KR100635462B1 - Photo-mask, method of manufacturing the same and blank mask used to the same method - Google Patents

Abstract

A photomask, a manufacturing method thereof, and a blank mask used therefor are provided to improve uniformity of thickness of a remaining photoresist layer by using a light transmissivity controlling region instead of a fine pattern. A photomask includes a transparent substrate(20), a light transmissivity controlling layer(22) on the transparent substrate, and a light shielding layer(24) on the light transmissivity controlling layer. A first hole(h1) for exposing partially the transparent substrate to the outside is formed through the stacked structure of the light transmissivity controlling layer and the light shielding layer. A second hole(h2) for exposing partially the light transmissivity controlling layer to the outside is formed through the light shielding layer.

Description

Photo-mask, manufacturing method thereof and blank mask used in this manufacturing method {Photo-mask, method of manufacturing the same and blank mask used to the same method}

1 is a graph showing a plan view of a gray tone mask according to the prior art and light intensity distribution after passing through a gray tone mask.

2 is a cross-sectional view of a blank mask according to an embodiment of the present invention.

3 to 9 are cross-sectional views illustrating a method of manufacturing a photomask using the blank mask of FIG. 2.

10 is a plan view of a photomask formed by the photomask manufacturing method according to the embodiment of the present invention.

11 to 17 are cross-sectional views showing step by step a method of manufacturing a photo mask according to a second embodiment of the present invention.

18 to 24 are cross-sectional views showing step by step a method of manufacturing a photo mask according to a third embodiment of the present invention.

* Explanation of symbols for main parts of drawings *

20: transparent substrate 22, 40, 50: transmittance control film

24: Light shielding film A11: Light transmitting part

A22: transmittance adjusting unit h1, h11: first hole

h2, h22: 2nd hole L1, L11, L31: 1st exposure

L2, L22: Secondary exposure PR1, PR2: Photoresist film

PR1A, PR1B, PR1C, PR2A, PR2B, PR2C: photoresist film pattern

S1, S2: Laminate

1. Field of Invention

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a mask used in the manufacture of a flat panel display and a manufacturing method thereof, and more particularly, to a photomask, a manufacturing method thereof, and a blank mask used in the manufacturing method.

2. Description of related technology

In a recent flat panel display manufacturing process, such as a liquid crystal display (LCD) manufacturing process, it is common to use a gray tone mask (or slit mask) to reduce the number of use of the photo mask.

The gray tone mask includes a transmittance adjusting unit having a fine pattern below a resolution limit of an exposure apparatus for manufacturing an LCD, and controls the amount of light passing through the transmittance adjusting unit to selectively leave a photoresist film on an area corresponding to the transmittance adjusting unit of a substrate. It is a photo mask made for the purpose.

In general, the resolution power limit of the exposure apparatus for manufacturing large LCDs is on the order of 2.5 μm to 4.0 μm. In the gray tone mask shown in FIG. 1A, the width of the space 12 between the line width W and the fine pattern 10 of the fine pattern 10 of the transmittance adjusting unit A2 is smaller than 2.5 μm. Figure 1 (b) shows the intensity distribution of the light passing through this gray tone mask.

Referring to FIGS. 1A and 1B, the light passing through the light transmitting portion A1 of the gray tone mask passes through the transmittance adjusting portion A2 in which the fine pattern 10 smaller than the resolution limit is formed. It can be seen that the intensity of a light is small. Therefore, the amount of light transmitted to the portion formed on the region corresponding to the transmittance adjusting portion A2 of the gray tone mask among the photoresist film applied on the LCD substrate is on the region corresponding to the light transmitting portion A1 of the gray tone mask. Less than the amount of light delivered to the formed portion. As a result, when the resultant is developed after exposing the photoresist film coated on the LCD substrate using the gray tone mask, the photoresist film remains on the substrate corresponding to the transmittance adjusting part A2 of the gray tone mask. do. Accordingly, after the primary etching is performed on the LCD substrate using the photoresist film applied on the LCD substrate, an ashing process is performed to remove the remaining photoresist film, and then the portion where the remaining photoresist film is removed is removed. Secondary etching can be done.

