TWI310186B - Open-loop slew-rate controlled output driver - Google Patents

Open-loop slew-rate controlled output driver Download PDF

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Publication number
TWI310186B
TWI310186B TW095123972A TW95123972A TWI310186B TW I310186 B TWI310186 B TW I310186B TW 095123972 A TW095123972 A TW 095123972A TW 95123972 A TW95123972 A TW 95123972A TW I310186 B TWI310186 B TW I310186B
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pull
output
signal
selection signal
driver
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TW095123972A
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Chinese (zh)
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TW200713266A (en
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Dong-Suk Shin
In-Hwa Jung
Jin-Han Kim
Chul-Woo Kim
Hyung-Dong Lee
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Hynix Semiconductor Inc
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    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409Read-write [R-W] circuits 
    • G11C11/4096Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4076Timing circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/02Arrangements for writing information into, or reading information out from, a digital store with means for avoiding parasitic signals
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003Modifications for increasing the reliability for protection
    • H03K19/00369Modifications for compensating variations of temperature, supply voltage or other physical parameters
    • H03K19/00384Modifications for compensating variations of temperature, supply voltage or other physical parameters in field effect transistor circuits

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Databases & Information Systems (AREA)
  • Logic Circuits (AREA)
  • Electronic Switches (AREA)
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Description

1310186 九、發明說明: 【發明所屬之技術領域】 本發明係關於一種在一半導體 器’且更明確地說,係關於一種開迴路:::之輪出驅動 動器。 轉換率控制輸出驅 【先前技術】 一輸出驅動器係一用於驅動_ 墊以自一半導體_ —預定負載之輸出 牛導體4置輸出一資料的電路 驅動器廣泛用作輸出驅動器。關 q ’―推挽型 制,轉換率的控制已成問題。 免里輸出驅動器之控 轉換率展示一輸出訊號之電虔 界定為-展示一電壓位準變化與一單位時;率 斜率。 了叫艾間之比率的 同時,可將轉換率分類為兩個 且另-者係-下轉換率。上轉換率展干::;上轉換率, 位準自-低位準變化至一”…/、田輪出訊號之電堡 主回位準時的斜率。另一士品 轉換率展示當輸出訊號之電廢位準自一高:下 ,平于㈣羊在任一情況下,轉換率愈大 斜率愈陡。換言之,輪出4 $ lu之 化。 輪出㈣之電屡位準在-短時間内變 圖1係展示—f知推挽型輸㈣動意電路圖。 如所展示,習知推挽型輸出驅動器包括—上 ::半導體_s)電晶體_及-下細型金屬氧化:: 導體(NMOS)電晶體咖,其用於對一負載電容器。執行: II2692.doc 1310186 充電刼作(意即,一上拉操作)及一放電操作(意即,一 操作)。 根據習知推挽型輸出驅動器,考慮到資料偏斜,—較高 轉換率為有利的。然而,若轉換率增大,則由於由—引腳 所見之電感L1及L2,切換雜訊亦增大。另—方面,若轉換 率減小,則切換雜訊減小;然而,資料偏斜增大。若資料 偏斜之增大嚴重,則可在輸出訊號達到一峰值點之前改變 一輸出訊號之訊號位準。 • 因此,設計習知推挽型輸出驅動器’使得可適當地控制 轉換率很重要。 圖2係描繪具有一用於控制轉換率之預驅動器之另一習 知推挽型輸出驅動器的示意電路圖。 如所展示,習知推挽型輸出驅動器包括一主驅動器,其 具有一上拉PMOS電晶體MP1及一下拉NMOS電晶體MN1 ; 及—預驅動器20,其連接至該主驅動器。 預4區動器20包括一電晶體’其尺寸與主驅動器之尺寸不 • 同。藉由利用此尺寸不同’可藉由控制一自預驅動器2〇輸 出之輸出DRV的增大/減小時序來固定一輸出訊號的轉換 率。 然而’在此情況下,過程、電壓及溫度(PVT)之變化引起 一缺陷。換言之,轉換率可極大地變化,在—慢速條件及 一快迷條件下,其最大值約三倍大於一最小值◊上述轉換 率變化對訊號完整性具有一負面影響。 因此,已開發了一用於不管PVT變化而維持一轉換率的 II2692.doc 1310186 技術。 圖3係說明用於藉由調節一預驅動節點處之波形來控制 轉換率之另一習知推挽型輸出驅動器的示意電路圖。 參看圖3,習知推挽型輸出驅動器包括一預驅動器單元, 其用於響應於一啟用訊號en及一數位權重dw而預驅動—資 料訊號IN; -預驅動節點波形控制單元,其用於響應於根 據PVT變化而確定之控制碼(例如,c〇、^、f〇、^及⑺^ 調節預驅動節點之電容;一主驅動器單元,其用於響應於 預驅動節點之一電壓位準而驅動一輸出墊。 中所示^知推挽型輸出驅動器藉由調節預驅動單 凡處之波形來控制轉換率。換言之 a 右預駆動卽點之轉換 悝定值,則藉由預驅動節點而驅 早70的轉換率可保持為一恆定值。 益 預驅動節點波形控制單元 示)而產生之控制碼,以控制㈣動〜/州貞測電路(未圖 控制碼…大睥箱 動即點之電容。此處,當 減+。另一方而電令增大以使得轉換率 容減小以使得轉換率增大。 彳,預驅動節點之電 因此’轉換率可經控制以對p 此情況下,需I士 θ i★ 化不敏感。然而,在 放電。 置功率消耗來對預驅動節點之電容充電/ 同時’因為將預驅動節點之 換電晶體之電阻應非常低。因此…為-純電容,所以切 且因此,增加寄生- 电晶體之尺寸應較大, 生7"件以防止高速操作。 I12692.doc 1310186 问時,在2003年的JSSC中已揭示了 一種用於藉由使用一 鎖相迴路(PLL)來控制轉換率之輸出驅動器。此輸出驅動器 與一習知輸出驅動器相比較對於充電/放大增大了操作速 度並減小了功率消耗。 、 然而’因為包括PLL,所以由於一抖動累積而難以精確 地偵測PVT變化。因為輸出驅動器係一高階系統,所以亦 難以設計該輸出驅動器。另夕卜,因為輸出驅動器係一具有 一壓控振盈器(VC0)之閉迴路電路,所以其花費大量時=來 完成一鎖定操作,且晶片之尺寸增大。 又舉例而言’在2003年的JSSC中已揭示了 一種用於藉由 自一延遲鎖定迴路(DLL)產生一訊號來控制轉換率之^括 於A- i Gb/S/Pin 5 i 2_MB DDR2 SDRAM中的輸出驅動器二與 使用PLL相比較,一鎖定時間相對減少;然而,因為輸出驅 動器亦包括-如同包括PLL之輸出驅動器的類比區塊,所以 要求一較大尺寸,且功率消耗增大。 同時,在2004年的ISSCC中已揭* 了一種具有—速度鎖 定迴路(SLL)之輸出驅動器。在此情況下,因為輪出驅㈣ 具有一數位結構,所以相對易於設計該輸出驅動器。然而, 因為輸出驅動器係一如同包括PLL及包括夕故 οσ ^輸出驅動 器的閉迴路電路,所以完成鎖定操作的所要之 【發明内容】 長。 根據本發明之一態樣,提供一種在一半導體裝置中 因此’本發明之一目標係、提供一種具有—開迴路結構(一 類比區塊除外)之能夠控制轉換率的輸出驅動器及其方去 使 112692.doc 1310186 之轉換率控制輸出驅動器’其包括:一 pvt變化偵測單元, 其具有一用於接收一參考時脈之延遲線,以偵測一根據過 私、電壓及溫度(PVT)變化而確定之延遲線的延遲量變化; 一選擇訊號產生單元,其用於產生一與一藉由PVT變化債 測單70而產生之偵測訊號對應的驅動選擇訊號;及一輪出 驅動單,其具有受控於一輸出資料及驅動選擇訊號的複 數個驅動器單元,其用於用一與ρντ變化對應之驅動強度 來驅動一輸出端子。1310186 IX. Description of the Invention: TECHNICAL FIELD OF THE INVENTION The present invention relates to a semiconductor device and, more particularly, to an open circuit::: wheel drive. Conversion Rate Control Output Drive [Prior Art] An output driver is used to drive a _ pad to output a data from a semiconductor _-predetermined load. The circuit driver is widely used as an output driver. Off q ’-Push-pull type, the control of the conversion rate has become a problem. Control of the free output driver The conversion rate shows the output signal of an output signal defined as - shows a voltage level change with one unit; rate slope. At the same time as the ratio of Ai, the conversion rate can be classified into two and the other-system-down conversion rate. The up-conversion rate is::; the up-conversion rate, the level from the low-level change to a ".../, the slope of the electric train's main return on time. The other conversion rate is displayed as the output signal. The electric waste level is from a high level: the lower, flat (4) sheep in any case, the greater the conversion rate, the steeper the slope. In other words, the round out 4 $ lu. The round (4) of the electric repeatedly in the short-term Figure 1 shows a schematic diagram of a push-pull type (four) kinetic circuit diagram. As shown, the conventional push-pull type output driver includes -upper::semiconductor_s) transistor_and-lower metal oxide:: conductor (NMOS A transistor coffee for use in a load capacitor. Execution: II2692.doc 1310186 Charging operation (ie, a pull-up operation) and a discharge operation (ie, an operation). According to the conventional push-pull output The driver, considering the data skew, the higher conversion rate is favorable. However, if the conversion rate is increased, the switching noise is also increased due to the inductances L1 and L2 seen by the - pin. When the conversion rate is reduced, the switching noise is reduced; however, the data skew is increased. If the increase in the skew is severe, the signal level of an output signal can be changed before the output signal reaches a peak point. • Therefore, it is important to design a conventional push-pull output driver to make it possible to properly control the conversion rate. A schematic circuit diagram depicting another conventional push-pull output driver having a pre-driver for controlling the slew rate is shown. As shown, the conventional push-pull output driver includes a main driver having a pull-up PMOS transistor MP1 And pulling the NMOS transistor MN1; and the pre-driver 20, which is connected to the main driver. The pre-zone 4 includes a transistor 'the size of which is different from the size of the main driver. By using this size differently' The conversion rate of an output signal can be fixed by controlling the increase/decrease timing of the output DRV from the output of the pre-driver 2. However, in this case, a change in process, voltage, and temperature (PVT) causes a defect. In other words, the conversion rate can vary greatly, in the case of slow conditions and a fast condition, the maximum value is about three times greater than a minimum value. The above conversion rate changes to signal integrity. There is a negative impact. Therefore, an II2692.doc 1310186 technique has been developed for maintaining a slew rate regardless of PVT variations. Figure 3 illustrates another method for controlling the slew rate by adjusting the waveform at a pre-drive node. A schematic circuit diagram of a conventional push-pull output driver. Referring to FIG. 3, a conventional push-pull output driver includes a pre-driver unit for pre-driving in response to an enable signal en and a digital weight dw - a data signal IN a pre-drive node waveform control unit for adjusting a capacitance of the pre-drive node in response to a control code determined according to a change in PVT (eg, c〇, ^, f〇, ^, and (7)^; a main driver unit, An output pad is driven in response to a voltage level of one of the pre-drive nodes. The push-pull output driver shown in the figure controls the conversion rate by adjusting the waveform of the pre-driver. In other words, the conversion rate of the right pre-pushing point can be maintained at a constant value by the pre-drive node. The pre-driver node waveform control unit shows the control code generated to control (four) moving ~ / state detection circuit (not shown control code ... large box moving point capacitance. Here, when minus +. the other side The electric command is increased to reduce the slew rate so that the slew rate is increased. 彳, the pre-drive node is electrically so that the 'conversion rate can be controlled to be p in this case, which is insensitive to I. In the discharge. Set the power consumption to charge the capacitor of the pre-drive node / at the same time 'because the resistance of the pre-drive node's transistor should be very low. Therefore ... is - pure capacitance, so cut and therefore, increase parasitic - transistor The size should be larger, and the 7" piece should be used to prevent high-speed operation. I12692.doc 1310186 When asked, an output for controlling the slew rate by using a phase-locked loop (PLL) has been disclosed in the JSSC of 2003. Driver. This output driver increases operating speed and reduces power consumption for charging/amplification compared to a conventional output driver. However, 'because of the PLL, it is difficult to accurately detect due to a jitter accumulation. PVT changes. Because the output driver is a high-order system, it is also difficult to design the output driver. In addition, because the output driver is a closed-loop circuit with a voltage-controlled vibrator (VC0), it takes a lot of time = A locking operation is completed and the size of the wafer is increased. For example, 'JSS in 2003 has disclosed a method for controlling the conversion rate by generating a signal from a delay locked loop (DLL). A-i Gb/S/Pin 5 i 2_MB DDR2 SDRAM output driver 2, compared to the use of PLL, a lock time is relatively reduced; however, because the output driver also includes - like the analog block including the PLL output driver, A larger size is required, and power consumption is increased. Meanwhile, an output driver with a speed lock loop (SLL) has been disclosed in the ISSCC in 2004. In this case, because the wheel drive (4) has a digit Structure, so it is relatively easy to design the output driver. However, because the output driver is like a closed loop circuit including a PLL and a sσ ^ output driver SUMMARY OF THE INVENTION According to one aspect of the present invention, there is provided an object of the present invention, which provides an open circuit structure (except for an analog block). The output driver capable of controlling the slew rate and the conversion rate control output driver of the 112692.doc 1310186 include: a pvt change detecting unit having a delay line for receiving a reference clock to detect Measuring a delay amount change of the delay line determined according to a change in the privacy, voltage, and temperature (PVT); a selection signal generating unit for generating a detection signal generated by the PVT change debt test 70 Corresponding drive selection signal; and a round drive list having a plurality of driver units controlled by an output data and a drive selection signal for driving an output terminal with a drive strength corresponding to a change in ρντ.

