TWI311685B - Photomask, method of manufacturing the same and blank mask used in the method - Google Patents

Description

1311685 21976pif IX. Description of the invention: • Technical field to which the invention pertains. The present invention relates to a mask for manufacturing a flat panel (disPla > 0 and a method of manufacturing the same), and more particularly to a mask, • The method of manufacturing the mask and the blank mask used in this method. [Prior Art] A gray tone mask or a slit mask is used in the process of making a flat panel display, for example, in manufacturing. In the process of liquid crystal display (liqUid crystal display LCD), the number of masks is reduced. The gray scale mask includes a transmittance adjusting portion, and a fine pattern which is less than the power resolution limit of the exposure device for manufacturing the LCD is formed. In the transmittance adjusting portion, the gray scale mask adjusts the amount of light passing through the transmittance adjusting portion. The gray scale mask is a mask for selectively leaving a photoresist layer on the substrate corresponding to the entire region of the transmittance. ° ° Generally, the power resolution limit for the exposure apparatus used to manufacture large-size LCDs is about 2.5 to 4.0 μm. In the gray-scale mask shown in Figure ία, the transmission rate adjustment unit A2 is fine. The interval width 12 between the line width w of the fine pattern 1 与 and the fine pattern 1 小于 is less than 2.5 μm. Fig. 1B shows the distribution of light intensity by the gray scale mask. The fine pattern 1 formed in the transmittance adjusting portion A2 The power resolution limit of 〇 is lower than the power resolution limit of the exposure device. Referring to FIGS. 1A and 1B, the light intensity of the transmittance adjusting portion VIII through the gray scale mask is smaller than the penetration portion A1 through the gray scale mask. Therefore, in the photoresist layer coated on the LCD substrate, the amount of light penetrating the portion corresponding to the gradation adjusting portion A2 of the gray-scale mask is smaller than the penetration corresponding to the gray-scale mask 6 1311685 21976 pif The amount of light that penetrates part of the portion A1. Therefore, when the photoresist layer is applied to the photoresist layer, the gray-scale mask is used, and the exposed material is left by the layer of the J-plate to the transmittance corresponding to the gray-scale mask. Photoresist 2 = The photoresist layer applied on the LCD substrate is subjected to a Z 4 = (ashing) process to remove the remaining photoresist V. After that, the remaining photoresist layer can be removed. In this way, when the conventional grayscale mask is used, the number of masks required by the person = can be reduced from two to - ^^Substrateΐ, 1〇=: The second error should be less than ±1 μm, and the line width error (ie, the line width range (see the maximum line width)) should be less than ±0.1 μm. This condition is a strict condition for the use of the mask size and uniformity (line width range) of the large size of the current flat panel. In addition, the ruler for viewing the LCD has been increased to more than 1 A ruler. For the reticle having the above-mentioned large size, it is difficult to satisfy the above conditions of accuracy and uniformity. Therefore, when using a conventional gray scale mask, each pass of the exposure process is passed. The light transmittance of the transmittance adjusting portion A2 may be different. Therefore, the thickness of the photoresist layer remaining on the LCD substrate may be different each time the exposure process is performed. SUMMARY OF THE INVENTION The present invention provides a photomask that does not need to form a fine pattern that is less than the power resolution limit of an exposure device to adjust transmittance, even if the amount of light passing through the transmittance adjusting portion of the large mask is made uniform. And the uniformity of the thickness of the implant layer remaining on the 1311685 21976 pif LCD substrate can be obtained. The f invention also provides a method of manufacturing the county cover. The invention also provides a blank military Qin 0 used in the manufacturing method of the reticle. According to the invention, a reticle is provided, comprising: a transparent base 'radiation rate', which is formed on a transparent substrate; a light blocking layer formed on the light transmissive adjustment layer, wherein the exposed transparent substrate (four) first hole is formed on the laminate including the photo-adjusting layer and the light blocking layer, and the second hole exposing the transmittance adjusting layer is formed in the light blocking layer The transmittance adjusting layer may be a material layer having a thickness of 10 to 70% when the wavelength of the human