TWI307128B - - Google Patents

Description

1307128 IX. Description of the invention: [Technical field to which the invention pertains] The invention relates to a wafer-level vacuum packaging method in which a through-hole is filled and sealed with a molten metal material. [Prior Art] According to a conventional microstructure, The optoelectronic component, the radio frequency component, and the microelectromechanical component are specifically packaged in a single crystal in the county. As shown in Fig. 8, the J system is provided on the base 6 with a microstructure 6 1 and then Block 6:: US: ί6 2 'The cover 6 2 has a space 6 3 for the microstructure of the second base 6 丄, and the side of the bottom end of the cover 6 2 has a gap 6 2 1, for the space 6 3 in the cover 6 2 is pumped = empty state, and then the gap 621 is closed by the (four) glue method, and is mounted. The notch 6 2 1 of the cover 6 2 is fastened on the side, and the j-knife is purchased at the time of dispensing, so the new one is not suitable for the package of the crystal: the amount of the glue is very small, which is easy to cause The dispensing position is not easy to control, and the gap 6 2 1 cannot be reliably closed. There is another wafer-level packaging method. As shown in FIG. 9, a plurality of microstructures 7 are disposed on a wafer 7, and then a process is performed on each of the microstructures 71. Each of the cover covers 7 2, 1 and the top surface of the cover 72 are respectively provided with a hole 72 1 for drawing the "?3" in the cover 7 2 into a true recording state, and then performing the test = plating on the layer The encapsulation layer 74 is used to close the hole 721 and then form a single die through the ^ 1307128 to complete the encapsulation. The foregoing packaging method can be packaged in a wafer level manner to increase the efficiency of the packaging process, but The hole 7 2 上 on the cover 7 2 must be controlled to a size of 1 to 2 μm or less, otherwise the particles of the evaporation material cannot be filled when the encapsulation layer 74 is vapor-deposited. The hole 7 2 1 makes it impossible to close the hole 7 2丄, so it is necessary to open the tiny hole 72 by a high-order process, and the cost of the dream increases. 诃裒^ When the steaming encapsulation layer is 7 4 The metal material is a steamed material 4, and when the metal particles of the vapor deposition material are deposited on the cover 71, there are some metal particles. The hole 7 2 1 falls into the cover 72, and is deposited on the micro-two structure 71, and pollutes it, thereby affecting the performance of the microstructure 7 1 .-, resulting in poor quality. In addition, the etching process is removed. When the sacrificial layer around the microstructure 7 i is limited, since the thickness of the sacrificial layer between the cover 7 2 and the microstructure 7 1 is limited, the effect of the engraving is not easy to control, and the effect of the engraving is not easy to control, and it is impossible to green. The sacrificial layer around the microstructure 7 1 is removed, and the microstructure is affected to reduce the yield of the process. b In addition, the above-mentioned film deposition is used to achieve vacuum packaging, and the vacuum degree of the package environment needs to reach a certain level. The deposited dry material is deposited smoothly on the sediment, for example, when the steam is deposited by the thermal resistance wire steamer, the required vacuum is required to meet the standard. However, the requirement of high specification equipment means high cost. Therefore, for the conventional micro-structure encapsulation method, both in structure and 6 1307128 'has still to be improved. The lack of production in the process [invention content] wafer ===, in = above Problem with - kind In the way, it can avoid (4)^), and the molten metal of the molten metal is melt-encapsulated and dyed.