根據本發明之另一態樣,提供一種用於驅動一半導體裝 置之輸出的方法,其包括以下步驟:a)偵測一延遲線根 據過程、電壓及溫度(PVT)變化的延遲量變化,該延遲線接 收-參㈣脈;b)產生-與步驟a)之偵測結果對應的驅動選 擇π號,C)藉由一輸出資料及驅動選擇訊號而控制複數個 驅動器單元’ II此用-與PVT變化對應之驅動強度來驅動 一輸出端子,其中驅動器單元具有不同驅動強度。 【實施方式】 下文中將參看隨附圖式詳細描述一根據本發明之輪 動器。 圆—诉根據本發明 輸出驅動器的方塊圖。 如所展示,轉換率控制輸出驅動器包括:-延遲線, ^於接收:參考時脈句ef;— ρντ(過程、電壓及^ 丈化偵測單70 100 ,其用於偵測一歸因於一PVT變化的延 線之條件變化;一選擇訊號產生單元20。,其用於產生一 II2692.doc •10- 1310186 於接收自包括於延遲線Π0中之延遲單元DC1至DCn輪出的 多相時脈訊號;及一 N位元暫存器125,其用於響應於彖考 時脈clk_ref而鎖存η個反轉器INV1至INVn之一輸出。 切換偵測單元130對N位元暫存器125之兩個相鄰位元執 行一邏輯"互斥或"運算,藉此偵測數位化器12〇之輸出的切 換點。如圖5中所示,切換偵測單元13〇包括心丨個反轉器, 其用於將N位元暫存器125之每一輸出反轉(在圖5中標記為 一反轉記號);及n-Ι個”及"(AND)閘(意即, 1) ’其用於對-自n-1個反轉器輸出之每一位元的經反轉版 本與該每-位元之下-位元執行一邏輯”及”運算以藉此產 生偵測訊號(意即,㈣㈤〉)。因為N位元暫存器125之最後 位元的下一位元不存在,所以包括n-Ι個反轉器及w個"及" 閘。 同時,包括於數位化器120中之N位元暫存器125可用_ D型正反器(F/F)來體現,其用於接收反轉器侧至啊之 2出作為資料輸心且心接收參考時脈仙―蝴經延遲 之机號作為時脈輸入。 〇型正反器可易於用圖 式鎖存器來體現。中所-之商—3主從In accordance with another aspect of the present invention, a method for driving an output of a semiconductor device is provided, the method comprising the steps of: a) detecting a delay amount change of a delay line according to a process, voltage, and temperature (PVT) change, Delay line reception - reference (four) pulse; b) generation - drive selection corresponding to the detection result of step a) π number, C) control of a plurality of driver units by an output data and driving selection signal ' II The PVT changes the drive strength corresponding to drive an output terminal, wherein the driver unit has different drive strengths. [Embodiment] Hereinafter, a wheeled wheel according to the present invention will be described in detail with reference to the accompanying drawings. Circle - A block diagram of the output driver in accordance with the present invention. As shown, the slew rate control output driver includes: - a delay line, ^ in the receive: reference clock ef; - ρντ (process, voltage, and detection page 70 100, which is used to detect one due to a change in the condition of the extension of a PVT change; a selection signal generating unit 20 for generating a II2692.doc •10-1310186 for the multiphases received from the delay units DC1 to DCn included in the delay line Π0 a clock signal; and an N-bit register 125 for latching one of the n inverters INV1 to INVn in response to the reference clock clk_ref. The switching detection unit 130 temporarily stores the N bits. Two adjacent bits of the device 125 perform a logic "mutual exclusion&" operation, thereby detecting the switching point of the output of the digitizer 12. As shown in Figure 5, the switching detection unit 13 includes a heartbeat inverter for inverting each output of the N-bit scratchpad 125 (labeled as a reverse mark in Figure 5); and n-Ι" and "(AND) gates (meaning, 1) 'It is used to perform a logic on the inverted version of each bit from the n-1 inverter output and the per-bit lower-bit And the operation to generate a detection signal (ie, (4) (5)>). Because the next bit of the last bit of the N-bit scratchpad 125 does not exist, so includes n-Ι inverters and w At the same time, the N-bit register 125 included in the digitizer 120 can be embodied by a _D-type flip-flop (F/F), which is used to receive the inverter side. The 2 output is used as the data input heart and the heart receives the reference clock. The delay is the clock input. The 正 type flip-flop can be easily represented by the graphic latch. The middle - the business - 3 main From

