1 1307523 玖、發明說明 【發明所屬之技術領域】 本發明是屬於有關液晶、半導體等之領域的基板的處 理技術。 【先前技術】 關於液晶或是半導體的製造，是對著基板吐出洗淨液 、光阻液或是顯影液等的液體，施行洗淨處理、光阻塗佈 或是顯影處理等的各處理。像這樣對著基板上吐出液體的 時候，若在基板上存在有機污染物等之雜質，因表面張力 的影響，引起液體彈跳，形成均勻之處理的阻礙。 因此，應該在液體吐出前除去基板上的雜質，施行 UV照射處理。該UV照射處理是將紫外線照射到基板上 ，能針對各液體的基板表面改善濕潤性。 可是，由於UV照射處理基板會受熱，故例如作作利 用塗佈液的塗佈處理的前工程而施行照射處理的時候，會 有產生斑痕的情形。另外，因UV照射處理是照射紫外線 ’故會有令塗膜感光之虞，就不能作爲顯影處理的前工程 而使用。甚至應用在紫外線之照射裝置的燈具類是屬於高 價的消耗品，成本上也發生問題。 【發明內容】 本發明是屬於欲解決上記従来技術之課題的發明，其 目的之情形是針對對著基板的表面吐出液體的處理，提供 -4 - (2) 1307523 得到更適當結果的技術。 根據本發明可針對包括：對著基板的表面吐出特定液 體的液體吐出工程、和作爲前述液體吐出工程的前處理而 進行基板的表面處理的表面處理工程的基板處理方法，提 供一以在前述表面處理工程，對著前述基板的表面來照射 大氣壓電漿爲其特徵的基板處理方法。 另外，根據本發明可提供一以具備有：對著基板的表 面吐出特定液體的液體吐出手段、和對著前述基板的表面 來照射大氣壓電漿的照射手段、和使得前述液體吐出手段 和前述照射手段在前述基板上移動的移動手段爲其特徴的 基板處理裝置。 【實施方式】 欲實施發明的最佳形態 以下參照圖面來說明本發明的最佳實施形態。第1 A 圖是表示有關本發明之一實施形態的基板處理方法的處理 流程圖。在第1圖的例子是作爲對著屬於處理對象的基板 的表面來吐出特定液體的液體吐出工程而設定有：洗淨工 程（S2)、光阻塗佈工程（S5)及顯影處理工程（S9)， 另外，作爲相當於該些工程的前處理的基板的表面處理工 程’設定有大氣壓電漿照射處理工程（SI、S4、S8 )。本 實施形態的基板處理方法可適用於液晶的製造、半導體的 製造’作爲所處理的基板’例如舉例有玻瑀基板、半導體 之晶圓等。 -5- (3) 1307523 大氣壓電漿照射處理工 基板的表面來照射大氣壓電 。大氣壓電漿是例如在大氣 與非活性氣體或是非活性氣 施加交流電壓，就能激勵而 本實施形態是將依此所產生 板上，而進行基板的表面處 ，與真空電漿相比，不會損 行有機污染物的洗淨和表面 候，不像UV照射裝置的燈 ，甚至於顯影處理前，即使 光，因此很適合基板的處理 在本實施形態是在將各 照射大氣壓電漿，施行所謂 面處理，防止易產生在液體 於藉由光阻液和顯影液等之 的塗膜等，就能得到更適當 前來照射大氣壓電漿，就能 潤性，洗淨液不會在基板表 淨。 作爲大氣壓電漿照射處 壓電漿的照射形態，例如， 板之短邊方向的長度的幅度 裝置A，一邊照射大氣壓電 程（SI、S4、S8)是屬於對著 漿，以改善基板表面的濕潤性 壓或是其附近的壓力下，針對 體和反應性氣體的混合氣體來 產生大氣壓輝光放電電漿。在 的大氣壓電漿連 的照射在基 理，根據像這樣的大氣壓電漿 傷到照射對象物，能以低溫進 改質。另外，大氣壓電漿的時 具屬於需要頻繁更換的消耗品 照射到基板上也不會使塗膜感 〇 種的液體吐出到基板之前，來 除去基板上之有機污染物的表 吐出時之斑痕的發生等，例如 吐出的塗佈處理中，得到均勻 的結果。另外，在基板之洗淨 針對基板表面提高洗淨液的濕 面上彈跳，能得更有効果的洗 理工程（SI、S4' S8)的大氣 如第1Β圖所示，以對應於基 ，將可照射大氣壓電漿的照射 漿一邊移動到基板的長手方向 -6- (4) 1307523 在基板上進行掃描，對著基板表面全體來照射大氣壓電漿 亦可。另外，如第1C圖所示，使得可對著基板表面全體 來照射大氣壓電漿的照射裝置B在基板上方待機，於處理 時使裝置下降到基板表面近傍，一次將大氣壓電漿照射到 基板表面全體的方式亦可。 再者，大氣壓電漿的照射可在基板表面的全體進行， 僅一部分進行亦可。例如，對著基板上吐出液體的時候， 由於在其吐出開始之處，特別容易產生斑痕等，故只在吐 出開始之處，進行大氣壓電漿的照射亦可，另外，於基板 的端部，由於其表面的濕潤性不佳，故塗膜易產生隆起等 ，因爲塗膜容易零亂，故在基板之各端的至少任一端的特 定領域進行亦可。 以下針對其它工程做說明。S2的洗淨工程是屬於作 爲S5的光阻塗佈工程之準備，而在基板表面將純水等的 洗淨液吐出到基板表面，來沖洗基板表面的灰塵等的工程 。S3的脫乾工程是屬於藉由S2的洗淨工程來乾燥附著有 洗淨液的基板的工程。S 5的光阻塗佈工程是屬於對著基 板表面吐出光阻液，形成均勻的光阻膜的工程。該光阻塗 佈工程可採用例如一邊使基板旋轉一邊對於基板的中心吐 出光阻液，且利用遠心力使光阻液流動到基板全體而加以 塗佈的自旋塗佈方式、和橫切過靜止的基板上之方式以單 數或是複數配置光阻液的吐出噴嘴，且使得該吐出噴嘴沿 著基板而移動來進行光阻液之塗佈的槽式塗佈方式等。另 外’在利用槽式塗佈方式之塗佈處理之後，更將塗佈有光 -一卜 (5) 1307523 阻液的基板搬送到自旋塗佈方式的裝置，來施行光阻液之 塗膜的均勻化亦可。再者，此時，於自旋塗佈方式之裝置 ，並不需要吐出光阻液。 S 6的軟式烘乾工程是屬於在s 5的光阻塗佈工程，使 形成在基板上的光阻膜乾燥的工程。S7的露光工程是屬 於例如得到在將特定遮罩配置在基板上之後，加以曝光光 阻膜爲其目的之圖案等的工程。S 9的顯影處理工程是屬 於對著基板表面吐出顯影液’加以顯影基板表面的光阻膜 的工程。 其次，針對本發明的基板處理裝置做說明。第2A圖 是表示有關本發明之一實施形態的基板處理裝置1 0 '的構 成的槪略立體圖（部分斷面），第2B圖是沿著第2A圖 的線XX的端面圖。基板處理裝置1 〇是屬於具備有：載 置在載置台1 〇a上的基板的表面沿著洗淨液、光阻液、顯 影液等之各種液體的液體吐出機11、和對著基板的表面 來照射大氣壓電漿的照射機1 2、和搭載著液體吐出機11 及照射機1 2，並使該些在基板上移動的移動機I 3，以使 基板靜止的状態來實行處理之形態的裝置。在本實施形態 是以方形的基板作爲處理對象。 液體吐出機1 1是屬於在其下端具備有以面對著基板 表面的方式複數配設在基板之短邊方向的噴嘴l〗a，從該 噴嘴11a吐出各種液體，且一次只要基板之短邊方向的一 條線部分就能吐出液體，例如屬於應用槽式塗佈方式的吐 出機。照射機1 2是屬於在其内部產生大氣壓電漿，且將 (6) 1307523 此從其下面向著基板表面進行照射。 移動機1 3是屬於由沿著配置在基板之兩側的一對導 軌14而移動的一對驅動部1 3 a、和設置在各驅動部1 3 a 之引導板1 3 a /上的昇降汽缸1 5、和以短邊方向橫切過基 板的方式（正交於移動方向的方向）連結在昇降汽缸15 間的同時，以旋吊液體吐出機1 1及照射機1 2的方式而加 以支撐的支撐部13b所形成，驅動部13a在導軌14移行 ，使液體吐出機11和照射機12在基板上移動到基板的長 手方向。另外，昇降汽缸15是用來昇降支撐部13b，並 針對基板來調整液體吐出機1 1及照射機1 2的間隔。 在此，若針對液體吐出機1 1和照射機1 2的配置関係 做說明，本實施形態的情形，對液體吐出機1 1而言，照 射機1 2是配置在處理時的該些移動方向換句話說就是其 行進方向。藉由該配置，使移動機1 3 —次移動到基板的 長手方向的話’能一倂進行大氣壓電漿照射處理工程和液 體吐出工程’實際上兩者就能同時進行。因此，具有所謂 可縮短處理時間的優點。 第3 A至3 C圖是利用基板處理裝置1 〇的基板處理時 的動作說明圖。第3A圖是表示照射機12配置在基板之 端部之中的處理之開始端部上的形態，藉由照射機1 2讓 大氣壓電漿照射到基板上，一方面，吐出機丨：還未吐出 液體。其次’移動機】3開始在圖的矢印方向移動，吐出 機1 1配置在基板的開始端部上的話，照射機I 2繼續進行 大氣壓電漿的照射，一方面’吐出機1 1也加以作用而吐 (7) 1307523 出液體。 第3圖是表示吐出機1 1及照射機1 2在基板的中央移 動的形態’使該兩者作用。然後，表示移動機1 3繼續進 行移動’吐出機1 1到達基板端部中之處理的終了端部上 之形態的是第3 C圖。