As described above, when the conventional gray tone mask is used, there is an advantage in that two photo masks required for etching the LCD substrate can be reduced to one photo mask.

However, in the case of the gray tone mask which is a conventional photo mask, when the line width of the fine pattern 10 constituting the transmittance adjusting unit A2 is, for example, 1 μm or less, the line width error of the fine pattern 10 is ± 0.1 μm. The line width error between the fine patterns 10, that is, the line width range (maximum line width-minimum line width) should also be 0.1 占 퐉 or less.

These conditions are very stringent in terms of precision and uniformity (linewidth range) of large photo masks applied to current flat panel displays.

Moreover, in recent years, the size of photo masks applied to LCD manufacturing has increased to 1 µm or more. It is very difficult for such a large size photo mask to meet the above precision and uniformity conditions.

In this case, the light transmittance passing through the transmittance adjusting unit A2 may be different each time the exposure is performed, and thus the thickness of the photoresist film remaining on the LCD substrate may be changed each time the exposure is performed.

The technical problem to be achieved by the present invention is to improve the above-described problems of the prior art, and it is not necessary to form a fine pattern below the limit resolution of the exposure apparatus for controlling the transmittance, and to pass through the transmittance adjusting part even for a large photo mask. The present invention provides a photo mask capable of securing a uniform thickness of a photoresist film remaining on an LCD substrate by keeping the amount of light constant.

Another technical problem to be achieved by the present invention is to provide a method of manufacturing the photomask.

Another object of the present invention is to provide a blank mask used in the method of manufacturing the photo mask.

In order to achieve the above technical problem, the present invention includes a transparent substrate, a transmittance control film formed on the transparent substrate and a light shielding film formed on the transmittance control film, the transparent substrate in a laminate consisting of the transmittance control film and the light shielding film The exposed first hole is formed, and the light shielding film is provided with a second hole in which the transmittance adjusting film is exposed.

Here, the transmittance adjusting film may have a thickness of 10% to 70% when the wavelength of incident light is 300nm to 500nm.

In addition, the transmittance adjusting film may have a thickness that changes the phase of incident light up to 60 °.

The transmittance adjusting film and the light blocking film may be the same material film.

The present invention also includes a transparent substrate, a light blocking film formed on the transparent substrate and a transmittance control film formed on the transparent substrate and the light shielding film, in order to achieve the technical problem, the first hole is exposed to the light shielding film Are formed, and the transmittance adjusting film provides only a part of the first holes.

Here, the characteristics of the transmittance control membrane may be as described above.

In order to achieve the above another technical problem, the present invention provides a first step of forming a laminate comprising a transmittance control film and a light shielding film sequentially stacked on a transparent substrate, the first hole to expose the transparent substrate to the laminate And a third step of forming a second hole in which the transmittance control film is exposed at a position spaced apart from the first hole of the light blocking film.

The second step may include applying a photoresist film on the stack, selectively exposing a region corresponding to the first hole of the photoresist film, removing the exposed area of the photoresist film, and The method may further include exposing a portion of the stack, etching the exposed portion of the stack using the photoresist film from which the exposed region is removed as an etching mask, and removing the photoresist film.

The third step may include applying a photoresist film filling the first hole on the stack, selectively exposing a region corresponding to the second hole of the photoresist film, the exposed portion of the photoresist film. Removing the exposed portions of the light-shielding layer by removing the exposed portions, removing the exposed portion of the light-shielding layer by using the photoresist layer from which the exposed portion is removed as an etching mask, and removing the photoresist layer. .

The transmittance control film can be formed to a thickness such that the transmittance is 10% to 70% when the wavelength of the incident light is 300nm to 500nm. In addition, the transmittance control film may be formed to a thickness that changes the phase of incident light up to 60 °.