PowerPC 6〇3主從式鎖存器係一具有—短 低功率回饉直接路k及一 —充a主 Μ。當'時舰處於-邏輯低位準時,The PowerPC 6〇3 master-slave latch has a short-low power return direct path k and a full-charge master. When the 'time ship is at the logic low level,

傳逆至&之—開關的傳輸閑打開,以將-輸入D 1寻运至—節點A,且一 别八u ^ . 鎖存器之一時控反轉器開啟以祛~ —輪出Q維持於前—狀態。 符益開啟以使仵 H2692.doc •12- Ι31〇186 圖7係展示圖5中所示之ρντ變化偵測單元1〇〇之一操作 的方塊圖。 假設包括於延遲線丨1〇中的延遲單元之數目為2〇,則延遲 線110接收參考時脈clk—ref以產生具有一恆定相位差之2〇 個多相時脈。 同時,若在一特殊相位處捕獲多相時脈,則產生一轉變 點,其中每一多相時脈自"l”變化為"〇"。所有多相時脈具有 在一電源電壓Vdd與一接地電壓Vss之間的預定電廢位準 (不包括電源電壓Vdd及接地電壓Vss之電壓位準)。 然而,經由包括於數位化器12〇中之每一反轉器,由於一 反轉窃之一再生特性,多相時脈具有一”丨,,或的數位值。 1由N位元暫存器i 2 5而鎖存此等數位值。此鎖存時間點(意 即捕獲多相時脈之時間點)藉由參考時脈Clk_ref所延遲 的延遲里(在圖7中展示為重疊之複數個反轉器)來確定。 同時,包括於數位化器120中之反轉器防止一負載電容當 〇括於N位元暫存器丨2 5中之d型正反器切換時發生變化以 使得延遲單^之—延遲量不管-資料(即使該資料變化為 1"或”0")而可維持為一恆定延遲量(τ)。 同%,切換偵測單元13〇偵測一轉變點,其中Ν位元暫存 器⑵之-輸出自τ變化為”卜換言之,考慮到延遲單元, 债測輸出自”r’變化為τ之延遲單元。因此,因為僅们則n 位元暫存器125之一輸出"”變化為”"的點,所以可簡單 地用—反轉器及一”及”開來體現邏輯"互斥或"閘。 口此PVT變化偵測單元i⑻藉由^貞測根據變化而變 112692.doc 1310186 化的延遲線110之延遲變化來偵測PVT變化。換言之,ρντ 變化偵測單元100計算延遲單元的數目,其每一者在一當前 pvt狀態下輸出” 。 田月1 圖8係描繪圖4中所示之選擇訊號產生單元2〇〇的示意電 路圖。 如所展示,選擇訊號產生單元2〇〇包括一第一至—第三驅 動選擇訊號產生單元21〇至23(),其用於響應則貞測訊號之The transmission is reversed to & - the transmission of the switch is idle, to find - input D 1 to - node A, and one of the eight u ^. One of the latches is controlled by the inverter to turn on Q. Stay in front - state. Fuyi is turned on so that H2692.doc •12-Ι31〇186 Fig. 7 is a block diagram showing the operation of one of the ρντ change detecting units 1 shown in Fig. 5. Assuming that the number of delay cells included in the delay line 为1〇 is 2〇, the delay line 110 receives the reference clock clk_ref to generate 2〇 multi-phase clocks having a constant phase difference. At the same time, if a multiphase clock is captured at a particular phase, a transition point is generated, where each multiphase clock changes from "l" to "〇". All multiphase clocks have a supply voltage The predetermined electrical waste level between Vdd and a ground voltage Vss (excluding the voltage levels of the power supply voltage Vdd and the ground voltage Vss). However, via each of the inverters included in the digitizer 12, due to One of the regenerative characteristics of the reverse stealing, the multiphase clock has a "丨," or a digit value. 1 These equal-bit values are latched by the N-bit scratchpad i 2 5 . This latching time point (i.e., the point in time at which the multiphase clock is captured) is determined by the delay delayed by the reference clock Clk_ref (shown as an overlapping plurality of inverters in Fig. 7). At the same time, the inverter included in the digitizer 120 prevents a load capacitance from changing when the d-type flip-flops included in the N-bit register 丨25 are switched so that the delay is delayed. Regardless of the data (even if the data changes to 1" or "0"), it can be maintained as a constant delay amount (τ). In the same %, the switching detection unit 13 detects a transition point, wherein the bit register (2) - The output changes from τ to "In other words, considering the delay unit, the debt measurement output changes from "r" to the delay unit of τ. Therefore, because only one of the n-bit registers 125 outputs "quote" Change to the point of "", so simply use - invertor and one" and "open" to reflect the logic "mutual exclusion" or "gate." This PVT change detection unit i (8) by ^ 贞 according to changes The delay variation of the delay line 110 is changed to detect the PVT change. In other words, the ρντ change detecting unit 100 calculates the number of delay units, each of which outputs "" in the current pvt state. Tian Yue 1 Fig. 8 is a schematic circuit diagram depicting the selection signal generating unit 2A shown in Fig. 4. As shown, the selection signal generating unit 2 includes a first to third driving selection signal generating unit 21A to 23() for responding to the signal.

