13090571309057
九、發明說明：I 【發明所屬之技術領域】 本發明是有關於一種矽量子點白光螢光燈及其製 備方法，尤指利用間隙放電方式激發具矽量子點螢光 層之基板產生白光之矽量子點白光螢光燈。 【先前技術】 按，中華民國專利公報公告第1250664號之「白 光發光二極體」，此專利内容係為一種白光發光二極 體，至少包括：一激發光源，係發出一光線，且該光 線之波長介於440nm至490nm之間；以及一螢光粉， 配置於該激發光源周圍，並適於接收該激發光源所發 出之該光線，且該營光粉包括一黃光營光粉以及一紅 光螢光粉，其中，該黃光螢光粉為（Mel-x-yEuxRey)3 Si05 :且該紅光螢光粉係選自 Y203 : Eu3+,Y203 : Bi3+、（Y,Gd)203 ·· Eu3+、（Y,Gd)203 : Bi3+、Y202S : Bi3+、（Mel-xEux)ReS 及 Mg3Si04 : Μη 所組成之族群 其中之一。 又如中華民國專利公報公告第1244772號之「白 光發光裝置與製作方法」，此專利内容係為一種白光發 光裝置，包含：一可發出紫外光之發光二極體；一第 一螢光粉體，係受該發光二極體所發出之紫外光激 發，而產生主波長範圍為470nm至500nm之一藍綠色 1309057 螢光’其化學’武為（Bal-x-yEuxSry)MgAllOOl7，其中 〇<XS卜0SYS1 ;及一第二螢光粉體，係受該發光 二極體所發出之紫外光激發，而產生主波長範圍為 570nm至600nm之一橘色螢光，其化學式為（CaEu，IX. INSTRUCTIONS: I [Technical Field] The present invention relates to a bismuth quantum dot white fluorescent lamp and a preparation method thereof, and more particularly to stimulating a substrate having a quantum dot fluorescent layer by a gap discharge method to generate white light.矽 Quantum dot white light fluorescent lamp. [Prior Art] According to the "White Light Emitting Diode" of the Republic of China Patent Gazette No. 1250664, the patent is a white light emitting diode comprising at least one excitation light source emitting a light and the light The wavelength is between 440 nm and 490 nm; and a phosphor is disposed around the excitation light source and is adapted to receive the light emitted by the excitation light source, and the camp powder comprises a yellow light camp powder and a red light a phosphor powder, wherein the yellow phosphor is (Mel-x-yEuxRey) 3 Si05 : and the red phosphor is selected from the group consisting of Y203 : Eu3+, Y203 : Bi3+, (Y, Gd) 203 · Eu3+, Y, Gd) 203 : one of the groups consisting of Bi3+, Y202S: Bi3+, (Mel-xEux) ReS and Mg3Si04: Μη. Another example is a white light emitting device and a manufacturing method thereof, which is a white light emitting device comprising: a light emitting diode capable of emitting ultraviolet light; and a first fluorescent powder body. Excited by the ultraviolet light emitted by the light-emitting diode, the main wavelength range is 470nm to 500nm, one blue-green 1309057, the fluorescent 'its chemical' is (Bal-x-yEuxSry) MgAllOOl7, where 〇< XS Bu 0SYS1; and a second phosphor powder are excited by the ultraviolet light emitted by the light emitting diode to generate orange fluorescence having a dominant wavelength range of 570 nm to 600 nm, and the chemical formula is (CaEu,
Mn)(P〇4)3Cl;其中該藍綠色螢光可*該橘色螢光混合 成白光。 又如中華民國專利公報公告第1234294號之「白 光發光裝置」，此專利内容係為一種白光發光裝置，包 含.一可發出藍光或藍綠光之發光二極體；一第一螢 光體’其化學式為（YxMyCez)Al5〇12，其中x+y=3， 且X、y邦，0.5>z>0 ’ M係選自铽（Tb)、餾（Lu)及镱（Yb) 等金屬元素所組成之群組，其中（YxMy)Al5〇12為其 主體結構，Ce為發光中心，該第一榮光體受該發光二 極體所發出之光激發，而產生主波長範圍為52〇至58〇 nm之黃色螢光；及一第二螢光體，其可受該發光二極 體所發出之光激發，而產生主波長範圍為58〇至64〇 nm之紅色螢光，其中，該發光二極體所發出之光可與 該頁色螢光及該紅色螢光混合而產生白光。 雖上述之習用技術，以光激發螢光粉產生白光光 源，但光電之轉換效率低，必須使用較高功率之激發 光源，或使用較厚之螢光層，故，該習用者係無法符 合使用者於實際使用時之所需。 1309057 【發明内容】 本發明之主要目& 晋目的係在於，利用間隙放電方 =夺1電子與紫外光源’激發具石夕量子點螢光層之 土 ，進而產生白光光源，並增進光電之轉換效率。 