In the second step, an alignment mark may be formed in the stack together with the first hole.

The transmittance control film and the light blocking film may be formed of a material film containing a metal having a different etching selectivity.

According to another aspect of the present invention, there is provided a light shielding film on a transparent substrate, a second step of forming at least two holes through which the transparent substrate is exposed, and at least one of the holes. It provides a photo mask manufacturing method comprising the step of filling the with a transmittance control film.

Here, in the second step, an alignment mark may be formed together with the holes.

The second step may further include applying a photoresist film on the light shielding film, selectively exposing a region corresponding to the holes of the photoresist film, and removing the exposed area of the photoresist film to partially remove the light shielding film. The method may further include exposing the light, etching the exposed portion of the light blocking film, and removing the photoresist film.

The third step may include forming a transmittance adjusting film filling the holes on the transparent substrate and covering the light blocking film, applying a photoresist film on the transmittance adjusting film, and selecting holes selected from the holes filled with the transmittance adjusting film. Selectively exposing the circumferential photoresist film, removing the exposed portion of the photoresist film to expose the transmittance control film around the selected hole, removing the exposed portion of the transmittance control film and the photo The method may further include removing the resist film.

Formation of the transmittance control film, the etching selectivity of the transmittance control film and the light shielding film may be as described above.

The present invention also provides a first step of forming a light shielding film on a transparent substrate, a second step of forming a first hole to expose the transparent substrate on the light shielding film, the transmittance of the first hole in order to achieve the above another technical problem And a fourth step of forming a second hole in which the transparent substrate is exposed at a position spaced apart from the first hole of the light blocking film.

In this manufacturing method, an alignment mark can be formed together with the first hole in the second step.

The second step may include applying a photoresist film on the light shielding film, selectively exposing a region corresponding to the first hole of the photoresist film, and removing the exposed area of the photoresist film to remove the light shielding film. The method may further include exposing a portion of the substrate, etching the exposed portion of the light blocking film, and removing the photoresist film.

The third and fourth steps may include forming a transmittance control film filling the first hole on the light blocking film, applying a photoresist film on the transmittance control film, and corresponding to the second hole of the photoresist. Selectively exposing a region to be exposed, removing the exposed portion of the photoresist film to expose a portion of the transmittance control film, and sequentially removing the exposed portion of the transmittance control film and the light blocking film below it And removing the photoresist film.

Formation of the transmittance control film, the etching selectivity of the transmittance control film and the light shielding film may be as described above.

In order to achieve the above another technical problem, the present invention comprises a transparent substrate, a transmittance control film formed on the transparent substrate, a light shielding film formed on the transmittance control film and a blank comprising a photoresist film formed on the light shielding film Provide a mask.

In the blank mask, the light blocking film may include an anti-reflection film. The transmittance adjusting film may have a thickness of 10% to 70% when the wavelength of incident light is 300 nm to 500 nm. In addition, the transmittance adjusting film may have a thickness that changes the phase of incident light up to 60 °. In addition, the transmittance controlling film and the light blocking film may be material films containing metals having different etching selectivity.

By using the present invention, the light transmittance of the transmittance adjusting portion of the photo mask can be kept constant at all times. Therefore, it is possible to ensure uniformity of the thickness of the photoresist film remaining on the substrate in the LCD manufacturing process, it is possible to greatly improve the conventional problem due to the thickness non-uniformity of the residual photoresist film. Accordingly, the reliability of the LCD manufacturing process may be increased. And since the photo mask of the present invention does not include a fine pattern below the limit resolution of the exposure apparatus like the conventional gray tone mask, it can be easily applied to an LCD manufacturing process requiring a large photo mask having a size of 1 μm or more. have.

Hereinafter, a photo mask according to an embodiment of the present invention, a manufacturing method thereof, and a blank mask used in the manufacturing method will be described in detail with reference to the accompanying drawings. In this process, the thicknesses of layers or regions illustrated in the drawings are exaggerated for clarity.