light is 300-500 nm. Further, the transmittance adjusting layer may have the largest phase with incident light. The thickness of the material layer is changed. The transmittance adjusting layer and the light blocking layer may be the same material layer. According to another aspect of the present invention, there is provided a photomask comprising: a transparent substrate; the light blocking layer is formed in the transparent (four) And a transmittance adjusting layer formed on the transparent substrate and the light blocking layer, wherein the plurality of first holes exposing the transparent substrate are in the light blocking layer and the transmittance adjusting layer is filled only in the first portion of the portion. Wavelength The transmittance adjusting layer may have a thickness of from 10 to 70% at 300 to 500 nm. Further, the transmittance adjusting layer may have a thickness at which the phase of the incident light is most changed by 60. According to the present invention = one more In one aspect, a method of manufacturing a photomask is provided, the method comprising: forming a laminate comprising a transmittance adjusting layer and a light blocking layer, wherein the I3116l is successively stacked on the transparent substrate; and the first hole in the light comprises: covering the photoresist layer The laminate is selectively exposed to the area of the first hole; a portion of the laminate is exposed by removing the photoresist layer and exposing the field; · ΛΑ #excluding the photoresist layer of the exposed area as a Ζ etched part of the laminate; and removing the photoresist layer. A $ V, brother-hole may include a photoresist layer to fill the stack The first light-blocking resist layer corresponds to the area of the second hole'· is exposed by the exposed area--partial light-blocking layer; the use of removing the sound-insulating layer is used as a rice mask The exposed part of the photoresist (10)' and the photoresist layer that has been removed by removing the exposed portion. The f-knife is particularly effective == can be formed as When the wavelength of the incident light is qingnai, the transmittance is the thickness of the purchased %. Further, the transparent phase is formed such that the phase of the incident light is changed by a maximum of 60. The thickness is proportional to the stacking of the first hole. The gold barrier layer formed by the alignment mark together with the hole can be formed of a material layer containing a metal having a different selectivity. The method of the present invention is to provide a method for manufacturing a mask. Forming a light blocking layer on the transparent substrate; forming at least two holes of the substrate in the light blocking layer; and filling the transmittance adjusting layer to the method, in forming at least two holes, the alignment mark may be associated with the 1311685 2l976pif Forming the holes together. Forming the at least two holes may include: covering the photoresist layer to selectively expose the region of the photoresist layer corresponding to the hole in the photo-blocking layer; and exposing the region to a portion of the photo-blocking layer; Show "nine barrier layers; and remove the photoresist layer. Separating the apertures can include: forming the holes and covering the photoresist; selectively exposing the holes to be selected and filled with transmission: =. a photoresist layer around the hole of the positive a; removing the exposed portion by removing the exposure layer of the photoresist layer; removing the exposed portion; and removing the exposed portion of the exposed light Resistance layer. The radiation rate adjusting layer may be formed to have a thickness at which the wavelength of the human light is 3GL500 and the transmittance is %. Further, the transmittance adjusting layer v can become the phase of the incident light to be most changed by 00. The thickness. The J-radiation adjustment layer and the photo-barrier layer may be formed of a material layer containing a metal having a non-etching selectivity. According to another aspect of the present invention, there is provided a method of manufacturing a photomask comprising: forming a photoresist on a transparent substrate; forming a first hole exposing the permeation plate in the photo-blocking layer; and filling the transmittance adjusting layer a first aperture, and a first 孑L exposing the transparent substrate at the exit of the first aperture at the photointerference layer. In this method, the alignment mark can be formed with the first hole when the first hole is formed. Forming the first hole may include: covering the photoresist layer on the light blocking layer; selectively exposing the photoresist layer to expose a portion of the photoresist corresponding to the exposed region of the first hole = by removing the photoresist layer Layer; and