為達上述之目的，本發明係為一種間隙放電矽 子點白光螢光燈及其製備方法，本發明之％量子點白 光螢光燈係至少由—間隙放電結構及—高壓迴路所構 成0Mn)(P〇4)3Cl; wherein the blue-green fluorescent light* can be mixed into white light. Another example is the "white light emitting device" of the Republic of China Patent Gazette No. 1234294, which is a white light emitting device comprising: a light emitting diode capable of emitting blue or blue-green light; a first phosphor ' Its chemical formula is (YxMyCez)Al5〇12, where x+y=3, and X, y state, 0.5>z>0 'M is selected from metals such as Tb, Lu and Yb. a group consisting of elements, wherein (YxMy)Al5〇12 is its main structure, Ce is an illuminating center, and the first glory is excited by the light emitted by the illuminating diode, and the main wavelength range is 52 〇 to a yellow phosphor of 58 〇 nm; and a second phosphor that is excited by the light emitted by the light emitting diode to generate red fluorescent light having a dominant wavelength range of 58 〇 to 64 〇 nm, wherein The light emitted by the light emitting diode can be mixed with the page color fluorescent light and the red fluorescent light to generate white light. Although the above-mentioned conventional technology uses a light-excited fluorescent powder to generate a white light source, the photoelectric conversion efficiency is low, and a higher power excitation light source or a thicker fluorescent layer must be used, so the user cannot use it. Required in actual use. 1309057 [Summary of the Invention] The main objective of the present invention is to use a gap discharge side = 1 electron and an ultraviolet light source to ignite the soil of the Shi Xi quantum dot fluorescent layer, thereby generating a white light source and enhancing the photoelectricity. Conversion efficiency. In order to achieve the above object, the present invention is a gap discharge 点 sub-point white light fluorescent lamp and a preparation method thereof, and the % quantum dot white fluorescent lamp of the present invention is composed of at least a gap discharge structure and a high voltage circuit.
其中’該間隙放電結構係由具石夕量子點螢光層之 基板構成六面體，並選擇二相對應面之具矽量子^螢 光層之基板分別為間隙放電電極之陽極及陰極；或者 該間隙放電結構係可由—具梦量子點螢光層之基板與 一金屬板所構成，並分別為間隙放電電極之陽極及陰 極。 該高壓迴路係包括一高壓源，該高壓源之陽極端 及陰極端係分別連接間隙放電結構之間隙放電電極之 1¾極及陰極。 【實施方式】 請參閱『第1圖』所示，係本發明之第—實施例 使用狀態示意圖。如圖所示：本發明係為一種間隙放 電石夕量子點白光螢光燈及其製備方法，該間隙放電矽 虿子點白光螢光燈1係至少由一間隙放電結構1 1及一 7 1309057 高壓迴路12所>冓成。 該間隙放電結構Π係為一六面體，各面係 石夕量子點螢光声ι 马具 具矽量子點119 ’並選擇二相對應面之 .，螢先層U2之基板ill為間隙放電電極夕 理中’該矽量子點螢光層112係利用物 無==Γ:·徑1⑽至―間之密點嵌於 機慈忠U、..珥如·一氧化矽、氮化矽或碳化矽）或有Wherein the gap discharge structure is formed by a substrate having a phosphor layer of a Shixi quantum dot to form a hexahedron, and the substrate having the corresponding quantum light-emitting layer of the second corresponding surface is respectively an anode and a cathode of the gap discharge electrode; or The gap discharge structure can be composed of a substrate having a dream quantum dot fluorescent layer and a metal plate, and is an anode and a cathode of the gap discharge electrode, respectively. The high voltage circuit includes a high voltage source, and the anode end and the cathode end of the high voltage source are respectively connected to the 13⁄4 pole and the cathode of the gap discharge electrode of the gap discharge structure. [Embodiment] Please refer to Fig. 1 for a schematic view of the state of use of the first embodiment of the present invention. As shown in the figure: the present invention is a gap discharge stone quantum dot white light fluorescent lamp and a preparation method thereof, the gap discharge dice point white light fluorescent lamp 1 is at least a gap discharge structure 1 1 and a 7 1309057 The high pressure circuit 12 is > The gap discharge structure is a hexahedron, and each surface is a stone-like quantum dot fluorescent sound ι horse with a quantum dot 119 'and a corresponding two surface. The substrate ill of the first layer U2 of the firefly is a gap discharge. In the electrode, the quantum dot fluorescent layer 112 is used for the absence of the object ==Γ: · the diameter of the hole (1) to the inter-portion is embedded in the machine Cizhong U, .. such as · nitric oxide, tantalum nitride or Carbide)
