source/drain 770, gate 780, and a distance D between MOSFETs M70 and M71. The impedance Z, as shown in the second to sixth figures, is formed in the process structure 700 of the RF switching switch, or is externally connected from the wireless communication printed circuit board, through the P-type heavily doped 760, Connect to the MOSFETs M70 and M71 in the process structure 700 of the RF switch to achieve high power control and low insertion (S, 18 1313965 input loss. Gate 780, source / drain 770, can be automatically Self-aligned silicide (salicide). In the P-type substrate 710, after being placed deep into the N-type well 720, a high impedance can be formed between the P-type substrate 710 and the P-type well 740. It also increases the insulation and impedance between the MOSFETs M70 and M71. The insulation can be as high as 45dB or even higher than 45dB, so it can improve the power mastering ability and reduce the insertion loss. In addition, the process structure of the RF switching switch In 700, the distance between MOSFETs M70 and M71 is moderately increased by a distance D, which can increase the impedance between MOSFETs M70 and M71 to improve the insulation between MOSFETs M70 and M71 to reduce insertion loss and increase work. In contrast, the N-type MOSFET in the process structure 700 of the RF switch can also be replaced by a P-type MOSFET. To further illustrate the contents of the present invention, the present invention is directed to a process structure 700 for a switch. For the seventh embodiment, please refer to FIG. 7B. In this embodiment, the process structure 700 of the switch further includes a trench 790. The trench 790 is disposed in the process of the RF switch. In the P-type substrate 710 between the MOSFETs M70 and M71 in the structure 700, under the increased spacing D between the reduced MOSFETs M70 and M71, the high insulation of the process structure 700 of the RF switching switch can still be maintained. The trench 790 can be a shallow trench or a deep trench. Thus, the density of the MOSFET on the P-type substrate 710 can be increased, and the area of the RF switching switch can be reduced. 1313965 The present invention is further elaborated. In the content of the invention, an eighth embodiment is provided. Please refer to FIG. 8A, which is a schematic diagram of a process structure of the switch of the present invention. The process structure 800 of the switch is The substrate includes a plurality of MOSFETs and a high impedance Z connected to the end of the substrate. The MOSFETs are exemplified by N-type MOSFETs, MOSFETs M80 and M81, respectively, and are designed in a BiCMOS process on the same p-type substrate 810. Included: N-type buried layer 820, N-type well 830, P-type well 840, gate 850, source/drain 860, P-type heavily doped 870, deep trench DT, and between MOSFETs M80 and M8 1 A distance D is separated. In the P-type substrate 810, after the N-type buried layer 820 is placed, the deep trenches DT are symmetrically added on both sides of the N-type buried layer 820, so that a high impedance can be formed between the MOSFETs M80 and M81. The insulation between the MOSFETs M80 and M81 is increased to achieve the purpose of improving the power mastering capability and reducing the insertion loss. To further illustrate the contents of the present invention, the present invention is directed to a process structure 800 for a switch, and a ninth implementation is proposed. For example, please refer to FIG. 8B. In this embodiment, the process structure 800 of the switch is further included with a trench 880. The trench 880 is placed in the P-type substrate 810 between the MOSFETs M80 and M81 in the process structure 800 of the switch, and the switching switch can be maintained while reducing the spacing D between the MOSFETs M80 and M81. The high structural insulation of the process structure 800, and the trench 880, can be a shallow trench or a deep trench. As a result, the dense 1313965 set of the MOSFET on the P-type substrate 810 can be increased, and the area of the switch can be reduced. In addition, the content of the present invention is the insertion rate of the switch of the loss of the f-grip and the linearity of the lower device. Sheep amplification ^ to enhance the power amplification structure: I · The present invention is a circuit structure of a radio frequency switch and its structure; % structure, using ^ cup work 浐 0 with CM 〇 S or MCMOS process and substrate life and RF Adding an ancient resistance f-slot to the switch can increase the impedance of the end point of the CMOS substrate, the resistance of the groove γ, the impedance of the earth 鳊 point, and the impedance between the elements, so as to reduce the insulation degree of the south. Insert damage and improve power mastery. And drop: two cost integration. J 〃 The existing RF chip carries the advantages provided by the inner valley of the present invention. The BiCMOS cost 鼗 4 π 4 t does not use the LMUb and the cost of the ten-frequency RF switch, which greatly reduces the switching capacity: providing another The advantage is that 'the RF cut and the cover work 聿 ^ ^ into a good impedance, in order to reduce the insertion loss and change the power mastery. The advantage provided by the redemption content is that the RF-cutting soap has a series of multiple ΕΤ structures, which greatly suffices the power mastery. Replacing 2:: Port! = The advantage is that the RF is grounded. The advantage of using the structure of the knife & the signal can be shunted to the content provided by the present content is that the advantage of using the resonance 1313965 feature to achieve low insertion loss and high power control content is that The cross-signal end, the first signal end and the second signal end not only reduce the return loss of the RF switch, but also increase the range of the linear phase to achieve the capability and the capability of wide-band and multi-frequency switching. Another advantage provided by the content is that in the RF switching structure, the impedance between the components is pulled apart between each MOSFET to achieve high insulation. The ability of the circuit unit. The invention and the line serve as a common connecting medium and lifting insulation, high power mastering of the switch