return to the photoresist layer. "θ ' _ exposed part of the photoresist fills the first hole and forms a second hole to adjust the layer on the photoresist layer; covers the photoresist; selectively exposes the photoresist layer to the first, transmission sheep The exposed part of the wide 2 resistive layer is revealed: the part of the material is shot: the part of the exposed part and the exposed part of the lower part of the light block are formed by the entire layer to be formed when the wavelength of the incident light is 3〇〇_500. The thickness. In addition, the transmittance adjustment layer; / becomes the phase of the incident light is changed by a maximum of 6 〇. The thickness. The entire layer and the light blocking layer may be formed of a material layer containing a metal having different side selectivity. According to still another aspect of the present invention, a blank mask is provided, comprising: a moon-permeable substrate, a transmittance adjusting layer, a light-blocking layer formed on the transparent substrate, formed on the transmittance adjusting layer; and a photoresist layer, Formed on the light barrier layer. The light blocking layer may include an anti-reflection film. The transmittance adjusting layer may have a thickness of 10 to 70% when the wavelength of the incident light is 300 to 500 nm. The transmittance adjustment layer may have a phase in which the incident light is most changed 60. The thickness. The transmittance adjusting layer and the light blocking layer may be formed of a material layer containing a metal having different etching selectivity. 11 1311685 21976pif According to the present invention, the uniform light transmittance of the transmittance adjusting portion of the photomask can be obtained. Therefore, the uniformity of the thickness of the photoresist layer remaining on the substrate can be obtained in the process of manufacturing the LCD. Therefore, the conventional problems caused by the unevenness of the thickness of the remaining photoresist layer can be solved. Thus, the reliability of the process for manufacturing an LCD can be improved. Furthermore, since the reticle according to the present invention does not include a finer than the power resolution limit of the exposure device in the transmittance adjusting portion

The pattern, the reticle can also be easily applied to a process for manufacturing an LCD that requires a large reticle having a size larger than a metric meter. The above and other objects, features and advantages of the present invention will become more <RTIgt; In the drawings, the thickness and area of the layer are enlarged for clear display. [Embodiment] First, a blank mask according to an embodiment of the present invention will be described. Referring to FIG. 2, the blank mask includes a transparent substrate 20, and further includes a transmittance adjusting layer 22, a light blocking layer % having an anti-reflection film, and a photoresist layer PR"' successively stacked on the through plate 2 ()on. The transparent substrate 20 may be a quartz substrate. The transmittance adjusting layer 22 is compatible with the main component of the light blocking layer μ. The transmittance adjusting layer 22 may have excellent adhesion to the light barrier layer %, and may be an excellent shoe material: layer having a % compared to the silk spacer layer. For example, the transmittance adjusting layer 22 may be an aluminum (10) layer or an aluminum t Ϊ '. The light blocking layer 24 may be a network (9) layer or a complex compound = iL 4 may be formed of a material constituting the transmittance adjusting layer 22 or may be, for example, itb. Transmittance. The thickness of the positive layer 22 may vary depending on the wavelength, phase, or 12 I3H685pif transmittance of the incident light. For example, when the wavelength of light incident on the transmittance adjusting layer 22 is 300 to 500 nm, the transmittance adjusting layer 22 may have a thickness in which the transmittance of incident light becomes 10-70%. Further, the transmittance adjusting layer 22 may have a phase in which the light penetrating the transmittance adjusting layer 22 is most changed 60. The thickness. The phase of the incident light is greater than 6 当 when passing through the transmittance adjusting layer 22. The light intensity may be distorted due to phase conflict. Considering this factor, the transmittance adjustment layer 22