In order to solve the above problems, it is provided that it can be further processed in a lower temperature process, and the wafer level vacuum packaging method (1) is melt-sealed. For the purpose of the present invention, the present invention includes a wafer level vacuum package, which comprises the following steps: The package structure process provides a substrate and a cover, wherein the substrate is provided with a plurality of microstructures. The bribe cover can be covered on the substrate with a plurality of microstructures, and the cover and the substrate respectively have a space between the microstructures for respectively accommodating the microstructures, and the seal Covering one surface of the substrate different from the cover and at least one of the spaces corresponding to the space, respectively, is provided to connect the spaces; the packaging process is performed at the interface between the substrate and the cover Do not have - Jin Guangzhi (4) material, and fill the metal-melting material in each of the through-holes, and apply - load on the molten metal of the cover metal, and then the two relative substrates and seals The environment in which the cover is located is vacuumed, and a heat source is continuously applied thereto to apply a heat source to simultaneously melt the molten materials of the two metals, thereby simultaneously completing the bonding of the substrate and the cover and sealing the through holes. The micro within the space Mechanism is in a vacuum state. The above and other objects and advantages of the present invention will be readily understood from Of course, the invention may be different in some of the components, or the arrangement of the components, but the selected embodiments are described in detail in the present specification, and the construction thereof is shown in the drawings. • [Embodiment] Please refer to Fig. 1 to Fig. 7, which show the structure of the embodiment selected for the present invention, which is for illustrative purposes only and is not limited by this structure in the patent application. The present embodiment provides a wafer level vacuum packaging method (1), which includes the following steps: The package structure process 1 provides a substrate 1 1 and a cover 1 2, wherein the substrate 1 1 and the cover 1 2 are One of the materials of the high temperature resistant material which can be applied to the semiconductor semiconductor process or the microelectromechanical process, and the substrate 11 has a plurality of microstructures 13 on one side, and each of the microstructures 1 3 One of the components of the photovoltaic device, the radio frequency component, and the microelectromechanical component is fabricated by one of the microelectromechanical technology and the semiconductor process, and the cover 12 can be covered on the substrate 1 1 to have a plurality of microstructures 1 3 One cover, and the cover 12 and the substrate 1 1 respectively have a space 14 between the microstructures 1 3 for respectively accommodating each of the microstructures 1 3 , and the cover 1 2 is Different from covering one of the substrates 1 1

At 1307128, at least a uniform through hole 15 is opened at a position corresponding to each of the spaces 14 to provide communication for each of the spaces 14. The encapsulation process 2 is characterized in that a metal molten material 2 1 A is disposed at the junction of the substrate 11 and the cover 12, and at least one metal corresponding thereto is disposed at each of the through holes 15. The material 2 1 B is melted, and a load 3 2 is applied to the metal smelting material 2 1 B of the cover 12, and the environment of the two opposite substrates 1 1 and the cover 1 2 is vacuumed. And continuing to apply a heat source 3 3 to simultaneously melt the molten metal 2 1 A, 2 1 B of the two metals, and simultaneously complete the bonding of the substrate 1 1 and the cover 12 and the through holes. The sealing of 15 is such that the microstructures 13 in each of the spaces 14 are in a vacuum state. Please refer to FIG. 2 and FIG. 3 , which are related to the process description of the substrate 1 1 and the cover 12 of the package structure in the embodiment. In the second figure, the chip (1 〇〇) single crystal germanium wafer is selected. As the substrate 11, a layer of oxidized layer 7111 is formed on the top surface and the bottom surface of the substrate ^1, and an adhesive layer 2 is formed on the top surface of the substrate 11. In this embodiment, In Fig. 3, a piece of 100) single crystal stone wafer is selected as the adhesive layer of the top surface of the 191 layer. The light pu 1 layer is formed on the adhesive layer 112 by lithography. In the process, the fusion of the metal between the substrate 11 and the cover 12 is defined by the fusion λ, and the set region 1 1 4 is here, and then the phase is formed on the A, 'Taiyin 1 4 Corresponding metal molten material 2 1 Made by electroplating t: Metallic molten material here 2 1 A-borrowing 1307128 Cover 1 2 'and cover it! 2 placed in the furnace 贫 贫 贫 贫 贫 ' ' ^ ^ ^ ^ ^ ^ ^ ^ ^ 之 之 之 之 之 之 之 之 之 之 之 之 之 之 之 之 之 之 之 之 之 之 之 之 之 之 之 之 之 之 之 之The steps associated with going to 2 兮 # 〇 , , , , , , 112 112 112 112 112 112 112 112 112 相关 相关 相关 相关 相关 112 112 相关 112 112 112 112 112 相关 相关 相关 相关 相关 相关 相关 相关 相关 相关 相关 相关