First, a blank mask according to an embodiment of the present invention will be described.

The blank mask according to the embodiment of the present invention includes a transparent substrate 20 as shown in FIG. 2, and a light shielding film including a transmittance adjusting film 22 and an antireflection film sequentially stacked on the transparent substrate 20. 24 and photoresist film PR1. Here, the transparent substrate 20 may be a quartz substrate. The main components of the transmittance adjusting film 22 and the light blocking film 24 may be the same. The transmittance adjusting film 22 may be a material film having excellent adhesion to the light blocking film 24 and excellent etching selectivity with respect to the light blocking film 24. For example, the transmittance adjusting film 22 may be an aluminum (Al) film or an aluminum compound film. In this case, the light blocking film 24 may be a chromium (Cr) film or a chromium compound film. The light shielding film 24 can be comprised with the material which comprises the transmittance | permeability control film 22, and vice versa.

Meanwhile, the thickness of the transmittance adjusting film 22 may vary depending on the wavelength, phase, or transmittance of incident light. For example, when the wavelength of light incident on the transmittance adjusting film 22 is 300 nm to 500 nm, the transmittance adjusting film 22 may have a thickness of 10% to 70% of the transmittance of the light. In addition, the transmittance adjusting film 22 may have a thickness such that a phase of the incident light may vary by up to 60 ° while the incident light passes through the transmittance adjusting film 22. If the phase of the incident light becomes greater than 60 ° while passing through the transmittance adjusting film 22, distortion may occur in the light intensity due to a phase collision phenomenon. In consideration of this, the thickness of the transmittance control film 22 may be 400 kPa or less. In addition, the thickness of the light shielding film may be about 600 Pa to 1,200 Pa.

The photomask manufacturing method according to the first embodiment of the present invention uses such blank mask.

Specifically, referring to FIG. 3, the primary exposure L1 is performed on the photoresist film PR1 of the blank mask using a laser exposure equipment. The primary exposure L1 is performed only in a given region of the photoresist film PR1, for example, in a region corresponding to the light transmitting portion of the transparent substrate 20. After the primary exposure L1, a primary development step is performed. A photo exposed to the first exposure L1 of the photoresist film PR1 by the first development process is removed and a given region of the light shielding film 24 is exposed on the light shielding film 24 as shown in FIG. 4. The resist film pattern PR1A is formed. The exposed area of the light shielding film 24 is etched using the photoresist film pattern PR1A as an etching mask, and then the transmittance control film 22 formed under the exposed area of the light shielding film 24 is sequentially etched.

The etching may be performed using a wet or dry method. When the transmittance adjusting film 22 and the light shielding film 24 are the same component, the etching may be performed at a time. However, when the main components of the transmittance adjusting film 22 and the light blocking film 24 are different, the etching is performed by first etching the transmittance adjusting film 22, and then the etching conditions for the light blocking film 24 are set. Secondary etching can be performed.

After this etching, the photoresist film pattern PR1A is removed. In this way, as illustrated in FIG. 5, the first hole h1 exposing the light transmitting portion A11 of the transparent substrate 20 to the stack S1 including the transmittance adjusting film 22 and the light blocking film 24. Is formed.

Meanwhile, in the process of forming the first hole h1 to define the transmissive portion A11 in the transparent substrate 20, subsequent secondary exposure is performed on the transparent substrate 20 or on the transmittance control film 22. Can form an alignment mark.

Next, referring to FIG. 6, the photoresist film PR2 filling the first hole h1 is coated on the light shielding film 24. Subsequently, a given region of the photoresist film PR2 is subjected to secondary exposure L2 using the laser exposure equipment. The secondary exposure L2 is performed only for a predetermined region of the photoresist film PR2 corresponding to the transmittance adjusting unit A22 of the transparent substrate 20. Therefore, in the development step following the secondary exposure L2, only the predetermined region of the photoresist film PR2 is removed.