The thickness can be 400 A or less. The thickness of the light blocking layer 24 can be as close as 6 至 to 1200 Å. A method of manufacturing a reticle according to an embodiment of the present invention will be described with reference to Figs. The blank mask of Fig. 2 is used for the light manufacturing method shown in Figs. Specifically, the reference, -/圃j, main exposure (L1) is performed on the blank layer PR1 of the blank mask using the laser exposure apparatus. The main exposure (L1) is performed in a predetermined region of the photoresist, PR1, for example, only in the region corresponding to the penetration portion of the transparent substrate 2A. After the main exposure (1^), a main development process is performed. When the photoresist layer PR1 is removed in the main exposure process in the region where the main exposure (L1) is exposed, the photoresist layer pattern PR1A of the - - region of the threat exposure wire spacer 24 is formed on the light barrier layer 24. , as shown in Figure 4. The exposed portion of the photo-intercept layer 曰μ is patterned using the photoresist layer pattern PR1A, and then formed under the exposed portion of the photo-barrier layer 24, 22 is also. At this time, the process can be wet-wet dry-type engraving = when the mastering process of the porous layer 22 and the spacer layer 24 can be simultaneously performed. However, when the main transmittance is fine, 13 1311685 pif is performed by main etching and is performed after setting the condition of the (four) condition of the silk spacer 24. After the etching process is performed, the photoresist layer pattern PR1A is removed. In this manner, as shown in Fig. 5, the third hole 暴露 hole exposing the penetration portion Au of the transparent substrate 2 is formed to include the transmittance adjustment layer 22 and the light barrier layer to the Ni layer S1. The alignment mark can be formed on the transparent substrate 20 or the transmittance adjusting layer 22 when the first hole hi is formed and the transparent portion 2' defines the penetrating portion All' for the subsequent exposure. Next, referring to FIG. 6, a photoresist layer pR2 filling the first holes hl is disposed on the light blocking layer 24. Next, the sub-exposure (L2 is performed on the predetermined area of the photoresist layer PR2. The sub-exposure (L2) is performed only on the pupil and the layer PR2 corresponds to the transmissivity of the (4) substrate 2G. The predetermined area is thus removed. Only a predetermined area of the photoresist layer PR2 is removed in a developing process after the sub-exposure (L2). 7 is the result of the development process performed by the sub-exposure (L2). A photoresist layer pattern pR2A is formed on the second layer of the light barrier layer: and the layer pattern PR2A exposes a portion of the photoresist between the penetration portions A1, and then the photoresist layer pattern PR2A is used as an etching after the development process. The mask is exposed to the exposed area of the light blocking layer 24. The silver engraving process is performed to expose the transmittance adjusting layer 22. &gt;, 'Fig. 8, through a residual process, exposing a portion of the transmittance adjusting chip 22 The holes h2 (hereinafter referred to as second holes) are formed in the light blocking layer & the light incident on the second hole h2 is incident on the transparent substrate 2 through the transmittance adjusting layer 22. Therefore, the light is incident through the second hole h2. The light of the substrate 2 is less than the transmittance of the transparent substrate, and the transmittance of the substrate 20 is lower than that of the transmittance adjusting layer 22 The transmittance of the light incident on the first hole hi on the road. The transmittance of the light incident on the moon-transparent substrate 20 through the second hole h2 with respect to the transparent substrate 2〇 differs depending on the thickness of the transmittance adjustment layer 22 on the optical path. The transmittance of light of the transparent substrate corresponding to the predetermined area A22 of the first hole h2 is different from the transmittance of light incident on the transparent substrate 2 via the first hole hi. Therefore, corresponding to the second hole h2 of the moon-permeable substrate 20. The area A22 is referred to as a transmittance adjusting portion. Next, the photoresist layer pattern pR2A is removed after the second hole h2 is formed. As a result, the 兀1 is formed into a reticle as shown in Fig. 9. The reticle includes the penetrating portion All. The cover has a transmittance adjusting portion A22 whose top surface is covered by a transmittance adjusting layer 22 having a uniform thickness. Fig. 10 is a plan view of the reticle of Fig. 9. Figs. 3 to 9 are lines 3-3 of the reticle along the line of Fig. 10. A cross-sectional view of '. The area of the transmittance adjusting portion A22 is larger than the area of the penetrating portion An. A method of manufacturing a photomask according to other embodiments of the present invention is described below. The same components used in Figs. 3 to 9 are described. Symbols denote the same elements' and subsequent embodiments are also Referring to Fig. 11, a light blocking layer 24 is formed on a transparent substrate 