IFm_^ & 丄 by / secret engraved (Β〇Ε) and dry (four) (R, , remove the protective layer of the etched area, so that the area of the engraved heart is exposed, and then use the non-isotropic wet money 1 2 The top of the area is engraved to the depth of the area, so that the cover is worn/infiltrated by the perforation 15 and at the same time the space is formed on the bottom surface corresponding to each of the through holes ^4. Each of the through-holes is formed at the periphery of each of the through-holes 1 5 - a layer of splicing! 2 3, at (4) layers! 2 3 series - a metal made by vapor deposition, which can be used for the metal on each of the shells. The dazzling material 2 1 B is fused with it and is in close contact with it, as shown in Figure 4, and each of the through holes! The molten metal 21B of the metal can be one of - tin balls, tin blocks and tin sheets. In the present embodiment, the solder ball is used as a description; and the bottom surface of the cover 2 is respectively formed with an adhesive layer 2 4 at the periphery of each of the spaces 14 . In this embodiment, each of the spaces The adhesive layer of the periphery of i 4 is a metal layer made by evaporation, which can be used as a molten metal of the metal between the substrate and the cover 12 2 1 A is melted and is in close contact with it. Please continue to refer to Fig. 4, the side of the substrate 1 1 having the majority of the microstructures 1 3 is aligned with the side of the cover 1 2 having the majority of the space 14 , and 1307128 The molten metal 2 1 B of the metal is placed on each of the through holes 15 , and then the package structure is placed in a vacuum chamber 3; [wherein, a load 3 2 is placed on the top surface of the cover 12, The molten material 2 1 A, 2 1 B of the two metals at the through hole 15 and the substrate 11 and the cover 12 are pressed, and the molten material 2 of the metal on the through hole i 5 is further 1 B (the solder ball) has a slight gap with each of the through holes i 5 , so that the vacuum chamber 3 can be vacuumed, and after being evacuated, it is placed in the vacuum chamber 31 The heat source 3 3 applies a heating of the radiant heat 3 3 to the vacuum chamber 31. In the embodiment, the heat source is a heater for the package structure to be placed thereon. The two metal smelting materials UA, 21B at the through hole 15 and at the junction of the substrate 11 and the cover 12 are simultaneously smelted, and the load is applied at the load

The sealing of the through hole 15 and the metal dragon material 2 for the substrate 1 1 and the cover joint *A: η:! The best t-mode refining fills each of the through holes while completing the Package: structure: 2 joint 'by this, after the installation is completed, the joints and seals are divided into four quarters, one single package crystal. Knife. J. The molten metal of the metal described in the article is about 183 degrees, so the core is encapsulated: the bright point temperature is used for the grafting and joining, so no extra temperature is required. The advantages of the low temperature process in the package structure are from the structure 13, and the damage caused by the high temperature 1307128 process is not caused. As shown in the photo in the attached article, the molten material 2 of the metal (the solder ball) flows into each of the through holes i 5 after being melted, and when it flows to the bottom of each of the through holes 15 5 The molten material 2 of the metal (the solder ball) itself has a certain degree of viscous tension, so that the molten material 21B (the solder ball) of each of the molten metal is melted and the molten portion can be condensed at the bottom of each of the through holes 15 . And solidifying after cooling; and when flowing in each of the through holes 15 5, it can be in close contact with the welded layer ► 123 around the through holes i 5 due to high temperature, so that the package structure is finally Each of the spaces 14 forms a vacuum state that is isolated from the outside world. In summary, it is understood that the present invention is melt-wrapped by a molten metal material 2 i B (tin ball), and when the molten portion of the metal molten material 2 i B (tin ball) is closed to each of the through-holes 5 Due to the viscosity and surface tension of the molten metal material 2 1 B (tin ball), it does not drip from the through hole 15 to the microstructure 1 3, so it is possible to avoid the time of the vapor deposition package.