於同圖中，照射機1 2被配置到基板 外上’就結束大氣壓電漿的照射。之後，若移動機〗3進 一步移動，吐出機11也會到達基板外上，即結束液體的 吐出。 在本實施形態是能夠像這樣地一倂進行大氣壓電漿照 射處理工程和液體吐出工程，具有所謂可比各別進行該些 工程的時候更加縮短處理時間的優點。再者，在第3 A圖 至3C的例子是對著基板表面全體來照射大氣壓電漿，不 過也可以部分進行。此時’例如，如第4 A圖所示，僅針 對易產斑痕的基板之處理的開始端的一定領域X 1來照射 大氣壓電漿亦可，且亦一倂針對終了端的一定領域X2來 照射亦可。甚至’吐出機1 1及照射機1 2在基板上移動之 際’如圖4B所示’以針對沿著其移動方向的基板之兩端 的特定領域Y來照射大氣壓電漿的方式亦可。 像這樣地針對基板之兩端的特定領域來照射大氣壓電 漿的時候’照射機〗2不需要一樣地設置在基板的整個短 邊方向。第5圖是表示僅針對基板之兩端的特定領域來照 射大氣壓電漿時的基板處理裝置10的構成的槪略立體圖 (部分斷面）。同圖所示的例子是與第2 A圖之例子的情 形相異’照射機1 2 '是對應於基板的兩端部，設有兩個特 -10 - (8) 1307523 定寬度。 【圖式簡單說明】 第1 A圖是表示有關本發明之一實施形態的基板處理 方法的處理流程圖。 第〗B圖及第1C圖是表示大氣壓電漿的照射形態例 的圖。 第2A圖是表示有關本發明之一實施形態的基板處理 裝置10之構成的槪略立體圖（部分斷面）。 第2B圖是沿著第2A圖之線XX的端面圖。 第3 A〜3 C圖是利用基板處理裝置1 0的基板處理時 的動作說明圖。 第4A及4B圖是屬於對著基板之一部來照射大氣壓 電漿之情形的說明圖。 第5圖是表示僅對著基板之兩端的特定領域來照射大 氣壓電漿之情形的基板處理裝置10的構成的槪略立體圖 (部分斷面）。 [圖號說明] 10 基板處理裝置 1 0 a載置台 11 液體吐出機 11a噴嘴 12 照射機 -11 - (9) (9)1307523 13 移動機 1 3 a驅動部 13a ^ 引導板 1 3 b支撐部 14 導軌 15 昇降汽缸 -121 1307523 TECHNICAL FIELD OF THE INVENTION The present invention relates to a processing technique for a substrate relating to the fields of liquid crystals, semiconductors, and the like. [Prior Art] For the production of a liquid crystal or a semiconductor, a liquid such as a cleaning liquid, a photoresist, or a developing solution is discharged to the substrate, and each treatment such as a cleaning treatment, a photoresist coating, or a development treatment is performed. When the liquid is discharged onto the substrate as described above, if impurities such as organic contaminants are present on the substrate, the liquid bounces due to the influence of the surface tension, and the uniform treatment is hindered. Therefore, the impurities on the substrate should be removed before the liquid is discharged, and the UV irradiation treatment is performed. This UV irradiation treatment irradiates ultraviolet rays onto the substrate, and the wettability can be improved for the surface of each liquid substrate. However, since the substrate is heated by the UV irradiation, for example, when the irradiation treatment is performed for the pre-engineering process using the coating liquid, a stain may occur. Further, since the UV irradiation treatment is to irradiate the ultraviolet ray, the coating film may be exposed to light, and it cannot be used as a pre-engineering process. Even lamps used in ultraviolet irradiation devices are expensive consumables, and there are problems in cost. DISCLOSURE OF THE INVENTION The present invention is an invention for solving the problem of the above-mentioned technique, and a target thereof is a technique for providing a more appropriate result for a process of discharging a liquid against a surface of a substrate. According to the present invention, a substrate processing method including a liquid discharge process for discharging a specific liquid against a surface of a substrate, and a surface treatment process for performing surface treatment of the substrate as a pretreatment of the liquid discharge process can be provided on the surface The processing method is a substrate processing method characterized by irradiating an atmospheric piezoelectric slurry against the surface of the substrate. Further, according to the present invention, there is provided a liquid discharge device including: a liquid discharge means for discharging a specific liquid against a surface of the substrate; and an irradiation means for irradiating the atmospheric piezoelectric slurry against the surface of the substrate, and the liquid discharge means and the irradiation The moving means for moving on the aforementioned substrate is a