2A. A photoresist layer PR1 is formed on the light blocking layer 24. The main exposure (ui) is selectively performed using a laser exposure apparatus. It is only performed in a predetermined region of the photoresist layer pRi. The portion of the photoresist layer PR1 that is selectively exposed to the main (L11) corresponds to the 15 I3116^pif domain, and the base 20 is used as the - penetration portion and the transmittance adjustment. After the execution of a portion of the resist layer ίΐι ί11), the development process is performed to remove the portion of the light: the light (L11). As a result of the development process, a photoresist layer pattern is formed on the photo-layer 24 as shown in a predetermined region of the barrier layer 24. The area exposed by the light_layer 24 is made of light and is masked by the _.峨Execute to remove the photoresist layer pattern 卩(10) after the side. Two U, as shown in FIG. 13, exposes a plurality of first holes _ft of the transparent substrate 2G to the fine spacers 24. The through-hole portion A11 of the transparent substrate 2 is exposed by a = white hole, and the first hole cell 1 of the transmittance adjusting portion of the transparent substrate 2 is exposed. The first hole hhl may also be formed on the transparent substrate 20 by the alignment mark of the original exposure. A transmittance adjusting layer 40 for filling the first hole hM with reference to Fig. 14' is formed on the light blocking layer 24. The transmittance adjusting layer 4'' may be the same as the transmittance adjusting layer 22 of Fig. 2. A photoresist layer pR2 is coated on the transmittance adjusting layer 40. Next, the sub-exposure (L22) is selectively performed using only one laser exposure apparatus and only in the "predetermined area" of the photoresist pR2. At this time, the secondary exposure (L22) is performed only on the penetration portion of the photoresist layer PR2 corresponding to the transparent substrate 2, Α1 = - predetermined 11 domains. The development process is performed after the secondary exposure (L22). In the developing process, the area of the sub-exposure (L22) is removed from the wire layer PR2. As a result, as shown in Fig. 15', the photoresist layer pattern pR2B is formed in the pre-turn region of the transmittance adjusting layer. The photoresist layer pattern pR2B can be formed to cover the transmittance adjusting portion A22 of the transparent substrate 20. 1311685 21976pif Next, the φ case PR2B is used as the part of the hood of the hood. The side process may be a wet or dry type of surnamed result as shown in Fig. 16, exposing the penetration portion A11 of the transparent substrate 2G. After the process, the photoresist layer pattern pR2B is removed. In this manner, a reticle in which the transmittance adjusting portion A22 is located between the penetrating portions ai and covered by the transmittance adjusting layer 4 is completed as shown in Fig. 17'. A method of manufacturing a photomask according to other embodiments of the present invention will now be described. In Fig. 18, a light blocking layer 24 is formed on a transparent substrate 2''. A photoresist layer PR1 is coated on the light blocking layer 24. The main exposure is selectively recorded in the Kawasaki pR = area using a laser exposure device. The selective main exposure (L31) can be performed after the -2 area exposure (L31) of the transmittance adjusting portion A22 of the light plate 2G. - The developing process is performed on the photoresist layer tearing. Figure 19 ’ A photoresist layer pattern PRic is formed on the light barrier layer = soil. The photoresist layer pattern me exposes the light blocking layer μ corresponding to a predetermined region of transmittance adjustment = 22. The photoresist layer pattern is used as an illuminating mask 2 to expose the exposed portion of the light blocking layer 24 until the transparent substrate 2 is exposed. The hole 11 of the transmittance adjusting portion A22 exposing the transparent substrate 2G is formed in the light layer 24 as shown in Fig. 20'. The process can be either wet or dry. After the first hole h11 is formed in the light blocking layer 24, the photoresist layer pattern pRlc is removed on the light blocking layer 24. Figure 21 shows the result of the removal of PR1C. When the first &quot;#24,田私4娣&quot; 丨弟孔孔hU is formed on the light barrier i 24, the alignment mark can also be formed on the light barrier 17 13 Π 685 if the red is shown in Figure 22 'filled first The transmittance adjusting layer 50 of the hole hU is formed on the light blocking layer 24. Transmittance 纟 纟 敕 射 转 转 转 H H H H H H 四 四 四 四 四 四 α α α 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光 光&quot; 'Layer % ° At this time' The portion of the transmittance adjusting layer 5G exposed corresponds to the penetration portion Ail of the transparent substrate 20.