The particles cause contamination of each of the microstructures 13, thereby increasing the yield of the process. W. Because the top surface of the cover 12 has a plurality of through holes 15 and can be metal by means of an appliance (not shown). The molten material 2丄B (the solder balls) is laid in an array in each of the through holes 15 of the cover 12 in an array, and after the vacuum chamber 3 1 is evacuated, by heat radiation 3 In the manner of 3 1 , the molten material 2 1 b (tin balls) of each of the metals can be melted, and all the through holes 15 on the cover 12 can be closed once to complete the wafer level packaging, so that the process is simple. And can reduce the cost advantage. 12 1307128 Moreover, the invention does not require a very high degree of vacuum, and can be packaged in a package structure, so that the vacuum instrument used in vacuum packaging has more selectivity, and the process equipment can be more selective. Reduce the cost of equipment costs. Moreover, the present invention employs a molten metal material 2 1 B (tin ball) for melt encapsulation, so that it has the advantage of a lower package temperature, and the requirements on the device can be simultaneously reduced. Of course, there are still many examples of the present invention. Please refer to FIG. 5, which is a second embodiment of the present invention in which the packaging process is completed at the same time, and is characterized in that: the molten material of the metal placed at each of the through holes is After the package structure has been placed in the vacuum chamber, it is placed on each of the through holes, so that the process sequence can be adjusted according to different requirements of the process. Please refer to FIG. 6 to FIG. 7 . The present invention has another embodiment, which first performs a bonding process between the cap and the substrate, and then performs a packaging process of the package structure, including the following steps: The process 1 A provides a substrate 1 1A and a cover 1 2 A, wherein the substrate 1 1 A is provided with a plurality of microstructures 1 3 A, and the cover 1 2 A can be attached to the substrate 1 1 A is provided with one surface of the micro-structure 1 3A, and the cover 1 2 A corresponds to the substrate 1 1 A, and each of the microstructures 1 3 A has a space of 1 4 A for respectively accommodating each of the micro-structures The structure 13A, and the cover 12A is different from the one surface of the substrate 1 1A, and at least a uniform perforation 15A is respectively opened at a position corresponding to each of the spaces 1 4 A, and the space is connected to each of the spaces 1 4 A In this embodiment, the substrate 1 1 A of the package structure and the cover 1 2 A are related to the package structure of the first embodiment; the bonding process 5 1 ' is attached to the substrate 1 ία At the junction with the cover 12A, at least one metal molten material 2 2 A is disposed on the substrate