FIG. 7 shows the results of the development process performed after the second exposure L2. Referring to this, the photoresist pattern PR2A exposing a part of the light shielding film 24 between the light transmitting portions A11 on the light shielding film 24. It can be seen that) is formed.

Subsequently, after the developing step, the exposed region of the light shielding film 24 is etched using the photoresist film pattern PR2A as an etching mask. This etching is performed until the transmittance control film 22 is exposed. As a result of this etching, as shown in FIG. 8, a hole h2 (hereinafter referred to as a second hole) in which a part of the transmittance adjusting film 22 is exposed is formed in the light shielding film 24. Light incident on the second hole h2 is incident on the transparent substrate 20 through the transmittance adjusting film 22. Therefore, the transmittance of the transparent substrate 20 of the light incident through the second hole h2 is lower than that of the light incident through the first hole h1 having no transmittance adjusting film 22 on the path. Since the light incident on the transparent substrate 20 through the second hole h2 is transmitted through the transparent substrate 20 according to the thickness of the transmittance adjusting film 22 placed on the path, the second hole eventually becomes the second hole. The transmittance of light incident on the given area A22 of the transparent substrate 20 corresponding to (h2) is different from the transmittance of light incident on the transparent substrate 20 through the first hole h1. For this reason, the region A22 corresponding to the second hole h2 of the transparent substrate 20 is called a transmittance adjusting unit.

Subsequently, when the photoresist film pattern PR2A is removed after the second hole h2 is formed, as shown in FIG. 9, the light transmittance adjusting film 22 including the light transmitting portion A11 and having a uniform thickness is illustrated. The photomask which has this transmittance | permeability adjustment part A22 which covers this upper surface is completed.

FIG. 10 shows a planar shape of the photomask according to the first embodiment of the present invention shown in FIG. 3 to 9 are cross-sectional views taken along the line 3-3 'of FIG.

Referring to FIG. 10, it can be seen that the width and width of the transmittance adjusting unit A22 are wider than the light transmitting unit A11.

Next, a photomask manufacturing method according to a second embodiment of the present invention will be described. In this process, the same reference numerals (symbols) used in the first embodiment are used for the same members as those mentioned in the first embodiment. This fact also applies to the third embodiment described later.

Referring to FIG. 11, the light blocking film 24 is formed on the transparent substrate 20, and the photoresist film PR1 is formed on the light blocking film 24. Only a given region of the photoresist film PR1 is selectively subjected to primary exposure L11 using the laser exposure equipment. A portion of the photoresist film PR1 that is selectively exposed to the first exposure L11 corresponds to a region to be used as a light transmitting portion and a light transmittance adjusting portion of the transparent substrate 20. After the primary exposure L11, a development step is performed to remove the portion of the primary exposure L11 from the photoresist film PR1. As a result of the above development process, as shown in FIG. 12, the photoresist film pattern PR1B on which the predetermined region of the light shielding film 24 is exposed is formed. An exposed area of the light shielding film 24 is etched using the photoresist film pattern PR1B as an etching mask. This etching is performed until the transparent substrate 20 is exposed, and after the etching, the photoresist film pattern PR1B is removed. As a result of this etching, as illustrated in FIG. 13, a plurality of first holes hh1 through which the transparent substrate 20 is exposed are formed in the light shielding film 24. Some of the first holes hh1 expose the light transmitting portion A11 of the transparent substrate 20, and others expose the transmittance adjusting portion A22 of the transparent substrate 20.

In the process of forming the first hole hh1, an alignment mark for subsequent secondary exposure may be formed on the transparent substrate 20.