Next, use the photoresist layer pattern fertilizer to make the mask (4) transparent. The exposed area of layer 50 is adjusted until the transparent substrate 2 is exposed. Since the process of the last name is successively (10) the process of the adjustment layer 5G and the photoresist layer % process can be a single- or multi-pass process, as shown in FIG. 3, the transmittance adjusting layer 5G and the light blocking layer 24 are formed end-to-end. Is the material the same? In addition, the residual process can be a wet or dry process. A second hole h22 exposing the penetration portion All of the transparent substrate 20 is formed on a stack S2 including the light blocking layer 24 and the transmittance adjusting layer 经由 via an etching process, as shown in FIG.曰

After the etching process, the photoresist layer pattern PR2C is removed, thereby completing a mask in which the transmissive portion A11 of the transparent substrate 20 is exposed and the transmittance adjusting portion A22 of the transparent substrate 2 is covered by the transmittance adjusting layer 5? , as shown in Figure 24. The present invention has been particularly shown and described with reference to the embodiments of the invention. For example, those skilled in the art can use a conventional exposure apparatus in a semiconductor process and a 'mask' to define a predetermined area of a photoresist layer instead of using a laser exposure apparatus. Further, the material which is not mentioned in the above description can be applied to the light-shielding layer or a transmittance adjusting layer to carry out the above embodiment. 18 1311685 2l976pif The material is provided by the rfr barrier and the transmissivity adjustment layer to provide additional clarity and scope. When it can be used as "= and: the one is i. The scope of protection of the invention is attached to the patent application scope. As described above, the photomask according to the present invention includes a non-fine pattern, a rate; a whole resolution limit is sensible, and the entire transmission 2 is covered by a transmittance adjustment layer having a uniform thickness == the present invention The mask can maintain the transmittance adjustment portion of the mask; the sentence is firstly permeable. Therefore, the manufacturing of the LCD can maintain the uniformity of the thickness of the photoresist layer remaining in the base layer. Therefore, the conventional factor can be solved. Leaving the problem caused by the uneven thickness of the photoresist layer. As a result, the reliability of manufacturing the LCf or the electropolymerized display panel (plasma) can be improved. Further, since the photomask according to the present invention is The transmittance adjustment section does not include a fine pattern having a power resolution limit less than the power resolution limit of the exposure apparatus, such as a conventional gray scale mask, which can be easily applied to the manufacture of a large mask requiring a size larger than 1 meter. In the process of LCD. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1A is a plan view of a conventional gray scale mask. Fig. 1B shows a distribution of light intensity by a conventional gray scale mask. Fig. 2 is a cross section of a blank mask according to an embodiment of the present invention. 3 to 9 are cross-sectional views showing a method of manufacturing a mask of a blank mask according to an embodiment of the present invention, which is a plan view of a mask of a mask formed by a method of manufacturing a mask shown in FIG. Figures 11 to 17 are cross-sectional views showing other methods according to the present invention. The ZT of the method is a manufacturing method of the original (the main component symbol description).