用化心Γ所形成’而且财量子點螢光層112係利 用化予軋相沉積或印刷版術法覆蓋於基板U1上， =具石夕量子點螢光|112之基板U1, 係可為透光率達90%以上之材料或玻璃。 該高磨迴路12係至少包括一高壓源m，該高壓 源⑵之陽極端1211及陰極端1212係分別連接至該 間隙$電結構11之間隙放電電極。The formation of the Γ Γ 而且 而且 而且 而且 而且 财 财 财 财 财 财 财 财 财 财 财 财 财 财 财 财 财 财 财 财 财 财 财 财 财 财 财 财 财 财 财 财 财 财 财 萤 萤 萤 萤 萤 萤 萤 萤A material or glass with a light transmittance of over 90%. The high-friction circuit 12 includes at least one high-voltage source m, and the anode end 1211 and the cathode end 1212 of the high-voltage source (2) are respectively connected to the gap discharge electrodes of the gap $ electrical structure 11.
當高壓迴路12通入電流時，高壓源！21升壓至某 一南壓值時，間隙氣體建立之絕緣崩潰，游離電子穿 隧該間隙間之氣體’並且激發該間隙間之氣體，而產 生電子與紫外光源2，進而激發具發量子點營光層ιΐ2 之基板111產生白光光源3。 請參閱『第2圖』所示，係本發明之第二實施例 使用狀態示意圖，所示：本發明係為一種間隙放 ，石夕量子點白光螢光燈及其製備方法，該㈣放電石夕 量子點白光螢光燈la係至少由一間隙放電結構Ua及 1309057 一高壓迴路12a'所構成。 - 該間隙放電結構11 a係由一具石夕量子點螢光層 112a之基板111a及一金屬板U3a(或金屬線）構成，並 分別為間隙放電電極之陽極及陰極，其中，該石夕量子 點螢光層112a係利用物理或化學方法將粒徑lnm至 10nm間之矽量子點嵌於無機螢光材料（如：二氧化 矽、氮化矽或碳化矽）或有機螢光材料所形成，而且該 矽量子點螢光層112a係利用化學氣相沉積或印刷版 術法覆蓋於基板111a上，形成具矽量子點螢光層U2a 之基板111a，亦可於基板ula與矽量子點螢光層112& 間塗佈一氧化銦錫層114a，而該基板1Ua係可為透光 率達90%以上之材料或玻璃。 該高壓迴路12a係至少包括一高壓源ma，該高 壓源121a之陽極端1211a及陰極端1212a係分別連接 至該間隙放電結構11a之間隙放電電極，該陽極端 1211a係連接於間隙放電電極中為陽極之具矽量子點 螢光層IHa之基板llla，該陰極端m2a係連接於間 隙放電電極中為陰極之金屬板113a。 於高壓迴路12a通入電流，該高壓源121a升壓至 某-高壓值時，間隙氣體建立之絕緣崩潰，游離電子 穿随該間隙間之氣體，並且激發該間隙間之氣體，而 產生電子與紫外光源2a，進而激發具石夕量子點營光層 112a之基板llla產生白光光源％。 曰 1309057 练上所述，本發明間隙放電矽量子點白光螢光燈 及八裝備方法可有效改善習用之種種缺點，利用間隙 放，方法可同時產生電子與紫外光源，用來激發具 夕量子點螢光層之基板，進而產生白光光源，並增進 :電之轉換效率’又因使用矽為材料，使成本低廉， 發明之産生能更進步、更實用、更符合使用 請確已符合發明專利申請之要件，爰依法提 本不ϋ以t所述者’僅為本發明之較佳實施例而已， 發明實施之範圍；☆，凡依本發明 明說明書内容所作之簡單的等效變 化與修飾，皆應仍屬本發明專利涵 1309057 【圖式簡單說明】，、 第1圖，係本發明之第一實施例使用狀態示意圖。 第2圖，係本發明之第二實施例使用狀態示意圖。 【主要元件符號說明】 矽量子點白光螢光燈1、la 間隙放電結構11、lla 基板 111、111a 鲁 矽量子點螢光層112、112a 金屬板113a 氧化銦錫層114a ' 高壓迴路12、12a 高壓源12卜121a 陽極端 1211、1211a 陰極端 1212、1212a • 電子與紫外光源2、2a 白光光源3、3aWhen the high voltage circuit 12 is energized, the high voltage source! When 21 is boosted to a certain south pressure value, the insulation established by the gap gas collapses, the free electrons tunnel through the gas between the gaps' and excite the gas between the gaps to generate electrons and ultraviolet light source 2, thereby exciting the quantum dots. The substrate 111 of the camping layer ι 2 produces a white light source 3. Please refer to FIG. 2, which is a schematic view showing the state of use of the second embodiment of the present invention. The present invention is a gap discharge, Shixi quantum dot white light fluorescent lamp and a preparation method thereof, and the (four) discharge stone The illuminating point white light fluorescent lamp la is composed of at least one gap discharge structure Ua and 1309057, a high voltage circuit 12a'. - the gap discharge structure 11a is composed of a substrate 111a of a luminescent quantum dot fluorescent layer 112a and a metal plate U3a (or metal wire), and is an anode and