位元的-部分而分別產生一第一至一第三上拉/下拉驅動 選擇訊號Sl/Slb至S3/S3b。 如上述,假設延遲單元之數目為2〇。在此情況下,藉由 包括於PVT變化偵測單元100中之㈣奐偵測單元13〇來產生 1 9位元偵測訊號〇< i: i 9>。 詳言之,第一驅動選擇訊號產生單元21〇包括一第一”反 或"(NOR)閘N0R1,其用於接收偵測訊號位元知中的 位元ο<5·9>,一第一傳輸閘TG1,其用於響應於一自第一 "反或”閘NOR1輸出的輪出訊號AA及該輸出訊號aa之一經 反轉版本(意即’ BB)而選擇性地輸出接地電壓Vss的一經反 轉版本作為第一上拉驅動選擇訊號S1 ; 一第二傳輸閘 TG2 ’其用於響應於輸出訊號AA及經反轉之輸出訊號bb而 選擇性地輸出接地電壓Vss作為第一下拉驅動選擇訊號 S 1 b,帛一傳輸閘TG3,其用於響應於輸出訊號及經反 轉之輸出訊號BB而選擇性地輸出電源電M Vdd的一經反轉 版本作為第一上拉驅動選擇訊號S1 ;及一第四傳輸閘 TG4其用於響應於輪出訊號AA及經反轉之輸出訊號邱而 U2692.doc -14- 1310186 選擇性地輸出電源電壓Vdd作為第—下拉驅動選擇訊號 S 1 b ° 此處,交替控制第一及第二傳輸閘TG丨及丁之組以及第 三及第四傳輸閘TG3及TG4之組,以防止第一上拉及下拉驅 動選擇訊號S1及sib的每一輸出端子浮動。 第一驅動選擇訊號產生單元220包括一第二"反或”閘 N〇R2,其接收偵測訊號位元0< 1:19>中的位元〇< 1 〇: 14> ; -第五傳輪閘TG5,其用於響應於一自第二"反或”閘n〇r2 • 輸出的輸出訊號cc及該輸出訊號cc之一經反轉版本(意 即,DD)而選擇性地輸出接地電壓Vss的經反轉版本作為第 一上拉驅動選擇訊號S2; 一第六傳輸閘TG6,其用於響應 於輸出訊號CC及經反轉之輸出訊號DD而選擇性地輸出接 地電壓vss作為第二下拉驅動選擇訊號S2b ; 一第七傳輸閘 TG7其用於響應於輸出訊號cc及經反轉之輸出訊號1)1)而 選擇性地輸出電源電壓Vdd的經反轉版本作為第二上拉驅 動選擇訊號S2 ;及一第八傳輪閘TG8,其用於響應於輸出 _ &號CC及經反轉之輸出訊號DD而選擇性地輸出電源電壓 vdd作為第二下拉驅動選擇訊號S2b。 吏父潫控制第五及第六傳輸間T G 5及T G 6之組以及第 七及第八傳輸閘TG7及TG8之組,以防止第二上拉及下拉驅 動選擇訊號S2及S2b的每一輸出端子浮動。 第三驅動選擇訊號產生單元230包括一第三,,反或”閘 其用於接收價測訊號位元0< 1:19>中的位元〇< 1 5 . 19> ; 一第九傳輸閘TG9,其用於響應於—自第三,,反或”閘 112692.doc •15- 1310186A first to a third pull-up/pull-down drive selection signal S1/Slb to S3/S3b is generated for each of the bits. As described above, it is assumed that the number of delay units is 2 〇. In this case, the 19-bit detection signal 〇 < i: i 9 > is generated by the (4) detection unit 13 包括 included in the PVT change detecting unit 100. In detail, the first driving selection signal generating unit 21 includes a first "reverse" or "NOR" gate N0R1 for receiving the bit in the detection signal bit ο <5·9> The first transmission gate TG1 is configured to selectively output the ground in response to an inverted signal AA outputted from the first "anti-"gate NOR1 output and an inverted version (ie, 'BB) of the output signal aa An inverted version of the voltage Vss is used as the first pull-up drive selection signal S1; a second transfer gate TG2' is used to selectively output the ground voltage Vss in response to the output signal AA and the inverted output signal bb. a pull-down drive selection signal S 1 b, a transmission gate TG3 for selectively outputting an inverted version of the power supply M Vdd as the first pull-up in response to the output signal and the inverted output signal BB The drive selection signal S1; and a fourth transfer gate TG4 are used for selectively outputting the power supply voltage Vdd as the first-down drive selection in response to the turn-off signal AA and the inverted output signal U2692.doc -14-1310186 Signal S 1 b ° here, alternately control the first and second Shu transmission gate TG and butoxy groups and the third and fourth transfer gates TG3 and TG4 of the group, to prevent the first pull-up and pull-down driver output terminal of each floating sib selection signal S1 and the. The first driving selection signal generating unit 220 includes a second "reverse" gate N〇R2, which receives the bit in the detection signal bit 0 <1:19>< 1 〇: 14>; a five-way wheel brake TG5 for selectively responding to an output signal cc outputted from the second "reverse" gate n〇r2 • and an inverted version (ie, DD) of the output signal cc The inverted version of the output ground voltage Vss is used as the first pull-up drive selection signal S2; a sixth transfer gate TG6 is configured to selectively output the ground voltage vss in response to the output signal CC and the inverted output signal DD As a second pull-down drive selection signal S2b; a seventh transfer gate TG7 for selectively outputting the inverted version of the power supply voltage Vdd as a second in response to the output signal cc and the inverted output signal 1) 1) Pull-up drive selection signal S2; and an eighth transfer gate TG8 for selectively outputting the power supply voltage vdd as the second pull-down drive selection signal in response to the output _ & CC and the inverted output signal DD S2b. The father controls the group of the fifth and sixth transmission rooms TG 5 and TG 6 and the groups of the seventh and eighth transmission gates TG7 and TG8 to prevent each output of the second pull-up and pull-down drive selection signals S2 and S2b. The terminal floats. The third driving selection signal generating unit 230 includes a third, reverse or "gate" for receiving the bit in the price measurement signal bit 0 <1:19><1 5 . 19>; a ninth transmission Gate TG9, which is used to respond to - from the third, reverse or "gate 112692.doc • 15 - 1310186

