1309863 九、發明說明： 【發明所屬之技術領域】 本發明係有關—種半導體封裝製程，更特別有關切割晶 圓的方法’本發明還有關一種半導體封裝構造。 【先前技術】 習知的半導體封裝製程中，係先將晶圓切割成一顆顆的 曰曰粒（d i e)’再將這些晶粒做成各具功能的半導體封裝結 鲁構明參考第1 a與1 b圖，其顯示習知切割晶圓的方法。 首先，將研磨（grinding)及拋光（p〇lishing)後的晶圓11〇 的背面貼附一層薄膜黏著劑（die attach film)14〇後’再 黏貼於一切割膠帶（dicing ΐ&ρ6)12〇上（見第la圖），並 烘烤使薄膜黏著劑14 〇硬化。接著，將該切割膠帶丨2 〇固 定於一晶圓架（圖未示），再將該晶圓架固接於一分割機 器，以切刀130切割晶圓11 〇 (見第lb圖）。切割完畢後 所得到的晶粒附著在切割膠帶丨2〇上，要進行下一道製程 φ 時再行取下。 然而，為了方便晶粒由切割膠帶i2〇上取下，烘烤時溫 度通常不會超過薄膜黏著劑14〇的硬化溫度（curing temperature)，亦即薄膜黏著劑14〇僅達到B — stage (半 聚合狀態），並未完全硬化。於此情況下，晶圓丨丨〇並未與 切割膠帶1 20完全接合，造成切割晶圓J丨〇時發生晶粒背 面崩裂（backside chipping)的問題。 有鑑於此，便有須提出一種切割晶圓的方法，以解決晶 粒背崩的問題。 01152-TW/ASE 1734 5 1309863 【發明内容】 本發明之目的在於提供一種切割晶圓的 粒背崩的問題。 的方去，以解決晶BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor package process, and more particularly to a method of cutting a wafer. The present invention also relates to a semiconductor package structure. [Prior Art] In the conventional semiconductor packaging process, the wafer is first diced into individual dies, and then these dies are made into functional semiconductor packages. And Figure 1b, which shows a conventional method of cutting a wafer. First, a film adhesive is attached to the back surface of the wafer 11 after grinding and polishing, and then adhered to a dicing tape (dicing ΐ & ρ6) 12 The crucible (see Figure la) is baked and the film adhesive 14 is hardened. Next, the dicing tape 丨2 〇 is fixed to a wafer holder (not shown), and the wafer holder is fixed to a dividing machine, and the wafer is cut by the cutter 130 (see Figure lb). After the cutting is completed, the obtained crystal grains are attached to the dicing tape 丨2〇, and are removed after the next process φ is performed. However, in order to facilitate the removal of the die from the dicing tape i2, the temperature during baking generally does not exceed the curing temperature of the film adhesive 14 ,, that is, the film adhesive 14 〇 only reaches the B-stage (half Polymerized state), not completely hardened. In this case, the wafer defect is not completely bonded to the dicing tape 120, causing a problem of backside chipping when the wafer J is diced. In view of this, there is a need to propose a method of cutting a wafer to solve the problem of crystal back collapse. 01152-TW/ASE 1734 5 1309863 SUMMARY OF THE INVENTION An object of the present invention is to provide a problem of grain back collapse of a diced wafer. The party goes to solve the crystal
為達上述目的，本發明之切割晶圓的方法係於晶圓的背 —依序貼附一第一薄膜黏著劑與一第二薄膜黏著劑， 第二薄膜黏著劑的硬化溫度高於第—薄膜黏著’p 度。將一切割膠帶黏貼於第二薄膜黏著劑上，並。 行烘烤’以使第一薄膜黏著劑硬化而第二薄膜黏著； 全硬化。切割烘烤後的晶圓可得到不具有背崩的晶粒。凡 本發明之另一 目&在於提供一種半導體封裳構造，其包 & -基板’其上承載有貼附第一薄膜黏著 黏著劑之晶粒。 、弟一溥膜 和優點能更明 示’作詳細說 為了讓本發明之上述和其他目的、特徵、 颁下文特舉本發明實施例，並配合所附圖 明如下。 【實施方式】 声/ ^考第2a圖，—晶圓210在研磨及拋光至所需的厚 度後：藉由貼附於其背面的-第-薄膜黏著劑230與一第 -薄膜黏著劑240 ’黏貼於一切割膠冑22〇上， 一薄膜黏著劑230呈右糾&以 、〜弟 /、歧低的硬化溫度，例如低於約攝氏 又’ §亥第二薄膜黏著劑2 4 0且：έ· '•古M _ 可w Z4U具有較尚的硬化溫度，例如In order to achieve the above object, the method for cutting a wafer of the present invention is to attach a first film adhesive and a second film adhesive to the back of the wafer, and the curing temperature of the second film adhesive is higher than that of the first film. The film adheres to 'p degrees. A dicing tape is adhered to the second film adhesive. Row baking 'to harden the first film adhesive and the second film to adhere; fully hardened. After cutting the baked wafer, crystal grains having no back collapse can be obtained. Another object of the present invention is to provide a semiconductor package structure in which a package & substrate is loaded with a die to which a first film adhesive is attached. The above and other objects, features, and embodiments of the present invention are set forth in the accompanying drawings. [Embodiment] Sound / ^ 2a, after the wafer 210 is ground and polished to a desired thickness: by the - film adhesive 230 attached to the back side and a film adhesive 240 'Adhesively applied to a dicing tape 22 ,, a film adhesive 230 is a right-curing & tempering temperature, for example, less than about Celsius and then § 第二 second film adhesive 2 4 0 and :έ· '•古 M _ w w Z4U has a harder curing temperature, for example
尚於約攝氏1 7 〇彦。技装L 接者對上述黏貼於切割膠帶220上的 晶圓21 0進行烘姥，龢往α , '、 較佳的烘烤溫度係介於該第一薄膜黏 著背j 2 3 0的硬化溫度盘兮笛_鴒时办〇 士丨〇 μ ” β第—溥膜黏者劑240的硬化溫度 01152-TW/ASE 1734 6 .1309863 之間’以使得直接貼附於該晶圓2i〇的第-薄膜黏著劑230 完全硬化，而該第二薄膜黏著劑240則未完全硬化。Still about 1 7 摄 Yan. The fixture L is used to dry the wafer 21 0 adhered to the dicing tape 220, and the preferred baking temperature is between the curing temperature of the first film adhesion back j 2 3 0 .兮 兮 鸰 〇 〇 〇 〇 ” ” β β 第 β β β 溥 溥 β β β β β β β β β β β β 240 240 240 01 01 01 01 01 01 01 01 01 01 01 01 01 01 01 01 01 01 01 01 01 01 The film adhesive 230 is completely hardened while the second film adhesive 240 is not completely cured.