Next, referring to FIG. 14, a transmittance adjusting film 40 filling the first hole hh1 is formed on the light blocking film 24. The transmittance control film 40 may be the same as the transmittance control film 22 of FIG. 2. The photoresist film PR2 is coated on the transmittance control film 40. Subsequently, secondary exposure L22 is selectively performed using a laser exposure apparatus only in a given region of photoresist film PR2. In this case, the secondary exposure L22 is performed only for a given region of the photoresist film PR2 corresponding to the light transmitting portion A11 of the transparent substrate 20. When the development step is performed after such secondary exposure L22, the region exposed by the secondary exposure L22 in the photoresist film PR2 is removed. As a result, as shown in FIG. 15, the photoresist film pattern PR2B is formed on the limited region of the transmittance control film 40. The photoresist film pattern PR2B is preferably formed at a position covering the transmittance adjusting part A22 of the transparent substrate 20.

Subsequently, the exposed portion of the transmittance control film 40 is etched using the photoresist film pattern PR2B as an etching mask. In this case, the etching may be performed using wet or dry etching. As a result of this etching, as illustrated in FIG. 16, the light transmitting portion A11 of the transparent substrate 20 is exposed.

After the etching, the photoresist film pattern PR2B is removed. In this way, as shown in FIG. 17, the light transmitting part A11 and the transmittance adjusting part A22 are included, and the transmittance adjusting part A22 positioned between the light transmitting parts A11 is covered with the transmittance adjusting film 40. The mask is complete.

Next, a photomask manufacturing method according to a third embodiment of the present invention will be described.

Referring to FIG. 18, a light shielding film 24 is formed on the transparent substrate 20. The photoresist film PR1 is applied onto the light shielding film 24. The selective primary exposure L31 is performed using only the laser exposure equipment on a given region of the photoresist film PR1. The selective primary exposure L31 is preferably performed on a predetermined region of the photoresist film PR1 corresponding to the transmittance adjusting unit A22 of the transparent substrate 20. After the primary exposure L31, a developing step for the photoresist film PR1 is performed. As a result, as shown in FIG. 19, a photoresist film pattern PR1C having a predetermined region of the light blocking film 24 corresponding to the transmittance adjusting unit A22 of the transparent substrate 20 is formed on the light blocking film 24. do. Using the photoresist film pattern PR1C as an etching mask, the exposed portion of the light shielding film 24 is etched until the transparent substrate 20 is exposed, as shown in FIG. 20. A first hole h11 through which the transmittance adjusting part A22 of 20 is exposed is formed. The etching may use a wet or dry etching method. After formation of the first hole h11, the photoresist film pattern PR1C is ashed on the light shielding film 24 as shown in FIG. 21. In the process of forming the first hole h11, an alignment mark for subsequent secondary exposure may be formed.

Referring to FIG. 22, a transmittance adjusting film 50 filling the first hole h11 is formed on the light blocking film 24. The transmittance control film 50 may be the same as the transmittance control film 22 of FIG. 2. A photoresist film pattern PR2C is formed on the transmittance control film 50 to cover the first hole h11 and expose a portion of the transmittance control film 50. In this case, the exposed portion of the transmittance adjusting film 50 is a region corresponding to the light transmitting portion A11 of the transparent substrate 20.

Subsequently, using the photoresist film pattern PR2C as an etching mask, the exposed region of the transmittance adjusting film 50 is etched until the transparent substrate 20 is exposed. The etching process is a process of sequentially etching the transmittance control film 50 and the light shielding film 24, and according to whether the materials constituting the transmittance control film 50 and the light shielding film 24 are identical to each other. As can be a single process or multiple processes. In addition, the etching process may be a wet or dry etching process.

As shown in FIG. 23, the second hole h22 exposing the light transmitting portion A11 of the transparent substrate 20 is exposed to the stack S2 including the light blocking film 24 and the transmittance control film 50 as shown in FIG. 23. Is formed.

After the etching, when the photoresist layer pattern PR2C is removed, the light transmitting portion A11 of the transparent substrate 20 is exposed, and the transmittance adjusting portion A22 of the transparent substrate 20 is exposed as shown in FIG. 24. The photomask covered with the transmittance adjustment film 50 is completed.