本發明 換開關之製 距，以提高 本發明内容所提供之再一優點在於，於射頻 換開關之製程結構中，每個M〇SFET間所拉開一間 :，並置入溝槽，以確保高度絕緣度、減少所二 的間距、增加電路的集積度。 本發明内容所提供之又一優點在於，於射頻切 換開關之製程結構中，每個M〇SFET中皆加入掩埋 及深溝槽，以改善絕緣度。 ^ 本發明内容所提供之再一優點在於，適用於所 有訊號切換開關’也適用於所有切換開關的結構。 所附圖式僅提供參考與說明用，並非用來 發明加以限制者。惟以上所述僅為本發明之較佳可 打實施例，非因此即拘限本發明之專利範圍，故兴 凡運用本發明說明書及圖示内容所為之等效結構‘ 化，均同理包含於本發明之範圍内，合予陳明。 22 1313965 【圖式簡單說明】 第一圖係為利用理想零件來模擬金氧半場效電 晶體之電路核型不意圖， 第二圖係為本發明内容之第一實施例之切換開 關之電路結構不意圖， 第三圖係為本發明内容之第二實施例之切換開 關之電路結構不意圖； 第四圖係為本發明内容之第三實施例之切換開 關之電路結構不意圖， 第四A〜D圖係為本發明内容之共振電路單元之 電路示意圖； 第五圖係為本發明内容之第四實施例之切換開 關之電路結構不意圖； 第六圖係為本發明内容之第五實施例之切換開 關之電路結構不意圖， 第七A圖係為本發明内容之第六實施例之切換 開關之製程結構示意圖； 第七B圖係為本發明内容之第七實施例之切換 開關之製程結構示意圖； 第八A圖係為本發明内容之第八實施例之切換 開關之製程結構示意圖；及 第八B圖係為本發明内容之第九實施例之切換 開關之製程結構示意圖。 1313965 【主要元件符號說明】 場效電晶體模型 10 切換開關之電路結構200, 300, 400, 500, 600 訊號共用端 210, 310, 410, 510, 610 第一訊號端 220, 320, 420, 520, 620 第二訊號端 230, 330, 430, 530, 630 第一訊號串聯電晶體單元 240, 340, 540Another advantage of the present invention is that in the process structure of the radio frequency change switch, each M〇SFET is pulled apart: and placed in the trench to Ensure high insulation, reduce the spacing of the two, increase the degree of circuit accumulation. Another advantage provided by the present invention is that in the process structure of the RF switching switch, buried and deep trenches are added to each M〇SFET to improve the insulation. A further advantage provided by the present invention is that the application of all signal switching switches 'is also applicable to the construction of all switching switches. The drawings are provided for reference and description only and are not intended to be limiting. However, the above description is only a preferred embodiment of the present invention, and thus the scope of the present invention is not limited thereto, so the equivalent structure of the present specification and the illustrated contents is used in the same manner. Within the scope of the present invention, it is combined with Chen Ming. 22 1313965 [Simple description of the drawing] The first figure is a schematic diagram of the circuit nucleus of the MOS field half-effect transistor using the ideal part, and the second figure is the circuit structure of the switch of the first embodiment of the present invention. The third diagram is not intended to be a circuit configuration of the switch of the second embodiment of the present invention; the fourth diagram is not intended to be a circuit configuration of the switch of the third embodiment of the present invention, and the fourth A 〜D图 is a circuit diagram of a resonant circuit unit of the present invention; the fifth figure is a circuit configuration of the switch of the fourth embodiment of the present invention; the sixth figure is the fifth embodiment of the present invention The circuit structure of the switch is not intended to be a schematic diagram of the process of the switch of the sixth embodiment of the present invention; the seventh block B is the switch of the seventh embodiment of the present invention. FIG. 8 is a schematic diagram of a process structure of a switch according to an eighth embodiment of the present invention; and FIG. 8B is a ninth embodiment of the present invention. The switching of the schematic structure of the switch process. 1313965 [Description of main component symbols] Field effect transistor model 10 Switching circuit structure 200, 300, 400, 500, 600 Signal sharing terminal 210, 310, 410, 510, 610 First signal terminal 220, 320, 420, 520 , 620 second signal terminal 230, 330, 430, 530, 630 first signal series transistor unit 240, 340, 540
第二訊號串聯電晶體單元 250, 350, 450, 550 第一訊號分流電晶體單元 370, 470, 570, 670 第二訊號分流電晶體單元 380, 580, 680 控制訊號 SW 反向控制訊號 SW_Second signal series transistor unit 250, 350, 450, 550 First signal splitting transistor unit 370, 470, 570, 670 Second signal splitting transistor unit 380, 580, 680 Control signal SW Reverse control signal SW_
阻抗 Z 第一共振電路單元 461 第二共振電路單元 462Impedance Z first resonant circuit unit 461 second resonant circuit unit 462
傳輸線 TL 切換開關之製程結構 700 P型基板 710 深入N型井 720 N型井 730 P型井 740 N型重摻雜 750 P型重摻雜 760 24 1313965Transmission line TL switch process structure 700 P-type substrate 710 deep N-well 720 N-type well 730 P-type well 740 N-type heavily doped 750 P-type heavily doped 760 24 1313965
源極/汲極 770 閘極 780 溝槽 790 金氧半場效電 晶體 M70,M71 阻抗 Z 切換開丨 關之製: 程結構 800 掩埋層 820 N型井 830 P型井 840 閘極 850 源極/汲極 860 P型重摻雜 870 溝槽 880 深溝槽 DT 金氧半場效電I 晶體 M80,M81 阻抗 ZSource / drain 770 gate 780 trench 790 gold oxygen half field effect transistor M70, M71 impedance Z switch open system: process structure 800 buried layer 820 N type well 830 P type well 840 gate 850 source / Bungee 860 P type heavily doped 870 trench 880 deep trench DT gold oxygen half field effect I crystal M80, M81 impedance Z