月多考第2b圖，切割烘烤後的晶圓210，以得到所要 的晶粒。由於該第—薄膜黏著劑230經烘烤後係完全硬 化，因此能與該晶目21〇緊密結合，在切割後不會發生晶 粒背崩的問題，且切割後的晶粒可直接進行晶粒上板的製 程。此外，由於該第二薄膜黏著齊丨24〇未完全硬化，切割 後的晶粒很容易與該第二薄膜黏著劑24〇分開。 六螬不很像 .....τ〜丨.姐3T瑕稱造 3〇〇 ’包含有以本發明之切割晶圓方法所得到的晶粒本體 3工〇。該晶粒本體31G的背面貼附有—第—薄膜黏著劑 23〇…苐-溥膜黏著劑24Q則貼附於該第—薄膜黏著劑 230上。一基板350則用以承載該晶粒本體31〇、第一 黏著劑234及第二薄膜黏著劑24〇。 、 雖然耵述的描述及圖示已揭示本發明之較佳實施例，必 須瞭解到各種增添、修改和取代可能制於本發明較佳命 施例：而不會脫離如所附申請專利範圍所界定的本發心 理之精神及乾圍。熟悉該技藝者將可體會本發明可能使用 :很多形式、結構、佈置、比例、材料、元件和組件的修 e 。因广’本文於此所揭示的實施例於所有觀點，應被 為用以說明本發明，而非用以的 L + w 73 本發明的範 應由後时請專利範圍所界定，並涵蓋其合 不限於先前的描述。 to 亚 01152-TW/ASE 1734 7 1309863 【圖式簡單說明】 第1 a及1 b圖：為習知切割晶圓方法之示意圖。 第2a及2b圖：為本發明一實施例之切割晶圓方法之示 意圖。 第3圖：為本發明一實施例之半導體封裝構造之示意 圖。 【圖號說明】 110 晶圓 120 切割膠帶 130 切刀 140 薄膜黏著劑 210 晶圓 220 切割膠帶 230 薄膜黏著劑 240 薄膜黏著劑 300 半導體封裝構造 310 晶粒本體 350 基板In the second test of Figure 2b, the baked wafer 210 is cut to obtain the desired crystal grains. Since the first film adhesive 230 is completely hardened after baking, it can be tightly bonded to the crystal lens 21, and there is no problem of grain back collapse after cutting, and the crystal grains after cutting can be directly crystallized. The process of granules on the board. Further, since the second film is not completely cured, the cut crystal grains are easily separated from the second film adhesive 24. Six is not very similar to ..... τ~丨. Sister 3T nickname 3 〇〇 ‘includes the grain body 3 work obtained by the dicing wafer method of the present invention. The back surface of the die body 31G is attached with a first film adhesive 23, and the film adhesive 24Q is attached to the first film adhesive 230. A substrate 350 is used to carry the die body 31, the first adhesive 234 and the second film adhesive 24A. While the invention has been described with respect to the preferred embodiments of the present invention, it is to be understood that Define the spirit and dryness of the mentality of the present. Those skilled in the art will recognize that the invention may be utilized in many forms, structures, arrangements, ratios, materials, components, and components. The present invention disclosed herein is intended to be illustrative of the invention, and is not intended to be used in the context of the invention as defined by the scope of the invention. It is not limited to the previous description. To Asia 01152-TW/ASE 1734 7 1309863 [Simple description of the drawings] Figures 1 a and 1 b: A schematic diagram of a conventional method of cutting wafers. 2a and 2b are views showing a method of dicing a wafer according to an embodiment of the present invention. Fig. 3 is a schematic view showing a structure of a semiconductor package according to an embodiment of the present invention. [Description of the number] 110 Wafer 120 Cutting tape 130 Cutter 140 Film adhesive 210 Wafer 220 Cutting tape 230 Film adhesive 240 Film adhesive 300 Semiconductor package structure 310 Grain body 350 substrate
01152-TW/ASE 1734 801152-TW/ASE 1734 8