1 1A is aligned with the cover 1 2A, and a load 3 2A and a heat source 3 3 A are applied thereto to make the molten material 2 2 A of the metal where the substrate 11 a meets the cover 1 2A. Melting, the substrate ii is bonded to the cover 12; the encapsulation process 5 2 is filled with a metal molten material 2 2 B at each of the through holes 15 5 A, and the bonded material is bonded The substrate ii A and the cover 1 2A are vacuumed, and a load 3 2 A and a heat source 3 3 A are continuously applied thereto. In this embodiment, the package structure is placed in a vacuum chamber 3 In 1A, a load 3 2A is placed on the top surface of the cover 1 2A to press the molten material 2 2B of the metal at the through hole 15 5A, and the molten material of the metal on each of the through holes 15 5 a 2 2 B (the solder ball) has a slight gap with each of the through holes 15 , so that the vacuum chamber 3 1A can be vacuumed, and after being evacuated, it is disposed in the vacuum chamber 3 1A. The heat source 3 3A is heated by applying a radiant heat to the vacuum chamber 3 1 to melt the molten metal 2 2 B of the metal at the through hole i 5 A, and under the pressure of the load 3 2A Each of the shells can be pierced with a 1 5A male, sealed, and finished to complete the wafer level vacuum sealing so that the microstructures 1 3 A in each of the spaces 1 4 A are in a vacuum state. The heat source in the embodiment is located in the vacuum chamber, and the molten material in the through hole is melted by the radiation heat. Of course, the heat source outside the vacuum chamber can be used to focus on the molten material, for example, by external laser focusing. It is melted 14 1307128 to seal the through-hole, and the effect of melting the molten material is also achieved. In this embodiment, a dicing process 4 A is further included, in which the packaged structure after bonding and encapsulation is cut along each of the spaces 1 4 A to complete a single package die. The other embodiment of the present invention described above clarifies the diversity of the process of the present invention, and can be adjusted according to the requirements of different processes. The above description of the embodiments is intended to be illustrative of the invention, and is not intended to limit the invention. From the above detailed description, it will be apparent to those skilled in the art that the present invention can achieve the above-mentioned objects, and is in accordance with the provisions of the Patent Law. Attachment: Photograph of the front and back of the cover of molten material (tin ball) in molten state [Simplified illustration of the drawing] Fig. 1 is a flow chart of the vacuum packaging method of the present invention. Fig. 2 is a schematic view of the substrate manufacturing process of the present invention. 4 is a schematic view of a package of the present invention, FIG. 5 is a schematic view of another embodiment of the present invention, and FIG. 6 is a flow chart of another embodiment of the vacuum packaging method of the present invention. FIG. FIG. 8 is a schematic view of a conventional package structure. FIG. 9 is a schematic view of another conventional package structure. [Main component symbol description] (conventional part) Base 6 cover 6 2 Space 6 3 Microstructure 7 1 Hole 7 2 1 Encapsulation layer 7 4 (part of the invention) Package structure process 1, 1 A cerium oxide 1 1 1 photoresist 1 1 3 cover 1 2, 1 2 A photoresist 1 2 2 Adhesive layer 1 2 4 Space 1 4, 1 4 A Metal melt material 2 1 A Metal melt material 2 2 A Vacuum chamber 3 1 , 3 1 A Heat source 3 3, 3 3 A Cutting process 4, 4 A package Process 5 2 Microstructure 6 1 Notch 6 2 1 Wafer 7 Cover 7 2 Space 7 3

Substrate 1 1 , 1 1 A Adhesion layer 112 Setting area 1 1 4 Ceria 121 Fusing layer 1 2 3 Micro structure 1 3, 1 3 A Through hole 15, 15A Metal molten material 2 1 B Metal molten material 2 2 B Load 3 2, 3 2 A Thermal radiation 3 3 1 Bonding process 5 1 16

Claims (1)