10 : Fine pattern 12 . Space width W: Line width Α 1 : Penetration portion Α 2 : Transmittance adjusting portion PR1 , PR2 : Photoresist layer 2 〇: Transparent substrate 22 ' 40, 50 : Transmittance adjusting layer 24 : Photo barrier layer U, Ln, L31: main exposure L2, L22, L32: secondary exposure PR1A, PR2A, PR1B, PR2B, PR1C, PR2C: photoresist layer pattern Sb S2: lamination All: penetration portion hi, hhl: first hole H2, h22: second hole 1311685 21976pif A22 : predetermined area

Claims (1)

1311685 21976pif X. Patent application scope: l A photomask comprising: a transparent substrate; a transmittance adjusting layer formed on the transparent substrate; and a light blocking layer formed on the transmittance adjusting layer, wherein the roadway is A first hole of the transparent substrate is formed on a laminate including the transmittance adjusting layer and the light blocking layer, and a second hole exposing the transmittance adjusting layer is formed on the light blocking layer. 2. The reticle of claim 2, wherein the transmittance adjusting layer has a transmittance of 10-70% when the wavelength of the incident light is 3 〇〇 5 〇〇 nanometer. A layer of material of thickness. The reticle of claim 1, wherein the transmittance layer is changed by a maximum of 6 具有 with a phase of incident light. The thickness of the material layer. 4. The reticle of claim 1, wherein the transmittance adjusting layer and the light blocking layer are the same material layer. 5. A reticle comprising: a transparent substrate; a light blocking layer formed on the transparent substrate; and a transmittance adjusting layer 'on being formed on the transparent substrate and the light blocking layer, wherein the transparent substrate is exposed A plurality of first holes are in the light blocking layer, and 22 the transmittance adjusting layer is filled only in a portion of the first holes. 6. The reticle of claim 5, wherein the transmittance adjusting layer has a thickness of from 0 0 to 70% when the incident light has a wavelength of 300 to 500 nm. 7. The reticle of claim 5, wherein the transmittance adjusting layer has a phase of incident light that is maximally changed by 6 。. The thickness. 8. A method of fabricating a reticle, comprising: forming a laminate, comprising a transmittance adjusting layer and a light blocking layer, which are successively stacked on a transparent substrate; forming a first hole exposing the transparent substrate a laminate; and forming a second hole exposing the transmittance adjustment layer away from the first aperture at the light blocking layer. 9. The method of fabricating a reticle of claim 8, wherein the forming the first hole comprises: covering a photoresist layer on the laminate; selectively exposing the photoresist layer to correspond to a region of the first hole; exposing a portion of the stack by removing the exposed region of the photoresist layer; using the photoresist layer to remove the exposed region as an etch mask And I insect the exposed portion of the laminate; and remove the photoresist layer. The method of manufacturing the reticle of claim 8, wherein the forming the second hole comprises: covering the photoresist layer to fill the first hole on the laminate; 1311685 21976pif selectively exposing the photoresist layer to a region corresponding to the second hole; • revealing a portion of the photo-barrier layer by removing the exposed region of the photoresist layer; Removing the photoresist layer of the exposed region as an etch mask. etching the exposed portion of the light blocking layer; and removing the exposed portion of the exposed photoresist layer. 11. The method of manufacturing a reticle according to claim 8, wherein the transmittance adjusting layer is formed to have a transmittance of 10 to 70% when the wavelength of the incident light is 3 〇〇 5 〇〇 ' metre. The thickness. 12. The method of manufacturing a reticle according to claim 8, wherein the transmittance adjusting layer is formed to have a thickness at which the phase of the incident light is changed by a maximum of 60°. 13. The method of manufacturing a reticle according to claim 9, wherein the alignment mark is formed on the laminate together with the first hole when the first hole is formed. The method of manufacturing a reticle according to claim 8, wherein the transmittance adjusting layer and the light blocking layer are formed of a material layer containing a metal having different etching selectivity. 