special substrate processing apparatus. BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings. Fig. 1A is a flow chart showing the processing of the substrate processing method according to an embodiment of the present invention. In the example of the first embodiment, a liquid discharge process for discharging a specific liquid against a surface of a substrate to be processed is set as follows: a cleaning process (S2), a photoresist coating process (S5), and a development process (S9). In addition, as the surface treatment project of the substrate corresponding to the pre-processing of these projects, the atmospheric piezoelectric slurry irradiation treatment process (SI, S4, S8) is set. The substrate processing method of the present embodiment can be applied to the production of liquid crystals and the manufacture of semiconductors. As the substrate to be processed, for example, a glass substrate, a semiconductor wafer, or the like can be exemplified. -5- (3) 1307523 The atmospheric piezoelectric slurry illuminates the surface of the substrate to illuminate the atmospheric piezoelectric. The atmospheric piezoelectric slurry is excited by applying an alternating voltage to the atmosphere, an inert gas, or an inert gas, for example. In this embodiment, the plate is formed on the surface, and the surface of the substrate is compared with the vacuum plasma. It will damage the cleaning and surface of organic pollutants, unlike the lamps of UV irradiation devices, even before the development process, even if it is light, it is very suitable for the processing of substrates. In this embodiment, each of the irradiated atmospheric piezoelectric pastes is implemented. The so-called surface treatment prevents the liquid from being applied to the coating film by a photoresist or a developing solution, etc., so that it can be more appropriately irradiated to the atmospheric piezoelectric slurry, and the cleaning liquid can be moisturized. net. As the irradiation form of the piezoelectric slurry at the irradiation of the atmospheric piezoelectric slurry, for example, the amplitude device A of the length in the short-side direction of the plate irradiates the atmospheric piezoelectric process (SI, S4, S8) to belong to the opposing slurry to improve the surface of the substrate. At a wet pressure or a pressure in the vicinity thereof, an atmospheric pressure glow discharge plasma is generated for a mixed gas of a body and a reactive gas. In the case where the atmospheric piezoelectric slurry is irradiated in the atmosphere, the atmospheric piezoelectric slurry is damaged by this, and the temperature can be modified at a low temperature. In addition, the time of the atmospheric piezoelectric slurry is such that the consumables that need to be frequently replaced are irradiated onto the substrate, and the liquid of the coating film is not discharged before the substrate is discharged to the substrate to remove the spots on the surface of the organic contaminants on the substrate. A uniform result is obtained in the coating treatment such as the occurrence of the discharge. In addition, in the cleaning of the substrate, the wet surface of the cleaning liquid is raised on the surface of the substrate, and the atmosphere of the cleaning process (SI, S4' S8) which is more effective is shown in Fig. 1 to correspond to the base. The irradiation slurry that can illuminate the atmospheric piezoelectric slurry is moved to the long-hand direction of the substrate, -6-(4) 1307523, and scanned on the substrate, and the atmospheric piezoelectric