1307128 X1, the scope of application for patent: 曰 θ circular vacuum packaging method (1), including the following steps: Sealing I structural process, providing a substrate and a cover, wherein the soil = one side is provided with a number of micro-structures, and the seal The cover system can be covered on one side of the plurality of micro-structures, and the cover corresponds to the substrate: each of: "there is a space between the two sides" for respectively accommodating each of the micro-two (four) Opening at least a through hole at a position between the corresponding surfaces of the substrate to be connected to each of the spaces; the encapsulation process is at a junction of the substrate and the cover, Each of the δ has a molten metal material, and each of the through holes is filled with a molten metal of metal and is applied to the molten metal of the metal of the cover to carry a load between the two substrates. The ring in which the cover is located = true, and a heat source is continuously applied thereto so that the molten materials of the metal are simultaneously melted, and the joint between the substrate and the cover and the through seals are simultaneously completed, so that each Microstructures within the space In a vacuum state, the wafer and grade vacuum packaging method according to item 1 of the patent application scope (in the package structure process, a wafer-shaped substrate and a cover are provided), wherein the substrate and the cover are selected , glass and P c B and, can be applied to the C semiconductor process or the micro-electromechanical process of the same temperature-resistant material - the material 'and the micro-system is made of micro-electromechanical technology and semiconductor f-making One of the components, RF components and micro-electromechanical components. 17 1307128 Crystal Dream Wafer as Zhiyun # Early-layer dioxotomy, '=================================================================== ;='Reuse lithography】="It's 1 way to remove _ area: mode == silk, system (four) material __ 10,000 type will engrave area _ to π: f most through holes and at the same time on the bottom Corresponding to each soap: = ΐί! between the two sides of each of the through-holes on the top surface of the cover, two (four) 炫 a splicing layer, which can be closely connected with the metal at each through hole At the periphery of each space: 厶 4 adhesive layer 'which can be attached to the substrate and the cover The molten metal of the joint is melted and adhered; and the S-stone wafer is used as the substrate, and the top surface and the bottom of the substrate are: a layer of oxidized hair is formed on the top surface of the substrate and bonded thereto. The lithography process is used to define a region of the molten material of the substrate and the metal between the substrates; the surface of the substrate having the majority of the microstructure is aligned with the surface having the majority of the cover; In the vacuum chamber, after vacuuming, the heat source of the radiant heat is applied to the vacuum chamber by a heater, so that the two metal=melting materials at the through-hole and the junction between the substrate and the cover are simultaneously melted. '俾 for sealing each of the through holes and for the intimate connection of the earth plate to the cover' to complete the bonding of the package structure and the 1307128 package. 4 7 • According to the patent level of the patent application, the wafer level is true.] The fusion layer at the periphery of each through hole is one or two (the metal layer; the adhesive layer at the periphery of each space 43: the metal made by the pound) Layer; adhesive layer on the top surface of the board _ borrowing #= metal layer made of jin. Manufactured for plating; according to the application of patent _ 3, the crystal @ grade vacuum seal, wherein the heater is installed in the vacuum device The internal structure is placed adjacent to the heater. ~ The application of the wafer-level true package described in Item 3 of the application The sealing structure has been placed thereon before being placed in the vacuum chamber. ', the wafer-level vacuum packaging method according to the third application of the patent application', wherein the molten material of the metal placed in each of the through holes is tied to The package structure is placed on the vacuum chamber and is placed thereon. The wafer level vacuum packaging method (1) according to claim 1, wherein the molten material of the metal at the through hole is One of tin balls, tin sheets and tin blocks; 'the melting of the metal at the junction of the substrate and the cover The material system produced a tin plating. According to the wafer-level vacuum packaging method (1) of claim 1, further comprising a cutting process for cutting and encapsulating the packaged structure along each of the spaces to complete the A single package of die. 1307128 1 0 · A wafer level vacuum packaging method (1), comprising the following steps: a package structure process, providing a substrate and a cover, wherein the substrate is provided with a micro structure on one side, and the cover can be covered The substrate is provided with one surface of the micro-structure, and the cover and the substrate respectively have a space between the microstructures for respectively accommodating the microstructures, and the cover is different from the cover One surface of the substrate is respectively provided with at least a uniform perforation at a position corresponding to each of the spaces, and is connected to each of the spaces; The bonding process is disposed at a junction of the substrate and the cover, and is provided with a molten metal material, and after the substrate is aligned with the cover, a heat source and a load are applied thereto to make the substrate and the substrate The molten material of the metal at the junction of the cover is melted to be bonded to the cover; the packaging process is respectively provided with a molten metal of metal at each of the through holes, and the bonded substrate is assembled Vacuuming the environment in which the cap is placed, continuously applying a heat source and a load to melt the molten metal of each of the through holes, and sealing the through holes, thereby completing the wafer The stage is vacuum encapsulated so that the microstructures in each of the spaces are in a vacuum state. 1 1 · According to the wafer level vacuum packaging method (1) described in claim 10, in the package structure process, a wafer-shaped substrate and a cover are provided, wherein the substrate and the cover are selected. One of the materials of germanium, glass and PCB, and the microstructure is one of the components of the photovoltaic device, the radio frequency component and the micro-electromechanical 20 1307128 A by one of the microelectromechanical technology and the semiconductor process. The wafer-level vacuum packaging method (1) according to claim 10, wherein the molten material of the metal at the through-hole is one of a solder ball and a tin block; the substrate and the cover The molten material of the metal at the junction is a tin made by electroplating. 13. The wafer level vacuum package method according to claim 10, wherein the method further comprises a cutting process for cutting and encapsulating the package structure along each of the spaces. Complete a single package of one-chip crystal. twenty one