15. A method of fabricating a reticle, comprising: forming a light blocking layer on a transparent substrate; forming, in the light blocking layer, two holes that expose the transparent substrate; and filling a transmittance adjusting layer in at least one of Said hole. The method of manufacturing a reticle according to claim 15, wherein the 24 21976 pif alignment mark is formed together with the hole 1311685 wherein the formation is at least two holes. Wherein the method of manufacturing the reticle of the invention includes covering the photoresist layer on the photo-barrier layer; exposing the region of the photoresist layer corresponding to the hole; the i-blocking ΓΓ4 photoresist layer The portion of the material is exposed to reveal a portion of the exposed portion of the silk spacer; and the photoresist layer is removed. The manufacturing method of the group according to Item 15, wherein the filling at least one of the holes comprises: forming a transmittance adjusting layer covering the hole and covering the light blocking layer On the transparent substrate; covering the photoresist layer on the transmittance adjusting layer; selectively exposing the photoresist layer around the hole selected and filled with the transmittance adjusting layer in the hole; Removing the exposed portion of the photoresist layer to expose the transmittance adjustment layer around the selected hole; removing the exposed portion of the transmittance adjustment layer; and removing the exposed The photoresist layer that has been partially removed. 19. The method of manufacturing a reticle according to claim 15, wherein the transmittance adjusting layer is formed to have a transmittance of 1 〇 7 7 % when the wavelength of the incident light is 300 to 500 nm. thickness. The method of manufacturing a reticle according to claim 15, wherein the transmittance adjusting layer is formed such that a phase of the incident light is most changed by 6 。. The thickness. The method of manufacturing a reticle according to claim 15, wherein the transmittance adjusting layer and the light blocking layer are formed of a material layer containing a metal having different etching selectivity . 22. A method of fabricating a reticle, comprising: - forming a light blocking layer on a transparent substrate; forming a first hole exposing the transparent substrate in the light blocking layer; filling a transmittance adjusting layer on the first a hole; and forming a second hole exposing the transparent substrate at the first aperture in the light blocking layer. 23. The method of manufacturing a reticle according to claim 22, wherein an alignment mark is formed together with the first hole when the first hole is formed. 24. The method of fabricating a reticle according to claim 22, wherein the forming the first hole comprises: covering a photoresist layer on the light blocking layer; f selectively exposing the light The resist layer corresponds to the region of the first hole; and t: the spear is exposed except for the exposed area of the photoresist layer, and the portion is exposed without a barrier layer; a portion of the light blocking layer; and removing the photoresist layer. 25. The method of manufacturing a reticle according to claim 22, wherein the method of filling the first hole and the forming the first hole; forming a transmittance of filling the first hole is The entire layer of the barrier layer covers the photoresist layer on the transmittance adjusting layer; the photoresist layer corresponds to the region of the second hole; the exposure is removed by the photoresist layer Transmissivity adjustment layer; | knife-to-path phase damage phase, removing the transmittance to adjust the light-blocking layer under the exposed portion; 2-way and removing the photoresist layer . 26. For example, the whole layer is formed when the wavelength of incident light is 3〇〇_50. In the case of Naiwei, it has a high yield of 1Q_7G%. In the manufacturing method of the reticle of the 22nd item, the thickness layer of t is formed such that the reduction of the human light is maximally changed to the metal of the selective layer. The layer is composed of different touches. 29. A blank mask, The method includes: a transparent substrate; a surface formed on the transparent substrate; a photoresist: a shape j on the transmittance adjusting layer; and a photoresist layer formed on the light blocking layer. 27 I311685if 30. The blank mask of claim 22, wherein the light blocking layer comprises an anti-reflection film. The blank mask of claim 22, wherein the transmittance adjusting layer has an incident light. The present invention has a thickness of from 10 to 70% at a wavelength of from 300 to 500 nm. 32. The blank mask of claim 22, wherein the transmittance adjustment layer has a phase of incident light that is maximally Change 6〇. degree. The blank mask described in the section, wherein the layer is formed of a material layer having a different economical selection 33. The transmittance adjusting layer of the 22nd patent application and the metal of the photoresist. 28