輸出的輸出訊號££及該輸出訊號EE2 一經反轉版本 F)而選擇性輸出接地電壓Vss的經反轉版本作為第 '上拉驅動選擇訊號S3 ;—第十傳輸閘TG10,^•用於響應 於輸出成#u EE及經反轉之輸出訊號FF而選擇性地輸出接 也电壓Vss作為第三下拉驅動選擇訊號s3b; 一第十一傳輸 閉代U ’其用於響應於輸出訊號EE及經反轉之輸出訊號FF 而k擇性地輸出電源電壓Vdd的經反轉版本作為第三上拉 驅動4擇δί1號S3 ;及一第十二傳輸閘tgi2,其用於響應於 輸出Λ號EE及經反轉之輸出訊號FF而選擇性地輸出電源 电壓州作為第三下拉駆動選擇Ifl號S3b。 …此處交替控制第九及第十傳輸閘TG9& 1(31〇之組以及 第十及第十二傳輸閘TGU及TG12之組,卩防止第三上拉 及下拉驅動選擇訊號S3及S3b的每-輸出端子浮動。 同時圖8中所不之選擇訊號產生單元2〇〇僅為一實例。 存在藉由使用領測訊號位元Q<i:i9>來產生驅動選擇訊號 當在延遲單元之一初始狀態處發生一轉變時,無需對 pv:變化之補償。因此,如圖8中所示’並未使用偵測訊號 ,其 該等 具 112692.doc 1310186 動選擇訊號S3b。 同時,第一至第三辅助驅動器單元具有不同驅動強度。 換言之,在第一至第三辅助上拉PMOS電晶體p 1至p3中,第 一輔助上拉PMOS電晶體P1具有最大尺寸,且第三輔助上拉 PMOS電晶體P3具有最小尺寸。同樣地,在第一至第三辅助 下拉NMOS電晶體N1至N3中,第一輔助下拉NM〇s電晶體 N1具有最大尺寸,且第三輔助下拉NM〇s電晶體N3具有最 小尺寸。 圖1 0係描述圖4至圖9中所示之輸出驅動器之一操作的方 塊圖。 已參看圖5詳細描述了 PVT變化偵測單元1〇〇之操作。在 圖1〇中,在第19延遲單元處發生一時脈轉變。在此情況下, 在偵測訊號位元〇<1:19>中,僅自第18 ”及"閘輪出之位元 0<18>為”1”,且其他位元為,,〇,,。 同時,如參看圖8之上述,偵測訊號位元〇<18>僅輸入至 、擇m生單元200中之第三驅動選擇訊號產生單元 23〇,且因此,藉由第三驅動選擇訊號產生單元23〇將第三 上拉驅動選擇汛號S3產生為一邏輯高位準,且將第三下拉 驅動選擇訊號S3b產生為一邏輯低位準。 、…3〖下將第一及第二上拉驅動選擇訊號S1及S2撤 、:為^輯低位準,且將第—及第二下拉驅動選擇訊號^ 及S2b撤銷為一邏輯高位準。The output signal of the output and the output signal EE2 are outputted by the inverted version F) and the inverted version of the ground voltage Vss is selectively output as the first pull-up drive selection signal S3; the tenth transmission gate TG10, ^• is used for Selecting the output voltage Vss as the third pull-down drive selection signal s3b in response to the output as #u EE and the inverted output signal FF; an eleventh transmission closed generation U' for responding to the output signal EE And the inverted output signal FF and k selectively output the inverted version of the power supply voltage Vdd as the third pull-up drive 4 selects δί1 S3; and a twelfth transfer gate tgi2 for responding to the outputΛ The number EE and the inverted output signal FF selectively output the power supply voltage state as the third pull-down selection Ifl number S3b. ...to alternately control the ninth and tenth transmission gates TG9& 1 (the group of 31〇 and the group of the tenth and twelfth transmission gates TGU and TG12) to prevent the third pull-up and pull-down drive selection signals S3 and S3b Each output terminal floats. At the same time, the selection signal generating unit 2 图 in Fig. 8 is only an example. There is a driving selection signal generated by using the pilot signal bit Q<i:i9> when in the delay unit When a transition occurs at an initial state, there is no need to compensate for the pv: change. Therefore, as shown in Figure 8, 'the detection signal is not used, and the 112692.doc 1310186 selects the signal S3b. The third auxiliary driver unit has different driving strengths. In other words, among the first to third auxiliary pull-up PMOS transistors p1 to p3, the first auxiliary pull-up PMOS transistor P1 has the largest size, and the third auxiliary pull-up The PMOS transistor P3 has the smallest size. Similarly, in the first to third auxiliary pull-down NMOS transistors N1 to N3, the first auxiliary pull-down NM〇s transistor N1 has the largest size, and the third auxiliary pull-down NM〇s is electrically Crystal N3 has the smallest size. Figure 10 is a block diagram depicting the operation of one of the output drivers shown in Figures 4 through 9. The operation of the PVT change detecting unit 1 is described in detail with reference to Figure 5. In Figure 1, in the 19th A clock transition occurs at the delay unit. In this case, in the detection signal bit 〇<1:19>, only the position 0 <18> from the 18th and "gates is "1" And the other bits are, 〇, 。. Meanwhile, as described above with reference to FIG. 8, the detection signal bit 〇 <18> is input only to the third drive selection signal generating unit 23 in the m-cell 200. In other words, the third pull-up drive selection signal S3 is generated as a logic high level by the third drive selection signal generating unit 23, and the third pull-down drive selection signal S3b is generated as a logic low level. ... 3 [1] The first and second pull-up drive selection signals S1 and S2 are removed, and the first and second pull-down drive selection signals ^ and S2b are deactivated to a logic high level.

帛辅助驅動器單元(P1,N1)與預設驅動器單元 N〇)一起操作’以驅動輸出端子。即,若輸出資料IN H2692.doc -18- 1310186 為一邏輯低位準,則開啟 盘苑弟輔助上拉PMOS電晶體Ρ〗,以 與預扠上拉PMOS電晶體ρη , 电曰曰體Ρ0 一起驅動輸 下,預設上拉Ρ Μ 〇 S電晶體 隹^兄 ®尸U育先刼作,且隨後第一 拉PMOS電晶體Ρ〗在延遲 上 ,PA/rnc^ 遲 延遲ϊ之後操作,以與預設上 拉PMOS電晶體p〇_起驅動 動輸出端子。其兩個反轉器同時開 啟,功率雜訊增大;然而, ^ 、避防止功率雜訊增大。 儘管已作為一實例來說明:當啟動第三上拉驅動選擇訊 及^下拉驅動選擇訊號饥時,預設驅動器及第一輔 助驅動器單元一起驅動輪丨 d。 ^ 勒彻出15動态,但根據所偵測之PV丁 麦化,可選擇另一輔助驅_ g i 〇〇 纫益早70或可僅操作預設驅動器 單元而無一輔助驅動5|罝;。卜 "早凡虽啟動偵測訊號位元〇< 1 :4> 之一個位元時,僅操作預設驅動器單元。 同時,上述操作係開始於參考時脈clk ref之一下降邊緣 且直至參考時脈elk_ref之下—上升邊緣完成。換言之,因 為採用開迴路結構,所以可滿足所謂之按需求時脈⑷蛛 on-demand),意即,可在一個時脈循環内偵測ρντ變化且可 產生驅動選擇訊號。 根據基於習知PLL或DLL之輸出驅動器,由於充電/放電The 帛Auxiliary Driver Unit (P1, N1) operates in conjunction with the Preset Driver Unit N〇) to drive the output terminals. That is, if the output data IN H2692.doc -18- 1310186 is a logic low level, then the Pan Yuandi auxiliary pull-up PMOS transistor is turned on to be combined with the pre-push-up PMOS transistor ρη, the electric body Ρ0 Drive the drive, the preset pull-up Μ 〇 S transistor 隹 ^ brother 尸 尸 U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U U The driving output terminal is driven by a preset pull-up PMOS transistor p〇_. The two inverters are turned on at the same time, and the power noise is increased; however, ^ prevents the power noise from increasing. Although it has been described as an example, when the third pull-up drive selection signal and the pull-down drive selection signal are activated, the preset driver and the first auxiliary driver unit drive the rim d together. ^ Lecher out 15 dynamics, but according to the detected PV wheat, another auxiliary drive can be selected _ gi 〇〇 益 益 early 70 or can only operate the preset drive unit without an auxiliary drive 5 | 罝; . Bu "Whenever a bit of the detection signal bit 〇<1:4> is activated, only the default drive unit is operated. At the same time, the above operation begins with the falling edge of one of the reference clock clk ref and until the reference clock elk_ref - the rising edge is completed. In other words, because of the open loop structure, the so-called on-demand (4) on-demand can be satisfied, that is, the ρντ change can be detected in one clock cycle and the drive selection signal can be generated. According to the output driver based on the conventional PLL or DLL, due to charging/discharging