While many details are set forth in the foregoing description, they should be construed as illustrative of preferred embodiments, rather than to limit the scope of the invention. For example, one of ordinary skill in the art may use a conventional exposure apparatus used in a semiconductor manufacturing process together with a mask defining a predetermined region of a photoresist film instead of using a laser exposure apparatus. . In addition, the above-described first to third embodiments may be implemented by using a material not mentioned in the above description as a light blocking film or a transmittance control film.

In addition, a separate material film may be further provided between the light shielding film and the transmittance control film. Therefore, the scope of the present invention should not be defined by the described embodiments, but should be determined by the technical spirit described in the claims.

As described above, the photo mask of the present invention includes a transmittance control unit covered with a transmittance adjusting film having a uniform thickness, instead of including a fine pattern that is sensitive to the resolution limit of the exposure equipment. Therefore, by using the photomask of the present invention, the light transmittance of the transmittance adjusting portion of the photomask can be kept constant at all times. Therefore, it is possible to ensure uniformity of the thickness of the photoresist film remaining on the substrate in the LCD manufacturing process, it is possible to greatly improve the conventional problem due to the thickness non-uniformity of the residual photoresist film. Accordingly, the reliability of the manufacturing process of the LCD or PDP can be increased.

In addition, since the photomask of the present invention does not include a fine pattern below the limit resolution of the exposure apparatus in the transmittance adjusting portion like the conventional gray tone mask, it can be easily applied to an LCD manufacturing process requiring a large photomask having a size of 1 μm or more. Can be.

Claims (33)