slurry may be irradiated against the entire surface of the substrate. Further, as shown in FIG. 1C, the irradiation device B that can irradiate the atmospheric piezoelectric slurry against the entire surface of the substrate is placed on the substrate, and the device is lowered to the surface of the substrate at the time of processing, and the atmospheric piezoelectric slurry is irradiated to the surface of the substrate at a time. The whole way is also available. Further, the irradiation of the atmospheric piezoelectric slurry may be performed on the entire surface of the substrate, and only a part of it may be carried out. For example, when a liquid is ejected on a substrate, a spot or the like is particularly likely to occur at the beginning of the discharge. Therefore, the atmospheric piezoelectric slurry may be irradiated only at the beginning of the discharge, and at the end of the substrate. Since the wettability of the surface is not good, the coating film is liable to be embossed or the like, and since the coating film is liable to be disordered, it may be carried out in a specific field at at least one end of each end of the substrate. The following is a description of other projects. The cleaning process of S2 is a preparation for the photoresist coating process of S5, and the cleaning liquid such as pure water is discharged onto the surface of the substrate to wash the dust on the surface of the substrate. The desiccant process of S3 is a process in which the substrate to which the cleaning liquid adheres is dried by the cleaning process of S2. The photoresist coating engineering of S 5 is a project in which a photoresist is spit out against the surface of the substrate to form a uniform photoresist film. In the photoresist coating process, for example, a spin coating method in which a photoresist is discharged to the center of a substrate while rotating the substrate, and a photoresist is applied to the entire substrate by a telecentric force, and a cross-cut can be used. In the stationary substrate, the discharge nozzle of the photoresist is disposed in a single or plural number, and the discharge nozzle is moved along the substrate to perform a groove coating method of applying the photoresist. In addition, after the coating treatment by the groove coating method, the substrate coated with the light-battery (5) 1307523 liquid-repellent solution is transferred to a spin coating device to apply a coating film of the photoresist liquid. Homogenization is also possible. Further, at this time, in the spin coating apparatus, it is not necessary to discharge the photoresist. The soft drying process of S 6 is a work of the photoresist coating process of s 5 to dry the photoresist film formed on the substrate. The exposure process of S7 is, for example, a process in which a specific mask is placed on a substrate, and a pattern of an exposure photoresist film is applied thereto. The development processing of S 9 is a process of developing a photoresist film on the surface of a substrate against a surface of a substrate. Next, the substrate processing apparatus of the present invention will be described. Fig. 2A is a schematic perspective view (partial cross section) showing a configuration of a substrate processing apparatus 10' in accordance with an embodiment of the present invention, and Fig. 2B is an end view taken along line XX of Fig. 2A. The substrate processing apparatus 1 is a liquid discharge machine 11 including a liquid on the surface of the substrate placed on the mounting table 1a, along with various liquids