a cathode of the gap discharge electrode, respectively. The quantum dot fluorescent layer 112a is formed by physically or chemically embedding a germanium quantum dot having a particle diameter of 1 nm to 10 nm in an inorganic fluorescent material (such as ceria, tantalum nitride or tantalum carbide) or an organic fluorescent material. And the germanium quantum dot fluorescent layer 112a is coated on the substrate 111a by chemical vapor deposition or printing to form a substrate 111a having a quantum dot fluorescent layer U2a, and may also be used on the substrate ula and the germanium quantum dot The indium tin oxide layer 114a is coated between the light layers 112 & and the substrate 1Ua is a material or glass having a light transmittance of 90% or more. The high voltage circuit 12a includes at least one high voltage source ma, and the anode end 1211a and the cathode end 1212a of the high voltage source 121a are respectively connected to the gap discharge electrode of the gap discharge structure 11a, and the anode end 1211a is connected to the gap discharge electrode. The anode has a substrate 111a of a quantum dot fluorescent layer IHa, and the cathode end m2a is connected to a metal plate 113a which is a cathode in the gap discharge electrode. When a current is applied to the high voltage circuit 12a, and the high voltage source 121a is boosted to a certain high voltage value, the insulation established by the gap gas collapses, the free electrons pass through the gas between the gaps, and the gas between the gaps is excited to generate electrons. The ultraviolet light source 2a, in turn, excites the substrate 111a having the Shixi quantum dot camping layer 112a to generate a white light source%.曰1309057 In the above, the gap discharge 矽 quantum dot white light fluorescent lamp and the eight-equipment method of the invention can effectively improve various disadvantages of the conventional use, and the gap can be used to simultaneously generate electron and ultraviolet light sources for exciting the quantum dots. The substrate of the phosphor layer, which in turn produces a white light source, and enhances: the conversion efficiency of electricity is further reduced in cost due to the use of tantalum, and the invention can be more advanced, more practical, and more suitable for use. The requirements of the present invention are not limited to the preferred embodiments of the present invention, and the scope of the invention is implemented; ☆, the simple equivalent changes and modifications made in accordance with the contents of the present specification, All of them should still belong to the patent of the present invention 1309057 [Simplified description of the drawings], and Fig. 1 is a schematic view showing the state of use of the first embodiment of the present invention. Fig. 2 is a schematic view showing the state of use of the second embodiment of the present invention. [Description of main component symbols] 矽 quantum dot white fluorescent lamp 1, la gap discharge structure 11, 11a substrate 111, 111a reckless quantum dot fluorescent layer 112, 112a metal plate 113a indium tin oxide layer 114a 'high voltage circuit 12, 12a High voltage source 12 123a anode end 1211, 1211a cathode end 1212, 1212a • electron and ultraviolet light source 2, 2a white light source 3, 3a