之類比方法,故鎖定時間相對較長,且因此無法實施按J 求時脈。另外,因為包括類比區塊,所以晶片尺寸及功率 消耗增大。 另方面,根據本發明之較佳實施例,因為ρντ變化偵 測單元1 00及驅動選擇訊號產生單元200之所有電路皆用— CMOS數位邏輯予以建構,所以輸出驅動器可用—較小尺寸 112692.doc •19· 1310186 來體現,功率消耗可減 B 子目對易於設計( 動位二—輸入訊號之啟動位準或-輪出訊號之啟 動位準:改變上述邏輯及M〇s電晶體的類型及位置。另 外,儘官延遲單元之數目為20 為另一數目。 K遲早凡之數目可變化 :二:為對於輸出驅動器之—控制而一 :盾::已足夠’所以藉由電源切斷可減小功率消耗。另外, ”白知輸出驅動器相比較,輸出 體現。 罕乂務j出驅動器可用-較小尺寸來 本申請案含有與分別在鳩年9月28曰及 日在韓國專利局申 牛U月2 9The analogy method, so the lock time is relatively long, and therefore it is impossible to implement the clock according to J. In addition, since the analog block is included, the chip size and power consumption increase. On the other hand, according to the preferred embodiment of the present invention, since all circuits of the ρντ change detecting unit 100 and the driving selection signal generating unit 200 are constructed by using CMOS digital logic, the output driver is available - the smaller size 112692.doc • 19· 1310186 to reflect that the power consumption can be reduced by the sub-item for easy design (position 2 - the start level of the input signal or the start level of the turn-off signal: change the above logic and the type of M〇s transistor and In addition, the number of delay units is 20 for another number. The number of delays can be changed: 2: For the output driver - control one: shield:: is enough 'so cut off by power Reducing power consumption. In addition, "Baizhi output driver is compared with the output. The 乂 j j out drive is available - the smaller size comes with this application contained in the Korean Patent Office on September 28th and the following day respectively Cow U month 2 9

Dnw 專中請㈣2GG5_9G853號及 第2005-133986號相關的本ef, 的方式併人本文中。4㈣專利中請案全文以引用 雖然已關於特殊實施你丨#行.τ 士 & 者將易捧心 以财田述了本發明’但熟習此 者將易瞭解在不偏離如 發明之精神及範嘴的條件下^;:圍 定的本 【圖式簡單說明】 出㈣變化及修改° =展示-習知推挽型輸出驅動器之示意電路圖; 圖:描:會具有―用於控制—轉換率之預驅動器之另— 推挽型輸出驅動器的示意電路圖; 圖3係說明用於藉由* 轉換率之另-習知推挽:::預驅動節點處之波形來控制 圖4係根據本發明之:輸出驅動器的示意電路圖; 輸出驅動ϋ的方塊圖.較佳實施例的展示—轉換率控制 112692.doc -20- 1310186 圖5係描繪圖4中所示之PVT變化偵測單元的方塊圖; 圖6係展不商用ρ〇·ρ(: 6〇3主從式鎖存器的 圖; 元之一操作的方 圖7係展示圖5中所示之PVT變化偵測單 塊圖; 單元的示意電路 圖8係描繪圖4中所示之選擇訊號產生 圖; 圖9係展示圖4中所示之輸出驅動單元的方塊圖;及Dnw specializes in (4) 2GG5_9G853 and 2005-133986 related to this ef, and the method is also included in this article. 4 (4) The full text of the petition in the patent is quoted. Although it has been specially implemented, you will be able to understand the present invention with the help of the financial field, but it will be easy to understand without losing the spirit of the invention. Under the condition of the mouth of the mouth ^;: the bound of this [simplified description of the figure] out (four) change and modification ° = display - the schematic circuit diagram of the conventional push-pull output driver; Figure: Description: will have "for control - conversion The schematic diagram of the push-pull output driver of the pre-driver of the rate; Figure 3 is a diagram illustrating the other-known push-pull by the * conversion rate::: the waveform at the pre-drive node to control Figure 4 is based on this Inventive: Schematic circuit diagram of the output driver; block diagram of the output driver .. Demonstration of the preferred embodiment - conversion rate control 112692.doc -20- 1310186 FIG. 5 is a block diagram depicting the PVT change detection unit shown in FIG. Figure 6 is a diagram of a commercially available ρ〇·ρ(: 6〇3 master-slave latch; Figure 7 of one of the elements is shown in Figure 5 showing the PVT change detection block diagram shown in Figure 5; Schematic diagram of the unit FIG. 8 is a diagram showing the selection signal generation diagram shown in FIG. Figure 9 is a block diagram showing the output driving unit shown in Figure 4;

圖10係展示圖4至圖9中所示之輸出驅動器之一操作的方 塊圖。 【主要元件符號說明】 20 預驅動器 100 pvt(過程、電壓及溫度)變化偵測單元 110 延遲線 120 數位化器 125 N位元暫存器 130 切換偵測單元 200 選擇訊號產生單元 210 第一驅動選擇訊號產生單元 220 第二驅動選擇訊號產生單元 230 第三驅動選擇訊號產生單元 300 輸出驅動單元 AND1 及”閘 AND2 "及"閘 112692.doc -21 - 1310186Figure 10 is a block diagram showing the operation of one of the output drivers shown in Figures 4 through 9. [Main component symbol description] 20 pre-driver 100 pvt (process, voltage and temperature) change detecting unit 110 delay line 120 digitizer 125 N-bit register 130 switching detecting unit 200 selection signal generating unit 210 first driving The selection signal generation unit 220 is the second drive selection signal generation unit 230. The third drive selection signal generation unit 300 outputs the drive unit AND1 and the "gate AND2 " and "gate 112692.doc -21 - 1310186

AND3 ”及n閘 AND4 ”及"閘 AND5 ”及”閘 AND6 ’’及1'閘 ANDn-1 ”及π閘 CL 負載電容器 DC1 延遲單元 DC2 延遲單元 DC3 延遲單元 DC4 延遲單元 DC5 延遲單元 DC6 延遲單元 DCn 延遲單元 INV1 反轉器 INV2 反轉器 INV3 反轉器 INV4 反轉器 INV5 反轉器 INV6 反轉器 INVn-1 反轉器 INVn 反轉器 L1/L2 電感 MN1 下拉η型金屬氧化物半導體(NMOS)電晶體 MP1 上拉Ρ型金屬氧化物半導體(PMOS)電晶體 112692.doc -22- 1310186 NO N1AND3 "and n gate AND4" and "gate AND5" and "gate AND6" and 1' gate ANDn-1" and π gate CL load capacitor DC1 delay unit DC2 delay unit DC3 delay unit DC4 delay unit DC5 delay unit DC6 delay Unit DCn delay unit INV1 inverter INV2 inverter INV3 inverter INV4 inverter INV5 inverter INV6 inverter INVn-1 inverter INVn inverter L1/L2 inductor MN1 pull-down η metal oxide semiconductor (NMOS) transistor MP1 pull-up type metal oxide semiconductor (PMOS) transistor 112692.doc -22- 1310186 NO N1

N2 N3 NANDI 1 NAND12 NAND13 N0R11 NOR12 NOR13 NOR1 NOR2 NOR3 P0N2 N3 NANDI 1 NAND12 NAND13 N0R11 NOR12 NOR13 NOR1 NOR2 NOR3 P0