Transparent substrate; A transmittance control film formed on the transparent substrate; And Including a light blocking film formed on the transmittance control film, A first hole through which the transparent substrate is exposed is formed in a laminate including the transmittance adjusting film and the light blocking film; And a second hole in which the transmittance adjusting film is exposed in the light blocking film. The photomask of claim 1, wherein the transmittance adjusting film is a material film having a thickness of 10% to 70% when the wavelength of incident light is 300 nm to 500 nm. The photomask of claim 1, wherein the transmittance adjusting film is a material film having a thickness that changes a phase of incident light at a maximum of 60 °. The photomask of claim 1, wherein the transmittance adjusting film and the light blocking film are the same material film. Transparent substrate; A light blocking film formed on the transparent substrate; And It includes a transmittance control film formed on the transparent substrate and the light shielding film, First holes are formed in the light blocking film to expose the transparent substrate, The transmittance control film is a photo mask, characterized in that filling only some of the first holes. 6. The photomask according to claim 5, wherein the transmittance adjusting film has a thickness of 10% to 70% when the incident light has a wavelength of 300 nm to 500 nm. 6. The photomask of claim 5, wherein the transmittance adjusting film has a thickness for changing a phase of incident light up to 60 degrees. A first step of forming a laminate including a transmittance adjusting film and a light blocking film sequentially stacked on the transparent substrate; A second step of forming a first hole in the stack to expose the transparent substrate; And And forming a second hole in which the transmittance adjusting film is exposed at a position spaced apart from the first hole of the light blocking film. The method of claim 8, wherein the second step, Applying a photoresist film on the laminate; Selectively exposing a region corresponding to the first hole of the photoresist film; Removing the exposed area of the photoresist film to expose a portion of the stack; Etching the exposed portion of the stack using the photoresist film from which the exposed region is removed as an etching mask; And And removing the photoresist film. The method of claim 8, wherein the third step, Applying a photoresist film filling the first hole on the stack; Selectively exposing a region corresponding to the second hole of the photoresist film; Removing the exposed portion of the photoresist film to expose a portion of the light shielding film; Removing the exposed portion of the light blocking film by using the photoresist film from which the exposed portion is removed as an etching mask; And And removing the photoresist film. 9. The method of claim 8, wherein the transmittance adjusting film is formed to a thickness of 10% to 70% when the wavelength of incident light is 300 nm to 500 nm. The method of claim 8, wherein the transmittance adjusting film is formed to a thickness that changes the phase of incident light at a maximum of 60 °. 10. The method of claim 9, wherein in the second step, an alignment mark is formed in the stack together with the first hole. The method of claim 8, wherein the transmittance adjusting film and the light blocking film are formed of a material film containing a metal having a different etching selectivity. Forming a light shielding film on the transparent substrate; Forming at least two holes through which the transparent substrate is exposed in the light blocking film; And And filling the at least one of the holes with a transmittance control film. 16. The method of claim 15, wherein an alignment mark is formed with the holes in the second step. The method of claim 15, wherein the second step, Applying a photoresist film on the light shielding film; Selectively exposing a region corresponding to the holes of the photoresist film; Removing the exposed area of the photoresist film to expose a portion of the light shielding film; Etching the exposed portion of the light shielding film; And And removing the photoresist film. The method of claim 15, wherein the third step, Forming a transmittance adjusting film filling the holes on the transparent substrate and covering the light blocking film; Applying a photoresist film on the transmittance control film; Selectively exposing the photoresist film around a selected hole among the holes filled with the transmittance control film; Removing the exposed portion of the photoresist film to expose the transmittance control film around the selected hole; Removing the exposed portion of the transmittance control membrane; And And removing the photoresist film. The method of manufacturing a photomask according to claim 15, wherein the transmittance adjusting film is formed to a thickness of 10% to 70% when the wavelength of incident light is 300 nm to 500 nm. 16. The method of claim 15, wherein the transmittance adjusting film is formed to a thickness that changes the phase of incident light at a maximum of 60 degrees. The method of claim 15, wherein the transmittance adjusting film and the light blocking film are formed of a material film containing a metal having a different etching selectivity. Forming a light shielding film on the transparent substrate; A second step of forming a first hole in which the transparent substrate is exposed; Filling the first hole with a transmittance control film; And And forming a second hole in which the transparent substrate is exposed at a position spaced apart from the first hole of the light blocking film. 23. The method of claim 22, wherein in the second step, an alignment mark is formed together with the first hole. The method of claim 22, wherein the second step, Applying a photoresist film on the light shielding film; Selectively exposing a region corresponding to the first hole of the photoresist film; Removing the exposed area of the photoresist film to expose a portion of the light shielding film; Etching the exposed portion of the light shielding film; And And removing the photoresist film. The method of claim 22, wherein the third and fourth steps, Forming a transmittance adjusting film filling the first hole on the light blocking film; Applying a photoresist film on the transmittance control film; Selectively exposing a region corresponding to the second hole of the photoresist; Removing the exposed portion of the photoresist film to expose a portion of the transmittance control film; Sequentially removing the exposed portion of the transmittance control film and the light blocking film thereunder; And And removing the photoresist film. 23. The method of claim 22, wherein the transmittance adjusting film is formed to a thickness of 10% to 70% when the wavelength of incident light is 300 nm to 500 nm. 23. The method of claim 22, wherein the transmittance adjusting film is formed to a thickness that changes the phase of incident light at a maximum of 60 degrees. 23. The method of claim 22, wherein the transmittance adjusting film and the light blocking film are formed of a material film containing a metal having a different etching selectivity. Transparent substrate; A transmittance control film formed on the transparent substrate; A light blocking film formed on the transmittance control film; And And a photoresist film formed on the light shielding film. 30. The blank mask of claim 29, wherein the light shielding film comprises an anti-reflection film. 30. The blank mask according to claim 29, wherein the transmittance adjusting film has a thickness of 10% to 70% when the incident light has a wavelength of 300 nm to 500 nm. 30. The blank mask of claim 29, wherein the transmittance adjusting film has a thickness for changing a phase of incident light at a maximum of 60 degrees. 30. The blank mask of claim 29, wherein the transmittance adjusting film and the light blocking film are material films containing metals having different etching selectivity.

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