such as a cleaning liquid, a photoresist liquid, and a developing solution, and a substrate facing the substrate. The irradiation machine 1 that irradiates the atmospheric piezoelectric slurry on the surface, and the liquid discharge machine 11 and the irradiation machine 12 are mounted thereon, and the moving machine I 3 that moves on the substrate is subjected to processing in a state where the substrate is stationary. s installation. In the present embodiment, a square substrate is used as a processing target. The liquid discharge machine 1 1 is provided with a nozzle l a in the lower end of the substrate so as to face the surface of the substrate, and discharges various liquids from the nozzle 11 a, and the short side of the substrate is provided at a time. A line portion of the direction can discharge liquid, for example, a sprinkler that uses a slot coating method. The illuminator 1 2 belongs to the generation of an atmospheric piezoelectric slurry therein, and (6) 1307523 is irradiated from the lower surface thereof toward the surface of the substrate. The mobile unit 13 is a pair of driving portions 13 3 a that are moved along a pair of guide rails 14 disposed on both sides of the substrate, and lifts on the guide sheets 1 3 a / provided on the respective driving portions 1 3 a The cylinder 15 and the method of crossing the substrate in the short-side direction (the direction orthogonal to the moving direction) are connected between the lift cylinders 15 and are rotated by the liquid discharge machine 1 1 and the irradiation machine 1 2 The support portion 13b is formed, and the driving portion 13a moves on the guide rail 14 to move the liquid discharge machine 11 and the irradiation machine 12 on the substrate to the long-hand direction of the substrate. Further, the lift cylinder 15 is for raising and lowering the support portion 13b, and adjusts the interval between the liquid discharge machine 1 1 and the irradiation machine 12 for the substrate. Here, the arrangement relationship between the liquid discharge machine 1 1 and the irradiation machine 1 2 will be described. In the case of the present embodiment, the liquid discharge machine 1 1 is disposed in the movement direction at the time of processing. In other words, it is the direction of travel. With this arrangement, when the mobile unit 13 is moved to the long-hand direction of the substrate, the atmospheric piezoelectric slurry irradiation treatment process and the liquid discharge processing can be performed simultaneously. Therefore, there is an advantage that the processing time can be shortened. 3A to 3C are explanatory views of the operation when the substrate processing by the substrate processing apparatus 1 is performed. Fig. 3A is a view showing a state in which the irradiation machine 12 is disposed at the beginning end of the processing in the end portion of the substrate, and the atmospheric piezoelectric slurry is irradiated onto the substrate by the irradiation machine 12, and on the other hand, the discharge machine is not yet Spit out the liquid. Next, the 'mobile machine' 3 starts to move in the sagittal direction of the figure, and when the discharge machine 1 1 is placed on the beginning end of the substrate, the irradiation machine I 2 continues to irradiate the atmospheric piezoelectric slurry, and on the one hand, the spouting machine 1 1 also acts. And spit (7) 1307523 out of the liquid. Fig. 3 is a view showing a state in which the discharge machine 1 1 and the irradiation machine 1 2 are moved at the center of the