PIPI

P2 P3 TG10 TG11 TG12 TGI 下拉NMOS電晶體/預設驅動器單元 第一輔助下拉NMOS電晶體/第一輔助驅動 器單元 第二輔助下拉NMOS電晶體 第三輔助下拉NMOS電晶體 第一”反及”閘 第二”反及’’閘 第三”反及”閘 第四”反或''閘 第五”反或’'閘 第六''反或”閘 第一 ”反或”閘 第二”反或"閘 第三”反或”閘 上拉PMOS電晶體/預設驅動器單元/預設上 拉PMOS電晶體 第一輔助上拉PMOS電晶體/第一輔助驅動 器單元 第二輔助上拉PMOS電晶體 第三輔助上拉PMOS電晶體 第十傳輸閘 第十一傳輸閘 第十二傳輸閘 第一傳輸閘 112692.doc -23 - 1310186 TG2 第二傳輸閘 TG3 第三傳輸閘 TG4 第四傳輸閘 TG5 第五傳輸閘 TG6 第六傳輸閘 TG7 第七傳輸閘 TG8 第八傳輸閘 TG9 第九傳輸閘 112692.doc - 24 ·P2 P3 TG10 TG11 TG12 TGI pull-down NMOS transistor / preset driver unit first auxiliary pull-down NMOS transistor / first auxiliary driver unit second auxiliary pull-down NMOS transistor third auxiliary pull-down NMOS transistor first "reverse" gate The second "reverse" ''gate third'' and "gate fourth" or "'gate fifth" or ''gate sixth'' or "gate first" or "gate second" or "gate third" reverse or "gate pull PMOS transistor / preset driver unit / preset pull-up PMOS transistor first auxiliary pull-up PMOS transistor / first auxiliary driver unit second auxiliary pull-up PMOS transistor The third auxiliary pull-up PMOS transistor tenth transmission gate eleventh transmission gate twelfth transmission gate first transmission gate 112692.doc -23 - 1310186 TG2 second transmission gate TG3 third transmission gate TG4 fourth transmission gate TG5 Five transmission gate TG6 Sixth transmission gate TG7 Seventh transmission gate TG8 Eightth transmission gate TG9 Ninth transmission gate 112692.doc - 24 ·

Claims (1)