substrate. Then, the third C-picture is shown in the form in which the mobile unit 13 continues to move the end portion of the process in which the discharge machine 1 1 reaches the end portion of the substrate. In the same figure, the irradiation of the atmospheric piezoelectric slurry is terminated by the irradiation of the irradiator 12 to the outside of the substrate. Thereafter, if the moving machine 3 moves further, the discharge machine 11 also reaches the outside of the substrate, that is, the discharge of the liquid is ended. In the present embodiment, it is possible to carry out the atmospheric piezoelectric slurry irradiation treatment project and the liquid discharge project as described above, and it is advantageous in that the processing time can be further shortened when the respective projects are performed separately. Further, in the examples of Figs. 3A to 3C, the atmospheric piezoelectric slurry is irradiated against the entire surface of the substrate, but it may be partially performed. At this time, for example, as shown in FIG. 4A, it is also possible to irradiate the atmospheric piezoelectric slurry only for a certain field X 1 at the beginning of the processing of the substrate susceptible to the stain, and also to irradiate the certain area X2 for the terminal end. can. Even when the discharge machine 1 1 and the irradiation machine 1 2 are moved on the substrate, as shown in Fig. 4B, the atmospheric piezoelectric slurry may be irradiated with respect to the specific field Y of both ends of the substrate along the moving direction. When the atmospheric piezoelectric paste is irradiated to a specific field of both ends of the substrate as described above, the "illuminator" 2 does not need to be disposed in the entire short side direction of the substrate. Fig. 5 is a schematic perspective view (partial cross section) showing the configuration of the substrate processing apparatus 10 when the atmospheric piezoelectric slurry is irradiated only for a specific region of both ends of the substrate. The example shown in the figure is different from the case of the example of Fig. 2A. The irradiator 1 2 ' corresponds to both end portions of the substrate, and has two special widths of -10 - (8) 1307523. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1A is a flowchart showing the processing of a substrate processing method according to an embodiment of the present invention. The Fig. B and Fig. 1C are diagrams showing an example of the irradiation pattern of the atmospheric piezoelectric slurry. Fig. 2A is a schematic perspective view (partial cross section) showing a configuration of a substrate processing apparatus 10 according to an embodiment of the present invention. Fig. 2B is an end view taken along line XX of Fig. 2A. 3A to 3C are explanatory diagrams of operations when the substrate processing of the substrate processing apparatus 10 is performed. 4A and 4B are explanatory views of a case where an atmospheric pressure plasma is irradiated to one of the substrates. Fig. 5 is a schematic perspective view (partial cross section) showing the configuration of the substrate processing apparatus 10 in the case where the atmospheric piezoelectric slurry is irradiated only against a specific region of both ends of the substrate. [Description of Drawing Number] 10 Substrate processing apparatus 1 0 a mounting table 11 liquid discharging machine 11a nozzle 12 irradiation machine-11 - (9) (9) 1307523 13 moving machine 1 3 a driving portion 13a ^ guiding plate 1 3 b supporting portion 14 rail 15 lifting cylinder-12