13 HM®^23972號專利申請案 ”年'(月&gt;)日修正本 中文申請專利範圍替換本(97年„月) 十、申請專利範圍: 1. 一種在一半導體裝置中使用 包含: 之轉換率控制輸出驅動器,其 一PVT變化偵測單元用於仙卜根據過程、電壓及溫度 (pvt)變化而確定之一延遲線的延遲量變化,其中該延: 線接收一參考時脈; -選擇訊號產生單元,其用於產生—與一藉由該Μ 變化债測單元而偵測之㉝測訊號對應的驅動選擇訊 號;及 ° -輸出驅動單元,其用於用一與該ρντ變化對應之驅動 強度來驅動—輸出端子,其係制控制基於-輸出資料 及該驅動選擇訊號之複數個驅動單元,其中該等驅動單 元具有一不同的驅動強度。 2.如請求項1之轉換率控制輸出驅動器,其中該ρντ變化偵 測單元包括: 該延遲線,其用於接收該參考時脈,以產生一具有— 恆定相位差之多相時脈訊號; 一數位化器,其用於數位化該多相時脈訊號之一位 準;及 一切換偵測單元,其用於偵測該數位化器之一輪出之 一切換點。 3 .如請求項2之轉換率控制輸出驅動器,其中該延遲線包括 用於接收該參考時脈之串聯連接的複數個延遲單元。 4.如請求項3之轉換率控制輸出驅動器,其中該等延遲單元 H2692-971221.doc 1310186 每♦包括串聯連接之兩個靜態反轉器電路。 •=請求項2之轉換率㈣輸出驅㈣,其中該數位化器包 複數個第-反轉器’其用於接收自包括於該延遲線中 之該等延遲單元輪出的該多相時脈訊號;及 *夕位7G暫存器’其用於響應於該參考時脈而鎖存該 等第一反轉器之一輸出。 _ 6.㈣求項5之轉換率控制輸出驅動器,其中該多位元暫存 器包括複數個D型正反器,其每一者接收該等第一反轉器 之一輸出作為-資料輸人,並接收該參考時脈的一經延 遲版本作為一時脈輸入。 7·如請求項5之轉換率控制輸出驅動器,其中該切換债測單 元包括—邏輯單元,W㈣該多位元暫存器之每一輸 出位元及It每一輸出位元的一下一位元執行一邏輯&quot;互斥 或”運算》 鲁8·如請求項7之轉換率控制輸出驅動器,其中該切換偵測單 元包括: 複數個第二反轉器,其用於將該多位元暫存器之每一 輸出位元反轉;及 複數個,,及”閘,其每一者用於自該等第二反轉器接收該 每一輸出位元的一經反轉版本及該每一輸出位元之該下 一位元’以產生該偵測訊號。 9.如請求項1之轉換率控制輸出驅動器,其中該選擇訊號產 生單元包括一第一至一第三驅動選擇訊號產生單元,其 112692-971221.doc 1310186 用於響應於該偵測訊號之部分位元,而分別產生一第一 至一第三上拉及下拉驅動選擇訊號。 10.如請求項9之轉換率控制輸出驅動器,其中該第一驅動選 擇訊號產生單元包括: 一&quot;反或&quot;閘,其用於接收該偵測訊號之部分位元; 一第一傳輸閘,其用於響應於該”反或”閘之一輸出訊號 及該&quot;反或&quot;閘的一經反轉之輸出訊號,而選擇性地輸出一 接地電壓的一經反轉版本作為該第一上拉驅動選擇訊 號; 一第二傳輸閘’其用於響應於該”反或&quot;閘之該輪出訊號 及s亥經反轉之輸出,而選擇性地輸出該接地電壓作為該 第一下拉驅動選擇訊號; 一第三傳輸閘,其用於響應於該&quot;反或&quot;閘之該輸出訊號 及該經反轉之輸出訊號,而選擇性地輸出一電源電壓的 一經反轉版本作為該第一上拉驅動選擇訊號;及13 HM®^23972 Patent Application “Year” (Month&gt;) Day Revision This Chinese Patent Application Range Replacement (97 „月) X. Patent Application Range: 1. A use in a semiconductor device includes: The conversion rate control output driver, wherein a PVT change detecting unit is configured to determine a delay amount change of one of the delay lines according to a process, a voltage, and a temperature (pvt) change, wherein the delay: the line receives a reference clock; a selection signal generating unit for generating a driving selection signal corresponding to a 33 measuring signal detected by the Μ change debt measuring unit; and a −− output driving unit for using a corresponding change to the ρντ The driving strength drives the output terminal, which controls a plurality of driving units based on the output data and the driving selection signal, wherein the driving units have a different driving strength. 2. The conversion rate control output driver of claim 1, wherein the ρντ change detecting unit comprises: the delay line for receiving the reference clock to generate a multi-phase clock signal having a constant phase difference; a digitizer for digitizing one of the multiphase clock signals; and a switching detection unit for detecting one of the digitizers to rotate one of the switching points. 3. The conversion rate control output driver of claim 2, wherein the delay line comprises a plurality of delay units for receiving the series connection of the reference clock. 4. The conversion rate control output driver of claim 3, wherein the delay units H2692-971221.doc 1310186 each include two static inverter circuits connected in series. • = conversion rate of request item 2 (4) output drive (4), wherein the digitizer includes a plurality of first-inverters for receiving the multi-phase from the delay units included in the delay line a pulse signal; and a *7 7 register register for latching the output of one of the first inverters in response to the reference clock. _ 6. (4) The conversion rate control output driver of claim 5, wherein the multi-bit register includes a plurality of D-type flip-flops, each of which receives one of the outputs of the first inverters as a data input Person, and receives a delayed version of the reference clock as a clock input. 7. The conversion rate control output driver of claim 5, wherein the switching debt measurement unit comprises - a logic unit, W (4) each output bit of the multi-bit register and the next bit of each output bit of It Executing a logic &quot;mutual exclusion or "operation" Lu 8 · The conversion rate control output driver of claim 7, wherein the switching detection unit comprises: a plurality of second inverters for temporarily suspending the multi-bit Each output bit of the memory is inverted; and a plurality of, and "gates," each of which is configured to receive an inverted version of each of the output bits from the second inverter and each of the The next bit of the bit is output to generate the detection signal. 9. The conversion rate control output driver of claim 1, wherein the selection signal generating unit comprises a first to a third driving selection signal generating unit, 112692-971221.doc 1310186 for responding to the detecting signal portion Bits, respectively, generate a first to third third pull-up and pull-down drive selection signals. 10. The conversion rate control output driver of claim 9, wherein the first drive selection signal generating unit comprises: a &quot;reverse&quot; gate for receiving a portion of the bit of the detection signal; a first transmission a gate for selectively outputting an inverted version of the ground voltage as the first in response to the output signal of the "reverse" gate and the inverted output signal of the &quot;reverse&quot; a pull-up drive selection signal; a second transfer gate </ RTI> for selectively outputting the ground voltage as the responsive to the output of the "reverse or &quot; gate and the inverted output a pull-down drive selection signal; a third transfer gate for selectively outputting a power supply voltage in response to the output signal of the &quot;reverse&quot; gate and the inverted output signal The version is used as the first pull-up drive selection signal; and 一第四傳輸閘,其用於響應於該,,反或”閘之該輪出訊號 及u、’二反轉之輪出訊號,而選擇性地輸出該電源電壓作 為該第一下拉驅動選擇訊號。 如凊求項9之轉換率控制輸出驅動器,其中該輸出驅 元包括: 一預設驅動器罝;β . , 单70,其具有一上拉PMOS電晶體及一 拉:MOS電曰曰體’該等電晶體之閘極接收該輸出資料; 複數個辅助驅動器單元,其每一者具有_輔助上 PM〇S電晶體及—輔助下拉NMOS電晶體’其中每一輔 112692-971221.doc 1310186 上拉PMOS電晶體及每一輔助下拉NMOS電晶體具有一不 同尺寸; 一辅助上拉控制單元,其用於響應於該輸出資料及該 第一至該第三上拉驅動選擇訊號而產生一辅助上拉控制 訊號’以選擇性地開啟該輔助上拉PMOS電晶體; 一辅助下拉控制單元,其用於響應於該輸出資料及該 苐至該第一下拉驅動選擇訊號而產生一輔助下拉控制 訊號’以選擇性地開啟該輔助下拉NM〇s電晶體;及 複數個延遲,其用於將該辅助上拉及該下拉控制訊號 延遲-預定時間,且用於將㈣經延遲之訊號輸入至該 等輔助驅動器單元之每一者。 12.如請求項丨丨之轉換率控制輸出驅動器,其中該輔助上拉控 制單元包括: 一第一&quot;反及”閘,其用於接收該輸出資料之一經反轉版 本及該第一上拉驅動選擇訊號; -第二’’反及”問,其用於接收該輸出資料之該經反轉版 本及該第二上拉驅動選擇訊號;及 -第二&quot;反及1 ’其用於接收該輪出資料之該經反轉版 本及該第三上拉驅動選擇訊號。 如請求項12之轉換率控制輸出驅動器,其中該輔助下拉控 制單元包括: 一第一&quot;反或&quot;閘,其用於接收該鉍山次丨丨 设邊輸出資料之該經反轉版 本及該第一下拉驅動選擇訊號; 一第二”反或”閉,其用於接收該輪出資料之該經反轉版 112692-971221.doc 1310186 本及該第二下拉驅動選擇訊號;及 一第二’’反或”閘,其用於接收該輪出資料之該經反轉版 本及該第三下拉驅動選擇訊號。 14. 一種用於驅動一半導體裝置之一輪出的方法,其包含以下 步驟: a)4貞測一延遲線根據過程、電壓及溫度(ρντ)變化的一 - 延遲量變化’該延遲線接收一參考時脈; - b)產生一與該步驟a)之偵測結果對應的驅動選擇訊 φ 號;及 C)藉由一輸出資料及該驅動選擇訊號而控制複數個驅 動器單元,藉此用一與該PVT變化對應之驅動強度來驅動 —輪出端子’其中該等驅動器單元具有一不同驅動強度。 15. 如請求項14之方法,其中該步驟a)包括以下步驟: d) 藉由在該延遲線處將該參考時脈延遲一預定時間,來 產生一具有一恆定相位差之多相時脈訊號; e) 數位化該多相時脈訊號之一位準;及 ® f)偵測一該經數位化之訊號已變化的切換點。 112692-971221.doc D1 (Μ ®β123972號專利申請案 中文圖式替換頁(97年11月) 年Η月”曰修正替換頁a fourth transmission gate for selectively outputting the power supply voltage as the first pull-down driving in response to the reverse signal of the gate and the rounding signal of the u and the two inversions Selecting a signal. The conversion rate control output driver of claim 9, wherein the output driver includes: a predetermined driver 罝; β., a single 70 having a pull-up PMOS transistor and a pull: MOS device The gates of the transistors receive the output data; a plurality of auxiliary driver units each having an _ auxiliary upper PM〇S transistor and an auxiliary pull-down NMOS transistor each of which is 112692-971221.doc The 1310186 pull-up PMOS transistor and each auxiliary pull-down NMOS transistor have a different size; an auxiliary pull-up control unit is configured to generate a response in response to the output data and the first to third pull-up drive selection signals Auxiliary pull-up control signal 'to selectively turn on the auxiliary pull-up PMOS transistor; an auxiliary pull-down control unit for generating an auxiliary in response to the output data and the 苐 to the first pull-down drive selection signal Pulling the control signal 'to selectively turn on the auxiliary pull-down NM〇s transistor; and a plurality of delays for delaying the auxiliary pull-up and the pull-down control signal by a predetermined time and for using the (4) delayed signal Input to each of the auxiliary drive units 12. Controlling the output drive as required by the conversion rate, wherein the auxiliary pull-up control unit comprises: a first &quot;reverse&quot; gate for receiving the One of the output data is inverted version and the first pull-up drive selection signal; - a second ''reverse'" request for receiving the inverted version of the output data and the second pull-up drive selection signal; And - second &quot;reverse 1' for receiving the inverted version of the rounded data and the third pull-up drive selection signal. The conversion rate control output driver of claim 12, wherein the auxiliary pull-down control The unit includes: a first &quot;reverse&&quot; gate for receiving the inverted version of the output data of the mountain and the first pull-down drive selection signal; a second "reverse" "closed, its Receiving the inverted version 112692-971221.doc 1310186 and the second pull-down drive selection signal; and a second ''reverse' gate for receiving the rounded data) Reverse the version and the third pull-down drive selection signal. 14. A method for driving a turn-off of a semiconductor device, comprising the steps of: a) measuring a delay line according to a change in process, voltage and temperature (ρντ), the delay line receiving a delay line Referring to the clock; - b) generating a drive selection signal φ corresponding to the detection result of the step a); and C) controlling the plurality of driver units by an output data and the drive selection signal, thereby using one The driving strength corresponding to the PVT variation drives - the wheel terminal 'where the driver units have a different driving strength. 15. The method of claim 14, wherein the step a) comprises the step of: d) generating a polyphase clock having a constant phase difference by delaying the reference clock at the delay line for a predetermined time. a signal; e) digitizing one of the multiphase clock signals; and &lt; f) detecting a switching point at which the digitized signal has changed. 112692-971221.doc D1 (Μ β ® β 123 972 Patent Application Chinese Graphic Replacement Page (November 1997) Year Η 曰 曰 Correction Replacement Page 圖9 Ο :\ 112\ 112692-fig-971221 .docFigure 9 Ο :\ 112\ 112692-fig-971221 .doc
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US8587340B2 (en) 2012-03-27 2013-11-19 Micron Technology, Inc. Apparatuses including scalable drivers and methods
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